WO2018168342A1

WO2018168342A1 - Crystallized glass support substrate and laminate using same

Info

Publication number: WO2018168342A1
Application number: PCT/JP2018/005717
Authority: WO
Inventors: 哲哉村田
Original assignee: 日本電気硝子株式会社
Priority date: 2017-03-13
Filing date: 2018-02-19
Publication date: 2018-09-20
Also published as: JP2018150188A; JP6922276B2; TW201837975A

Abstract

This crystallized glass support substrate is designed to support fabricated wafers and is characterized by having one or more among lithium disilicate, α-cristobalite and α-quartz precipitated, and a Young's modulus of 80 GPa or more.

Description

Support crystallized glass substrate and laminate using the same

The present invention relates to a support crystallized glass substrate and a laminate using the same, and specifically to a support crystallized glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the support crystallized glass substrate.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.

In addition, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then dicing them into individual pieces. However, in the conventional WLP, in addition to the difficulty of increasing the number of pins, since the back surface of the semiconductor chip is mounted, the semiconductor chip is likely to be chipped.

Therefore, a fan out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.

The fan-out type WLP includes a step of forming a processed substrate by molding a plurality of semiconductor chips with a resin sealing material and then wiring to one surface of the processed substrate, a step of forming a solder bump, and the like.

Since these processes involve a heat treatment at about 200 ° C., the sealing material may be deformed and the processed substrate may change in dimensions. When the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

From such circumstances, in order to suppress the dimensional change of the processed substrate, it has been studied to support the processed substrate using a glass substrate (see Patent Document 1).

The glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the glass substrate can be easily fixed when an adhesive layer or the like is provided with an ultraviolet curable adhesive or the like. Furthermore, when a release layer or the like that absorbs infrared rays is provided, the processed substrate and the glass substrate can be easily separated. As another method, the processed substrate and the glass substrate can be easily fixed and separated even when an adhesive layer or the like is provided with an ultraviolet curable tape or the like.

JP2015-78113A

By the way, if the thermal expansion coefficients of the processed substrate and the glass substrate are mismatched, a dimensional change (particularly, warpage) of the processed substrate is likely to occur during processing. As a result, it is difficult to perform wiring with high density on one surface of the processed substrate, and it is also difficult to accurately form solder bumps.

When the ratio of the semiconductor chip is small in the processed substrate and the ratio of the sealing material is large, the thermal expansion coefficient of the processed substrate is increased. In this case, about 25% by mass of the alkali metal oxide is contained in the glass composition of the glass substrate. It is necessary to introduce and raise the thermal expansion coefficient of the glass substrate.

However, when an alkali metal oxide is excessively introduced into the glass composition of the glass substrate, the amount of alkali elution from the glass substrate increases. As a result, in the manufacturing process of the semiconductor package, it becomes difficult to pass a step of using a chemical solution (for example, a step of removing a chemical solution attached to the surface of the support glass substrate when recycling the support glass substrate).

Also, when a processed substrate is supported by a supporting glass substrate to form a laminated body, if the rigidity of the entire laminated body is low, the processed substrate is likely to be deformed, warped, or damaged during processing. As a result, it is difficult to perform wiring with high density on one surface of the processed substrate, and it is also difficult to accurately form solder bumps.

The present invention has been made in view of the above circumstances, and its technical problem is that when the ratio of semiconductor chips is small in the processed substrate and the ratio of the sealing material is large, the dimensional change of the processed substrate during processing ( In particular, it is to contribute to high-density mounting of semiconductor packages by creating a support substrate and a laminate using the support substrate that hardly cause warpage and have a small amount of alkali elution.

As a result of repeating various experiments, the present inventors have found that the above technical problem can be solved by using a crystallized glass substrate in which a specific high expansion crystal is precipitated in a glass matrix as a support substrate. This is proposed as the present invention. That is, the support crystallized glass substrate of the present invention is a support crystallized glass substrate for supporting a processed substrate, and one or more of lithium disilicate, α-cristobalite, and α-quartz are deposited. The Young's modulus is 80 GPa or more. Here, “Young's modulus” refers to a value measured by a bending resonance method. 1 GPa corresponds to approximately 101.9 kgf / mm ² .

In the present invention, a high-expansion crystal, that is, a crystallized glass substrate on which one or more of lithium disilicate, α-cristobalite, and α-quartz is precipitated is used as the support substrate. When these crystals are deposited in the glass matrix, the Young's modulus is improved as compared with the crystalline glass before crystallization. Further, when these crystals are precipitated, it is not necessary to introduce an excessive amount of alkali metal oxide into the composition in order to increase the thermal expansion coefficient. As a result, it becomes possible to reduce the alkali elution amount of the support crystallized glass substrate. Note that the crystallized glass substrate can be easily smoothed in the same manner as the glass substrate, and can impart light permeability.

The support crystallized glass substrate of the present invention has a Young's modulus of 80 GPa or more. In this way, since the rigidity of the entire laminate is increased, deformation, warpage, and breakage of the processed substrate are less likely to occur during processing.

Further, the supported crystallized glass substrate of the present invention preferably has an alkali elution amount of less than 1.5 mg. Here, “alkaline elution amount” refers to a value measured based on JIS R3502.

Further, the support crystallized glass substrate of the present invention has an average transmittance in the thickness direction in the wavelength range of 250 to 1500 nm before weathering test (HAST: Highly Accelerated Temperature and Humidity Stress test) X (%), weather resistance When the average transmittance in the thickness direction in the wavelength range of 250 to 1500 nm after the test (HAST) is Y (%), it is preferable to satisfy the relationship of XY <10%. Here, the “average transmittance” can be measured with a commercially available spectrophotometer.

Further, the support crystallized glass substrate of the present invention has an average linear thermal expansion coefficient ^exceeding 60 × 10 ⁻⁷ / ° C. in a temperature range of 30 to 380 ° C. and not more than 195 × 10 ⁻⁷ / ° C. preferable. In this way, when the ratio of the semiconductor chip is small and the ratio of the sealing material is large in the processed substrate, the thermal expansion coefficients of the processed substrate and the supporting crystallized glass substrate are easily matched. When the thermal expansion coefficients of the two match, it becomes easy to suppress dimensional changes (particularly warpage) of the processed substrate during processing. As a result, wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed. Here, the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.

Further, the support crystallized glass substrate of the present invention preferably has a total thickness deviation (TTV) of 5 μm or less. Here, the “total thickness deviation (TTV)” is a difference between the maximum thickness and the minimum thickness of the entire support crystallized glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Research Institute.

The support crystallized glass substrate of the present invention, a composition, in _{_{_{mass%, SiO 2 50 ~ 85%}}} , Al 2 O 3 0.1 ~ 15%, B 2 O 3 0 ~ 10%, P 2 O 5 0-15%, Li ₂ O 2-20%, Na ₂ O 0-10%, K ₂ O 0-7%, MgO 0-10%, CaO 0-5%, SrO 0-5%, BaO 0- It is preferable to contain 5%, ZnO 0 to 5%, and ZrO ₂ 0 to 10%.

Further, the support crystallized glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm and a warp amount of 60 μm or less. Here, the "warp amount" is the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting crystallized glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Kaken.

The laminate of the present invention is a laminate comprising at least a processed substrate and a support crystallized glass substrate for supporting the process substrate, wherein the support crystallized glass substrate is the above-mentioned support crystallized glass substrate. And

In the laminate of the present invention, it is preferable that the processed substrate includes a semiconductor chip molded with at least a sealing material.

The method of manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, a step of performing a processing process on the processed substrate, And the above-mentioned support crystallized glass substrate is used as the support crystallized glass substrate.

In the method for manufacturing a semiconductor package of the present invention, it is preferable that the processed substrate includes a semiconductor chip molded with at least a sealing material.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual sectional view showing a manufacturing process of a fan out type WLP.

In the supported crystallized glass substrate of the present invention, one or more of lithium disilicate, α-cristobalite, and α-quartz are preferably deposited, and lithium disilicate is more preferably deposited. . When these crystals precipitate, the Young's modulus and thermal expansion coefficient of the support crystallized glass substrate can be increased while reducing the amount of alkali elution. In particular, lithium disilicate is advantageous in reducing the total thickness deviation (TTV) by the polishing treatment because the size of the crystal particles is easily miniaturized, and also advantageous in ensuring transparency. On the other hand, the support crystallized glass substrate of the present invention is preferably free of β-eucryptite, β-spodumene, β-cristobalite, β-quartz, and solid solutions thereof. If it does in this way, the situation where the thermal expansion coefficient of a support crystallized glass substrate falls unjustly can be avoided.

In the supported crystallized glass substrate of the present invention, the Young's modulus is preferably 80 GPa or more, 85 GPa or more, 90 GPa or more, 95 GPa or more, 98 GPa or more, particularly 100 to 150 GPa. If the Young's modulus is too low, the rigidity of the entire laminate is lowered, and the processed substrate is likely to be deformed, warped, or damaged.

In the supported crystallized glass substrate of the present invention, the alkali elution amount is preferably less than 1.5 mg, 1.0 mg or less, particularly less than 0.5 mg. When there is too much alkali elution amount, the recyclability of a support crystallized glass substrate will fall easily.

In the support crystallized glass substrate of the present invention, the average transmittance in the plate thickness direction in the wavelength range 250 to 1500 nm before the weather resistance test (HAST) is X (%), and the wavelength range 250 to 500 after the weather resistance test (HAST). When the average transmittance in the plate thickness direction at 1500 nm is Y (%), it is preferable to satisfy the relationship of XY <10%, more preferably to satisfy the relationship of XY <5%. It is particularly preferable to satisfy the relationship of Y <3%. When the value of XY increases, the recyclability of the support crystallized glass substrate tends to decrease.

In the support crystallized glass substrate of the present invention, the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 60 × 10 ⁻⁷ / ° C. and not more than 195 × 10 ⁻⁷ / ° C., preferably 80 × 10 ^-7 / ° C. greater, and 195 × ^{10 -7} / ℃ less, more preferably 100 × ^{10 -7} / ℃ or higher, and 160 × ^{10 -7} / ℃ less, particularly preferably 100 × ^{10 -7} / ℃ or higher And 150 × 10 ⁻⁷ / ° C. or less. If the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the support crystallized glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warpage) of the processed substrate is likely to occur during processing.

Supporting crystallized glass substrate of the present invention, a composition, in _{_{_{mass%, SiO 2 50 ~ 85%}}} , Al 2 O 3 0.1 ~ 15%, B 2 O 3 0 ~ 10%, P 2 O 5 0 ~ 15%, Li ₂ O 2-20%, Na ₂ O 0-10%, K ₂ O 0-7%, MgO 0-10%, CaO 0-5%, SrO 0-5%, BaO 0-5% ZnO 0 to 5% and ZrO ₂ 0 to 10% are preferable. The reason for limiting the content of each component as described above will be described below. In addition, in description of content of each component,% display represents the mass% unless there is particular notice.

SiO ₂ is a component for increasing Young's modulus and weather resistance, and is a component for precipitating lithium disilicate, α-cristobalite, α-quartz and the like. However, when the content of SiO ₂ is too large, the higher the viscosity at high temperature meltability, moldability tends to decrease. Therefore, the content of SiO ₂ is preferably 50 to 85%, 60 to 82%, 65 to 80%, 68 to 79%, particularly 70 to 78%.

Al ₂ O ₃ is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification. However, if the content of Al ₂ O ₃ is too large, low-expansion crystals such as β-spodumene are likely to precipitate due to phase transition, and the high-temperature viscosity becomes high, so that the meltability and moldability tend to decrease. Therefore, the content of Al ₂ O ₃ is preferably 0.1 to 15%, 0.5 to 10%, 1 to 9%, 2 to 8%, particularly 4 to 7%.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance. However, when the content of B ₂ O ₃ is too large, the Young's modulus, weather resistance tends to decrease. Therefore, the content of B ₂ O ₃ is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0 to 3%, particularly 0 to less than 1%.

P ₂ O ₅ is a component for generating crystal nuclei. However, when a large amount of P ₂ O ₅ is introduced, the glass is likely to undergo phase separation. Therefore, the content of P ₂ O ₅ is preferably 0 to 15%, 0.1 to 12%, 1 to 8%, particularly 1.5 to 4%.

Li ₂ O is a component that increases the Young's modulus and the coefficient of thermal expansion, is a component that lowers the high-temperature viscosity and remarkably increases the meltability, and is a component for further precipitating lithium disilicate and the like. However, when the content of Li 2 _O is too large, it tends to be much amount of alkali elution. Therefore, the content of Li ₂ O is preferably 2 to 20%, 4 to 17%, 5 to 15%, particularly 6 to 12%.

Na 2 _O is an ingredient enhances the thermal expansion coefficient and lower the high temperature viscosity, a component for enhancing significantly the melting property. Further, it is a component that contributes to the initial melting of the glass raw material. However, when the content of Na 2 _O is too large, it tends to be much amount of alkali elution. Therefore, the content of Na ₂ O is preferably 0 to 10%, 0 to 5%, 0 to 3%, particularly 0 to less than 1%.

K ₂ O is a component that increases the coefficient of thermal expansion, and is a component that lowers the viscosity at high temperature to remarkably increase the meltability and suppress the coarsening of the precipitated crystals. However, when the content of K 2 _O is too large, it tends to be much amount of alkali elution. Therefore, the content of K ₂ O is preferably 0 to 7%, 0 to 6%, 0.1 to 5%, 0.5 to 3%, particularly 1 to 2%. Note that when the precipitated crystal becomes coarse, it becomes difficult to reduce the total thickness deviation (TTV) by the polishing process.

MgO is a component that increases the Young's modulus and lowers the high-temperature viscosity to increase the meltability. However, when there is too much content of MgO, it will become easy to devitrify glass at the time of shaping | molding. Therefore, the content of MgO is preferably 0 to 10%, 0 to 7%, 0.1 to 4%, particularly 0.3 to 2%.

CaO is a component that lowers the high temperature viscosity and remarkably increases the meltability. Moreover, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the batch cost. However, if the content is too large, the glass tends to devitrify during molding. Therefore, the content of CaO is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.

SrO is a component that suppresses phase separation, and a component that suppresses the coarsening of precipitated crystals. However, if the content is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the content of SrO is preferably 0 to 5%, 0.1 to 4%, 0.5 to 3%, particularly 1 to 2%.

BaO is a component that suppresses the coarsening of the precipitated crystal, but if its content is too large, it becomes difficult to precipitate the crystal by heat treatment. Therefore, the content of BaO is preferably 0 to 5%, 0 to 4%, 0.1 to 3%, particularly 0.5 to 2%.

ZnO is a component that lowers the viscosity at high temperature and remarkably increases the meltability, and also suppresses the coarsening of the precipitated crystals. However, if the ZnO content is too large, the glass tends to devitrify during molding. Therefore, the content of ZnO is preferably 0 to 5%, 0 to 3%, 0.1 to 2%, particularly 0.2 to 1%.

ZrO ₂ is a component that enhances Young's modulus and weather resistance, and is a component for generating crystal nuclei. However, when a large amount of ZrO ₂ is introduced, the glass tends to be devitrified, and since the introduced raw material is hardly soluble, there is a possibility that undissolved foreign matter is mixed in the crystallized glass substrate. Therefore, the content of ZrO ₂ is preferably 0 to 10%, 0.1 to 9%, 1 to 8%, 2 to 7%, particularly 3 to 6%.

In addition to the above components, other components may be introduced as optional components. In addition, the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.

TiO ₂ is a component for generating crystal nuclei, and is a component for improving weather resistance and Young's modulus. However, the introduction of TiO ₂ in a large amount, the glass is colored, the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0 to 5%, 0 to 3%, particularly 0 to less than 1%.

Y ₂ O ₃ is a component that increases the Young's modulus of glass. However, Y ₂ O ₃ also has an effect of suppressing crystal growth. Therefore, the content of Y ₂ O ₃ is preferably 0 to 5%, 0 to 3%, particularly 0 to less than 1%.

Fe ₂ O ₃ is a component mixed as an impurity or a component that can be introduced as a fining agent component. However, if the content of Fe ₂ O ₃ is too large, there is a possibility that the ultraviolet transmission is reduced. That is, when the content of Fe ₂ O ₃ is too large, the adhesive layer, through a peeling layer, it is difficult to properly perform the adhesion and detachment of the processing substrate and the supporting crystallized glass substrate. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less. Note that “Fe ₂ O ₃ ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe ₂ O ₃ . Similarly, other polyvalent oxides are handled on the basis of the indicated oxide.

Nb ₂ O ₅ and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is more than 5%, particularly more than 1%, the batch cost may increase.

As ₂ O ₃ and Sb ₂ O ₃ act effectively as fining agents, but it is preferable to reduce this component as much as possible from an environmental point of view. The contents of As ₂ O ₃ and Sb ₂ O ₃ are preferably 1% or less, 0.5% or less, particularly preferably 0.1% or less, respectively, and it is desirable not to contain them substantially. Here, “substantially free of” refers to the case where the content of the explicit component in the composition is less than 0.05%.

SnO ₂ is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity. The content of SnO ₂ is preferably 0 to 1%, 0.01 to 1%, particularly 0.05 to 0.5%. When the content of SnO ₂ is too large, Sn-based heterogeneous crystals are likely to precipitate. Incidentally, when the content of SnO ₂ is too small, it becomes difficult to enjoy the above-mentioned effects.

As a fining agent, metal powders such as F, Cl, SO ₃ , C, Al, Si or the like may be introduced up to about 3% as long as the glass properties are not impaired. Further, CeO ₂ or the like can be introduced up to about 2%, but it is necessary to pay attention to a decrease in ultraviolet transmittance.

In the supported crystallized glass substrate of the present invention, the total thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, particularly 0.1 to less than 1 μm. The smaller the overall plate thickness deviation (TTV), the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible.

In the support crystallized glass substrate of the present invention, the warp amount is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, particularly 5 to 40 μm. The smaller the warp amount, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.

The support crystallized glass substrate of the present invention preferably has a substantially disk shape or wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed.

In the support crystallized glass substrate of the present invention, the roundness (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less. The smaller the roundness, the easier it is to apply to the semiconductor package manufacturing process. Here, “roundness” is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the support crystallized glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. As the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved. On the other hand, if the plate thickness is too thin, the strength of the support crystallized glass substrate itself is lowered, and it becomes difficult to perform the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.

The support crystallized glass substrate of the present invention preferably has a notch part (notch-shaped alignment part), and the deep part of the notch part is more preferably substantially circular or substantially V-groove in plan view. This makes it easier to fix the position of the support crystallized glass substrate by bringing a positioning member such as a positioning pin into contact with the notch portion of the support crystallized glass substrate. As a result, alignment of the support crystallized glass substrate and the processed substrate is facilitated. In particular, when the notch is formed on the processed substrate and the positioning member is brought into contact with the processed substrate, the alignment of the entire laminate is facilitated.

When the positioning member is brought into contact with the notch portion of the support crystallized glass substrate, the stress is easily concentrated on the notch portion, and the support crystallized glass substrate is easily damaged starting from the notch portion. In particular, when the support crystallized glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, in the support crystallized glass substrate of the present invention, it is preferable that all or part of the edge region where the surface of the notch portion and the end face intersect is chamfered. As a result, it is possible to effectively avoid damage starting from the notch portion.

In the support crystallized glass substrate of the present invention, all or part of the edge region where the surface and end face of the notch portion intersect is chamfered, and 50% of the edge region where the surface and end surface of the notch portion intersect. The above is preferably chamfered, more preferably 90% or more of the edge region where the surface of the notch portion intersects with the end surface is chamfered, and the edge region where the surface of the notch portion intersects with the end surface More preferably, all of the above are chamfered. The larger the chamfered area at the notch, the lower the probability of breakage starting from the notch.

The chamfering width in the front surface direction of the notch portion (the chamfering width in the rear surface direction is also the same) is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, 400 to 650 μm, particularly 500 to 600 μm. If the chamfering width in the surface direction of the notch portion is too small, the supporting crystallized glass substrate tends to be damaged starting from the notch portion. On the other hand, if the chamfering width in the surface direction of the notch portion is too large, the chamfering efficiency is lowered, and the manufacturing cost of the support crystallized glass substrate is likely to increase.

The chamfer width in the plate thickness direction of the notch portion (the total chamfer width of the front surface and the back surface) is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65% of the plate thickness, especially 40-60%. If the chamfer width in the plate thickness direction of the notch portion is too small, the supporting crystallized glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfer width in the plate thickness direction of the notch portion is too large, the external force tends to concentrate on the end surface of the notch portion, and the supporting crystallized glass substrate is likely to be damaged starting from the end surface of the notch portion.

The support crystallized glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface. When the ion exchange treatment is performed, the manufacturing cost of the support crystallized glass substrate increases. However, if the ion exchange processing is not performed, the manufacturing cost of the support crystallized glass substrate can be reduced. Further, if ion exchange treatment is performed, it becomes difficult to reduce the total thickness deviation (TTV) of the support crystallized glass substrate. However, if the ion exchange treatment is not carried out, it is easy to eliminate such a problem.

The method for producing the support crystallized glass substrate of the present invention will be described. First, glass raw materials are prepared so as to have a predetermined composition, and the obtained glass batch is melted at a temperature of 1550 to 1750 ° C. and then formed into a plate shape to obtain a crystalline glass substrate. Various methods can be adopted as the forming method. For example, a slot down method, a rollout method, a redraw method, a float method, an ingot molding method, etc. can be adopted.

Subsequently, a crystallized glass substrate can be produced by heat treatment at 700 to 1000 ° C. for 0.5 to 3 hours to generate crystal nuclei in the crystalline glass substrate and grow the crystal. If necessary, a crystal nucleus forming step for forming crystal nuclei on the crystalline glass substrate may be provided before the step of growing the crystal.

The laminate of the present invention is a laminate comprising at least a processed substrate and a support crystallized glass substrate for supporting the process substrate, wherein the support crystallized glass substrate is the above-mentioned support crystallized glass substrate. And Here, the technical characteristics (preferable structure and effect) of the laminate of the present invention overlap with the technical characteristics of the support crystallized glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the support crystallized glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Moreover, what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt | dissolve an adhesive layer in the manufacturing process of a semiconductor package, and the precision of a process can be improved. In addition, in order to fix a process substrate and a support crystallized glass substrate easily, an ultraviolet curable tape can also be used as an adhesive layer.

The laminate of the present invention further has a release layer between the processed substrate and the supporting crystallized glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting crystallized glass substrate and the adhesive layer. It is preferable to have a peeling layer between them. If it does in this way, it will become easy to peel a processed substrate from a support crystallized glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Moreover, resin which decomposes | disassembles by irradiating an infrared laser can be used for a peeling layer. A substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. can be added to the resin.

The peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling. In addition, when the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.

In the laminate of the present invention, the supporting crystallized glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supporting crystallized glass substrate are supported, even if the center positions of both are slightly separated, the edge of the processed substrate is unlikely to protrude from the supporting crystallized glass substrate.

The method of manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, a step of performing a processing process on the processed substrate, And the above-mentioned support crystallized glass substrate is used as the support crystallized glass substrate. Here, the technical characteristics (preferable structure and effect) of the manufacturing method of the semiconductor package of the present invention overlap with the technical characteristics of the support crystallized glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

The semiconductor package manufacturing method of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate. A laminate including a processed substrate and a support crystallized glass substrate for supporting the processed substrate has the material configuration described above.

It is preferable that the method for manufacturing a semiconductor package of the present invention further includes a step of transporting the stacked body. Thereby, the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.

In addition to the above processing, one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) is mechanically polished, and one surface of the processed substrate (usually supporting crystallization) Either a process of dry etching the surface opposite to the glass substrate) or a process of wet etching one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) may be used. In the semiconductor package manufacturing method of the present invention, a dimensional change (particularly, warpage) hardly occurs in the processed substrate, and the rigidity of the entire laminated body can be maintained. As a result, the above processing can be performed appropriately.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention. In FIG. 1, the laminate 1 includes a supporting crystallized glass substrate 10 and a processed substrate 11. The support crystallized glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11. A peeling layer 12 and an adhesive layer 13 are disposed between the support crystallized glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support crystallized glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminate 1 is laminated in the order of a support crystallized glass substrate 10, a release layer 12, an adhesive layer 13, and a processed substrate 11. The shape of the support crystallized glass substrate 10 is determined according to the processed substrate 11. In FIG. 1, the shapes of the support crystallized glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. An ultraviolet curable tape can also be used. After the support crystallized glass substrate 10 is peeled from the processed substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS. 2D and 2E, after separating the processed substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the support crystallized glass substrate 26 and the adhesive layer 25 are interposed. Adhere and fix. At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the supporting crystallized glass substrate 26 side. In this way, the laminate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support crystallized glass substrate 26 as needed. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the support crystallized glass substrate 26, the processed substrate 24 is cut into semiconductor chips 22 for use in a subsequent packaging process (FIG. 2 (g)).

Hereinafter, the present invention will be described based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.

Table 1 shows examples (samples Nos. 1 to 12) and comparative examples (samples Nos. 13 and 14) of the present invention.

First, a glass batch in which glass raw materials were prepared so as to have the composition shown in the table was placed in a platinum crucible and melted at 1600 ° C. for 4 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min. The obtained crystalline glass samples (Sample Nos. 1 to 12) were put into an electric furnace and held at 500 to 800 ° C. for 0.5 to 5 hours to generate crystal nuclei, and then 850 to 1000 ° C. For 1 to 5 hours to grow crystals in the glass. After growing the crystal, it was cooled to room temperature at a temperature lowering rate of 1 ° C./min. Sample No. 13 and 14 are not subjected to the crystallization treatment (the crystals are not precipitated even when the crystallization treatment is performed). For each sample obtained, precipitated crystals, average linear thermal expansion coefficient CTE _{30-220 °} C. in the temperature range of _{30-220 ° C.} , average linear thermal expansion coefficient CTE _{30-260 °} C. in the temperature range of _{30-260 ° C.} , 30- Average linear thermal expansion coefficient CTE in the temperature range of 300 ° C. _{30-300 ° C.} Average linear thermal expansion coefficient CTE in the temperature range of 30 to 380 ° C. _{30-380 ° C.} , Young's modulus, alkali elution Appearance and transmittance change were evaluated.

Precipitated crystals were evaluated with an X-ray diffractometer (RINT-2100 manufactured by Rigaku). The measurement range was 2θ = 10 to 60 °.

Average linear thermal expansion coefficient CTE in the temperature range of 30 to 220 ° C. _{30-220 ° C.} Average linear thermal expansion coefficient in the temperature range of 30 to 260 ° C. Average linear thermal expansion in the temperature range of 30 to 260 ° _C. and 30 to 300 ° C. Coefficient CTE _{30-300 ° C.} The average linear thermal expansion coefficient CTE _{30-380 °} C. in the temperature range of _{30-380 ° C.} is a value measured with a _dilatometer .

The Young's modulus E is a value measured by a resonance method.

Alkaline elution is evaluated as “◯” when the alkali elution amount measured in accordance with JIS R3502 is less than 1.5 mg, and “x” when it exceeds 1.5 mg / cm ² .

The appearance after the weather resistance test (HAST) was maintained for 8 hours at 135 ° C. and 95% humidity using a HAST tester PC-242HSR2 manufactured by Hirayama Seisakusho. The case where no change was observed was evaluated as “◯”, and the case where an appearance change was observed was evaluated as “x”.

The transmittance change after the weather resistance test (HAST) was measured by first measuring the average transmittance in the plate thickness direction and wavelength range of 250 to 1500 nm using a spectrophotometer (UV-3100 manufactured by Shimadzu Corporation). Was held at 135 ° C. and 95% humidity for 8 hours, and the average transmittance was measured under the same conditions. Finally, the decrease in average transmittance was calculated, and the value was less than 10%. The case was evaluated as “◯”, and the case of 10% or more was evaluated as “x”.

As is clear from Table 1, sample No. Nos. 1 to 12 had a high Young's modulus, a small amount of alkali elution, and good weather resistance. Therefore, sample no. Nos. 1 to 12 are considered to be suitable as support substrates used for supporting a processed substrate in a semiconductor package manufacturing process. On the other hand, sample No. Nos. 13 and 14 had a low Young's modulus, a large amount of alkali elution, and poor weather resistance.

Each sample of [Example 2] was produced as follows. First, the sample No. described in the table was used. After preparing the glass raw material so as to have a composition of 1 to 12, it is supplied to a glass melting furnace and melted at 1550 to 1650 ° C., and then the molten glass is poured into a ceramic mold and molded into a plate shape. did. About each obtained sample, it put into the electric furnace and was hold | maintained at 500 degreeC for 30 minutes, after producing | generating a crystal nucleus, it hold | maintained at 850 degreeC for 60 minutes, and the crystal was grown in the glass matrix. After growing the crystal, it was cooled to room temperature at a temperature lowering rate of 1 ° C./min. The obtained crystallized glass substrate (overall plate thickness deviation TTV approximately 5.5 μm) was processed to a thickness of φ300 mm × 0.7 mm, and both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the crystallized glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the crystallized glass substrate are polished while rotating the crystallized glass substrate and the pair of polishing pads together. did. During the polishing process, control was sometimes performed so that a part of the crystallized glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. With respect to each of the obtained crystallized glass substrates that had been subjected to polishing treatment, the total thickness deviation (TTV) and the amount of warpage were measured by SBW-331ML / d manufactured by Kobelco Kaken. As a result, the overall thickness deviation (TTV) was less than 1.0 μm, and the warpage amount was 35 μm or less.

The support crystallized glass substrate of the present invention is preferably used for supporting a processed substrate in a manufacturing process of a semiconductor package, but can be applied to applications other than this application. For example, taking advantage of high expansion, it can be applied as an alternative substrate for a high expansion metal substrate such as an aluminum alloy substrate, and can also be applied as an alternative substrate for a high expansion ceramic substrate such as a zirconia substrate or a ferrite substrate.

1, 27

Laminate

10, 26 Support crystallized

glass substrate

11, 24 Processed substrate 12

Peeling layer

13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealing material 28 Wiring 29 Solder bump

Claims

A support crystallized glass substrate for supporting a processed substrate,
Among lithium disilicate, α-cristobalite, α-quartz, one or more are deposited,
A support crystallized glass substrate having a Young's modulus of 80 GPa or more.
The supporting crystallized glass substrate according to claim 1, wherein the alkali elution amount is less than 1.5 mg.
The average transmittance in the plate thickness direction in the wavelength range 250-1500 nm before the weather resistance test (HAST) is X (%), and the average transmittance in the plate thickness direction in the wavelength range 250-1500 nm after the weather resistance test (HAST). 3. The support crystallized glass substrate according to claim 1, wherein a relationship of XY <10% is satisfied when Y is (%).
4. The average linear thermal expansion coefficient in a temperature range of 30 to 380 ° C. is more than 60 × 10 −7 / ° C. and not more than 195 × 10 −7 / ° C. The support crystallized glass substrate described.
The supporting crystallized glass substrate according to any one of claims 1 to 4, wherein a total thickness deviation (TTV) is 5 µm or less.
The composition is SiO 2 50 to 85%, Al 2 O 3 0.1 to 15%, B 2 O 3 0 to 10%, P 2 O 5 0 to 15%, Li 2 O 2 to 20% by mass%. , Na 2 O 0-10%, K 2 O 0-7%, MgO 0-10%, CaO 0-5%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, ZrO 2 0 The supporting crystallized glass substrate according to any one of claims 1 to 5, characterized by containing ~ 10%.
The supporting crystallized glass substrate according to any one of claims 1 to 6, wherein a thickness of the plate is less than 2.0 mm and a warpage amount is 60 µm or less.
A laminate comprising at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate,
A laminated body, wherein the supporting crystallized glass substrate is the supporting crystallized glass substrate according to any one of claims 1 to 7.
The laminate according to claim 8, wherein the processed substrate includes a semiconductor chip molded with at least a sealing material.
Preparing a laminate including at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate;
A process of performing processing on the processed substrate,
A method for producing a semiconductor package, comprising using the support crystallized glass substrate according to any one of claims 1 to 7 as the support crystallized glass substrate.
The method for manufacturing a semiconductor package according to claim 10, wherein the processed substrate includes a semiconductor chip molded with at least a sealing material.