+

WO2018174066A1 - Particules conductrices, matériau conducteur et structure de connexion - Google Patents

Particules conductrices, matériau conducteur et structure de connexion Download PDF

Info

Publication number
WO2018174066A1
WO2018174066A1 PCT/JP2018/011068 JP2018011068W WO2018174066A1 WO 2018174066 A1 WO2018174066 A1 WO 2018174066A1 JP 2018011068 W JP2018011068 W JP 2018011068W WO 2018174066 A1 WO2018174066 A1 WO 2018174066A1
Authority
WO
WIPO (PCT)
Prior art keywords
solder
electrode
particles
conductive
conductive particles
Prior art date
Application number
PCT/JP2018/011068
Other languages
English (en)
Japanese (ja)
Inventor
敬士 久保田
敬三 西岡
Original Assignee
積水化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to JP2018517647A priority Critical patent/JPWO2018174066A1/ja
Priority to CN201880004430.7A priority patent/CN109983544A/zh
Publication of WO2018174066A1 publication Critical patent/WO2018174066A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Definitions

  • the present invention relates to conductive particles containing solder.
  • the present invention also relates to a conductive material and a connection structure using the conductive particles.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in a binder.
  • the anisotropic conductive material is used for obtaining various connection structures.
  • Examples of the connection using the anisotropic conductive material include a connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), a connection between a semiconductor chip and a flexible printed circuit board (COF (Chip on Film)), and a semiconductor.
  • Examples include connection between a chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
  • a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
  • Patent Document 1 describes an anisotropic conductive material containing conductive particles and a resin component that cannot be cured at the melting point of the conductive particles.
  • the conductive particles tin (Sn), indium (In), bismuth (Bi), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd), gallium (Ga) ), Silver (Ag), thallium (Tl) and other metals, and alloys of these metals.
  • Patent Document 1 a resin heating step for heating the anisotropic conductive material to a temperature higher than the melting point of the conductive particles and at which the curing of the resin component is not completed, and a resin component curing step for curing the resin component The electrical connection between the electrodes is described.
  • Patent Document 1 describes that mounting is performed with the temperature profile shown in FIG.
  • conductive particles melt in a resin component that is not completely cured at a temperature at which the anisotropic conductive material is heated.
  • Patent Document 2 includes an adhesive tape (conductive material) that includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Is disclosed.
  • Patent Document 3 discloses conductive particles including particles and a conductive coating formed on the surface of the particles by an electroless plating method.
  • the conductive coating includes a nickel plating coating, a tin plating coating, and a bismuth plating coating formed in order from the inside by electroless plating.
  • the conductive coating has a silver plating coating on the outermost surface.
  • the conductive particles can be used for anisotropic conductive materials.
  • conductive particles or solder particles are likely to be oxidized, and the impact resistance of the connection portion between the connected electrodes may not be sufficiently increased.
  • the impact resistance of the connection portion is not sufficiently high, a crack or the like may occur in the connection portion due to an impact such as dropping of the substrate. As a result, it is difficult to sufficiently improve the conduction reliability between the electrodes.
  • SAC silver-copper alloy
  • conductive particles comprising solder particles having a melting point of less than 200 ° C. and a coating portion disposed on the surface of the solder particles, wherein the coating portion contains silver.
  • the solder particles include tin and bismuth.
  • the content of the silver is 1% by weight or more and 20% by weight or less in 100% by weight of the conductive particles.
  • the surface area covered by the coating portion on the surface of the solder particles is 80% or more in the entire surface area of the solder particles of 100%.
  • the thickness of the covering portion is 0.1 ⁇ m or more and 5 ⁇ m or less.
  • the conductive particle includes a metal part containing nickel between the outer surface of the solder particle and the covering part.
  • a conductive material including the above-described conductive particles and a thermosetting compound.
  • the content of the conductive particles exceeds 50% by weight in 100% by weight of the conductive material.
  • thermosetting compound includes a thermosetting compound having a polyether skeleton.
  • the conductive material includes a flux having a melting point of 50 ° C. or higher and 140 ° C. or lower.
  • the viscosity at 25 ° C. is 20 Pa ⁇ s or more and 600 Pa ⁇ s or less.
  • the conductive material is a conductive paste.
  • a first connection target member having at least one first electrode on the surface
  • a second connection target member having at least one second electrode on the surface
  • the first connection target member and a connection part connecting the second connection target member wherein the material of the connection part includes the conductive particles described above, and the first electrode and the second electrode
  • a connection structure is provided in which an electrode is electrically connected by a solder portion in the connection portion.
  • the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode.
  • the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other.
  • the conductive particles according to the present invention include solder particles having a melting point of less than 200 ° C. and a covering portion disposed on the surface of the solder particles.
  • coated part contains silver. Since the conductive particle according to the present invention has the above-described configuration, it can be easily mounted at a low temperature, and the impact resistance of the connection portion can be effectively enhanced.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • 2A to 2C are cross-sectional views for explaining each step of an example of a method for manufacturing a connection structure using a conductive material according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a modification of the connection structure.
  • FIG. 4 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention.
  • the electroconductive particle which concerns on this invention is equipped with a solder particle and the coating
  • fusing point of the said solder particle is less than 200 degreeC.
  • coated part contains silver.
  • the present invention since the above configuration is provided, it can be easily mounted at a low temperature, and the impact resistance of the connection portion can be effectively increased.
  • connection structure when the connection structure is manufactured, after a conductive material containing conductive particles is arranged on a connection target member such as a substrate by screen printing or the like, it is left for a certain period until the electrodes are electrically connected.
  • metal ions may be eluted from the conductive particles while being left for a certain period of time.
  • the eluted metal ions may accelerate the curing of the thermosetting compound in the conductive material and may increase the viscosity of the conductive material.
  • the solder in the conductive particles cannot be efficiently arranged on the electrodes, and the conduction reliability between the electrodes may be lowered.
  • the conductive material containing the conductive particles is placed and left for a certain period of time, the conductive material is prevented from thickening and the solder in the conductive particles on the electrode is prevented. Can be arranged efficiently, and the conduction reliability between the electrodes can be sufficiently enhanced.
  • the present invention since it corresponds to an electrode having a narrow electrode width and inter-electrode width, even if the particle diameter of the solder particles is reduced, the surface of the solder particles can be prevented from being oxidized, and the solder wettability can be reduced. Can keep good.
  • a conventional conductive material when the electrode width or the inter-electrode width is narrow, there is a tendency that it is difficult to gather solder on the electrodes.
  • the present invention even if the electrode width or the inter-electrode width is narrow, the solder in the conductive particles can be sufficiently gathered on the electrodes.
  • the conductive particles have a covering portion containing silver.
  • the plurality of conductive particles are likely to gather between the upper and lower electrodes, and the plurality of conductive particles are It can arrange
  • the present invention it is possible to prevent displacement between the electrodes.
  • the alignment between the first electrode and the second electrode is performed. Even in a shifted state, the shift can be corrected and the first electrode and the second electrode can be connected (self-alignment effect).
  • FIG. 4 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention.
  • the 4 includes a solder particle 22 and a covering portion 23 disposed on the surface of the solder particle 22.
  • the conductive particle 21 illustrated in FIG. The melting point of the solder particles 22 is less than 200 ° C.
  • the covering portion 23 contains silver.
  • the covering portion 23 covers the surface of the solder particle 22.
  • the conductive particles 21 are coated particles in which the surface of the solder particles 22 is coated with the coating portion 23.
  • the covering portion may completely cover the surface of the solder particles, or may not completely cover the surface of the solder particles.
  • the solder particles may have a portion that is not covered by the covering portion.
  • FIG. 5 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention.
  • the conductive particle 31 includes a metal part 32 between the solder particle 22 and the covering part 23.
  • the metal part 32 covers the surface of the solder particle 22.
  • the covering portion 23 covers the surface of the metal portion 32.
  • the covering portion 23 contains silver.
  • the metal part 32 contains nickel.
  • the conductive particle 31 is a coated particle in which the surface of the solder particle 22 is coated with the metal portion 32 and the covering portion 23.
  • the particle diameter of the conductive particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, further preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 40 ⁇ m or less, and even more preferably. Is 30 ⁇ m or less, more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less. When the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be arranged more efficiently on the electrode.
  • the particle diameter of the conductive particles is particularly preferably 5 ⁇ m or more and 30 ⁇ m or less.
  • the particle diameter of the conductive particles indicates a number average particle diameter.
  • the particle diameter of the conductive particles may be determined by, for example, observing 50 arbitrary conductive particles with an electron microscope or an optical microscope, calculating an average value of the particle diameter of each conductive particle, or measuring a laser diffraction particle size distribution. It is calculated by doing.
  • the particle diameter variation coefficient (CV value) of the conductive particles is preferably 5% or more, more preferably 10% or more, preferably 40% or less, more preferably 30% or less.
  • CV value of the particle diameter of the conductive particles may be less than 5%.
  • the coefficient of variation (CV value) can be measured as follows.
  • CV value (%) ( ⁇ / Dn) ⁇ 100 ⁇ : Standard deviation of particle diameter of conductive particles Dn: Average value of particle diameter of conductive particles
  • the shape of the conductive particles is not particularly limited.
  • the conductive particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
  • solder particles As for the said solder particle, both a center part and an outer surface are formed with the solder.
  • the solder particles are particles in which both the central portion and the outer surface are solder.
  • the conductive particles are conductive on the electrodes. Particles are difficult to collect.
  • the solder bonding property between the conductive particles is low, the conductive particles that have moved onto the electrodes tend to move out of the electrodes, and the effect of suppressing displacement between the electrodes also tends to be low.
  • the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
  • the solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C. or lower.
  • the low melting point metal particles are particles containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably less than 200 ° C., further preferably 160 ° C. or lower.
  • the melting point of the solder particles is less than 200 ° C.
  • the solder particles are preferably a low melting point solder having a melting point of less than 200 ° C., and more preferably a low melting point solder having a melting point of less than 150 ° C.
  • the solder particles preferably contain tin and bismuth.
  • the content of tin in 100% by weight of metal contained in the solder particles is preferably 30% by weight or more, more preferably 40% by weight or more, further preferably 70% by weight or more, and particularly preferably 90% by weight or more. .
  • the connection reliability between the solder portion and the electrode is further enhanced.
  • the content of bismuth is preferably 40% by weight or more, more preferably 45% by weight or more, still more preferably 48% by weight or more, and particularly preferably 50% by weight or more.
  • the connection reliability between the solder portion and the electrode is further enhanced.
  • the content of tin and bismuth is determined using a high frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). Can be measured.
  • ICP-AES high frequency inductively coupled plasma emission spectrometer
  • EDX-800HS fluorescent X-ray analyzer
  • the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes.
  • the connection resistance is lowered.
  • the bonding strength between the solder part and the electrode is increased.
  • peeling between the solder part and the electrode is less likely to occur, and the conduction reliability and the connection reliability are further improved.
  • the low melting point metal constituting the solder particles is not particularly limited as long as the melting point is less than 200 ° C.
  • the low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy because of its excellent wettability to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
  • the solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms.
  • the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like.
  • Preferred is a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which has a low melting point and is lead-free. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
  • the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium, Metals such as molybdenum and palladium may be included.
  • the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc.
  • the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
  • the particle diameter of the solder particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, further preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 40 ⁇ m or less, and even more preferably. It is 30 ⁇ m or less, more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less.
  • the particle size of the solder particles is particularly preferably 5 ⁇ m or more and 30 ⁇ m or less.
  • the particle size of the solder particles indicates a number average particle size.
  • the particle size of the solder particles is, for example, observing 50 arbitrary solder particles with an electron microscope or an optical microscope, calculating an average value of the particle size of each solder particle, or performing a laser diffraction particle size distribution measurement. Is required.
  • the coefficient of variation (CV value) of the particle size of the solder particles is preferably 5% or more, more preferably 10% or more, preferably 40% or less, more preferably 30% or less.
  • the variation coefficient of the particle diameter of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrode.
  • the CV value of the particle diameter of the solder particles may be less than 5%.
  • the coefficient of variation (CV value) can be measured as follows.
  • CV value (%) ( ⁇ / Dn) ⁇ 100 ⁇ : Standard deviation of particle diameter of solder particles Dn: Average value of particle diameter of solder particles
  • the shape of the solder particles is not particularly limited.
  • the solder particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
  • coated part is arrange
  • coated part contains silver.
  • coated part may contain only silver and may contain metals other than silver.
  • a metal other than silver contained in the covering portion is not particularly limited, and examples thereof include gold, copper, nickel, palladium, and titanium.
  • the content of the silver in 100% by weight of the conductive particles is preferably 1% by weight or more, more preferably 5% by weight or more, further preferably 10% by weight or more, particularly preferably 11% by weight or more, preferably It is 20 weight% or less, More preferably, it is 15 weight% or less, More preferably, it is 13 weight% or less.
  • the silver content is not less than the above lower limit and not more than the above upper limit, it can be more easily mounted at a low temperature, and the impact resistance of the connecting portion can be further effectively improved.
  • the surface area of the solder particles is covered by the covering portion on the surface of the solder particles in 100% of the entire surface area of the solder particles.
  • the surface area (coverage) is preferably 80% or more, more preferably 90% or more.
  • the upper limit of the said coverage is not specifically limited. The coverage may be 100% or less.
  • the coverage can be calculated by performing Ag mapping and conducting image analysis by conducting SEM-EDX analysis on the conductive particles.
  • the thickness of the covering portion is preferably 0.1 ⁇ m or more, more preferably 1 ⁇ m or more, Preferably it is 5 micrometers or less, More preferably, it is 2 micrometers or less.
  • coated part means the thickness of the coating
  • the thickness of the covering portion is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, further preferably 1 ⁇ m or more, particularly preferably 1.5 ⁇ m or more. Yes, preferably 5 ⁇ m or less, more preferably 2 ⁇ m or less.
  • the covering portion is formed only of silver, when the thickness of the covering portion is not less than the above lower limit and not more than the above upper limit, it can be more easily mounted at a low temperature, and the impact resistance of the connection portion Can be increased more effectively.
  • the covering portion may be a single layer or two or more layers (multilayer).
  • the thickness of the covering portion means the thickness of the entire covering portion.
  • the thickness of the covering portion can be calculated from the difference between the particle diameter of the solder particles and the particle diameter of the conductive particles.
  • the ratio of the thickness of the covering portion to the particle diameter of the solder particles Is preferably 0.001 or more, more preferably 0.01 or more, preferably 5 or less, more preferably 1 or less.
  • the conductive particles provided with the covering portion as a conductive material or the like, elution of metal ions from the conductive particles can be effectively prevented, and thickening of the conductive material can be effectively prevented.
  • the conductive particles are provided with the covering portion, the surface of the solder of the conductive particles can be effectively prevented from being oxidized, and the wettability of the solder can be further improved.
  • the solder of the solder particles in the conductive particles and the silver contained in the covering portion exist independently and are not alloyed.
  • the conductive particles before the conductive connection can be melted at the melting point of the solder particles. Since the solder particles are preferably low melting point solder having a melting point of less than 200 ° C., the conductive particles before conductive connection (mounting) can be melted at a relatively low temperature, and can be easily conductive connection at a low temperature. (Implementation) can be.
  • the solder of the solder particles in the conductive particles and the silver contained in the covering portion are alloyed by heat applied during the conductive connection (mounting).
  • the melting point of the connection part (solder part) after the conductive connection (mounting) becomes higher than the melting point of the solder particles, the impact resistance of the connection part (solder part) can be effectively increased. it can.
  • the conductive particles preferably include a metal part including nickel between the outer surface of the solder particles and the covering part.
  • the conductive particles preferably include a metal portion disposed on the surface of the solder particle and a covering portion disposed on the surface of the metal portion.
  • the metal part preferably contains nickel.
  • the metal part may contain a metal other than nickel.
  • a metal other than nickel contained in the metal part is not particularly limited, and examples thereof include gold, silver, copper, palladium, and titanium.
  • the thickness of the metal part is preferably 0.1 ⁇ m or more, more preferably 1 ⁇ m or more, Preferably it is 5 micrometers or less, More preferably, it is 2 micrometers or less.
  • the thickness of the said metal part means thickness only the part with a metal part arrange
  • the thickness of the metal part is preferably from the viewpoint of more easily mounting at a low temperature and further enhancing the impact resistance of the connection part more effectively. Is 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, further preferably 1 ⁇ m or more, preferably 5 ⁇ m or less, more preferably 2 ⁇ m or less.
  • the metal part may be a single layer or two or more layers (multilayer).
  • the thickness of the metal part means the thickness of the entire metal part.
  • the thickness of the metal part can be determined, for example, by observing the cross section of the conductive particles using a transmission electron microscope (TEM).
  • TEM transmission electron microscope
  • the ratio of the thickness of the metal portion to the particle diameter of the solder particles Is preferably 0.001 or more, more preferably 0.01 or more, preferably 5 or less, more preferably 1 or less.
  • the conductive material according to the present invention preferably includes the above-described conductive particles and a thermosetting compound.
  • the conductive material is preferably liquid at 25 ° C., and preferably a conductive paste.
  • the viscosity ( ⁇ 25) at 25 ° C. of the conductive material is preferably 20 Pa ⁇ s or more, more preferably 30 Pa ⁇ s or more. , Preferably 600 Pa ⁇ s or less, more preferably 300 Pa ⁇ s or less.
  • the said viscosity ((eta) 25) can be suitably adjusted with the kind and compounding quantity of a compounding component.
  • the viscosity ( ⁇ 25) can be measured under conditions of 25 ° C. and 5 rpm using, for example, an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.).
  • the viscosity ( ⁇ mp) of the conductive material at the melting point of the conductive particles is preferably 0.1 Pa ⁇ s or more, more preferably 0. It is 5 Pa ⁇ s or more, preferably 5 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
  • the viscosity ( ⁇ mp) can be appropriately adjusted according to the type and amount of the compounding component.
  • the melting point of the conductive particles is a temperature that tends to affect the movement of the conductive particles onto the electrode of the solder.
  • the viscosity ( ⁇ mp) of the conductive material at the melting point of the conductive particles is, for example, strain control 1 rad, frequency 1 Hz, temperature rising rate 20 ° C./min, measurement temperature range 40 ° C. using STRESSTECH (manufactured by REOLOGICA). It can be measured under the condition of the melting point of the conductive particles. In this measurement, the viscosity at the melting point of the conductive particles is defined as the viscosity ( ⁇ mp) of the conductive material.
  • the conductive material can be used as a conductive paste and a conductive film.
  • the conductive paste is preferably an anisotropic conductive paste, and the conductive film is preferably an anisotropic conductive film. From the viewpoint of more efficiently arranging the solder in the conductive particles on the electrode, the conductive material is preferably a conductive paste.
  • the conductive material is preferably used for electrical connection of electrodes.
  • the conductive material is preferably a circuit connection material.
  • the content of the conductive particles in the conductive material of 100% by weight preferably exceeds 50% by weight.
  • the content of the conductive particles in 100% by weight of the conductive material is preferably 50% by weight or more, more preferably 70% by weight or more, preferably 90% by weight or less, more preferably 80% by weight or less. .
  • the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and a large number of conductive particles are arranged between the electrodes. And the conduction reliability is further enhanced. From the viewpoint of further improving the conduction reliability, the content of the conductive particles is preferably large.
  • (meth) acryl means one or both of “acryl” and “methacryl”
  • (meth) acrylate means one or both of “acrylate” and “methacrylate”.
  • the conductive material preferably contains a thermosetting compound.
  • the thermosetting compound is a compound that can be cured by heating.
  • examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • the thermosetting compound is preferably an epoxy compound or an episulfide compound. As for the said thermosetting compound, only 1 type may be used and 2 or more types may be used together.
  • the thermosetting compound preferably includes a thermosetting compound having a polyether skeleton.
  • thermosetting compound having a polyether skeleton examples include a compound having a glycidyl ether group at both ends of an alkyl chain having 3 to 12 carbon atoms and a polyether skeleton having 2 to 4 carbon atoms.
  • examples thereof include polyether type epoxy compounds having structural units in which 2 to 10 are bonded continuously.
  • thermosetting compound includes a thermosetting compound having a triazine skeleton. Is preferred.
  • thermosetting compound having a triazine skeleton examples include triazine triglycidyl ether and the like. PAS, TEPIC-VL, TEPIC-UC) and the like.
  • the above-mentioned epoxy compound includes an aromatic epoxy compound.
  • the epoxy compound is preferably a crystalline epoxy compound such as a resorcinol type epoxy compound, a naphthalene type epoxy compound, a biphenyl type epoxy compound, or a benzophenone type epoxy compound.
  • the epoxy compound is preferably an epoxy compound that is solid at normal temperature (23 ° C.) and has a melting temperature equal to or lower than the melting point of the solder.
  • the melting temperature is preferably 100 ° C. or lower, more preferably 80 ° C. or lower, and preferably 40 ° C. or higher.
  • the first connection target member and the second connection target are high when the connection target member is bonded to each other when the viscosity is high and acceleration is applied by impact such as conveyance.
  • the positional deviation with respect to the member can be suppressed.
  • the viscosity of the conductive material can be greatly reduced by the heat during curing, and the aggregation of solder in the conductive particles can be efficiently advanced.
  • the thermosetting compound preferably includes a thermosetting compound that is liquid at 25 ° C.
  • examples of the thermosetting compound that is liquid at 25 ° C. include epoxy compounds and episulfide compounds.
  • the content of the thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. More preferably, it is 98 weight% or less, More preferably, it is 90 weight% or less, Most preferably, it is 80 weight% or less.
  • the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles is more efficiently arranged on the electrodes, and the displacement between the electrodes is further suppressed, and the electrodes The conduction reliability between them can be further enhanced. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting compound is large.
  • the conductive material preferably contains a thermosetting agent.
  • the conductive material preferably contains a thermosetting agent together with the thermosetting compound.
  • the thermosetting agent thermosets the thermosetting compound.
  • examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation curing agent, and a thermal radical generator.
  • the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
  • the thermosetting agent is preferably an imidazole curing agent, a thiol curing agent, or an amine curing agent. Further, from the viewpoint of enhancing the storage stability when the thermosetting compound and the thermosetting agent are mixed, the thermosetting agent is preferably a latent curing agent.
  • the latent curing agent is preferably a latent imidazole curing agent, a latent thiol curing agent, or a latent amine curing agent.
  • the said thermosetting agent may be coat
  • the imidazole curing agent is not particularly limited.
  • Examples of the imidazole curing agent include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6. -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adducts Etc.
  • the thiol curing agent is not particularly limited.
  • Examples of the thiol curing agent include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate.
  • the amine curing agent is not particularly limited.
  • examples of the amine curing agent include hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5] undecane, bis (4 -Aminocyclohexyl) methane, metaphenylenediamine, diaminodiphenylsulfone and the like.
  • the thermal cationic curing agent is not particularly limited.
  • Examples of the thermal cationic curing agent include iodonium-based cationic curing agents, oxonium-based cationic curing agents, and sulfonium-based cationic curing agents.
  • Examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
  • Examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
  • Examples of the sulfonium-based cationic curing agent include tri-p-tolylsulfonium hexafluorophosphate.
  • the thermal radical generator is not particularly limited.
  • the thermal radical generator include azo compounds and organic peroxides.
  • the azo compound include azobisisobutyronitrile (AIBN).
  • AIBN azobisisobutyronitrile
  • the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
  • the reaction initiation temperature of the thermosetting agent is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, further preferably 80 ° C. or higher, preferably 250 ° C. or lower, more preferably 200 ° C. or lower, and further preferably 150 ° C. Hereinafter, it is particularly preferably 140 ° C. or lower.
  • the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles is more efficiently arranged on the electrode.
  • the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder in the conductive particles, and is higher by 5 ° C. or more. More preferably, it is more preferably 10 ° C. or higher.
  • the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
  • the content of the thermosetting agent is not particularly limited.
  • the content of the thermosetting agent with respect to 100 parts by weight of the thermosetting compound is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight or less, more preferably 75 parts by weight or less. It is easy to fully harden a thermosetting compound as content of a thermosetting agent is more than the said minimum.
  • the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
  • the conductive material preferably contains a flux.
  • the flux is not particularly limited.
  • the flux generally used for soldering etc. can be used.
  • Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an amine compound, and an organic compound.
  • Examples include acid and rosin.
  • As for the said flux only 1 type may be used and 2 or more types may be used together.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
  • the flux may be an organic acid having two or more carboxyl groups, or pine resin.
  • organic acid having two or more carboxyl groups examples include succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, and sebacic acid.
  • amine compound examples include cyclohexylamine, dicyclohexylamine, benzylamine, benzhydrylamine, imidazole, benzimidazole, phenylimidazole, carboxybenzimidazole, benzotriazole, carboxybenzotriazole, and the like.
  • the above rosins are rosins whose main component is abietic acid.
  • the rosins include abietic acid and acrylic modified rosin.
  • the flux is preferably a rosin, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
  • the melting point (activation temperature) of the flux is preferably 10 ° C. or higher, more preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. Hereinafter, it is more preferably 160 ° C. or lower, further preferably 150 ° C. or lower, and still more preferably 140 ° C. or lower.
  • the melting point (activation temperature) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower.
  • the melting point (activation temperature) of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • Examples of the flux having a melting point (activation temperature) of 80 ° C. or higher and 190 ° C. or lower include succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point) 104 ° C.), dicarboxylic acids such as suberic acid (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), malic acid (melting point 130 ° C.) and the like.
  • the boiling point of the flux is preferably 200 ° C. or lower.
  • the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, and more preferably 5 ° C. or higher. More preferably, it is 10 ° C. or higher.
  • the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, and more preferably 5 ° C or higher. More preferably, it is 10 ° C. or higher.
  • the flux may be dispersed in the conductive material or may be adhered on the surface of the conductive particles.
  • the melting point of the flux is higher than the melting point of the solder in the conductive particles, the solder in the conductive particles can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the thermal conductivity, the temperature rise of the electrode portion is fast. At the stage where the melting point of the solder exceeds the melting point of the conductive particles, the inside of the conductive particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed.
  • the temperature of the electrode portion since the temperature of the electrode portion first reaches the melting point (activation temperature) of the flux, the oxide film on the surface of the conductive particles that has come preferentially on the electrode is removed, and the solder in the conductive particles becomes the electrode. Can spread on the surface of the surface. Thereby, the solder in electroconductive particle can be efficiently aggregated on an electrode.
  • the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
  • the conductive material may not contain flux. When the content of the flux is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surfaces of the conductive particles and the electrodes, and the oxide film formed on the surfaces of the conductive particles and the electrodes. Can be more effectively removed.
  • the conductive material is Insulating particles are preferably included.
  • the insulating particles may not be attached to the surface of the solder particles.
  • the insulating particles are preferably present apart from the solder particles.
  • the particle diameter of the insulating particles is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, further preferably 25 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 75 ⁇ m or less, and even more preferably 50 ⁇ m or less.
  • the particle diameter of the insulating particles is not less than the above lower limit and not more than the above upper limit, the interval between the connection target members connected by the cured material of the conductive material and the interval between the connection target members connected by the solder portion are It becomes even more moderate.
  • the material for the insulating particles includes an insulating resin and an insulating inorganic substance.
  • the insulating resin include polyolefin compounds, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, cross-linked thermoplastic resins, thermosetting resins, and water-soluble resins. Can be mentioned.
  • Examples of the polyolefin compound include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid ester copolymer.
  • Examples of the (meth) acrylate polymer include polymethyl (meth) acrylate, polyethyl (meth) acrylate, and polybutyl (meth) acrylate.
  • Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB type styrene-butadiene block copolymer, SBS type styrene-butadiene block copolymer, and hydrogenated products thereof.
  • Examples of the thermoplastic resin include vinyl polymers and vinyl copolymers.
  • thermosetting resin an epoxy resin, a phenol resin, a melamine resin, etc.
  • water-soluble resin examples include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, and methyl cellulose.
  • a water-soluble resin is preferable, and polyvinyl alcohol is more preferable.
  • Examples of the insulating inorganic material include silica and organic-inorganic hybrid particles.
  • the particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle
  • Examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the content of the insulating particles in 100% by weight of the conductive material is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, preferably 10% by weight or less, more preferably 5% by weight. % Or less.
  • the conductive material may not include the insulating particles. When the content of the insulating particles is not less than the above lower limit and not more than the above upper limit, the interval between connection target members connected by the cured material of the conductive material and the interval between connection target members connected by the solder portion are It becomes even more moderate.
  • the conductive material may be, for example, a coupling agent, a light-shielding agent, a reactive diluent, an antifoaming agent, a leveling agent, a filler, an extender, a softening agent, a plasticizer, a polymerization catalyst, a curing catalyst, or a coloring agent.
  • Various additives such as an agent, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be included.
  • connection structure includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection object member and the connection part which has connected the said 2nd connection object member are provided.
  • the material of the connection portion includes the conductive particles described above.
  • the connection portion is the above-described conductive particle or the above-described conductive material.
  • the connection portion is formed of the conductive particles described above or the conductive material described above.
  • the connection portion is preferably a cured product of the conductive material described above.
  • the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
  • the conductive particles or the conductive material described above is used to form the conductive particles or the conductive particles on the surface of the first connection target member having at least one first electrode on the surface.
  • the manufacturing method of the connection structure includes a second connection target having at least one second electrode on the surface of the conductive particle or the conductive material opposite to the first connection target member side.
  • the connection part connecting the first connection target member and the second connection target member is formed by heating the conductive material to a temperature equal to or higher than the melting point of the conductive particles.
  • a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion, the conductive electrode or the conductive material is heated above the curing temperature of the thermosetting compound.
  • the specific conductive particles or the specific conductive material is used. Therefore, the conductive particles gather between the first electrode and the second electrode. It is easy to efficiently arrange the conductive particles on the electrode (line). Moreover, it is difficult for some of the conductive particles to be disposed in a region (space) where no electrode is formed, and the amount of conductive particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
  • the conductive material is not a conductive film, It is preferable to use a conductive paste.
  • the thickness of the solder part between the electrodes is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less.
  • the solder wetted area on the surface of the electrode is preferably 50% or more, more preferably 70% or more, and preferably 100% or less.
  • the conductive particles or the conductive material in the step of arranging the second connection target member and the step of forming the connection portion, the conductive particles or the conductive material is not pressurized,
  • the weight of the second connection target member is preferably added.
  • the conductive particles or the conductive material may include a pressurized pressure that exceeds the force of the weight of the second connection target member. Is preferably not added. In these cases, the uniformity of the amount of solder can be further enhanced in the plurality of solder portions.
  • the thickness of the solder portion can be increased more effectively, and a plurality of conductive particles are likely to gather between the electrodes, and the plurality of conductive particles are arranged more efficiently on the electrodes (lines). be able to.
  • the electrical connection between the laterally adjacent electrodes that should not be connected can be further prevented, and the insulation reliability can be further improved.
  • a conductive paste is used instead of a conductive film, it becomes easy to adjust the thicknesses of the connection part and the solder part depending on the amount of the conductive paste applied.
  • the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
  • the melt viscosity of the conductive film compared with the conductive paste, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the conductive particles, and the aggregation of the solder in the conductive particles tends to be hindered.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
  • Part 4 is formed of the conductive material described above.
  • the conductive material includes a thermosetting compound, a thermosetting agent, and conductive particles.
  • a conductive paste is used as the conductive material.
  • connection part 4 has a solder part 4A in which a plurality of conductive particles gather and are joined to each other, and a cured part 4B in which a thermosetting compound is thermally cured.
  • the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
  • the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
  • the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
  • electroconductive particle does not exist in the connection part 4, in the area
  • a region (cured product portion 4B portion) different from the solder portion 4A there are no conductive particles separated from the solder portion 4A. If the amount is small, conductive particles may be present in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a. .
  • connection structure 1 As shown in FIG. 1, in the connection structure 1, after a plurality of conductive particles gather between the first electrode 2a and the second electrode 3a and the plurality of conductive particles melt, the conductive particles The melted material solidifies after the surface of the electrode wets and spreads to form the solder portion 4A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. This also increases the conduction reliability and connection reliability in the connection structure 1. In addition, when a flux is contained in the conductive material, the flux is generally gradually deactivated by heating.
  • connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
  • the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
  • the connection part 4X has the solder part 4XA and the hardened
  • most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
  • the solder part 4XA protruding laterally from the region where the first and second electrodes 2a, 3a are opposed is a part of the solder part 4XA and is not a conductive particle separated from the solder part 4XA.
  • the amount of conductive particles separated from the solder portion can be reduced, but the conductive particles separated from the solder portion may exist in the cured product portion.
  • connection structure 1X If the use amount of the conductive particles is reduced, it becomes easy to obtain the connection structure 1. If the usage-amount of electroconductive particle is increased, it will become easy to obtain the connection structure 1X.
  • connection structure 1, 1X when the part which 1st electrode 2a and 2nd electrode 3a oppose in the lamination direction of 1st electrode 2a, connection part 4, 4X, and 2nd electrode 3a is seen
  • the solder portions 4A and 4XA in the connection portions 4 and 4X are arranged in 50% or more of the area of 100% of the facing portion between the first electrode 2a and the second electrode 3a.
  • the solder portions 4A and 4XA in the connection portions 4 and 4X satisfy the above-described preferable mode, the conduction reliability can be further improved.
  • the solder portion in the connecting portion is arranged in 50% or more of the area of 100% of the portion facing the two electrodes.
  • the solder portion in the connection portion is disposed in 60% or more of 100% of the area of the portion facing the two electrodes.
  • the solder portion in the connecting portion is arranged in 70% or more of the area of 100% of the portion facing the two electrodes.
  • the solder portion in the connecting portion is disposed in 80% or more of 100% of the area facing the two electrodes.
  • the solder portion in the connection portion is disposed in 90% or more of the area of 100% of the portion facing the two electrodes.
  • connection portion When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, It is preferable that 60% or more of the solder portion in the connection portion is disposed in a portion where the electrode and the second electrode face each other. When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, More preferably, 70% or more of the solder portion in the connection portion is disposed in a portion where the electrode and the second electrode face each other.
  • connection portion, and the second electrode When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, More preferably, 90% or more of the solder portion in the connection portion is disposed in a portion where the electrode and the second electrode face each other. When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, It is particularly preferable that 95% or more of the solder portion in the connection portion is disposed at a portion where the electrode and the second electrode face each other.
  • connection portion When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, It is most preferable that 99% or more of the solder portion in the connection portion is disposed in a portion where the electrode and the second electrode face each other.
  • solder part in the connection part satisfies the above-described preferable aspect, the conduction reliability can be further improved.
  • connection structure 1 using the conductive material Next, an example of a method for manufacturing the connection structure 1 using the conductive material according to the embodiment of the present invention will be described.
  • the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
  • a conductive material 11 including a thermosetting component 11B and a plurality of conductive particles 11A is disposed on the surface of the first connection target member 2 (first Process).
  • the used conductive material 11 contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.
  • the conductive material 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided. After the arrangement of the conductive material 11, the conductive particles 11A are arranged both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
  • the arrangement method of the conductive material 11 is not particularly limited, and examples thereof include application by a dispenser, screen printing, and discharge by an inkjet device.
  • the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
  • the 2nd connection object member 3 is arrange
  • the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
  • the conductive material 11 is heated above the melting point of the conductive particles 11A (third step).
  • the conductive material 11 is heated above the curing temperature of the thermosetting component 11B (thermosetting compound).
  • the conductive particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect).
  • the conductive paste is used instead of the conductive film, the conductive particles 11A are more effectively collected between the first electrode 2a and the second electrode 3a.
  • the conductive particles 11A are melted and joined to each other.
  • the thermosetting component 11B is thermoset. As a result, as shown in FIG.
  • connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed of the conductive material 11.
  • the connection part 4 is formed of the conductive material 11
  • the solder part 4A is formed by joining the plurality of conductive particles 11A
  • the cured part 4B is formed by thermosetting the thermosetting component 11B. If the conductive particles 11A are sufficiently moved, the first electrode 2a and the second electrode 2a are moved after the movement of the conductive particles 11A that are not positioned between the first electrode 2a and the second electrode 3a starts. The temperature does not have to be kept constant until the movement of the conductive particles 11A between the electrodes 3a is completed.
  • the solder of the solder particles in the conductive particles 11A and the silver contained in the covering portion of the conductive particles 11A are not alloyed.
  • the conductive material 11 when the conductive material 11 is heated in the third step, the conductive material 11 may be heated to a temperature higher than the melting point of the solder particles, and the conductive particles 11A can be melted at a relatively low temperature.
  • the portion 4A can be formed.
  • the solder part 4A formed by joining a plurality of conductive particles 11A the solder of the solder particles in the conductive particles 11A and the silver contained in the covering part of the conductive particles 11A. Alloyed. For this reason, melting
  • the weight of the second connection target member 3 is added to the conductive material 11.
  • the conductive particles 11A are more effectively collected between the first electrode 2a and the second electrode 3a when the connection portion 4 is formed.
  • the conductive particles 11A try to gather between the first electrode 2a and the second electrode 3a. The tendency for the action to be inhibited increases.
  • the first electrode and the second electrode are overlapped. Even in a state where the alignment is shifted, the shift can be corrected and the first electrode and the second electrode can be connected (self-alignment effect). This is because the molten solder self-aggregating between the first electrode and the second electrode is in contact with the solder between the first electrode and the second electrode and the other components of the conductive material. This is because the area having the smallest area is more stable in terms of energy, and therefore the force to make the connection structure with alignment, which is the connection structure having the smallest area, works. At this time, it is desirable that the conductive material is not cured, and that the viscosity of components other than the conductive particles of the conductive material is sufficiently low at that temperature and time.
  • connection structure 1 shown in FIG. 1 is obtained.
  • the second step and the third step may be performed continuously.
  • the laminated body of the 1st connection object member 2, the electrically-conductive material 11, and the 2nd connection object member 3 which are obtained is moved to a heating part, and the said 3rd connection object is carried out.
  • You may perform a process.
  • the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
  • the heating temperature in the third step is preferably 140 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and even more preferably 200 ° C. or lower.
  • the heating method in the third step a method of heating the entire connection structure using a reflow furnace or an oven above the melting point of the conductive particles and the curing temperature of the thermosetting compound, or connecting The method of heating only the connection part of a structure locally is mentioned.
  • instruments used in the method of locally heating include a hot plate, a heat gun that applies hot air, a soldering iron, and an infrared heater.
  • the metal directly under the connection is made of a metal with high thermal conductivity, and other places where heating is not preferred are made of a material with low thermal conductivity such as a fluororesin.
  • the upper surface of the hot plate is preferably formed.
  • the first and second connection target members are not particularly limited. Specifically as said 1st, 2nd connection object member, electronic components, such as a semiconductor chip, a semiconductor package, LED chip, LED package, a capacitor
  • the first and second connection target members are preferably electronic components.
  • At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
  • the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for the connection of such connection target members, the solder in the conductive particles tends not to collect on the electrodes.
  • the solder in the conductive particles can be efficiently collected on the electrodes,
  • the conduction reliability can be sufficiently increased.
  • the conduction reliability between the electrodes by not applying pressure is improved. The improvement effect can be obtained more effectively.
  • the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode.
  • the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
  • the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
  • the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
  • the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
  • the trivalent metal element include Sn, Al, and Ga.
  • the first electrode and the second electrode are arranged in an area array or a peripheral.
  • the area array is a structure in which electrodes are arranged in a grid pattern on the surface on which the electrodes of the connection target members are arranged.
  • the peripheral is a structure in which electrodes are arranged on the outer periphery of a connection target member.
  • the solder in the conductive particles may be aggregated along the direction perpendicular to the comb, whereas in the area array or peripheral structure, the surface on which the electrodes are arranged In this case, it is necessary that the solder in the conductive particles uniformly aggregate on the entire surface. For this reason, in the conventional method, the amount of solder tends to be non-uniform, whereas in the method of the present invention, the solder in the conductive particles can be arranged more efficiently on the electrode, The solder in the conductive particles can be uniformly aggregated.
  • Thermosetting compound Thermosetting compound 1: Resorcinol type epoxy compound, “Epolite TDC-LC” manufactured by Kyoeisha Chemical Co., epoxy equivalent 120 g / eq
  • Thermosetting compound 2 Epoxy compound, “EP-3300” manufactured by ADEKA, epoxy equivalent 160 g / eq
  • Latent epoxy thermosetting agent 1 “Fujicure 7000” manufactured by T & K TOKA
  • Latent epoxy thermosetting agent 2 “HXA-3922HP” manufactured by Asahi Kasei E-Materials
  • Flux 1 “Glutaric acid” manufactured by Wako Pure Chemical Industries, Ltd.
  • Conductive particles 1 solder particles, melting point 139 ° C., using the solder particles selected from Mitsui Kinzoku “Sn42Bi58”, conductive particles having a coating portion formed by electroless plating, particle diameter: 31 ⁇ m, (Thickness: 0.5 ⁇ m)
  • Conductive particles with a coating formed by electroless plating 50 g of solder particles having a particle size of 30 ⁇ m were put in 500 g of a 1 wt% citric acid solution, and the oxide film on the surface of the solder particles was removed. A solution containing 5 g of silver nitrate and 1000 g of ion-exchanged water was prepared, and 50 g of solder particles from which the oxide film had been removed was added and mixed to obtain a suspension. To the obtained suspension, 30 g of thiomalic acid, 80 g of N-acetylimidazole and 10 g of sodium hypophosphite were added and mixed to obtain a plating solution. A coating portion was formed by electroless plating by adjusting the pH of the obtained plating solution to 9 using an ammonia solution of 10% by weight and performing electroless plating at 25 ° C. for 20 minutes. Conductive particles were obtained.
  • Conductive particles 2 (SnBi solder particles, melting point 139 ° C., using the solder particles selected from Mitsui Kinzoku “Sn42Bi58”, conductive particles having a metal part and a covering part formed by electroless plating, particle diameter: 33 ⁇ m, (Metal part thickness: 1 ⁇ m, coating part thickness: 0.5 ⁇ m)
  • Conductive particles having a metal part and a covering part formed by electroless plating 50 g of solder particles having a particle size of 30 ⁇ m were put in 500 g of a 1 wt% citric acid solution, and the oxide film on the surface of the solder particles was removed. Using 50 g of solder particles from which the oxide film had been removed, palladium was attached by a two-component activation method to obtain solder particles with palladium attached to the surface. A solution containing 20 g of nickel sulfate and 1000 g of ion-exchanged water was prepared, and 30 g of solder particles with palladium attached to the surface were mixed and mixed to obtain a first suspension.
  • first plating solution 30 g of citric acid, 80 g of sodium hypophosphite, and 10 g of acetic acid were added and mixed to obtain a first plating solution.
  • the pH of the obtained first plating solution is adjusted to 10 with an ammonia solution of 10% by weight, and electroless plating is performed at 60 ° C. for 20 minutes.
  • the formed conductive particles were obtained.
  • a solution containing 5 g of silver nitrate and 1000 g of ion-exchanged water was prepared, and 50 g of conductive particles having a metal part formed therein were mixed and mixed to obtain a second suspension.
  • the resulting second suspension was mixed with 30 g of succinimide, 80 g of N-acetylimidazole and 5 g of glyoxylic acid to obtain a second plating solution.
  • the pH of the obtained second plating solution to 9 using an ammonia solution of 10% by weight and performing electroless plating at 20 ° C. for 20 minutes, the metal part and The electroconductive particle in which the coating part was formed was obtained.
  • Conductive particles 3 (SnBi solder particles, melting point 139 ° C., solder particles selected from Mitsui Kinzoku Co., Ltd. “Sn42Bi58”, conductive particles having a coating part formed by electrolytic plating, particle diameter: 32 ⁇ m, coating part thickness : 1 ⁇ m)
  • Conductive particles having a coating formed by electrolytic plating 50 g of solder particles having a particle size of 30 ⁇ m were put in 500 g of a 1 wt% citric acid solution, and the oxide film on the surface of the solder particles was removed. A solution containing 5 g of silver nitrate, 1000 g of ion-exchanged water, 5 g of 1,3-dibromo-5,5-dimethylhydantoin, and 3 g of thiomalic acid was prepared, and 50 g of solder particles from which the oxide film had been removed were put in the solution. Mix to obtain a suspension. Conductivity in which a coating portion was formed by electrolytic plating by performing electrolytic plating under the conditions of anode: platinum, cathode: phosphorous copper, current density: 1 A / dm 2 using the obtained suspension. Particles were obtained.
  • Conductive particles 4 SAC particles, melting point 218 ° C., “M705” manufactured by Senju Metal Co., Ltd., particle diameter: 30 ⁇ m
  • Conductive particles 5 solder particles, melting point 139 ° C., solder particles selected from Mitsui Kinzoku Co., Ltd. “Sn42Bi58”, conductive particles having a coating portion formed by electrolytic plating, particle diameter: 35 ⁇ m, thickness of the coating portion : 2.5 ⁇ m
  • Conductive particles having a coating formed by electrolytic plating 50 g of solder particles having a particle size of 30 ⁇ m were put in 500 g of a 1 wt% citric acid solution, and the oxide film on the surface of the solder particles was removed. A solution containing 5 g of silver nitrate, 1000 g of ion-exchanged water, 5 g of 1,3-dibromo-5,5-dimethylhydantoin, and 3 g of thiomalic acid was prepared, and 50 g of solder particles from which the oxide film had been removed were put in the solution. Mix to obtain a suspension. Conductivity in which a coating portion was formed by electrolytic plating by performing electrolytic plating under the conditions of anode: platinum, cathode: phosphorous copper, current density: 3 A / dm 2 using the obtained suspension. Particles were obtained.
  • Conductive particles 6 solder particles, melting point 139 ° C., using solder particles selected from Mitsui Kinzoku “Sn42Bi58”, conductive particles having a coating portion formed by electrolytic plating, particle diameter: 33 ⁇ m, thickness of the coating portion : 1.5 ⁇ m
  • Conductive particles having a coating formed by electrolytic plating 50 g of solder particles having a particle size of 30 ⁇ m were put in 500 g of a 1 wt% citric acid solution, and the oxide film on the surface of the solder particles was removed. A solution containing 5 g of silver nitrate, 1000 g of ion-exchanged water, 5 g of 1,3-dibromo-5,5-dimethylhydantoin, and 3 g of thiomalic acid was prepared. 50 g of solder particles from which the oxide film has been removed were added to the solution and mixed to obtain a suspension. Conductivity in which a coating portion was formed by electrolytic plating by performing electrolytic plating under the conditions of anode: platinum, cathode: phosphorous copper, current density: 2 A / dm 2 using the obtained suspension. Particles were obtained.
  • Conductive particles 7 solder particles, melting point 139 ° C., using the solder particles selected from “L20-30050” manufactured by Senju Metal Co., Ltd., conductive particles having a coating portion formed by electroless plating, particle diameter: 31 ⁇ m, coating Part thickness: 0.08 ⁇ m
  • Conductive particles with a coating formed by electroless plating 50 g of solder particles having a particle size of 30 ⁇ m were placed in a solution containing 1 g of nitrilotriacetic acid and 50 g of 10 wt% sodium hydroxide, stirred at 50 ° C. for 5 minutes, and washed with water to remove the oxide film on the solder surface. . In a solution containing 2 g of palladium sulfate and 100 g of ion-exchanged water, 50 g of solder particles from which the oxide film had been removed was put, and palladium was adhered to the surface of the solder particles.
  • ion exchange water 10 g of ethylenediaminetetraacetic acid, 10 g of nitrilotriacetic acid, 30 g of sodium hydrogen phosphate, 30 g of sodium hydroxide, 3 g of silver nitrate, and 1 g of polyethylene glycol (polyethylene glycol 1000) are mixed.
  • a plating solution was obtained.
  • the resulting plating solution was adjusted to have a pH of 8 using a 10 wt% ammonia solution.
  • 50 g of solder particles to which palladium is attached and 6 g of sodium borohydride are placed in a plating solution, and electroless plating is performed at 25 ° C. for 20 minutes. Sex particles were obtained.
  • Conductive particles 8 (SnBi solder particles, melting point 139 ° C., solder particles selected from Senju Metal Co., Ltd. “L20-30050”, conductive particles having a coating formed by electroless plating, particle diameter: 31 ⁇ m, coating Part thickness: 0.12 ⁇ m)
  • Conductive particles with a coating formed by electroless plating 50 g of solder particles having a particle size of 30 ⁇ m were placed in a solution containing 1 g of nitrilotriacetic acid and 50 g of 10 wt% sodium hydroxide, stirred at 50 ° C. for 5 minutes, and washed with water to remove the oxide film on the solder surface. . In a solution containing 2 g of palladium sulfate and 100 g of ion-exchanged water, 50 g of solder particles from which the oxide film had been removed was put, and palladium was adhered to the surface of the solder particles.
  • ion-exchanged water 10 g of tetrasodium ethylenediaminetetraacetate, 10 g of disodium nitrilotriacetate, 30 g of sodium hydrogen phosphate, 30 g of sodium hydroxide, 7 g of silver methanesulfonate, and 1 g of polyethylene glycol (polyethylene glycol 1000) And mixed to obtain a plating solution.
  • the obtained plating solution was adjusted using a 10 wt% sulfuric acid solution so that the pH was 3. 50 g of solder particles to which palladium is attached and 6 g of oxalic acid are placed in a plating solution, and electroless plating is performed at 25 ° C. for 20 minutes, whereby conductive particles having a coating portion formed by electroless plating are obtained. Obtained.
  • Conductive particles 9 solder particles, melting point 139 ° C., using the solder particles selected from Senju Metal Co., Ltd. “L20-30050”, conductive particles with covering portions formed by electroless plating, particle diameter: 31 ⁇ m, covering Part thickness: 0.15 ⁇ m
  • Conductive particles with a coating formed by electroless plating 50 g of solder particles having a particle size of 30 ⁇ m were placed in a solution containing 1 g of nitrilotriacetic acid and 50 g of 10 wt% sodium hydroxide, stirred at 50 ° C. for 5 minutes, and washed with water to remove the oxide film on the solder surface. . In a solution containing 2 g of palladium sulfate and 100 g of ion-exchanged water, 50 g of solder particles from which the oxide film had been removed was put, and palladium was adhered to the surface of the solder particles.
  • ion-exchanged water 10 g of tetrasodium ethylenediaminetetraacetate, 10 g of disodium nitrilotriacetate, 30 g of sodium hydrogen phosphate, 30 g of sodium hydroxide, 7 g of silver methanesulfonate, and 1 g of polyethylene glycol (polyethylene glycol 1000) And mixed to obtain a plating solution.
  • the obtained plating solution was adjusted to have a pH of 7 using a 10 wt% sodium hydroxide solution.
  • 50 g of solder particles to which palladium is attached and 6 g of formic acid are put in a plating solution and electroless plating is performed at 40 ° C. for 20 minutes to obtain conductive particles having a coating portion formed by electroless plating. It was.
  • Metal part thickness and coating part thickness The thickness of the metal part and the thickness of the covering part were measured by the method described above.
  • Examples 1 to 8 and Comparative Example 1 (1) Production of conductive material The components shown in Table 1 below are blended in the blending amounts shown in Table 1 below, and the conductive material (anisotropic conductive paste) is mixed and defoamed with a planetary stirrer. Obtained.
  • connection structure area array substrate
  • connection structure under condition A As a second connection target member, a copper electrode of 250 ⁇ m at a pitch of 400 ⁇ m is arranged in an area array on the surface of a semiconductor chip body (size 5 ⁇ 5 mm, thickness 0.4 mm), and a passivation film ( A semiconductor chip on which polyimide, a thickness of 5 ⁇ m, and an opening diameter of the electrode portion of 200 ⁇ m were formed was prepared.
  • the number of copper electrodes is 10 ⁇ 10 in total per 100 semiconductor chips.
  • the same pattern is formed on the surface of the glass epoxy substrate body (size 20 ⁇ 20 mm, thickness 1.2 mm, material FR-4) with respect to the electrode of the second connection target member.
  • positioned was prepared.
  • the level difference between the surface of the copper electrode and the surface of the solder resist film is 15 ⁇ m, and the solder resist film protrudes from the copper electrode.
  • the conductive material (anisotropic conductive paste) immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 100 ⁇ m, thereby forming an anisotropic conductive paste layer.
  • a semiconductor chip was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other.
  • the weight of the semiconductor chip is added to the anisotropic conductive paste layer.
  • the anisotropic conductive paste layer was heated so that the temperature became 139 ° C. (melting point of solder) after 5 seconds from the start of temperature increase. Further, 15 seconds after the start of temperature increase, the anisotropic conductive paste layer was heated to 160 ° C. to cure the anisotropic conductive paste layer, thereby obtaining a connection structure. No pressure was applied during heating.
  • connection structure under condition B A connection structure (area array substrate) was produced in the same manner as in Condition A except that the following changes were made.
  • the viscosity ( ⁇ 25) at 25 ° C. of the conductive material (anisotropic conductive paste) immediately after production was measured using an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) under the conditions of 25 ° C. and 5 rpm. . ⁇ 25 was determined according to the following criteria.
  • ⁇ 25 is less than 20 Pa ⁇ s ⁇ : ⁇ 25 is 20 Pa ⁇ s or more and 600 Pa ⁇ s or less ⁇ : ⁇ 25 exceeds 600 Pa ⁇ s
  • Viscosity ( ⁇ mp) of conductive material (anisotropic conductive paste) at melting point of conductive particles Strain control 1 rad using STRESSTECH (manufactured by REOLOGICA) as the conductive material (anisotropic conductive paste) immediately after production. The measurement was performed under the conditions of a frequency of 1 Hz, a heating rate of 20 ° C./min, and a measurement temperature range of 40 ° C. to the melting point of the conductive particles. In this measurement, the viscosity at the melting point of the conductive particles was read and used as the viscosity ( ⁇ mp) of the conductive material (anisotropic conductive paste) at the melting point of the conductive particles. ⁇ mp was determined according to the following criteria.
  • ⁇ mp is less than 0.1 Pa ⁇ s ⁇ : ⁇ mp is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less ⁇ : ⁇ mp is more than 5 Pa ⁇ s
  • ⁇ : ⁇ 2 / ⁇ 1 is less than 2 ⁇ : ⁇ 2 / ⁇ 1 is 2 or more and less than 3 ⁇ : ⁇ 2 / ⁇ 1 is 3 or more
  • Solder wettability A conductive material (anisotropic conductive paste) was prepared after standing for 3 days at 25 ° C. and 50% humidity used in the evaluation of (3) above. Using these conductive materials (anisotropic conductive paste), the wettability of the solder was evaluated. Solder wettability was evaluated as follows. Solder wettability was determined according to the following criteria.
  • ⁇ The ratio of the solder wet area to the gold electrode is 70% or more.
  • ⁇ The ratio of the solder wet area to the gold electrode is 40% or more and less than 70%.
  • X The ratio of the solder wet area to the gold electrode is less than 40%.
  • solder placement accuracy on the electrode In the connection structure obtained under the conditions A and B, the first electrode and the second electrode in the stacking direction of the first electrode, the connection portion, and the second electrode.
  • the ratio X of the area where the solder portion in the connecting portion is arranged in the area of 100% of the portion facing the first electrode and the second electrode is evaluated.
  • the placement accuracy of the solder on the electrode was determined according to the following criteria.
  • Ratio X is 70% or more ⁇ : Ratio X is 60% or more and less than 70% ⁇ : Ratio X is 50% or more and less than 60% X: Ratio X is less than 50%
  • ⁇ Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇
  • Impact resistance The connection structure used for the evaluation of (6) above was prepared. These connection structures were dropped from a position having a height of 70 cm, and the impact resistance was evaluated by confirming the conduction reliability in the same manner as in the evaluation of (6) above. Impact resistance was determined according to the following criteria based on the rate of increase in resistance value from the average value of connection resistance obtained in the evaluation of (6) above.

Landscapes

  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Powder Metallurgy (AREA)

Abstract

L'invention concerne des particules conductrices qui peuvent être facilement montées à basses températures et qui peuvent améliorer efficacement la résistance aux chocs de parties de connexion. Les particules conductrices selon la présente invention comprennent : des particules de soudure ayant un point de fusion inférieur à 200 °C ; et des parties de revêtement qui sont disposées sur les surfaces des particules de soudure. Les parties de revêtement comprennent de l'argent.
PCT/JP2018/011068 2017-03-23 2018-03-20 Particules conductrices, matériau conducteur et structure de connexion WO2018174066A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018517647A JPWO2018174066A1 (ja) 2017-03-23 2018-03-20 導電性粒子、導電材料及び接続構造体
CN201880004430.7A CN109983544A (zh) 2017-03-23 2018-03-20 导电性粒子、导电材料以及连接结构体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-057631 2017-03-23
JP2017057631 2017-03-23

Publications (1)

Publication Number Publication Date
WO2018174066A1 true WO2018174066A1 (fr) 2018-09-27

Family

ID=63585554

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/011068 WO2018174066A1 (fr) 2017-03-23 2018-03-20 Particules conductrices, matériau conducteur et structure de connexion

Country Status (4)

Country Link
JP (1) JPWO2018174066A1 (fr)
CN (1) CN109983544A (fr)
TW (1) TW201839780A (fr)
WO (1) WO2018174066A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109782955A (zh) * 2019-01-22 2019-05-21 业成科技（成都）有限公司 曲面自对位接合装置及其方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111048499B (zh) * 2019-12-16 2022-05-13 业成科技（成都）有限公司 微发光二极管显示面板及其制备方法
KR102394475B1 (ko) * 2021-09-14 2022-05-04 마이크로컴퍼지트 주식회사 저융점 고신뢰성 솔더 입자, 이를 포함하는 수지 조성물

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001259884A (ja) * 2000-03-23 2001-09-25 Aiwa Co Ltd ペーストはんだ
JP2003027102A (ja) * 2001-07-06 2003-01-29 Mitsui Mining & Smelting Co Ltd 銀コート金属粉、銀コート金属粉の製造方法、その銀コート金属粉を用いた導電性ペースト、及びその導電性ペーストを用いて形成した導体を含んだプリント配線板
JP2007237271A (ja) * 2006-03-10 2007-09-20 Alps Electric Co Ltd 半田接着剤および半田接着剤を用いた電子部品実装構造
JP2008006499A (ja) * 2006-05-30 2008-01-17 Matsushita Electric Ind Co Ltd 半田ペースト
JP2008149365A (ja) * 2006-12-20 2008-07-03 Mitsubishi Materials Corp ハンダ粉末及びこの粉末を用いたハンダ用ペースト
WO2008132933A1 (fr) * 2007-04-13 2008-11-06 Sekisui Chemical Co., Ltd. Particules fines électroconductrices, matériau anisotrope électroconducteur et structure de connexion électroconductrice
JP2009283453A (ja) * 2008-04-23 2009-12-03 Panasonic Corp 導電性ペーストおよびこれを用いた実装構造体
JP2014069194A (ja) * 2012-09-27 2014-04-21 Asahi Kasei E-Materials Corp はんだペースト

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070115660A (ko) * 2006-05-30 2007-12-06 마쯔시다덴기산교 가부시키가이샤 솔더 페이스트
JP4364928B2 (ja) * 2007-04-13 2009-11-18 積水化学工業株式会社 導電性微粒子、異方性導電材料及び導電接続構造体
CN101836265B (zh) * 2007-10-22 2012-07-25 日本化学工业株式会社 包覆导电性粉体和使用该粉体的导电性粘合剂
TWI461252B (zh) * 2010-12-24 2014-11-21 Murata Manufacturing Co A bonding method, a bonding structure, an electronic device, an electronic device manufacturing method, and an electronic component
CN103692105A (zh) * 2012-09-27 2014-04-02 旭化成电子材料株式会社 焊料糊剂、半导体装置及其制造方法
JP5671512B2 (ja) * 2012-11-07 2015-02-18 タツタ電線株式会社 ボンディング用ワイヤ
KR101699256B1 (ko) * 2014-06-30 2017-01-24 엠케이전자 주식회사 솔더볼 및 이를 이용한 반도체 장치
JP6428408B2 (ja) * 2015-03-18 2018-11-28 三菱マテリアル株式会社 ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペーストの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001259884A (ja) * 2000-03-23 2001-09-25 Aiwa Co Ltd ペーストはんだ
JP2003027102A (ja) * 2001-07-06 2003-01-29 Mitsui Mining & Smelting Co Ltd 銀コート金属粉、銀コート金属粉の製造方法、その銀コート金属粉を用いた導電性ペースト、及びその導電性ペーストを用いて形成した導体を含んだプリント配線板
JP2007237271A (ja) * 2006-03-10 2007-09-20 Alps Electric Co Ltd 半田接着剤および半田接着剤を用いた電子部品実装構造
JP2008006499A (ja) * 2006-05-30 2008-01-17 Matsushita Electric Ind Co Ltd 半田ペースト
JP2008149365A (ja) * 2006-12-20 2008-07-03 Mitsubishi Materials Corp ハンダ粉末及びこの粉末を用いたハンダ用ペースト
WO2008132933A1 (fr) * 2007-04-13 2008-11-06 Sekisui Chemical Co., Ltd. Particules fines électroconductrices, matériau anisotrope électroconducteur et structure de connexion électroconductrice
JP2009283453A (ja) * 2008-04-23 2009-12-03 Panasonic Corp 導電性ペーストおよびこれを用いた実装構造体
JP2014069194A (ja) * 2012-09-27 2014-04-21 Asahi Kasei E-Materials Corp はんだペースト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109782955A (zh) * 2019-01-22 2019-05-21 业成科技（成都）有限公司 曲面自对位接合装置及其方法

Also Published As

Publication number Publication date
JPWO2018174066A1 (ja) 2020-01-23
CN109983544A (zh) 2019-07-05
TW201839780A (zh) 2018-11-01

Similar Documents

Publication Publication Date Title
WO2016043265A1 (fr) Pate electriquement conductrice, structure assemblee et procede de fabrication d'une structure assemblee
JP5966102B1 (ja) 導電ペースト、接続構造体及び接続構造体の製造方法
JP5966101B1 (ja) 導電ペースト、接続構造体及び接続構造体の製造方法
JP6592350B2 (ja) 異方性導電材料、接続構造体及び接続構造体の製造方法
WO2018174066A1 (fr) Particules conductrices, matériau conducteur et structure de connexion
JP2016126878A (ja) 導電ペースト、接続構造体及び接続構造体の製造方法
JP6085031B2 (ja) 接続構造体の製造方法
JP6600234B2 (ja) 導電材料及び接続構造体
JP2016126877A (ja) 導電ペースト、接続構造体及び接続構造体の製造方法
JP2019160788A (ja) 導電材料、接続構造体及び接続構造体の製造方法
JP2019131634A (ja) 硬化性材料、接続構造体及び接続構造体の製造方法
WO2019181836A1 (fr) Particules électroconductrices, matériau électroconducteur et structure de connexion
WO2018174065A1 (fr) Matériau conducteur et structure de connexion
JP6166849B2 (ja) 導電材料及び接続構造体
JP6514615B2 (ja) 接続構造体の製造方法
JP2019188472A (ja) 導電性粒子、導電材料及び接続構造体
JP6514610B2 (ja) 接続構造体の製造方法
JP2016062768A (ja) 接続構造体の製造方法及び接続構造体
JP6514614B2 (ja) 接続構造体の製造方法及び接続構造体
JP2019175844A (ja) 導電材料、接続構造体及び接続構造体の製造方法
WO2016035637A1 (fr) Procédé de fabrication de structure de connexion
JP2019212467A (ja) 導電材料、接続構造体及び接続構造体の製造方法
JP6533427B2 (ja) 導電材料及び接続構造体
JP2017022099A (ja) 導電材料及び接続構造体
JP2016126876A (ja) 導電材料、接続構造体及び接続構造体の製造方法

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2018517647

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18772343

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18772343

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载