WO2018181061A1 - Surface-treated copper foil and copper-clad laminate using same - Google Patents
Surface-treated copper foil and copper-clad laminate using same Download PDFInfo
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- WO2018181061A1 WO2018181061A1 PCT/JP2018/011885 JP2018011885W WO2018181061A1 WO 2018181061 A1 WO2018181061 A1 WO 2018181061A1 JP 2018011885 W JP2018011885 W JP 2018011885W WO 2018181061 A1 WO2018181061 A1 WO 2018181061A1
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- copper foil
- laser
- treated copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 154
- 239000011889 copper foil Substances 0.000 title claims description 139
- 238000000034 method Methods 0.000 claims description 37
- 239000011888 foil Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000011161 development Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 73
- 238000011282 treatment Methods 0.000 description 35
- 230000000052 comparative effect Effects 0.000 description 27
- 238000005530 etching Methods 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 238000007788 roughening Methods 0.000 description 22
- 238000007747 plating Methods 0.000 description 21
- 238000010521 absorption reaction Methods 0.000 description 20
- 238000000151 deposition Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000011701 zinc Substances 0.000 description 14
- 101001134276 Homo sapiens S-methyl-5'-thioadenosine phosphorylase Proteins 0.000 description 11
- 102100022050 Protein canopy homolog 2 Human genes 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 230000037303 wrinkles Effects 0.000 description 8
- 239000006087 Silane Coupling Agent Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- MNOILHPDHOHILI-UHFFFAOYSA-N Tetramethylthiourea Chemical compound CN(C)C(=S)N(C)C MNOILHPDHOHILI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- NLSFWPFWEPGCJJ-UHFFFAOYSA-N 2-methylprop-2-enoyloxysilicon Chemical compound CC(=C)C(=O)O[Si] NLSFWPFWEPGCJJ-UHFFFAOYSA-N 0.000 description 1
- DTOOTUYZFDDTBD-UHFFFAOYSA-N 3-chloropropylsilane Chemical compound [SiH3]CCCCl DTOOTUYZFDDTBD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- BQJTUDIVKSVBDU-UHFFFAOYSA-L copper;sulfuric acid;sulfate Chemical compound [Cu+2].OS(O)(=O)=O.[O-]S([O-])(=O)=O BQJTUDIVKSVBDU-UHFFFAOYSA-L 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- MOVRCMBPGBESLI-UHFFFAOYSA-N prop-2-enoyloxysilicon Chemical compound [Si]OC(=O)C=C MOVRCMBPGBESLI-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- -1 styryl silane Chemical compound 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- RZLVQBNCHSJZPX-UHFFFAOYSA-L zinc sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Zn+2].[O-]S([O-])(=O)=O RZLVQBNCHSJZPX-UHFFFAOYSA-L 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
Definitions
- the present invention relates to a surface-treated copper foil excellent in laser processability suitable for a printed wiring board having a high-density wiring circuit (fine pattern), and a copper-clad laminate using the same.
- a printed wiring board is manufactured by placing a thin copper foil for forming a surface circuit on the surface of an electrically insulating substrate made of glass epoxy resin or polyimide resin, and then heating and pressing to produce a copper-clad laminate. Next, through-hole drilling and through-hole plating are sequentially performed on the copper-clad laminate, and then the copper foil of the copper-clad laminate is etched to provide a desired line width and a desired line pitch. A wiring pattern is formed. Finally, in order to expose the solder resist coating, exposure, through-hole plating, or plating of the connection part of the electronic component, removal of the uncured solder resist or other finishing treatment is performed with caustic soda.
- the copper foil used at this time is generally an electrolytic copper foil obtained by peeling the copper foil 101 deposited on the drum 102 using the electrolytic deposition apparatus shown in FIG.
- the field deposition start surface (shiny surface, hereinafter referred to as “S surface”) peeled off from the drum 102 is relatively smooth, and the opposite surface of the electrolytic deposition end surface (matt surface; hereinafter referred to as “M surface”) is general.
- S surface field deposition start surface
- M surface opposite surface of the electrolytic deposition end surface
- the adhesion to the substrate resin is improved by roughening the roughening treatment on the M surface.
- a printed wiring board particularly a build-up wiring board, is manufactured by thermocompression bonding the insulating resin layer side to a substrate (insulating substrate).
- the wiring pattern is also required to have a high density, and a wiring pattern having a fine line width and a pitch between lines, so-called fine wiring.
- a printed wiring board having a pattern has been demanded. For example, multilayer boards used for servers, routers, communication base stations, in-vehicle boards, etc. and smartphone multilayer boards require printed wiring boards with high-density ultrafine wiring with a line width and line spacing of around 15 ⁇ m. ing.
- MSAP method semi-additive method
- an ultrathin copper foil is formed as a power feeding layer on a resin layer, and then pattern copper plating is applied on the ultrathin copper foil. Next, the ultrathin copper foil is removed by flash etching to form a desired wiring.
- a thin copper foil with a carrier is used in the MSAP method.
- a release layer and a thin copper foil are formed in this order on one side of a copper foil (carrier copper foil) as a carrier, and the surface of the thin copper foil is a roughened surface.
- the carrier copper foil is peeled and removed, and the bonding side of the thin copper foil with the carrier copper foil is exposed, and there It is used in the form of forming a predetermined wiring pattern.
- a hole called a via is opened for interlayer connection in the build-up wiring board, and this hole is often formed by laser light irradiation.
- a method called direct laser processing is used in which holes are formed in the copper foil and the resin at a stretch by directly irradiating the copper foil with laser light.
- Patent Document 1 proposes a copper foil having good laser processability by having a laser absorption layer made of chromium, cobalt, nickel, iron or the like on the laser processed surface in order to improve the laser processability of the S surface. Has been.
- the thin copper foil in the carrier-attached copper foil is produced by an ordinary copper sulfate bath plating bath, and there is a problem that pinholes frequently occur.
- Patent Document 2 a copper foil in which pinholes are suppressed by uniformly forming a nickel and zinc chromate layer as an intermediate layer is proposed.
- the intermediate layer peeling layer
- the intermediate layer to which the laser hits after peeling the carrier foil is smooth and hardly absorbs laser light, and the laser processability is poor.
- it since it is a copper foil with a carrier, there is a problem that it takes time to peel off the copper foil with a carrier and the handling property is poor.
- Patent Document 3 proposes a copper foil with a carrier that has improved laser processability and etching properties by suppressing variations in roughness on the intermediate layer side of the thin copper foil.
- the thin copper foil in the carrier-attached copper foil is produced by an ordinary copper sulfate bath plating bath, and there is a problem that pinholes frequently occur.
- JP 2013-75443 A International Publication No. 2015/030256 JP 2014-208480 A
- the MSAP method uses a copper foil with a carrier, but this copper foil with a carrier has the following problems. ⁇ Many pinholes are decreasing the manufacturing yield. -The intermediate layer that the laser hits after peeling the carrier foil is smooth and difficult to absorb the laser beam, and the laser processability is poor. Therefore, a browning process (etching roughening process) is required as a pre-process for laser processing. ⁇ The manufacturing process has been increased due to the labor of the carrier foil peeling process. Because of these problems, new materials that can replace the copper foil with carrier have been demanded. For these problems, the present invention has a high tensile strength after normal heating and heating, and it can be applied to the MSAP method without occurrence of wrinkles even with a thin foil without a carrier foil. Laser workability (direct laser processing) Another object of the present invention is to provide a surface-treated copper foil that is excellent in etching property and thin foil handling property and suitable for high-density wiring circuits with few pinholes.
- the inventors of the present invention have made extensive studies and found that a roughened surface having an “Sdr of 25 to 120%” is suitable for direct laser processing.
- the surface-treated copper foil of the present invention is a surface-treated copper foil having a tensile strength of 400 to 700 MPa in a normal state, a tensile strength measured at room temperature after heating at 220 ° C. for 2 hours, and a foil thickness of 7 ⁇ m or less.
- the development area ratio (Sdr) of at least one surface is 25 to 120%, and the number of pinholes with a diameter of 30 ⁇ m or more is 20 pieces / m 2 or less. It has been found that it is excellent in direct laser processing) and thin foil handling properties, and has few pinholes and is suitable for high-density wiring circuits. Based on this finding, the present invention has been completed.
- the tensile strength in the normal state can be measured by IPC-TM-650 at room temperature.
- the tensile strength after heating can be measured in the same manner as the normal tensile strength at room temperature after heating the surface-treated copper foil to 220 ° C. and holding it for 2 hours, followed by natural cooling to room temperature.
- the hand rigging and etching properties are good.
- the tensile strength in a normal state is less than 400 MPa, wrinkles are generated when a thin foil sheet product is conveyed, resulting in poor handling properties.
- the tensile strength measured at room temperature after heating is 300 MPa or more, the crystal grains are fine and the etching property is good even after heating in the substrate lamination step.
- the tensile strength after heating is 300 MPa or less, the crystal grains become large and are difficult to dissolve by etching.
- the foil thickness of the surface-treated copper foil is 7 ⁇ m or less, and may be 6 ⁇ m or less.
- the foil thickness of the surface-treated copper foil exceeds 7 ⁇ m, the degree of opening by a low energy laser tends to be deteriorated.
- the foil thickness of the surface-treated copper foil is 7 ⁇ m or less, particularly 6 ⁇ m or less, laser workability, particularly workability in laser irradiation with a low energy of about 8 W tends to be improved.
- the foil thickness is a copper foil produced by electrolytic deposition, if necessary, formation of a laser absorption layer, formation of a roughening treatment layer, formation of a Ni layer, formation of a zinc layer, chromate treatment, It means the film thickness before the laser processing after the surface treatment such as the formation of the silane coupling device.
- the foil thickness can be measured as a mass thickness by an electronic balance.
- the development area ratio (Sdr) of at least one surface is 25 to 120%, direct laser workability when this surface and the laser irradiation surface are used can be improved.
- Developed area ratio means the ratio of the surface area added by the surface properties based on the ideal surface having the size of the measurement region, and is defined by the following equation.
- x and y in the formula are plane coordinates
- z is a coordinate in the height direction
- z (x, y) indicates the coordinates of a certain point, and by differentiating this, the slope at that coordinate point is obtained.
- A is the plane area of the measurement region.
- the development area ratio (Sdr) can be obtained by measuring and evaluating the unevenness of the copper foil surface with a three-dimensional white interference microscope, scanning electron microscope (SEM), electron beam three-dimensional roughness analyzer, etc. it can. In general, Sdr tends to increase as the spatial complexity of the surface texture increases, regardless of changes in the surface roughness Sa.
- x and y in the formula are plane coordinates, and z is a coordinate in the height direction.
- P is the absorbed laser power [J / s]
- K is the thermal conductivity [J / cm ⁇ s ⁇ K]
- ⁇ is the density [g / cm3]
- C is the specific heat [J / g ⁇ K]
- t is the laser irradiation time [s]
- a is the beam radius [cm].
- the temperature rises with increasing time but saturates for a certain time. The temperature at that time is as follows.
- the temperature increases as the energy of the laser beam absorbed on the copper foil surface increases as shown above. This is because atomic vibration is amplified and converted into heat by the energy of the absorbed laser beam. In direct laser processing, this thermal energy is used to melt and drill the copper foil at the laser irradiated location. In order to increase the accuracy and efficiency of direct laser processing, it is necessary to reduce the reflectance on the copper foil surface or increase the absorption rate, as can be seen from the above formula.
- the absorption rate of the copper surface after peeling the carrier foil is low, it is compatible with direct laser processing by roughening the surface by browning and increasing the absorption rate, but the browning process is laborious Therefore, it is a problem from the viewpoint of manufacturing cost. Therefore, as a result of intensive research, by setting the development area ratio (Sdr) of at least one surface of the copper foil to 25 to 120%, the direct laser processability when this surface is used as the laser irradiation surface can be improved. I found out that I can do it. When the surface is made such that the Sdr is 25 to 120%, a highly complex uneven shape is formed at 1 ⁇ m or less.
- the copper foil when the copper foil is made thin, it is known that the performance of the circuit board is deteriorated when a pinhole is generated.
- the copper having a pinhole of 30 ⁇ m or more in diameter is 20 pieces / m 2 or less. A foil is obtained, and the performance degradation of the circuit board can be suppressed.
- the number of pinholes is determined by cutting the copper foil into an appropriate size, for example, 200 mm ⁇ 200 mm, marking the pinholes by, for example, a light transmission method, checking the diameter with an optical microscope, and counting holes of 30 ⁇ m or more. Unit area based on the number of the resulting pinhole (m 2) Number of pinholes per an (pieces / m @ 2) can be calculated.
- the present invention it is possible to provide a copper foil excellent in etching property, laser processability, thin foil handling property, and pinhole resistance.
- a surface-treated copper foil that can be applied to the MSAP method without using a carrier copper foil.
- the surface-treated copper foil of the present invention has a development area ratio (Sdr) of 25 to 120%, but if the development area ratio (Sdr) is 30 to 80%, the laser processability tends to be further improved. Even when the thickness of the surface-treated copper foil is 7 ⁇ m or less, particularly 6 ⁇ m or less, the developed area ratio (Sdr) is 30 to 80%, and the number of pinholes having a diameter of 30 ⁇ m or more is 10 / m 2 or less. It is preferable. When the number of pinholes having a diameter of 30 ⁇ m or more exceeds 10 / m 2 , the performance when applied to a circuit board tends to be lowered.
- Sdr development area ratio
- the surface-treated copper foil of the present invention preferably has a laser-processed surface of Yxy color system, Y of 25.0 to 65.5%, x of 0.30 to 0.48, and y of 0.28 to 0.41.
- the processed surface is Yxy color system, Y is 25.0 to 65.5%, x is 0.30 to 0.48, and y is 0.28 to When it is in the range of 0.41, the laser absorptivity is further improved and the laser processability is very good.
- the Yxy color system can be measured using a device such as a color meter in accordance with JIS Z 8722, for example.
- the copper foil used in the MSAP method has an M-surface that is affixed to the resin base, and the laser-processed surface is smooth and not sufficiently laser-absorbing. A process (etching roughening process) is performed. In the present invention, it is possible to improve laser processability without performing browning.
- the copper foil in the present invention is, for example, an insoluble anode made of titanium coated with a platinum group element or its oxide element using a sulfuric acid-copper sulfate aqueous solution as an electrolytic solution, and opposed to the anode.
- the electrolytic solution is supplied between the titanium cathode drum and the cathode drum, and copper is deposited on the surface of the cathode drum by applying a direct current between both electrodes while rotating the cathode drum at a constant speed.
- the produced copper is peeled off from the surface of the cathode drum and is continuously wound up.
- the electrolytic copper foil so that the copper deposition potential on the surface of the cathode drum is uniform and uniform.
- a method of forming a foil in a state where an oxide film does not exist on the surface of the titanium drum can be mentioned.
- a cathode reduction process may be employed. As shown in FIG. 1, in a conventional electrolytic copper foil manufacturing apparatus, an electrolytic drum 102 serving as a cathode is polished by a buff 103 to remove an oxide film generated on the drum surface.
- the cathode reduction step for example, instead of the buff 103 of the electrolytic copper foil deposition apparatus of FIG.
- the electrolytic solution (dilute sulfuric acid) of the cathode reduction apparatus 105 is used as shown in FIG. ) 106 to remove the oxide film.
- the electrolytic solution (dilute sulfuric acid) of the cathode reduction apparatus 105 is used as shown in FIG. ) 106 to remove the oxide film.
- the film thickness of the titanium oxide film on the titanium drum surface is uneven, so that the copper deposition potential varies within the drum surface. Hall was easy to occur.
- Pinholes can be reduced by employing a cathode reduction process and increasing the cathode reduction current density. This is because it is considered that the reduction of the titanium oxide further proceeds due to the increase in the cathode reduction current density, the distribution of the copper deposition potential on the surface of the titanium drum is eliminated, and pinholes can be suppressed.
- ethylenethiourea polyethylene glycol, tetramethylthiourea, polyacrylamide or the like may be added as an additive to the electrolytic solution.
- the tensile strength in the normal state and the tensile strength after heating can be increased.
- the handling property and the etching property are good.
- the tensile strength in the normal state is less than 400 MPa, the handleability is poor, and when it is more than 700 MPa, the foil is likely to break and is unsuitable for production.
- the crystal grains are fine and the etching property is good even after heating by laminating the substrates.
- the tensile strength after heating is 300 MPa or less, the crystal grains become large and are difficult to dissolve by etching, so that the etching property is deteriorated.
- the surface on which the laser absorption layer is formed may be the deposition start surface (S surface) or the deposition end surface (M surface) in the electrolytic copper foil manufacturing process.
- the bonding surface (roughening surface) with the resin substrate is often the M surface and the laser processed surface is the S surface.
- the S surface is roughened with the resin substrate.
- the processed surface may be a M-plane. That is, the roughening process layer may be formed in the electrolytic deposition start surface (S surface) in the manufacture process of electrolytic copper foil.
- the present invention by providing an appropriate surface area so that the developed area ratio Sdr of the M surface or S surface, which is the laser processing surface, is 25 to 120%, direct laser processing can be performed without browning. I found. Moreover, an etching factor can also be improved by forming a roughening process layer in the electrolytic deposition start surface in the manufacture process of electrolytic copper foil.
- the plating bath composition for forming the laser absorption layer copper sulfate pentahydrate, sulfuric acid, hydroxyethylene cellulose (HEC), polyethylene glycol (PEG), thiourea, and the like can be added.
- HEC hydroxyethylene cellulose
- PEG polyethylene glycol
- thiourea thiourea
- the additive acting in accordance with the corresponding two-stage deposition potential changes, and a complex uneven shape can be formed.
- a deposition surface with excellent laser absorption can be obtained.
- a stepped pulse current where one step current value (Ion1)> two step current value (Ion2), one step current value (Ion1) or one step time (ton1) is increased.
- the S-dr of the M-plane tends to increase.
- Laser workability is improved when Sdr is in the range of 25-120%.
- a foil has a fine uneven shape of about 2 ⁇ m or less on the surface of the surface-treated copper foil, and the laser light absorbability is increased. If the Sdr is less than 25%, the laser beam is not absorbed well and the laser processability is poor. If Sdr is greater than 120%, the absorption rate of light at the wavelength of the CO2 laser is lowered and laser processability is lowered. Further, when the time interval (toff) of the pulse current is increased, Y decreases in the Yxy color system. When Sdr is in the range of 25 to 120% and Y is in the range of 15.0 to 85.0% in the Yxy color system, the laser processability is good.
- Y is less than 15% or greater than 85%, the laser processability tends to decrease.
- the laser numerical aperture tends to increase, and as the Y value decreases, the laser numerical aperture tends to increase.
- Laser processability is particularly good when the Sdr is in the range of 25 to 120%, Y is 25.0 to 65.5%, x is 0.30 to 0.48%, and y is 0.28 to 0.41% in the Yxy color system. .
- a roughened layer having a fine uneven surface is formed by electrodeposition of fine copper particles.
- the roughening layer is formed by electroplating, but it is preferable to add a chelating agent to the plating bath, and the concentration of the chelating agent is suitably 0.1 to 5 g / L.
- chelating agents include DL-malic acid, sodium EDTA solution, sodium gluconate, and diethylenetriaminepentaacetic acid pentasodium (DTPA).
- Copper sulfate, sulfuric acid and molybdenum may be added to the electrolytic bath. Etching properties can be improved by adding molybdenum.
- the copper concentration is 13 to 72 g / L
- the sulfuric acid concentration is 26 to 133 g / L
- the liquid temperature is 18 to 67 ° C.
- the current density is 3 to 67 A / dm 2
- the treatment time is 1 second to 1 minute 55 seconds.
- nickel layer ⁇ Formation of nickel layer, zinc layer, chromate treatment layer>
- This zinc layer increases the bonding strength with the substrate by preventing deterioration of the substrate resin and surface oxidation of the thin copper foil due to the reaction with the thin copper foil substrate resin when the thin copper foil and the resin substrate are thermocompression bonded.
- the nickel layer is zinc for preventing the zinc of the zinc layer from thermally diffusing to the copper foil (electrolytic copper plating layer) side at the time of thermocompression bonding to the resin substrate, so that the above functions of the zinc layer are effectively exhibited.
- these nickel layers and zinc layers can be formed by applying a known electrolytic plating method or electroless plating method.
- the nickel layer may be formed of pure nickel or a phosphorus-containing nickel alloy.
- chromate treatment it is preferable to further perform chromate treatment on the surface of the zinc layer because an antioxidant layer is formed on the surface.
- a publicly known method may be followed, for example, a method disclosed in JP-A-60-86894.
- Silane coupling agents include vinyl silane, epoxy silane, styryl silane, methacryloxy silane, acryloxy silane, amino silane, ureido silane, chloropropyl silane, mercapto silane, sulfide silane, isocyanate silane Examples include silane. These silane coupling agents are usually made into 0.001 to 5% aqueous solution, applied to the surface of the copper foil, and then dried by heating as it is. In addition, it can replace with a silane coupling agent, and the same effect can be acquired even if it uses coupling agents, such as a titanate type
- coupling agents such as a titanate type
- a copper foil surface (roughening layer surface) of a thin copper foil is placed on the surface of an electrically insulating substrate made of glass epoxy resin or polyimide resin, and heated and heated.
- a copper-clad laminate with or without a carrier is produced by pressing. Since the surface-treated copper foil of the present invention has a high tensile strength after normal and heating, it can sufficiently cope even without a carrier.
- the surface of the copper-clad laminate is irradiated with a CO2 gas laser to make a hole. That is, a CO2 gas laser is irradiated from the surface of the surface-treated copper foil on which the laser absorption layer is formed, to perform a drilling process that penetrates the surface-treated copper foil and the resin substrate.
- Example 22 a laser absorption layer was formed by alternating current, and in Example 23, a laser absorption layer was formed by MEC-etch bond CZ-8000 treatment.
- Ion1 represents the first stage pulse current density
- Ion2 represents the second stage pulse current density
- ton1 represents the first stage pulse current application time
- ton2 represents the pulse current application time at the second stage
- toff represents the time when the current between the pulse current at the second stage and the pulse current at the first stage is zero.
- the surface where the laser absorbing layer is formed is the surface opposite to the roughened surface shown in Table 4. In Examples 1 to 19, 22 to 23 and Comparative Examples 4 and 6 to 8, the laser absorbing layer is formed on the M surface.
- Ni-containing foundation layer For all Examples 1 to 23 and Comparative Examples 1 to 9, after the formation of the roughened layer, electrolysis was performed on the roughened layer under the Ni plating conditions shown below. By plating, a base layer (Ni adhesion amount 0.06 mg / dm 2 ) was formed.
- Ni plating conditions Nickel sulfate: 5.0 g / L as nickel metal Ammonium persulfate 40.0 g / L Boric acid 28.5g / L Current density 1.5 A / dm 2 pH 3.8 Temperature 28.5 ° C Time 1 second-2 minutes
- the shape analysis uses a high resolution CCD camera with a VSI measurement method, the light source is white light, the measurement magnification is 10 times, the measurement range is 477 ⁇ m ⁇ 357.8 ⁇ m, the lateral sampling is 0.38 ⁇ m, the speed is 1, the backscan is 5 ⁇ m, and the length is The processing was performed under the conditions of 5 ⁇ m and Threshold of 5%, and the data processing was performed after the filtering of TermsRemoval. The results are shown in Table 4.
- Yxy color system In the Yxy color system of the copper foils of all Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5), Y, x, and z are color meters SM-T45 (Suga Test Machine) Co., Ltd.), 45 ° illumination 0 ° light reception, light source C light 2 degree field of view (halogen lamp) can be measured. The results are shown in Table 4.
- etching factor (Ef) is a value expressed by the following equation, where H is the thickness of the surface-treated copper foil, B is the bottom width of the formed wiring pattern, and T is the top width of the formed wiring pattern.
- Ef 2H / (BT)
- the etching factor is small, the verticality of the side wall in the wiring pattern is lost, and there is a risk of disconnection in the case of a fine wiring pattern with a narrow line width.
- the bottom width and the top width were measured with a microscope and the etching factor was calculated with respect to the pattern when the just etch (resist end portion and bottom of the copper foil pattern were aligned) position. The results are shown in Table 4.
- the tensile strength is 400 to 700 MPa
- the tensile strength after heating at 220 ° C. for 2 hours is 300 MPa or more
- the foil thickness is 7 ⁇ m or less
- the laser irradiation surface Development area ratio (Sdr) of 25 to 120%, as shown in the evaluation results, the number of pinholes is 20 or less, Ef is 2.0 or more, laser numerical aperture at 8W is 90 or more, wrinkles It can be seen that the number of defects is 3 or less, there are few pinholes, laser workability is excellent, and handling properties are also excellent.
- Comparative Examples 1 to 9 have a tensile strength of 400 to 700 MPa and a tensile strength of 300 MPa or more after heating at 220 ° C. for 2 hours, but Comparative Examples 2, 3, 5 to 7 and 9 Since the development area ratio (Sdr) of the laser irradiation surface does not satisfy 25 to 120%, the laser numerical aperture at 8 W is all less than 90, indicating that the laser apertureability is not good. Further, in Comparative Examples 1 and 4, the occurrence of pinholes exceeds 20 depending on the manufacturing conditions of the surface-treated copper foil, and it can be seen that Comparative Example 8 has poor foil opening because the foil thickness is 9 ⁇ m.
- the graph of FIG. 3 shows the relationship between the numerical aperture and the number of pinholes when the irradiation energy is 8 W for the surface-treated copper foils of Examples 1 to 21 and Comparative Examples 1 to 9. It was.
- the surface-treated copper foil of the example has a large number of apertures and less pinholes and is excellent in laser processability, whereas the surface-treated copper foil of the comparative example has an opening. It can be seen that the number is small or the number of pinholes is large and the laser processability is poor.
- the relationship between the tensile strength and the number of pinholes in the normal state was shown in the graph of FIG. 3 for the surface-treated copper foils of Examples 1 to 21 and Comparative Examples 1 to 9.
- the surface-treated copper foil of the example has a large number of apertures and less pinholes and is excellent in laser processability, whereas the surface-treated copper foil of the comparative example has an opening. It can be seen that the number is small or the number of pinholes is large and the laser processability is poor.
- the present invention it is possible to provide a high surface-treated copper foil having high tensile strength, fine line spacing and line width, excellent etching properties, laser processability and thin foil handling properties, and few pinholes. Yes, it has high industrial applicability.
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Abstract
Description
ビルドアップ配線基板における層間接続のために、ビアと呼ばれる孔が開けられるが、この孔開けはレーザー光の照射により行われることが多い。そして、MSAP工法においては、銅箔に直接レーザー光を照射することにより、銅箔と樹脂に一気に孔を開けるダイレクトレーザー加工と呼ばれる方法が採られる。 Usually, a thin copper foil with a carrier is used in the MSAP method. In the thin copper foil with a carrier, a release layer and a thin copper foil are formed in this order on one side of a copper foil (carrier copper foil) as a carrier, and the surface of the thin copper foil is a roughened surface. Then, after superposing the roughened surface on the resin substrate, the whole is thermocompression bonded, then the carrier copper foil is peeled and removed, and the bonding side of the thin copper foil with the carrier copper foil is exposed, and there It is used in the form of forming a predetermined wiring pattern.
A hole called a via is opened for interlayer connection in the build-up wiring board, and this hole is often formed by laser light irradiation. In the MSAP method, a method called direct laser processing is used in which holes are formed in the copper foil and the resin at a stretch by directly irradiating the copper foil with laser light.
・ピンホールが多く製造の歩留りを低下させている。
・キャリア箔を剥離したあとにレーザーが当たる中間層は平滑でレーザーの光を吸収し難く、レーザー加工性が悪い。そのため、レーザー加工の前処理としてブラウン処理(エッチング粗化処理)が必要とされる。
・キャリア箔の剥離工程に手間がかかり製造コストを増加させている。
このような問題があるため、キャリア付き銅箔に代わる新しい材料が要望されてきている。それらの課題に対して本発明は、常態及び加熱後の引張強度が高く、キャリア箔なしの薄箔でも皺の発生がなくMSAP工法への適用が可能であり、レーザー加工性(ダイレクトレーザー加工)、エッチング性及び薄箔ハンドリング性に優れ、かつピンホールの少ない高密度配線回路に適した表面処理銅箔を提供することを目的とする。 The MSAP method uses a copper foil with a carrier, but this copper foil with a carrier has the following problems.
・ Many pinholes are decreasing the manufacturing yield.
-The intermediate layer that the laser hits after peeling the carrier foil is smooth and difficult to absorb the laser beam, and the laser processability is poor. Therefore, a browning process (etching roughening process) is required as a pre-process for laser processing.
・ The manufacturing process has been increased due to the labor of the carrier foil peeling process.
Because of these problems, new materials that can replace the copper foil with carrier have been demanded. For these problems, the present invention has a high tensile strength after normal heating and heating, and it can be applied to the MSAP method without occurrence of wrinkles even with a thin foil without a carrier foil. Laser workability (direct laser processing) Another object of the present invention is to provide a surface-treated copper foil that is excellent in etching property and thin foil handling property and suitable for high-density wiring circuits with few pinholes.
展開面積比(Sdr)は、3次元白色干渉型顕微鏡、走査型電子顕微鏡(SEM)、電子線3次元粗さ解析装置などにより、銅箔表面の凹凸差を測定、評価して、求めることができる。一般に、Sdrは表面粗さSaの変化に関わらず、表面性状の空間的な複雑性が増すと大きくなる傾向にある。 Here, x and y in the formula are plane coordinates, and z is a coordinate in the height direction. z (x, y) indicates the coordinates of a certain point, and by differentiating this, the slope at that coordinate point is obtained. A is the plane area of the measurement region.
The development area ratio (Sdr) can be obtained by measuring and evaluating the unevenness of the copper foil surface with a three-dimensional white interference microscope, scanning electron microscope (SEM), electron beam three-dimensional roughness analyzer, etc. it can. In general, Sdr tends to increase as the spatial complexity of the surface texture increases, regardless of changes in the surface roughness Sa.
r+μ+τ=1
ダイレクトレーザー加工では銅箔に対しτ=0となるようなレーザー光を選択しておりCO2ガスレーザーなどが一般的であり,上記式はr+μ=1となる.またレーザー光の強度が一様な分布で吸収された場合、ビーム半径をaとするとビーム中心軸(Z軸)上での温度分布は次式で示される。 Here, the principle of direct laser processing will be described. When the reflectance on the copper foil surface is r, the absorptance is μ, and the transmittance is τ, the following equation holds.
r + μ + τ = 1
In direct laser processing, a laser beam such that τ = 0 is selected for copper foil, and CO2 gas laser is common, and the above equation is r + μ = 1. When the intensity of the laser beam is absorbed in a uniform distribution, the temperature distribution on the beam center axis (Z axis) is expressed by the following equation, where the beam radius is a.
温度は時間の増加と共に上昇するが一定時間で飽和するが、その際の温度は次式の通りである。 Here, x and y in the formula are plane coordinates, and z is a coordinate in the height direction. P is the absorbed laser power [J / s], x is the thermal diffusivity = K / ρ · C [cm 2 / S], and K is the thermal conductivity [J / cm · s · K], ρ is the density [g / cm3], C is the specific heat [J / g · K], t is the laser irradiation time [s], and a is the beam radius [cm].
The temperature rises with increasing time but saturates for a certain time. The temperature at that time is as follows.
(1)電解銅箔の製造
本発明における銅箔は、例えば、硫酸-硫酸銅水溶液を電解液とし、白金族元素又はその酸化物元素で被覆したチタンからなる不溶性アノードと、該アノードに対向させて設けられたチタン製カソードドラムとの間に該電解液を供給し、カソードドラムを一定速度で回転させながら、両極間に直流電流を通電することによりカソードドラム表面上に銅を析出させ、析出した銅をカソードドラム表面から引き剥がし、連続的に巻き取る方法により製造される。 Below, the conditions and method for manufacturing the surface-treated copper foil of this invention are demonstrated.
(1) Production of electrolytic copper foil The copper foil in the present invention is, for example, an insoluble anode made of titanium coated with a platinum group element or its oxide element using a sulfuric acid-copper sulfate aqueous solution as an electrolytic solution, and opposed to the anode. The electrolytic solution is supplied between the titanium cathode drum and the cathode drum, and copper is deposited on the surface of the cathode drum by applying a direct current between both electrodes while rotating the cathode drum at a constant speed. The produced copper is peeled off from the surface of the cathode drum and is continuously wound up.
<レーザー吸収層形成処理>
次に、上で得られた銅箔に対し、レーザー吸収層を形成するための表面処理を行う。本発明では、パルス電流により銅箔の一方の面に凹凸形状のめっき層を形成する。この面が、銅箔を用いてMSAP工法により回路を作製する際のレーザー加工面となる。レーザー吸収層の形成面は、電解銅箔製造工程における析出開始面(S面)であっても析出終了面(M面)でもよい。一般的には、樹脂基板との接着面(粗化処理面)をM面としレーザー加工面をS面とすることが多いが、本発明においては、樹脂基板との接着面をS面が粗化処理された面とし、レーザー加工面をM面としてもよい。すなわち、粗化処理層が電解銅箔の製造過程における電解析出開始面(S面)に形成されていてもよい。 (2) Copper foil surface treatment <Laser absorption layer forming treatment>
Next, surface treatment for forming a laser absorption layer is performed on the copper foil obtained above. In the present invention, an uneven plating layer is formed on one surface of the copper foil by a pulse current. This surface becomes a laser processed surface when a circuit is produced by the MSAP method using copper foil. The surface on which the laser absorption layer is formed may be the deposition start surface (S surface) or the deposition end surface (M surface) in the electrolytic copper foil manufacturing process. In general, the bonding surface (roughening surface) with the resin substrate is often the M surface and the laser processed surface is the S surface. However, in the present invention, the S surface is roughened with the resin substrate. The processed surface may be a M-plane. That is, the roughening process layer may be formed in the electrolytic deposition start surface (S surface) in the manufacture process of electrolytic copper foil.
銅箔のレーザー加工面と反対側の面上に、微細な銅粒子の電析により、微細凹凸表面をもつ粗化処理層を形成する。粗化処理層は電気メッキにより形成するが、メッキ浴にキレート剤を添加することが好ましく、キレート剤の濃度は0.1~5g/Lが適当である。キレート剤としてはDL-りんご酸、EDTAナトリウム溶液、グルコン酸ナトリウム、ジエチレントリアミン五酢酸五ナトリウム(DTPA)などのキレート剤などが挙げられる。 <Formation of roughening treatment layer>
On the surface opposite to the laser processed surface of the copper foil, a roughened layer having a fine uneven surface is formed by electrodeposition of fine copper particles. The roughening layer is formed by electroplating, but it is preferable to add a chelating agent to the plating bath, and the concentration of the chelating agent is suitably 0.1 to 5 g / L. Examples of chelating agents include DL-malic acid, sodium EDTA solution, sodium gluconate, and diethylenetriaminepentaacetic acid pentasodium (DTPA).
本発明では、粗化処理面の上に更にニッケル層、亜鉛層をこの順で形成することが好ましい。この亜鉛層は、薄銅箔と樹脂基板を熱圧着したときに、薄銅箔基板樹脂との反応による該基板樹脂の劣化や薄銅箔の表面酸化を防止して基板との接合強度を高める働きをする。またニッケル層は、樹脂基板への熱圧着時に該亜鉛層の亜鉛が銅箔(電解銅めっき層)側へ熱拡散することを防止し、もって亜鉛層の上記機能を有効に発揮させるための亜鉛層の下地層としての働きをする。
なお、これらのニッケル層や亜鉛層は、公知の電解めっき法や無電解めっき法を適用して形成することができる。また、該ニッケル層は純ニッケルで形成してもよいし、含リンニッケル合金で形成してもよい。 <Formation of nickel layer, zinc layer, chromate treatment layer>
In the present invention, it is preferable to further form a nickel layer and a zinc layer in this order on the roughened surface. This zinc layer increases the bonding strength with the substrate by preventing deterioration of the substrate resin and surface oxidation of the thin copper foil due to the reaction with the thin copper foil substrate resin when the thin copper foil and the resin substrate are thermocompression bonded. Work. In addition, the nickel layer is zinc for preventing the zinc of the zinc layer from thermally diffusing to the copper foil (electrolytic copper plating layer) side at the time of thermocompression bonding to the resin substrate, so that the above functions of the zinc layer are effectively exhibited. Serves as an underlayer for the layer.
In addition, these nickel layers and zinc layers can be formed by applying a known electrolytic plating method or electroless plating method. The nickel layer may be formed of pure nickel or a phosphorus-containing nickel alloy.
また、前記のクロメート処理した表面に対し更にシランカップリング剤を用いた表面処理を行うと、銅箔表面(基板との接合側の表面)には接着剤との親和力の強い官能基が付与されるので、該銅箔と基板との接合強度は一層向上し、銅箔の防錆性,吸湿耐熱性を更に向上するので好適である。 <Silane treatment>
Further, when a surface treatment using a silane coupling agent is further performed on the chromate-treated surface, a functional group having a strong affinity for the adhesive is imparted to the copper foil surface (the surface on the side bonded to the substrate). Therefore, the bonding strength between the copper foil and the substrate is further improved, and the rust prevention and moisture absorption heat resistance of the copper foil are further improved.
最初にガラスエポキシ樹脂やポリイミド樹脂などから成る電気絶縁性の基板の表面に、薄銅箔の銅箔面(粗化処理層面)を重ねて置き、加熱・加圧してキャリア付きまたはキャリア無しの銅張積層板を製造する。本発明の表面処理銅箔は常態および加熱後の引張強度が高いためキャリア無しでも十分対応することができる。次いで、銅張積層板の表面処理銅箔表面にCO2ガスレーザーを照射して穴あけを行う。すなわち、表面処理銅箔のレーザー吸収層が形成されている面からCO2ガスレーザーを照射して、表面処理銅箔及び樹脂基板を貫通する穴あけ加工を行う。 (3) Manufacture of copper-clad laminate First, a copper foil surface (roughening layer surface) of a thin copper foil is placed on the surface of an electrically insulating substrate made of glass epoxy resin or polyimide resin, and heated and heated. A copper-clad laminate with or without a carrier is produced by pressing. Since the surface-treated copper foil of the present invention has a high tensile strength after normal and heating, it can sufficiently cope even without a carrier. Next, the surface of the copper-clad laminate is irradiated with a CO2 gas laser to make a hole. That is, a CO2 gas laser is irradiated from the surface of the surface-treated copper foil on which the laser absorption layer is formed, to perform a drilling process that penetrates the surface-treated copper foil and the resin substrate.
(1)銅箔の製造とレーザー吸収層の形成
表1に示される電解液、電流密度、浴温のカソード還元工程と表2に示される電解条件による電解析出工程により実施例1~21及び比較例1~9の電解銅箔を製造した。これらの電解銅箔をそれぞれ表3に示す組成を有するめっき浴、処理面及び電解条件(パルス電圧のパルス幅、電流密度、時間、浴温)において、電解めっき処理によりレーザー吸収層を形成した。また実施例22では交流電流によりレーザー吸収層を形成し、実施例23ではメックエッチボンドCZ-8000処理でレーザー吸収層を形成した。なお、表3中の電解条件において、Ion1は、1段階目のパルス電流密度を表し、Ion2は、2段階目のパルス電流密度を表し、ton1は、1段階目のパルス電流印加時間を表し、ton2は、2段階目のパルス電流印加時間を表し、toffは、2段階のパルス電流と1段階目のパルス電流の間の電流を0とする時間を表している。また、レーザー吸収層の形成面は表4に示される粗化処理面と反対側の面であり、実施例1~19、22~23及び比較例4、6~8ではM面にレーザー吸収層を形成(S面に粗化処理を行う)し、実施例20および21、比較例9ではS面にレーザー吸収層を形成(M面に粗化処理を行う)した。比較例1~3及び5は、レーザー吸収層を形成しなかった。 Hereinafter, the present invention will be described in detail by way of examples.
(1) Production of Copper Foil and Formation of Laser Absorbing Layer Examples 1 to 21 were carried out by the cathode reduction step of the electrolytic solution, current density, and bath temperature shown in Table 1 and the electrolytic deposition step based on the electrolytic conditions shown in Table 2. Electrolytic copper foils of Comparative Examples 1 to 9 were produced. A laser absorption layer was formed by electrolytic plating treatment of these electrolytic copper foils in a plating bath having a composition shown in Table 3, a treatment surface, and electrolytic conditions (pulse width of pulse voltage, current density, time, bath temperature). In Example 22, a laser absorption layer was formed by alternating current, and in Example 23, a laser absorption layer was formed by MEC-etch bond CZ-8000 treatment. In the electrolysis conditions in Table 3, Ion1 represents the first stage pulse current density, Ion2 represents the second stage pulse current density, and ton1 represents the first stage pulse current application time. ton2 represents the pulse current application time at the second stage, and toff represents the time when the current between the pulse current at the second stage and the pulse current at the first stage is zero. The surface where the laser absorbing layer is formed is the surface opposite to the roughened surface shown in Table 4. In Examples 1 to 19, 22 to 23 and Comparative Examples 4 and 6 to 8, the laser absorbing layer is formed on the M surface. Was formed (roughening treatment was performed on the S surface), and in Examples 20 and 21 and Comparative Example 9, a laser absorption layer was formed on the S surface (roughening treatment was performed on the M surface). In Comparative Examples 1 to 3 and 5, no laser absorption layer was formed.
次に、レーザー吸収層の反対側の面(表4に示される粗化処理面)に粗化粒子の電析により、微細凹凸表面をもつ粗化処理層を形成した。全ての実施例及び比較例において下記に示す粗面化めっき処理の手順で行い、粗化処理層を形成した。
(粗面化めっき処理)
硫酸銅:銅濃度として13~72g/L
硫酸濃度:26~133g/L
DL-りんご酸:0.1~5.0g/L
液温:18~67℃
電流密度:3~67A/dm2
処理時間:1秒~1分55秒 (2) Roughening treatment Next, a roughening treatment layer having a fine concavo-convex surface was formed on the surface opposite to the laser absorption layer (roughening treatment surface shown in Table 4) by electrodeposition of roughening particles. In all Examples and Comparative Examples, the roughening plating process was performed as described below to form a roughening treatment layer.
(Roughening plating treatment)
Copper sulfate: 13-72 g / L as copper concentration
Sulfuric acid concentration: 26-133 g / L
DL-malic acid: 0.1-5.0 g / L
Liquid temperature: 18-67 ° C
Current density: 3 to 67 A / dm 2
Processing time: 1 second to 1 minute 55 seconds
全ての実施例1~23及び比較例1~9について、上記粗化処理層の形成後、粗化処理層上に、下記に示すNiめっき条件で電解めっきすることにより下地層(Niの付着量0.06mg/dm2)を形成した。
<Niめっき条件>
硫酸ニッケル: ニッケル金属として5.0g/L
過硫酸アンモニウム40.0g/L
ほう酸28.5g/L
電流密度1.5A/dm2
pH 3.8
温度28.5℃
時間1秒~2分 (3) Formation of Ni-containing foundation layer For all Examples 1 to 23 and Comparative Examples 1 to 9, after the formation of the roughened layer, electrolysis was performed on the roughened layer under the Ni plating conditions shown below. By plating, a base layer (Ni adhesion amount 0.06 mg / dm 2 ) was formed.
<Ni plating conditions>
Nickel sulfate: 5.0 g / L as nickel metal
Ammonium persulfate 40.0 g / L
Boric acid 28.5g / L
Current density 1.5 A / dm 2
pH 3.8
Temperature 28.5 ° C
Time 1 second-2 minutes
全ての実施例1~23及び比較例1~9について、上記下地層の形成後、この下地層上に、下記に示すZnめっき条件で電解めっきすることにより耐熱処理層(Znの付着量:0.05mg/dm2)を形成した。
<Znめっき条件>
硫酸亜鉛7水和物1~30g/L
水酸化ナトリウム10~300g/L
電流密度0.1~10A/dm2
温度5~60℃
時間1秒~2分 (4) Formation of heat-resistant layer containing Zn For all of Examples 1 to 23 and Comparative Examples 1 to 9, after the formation of the above base layer, electrolytic plating is performed on the base layer under the following Zn plating conditions. Thus, a heat-resistant treatment layer (Zn deposition amount: 0.05 mg / dm 2 ) was formed.
<Zn plating conditions>
Zinc sulfate heptahydrate 1-30g / L
Sodium hydroxide 10-300g / L
Current density 0.1 to 10 A / dm 2
Temperature 5-60 ℃
Time 1 second-2 minutes
全ての実施例1~23及び比較例1~9について、上記耐熱処理層の形成後、この耐熱処理層上に、下記に示すクロムめっき処理条件で処理することにより防錆処理層(Crの付着量:0.02mg/dm2)を形成した。
<クロムめっき条件>
(クロムめっき浴)
無水クロム酸CrO3 2.5g/L
pH 2.5
電流密度0.5A/dm2
温度15~45℃
時間1秒~2分 (5) Formation of Cr-containing anticorrosion treatment layer For all Examples 1 to 23 and Comparative Examples 1 to 9, after the formation of the above heat treatment layer, on the heat treatment layer, the following chromium plating treatment conditions The antirust process layer (Cr adhesion amount: 0.02 mg / dm < 2 >) was formed by processing by.
<Chrome plating conditions>
(Chromium plating bath)
Chromic anhydride CrO3 2.5g / L
pH 2.5
Current density 0.5 A / dm 2
Temperature 15 ~ 45 ℃
Time 1 second-2 minutes
全ての実施例1~23及び比較例1~9について、防錆処理層の形成後、この防錆処理層上に、シランカップリング剤水溶液にメタノールまたはエタノールを添加し、所定のpHに調整した処理液を塗布した。その後、所定の時間保持してから温風で乾燥させることにより、シランカップリング剤層を形成した。 (6) Formation of Silane Coupling Agent Layer For all Examples 1 to 23 and Comparative Examples 1 to 9, after the formation of the antirust treatment layer, methanol or ethanol was added to the antirust treatment layer on the silane coupling agent aqueous solution. And a treatment liquid adjusted to a predetermined pH was applied. Thereafter, the silane coupling agent layer was formed by holding for a predetermined time and drying with warm air.
<箔厚>
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔の厚みを電子天秤により質量厚さとして測定した。結果を表1に示した。 (7) Evaluation method <foil thickness>
The thicknesses of all the surface treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5) were measured as mass thicknesses using an electronic balance. The results are shown in Table 1.
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔を12.7×130mmmmの大きさに切り出し、室温においてインストロン社の1122型引張試験機試験装置により常態における銅箔の引張強度を測定した。また、12.7×130mmmmに切り出した銅箔を220℃で2時間加熱した後に常温まで自然冷却した後、同様に加熱後の引張強度を測定した。測定はIPC-TM-650に準拠した。結果を表4に示した。 <Tensile strength>
All the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5) were cut out to a size of 12.7 × 130 mm mm, and Instron's 1122 at room temperature. The tensile strength of the copper foil in a normal state was measured with a mold tensile tester testing apparatus. Moreover, after heating the copper foil cut out to 12.7 * 130 mmmm at 220 degreeC for 2 hours, and naturally cooling to normal temperature, the tensile strength after a heating was measured similarly. The measurement was based on IPC-TM-650. The results are shown in Table 4.
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔について、BRUKER社のWykoContourGT-Kを用いて表面形状を測定し、形状解析を行い、展開面積比(Sdr)を求めた。形状解析はVSI測定方式でハイレゾCCDカメラを使用し、光源が白色光、測定倍率が10倍、測定範囲が477μm×357.8μm、LateralSamplingが0.38μm、speedが1、Backscanが5μm、Lengthが5μm、Thresholdが5%の条件により行い、TermsRemovalのフィルタ処理をしたあとデータ処理を行なった。結果を表4に示した。 <Development area ratio>
For all the surface treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5), the surface shape was measured using WRUKOContourGT-K manufactured by BRUKER, and the shape analysis was performed. And the development area ratio (Sdr) was determined. The shape analysis uses a high resolution CCD camera with a VSI measurement method, the light source is white light, the measurement magnification is 10 times, the measurement range is 477 μm × 357.8 μm, the lateral sampling is 0.38 μm, the speed is 1, the backscan is 5 μm, and the length is The processing was performed under the conditions of 5 μm and Threshold of 5%, and the data processing was performed after the filtering of TermsRemoval. The results are shown in Table 4.
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の銅箔のYxy表色系においてY,x、zをカラーメータSM-T45(スガ試験機株式会社)によって45°照明0°受光、光源C光2度視野(ハロゲンランプ)を用いて測定することができる。結果を表4に示した。 <Yxy color system>
In the Yxy color system of the copper foils of all Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5), Y, x, and z are color meters SM-T45 (Suga Test Machine) Co., Ltd.), 45 °
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔を200mm×200mmの大きさに切断し、光透過法でピンホールをマーキングした。200mm×200mmサイズの表面処理銅箔を5枚(計0.2m2)について、光学顕微鏡で直径を確認し30μm以上の穴をピンホールとしてカウントした。光学顕微鏡で観察されるピンホールは円形のものや不定形のものがあるが、いずれもピンホールの長径(ピンホールの外周上で最も離れた2点間の距離)を直径として測定した。得られたピンホールの数に基づいて単位面積(m2)当たりのピンホールの数(個/m2)を算出した結果を表4に示した。 <Pinhole>
All surface treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5) are cut into a size of 200 mm × 200 mm, and pinholes are marked by a light transmission method. did. About five 200mm × 200mm size surface-treated copper foils (total 0.2m 2 ), the diameter was confirmed with an optical microscope, and holes of 30 μm or more were counted as pinholes. Pinholes observed with an optical microscope can be either round or irregular, but the major diameter of each pinhole (the distance between the two most distant points on the outer periphery of the pinhole) was measured as the diameter. Table 4 shows the results of calculating the number of pinholes per unit area (m 2 ) (pieces / m 2 ) based on the number of pinholes obtained.
次に、上記処理(1)~(6)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔にドライレジストフィルムを使用してドライエッチングによりL&S=100μm/200μmの線/間隔のレジストパターンを形成した。エッチング液として塩化銅と塩酸を使用して配線パターンのエッチングを行った後、エッチングファクタを測定した。エッチングファクター(Ef)とは、表面処理銅箔の箔厚をH、形成された配線パターンのボトム幅をB.形成された配線パターンのトップ幅をTとするときに、次式で示される値をいう。
Ef=2H/(B-T) <Etching factor>
Next, dry etching was performed using dry resist films on the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (6), and L & S = 100 μm / 200 μm. A resist pattern having a line / interval was formed. After etching the wiring pattern using copper chloride and hydrochloric acid as the etching solution, the etching factor was measured. The etching factor (Ef) is a value expressed by the following equation, where H is the thickness of the surface-treated copper foil, B is the bottom width of the formed wiring pattern, and T is the top width of the formed wiring pattern. Say.
Ef = 2H / (BT)
上記処理により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔2枚を基板FR4に両面に加熱、加圧接合してCCL(銅張積層板)を作製した。次に、CO2レーザー穴あけ加工機により、100ショットのレーザー穴あけ加工を行い開口した数をカウントした。照射エネルギーが50Wの場合と、8Wの場合についてそれぞれの一定の照射時間10msec照射することにより開口した数を表4に示した。照射エネルギーが低い8Wの場合においても、開口数の減少が少ないものは高いレーザー加工性を有するものとして評価することができる。 <Laser numerical aperture>
All the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatment were heated and pressure-bonded to both sides of the substrate FR4 to produce CCL (copper-clad laminate). Next, 100 holes were drilled with a CO2 laser drilling machine, and the number of openings was counted. Table 4 shows the number of apertures formed by irradiation for 10 msec for each irradiation time of 50 W and 8 W. Even in the case of 8 W where the irradiation energy is low, those having a small decrease in numerical aperture can be evaluated as having high laser processability.
上記処理(1)~(5)により得られた全ての実施例1~23及び比較例1~9の表面処理銅箔を200mm×200mmの大きさに切断し、表面処理銅箔と基板FR4を170℃、1.5MPa(圧力)で1時間加熱、加圧接合し、30枚の基板を作製し、目視でシワを確認して、シワのあった基板をシワ不良数1枚としてカウントすることによりシワ不良は発生した数を表4に示した。これにより表面処理銅箔のハンドリング性を評価した。 <Handling: Wrinkle defect count>
All the surface treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above treatments (1) to (5) were cut into a size of 200 mm × 200 mm, and the surface treated copper foil and the substrate FR4 were separated. Heating and pressure bonding at 170 ° C and 1.5 MPa (pressure) for 1 hour to produce 30 substrates, visually check for wrinkles, and count the wrinkled substrate as one wrinkle defect Table 4 shows the number of wrinkle defects. This evaluated the handleability of the surface-treated copper foil.
102 ドラム
103 バフ装置
105 カソード還元装置
106 電解液 101 Deposited
Claims (10)
- 常態における引張強度が400~700MPaであり、220℃で2時間加熱後に常温で測定した引張強度が300MPa以上であり、箔厚が7μm以下であり、少なくとも一方の面の展開面積比(Sdr)が25~120%である表面処理銅箔。 Tensile strength in the normal state is 400 to 700 MPa, tensile strength measured at room temperature after heating at 220 ° C. for 2 hours is 300 MPa or more, foil thickness is 7 μm or less, and the development area ratio (Sdr) of at least one surface is Surface-treated copper foil that is 25-120%.
- 直径30μm以上のピンホールが20個/m2以下である請求項1に記載の表面処理銅箔。 The surface-treated copper foil according to claim 1, wherein the number of pinholes having a diameter of 30 μm or more is 20 / m 2 or less.
- 前記箔厚が6μm以下である請求項1または2に記載の表面処理銅箔。 The surface-treated copper foil according to claim 1 or 2, wherein the foil thickness is 6 µm or less.
- 前記展開面積比(Sdr)が30~80%である請求項1~3のいずれか1項に記載の表面処理銅箔。 The surface-treated copper foil according to any one of claims 1 to 3, wherein the developed area ratio (Sdr) is 30 to 80%.
- 直径30μm以上のピンホールが10個/m2以下である請求項1~4のいずれか1項に記載の表面処理銅箔。 The surface-treated copper foil according to claim 1, wherein the number of pinholes having a diameter of 30 μm or more is 10 / m 2 or less.
- 粗化処理層が電解銅箔の製造過程における電解析出開始面に形成されている請求項1~5のいずれかに記載の表面処理銅箔。 6. The surface-treated copper foil according to claim 1, wherein the roughened layer is formed on an electrolytic deposition starting surface in the process of producing the electrolytic copper foil.
- ダイレクトレーザー加工により加工される回路用表面処理銅箔であって、常態における引張強度が400~700MPaであり、220℃で2時間加熱後に常温で測定した引張強度が300MPa以上であり、箔厚が7μm以下であり、少なくとも一方の面の展開面積比(Sdr)が25~120%であり、かつレーザー照射面がYxy表色系においてYが25.0~65.5%、xが0.30~0.48%、yが0.28~0.41%を有する回路用表面処理銅箔。 Surface treated copper foil processed by direct laser processing, with a normal tensile strength of 400-700 MPa, a tensile strength measured at room temperature after heating at 220 ° C. for 2 hours, and a foil thickness of 300 MPa or more 7 μm or less, the development area ratio (Sdr) of at least one surface is 25 to 120%, and the laser irradiation surface is Yxy color system, Y is 25.0 to 65.5%, x is 0.30 to 0.48%, and y is Surface-treated copper foil for circuits having 0.28 to 0.41%.
- 直径30μm以上のピンホールの数が20個/m2以下である請求項7に記載の回路用表面処理銅箔。 The surface-treated copper foil for circuit according to claim 7, wherein the number of pinholes having a diameter of 30 μm or more is 20 / m 2 or less.
- 直径30μm以上のピンホールの数が10個/m2以下である請求項7に記載の回路用表面処理銅箔。 The surface-treated copper foil for circuit according to claim 7, wherein the number of pinholes having a diameter of 30 μm or more is 10 / m 2 or less.
- 請求項1~6のいずれか1項に記載の表面処理銅箔又は請求項7~9のいずれか1項に記載の回路用表面処理銅箔を含み、該表面処理銅箔の粗化処理層側の面に、絶縁基板を有する銅張積層板。 A surface-treated copper foil according to any one of claims 1 to 6 or a surface-treated copper foil for circuit according to any one of claims 7 to 9, and a roughened layer of the surface-treated copper foil A copper clad laminate having an insulating substrate on the side surface.
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CN201880020021.6A CN110475909B (en) | 2017-03-30 | 2018-03-23 | Surface-treated copper foil and copper-clad laminate using same |
KR1020197028362A KR102353878B1 (en) | 2017-03-30 | 2018-03-23 | Surface-treated copper foil and copper clad laminate using the same |
JP2018545262A JP6529684B2 (en) | 2017-03-30 | 2018-03-23 | Surface-treated copper foil and copper-clad laminate using the same |
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KR (1) | KR102353878B1 (en) |
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JP2019173164A (en) * | 2018-03-28 | 2019-10-10 | 日立金属株式会社 | Method of manufacturing aluminium foil |
JP2020183565A (en) * | 2019-05-08 | 2020-11-12 | 古河電気工業株式会社 | Electrolytic copper foil, surface-treated copper foil using electrolytic copper foil, copper-clad laminate using surface-treated copper foil, and printed circuit board |
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Also Published As
Publication number | Publication date |
---|---|
TWI693306B (en) | 2020-05-11 |
CN110475909B (en) | 2021-12-24 |
CN110475909A (en) | 2019-11-19 |
JP6529684B2 (en) | 2019-06-12 |
KR20190133681A (en) | 2019-12-03 |
KR102353878B1 (en) | 2022-01-19 |
TW201903212A (en) | 2019-01-16 |
JPWO2018181061A1 (en) | 2019-04-04 |
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