+

WO2018167133A1 - Composant varistance à capacité accrue d'absorption de courant de surcharge - Google Patents

Composant varistance à capacité accrue d'absorption de courant de surcharge Download PDF

Info

Publication number
WO2018167133A1
WO2018167133A1 PCT/EP2018/056365 EP2018056365W WO2018167133A1 WO 2018167133 A1 WO2018167133 A1 WO 2018167133A1 EP 2018056365 W EP2018056365 W EP 2018056365W WO 2018167133 A1 WO2018167133 A1 WO 2018167133A1
Authority
WO
WIPO (PCT)
Prior art keywords
varistor
metallization
region
materials
different
Prior art date
Application number
PCT/EP2018/056365
Other languages
German (de)
English (en)
Inventor
Michael HOFSTÄTTER
Original Assignee
Epcos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Publication of WO2018167133A1 publication Critical patent/WO2018167133A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type

Definitions

  • the invention relates to varistor components which have an increased surge current capacity, and to methods for producing such components and to the use of two different varistor materials in a varistor component.
  • Varistor components are electrical components with a voltage-dependent electrical resistance.
  • a varistor device For small applied voltages, a varistor device has a relatively high electrical resistance. With increasing applied voltage, the resistance decreases with one
  • Voltage interval then decreases the electrical resistance by several orders of magnitude and can be considered at quasi voltages above this interval as electrically conductive.
  • Such varistor components can serve as protective elements in electrical or electronic circuits and protect other circuit elements from overvoltages.
  • varistor material Characteristics of a varistor material, which provides the desired current / voltage characteristics.
  • Common varistor materials often include sintered
  • a varistor component can be a
  • metallization layers may have a first external one Be connected electrode.
  • Other metallization layers may be connected to a second external electrode.
  • the z. B. can be connected to a ground potential
  • Varistor components are z. B. from the
  • a characteristic of a varistor component size is the so-called surge current capacity.
  • Surge current capacity is essentially a measure of the amount of electrical charge or a measure of the electrical power of a current pulse, which is to be derived. The lower the surge current capability, the higher the likelihood that the varistor device will be damaged upon activation.
  • the active volume of such a component is essentially that volume of varistor material or in the main body with the varistor material, in which a current flow at
  • the varistor device has a main body with a first region of a first varistor material and a region of a second varistor material.
  • Varistor material is from the first varistor material
  • the varistor device has
  • Metallization surfaces at interfaces between metal and the surrounding varistor material indicate particularly vulnerable positions within the device. At the points of the edges, the transfer of the charge to be derived from the metal of the metallization surfaces into the varistor material or from the varistor material into the metal of the metallization surfaces of the other polarity takes place. at repeated activity of a varistor device and
  • Varistor components have an increased surge current capacity and thus have an increased life. in the
  • the rest is also the change of the electrical
  • Phase boundary separates two adjacent areas.
  • the number of areas in the body can be two, three, four, five, six, seven or more.
  • the number of different varistor materials can also be two, three, four, five, six, seven or more.
  • the number of areas of the body is greater than or equal to the number of different varistor materials. Two adjoining areas in the
  • Main body have a total of two different varistor materials.
  • the first varistor material and the second varistor material may be materials having different thermal characteristics
  • a sintering temperature can be in the range around 1000 ° C.
  • the areas of the body can be arranged so that the material with the lower expansion coefficient after cooling is under pressure, while the material with the larger
  • Expansion coefficient has, and the area whose
  • Thermal energy causes a mechanical relaxation of the device, so that the risk of thermally induced stress cracks -. B. at the edges of
  • the at least two different varistor materials of the first and second regions can also be used in the so-called
  • Breakthrough field strength (also called varistor field strength) differ.
  • the breakdown field strength is in the
  • the electric field strength at which the varistor material begins to become conductive Essentially, the electric field strength at which the varistor material begins to become conductive.
  • a varistor material with lower breakdown field strength can be arranged. At locations of lower thermal stress, a higher breakdown field strength varistor material may be positioned.
  • the interior of a varistor component is generally more thermally stressed because dissipated Energy in the form of heat worse to the environment
  • Varistor material with lower breakdown field strength causes a greater thickness of the varistor material between the
  • Breakthrough field strength thus has a lower electrical (heat generation) performance. This heat is more in the
  • the surge current capacity can be further improved and the lifetime of the component can be increased.
  • the components are mechanically less stressed and therefore more robust. Based on a defined surge current capacity can be
  • the varistor device comprises three regions of at least two different varistor materials. At least two interfaces between different regions of the three regions are arranged in parallel.
  • the varistor component has an interface between two regions of different varistor materials.
  • the interface is arranged parallel to at least one metallization. So it is possible that the interfaces between
  • the varistor component has an interface between two regions of different varistor Materials includes.
  • the interface may be between two adjacent metallization.
  • Metallization surface has, at an interface between two areas of different varistor materials
  • Interfaces between different varistor materials do not limit the position of the metallization surfaces.
  • the location of the metallization areas does not limit the location of the interfaces between areas of different varistor materials.
  • the varistor device has a third region.
  • the third region comprises or consists of a varistor material.
  • the second area is arranged between the first area and the third area.
  • the three areas with the middle third area thus make a Sandwich construction made of different varistor materials.
  • Metallization surfaces can be arranged in each of the three areas and in all three areas. It is possible that the material of the first region and the material of the third region are the same.
  • Varistor components as suggested above may thus be so-called multilayer varistor components (MLV: multilayer varistor components).
  • MMV multilayer varistor components
  • Their basic body contains alternately arranged varistor layers and metallization surfaces.
  • the varistor component has a first
  • Contact electrode and a second contact electrode comprises. At least one metallization surface is the first
  • Metallization surface is connected to the second contact electrode.
  • the contact electrodes serve to interconnect the
  • Varistor device with an external circuit environment, eg. B. to protect against overvoltages.
  • the contact electrodes can be arranged at opposite ends of the varistor component. You can
  • Component would be functionless. It is possible that the different materials of the regions are in at least one material parameter
  • the material parameter can be selected from: coefficient of thermal expansion,
  • the varistor materials may be selected from varistor materials consisting of a zinc oxide, e.g. B. ZnO, with bismuth (Bi), or a zinc oxide with praseodymium (Pr) exist.
  • a zinc oxide e.g. B. ZnO
  • Bi bismuth
  • Pr zinc oxide with praseodymium
  • Other possible materials on which the varistor materials may be based are an iron oxide, e.g. B. Fe3Ü 4 or Fe 2 Ü3, a nickel oxide, z. As NiO or a cobalt oxide, for. B. CoO.
  • Iron oxide e.g. B. Fe3Ü 4 or Fe 2 Ü3, Snue 2, Ti0 2, a nickel oxide, z.
  • NiO and / or a cobalt oxide for. B. CoO can
  • a zirconium oxide, z. B. Zr0 2 or an alumina, for. B. Al 2 O 3 or a manganese oxide, for. B. MnO can more
  • Exemplary formulations would be: 95 mole percent ZnO, Sb 2 O 3 , B1 2 O 3 in the range between 0.5 and 5 mole percent, C0 3 O 4 ,
  • the varistor materials may also contain Y 2 O 3 in the range 0.05-2 mole percent. As materials for the metallization come
  • Metallization surfaces may thus comprise tungsten or consist of tungsten.
  • Ag, Pt, Pd, Cu, Ni, and also alloys such as e.g. AgPd can also be used as materials for the
  • Conductivity e.g. Aluminum, silver, gold, copper, platinum, palladium, nickel, tin and also alloys such as e.g. AgPt and the like come into question. It is possible that the contact electrodes via a solder layer with the
  • a method for manufacturing a varistor device with increased surge current capacity comprises the steps:
  • Varistor material different varistor material than a second area on or over the first area
  • the metallization surfaces can also be embedded at the location of the phase boundaries between the different regions of different materials.
  • Fig. 2 stack layers with metallization within individual areas.
  • 3 shows a layer stack with at least one
  • FIG. 5 shows a layer stack with an arbitrary orientation of metallization surfaces to the base of the device.
  • 6 shows a varistor component with contact electrodes.
  • 7 shows a varistor illumination device with five
  • FIG. 8 shows a varistor component in which a phase boundary between different regions also has a metallization surface at the same time.
  • FIG. 1 shows a schematic layer stack of a varistor component V, which is designed as a multilayer varistor component MLV.
  • the varistor component V has a
  • the Basic body GK with a first area Bl and a second area B2.
  • the first region Bl has a first varistor material Ml.
  • the second region B2 has a second varistor material M2.
  • Metallization surfaces MF are embedded in the main body GK.
  • Varistor layers VL are between the
  • FIG. 1 shows the possibility of the phase boundary
  • a varistor layer VL may comprise a single varistor material, and it may also be possible for a varistor layer VL to contain two sub-layers with different varistor materials, as shown between the two upper metallization surfaces MF.
  • FIG. 2 shows a layer stack of a varistor component V, in which the main body GK has three regions B1, B2, B3. At the lower end of the third region B3 is arranged. At the upper end of the first area Bl is arranged. In between, the second area B2 is arranged.
  • Each area can have its own varistor material, which differs at least from the varistor material of a directly adjacent area.
  • the materials Ml and M2 Therefore, they differ in at least one parameter.
  • the materials M2 and M3 differ in at least one parameter.
  • the materials Ml and M3 may be different. But it is also possible that the first area Bl and the third area B3 consists of the same varistor material.
  • FIG. 3 shows the possibility of a metallization surface MF at an interface between two different ones
  • phase boundary between the second region and the third region does not extend at the same height as a metallization surface, but between two
  • the layers of the metallization areas do not limit the layers of the interfaces.
  • the layers of the interfaces do not limit the positions of the metallization surfaces.
  • FIG. 4 shows that the orientation of boundary surfaces does not restrict the alignment of metallization surfaces.
  • FIG. 5 shows that the orientation of the component as a whole V or the alignment of interfaces between the first region and the second region does not force a specific orientation of the metallization surfaces MF.
  • Tops of components an excellent alignment with each other, for. B. have a parallel orientation to each other.
  • FIG. 6 shows the possibility of contact electrodes
  • one side may have a first electrode El and the preferably opposite side a second electrode E2, so that the varistor component V, for. B. as
  • Voltage protection element is connected to an external circuit environment. At least one, preferably several
  • Metallization surfaces MF1, MF2, MF3 are connected to the first electrode El.
  • One, but preferably a plurality of metallization surfaces MF4, MF5, MF6 are connected to the second electrode E2.
  • MF1, MF2, MF3 are connected to the first electrode El.
  • MF4, MF5, MF6 are connected to the second electrode E2.
  • Metallization surface is connected to both the first electrode El and the second electrode E2.
  • an electric current flows from a set of metallization surfaces, which are connected to one of the two contact electrodes, to the respective other set of metallization surfaces, here in the vertical direction through the varistor layers VL.
  • Edges K of the metallization surfaces MF are particularly at risk in conventional varistor components; In their vicinity, stress cracks can form and spread.
  • the usage different varistor materials in the same body of a varistor component reduces the risk of cracks, especially at critical areas such as edges K and especially edge areas of the body.
  • the uppermost regions Bl and the lowermost region B3 may comprise or consist of the same varistor material M1. This differs from the varistor material M2 of the second region B2.
  • the material M2 of the second region may have a higher coefficient of thermal expansion CTE than the material Ml of the regions Bl and B3.
  • CTE coefficient of thermal expansion
  • the second material of the second region relative to the material of the first and the third region is therefore under a tensile stress, while the first material of the first and the third region is under a compressive stress relative to the material of the second region.
  • the second varistor material M2 of the second region expands relatively stronger than the first material Ml of the first and the third region.
  • the strains are coupled in the.
  • the tensile stress builds up in the second material of the second region and, on the other hand, the
  • Compressive stress in the first material of the second and third range from.
  • the mechanical loads are thereby - and in particular relatively to the voltages in activated conventional devices - reduced.
  • FIG. 7 shows a possible embodiment in which a first area Bl, a third area B3 and a fifth area B5 consist of a first material M1.
  • Varistor material of the second region B2 and the fourth region B4 is a second varistor material M2.
  • the second and the fourth area represent thereby of the
  • Varistor device V represents.
  • the third area B3 represents the interior of the varistor device.
  • Breakthrough field strength in the third region B3, that is to say in the first material M1 is preferably lower than in the second varistor material M2.
  • the layer thickness in the second region and in the fourth region can be reduced and thus the electrical power density in the second and in the fourth region can be increased. Since the second and fourth regions have a reduced thermal resistance to the top and bottom of the device for delivering the heat to an external environment, the thermal load of the entire device is more homogeneous, resulting in a reduced susceptibility to error and improved homogeneity of the electrical
  • FIG. 8 again shows the possibility
  • varistor device the manufacturing method and the use are not limited by the technical details shown.
  • Varistor components can be additional layers, Metalltechnischs vom and varistor material layers, and have additional contact electrodes.
  • Manufacturing methods may include additional steps, particularly regarding the embedding of
  • Metallization layers in varistor material include.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

L'invention concerne un composant varistance à capacité accrue d'absorption de courant de surcharge . Le composant varistance présente à cette fin un corps principal présentant une première zone formée d'un premier matériau de varistance et une seconde zone formée d'un second matériau de varistance.
PCT/EP2018/056365 2017-03-16 2018-03-14 Composant varistance à capacité accrue d'absorption de courant de surcharge WO2018167133A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017105673.4A DE102017105673A1 (de) 2017-03-16 2017-03-16 Varistor-Bauelement mit erhöhtem Stoßstromaufnahmevermögen
DE102017105673.4 2017-03-16

Publications (1)

Publication Number Publication Date
WO2018167133A1 true WO2018167133A1 (fr) 2018-09-20

Family

ID=61683783

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/056365 WO2018167133A1 (fr) 2017-03-16 2018-03-14 Composant varistance à capacité accrue d'absorption de courant de surcharge

Country Status (2)

Country Link
DE (1) DE102017105673A1 (fr)
WO (1) WO2018167133A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018116221B4 (de) 2018-07-04 2022-03-10 Tdk Electronics Ag Vielschichtvaristor mit feldoptimiertem Mikrogefüge und Modul aufweisend den Vielschichtvaristor
DE102020122299B3 (de) 2020-08-26 2022-02-03 Tdk Electronics Ag Vielschichtvaristor und Verfahren zur Herstellung eines Vielschichtvaristors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6377439B1 (en) 1999-07-15 2002-04-23 Murata Manufacturing, Co. Electronic multilayer ceramic component
DE102004058410A1 (de) * 2004-12-03 2006-06-08 Epcos Ag Vielschichtbauelement mit ESD-Schutzelementen
US7167352B2 (en) 2004-06-10 2007-01-23 Tdk Corporation Multilayer chip varistor
US20090021340A1 (en) * 2005-03-11 2009-01-22 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic electronic component
US7541910B2 (en) 2006-05-25 2009-06-02 Sfi Electronics Technology Inc. Multilayer zinc oxide varistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107040A1 (de) * 2014-05-19 2015-11-19 Epcos Ag Elektronisches Bauelement und Verfahren zu dessen Herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6377439B1 (en) 1999-07-15 2002-04-23 Murata Manufacturing, Co. Electronic multilayer ceramic component
US7167352B2 (en) 2004-06-10 2007-01-23 Tdk Corporation Multilayer chip varistor
DE102004058410A1 (de) * 2004-12-03 2006-06-08 Epcos Ag Vielschichtbauelement mit ESD-Schutzelementen
US20090021340A1 (en) * 2005-03-11 2009-01-22 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic electronic component
US7541910B2 (en) 2006-05-25 2009-06-02 Sfi Electronics Technology Inc. Multilayer zinc oxide varistor

Also Published As

Publication number Publication date
DE102017105673A1 (de) 2018-09-20

Similar Documents

Publication Publication Date Title
EP2232600B1 (fr) Composant multicouche piézoélectrique
EP2118912B1 (fr) Composant multicouche et procédé de production d'un tel composant multicouche
DE4036997C2 (de) Monolithischer Varistor
EP2436051B1 (fr) Composant piézoélectrique
WO2007076849A1 (fr) Composant ceramique monolithique et son procede de fabrication
DE102006030858A1 (de) Überspannungsableiter
DE102006015723A1 (de) Mehrschichtiger Chipvaristor
DE102005026731B4 (de) Mehrschichtchipvaristor
WO2018167133A1 (fr) Composant varistance à capacité accrue d'absorption de courant de surcharge
DE10120517A1 (de) Elektrisches Vielschichtbauelement und Verfahren zu dessen Herstellung
DE2853134C2 (de) Keramikvaristor
EP1129493B1 (fr) Structure multicouche piezoceramique presentant une surface de section polygonale
EP2530689B1 (fr) Composant électrique multicouche et procédé de fabrication associé
EP1497838A1 (fr) Composant ptc et procedes de fabrication
WO2022013352A1 (fr) Condensateur multicouche
EP2568246B1 (fr) Dispositif de retenue pour composant céramique multicouche
EP2191483B1 (fr) Composant électrique multicouche
WO2002091408A1 (fr) Composant ceramique multicouche et son procede de production
EP1911052B1 (fr) Composant electrique
DE102013110978A1 (de) Keramischer Vielschichtkondensator

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18711536

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18711536

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载