+

WO2018169280A1 - Device and method for forming electromagnetic shielding film of semiconductor chip - Google Patents

Device and method for forming electromagnetic shielding film of semiconductor chip Download PDF

Info

Publication number
WO2018169280A1
WO2018169280A1 PCT/KR2018/002930 KR2018002930W WO2018169280A1 WO 2018169280 A1 WO2018169280 A1 WO 2018169280A1 KR 2018002930 W KR2018002930 W KR 2018002930W WO 2018169280 A1 WO2018169280 A1 WO 2018169280A1
Authority
WO
WIPO (PCT)
Prior art keywords
shielding film
semiconductor chip
film composition
conveyor
electromagnetic shielding
Prior art date
Application number
PCT/KR2018/002930
Other languages
French (fr)
Korean (ko)
Inventor
정광춘
성준기
김민희
한미경
Original Assignee
(주)잉크테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)잉크테크 filed Critical (주)잉크테크
Publication of WO2018169280A1 publication Critical patent/WO2018169280A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/76151—Means for direct writing
    • H01L2224/76155—Jetting means, e.g. ink jet

Definitions

  • the present invention relates to an electromagnetic wave shielding film forming apparatus and method of a semiconductor chip, and more particularly to an electromagnetic wave shielding film forming apparatus and method of a semiconductor chip capable of uniformly forming an electromagnetic wave shielding film through a relatively simple process.
  • a method of forming an electromagnetic shielding film around the semiconductor and in contact with the grounding means is used.
  • a sputtering method or a spray coating method has been used to form the electromagnetic shielding film.
  • the sputtering method is made in a vacuum atmosphere, expensive equipment is required, and the spray coating method has a problem that it is not easy to uniformly form the thickness of the electromagnetic shielding film.
  • an object of the present invention is to solve such a conventional problem, and to provide an electromagnetic wave shielding film forming apparatus and method for forming an electromagnetic wave shielding film of a semiconductor chip through a simple and economic means.
  • the object is, according to the present invention, a conveyor in which a semiconductor chip is placed on the upper surface; A first spray head for applying an electromagnetic shielding film composition to a top surface of the semiconductor chip on the conveyor from the top of the conveyor by a jet spray method; A second spray head for applying an electromagnetic shielding film composition to a side of a semiconductor chip placed on an upper surface of the conveyor at an upper portion of the conveyor; And a curing device for curing the electromagnetic wave shielding film composition applied to the surface of the semiconductor chip placed on the upper surface of the conveyor at the upper part of the conveyor.
  • the second spray head may be disposed to be inclined with an upper surface of the conveyor.
  • the conveyor may include a turning part having an upper surface inclined, and the second spray head may be disposed in a tangential direction of the turning part.
  • the second spray head may apply the electromagnetic shielding film composition by a jet spray method or a spray spray method.
  • the second injection head may be formed to face each side of the semiconductor chip, or may be formed to face two opposite side edges of the semiconductor chip.
  • the preliminary curing machine further comprises a preliminary curing machine for preliminarily curing the electromagnetic shielding film composition applied to the surface of the semiconductor chip placed on the conveyor between the first spray head and the second spray head.
  • the conveyor has adhesiveness.
  • the top coating step of applying the electromagnetic wave shielding film composition containing conductive particles on the upper surface of the semiconductor chip by a jet spray method A side coating step of applying an electromagnetic shielding film composition including conductive particles to a side of the semiconductor chip; And a curing step of curing the electromagnetic wave shielding film composition applied to the surface of the semiconductor chip.
  • the surface treatment step of treating the surface of the semiconductor chip with plasma further proceeds.
  • a preliminary curing step of preliminarily curing the electromagnetic shielding film composition applied to the upper surface of the semiconductor chip is preferable.
  • the electromagnetic shielding film composition may be applied to a portion of the top surface of the semiconductor chip, and in the side coating step, the electromagnetic shielding film composition may be applied to a portion of the side surface of the semiconductor chip.
  • the electromagnetic wave shielding film forming apparatus of the semiconductor chip according to the present invention has a simple configuration, it is possible to form an electromagnetic shielding film of excellent performance for a semiconductor chip.
  • the electromagnetic wave shielding film forming apparatus also facilitates the operation of forming the electromagnetic wave shielding film.
  • FIG. 1 is an explanatory diagram of an electromagnetic wave shielding film forming apparatus of a semiconductor chip according to the present invention
  • FIG. 2 is an explanatory diagram of a case in which the conveyor of the electromagnetic wave shielding film forming apparatus includes a redirection portion;
  • FIG. 3 is an explanatory diagram of a second spray head arrangement method of the electromagnetic wave shielding film forming apparatus
  • FIG. 4 is a flowchart of a method for forming an electromagnetic wave shielding film of a semiconductor chip according to the present invention.
  • the electromagnetic wave shielding film forming apparatus 1 of the semiconductor chip according to the present invention includes a conveyor 10, a first spray head 20, a second spray head 30, and a curing machine 40.
  • 1 is an explanatory diagram of an electromagnetic wave shielding film forming apparatus 1 of the present invention.
  • a step of coating the upper surface 2a of the semiconductor chip 2, the step of coating the side surface 2b of the semiconductor chip 2, and the semiconductor chip 2 ) To form an electromagnetic shielding film on the semiconductor chip (2) by curing the electromagnetic shielding film composition coated on the surface.
  • the conveyor 10 is a semiconductor chip 2 is placed on the upper surface, the semiconductor chip 2 is moved so that the semiconductor chip 2 can go through each process of forming the electromagnetic shielding film.
  • the first spray heads 20 are disposed at intervals above the conveyor 10 and serve to apply the electromagnetic shielding film composition to the upper surface 2a of the semiconductor chip 2 placed on the upper surface of the conveyor 10.
  • the electric wave shielding film composition should be able to block the influence of electromagnetic waves on the semiconductor chip 2 by the method of grounding, so that it is a metal ink containing conductive particles such as copper, iron, silver, gold, aluminum, nickel or zinc. It may be a particleless type metal ink.
  • the electromagnetic shielding film composition may be a solvent, a stabilizer, a dispersant, a binder resin, a crosslinking agent, a reducing agent, a surfactant, a wetting agent, a thixotropic agent, or a leveling agent, as necessary. And additives such as thickeners and antifoams.
  • the first injection head 20 applies the electromagnetic shielding film composition by a jet spray method.
  • the jet spraying method allows the liquid material to be injected at the correct position in the correct amount. Therefore, when applying the electromagnetic shielding film composition by the jet spraying method, it is possible to precisely control the thickness and the application position of the electromagnetic shielding film composition. Do.
  • the viscosity of the electromagnetic shielding film composition may be 1 to 50,000 cPs, more preferably 5 to 400 cPs.
  • the surface tension may be up to 35 dyn / cm, more preferably 30 dyn / cm or less.
  • the temperature of the 1st injection head 20 is 1-50 degreeC, More preferably, it is 25-35 degreeC, and raises the stability of spraying an electromagnetic wave shielding film composition.
  • the second spray head 30 is disposed at an upper portion of the conveyor 10 at intervals, and is disposed on the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10.
  • An electromagnetic wave shielding film composition is apply
  • the second spray head 30 may apply the electromagnetic shielding film composition by a jet spray method or a spray spray method.
  • coating an electromagnetic wave shielding film composition by a jet spray system as mentioned above, the thickness and application
  • the viscosity of the electromagnetic shielding film composition is too low, the flowability of the electromagnetic shielding film composition may increase, and thus it may be difficult to form a uniform electromagnetic shielding film on the side of the semiconductor chip. Thus, the electromagnetic shielding film composition sprayed onto the second spray head 30 may be too low. Do not have a viscosity.
  • the curing machine 40 is positioned above the conveyor 10, and cures by heating the liquid electromagnetic wave shielding film composition applied to the upper surface 2a and the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10. . Accordingly, it is possible to prevent the electromagnetic wave shielding film composition from flowing on the surface of the semiconductor chip 2 and to shorten the time required to form the electromagnetic wave shielding film.
  • the work by the curing machine 40 is preferably made for 4 to 6 minutes at a temperature of 140 ⁇ 160 °C.
  • the second injection head 30 may be disposed to be inclined with the top surface of the conveyor 10.
  • the second spray head 30 may also be inclined with the side surface 2b of the semiconductor chip 2 that is vertically placed to easily apply the electromagnetic shielding film composition to the side surface 2b of the semiconductor chip 2.
  • the second spray head 30 may apply the electromagnetic shielding film composition in a direction perpendicular to the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10. That is, as shown in FIG. 2, a part of the upper surface of the conveyor 10 is formed to be inclined by providing a turning part 11 formed while some sections of the conveyor 10 move along the outer circumferential surface of the roller.
  • the electromagnetic wave shielding film composition can be directly applied to the side surface 2b of the semiconductor chip 2 by arranging the second injection head 30 in the tangential direction of the direction changing part 11.
  • the electromagnetic shielding film composition applied in a direction perpendicular to the side surface 2b of the semiconductor chip 2 can easily adjust the thickness and the position to be applied.
  • the second spray head 30 and the upper surface of the conveyor 10 interfere with each other.
  • the conveyor 10 includes the turning part 11, the turning part (even if the second spray head 30 is arranged in a direction perpendicular to the side surface 2b of the semiconductor chip 2) 11)
  • the upper surface of the conveyor 10 and the second spray head 30 do not interfere with the inclination of the portion.
  • Conveyor 10 may be adhesive.
  • the electromagnetic wave shielding film composition when the electromagnetic wave shielding film composition is applied to the semiconductor chip 2 with the first injection head 20 or the second injection head 30, the position of the semiconductor chip 2 on the conveyor 10 can be prevented from changing. It is possible to increase the accuracy of the coating, and in particular, it is possible to prevent the semiconductor chip 2 from being separated from the turning part 11 having an inclination.
  • the second injection head 30 may be formed to face each side 2b of the semiconductor chip 2, as shown in FIG.
  • FIG. 3A is a view of the semiconductor chip 2 from above.
  • the second injection head 30 is formed to face each side 2b of the semiconductor chip 2 and is formed on each side 2b of the semiconductor chip 2. Applying the electromagnetic wave shielding film composition in a right angle direction can easily adjust the application position and thickness in all the side surfaces 2b of the semiconductor chip 2, and can shorten the application time.
  • the second spray head 30 may be formed to face two side edges 2c of the semiconductor chip 2, as shown in FIG.
  • the electromagnetic wave shielding film composition is applied to the side surface 2b of the semiconductor chip 2 in an inclined direction so that the electromagnetic wave shielding film composition is a semiconductor chip ( Since it spreads widely on the side surface 2b of 2), it is preferable to apply the electromagnetic shielding film composition several times as compared to the case where the second injection head 30 is formed to face each side surface 2b of the semiconductor chip 2. .
  • the preliminary curing machine 50 may be further provided between the first spray head 20 and the second spray head 30.
  • the preliminary curing machine 50 serves to precure the electromagnetic wave shielding film composition applied to the upper surface 2a of the semiconductor chip 2 via the first spray head 20.
  • the preliminary curing machine 50 is composed of a heater to heat-cure the electromagnetic wave shielding film composition or UV (ultraviolet (UV)) irradiator may be cured the electromagnetic wave shielding film composition.
  • UV ultraviolet
  • the semiconductor chip side surface is caused by the flow of the electromagnetic shielding film composition applied to the upper surface 2a of the semiconductor chip 2.
  • the electromagnetic wave shielding film thickness of (2b) can be prevented from becoming homogeneous.
  • the preliminary curing machine 50 cures the electromagnetic wave shielding film composition at a lower temperature or a shorter time than the curing device 40.
  • the electromagnetic wave shielding film forming method of the semiconductor chip according to the present invention largely comprises a top coating step (S20), a side coating step (S40) and a curing step (S50).
  • the electromagnetic wave shielding film composition including the conductive particles is coated on the top surface 2a of the semiconductor chip 2 using the first spray head 20. Since the first spray head 20 coats the electromagnetic wave shielding film composition by a jet spray method, it is possible to precisely adjust the coating thickness and position.
  • an electromagnetic shielding film composition is applied to the side surface 2b of the semiconductor chip 2.
  • the second injection head 30 applies the electromagnetic shielding film composition by a jet spray method or a spray spray method.
  • the electromagnetic shielding film composition applied to the surface of the semiconductor chip 2 is cured.
  • the electromagnetic wave shielding film formation method of the semiconductor chip 2 according to the present invention since the electromagnetic wave shielding film having a uniform thickness can be formed through the device of a simple configuration, it is necessary to manufacture the semiconductor chip 2 of excellent performance It is possible to shorten the time required for forming the electromagnetic wave shielding film.
  • the surface treatment step S10 may be further performed.
  • the surface treatment step S10 the surface of the semiconductor chip 2 is treated with plasma. Accordingly, the adhesion of the electromagnetic shielding film composition to the surface of the semiconductor chip 2 is increased in the top coating step (S20) and the side coating step (S40).
  • the preliminary curing step S30 may be further performed between the top coating step S20 and the side coating step S40.
  • the electromagnetic wave shielding film composition applied to the upper surface of the semiconductor chip 2a is preliminarily cured, and the electromagnetic wave shielding film composition of the upper surface of the semiconductor chip 2a flows to influence the formation of the electromagnetic wave shielding film of the semiconductor chip side surface 2b. You can prevent giving.
  • the electromagnetic wave shielding film composition may be cured by heat or UV (Ultra Violet).
  • the electromagnetic shielding film composition may be applied to a part of the upper surface 2a of the semiconductor chip, and in the side coating step S40, the electromagnetic shielding film composition may be applied to the part of the side surface 2b of the semiconductor chip.
  • the electromagnetic shielding film is intended to block the influence of electromagnetic waves on the semiconductor chip by grounding, so it is not necessary to coat the entire semiconductor chip with the electromagnetic shielding film. Therefore, by forming the electromagnetic shielding film only on a part of the surface of the semiconductor chip, it is possible to reduce the time and cost required to form the electromagnetic shielding film while blocking the electromagnetic wave from the semiconductor chip.
  • the electromagnetic shielding film composition is applied only to a part of the semiconductor chip surface, the electromagnetic shielding film composition of the semiconductor chip upper surface 2a and the electromagnetic shielding film composition of the semiconductor chip side surface 2b should be connected to each other.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The present invention relates to a device and a method for forming an electromagnetic shielding film of a semiconductor chip. A method for forming an electromagnetic shielding film of a semiconductor chip according to the present invention is characterized by comprising: an upper surface coating step of applying an electromagnetic shielding film composition comprising conductive particles to the upper surface of a semiconductor chip in a jet spraying type; a side surface coating step of applying the electromagnetic shielding film composition comprising conductive particles to a side surface of the semiconductor chip; and a curing step of curing the electromagnetic shielding film composition applied to the surface of the semiconductor chip. Accordingly, it is possible to form an electromagnetic shielding film of a semiconductor chip having an excellent performance through a simple and economical means.

Description

반도체 칩의 전자파 차폐막 형성 장치 및 방법Apparatus and method for forming electromagnetic wave shielding film of semiconductor chip
본 발명은 반도체 칩의 전자파 차폐막 형성 장치 및 방법에 관한 것으로서, 보다 상세하게는 비교적 단순한 공정을 통해 전자파 차폐막을 균일하게 형성하는 것이 가능한 반도체 칩의 전자파 차폐막 형성 장치 및 방법에 관한 것이다.The present invention relates to an electromagnetic wave shielding film forming apparatus and method of a semiconductor chip, and more particularly to an electromagnetic wave shielding film forming apparatus and method of a semiconductor chip capable of uniformly forming an electromagnetic wave shielding film through a relatively simple process.
반도체 칩은 소형화 및 고집적화되는 추세로 계속해서 발전하고 있으며, 이에 따라 집적된 전자기기 부품들 간의 전자파 간섭(EMI; Electro Magnetic Interference)을 제거해줄 필요가 있다.As semiconductor chips continue to develop as miniaturization and high integration, there is a need to remove electromagnetic interference (EMI) between integrated electronic components.
반도체 칩에 대한 전자파 간섭을 제거하기 위하여 반도체를 감싸며 접지수단에 접하도록 전자파 차폐막을 형성하는 방법이 사용된다. 기존에는 전자파 차폐막을 형성하기 위하여 스퍼터링(sputtering) 공법 또는 스프레이 코팅(spray coating) 공법이 사용되었다.In order to eliminate electromagnetic interference on the semiconductor chip, a method of forming an electromagnetic shielding film around the semiconductor and in contact with the grounding means is used. Conventionally, a sputtering method or a spray coating method has been used to form the electromagnetic shielding film.
그러나 스퍼터링 공법은 진공 분위기에서 이루어지기 때문에 고가의 장비가 필요하며, 스프레이 코팅 공법은 전자파 차폐막의 두께를 균일하게 형성하는 것이 쉽지 않은 문제점을 갖는다.However, since the sputtering method is made in a vacuum atmosphere, expensive equipment is required, and the spray coating method has a problem that it is not easy to uniformly form the thickness of the electromagnetic shielding film.
따라서, 본 발명의 목적은 이와 같은 종래의 문제점을 해결하기 위한 것으로서, 간단하고 경제적인 수단을 통해 반도체 칩의 전자파 차폐막을 형성하는 것이 가능한 반도체 칩의 전자파 차폐막 형성 장치 및 방법을 제공함에 있다.Accordingly, an object of the present invention is to solve such a conventional problem, and to provide an electromagnetic wave shielding film forming apparatus and method for forming an electromagnetic wave shielding film of a semiconductor chip through a simple and economic means.
또한, 우수한 성능의 전자파 차폐막을 형성하는 것이 가능한 반도체 칩의 전자파 차폐막 형성 장치 및 방법을 제공하고자 한다.It is also an object of the present invention to provide an electromagnetic wave shielding film forming apparatus and method for a semiconductor chip capable of forming an electromagnetic wave shielding film having excellent performance.
상기 목적은, 본 발명에 따라, 상면에 반도체 칩이 놓여지는 컨베이어; 상기 컨베이어의 상부에서 상기 컨베이어 상면에 놓여진 반도체 칩의 상면에 전자파 차폐막 조성물을 제트 분사 방식으로 도포하는 제1분사 헤드; 상기 컨베이어의 상부에서 컨베이어 상면에 놓여진 반도체 칩의 측면에 전자파 차폐막 조성물을 도포하는 제2분사 헤드; 및 상기 컨베이어의 상부에서 상기 컨베이어 상면에 놓여진 반도체 칩 표면에 도포된 전자파 차폐막 조성물을 경화시키는 경화기;를 포함하여 이루어지는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치에 의해 달성된다.The object is, according to the present invention, a conveyor in which a semiconductor chip is placed on the upper surface; A first spray head for applying an electromagnetic shielding film composition to a top surface of the semiconductor chip on the conveyor from the top of the conveyor by a jet spray method; A second spray head for applying an electromagnetic shielding film composition to a side of a semiconductor chip placed on an upper surface of the conveyor at an upper portion of the conveyor; And a curing device for curing the electromagnetic wave shielding film composition applied to the surface of the semiconductor chip placed on the upper surface of the conveyor at the upper part of the conveyor.
상기 제2분사 헤드는 상기 컨베이어의 상면과 경사를 이루도록 배치될 수 있다.The second spray head may be disposed to be inclined with an upper surface of the conveyor.
상기 컨베이어는 상면이 경사지게 형성되는 방향전환부를 구비하고, 상기 제2분사 헤드는 상기 방향전환부의 접선방향으로 배치될 수 있다.The conveyor may include a turning part having an upper surface inclined, and the second spray head may be disposed in a tangential direction of the turning part.
상기 제2분사 헤드는 제트 분사 방식 또는 스프레이 분사 방식으로 전자파 차폐막 조성물을 도포할 수 있다.The second spray head may apply the electromagnetic shielding film composition by a jet spray method or a spray spray method.
상기 제2분사 헤드는 반도체 칩의 각 측면을 향하도록 형성되거나, 반도체 칩의 마주보는 두 측방 모서리를 향하도록 형성될 수 있다.The second injection head may be formed to face each side of the semiconductor chip, or may be formed to face two opposite side edges of the semiconductor chip.
상기 제1분사 헤드와 제2분사 헤드 사이에는, 컨베이어 상면에 놓여진 반도체 칩 표면에 도포된 전자파 차폐막 조성물을 예비 경화시키는 예비 경화기를 더 포함하는 것이 바람직하다.It is preferable that the preliminary curing machine further comprises a preliminary curing machine for preliminarily curing the electromagnetic shielding film composition applied to the surface of the semiconductor chip placed on the conveyor between the first spray head and the second spray head.
상기 컨베이어는 접착성을 가지는 것이 바람직하다.It is preferable that the conveyor has adhesiveness.
상기 목적은, 본 발명에 따라, 반도체 칩의 상면에 전도성 입자를 포함하는 전자파 차폐막 조성물을 제트 분사 방식으로 도포하는 상면 코팅 단계; 반도체 칩의 측면에 전도성 입자를 포함하는 전자파 차폐막 조성물을 도포하는 하는 측면 코팅 단계; 및 반도체 칩 표면에 도포된 전자파 차폐막 조성물을 경화시키는 경화 단계;를 포함하여 이루어지는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 방법에 의해 달성된다.The above object, according to the present invention, the top coating step of applying the electromagnetic wave shielding film composition containing conductive particles on the upper surface of the semiconductor chip by a jet spray method; A side coating step of applying an electromagnetic shielding film composition including conductive particles to a side of the semiconductor chip; And a curing step of curing the electromagnetic wave shielding film composition applied to the surface of the semiconductor chip.
상기 상면 코팅 단계 전에는, 반도체 칩의 표면을 플라즈마로 처리하는 표면 처리 단계가 더 진행되는 것이 바람직하다.Prior to the top coating step, it is preferable that the surface treatment step of treating the surface of the semiconductor chip with plasma further proceeds.
상기 상면 코팅 단계와 상기 측면 코팅 단계 사이에는, 반도체 칩 상면에 도포된 전자파 차폐막 조성물을 예비 경화시키는 예비 경화 단계가 더 진행되는 것이 바람직하다.Between the top coating step and the side coating step, it is preferable that a preliminary curing step of preliminarily curing the electromagnetic shielding film composition applied to the upper surface of the semiconductor chip.
상기 상면 코팅 단계에서는 반도체 칩의 상면 일부에 전자파 차폐막 조성물을 도포하고, 상기 측면 코팅 단계에서는 반도체 칩의 측면 일부에 전자파 차폐막 조성물을 도포할 수 있다.In the top coating step, the electromagnetic shielding film composition may be applied to a portion of the top surface of the semiconductor chip, and in the side coating step, the electromagnetic shielding film composition may be applied to a portion of the side surface of the semiconductor chip.
본 발명에 의한 반도체 칩의 전자파 차폐막 형성 장치는 간단한 구성을 가짐에도 불구하고 반도체 칩을 위한 우수한 성능의 전자파 차폐막 형성할 수 있다.Although the electromagnetic wave shielding film forming apparatus of the semiconductor chip according to the present invention has a simple configuration, it is possible to form an electromagnetic shielding film of excellent performance for a semiconductor chip.
상기 전자파 차폐막 형성 장치는 또한 전자파 차폐막의 형성 작업을 용이하게 한다.The electromagnetic wave shielding film forming apparatus also facilitates the operation of forming the electromagnetic wave shielding film.
도 1은 본 발명에 의한 반도체 칩의 전자파 차폐막 형성 장치에 관한 설명도,1 is an explanatory diagram of an electromagnetic wave shielding film forming apparatus of a semiconductor chip according to the present invention;
도 2는 상기 전자파 차폐막 형성 장치의 컨베이어가 방향전환부를 구비하는 경우에 관한 설명도,2 is an explanatory diagram of a case in which the conveyor of the electromagnetic wave shielding film forming apparatus includes a redirection portion;
도 3은 상기 전자파 차폐막 형성 장치의 제2분사 헤드 배치방법에 관한 설명도, 3 is an explanatory diagram of a second spray head arrangement method of the electromagnetic wave shielding film forming apparatus;
도 4는 본 발명에 의한 반도체 칩의 전자파 차폐막 형성 방법의 순서도이다.4 is a flowchart of a method for forming an electromagnetic wave shielding film of a semiconductor chip according to the present invention.
이하에서는 본 발명의 구체적인 실시예에 대하여 도면을 참고하여 자세하게 설명하도록 한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 의한 반도체 칩의 전자파 차폐막 형성 장치(1)는 컨베이어(10), 제1분사 헤드(20), 제2분사 헤드(30) 및 경화기(40)를 포함하여 이루어진다. 도 1에는 본 발명의 전자파 차폐막 형성 장치(1)에 관한 설명도가 도시되어 있다.The electromagnetic wave shielding film forming apparatus 1 of the semiconductor chip according to the present invention includes a conveyor 10, a first spray head 20, a second spray head 30, and a curing machine 40. 1 is an explanatory diagram of an electromagnetic wave shielding film forming apparatus 1 of the present invention.
본 발명에 의한 전자파 차폐막 형성 장치(1)는 개략적으로, 반도체 칩(2)의 상면(2a)을 코팅하는 단계, 반도체 칩(2)의 측면(2b)을 코팅하는 단계, 및 반도체 칩(2) 표면에 코팅된 전자파 차폐막 조성물을 경화시키는 단계를 통해 반도체 칩(2)에 전자파 차폐막을 형성한다.In the electromagnetic wave shielding film forming apparatus 1 according to the present invention, a step of coating the upper surface 2a of the semiconductor chip 2, the step of coating the side surface 2b of the semiconductor chip 2, and the semiconductor chip 2 ) To form an electromagnetic shielding film on the semiconductor chip (2) by curing the electromagnetic shielding film composition coated on the surface.
상기 컨베이어(10)는 그 상면에 반도체 칩(2)이 놓여지는 것으로, 반도체 칩(2)을 이동시켜 반도체 칩(2)이 전자파 차폐막 형성의 각 과정들을 거칠 수 있도록 한다.The conveyor 10 is a semiconductor chip 2 is placed on the upper surface, the semiconductor chip 2 is moved so that the semiconductor chip 2 can go through each process of forming the electromagnetic shielding film.
제1분사 헤드(20)는 컨베이어(10)의 상부로 간격을 두고 배치되며, 컨베이어(10)의 상면에 놓여진 반도체 칩(2)의 상면(2a)에 전자파 차폐막 조성물을 도포하는 역할을 한다.The first spray heads 20 are disposed at intervals above the conveyor 10 and serve to apply the electromagnetic shielding film composition to the upper surface 2a of the semiconductor chip 2 placed on the upper surface of the conveyor 10.
참고로, 전차파 차폐막 조성물은 접지의 방법으로 반도체 칩(2)에 대한 전자파의 영향을 차단할 수 있어야 하므로 구리, 철, 은, 금, 알루미늄, 니켈 또는 아연과 같은 전도성 입자를 포함하는 금속 잉크이거나 무입자 타입의 금속 잉크일 수 있다.For reference, the electric wave shielding film composition should be able to block the influence of electromagnetic waves on the semiconductor chip 2 by the method of grounding, so that it is a metal ink containing conductive particles such as copper, iron, silver, gold, aluminum, nickel or zinc. It may be a particleless type metal ink.
전자파 차폐막 조성물은 필요에 따라, 용매, 안정제, 분산제, 바인더 수지(binder resin), 가교제, 환원제, 계면활성제(surfactant), 습윤제(wetting agent), 칙소제(thixotropic agent) 또는 레벨링제(leveling agent), 증점제, 소포제 등의 첨가제를 포함할 수 있다.The electromagnetic shielding film composition may be a solvent, a stabilizer, a dispersant, a binder resin, a crosslinking agent, a reducing agent, a surfactant, a wetting agent, a thixotropic agent, or a leveling agent, as necessary. And additives such as thickeners and antifoams.
제1분사 헤드(20)는 제트 분사 방식으로 전자파 차폐막 조성물을 도포한다. 제트 분사 방식에 의해서는 액상 물질을 정확한 위치에 정확한 양만큼을 분사시킬 수 있기 때문에 제트 분사 방식에 의해 전자파 차폐막 조성물을 도포하는 경우 전자파 차폐막 조성물이 도포되는 두께와 도포 위치를 정밀하게 제어하는 것이 가능하다.The first injection head 20 applies the electromagnetic shielding film composition by a jet spray method. The jet spraying method allows the liquid material to be injected at the correct position in the correct amount. Therefore, when applying the electromagnetic shielding film composition by the jet spraying method, it is possible to precisely control the thickness and the application position of the electromagnetic shielding film composition. Do.
전자파 차폐막 조성물의 점도가 너무 낮거나 높은 경우, 또는 표면장력이 너무 높은 경우에는 제1분사 헤드(20)에서 필요로 하는 요변성(搖變性)을 만족시키지 못해 안정적인 분사가 어려울 수 있다. 따라서, 전자파 차폐막 조성물의 점도는 1 ~ 50,000 cPs 일 수 있으며, 보다 바람직하게는 5 ~ 400 cPs 일 수 있다. 그리고 표면장력은 최대 35 dyn/cm 일 수 있으며, 보다 바람직하게는 30 dyn/cm 이하일 수 있다.When the viscosity of the electromagnetic wave shielding film composition is too low or high, or when the surface tension is too high, it may not be able to satisfy the thixotropy required by the first injection head 20, and thus, it may be difficult to spray stably. Therefore, the viscosity of the electromagnetic shielding film composition may be 1 to 50,000 cPs, more preferably 5 to 400 cPs. And the surface tension may be up to 35 dyn / cm, more preferably 30 dyn / cm or less.
제1분사 헤드(20)의 온도는 1 ~ 50 ℃, 보다 바람직하게는 25 ~ 35 ℃로 하여 전자파 차폐막 조성물 분사의 안정성을 높인다.The temperature of the 1st injection head 20 is 1-50 degreeC, More preferably, it is 25-35 degreeC, and raises the stability of spraying an electromagnetic wave shielding film composition.
제2분사 헤드(30)는 상기 제1분사 헤드(20)와 마찬가지로 컨베이어(10)의 상부로 간격을 두고 배치되며, 컨베이어(10)의 상면에 놓여진 반도체 칩(2)의 측면(2b)에 전자파 차폐막 조성물을 도포한다.Like the first spray head 20, the second spray head 30 is disposed at an upper portion of the conveyor 10 at intervals, and is disposed on the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10. An electromagnetic wave shielding film composition is apply | coated.
상기 제2분사 헤드(30)는 제트 분사 방식 또는 스프레이 분사 방식으로 전자파 차폐막 조성물을 도포할 수 있다. 제트 분사 방식으로 전자파 차폐막 조성물을 도포하는 경우에는 상기했던 바와 같이 전자파 차폐막 조성물이 도포되는 두께와 도포 위치를 정밀하게 제어할 수 있다. 반도체 칩(2)의 측면(2b)은 상면(2a)보다 작은 면적을 가지므로, 스프레이 분사 방식으로 반도체 칩(2)의 측면(2b)에 전자파 차폐막 조성물을 도포하는 경우에도 충분히 균질한 두께의 전자파 차폐막을 형성할 수 있다.The second spray head 30 may apply the electromagnetic shielding film composition by a jet spray method or a spray spray method. When apply | coating an electromagnetic wave shielding film composition by a jet spray system, as mentioned above, the thickness and application | coating position which an electromagnetic wave shielding film composition is apply | coated can be precisely controlled. Since the side surface 2b of the semiconductor chip 2 has an area smaller than that of the upper surface 2a, even when the electromagnetic wave shielding film composition is applied to the side surface 2b of the semiconductor chip 2 by a spray injection method, it has a sufficiently homogeneous thickness. An electromagnetic wave shielding film can be formed.
전자파 차폐막 조성물의 점도가 너무 낮은 경우에는 전자파 차폐막 조성물의 흐름성이 증가하여 반도체 칩의 측면에 균일한 전자파 차폐막을 형성하기 어려울 수 있으므로 제2분사 헤드(30)로 분사하는 전자파 차폐막 조성물은 너무 낮은 점도를 갖지 않도록 한다.If the viscosity of the electromagnetic shielding film composition is too low, the flowability of the electromagnetic shielding film composition may increase, and thus it may be difficult to form a uniform electromagnetic shielding film on the side of the semiconductor chip. Thus, the electromagnetic shielding film composition sprayed onto the second spray head 30 may be too low. Do not have a viscosity.
경화기(40)는 컨베이어(10)의 상부에 위치하며, 컨베이어(10) 상면에 놓인 반도체 칩(2)의 상면(2a)과 측면(2b)에 도포된 액상형의 전자파 차폐막 조성물을 가열하여 경화시킨다. 이에 따라, 반도체 칩(2)의 표면에서 전자파 차폐막 조성물이 흐르는 것을 방지하고 전자파 차폐막 형성에 소요되는 시간을 단축할 수 있다.The curing machine 40 is positioned above the conveyor 10, and cures by heating the liquid electromagnetic wave shielding film composition applied to the upper surface 2a and the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10. . Accordingly, it is possible to prevent the electromagnetic wave shielding film composition from flowing on the surface of the semiconductor chip 2 and to shorten the time required to form the electromagnetic wave shielding film.
경화기(40)에 의한 작업은 140 ~ 160℃ 온도에서 4 ~ 6분간 이루어지는 것이 바람직하다.The work by the curing machine 40 is preferably made for 4 to 6 minutes at a temperature of 140 ~ 160 ℃.
상기 제2분사 헤드(30)는 도 1에서와 같이, 컨베이어(10)의 상면과 경사를 이루도록 배치될 수 있다.As shown in FIG. 1, the second injection head 30 may be disposed to be inclined with the top surface of the conveyor 10.
이러한 제2분사 헤드(30)는 수직하게 놓여진 반도체 칩(2)의 측면(2b)과도 경사를 이루어 반도체 칩(2)의 측면(2b)에 전자파 차폐막 조성물을 용이하게 도포할 수 있다.The second spray head 30 may also be inclined with the side surface 2b of the semiconductor chip 2 that is vertically placed to easily apply the electromagnetic shielding film composition to the side surface 2b of the semiconductor chip 2.
상기 제2분사 헤드(30)는 컨베이어(10) 상면에 놓여진 반도체 칩(2)의 측면(2b)과 직각을 이루는 방향으로 전자파 차폐막 조성물을 도포할 수도 있다. 즉, 도 2에 도시되어 있는 것과 같이 컨베이어(10)의 일부 구간이 롤러의 외주면을 따라 이동하면서 형성되는 방향전환부(11)를 둠으로써 컨베이어(10)의 상면 중 일부가 경사지게 형성되도록 하고, 제2분사 헤드(30)를 상기 방향전환부(11)의 접선방향으로 배치함으로써 반도체 칩(2)의 측면(2b)에 바로 전자파 차폐막 조성물을 도포할 수 있다.The second spray head 30 may apply the electromagnetic shielding film composition in a direction perpendicular to the side surface 2b of the semiconductor chip 2 placed on the upper surface of the conveyor 10. That is, as shown in FIG. 2, a part of the upper surface of the conveyor 10 is formed to be inclined by providing a turning part 11 formed while some sections of the conveyor 10 move along the outer circumferential surface of the roller. The electromagnetic wave shielding film composition can be directly applied to the side surface 2b of the semiconductor chip 2 by arranging the second injection head 30 in the tangential direction of the direction changing part 11.
반도체 칩(2)의 측면(2b)과 직각을 이루는 방향으로 도포되는 전자파 차폐막 조성물은 도포되는 두께와 위치를 용이하게 조절할 수 있다.The electromagnetic shielding film composition applied in a direction perpendicular to the side surface 2b of the semiconductor chip 2 can easily adjust the thickness and the position to be applied.
컨베이어(10)가 직선 경로만을 가지는 경우에는 반도체 칩(2)의 측면(2b)에 직각을 이루는 방향으로 전자파 차폐막 조성물을 도포하고자 하면 제2분사 헤드(30)와 컨베이어(10)의 상면이 간섭할 수 있지만, 컨베이어(10)가 방향전환부(11)를 구비하는 경우에는 제2분사 헤드(30)가 반도체 칩(2)의 측면(2b)과 직각을 이루는 방향으로 배치되더라도 방향전환부(11) 부분의 경사에 의해 컨베이어(10) 상면과 제2분사 헤드(30)가 간섭하지 않는다.In the case where the conveyor 10 has only a straight path, when the electromagnetic shielding film composition is applied in a direction perpendicular to the side surface 2b of the semiconductor chip 2, the second spray head 30 and the upper surface of the conveyor 10 interfere with each other. However, in the case where the conveyor 10 includes the turning part 11, the turning part (even if the second spray head 30 is arranged in a direction perpendicular to the side surface 2b of the semiconductor chip 2) 11) The upper surface of the conveyor 10 and the second spray head 30 do not interfere with the inclination of the portion.
컨베이어(10)는 접착성을 가질 수 있다. Conveyor 10 may be adhesive.
이 경우, 제1분사 헤드(20)나 제2분사 헤드(30)로 반도체 칩(2)에 전자파 차폐막 조성물을 도포할 때 컨베이어(10) 상에서 반도체 칩(2)의 위치가 변화되는 것을 방지할 수 있어 도포의 정확성을 높일 수 있으며, 특히 경사를 가지는 방향전환부(11)에서 반도체 칩(2)이 이탈하게 되는 것을 방지할 수 있다.In this case, when the electromagnetic wave shielding film composition is applied to the semiconductor chip 2 with the first injection head 20 or the second injection head 30, the position of the semiconductor chip 2 on the conveyor 10 can be prevented from changing. It is possible to increase the accuracy of the coating, and in particular, it is possible to prevent the semiconductor chip 2 from being separated from the turning part 11 having an inclination.
상기 제2분사 헤드(30)는 도 3의 (a)에 도시되어 있는 것과 같이, 반도체 칩(2)의 각 측면(2b)을 향하도록 형성될 수 있다. 참고로, 도 3의 (a)는 반도체 칩(2)을 상부에서 바라본 모습이다.The second injection head 30 may be formed to face each side 2b of the semiconductor chip 2, as shown in FIG. For reference, FIG. 3A is a view of the semiconductor chip 2 from above.
반도체 칩(2)은 보통 납작한 육면체 형상으로 이루어지므로, 제2분사 헤드(30)를 반도체 칩(2)의 각 측면(2b)을 향하도록 형성하여 반도체 칩(2)의 각 측면(2b)에 직각 방향으로 전자파 차폐막 조성물을 도포하면 반도체 칩(2)의 모든 측면(2b)에서 도포 위치와 두께를 용이하게 조절할 수 있고, 도포 시간을 단축할 수 있다.Since the semiconductor chip 2 is usually formed in a flat hexahedral shape, the second injection head 30 is formed to face each side 2b of the semiconductor chip 2 and is formed on each side 2b of the semiconductor chip 2. Applying the electromagnetic wave shielding film composition in a right angle direction can easily adjust the application position and thickness in all the side surfaces 2b of the semiconductor chip 2, and can shorten the application time.
상기 제2분사 헤드(30)는 도 3의 (b)에 도시되어 있는 것과 같이, 반도체 칩(2)의 마주보는 두 측방 모서리(2c)를 향하도록 형성될 수도 있다.The second spray head 30 may be formed to face two side edges 2c of the semiconductor chip 2, as shown in FIG.
이 경우, 상대적으로 적은 수의 제2분사 헤드(30)로 반도체 칩(2)의 모든 측면(2b)에 전자파 차폐막 조성물을 도포해주는 것이 가능하다.In this case, it is possible to apply the electromagnetic shielding film composition to all the side surfaces 2b of the semiconductor chip 2 with the relatively small number of second injection heads 30.
제2분사 헤드(30)가 반도체 칩(2)의 측방 모서리(2c)를 향하게 되면 반도체 칩(2)의 측면(2b)에 경사진 방향으로 전자파 차폐막 조성물이 도포되어 전자파 차폐막 조성물이 반도체 칩(2)의 측면(2b)에서 넓게 퍼지게 되므로, 제2분사 헤드(30)가 반도체 칩(2)의 각 측면(2b)을 향하도록 형성되는 경우에 비하여 여러 번 전자파 차폐막 조성물을 도포해주는 것이 바람직하다.When the second injection head 30 faces the side edge 2c of the semiconductor chip 2, the electromagnetic wave shielding film composition is applied to the side surface 2b of the semiconductor chip 2 in an inclined direction so that the electromagnetic wave shielding film composition is a semiconductor chip ( Since it spreads widely on the side surface 2b of 2), it is preferable to apply the electromagnetic shielding film composition several times as compared to the case where the second injection head 30 is formed to face each side surface 2b of the semiconductor chip 2. .
제1분사 헤드(20)와 제2분사 헤드(30) 사이에는 예비 경화기(50)를 더 구비할 수 있다.The preliminary curing machine 50 may be further provided between the first spray head 20 and the second spray head 30.
상기 예비 경화기(50)는 제1분사 헤드(20)를 거쳐 반도체 칩(2)의 상면(2a)에 도포되어 있는 전자파 차폐막 조성물을 예비 경화시키는 역할을 한다.The preliminary curing machine 50 serves to precure the electromagnetic wave shielding film composition applied to the upper surface 2a of the semiconductor chip 2 via the first spray head 20.
예비 경화기(50)는 히터로 이루어져 전자파 차폐막 조성물을 열 경화시키거나 유브이(UV; Ultra Violet) 조사기로 이루어져 전자파 차폐막 조성물을 유브이 경화시킬수 있다.The preliminary curing machine 50 is composed of a heater to heat-cure the electromagnetic wave shielding film composition or UV (ultraviolet (UV)) irradiator may be cured the electromagnetic wave shielding film composition.
예비 경화에 의해 유동성이 저하된 전자파 차폐막 조성물은 제2분사 헤드(30)에 의한 후속 작업시 흐르지 않으므로, 반도체 칩(2)의 상면(2a)에 도포된 전자파 차폐막 조성물의 유동에 의해 반도체 칩 측면(2b)의 전자파 차폐막 두께가 균질하지 않게 되는 것을 방지할 수 있다.Since the electromagnetic shielding film composition whose fluidity is lowered by preliminary curing does not flow during subsequent work by the second injection head 30, the semiconductor chip side surface is caused by the flow of the electromagnetic shielding film composition applied to the upper surface 2a of the semiconductor chip 2. The electromagnetic wave shielding film thickness of (2b) can be prevented from becoming homogeneous.
상기 예비 경화기(50)는 전자파 차폐막 조성물을 완전히 경화시키는 것이 아니라 전자파 차폐막 조성물에서 유동성을 없애는 정도로만 경화시키면 되므로, 상기 경화기(40)에서보다 더 낮은 온도나 짧은 시간으로 전자파 차폐막 조성물 경화시킨다.Since the preliminary curing machine 50 does not completely cure the electromagnetic wave shielding film composition but only hardens the fluidity in the electromagnetic shielding film composition, the preliminary curing machine 50 cures the electromagnetic wave shielding film composition at a lower temperature or a shorter time than the curing device 40.
이하에서는 상기한 반도체 칩의 전자파 차폐막 형성 장치(1)를 이용하여 반도체 칩에 전자파 차폐막을 형성하는 방법에 대하여 설명한다. 본 발명에 의한 반도체 칩의 전자파 차폐막 형성 방법에 대하여 설명하면서, 반도체 칩의 전자파 차폐막 형성 장치(1)를 설명하면서 언급된 부분에 대하여는 자세하게 설명하지 않도록 한다.Hereinafter, a method of forming the electromagnetic shielding film on the semiconductor chip by using the electromagnetic shielding film forming apparatus 1 of the semiconductor chip will be described. While the electromagnetic wave shielding film formation method of the semiconductor chip by this invention is demonstrated, the part mentioned while describing the electromagnetic wave shielding film forming apparatus 1 of a semiconductor chip is not demonstrated in detail.
도 4에는 본 발명에 의한 반도체 칩의 전자파 차폐막 형성 방법의 순서도가 도시되어 있다. 본 발명에 의한 반도체 칩의 전자파 차폐막 형성 방법은 크게, 상면 코팅 단계(S20), 측면 코팅 단계(S40) 및 경화 단계(S50)를 포함하여 이루어진다.4 is a flowchart of a method for forming an electromagnetic wave shielding film of a semiconductor chip according to the present invention. The electromagnetic wave shielding film forming method of the semiconductor chip according to the present invention largely comprises a top coating step (S20), a side coating step (S40) and a curing step (S50).
상면 코팅 단계(S20)에서는 제1분사 헤드(20)를 이용하여 반도체 칩(2)의 상면(2a)에 전도성 입자를 포함하는 전자파 차폐막 조성물을 도포한다. 제1분사 헤드(20)는 제트 분사 방식으로 전자파 차폐막 조성물을 도포하므로 도포 두께와 위치를 정밀하게 조절할 수 있다.In the top coating step S20, the electromagnetic wave shielding film composition including the conductive particles is coated on the top surface 2a of the semiconductor chip 2 using the first spray head 20. Since the first spray head 20 coats the electromagnetic wave shielding film composition by a jet spray method, it is possible to precisely adjust the coating thickness and position.
측면 코팅 단계(S40)에서는 반도체 칩(2)의 측면(2b)에 전자파 차폐막 조성물을 도포한다. 제2분사 헤드(30)는 제트 분사 방식 또는 스프레이 분사 방식으로 전자파 차폐막 조성물을 도포한다.In the side coating step (S40), an electromagnetic shielding film composition is applied to the side surface 2b of the semiconductor chip 2. The second injection head 30 applies the electromagnetic shielding film composition by a jet spray method or a spray spray method.
경화 단계(S50)에서는 반도체 칩(2) 표면에 도포된 전자파 차폐막 조성물을 경화시킨다.In the curing step (S50), the electromagnetic shielding film composition applied to the surface of the semiconductor chip 2 is cured.
이러한 본 발명에 의한 반도체 칩(2)의 전자파 차폐막 형성 방법을 적용하는 경우, 간단한 구성의 장치를 통해 균질한 두께를 가지는 전자파 차폐막을 형성할 수 있으므로 우수한 성능의 반도체 칩(2)을 제작하는 것이 가능하고, 전자파 차폐막 형성에 소요되는 시간을 단축할 수 있다.In the case of applying the electromagnetic wave shielding film formation method of the semiconductor chip 2 according to the present invention, since the electromagnetic wave shielding film having a uniform thickness can be formed through the device of a simple configuration, it is necessary to manufacture the semiconductor chip 2 of excellent performance It is possible to shorten the time required for forming the electromagnetic wave shielding film.
상기 상면 코팅 단계(S20) 전에는 표면 처리 단계(S10)가 더 진행될 수 있다.Before the top coating step S20, the surface treatment step S10 may be further performed.
표면 처리 단계(S10)에서는 반도체 칩(2)의 표면을 플라즈마로 처리한다. 이에 따라, 상면 코팅 단계(S20) 및 측면 코팅 단계(S40)에서 반도체 칩(2) 표면에 대한 전자파 차폐막 조성물의 부착력이 증가하게 된다.In the surface treatment step S10, the surface of the semiconductor chip 2 is treated with plasma. Accordingly, the adhesion of the electromagnetic shielding film composition to the surface of the semiconductor chip 2 is increased in the top coating step (S20) and the side coating step (S40).
상면 코팅 단계(S20)와 측면 코팅 단계(S40) 사이에는 예비 경화 단계(S30)가 더 진행될 수 있다.The preliminary curing step S30 may be further performed between the top coating step S20 and the side coating step S40.
예비 경화 단계(S30)에서는 반도체 칩 상면(2a)에 도포된 전자파 차폐막 조성물을 예비 경화시켜, 반도체 칩 상면(2a)의 전자파 차폐막 조성물이 유동함으로써 반도체 칩 측면(2b)의 전자파 차폐막 형성에 영향을 주는 것을 방지할 수 있다.In the preliminary curing step (S30), the electromagnetic wave shielding film composition applied to the upper surface of the semiconductor chip 2a is preliminarily cured, and the electromagnetic wave shielding film composition of the upper surface of the semiconductor chip 2a flows to influence the formation of the electromagnetic wave shielding film of the semiconductor chip side surface 2b. You can prevent giving.
예비 경화 단계(S30)에서는 전자파 차폐막 조성물을 열 또는 유브이(UV; Ultra Violet)에 의해 경화시킬 수 있다.In the preliminary curing step (S30), the electromagnetic wave shielding film composition may be cured by heat or UV (Ultra Violet).
상면 코팅 단계(S20)에서는 반도체 칩의 상면(2a) 일부에 전자파 차폐막 조성물을 도포하고, 측면 코팅 단계(S40)에서는 반도체 칩의 측면(2b) 일부에 전자파 차폐막 조성물을 도포해줄 수 있다.In the top coating step S20, the electromagnetic shielding film composition may be applied to a part of the upper surface 2a of the semiconductor chip, and in the side coating step S40, the electromagnetic shielding film composition may be applied to the part of the side surface 2b of the semiconductor chip.
전자파 차폐막은 접지에 의해 반도체 칩에 대한 전자파의 영향을 차단하기 위한 것이므로 반드시 반도체 칩 전체를 전자파 차폐막으로 코팅해주어야 할 필요는 없다. 따라서, 반도체 칩의 표면 일부에 대해서만 전자파 차폐막을 형성함으로써 반도체 칩에 대해 전자파를 차단하면서도 전자파 차폐막 형성에 소요되는 시간과 비용을 줄일 수 있다.The electromagnetic shielding film is intended to block the influence of electromagnetic waves on the semiconductor chip by grounding, so it is not necessary to coat the entire semiconductor chip with the electromagnetic shielding film. Therefore, by forming the electromagnetic shielding film only on a part of the surface of the semiconductor chip, it is possible to reduce the time and cost required to form the electromagnetic shielding film while blocking the electromagnetic wave from the semiconductor chip.
반도체 칩 표면의 일부에만 전자파 차폐막 조성물이 도포되더라도, 반도체 칩 상면(2a)의 전자파 차폐막 조성물과 반도체 칩 측면(2b)의 전자파 차폐막 조성물은 서로 연결되어야 할 것이다.Although the electromagnetic shielding film composition is applied only to a part of the semiconductor chip surface, the electromagnetic shielding film composition of the semiconductor chip upper surface 2a and the electromagnetic shielding film composition of the semiconductor chip side surface 2b should be connected to each other.
본 발명의 권리범위는 상술한 실시예에 한정되는 것이 아니라 첨부된 특허청구범위 내에서 다양한 형태의 실시예로 구현될 수 있다. 특허청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 누구든지 변형 가능한 다양한 범위까지 본 발명의 청구범위 기재의 범위 내에 있는 것으로 본다.The scope of the present invention is not limited to the above-described embodiment, but may be embodied in various forms of embodiments within the scope of the appended claims. Without departing from the gist of the invention claimed in the claims, it is intended that any person skilled in the art to which the present invention pertains falls within the scope of the claims described in the present invention to various extents which can be modified.

Claims (12)

  1. 상면에 반도체 칩이 놓여지는 컨베이어;A conveyor on which semiconductor chips are placed;
    상기 컨베이어의 상부에서 상기 컨베이어 상면에 놓여진 반도체 칩의 상면에 전자파 차폐막 조성물을 제트 분사 방식으로 도포하는 제1분사 헤드;A first spray head for applying an electromagnetic shielding film composition to a top surface of the semiconductor chip on the conveyor from the top of the conveyor by a jet spray method;
    상기 컨베이어의 상부에서 컨베이어 상면에 놓여진 반도체 칩의 측면에 전자파 차폐막 조성물을 도포하는 제2분사 헤드; 및A second spray head for applying an electromagnetic shielding film composition to a side of a semiconductor chip placed on an upper surface of the conveyor at an upper portion of the conveyor; And
    상기 컨베이어의 상부에서 상기 컨베이어 상면에 놓여진 반도체 칩 표면에 도포된 전자파 차폐막 조성물을 경화시키는 경화기;를 포함하여 이루어지는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.And a curing machine for curing the electromagnetic shielding film composition applied to the surface of the semiconductor chip placed on the upper surface of the conveyor at the upper part of the conveyor.
  2. 제1항에 있어서,The method of claim 1,
    상기 제2분사 헤드는 상기 컨베이어의 상면과 경사를 이루도록 배치되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The second injection head is an electromagnetic shielding film forming apparatus of a semiconductor chip, characterized in that arranged to be inclined with the upper surface of the conveyor.
  3. 제1항에 있어서,The method of claim 1,
    상기 컨베이어는 상면이 경사지게 형성되는 방향전환부를 구비하고,The conveyor is provided with a redirection portion is formed inclined top surface,
    상기 제2분사 헤드는 상기 방향전환부의 접선방향으로 배치되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The second injection head is an electromagnetic shielding film forming apparatus of a semiconductor chip, characterized in that disposed in the tangential direction of the direction change unit.
  4. 제1항에 있어서,The method of claim 1,
    상기 제2분사 헤드는 제트 분사 방식 또는 스프레이 분사 방식으로 전자파 차폐막 조성물을 도포하는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The second injection head is an electromagnetic wave shielding film forming apparatus of a semiconductor chip, characterized in that for applying the electromagnetic wave shielding film composition by a jet injection method or a spray injection method.
  5. 제1항에 있어서,The method of claim 1,
    상기 제2분사 헤드는 반도체 칩의 각 측면을 향하도록 형성되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The second injection head is formed so as to face each side of the semiconductor chip, the electromagnetic shielding film forming apparatus of the semiconductor chip.
  6. 제1항에 있어서,The method of claim 1,
    상기 제2분사 헤드는 반도체 칩의 마주보는 두 측방 모서리를 향하도록 형성되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The second injection head is formed so as to face two side edges of the semiconductor chip facing the electromagnetic wave shielding film forming apparatus.
  7. 제1항에 있어서,The method of claim 1,
    상기 제1분사 헤드와 제2분사 헤드 사이에는, 컨베이어 상면에 놓여진 반도체 칩 표면에 도포된 전자파 차폐막 조성물을 예비 경화시키는 예비 경화기를 더 포함하는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.An electromagnetic wave shielding film forming apparatus of a semiconductor chip, further comprising a preliminary curing machine for preliminarily curing the electromagnetic shielding film composition applied to the surface of the semiconductor chip placed on the conveyor between the first spraying head and the second spraying head.
  8. 제1항에 있어서,The method of claim 1,
    상기 컨베이어는 접착성을 가지는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 장치.The conveyor is electromagnetic wave shielding film forming apparatus of the semiconductor chip, characterized in that the adhesive.
  9. 반도체 칩의 상면에 전도성 입자를 포함하는 전자파 차폐막 조성물을 제트 분사 방식으로 도포하는 상면 코팅 단계;A top coating step of applying an electromagnetic shielding film composition including conductive particles to a top surface of the semiconductor chip by a jet spray method;
    반도체 칩의 측면에 전도성 입자를 포함하는 전자파 차폐막 조성물을 도포하는 하는 측면 코팅 단계; 및A side coating step of applying an electromagnetic shielding film composition including conductive particles to a side of the semiconductor chip; And
    반도체 칩 표면에 도포된 전자파 차폐막 조성물을 경화시키는 경화 단계;를 포함하여 이루어지는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 방법.And a curing step of curing the electromagnetic wave shielding film composition applied on the surface of the semiconductor chip.
  10. 제9항에 있어서,The method of claim 9,
    상기 상면 코팅 단계 전에는, 반도체 칩의 표면을 플라즈마로 처리하는 표면 처리 단계가 더 진행되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 방법.Before the top coating step, a surface treatment step of processing the surface of the semiconductor chip with a plasma further characterized in that the electromagnetic shielding film forming method of the semiconductor chip.
  11. 제9항에 있어서,The method of claim 9,
    상기 상면 코팅 단계와 상기 측면 코팅 단계 사이에는, 반도체 칩 상면에 도포된 전자파 차폐막 조성물을 예비 경화시키는 예비 경화 단계가 더 진행되는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 방법.Between the top coating step and the side coating step, a preliminary curing step of pre-curing the electromagnetic wave shielding film composition applied to the upper surface of the semiconductor chip is further carried out.
  12. 제9항에 있어서,The method of claim 9,
    상기 상면 코팅 단계에서는 반도체 칩의 상면 일부에 전자파 차폐막 조성물을 도포하고,In the top coating step, the electromagnetic shielding film composition is applied to a part of the top surface of the semiconductor chip,
    상기 측면 코팅 단계에서는 반도체 칩의 측면 일부에 전자파 차폐막 조성물을 도포하는 것을 특징으로 하는 반도체 칩의 전자파 차폐막 형성 방법.In the side coating step, the electromagnetic shielding film forming method of the semiconductor chip, characterized in that for applying a microwave shielding film composition to a portion of the side surface of the semiconductor chip.
PCT/KR2018/002930 2017-03-14 2018-03-13 Device and method for forming electromagnetic shielding film of semiconductor chip WO2018169280A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20170031884 2017-03-14
KR10-2017-0031884 2017-03-14

Publications (1)

Publication Number Publication Date
WO2018169280A1 true WO2018169280A1 (en) 2018-09-20

Family

ID=63523799

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/002930 WO2018169280A1 (en) 2017-03-14 2018-03-13 Device and method for forming electromagnetic shielding film of semiconductor chip

Country Status (3)

Country Link
KR (1) KR102028027B1 (en)
TW (1) TWI676229B (en)
WO (1) WO2018169280A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
WO2025038154A1 (en) 2023-08-17 2025-02-20 Dow Silicones Corporation Two-step curable silicone composition and methods for the preparation and use thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102650018B1 (en) * 2022-08-30 2024-03-22 엔트리움 주식회사 Method of fabricating electronic device
KR102642318B1 (en) * 2022-08-30 2024-03-04 엔트리움 주식회사 Method of fabricating electronic device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000032426A (en) * 1998-11-14 2000-06-15 손명호 Coating method of electromagnetic wave-shielding membrane and its coating equipment
KR20060074383A (en) * 2004-12-27 2006-07-03 미래산업 주식회사 Electromagnetic shielding film coating device and method
KR20110122204A (en) * 2004-06-02 2011-11-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device manufacturing method
KR101479251B1 (en) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 Sputtering Apparatus for EMI shielding of Semiconductor Packages and In-line Sputtering Deposition System Having the Same
KR20160086246A (en) * 2015-01-09 2016-07-19 삼성전자주식회사 Semiconductor Package and Manufacturing Method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002032588A1 (en) * 2000-10-17 2002-04-25 Neophotonics Corporation Coating formation by reactive deposition
KR100409203B1 (en) * 1999-12-23 2003-12-11 재단법인 포항산업과학연구원 UV paints coating system for preventing non-cementation of UV paints
TWI496626B (en) * 2012-06-06 2015-08-21 Yong Hau Entpr Co Ltd Casing spraying method
US9831187B2 (en) * 2012-11-30 2017-11-28 Apic Yamada Corporation Apparatus and method for electrostatic spraying or electrostatic coating of a thin film
JP6077921B2 (en) * 2013-04-18 2017-02-08 横浜ゴム株式会社 Coated rubber composition for conveyor belt, laminate and conveyor belt
TWI585937B (en) * 2014-08-01 2017-06-01 乾坤科技股份有限公司 Semiconductor package with conformal em shielding structure and manufacturing method of same
KR101662068B1 (en) 2015-08-07 2016-10-04 (주) 씨앤아이테크놀로지 Eletro magnetic interference shielding method of semiconductor packages

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000032426A (en) * 1998-11-14 2000-06-15 손명호 Coating method of electromagnetic wave-shielding membrane and its coating equipment
KR20110122204A (en) * 2004-06-02 2011-11-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device manufacturing method
KR20060074383A (en) * 2004-12-27 2006-07-03 미래산업 주식회사 Electromagnetic shielding film coating device and method
KR101479251B1 (en) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 Sputtering Apparatus for EMI shielding of Semiconductor Packages and In-line Sputtering Deposition System Having the Same
KR20160086246A (en) * 2015-01-09 2016-07-19 삼성전자주식회사 Semiconductor Package and Manufacturing Method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
WO2025038154A1 (en) 2023-08-17 2025-02-20 Dow Silicones Corporation Two-step curable silicone composition and methods for the preparation and use thereof

Also Published As

Publication number Publication date
KR20180105577A (en) 2018-09-28
KR102028027B1 (en) 2019-10-04
TW201839893A (en) 2018-11-01
TWI676229B (en) 2019-11-01

Similar Documents

Publication Publication Date Title
WO2018169280A1 (en) Device and method for forming electromagnetic shielding film of semiconductor chip
US6524960B2 (en) Use of residual organic compounds to facilitate gate break on a carrier substrate for a semiconductor device
WO2015163527A1 (en) Method for packaging semiconductor elements and device for performing same
CN103096633A (en) Solder resisting method for circuit board
WO2009088198A2 (en) Light emitting diode coating method
US5863620A (en) Process and apparatus for coating printed circuit boards
WO2016163694A1 (en) Semiconductor package and method for preparing same
WO2017200271A2 (en) Inkjet resin composition and printed wiring board using same
CN107567203A (en) A kind of method of spray printing anti-solder ink
WO2018147515A1 (en) Method for manufacturing magnetic collet
WO2015125999A1 (en) Cof-type semiconductor package and method for manufacturing same
WO2019203446A1 (en) Barrier rib pattern film and manufacturing method therefor
WO2017196145A1 (en) Circuit board coating device
WO2018143501A1 (en) Method for manufacturing fine-pitch anisotropic conductive adhesive and fine-pitch anisotropic conductive adhesive manufactured by same method
CN112770523A (en) High-processing-capacity gold melting process for selectively applying jet printing ink
KR101353247B1 (en) IR dryer, and the method for PSR(Photo Solder Resist of printed circuit boards using the same
WO2023136621A1 (en) Printed circuit board and manufacturing method therefor
WO2018016699A1 (en) Thermal bonding adhesive composition, thermal bonding double-sided adhesive tape, method for manufacturing thermal bonding double-sided adhesive tape, and method for using thermal bonding double-sided adhesive tape
WO2015056983A1 (en) Blanket manufacturing apparatus and blanket manufacturing method
WO2018230806A1 (en) Substrate treatment device
KR20010053093A (en) Method for coating printed circuit boards or similar substrates
WO2012138131A2 (en) Pattern-printing apparatus
CN114531787A (en) Preparation method of circuit board solder mask layer
JP4357792B2 (en) Method for manufacturing printed wiring board
WO2016085300A1 (en) Substrate bonding method and display substrate manufactured thereby

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18766793

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18766793

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载