WO2018182710A1 - Formation de motif de bord pour suppression de mode parasite de résonateur - Google Patents
Formation de motif de bord pour suppression de mode parasite de résonateur Download PDFInfo
- Publication number
- WO2018182710A1 WO2018182710A1 PCT/US2017/025489 US2017025489W WO2018182710A1 WO 2018182710 A1 WO2018182710 A1 WO 2018182710A1 US 2017025489 W US2017025489 W US 2017025489W WO 2018182710 A1 WO2018182710 A1 WO 2018182710A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- piezoelectric resonator
- spacers
- piezoelectric
- substrate
- resonator
- Prior art date
Links
- 238000000059 patterning Methods 0.000 title description 19
- 230000001629 suppression Effects 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000011800 void material Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 102
- 125000006850 spacer group Chemical group 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 21
- 238000004891 communication Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 15
- 230000006870 function Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000001413 cellular effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 238000003032 molecular docking Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Definitions
- the first surface of the piezoelectric resonator comprises a narrower width, and is closer to the substrate surface, than the second surface of the piezoelectric resonator. In some embodiments, the first surface of the piezoelectric resonator comprises a narrower width, and is further from the substrate surface, than the second surface of the piezoelectric resonator. In some embodiments, the piezoelectric resonator comprises aluminum nitride. In some embodiments, the piezoelectric resonator comprises alternating layers of discrete materials. In some embodiments, the piezoelectric resonator comprises symmetrical tapering steps.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
L'invention concerne un appareil qui comprend : un substrat, un résonateur piézoélectrique séparé d'une surface du substrat par une région de vide, une première électrode connectée à une première surface du résonateur piézoélectrique parallèle à la surface du substrat, et une deuxième électrode connectée à une deuxième surface du résonateur piézoélectrique parallèle à la surface du substrat. Les première et deuxième surfaces du résonateur piézoélectrique présentent des largeurs disparates et le résonateur piézoélectrique comprend une pluralité d'étapes coniques sensiblement orthogonales entre les première et deuxième surfaces. L'invention concerne également d'autres modes de réalisation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2017/025489 WO2018182710A1 (fr) | 2017-03-31 | 2017-03-31 | Formation de motif de bord pour suppression de mode parasite de résonateur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2017/025489 WO2018182710A1 (fr) | 2017-03-31 | 2017-03-31 | Formation de motif de bord pour suppression de mode parasite de résonateur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018182710A1 true WO2018182710A1 (fr) | 2018-10-04 |
Family
ID=63676758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2017/025489 WO2018182710A1 (fr) | 2017-03-31 | 2017-03-31 | Formation de motif de bord pour suppression de mode parasite de résonateur |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018182710A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030071539A1 (en) * | 2001-09-14 | 2003-04-17 | Yasuhiro Kuratani | Edge reflection type surface acoustic wave device and manufacturing method for the same |
| US20080179995A1 (en) * | 2005-11-04 | 2008-07-31 | Murata Manufacturing Co., Ltd. | Piezoelectric thin-film resonator |
| KR20140101804A (ko) * | 2011-11-15 | 2014-08-20 | 퀄컴 인코포레이티드 | 스퓨리어스-모드 억제 압전 공진기 설계 |
| US20160211827A1 (en) * | 2015-01-19 | 2016-07-21 | Seiko Epson Corporation | Resonator element, resonator, oscillator, electronic apparatus, and moving object |
| US9577603B2 (en) * | 2011-09-14 | 2017-02-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Solidly mounted acoustic resonator having multiple lateral features |
-
2017
- 2017-03-31 WO PCT/US2017/025489 patent/WO2018182710A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030071539A1 (en) * | 2001-09-14 | 2003-04-17 | Yasuhiro Kuratani | Edge reflection type surface acoustic wave device and manufacturing method for the same |
| US20080179995A1 (en) * | 2005-11-04 | 2008-07-31 | Murata Manufacturing Co., Ltd. | Piezoelectric thin-film resonator |
| US9577603B2 (en) * | 2011-09-14 | 2017-02-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Solidly mounted acoustic resonator having multiple lateral features |
| KR20140101804A (ko) * | 2011-11-15 | 2014-08-20 | 퀄컴 인코포레이티드 | 스퓨리어스-모드 억제 압전 공진기 설계 |
| US20160211827A1 (en) * | 2015-01-19 | 2016-07-21 | Seiko Epson Corporation | Resonator element, resonator, oscillator, electronic apparatus, and moving object |
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