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WO2018164160A1 - Module - Google Patents

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Publication number
WO2018164160A1
WO2018164160A1 PCT/JP2018/008682 JP2018008682W WO2018164160A1 WO 2018164160 A1 WO2018164160 A1 WO 2018164160A1 JP 2018008682 W JP2018008682 W JP 2018008682W WO 2018164160 A1 WO2018164160 A1 WO 2018164160A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
main surface
module
sealing resin
resin layer
Prior art date
Application number
PCT/JP2018/008682
Other languages
English (en)
Japanese (ja)
Inventor
裕太 森本
野村　忠志
元彦 楠
了 小松
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2018164160A1 publication Critical patent/WO2018164160A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a module in which a component that generates heat is mounted on a substrate and has a heat dissipation structure.
  • heat dissipation measures may be taken in order to suppress adverse effects on the components due to heat generation.
  • a module with such a heat dissipation measure for example, there is a semiconductor device 100 described in Patent Document 1 shown in FIG.
  • the semiconductor device 100 is held on the semiconductor element mounting surface 101a of the multilayer wiring substrate 101 by the multilayer wiring substrate 101, the conductive leads 102, and the conductive leads 102, and has a circuit formation surface 103a and an anti-circuit formation surface 103b. Except for the semiconductor element 103 and the anti-circuit formation surface 103b of the semiconductor element 103, the conductive lead 102 and the resin 104 provided to seal the semiconductor element 103 are bonded to the anti-circuit formation surface 103b of the semiconductor element 103.
  • the heat radiation fin 105 is provided. The heat dissipation fin 105 is used to improve the heat dissipation effect of the semiconductor device 100.
  • the semiconductor device 100 since the heat dissipation fin 105 protrudes from the surface opposite to the surface of the resin 104 facing the semiconductor element mounting surface 101a, the semiconductor device 100 becomes large. is there.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a module capable of realizing a low profile while maintaining sufficient heat dissipation.
  • a module of the present invention includes a substrate, a first component that generates heat mounted on one main surface of the substrate, and is mounted on the one main surface.
  • Heat transfer connected to the second component lower than the temperature rise during operation of the first component, the opposite surface opposite to the mounting surface of the first component, and the opposite surface opposite to the mounting surface of the second component
  • the heat transfer member is provided to connect the opposite surface of the first component and the opposite surface of the second component, for example, the heat transfer member is disposed only on the opposite surface of the first component.
  • the capacity of the heat transfer member can be increased as compared with the case where this is done, and thereby sufficient heat dissipation can be obtained.
  • the first component is connected to the second component via the heat transfer member, the heat generated by the first component can be released from the heat transfer member to the second component, thereby further improving the heat dissipation effect. Improvement is achieved.
  • the height from one main surface to the highest surface of a heat-transfer member is below the height from one main surface to the highest surface of a sealing resin layer, the height reduction of a module is achieved.
  • the highest surface of the heat transfer member may be exposed from the highest surface of the sealing resin layer. According to this configuration, since the heat transfer member is exposed from the sealing resin layer, heat can be released to the outside from the exposed portion of the heat transfer member, thereby further improving the heat dissipation effect.
  • the height from the one main surface to the opposite surface of the first component is different from the height from the one main surface to the opposite surface from the second component, and the heat transfer member is connected to the first component and the first component.
  • the thickness of the heat transfer member on the first component and the second component so that the highest surface of the heat transfer member is substantially parallel to the one main surface when connected to the second component.
  • the thickness of the heat transfer member may be set. According to this configuration, the first component and the second component having different heights can be connected, and the heat generated by the first component can be released to the second component having a different height from the first component.
  • a heat conductive paste may be used as the heat transfer member. According to this configuration, by using the heat conductive paste as the heat transfer member, the first component and the second component having different heights can be easily connected, and the heat generated by the first component is the first component. It is possible to escape to the second parts having different heights.
  • the heat transfer member may be a wiring board, and may further include a connection member that connects the board and the wiring board. According to this configuration, since the heat generated by the first component can be released to the substrate via the wiring substrate and the connection member, the heat dissipation effect can be further improved. Further, since the wiring board can be used as both a heat radiating member and a wiring member, the module can be reduced in size.
  • a shield layer that covers at least the surface of the sealing resin layer and the side surface of the substrate may be further provided. According to this configuration, the heat generated by the first component can be released from the shield layer to the substrate, thereby further improving the heat dissipation effect.
  • the heat transfer member is provided to connect the opposite surface of the first component and the opposite surface of the second component, for example, the heat transfer member is disposed only on the opposite surface of the first component.
  • the capacity of the heat transfer member can be increased as compared with the case where this is done, and thereby sufficient heat dissipation can be obtained.
  • the first component is connected to the second component via the heat transfer member, the heat generated by the first component can be released from the heat transfer member to the second component, thereby further improving the heat dissipation effect. Improvement is achieved.
  • the height from one main surface to the highest surface of a heat-transfer member is below the height from one main surface to the highest surface of a sealing resin layer, the height reduction of a module is achieved.
  • (A) is sectional drawing of the module which concerns on the modification 1 of 5th Embodiment of this invention
  • (b) is sectional drawing of the module which concerns on the modification 2 of 5th Embodiment of this invention
  • (c ) Is a cross-sectional view of a module according to Modification 3 of the fifth embodiment of the present invention. It is sectional drawing of the conventional module.
  • FIG. 1 is a cross-sectional view of the module 1 according to the first embodiment.
  • the module 1 according to the first embodiment is mounted on, for example, a mother board of an electronic device.
  • the module 1 includes a substrate 2 having a land electrode 8 formed on one main surface 2a, and a first component 3 and a first component 3 mounted on the one main surface 2a so that connection terminals are connected to the land electrode 8 by solder 9.
  • the two components 4, the opposite surface (upper surface 3 a) opposite to the mounting surface of the first component 3, and the opposite surface (upper surface 4 a) opposite to the mounting surface of the second component 4 are connected via the adhesive member 5.
  • a sealing resin layer 7 for sealing the one main surface 2a, the first component 3, the second component 4, and the metal block 6.
  • the substrate 2 is formed of, for example, low temperature co-fired ceramics or glass epoxy resin.
  • a plurality of land electrodes 8 are formed on one main surface 2 a of the substrate 2, a plurality of external electrodes (not shown) are formed on the other main surface 2 b, and a plurality of ground electrodes and a plurality of ground electrodes are formed on the surface layer and the inner layer of the substrate 2.
  • a wiring electrode, a plurality of via conductors, and the like are formed. Each ground electrode is formed so as to be exposed from the side surface of the substrate 2, for example.
  • Each land electrode, each external electrode, each ground electrode, and each wiring electrode are each formed of a metal generally employed as an electrode such as Cu, Ag, or Al.
  • Each via conductor is formed of a metal such as Ag or Cu.
  • the first component 3 is a component that generates heat, and examples of the first component 3 include active components such as an IC and a power amplifier.
  • the first component 3 is mounted on the one main surface 2 a of the substrate 2 by connecting the connection terminals to the land electrodes 8 formed on the one main surface 2 a of the substrate 2 using the solder 9.
  • the second component 4 is a component that does not generate heat compared to the first component 3, and has a temperature rise due to heat generation during operation that is lower than the temperature rise due to heat generation during operation of the first component 3.
  • Passive parts such as The second component 4 is mounted on the one main surface 2 a of the substrate 2 by connecting the connection terminals to the land electrodes 8 formed on the one main surface 2 a of the substrate 2 using the solder 9.
  • the height up to the opposite surface (hereinafter referred to as “upper surface”) 4a opposite to the mounting surface 4 is the same.
  • the upper surface 3a of the first component 3 and the upper surface 4a of the second component 4 are on the same plane.
  • the metal block 6 is placed from the upper surface 3a of the first component 3 to the upper surface 4a of the second component 4 by being bonded to the upper surface 3a of the first component 3 and the upper surface 4a of the second component 4 by the adhesive member 5.
  • the metal block 6 connects the first component 3 and the second component 4 via the adhesive member 5. That is, one metal block is in contact with both the first part 3 and the second part 4.
  • the metal block 6 is formed by inserting the module 1 from a direction perpendicular to the opposite surface (hereinafter referred to as “upper surface”) 7 a opposite to the opposite surface facing the one main surface 2 a of the sealing resin layer 7.
  • the metal block 6 is a metal plate such as a plate-like copper plate, and conducts heat.
  • the adhesive member 5 is, for example, a heat conductive adhesive or solder that conducts heat. For this reason, the heat generated by the first component 3 can be released to the second component 4 via the adhesive member 5, the metal block 6, and the adhesive member 5.
  • the metal block 6 corresponds to the “heat transfer member” of the present invention.
  • the metal block 6 is mounted when the metal block 6 is mounted.
  • the thickness of the metal block 6 is changed between the first region on the first part 3 and the second region on the second part 4 so that the upper surface 6a of the member 6 is substantially parallel to the one main surface 2a, or
  • the thickness of the adhesive member 5 may be changed between the first region on the first component 3 and the second region on the second component 4.
  • a material having high thermal conductivity such as AIN may be used as the heat transfer member.
  • AIN a material having high thermal conductivity such as AIN
  • a heat conductive sheet may be provided, or a metal film may be provided from the upper surface 3a of the first component 3 to the upper surface 4a of the second component 4 by plating or sputtering.
  • the sealing resin layer 7 is sealed so as to cover the one main surface 2 a of the substrate 2, the first component 3, the second component 4, and the metal block 6.
  • the sealing resin layer 7 has an opposite surface (hereinafter, referred to as “upper surface”) 6 a opposite to the opposing surface facing the first component 3 and the second component 4 of the metal block 6. Covering. That is, the height from the one main surface 2a to the upper surface 6a of the metal block 6 is less than the height from the one main surface 2a to the upper surface 7a of the sealing resin layer 7, and the metal block 6 is the sealing resin layer 7. It is buried in.
  • the sealing resin layer 7 can be formed of a resin generally employed as a sealing resin such as an epoxy resin containing a silica filler.
  • a filler with high heat conductivity such as an alumina filler, can also be used for high heat conduction.
  • the upper surface 7a of the sealing resin layer 7 corresponds to “the highest surface of the sealing resin layer” in the present invention
  • the upper surface 6a of the metal block 6 corresponds to “the highest surface of the heat transfer member” in the present invention. .
  • Module manufacturing method Next, a method for manufacturing the module 1 will be described. In the first embodiment, after an assembly of a plurality of modules 1 is formed, the module 1 is manufactured by being separated into pieces.
  • a plurality of land electrodes 8 are formed on one main surface 2a, a plurality of external electrodes are formed on the other main surface 2b, and a plurality of ground electrodes, a plurality of wiring electrodes, a plurality of ground electrodes, An assembly of the substrate 2 on which a plurality of via conductors and the like are formed is prepared.
  • Each land electrode 8, each external electrode, each ground electrode, and each wiring electrode can be formed by screen printing a conductive paste containing a metal such as Cu, Ag, or Al.
  • Each via conductor can be formed by a well-known method after forming a via hole using a laser or the like.
  • the first component 3 and the second component 4 are mounted on the one main surface 2a of the substrate 2 using a known surface mounting technique.
  • the solder 9 is formed on the desired land electrode 8 of the land electrodes 8 of the substrate 2, and the first component 3 and the land 9 are formed on the corresponding land electrode 8 of the land electrodes 8 on which the solder 9 is formed.
  • a reflow process is performed. Note that the assembly of the substrates 2 is cleaned as necessary after the reflow process.
  • the adhesive member 5 is applied to each of the upper surface 3 a of the first component 3 and the upper surface 4 a of the second component 4.
  • the metal block 6 is arranged on the upper surface 3a of the first component 3 and the upper surface 4a of the second component 4 to which the adhesive member 5 is applied.
  • the metal block 6 is a metal plate such as a plate-like copper plate, and conducts heat.
  • the adhesive member 5 is, for example, a heat conductive adhesive or solder that conducts heat.
  • the sealing resin is applied to the one main surface 2a of the substrate 2 so as to cover the one main surface 2a of the substrate 2, the first component 3 and the second component 4 mounted on the one main surface 2a, and the metal block 6.
  • Layer 7 is formed.
  • a transfer mold method, a compression mold method, a liquid resin method, a sheet resin method, or the like can be used.
  • a general epoxy resin containing silica filler can be used for the sealing resin layer 7.
  • an epoxy resin containing a filler having a high thermal conductivity such as an alumina filler can be used for the sealing resin layer 7.
  • plasma cleaning of the substrate 2 is performed as necessary.
  • the module 1 is separated into pieces by a known method such as dicer or laser processing.
  • the metal block 6 is provided so as to connect the upper surface 3 a of the first component 3 and the upper surface 4 a of the second component 4 via the adhesive member 5. For this reason, for example, when the module 1 is viewed from a direction perpendicular to the upper surface 7 a of the sealing resin layer 7, a heat transfer member having the same size as the upper surface 3 a of the first component 3 is disposed on the upper surface 3 a of the first component 3. Compared to the case, the capacity of the metal block 6 can be increased, thereby improving the heat dissipation effect.
  • the first component 3 is connected to the second component 4 via the adhesive member 5 and the metal block 6, the heat generated by the first component 3 is transmitted via the adhesive member 5, the metal block 6 and the adhesive member 5.
  • the second component 4 can be escaped, thereby further improving the heat dissipation effect.
  • the stability of the module operation is improved in addition to the heat dissipation effect.
  • the metal block 6 is embedded in the sealing resin layer 7, the module 1 can be reduced in height.
  • FIG. 2 is a cross-sectional view of the module 1a according to the second embodiment.
  • the module 1a according to the second embodiment differs from the module 1 according to the first embodiment described with reference to FIG. 1 in that the upper surface 6a of the metal block 6 is exposed from the sealing resin layer 20 as shown in FIG. This is the point. Since other configurations are the same as those of the module 1 according to the first embodiment, the description thereof is omitted by giving the same reference numerals.
  • the sealing resin layer 20 is sealed so as to cover the one main surface 2 a of the substrate 2, the first component 3, the second component 4, and the metal block 6 except for the upper surface 6 a of the metal block 6.
  • the upper surface 6 a of the metal block 6 is exposed from the sealing resin layer 20. That is, the height from the one main surface 2a to the upper surface 6a of the metal block 6 is the opposite surface (hereinafter referred to as “upper surface”) from the one main surface 2a to the opposite surface facing the one main surface 2a of the sealing resin layer 20.
  • the metal block 6 is embedded so that the upper surface 6a of the metal block 6 is exposed from the upper surface 20a of the sealing resin layer 20.
  • the sealing resin layer 20 can be formed of a resin that is generally employed as a sealing resin such as an epoxy resin containing a silica filler. Moreover, a filler with high heat conductivity, such as an alumina filler, can also be used for high heat conduction.
  • the sealing resin layer 20 can be formed as follows, for example.
  • One main surface 2a of the substrate 2, the first component 3 and the second component 4 mounted on the one main surface 2a, and the metal block 6 are covered with a sealing resin layer ( (Corresponding to the sealing resin layer 7 in FIG. 1).
  • a sealing resin layer (Corresponding to the sealing resin layer 7 in FIG. 1).
  • resin is removed, and this removal is performed until the upper surface 6a of the metal block 6 is exposed,
  • the sealing resin layer 20 is formed.
  • a UV laser, a CO 2 laser, a Green laser, or the like can be used as the laser.
  • a known grinding method such as polishing may be used instead of laser irradiation.
  • the upper surface 20a of the sealing resin layer 20 corresponds to “the highest surface of the sealing resin layer” in the present invention
  • the upper surface 6a of the metal block 6 corresponds to “the highest surface of the heat transfer member” in the present invention.
  • the same effect as that of the module 1 of the first embodiment can be obtained, and the upper surface 6a of the metal block 6 is exposed from the upper surface 20a of the sealing resin layer 20, so that the metal block Heat can be released from the exposed portion 6 to the outside, thereby further improving the heat dissipation effect.
  • FIG. 3 is a cross-sectional view of the module 1b according to the third embodiment.
  • the module 1b according to the third embodiment is different from the module 1 according to the first embodiment described with reference to FIG. 1 in that the metal block 6 is replaced with a wiring board 30 as shown in FIG. This is that a plurality of connection members 31 for connecting the substrate 2 are provided. Since other configurations are the same as those of the module 1 according to the first embodiment, the description thereof is omitted by giving the same reference numerals.
  • the wiring board 30 is formed of, for example, low temperature co-fired ceramics or glass epoxy resin.
  • a plurality of electrodes (land electrodes and the like) (not shown) are formed on the one main surface 30a and the other main surface 30b of the wiring board 30, and a plurality of ground electrodes, a plurality of wiring electrodes 32, In addition, a plurality of via conductors are formed.
  • various electrodes of the wiring board 30 can be connected between components (for example, And between the first component 3 and the second component 4).
  • the other main surface 30 b of the wiring board 30 is bonded to the upper surface 3 a of the first component 3 by the adhesive member 5 and is bonded to the upper surface 4 a of the second component 4 by the adhesive member 5. It is placed from 3 a to the upper surface 4 a of the second component 4. Thereby, the wiring board 30 connects the first component 3 and the second component 4 via the adhesive member 5.
  • the wiring board 30 includes, for example, the first region overlapping the upper surface 3a of the first component 3 and the upper surface 4a of the second component 4 when viewed from the direction perpendicular to the upper surface 7a of the sealing resin layer 7. It exists in the area
  • the wiring board 30 corresponds to the “heat transfer member” of the present invention.
  • connection member 31 is connected to one main surface 2 a of the substrate 2 and is connected to the other main surface 30 b of the wiring substrate 30.
  • Each connection member 31 is for transmitting the heat generated by the first component 3 from the wiring board 30 to the board 2 and is, for example, a metal such as copper that conducts heat.
  • the connection member 31 may also have a function of electrically connecting the wiring board 30 and the board 2.
  • you may change a material for every connection member, such as a part of connection member 31 being an insulating material.
  • it is good also as a structure which has a some electrically conductive part mutually insulated by the insulation part, combining a metal material and an insulating material in the inside of one connection member 31.
  • the connection member 31 may have a columnar shape, a flat plate shape, a bent plate shape, or the like.
  • the sealing resin layer 7 is sealed so as to cover the one main surface 2 a of the substrate 2, the first component 3, the second component 4, the wiring substrate 30, and each connection member 31.
  • the sealing resin layer 7 covers one main surface 30 a of the wiring substrate 30. That is, the height from the one main surface 2a to the one main surface 30a of the wiring substrate 30 is less than the height from the one main surface 2a to the upper surface 7a of the sealing resin layer 7, and the wiring substrate 30 is made of the sealing resin.
  • the upper surface 7a of the sealing resin layer 7 corresponds to the “highest surface of the sealing resin layer” of the present invention
  • the one main surface 30a of the wiring board 30 corresponds to the “highest surface of the heat transfer member” of the present invention. Equivalent to.
  • the wiring board 30 is provided so as to connect the upper surface 3a of the first component 3 and the upper surface 4a of the second component 4 via the adhesive member 5, for example,
  • the module 1 b is viewed from a direction perpendicular to the upper surface 7 a of the sealing resin layer 7, compared to the case where a heat transfer member having the same size as the upper surface 3 a of the first component 3 is disposed on the upper surface 3 a of the first component 3.
  • the capacity of the wiring board 30 can be increased, thereby improving the heat dissipation effect.
  • the first component 3 is connected to the second component 4 via the adhesive member 5 and the wiring substrate 30, the heat generated by the first component 3 is transmitted via the adhesive member 5, the wiring substrate 30 and the adhesive member 5.
  • the second component 4 can be escaped, thereby further improving the heat dissipation effect.
  • the stability of the module operation is improved in addition to the heat dissipation effect.
  • the first component 3 is connected to the substrate 2 via the adhesive member 5, the wiring substrate 30 and the connection member 31, the heat generated by the first component 3 is generated by the adhesive member 5, the wiring substrate 30 and the connection member 31.
  • the heat dissipation effect can be further improved.
  • the wiring board 30 is embedded in the sealing resin layer 7, the module 1b can be reduced in height.
  • the wiring board 30 can be used as both a heat radiating member and a wiring member, the module 1b can be downsized.
  • FIG. 4 is a cross-sectional view of a module 1c according to Modification 1 of the third embodiment.
  • the module 1c according to the first modification of the third embodiment is different from the module 1b according to the third embodiment described with reference to FIG. 3 in that the one main surface 30a of the wiring board 30 is sealed as shown in FIG. It is a point exposed from the stop resin layer 20. Since the other configuration is the same as that of the module 1b according to the third embodiment, the description thereof is omitted by giving the same reference numerals.
  • the sealing resin layer 20 is sealed so as to cover the one main surface 2 a of the substrate 2, the first component 3, the second component 4, and the wiring substrate 30 except for the one main surface 30 a of the wiring substrate 30.
  • the one main surface 30 a of the wiring substrate 30 is exposed from the sealing resin layer 20. That is, the height from the one main surface 2a to the one main surface 30a of the wiring board 30 is the same as the height from the one main surface 2a to the upper surface 20a of the sealing resin layer 20, and the wiring board 30 has the one main surface.
  • the surface 30 a is embedded so as to be exposed from the upper surface 20 a of the sealing resin layer 20.
  • the upper surface 20a of the sealing resin layer 20 corresponds to “the highest surface of the sealing resin layer” in the present invention
  • the one main surface 30a of the wiring board 30 corresponds to “the highest surface of the heat transfer member” in the present invention. Equivalent to.
  • the same effect as that of the module 1b of the third embodiment can be obtained, and the one main surface 30a of the wiring board 30 is exposed from the upper surface 20a of the sealing resin layer 20. Therefore, heat can be released to the outside from the exposed portion of the wiring board 30, thereby further improving the heat dissipation effect.
  • FIG. 5 is a cross-sectional view of the module 1d according to the fourth embodiment.
  • the module 1d according to the fourth embodiment is different from the module 1 according to the first embodiment described with reference to FIG. 1 in that the height of the first component 3 and the second component 40 is high as shown in FIG.
  • the metal blocks 6 that connect the first component 3 and the second component 40 are replaced with the heat conductive paste 41, and the heat conductive paste 41 is exposed from the sealing resin layer 42. Since other configurations are the same as those of the module 1 according to the first embodiment, the description thereof is omitted by giving the same reference numerals.
  • the second component 40 is a component that does not generate heat compared to the first component 3 and has a temperature rise due to heat generation during operation that is lower than the temperature rise due to heat generation during operation of the first component 3.
  • Passive parts such as The second component 40 is mounted on the one main surface 2 a of the substrate 2 by connecting the connection terminals to the land electrodes 8 formed on the one main surface 2 a of the substrate 2 using the solder 9.
  • the heat conductive paste 41 is provided from the upper surface 3a of the first component 3 to the upper surface 40a of the second component 40 so as to contact the upper surface 3a of the first component 3 and to contact the upper surface 40a of the second component 40. .
  • the heat conductive paste 41 connects the first component 3 and the second component 40.
  • the heat conductive paste 41 is, for example, the first component 3 when viewed from the direction perpendicular to the opposite surface (upper surface 42a) opposite to the opposite surface facing the one main surface 2a of the sealing resin layer 42 when viewed from the module 1d.
  • the first region overlaps the upper surface 3a of the second part 40
  • the second region overlaps the upper surface 40a of the second component 40, and the region including the region between the first region and the second region.
  • the heat conductive paste 41 is a metal paste such as an Ag paste that conducts heat.
  • the heat conductive paste 41 corresponds to the “heat transfer member” of the present invention.
  • the sealing resin layer 42 is sealed so as to cover the one main surface 2 a of the substrate 2, the first component 3, the second component 40, and the heat conductive paste 41 except for the upper surface 41 a of the heat conductive paste 41.
  • the upper surface 41 a of the heat conductive paste 41 is exposed from the sealing resin layer 42. That is, the height from the one main surface 2a to the upper surface 41a of the heat conductive paste 41 is the same as the height from the one main surface 2a to the upper surface 42a of the sealing resin layer 42, and the heat conductive paste 41 has its upper surface. 41 a is embedded so as to be exposed from the upper surface 42 a of the sealing resin layer 42.
  • the sealing resin layer 42 can be formed of a resin generally employed as a sealing resin such as an epoxy resin containing a silica filler. Moreover, a filler with high heat conductivity, such as an alumina filler, can also be used for high heat conduction.
  • the upper surface 42a of the sealing resin layer 42 corresponds to “the highest surface of the sealing resin layer” of the present invention
  • the upper surface 41a of the heat conductive paste 41 corresponds to “the highest surface of the heat transfer member” of the present invention.
  • Module manufacturing method Next, a method for manufacturing the module 1d will be described.
  • the module 1d is manufactured by being separated into pieces.
  • an assembly of the substrates 2 is prepared, and the first component 3 and the second component 40 are attached to the one main surface 2a of the substrate 2 using a known surface mounting technique.
  • a temporary sealing resin layer (on the one main surface 2a of the substrate 2 is covered so as to cover the one main surface 2a of the substrate 2 and the first component 3 and the second component 40 mounted on the one main surface 2a.
  • a sealing resin layer that becomes the sealing resin layer 42 is formed by removing a predetermined portion of the resin.
  • the temporary sealing resin is viewed from the direction perpendicular to the one main surface 2a so that the upper surface 3a of the first component 3 is exposed and the upper surface 40a of the second component 40 is exposed.
  • the resin is removed by performing laser irradiation or the like on the region from the upper surface 3a of the first component 3 to the upper surface 40a of the second component 40 of the layer.
  • the sealing resin layer 42 is formed.
  • the resin to be removed The resin is removed so as not to reach the one main surface 2a of the substrate 2.
  • a UV laser, a CO 2 laser, a Green laser, or the like can be used as the laser.
  • the heat conductive paste 41 is filled in the portion where the resin is removed, and the heat conductive paste 41 is cured.
  • the heat conductive paste 41 is a metal paste such as an Ag paste that conducts heat.
  • the module 1d is separated into pieces by a known method such as dicer or laser processing.
  • the heat conductive paste 41 is provided so as to connect the upper surface 3a of the first component 3 and the upper surface 40a of the second component 40, for example, the upper surface of the sealing resin layer 42.
  • the capacity of the heat conductive paste 41 is larger than that in the case where the heat transfer member having the same size as the upper surface 3a of the first component 3 is disposed on the upper surface 3a of the first component 3. This can increase the heat dissipation effect.
  • the first component 3 is connected to the second component 40 via the heat conductive paste 41, the heat generated by the first component 3 can be released to the second component 40 via the heat conductive paste 41.
  • the heat dissipation effect can be further improved.
  • the heat conductive paste 41 is embedded in the sealing resin layer 42, the height of the module 1d can be reduced. Further, by using the heat conductive paste 41, the first component 3 and the second component 40 having different heights can be easily connected, and the heat generated by the first component 3 is heightened with the first component 3. It is possible to escape to different second parts 40.
  • the first component 3 that generates heat is taller than the second component 40 that does not generate heat compared to the first component 3, but the contents of the fourth embodiment also apply to the reverse case. be able to.
  • FIG. 6 is a cross-sectional view of the module 1e according to the fifth embodiment.
  • the module 1e according to the fifth embodiment differs from the module 1 according to the first embodiment described with reference to FIG. 1 in that the surface of the sealing resin layer 7 (the sealing resin before shielding) as shown in FIG.
  • the shield layer 15 is provided so as to cover the exposed portion of the layer 7 and the side surface of the substrate 2. Since other configurations are the same as those of the module 1 according to the first embodiment, the description thereof is omitted by giving the same reference numerals.
  • the shield layer 15 is provided so as to cover the surface of the sealing resin layer 7 (exposed portion of the sealing resin layer 7 before shielding) and the side surface of the substrate 2.
  • the shield layer 15 reduces the unwanted electromagnetic waves radiated from the external device from reaching the first component 3, the second component 4 and the wiring electrodes of the module 1e, or the first component 3 and the second component 2 of the module 1e. This is to reduce the leakage of unnecessary electromagnetic waves radiated from the component 4 and each wiring electrode to the outside. Further, the shield effect can be improved by contacting the shield layer 15 with a ground electrode (not shown) exposed from the side surface of the substrate 2.
  • the shield layer 15 is, for example, a multilayer structure having an adhesion layer laminated on the surface of the sealing resin layer 7 and the side surface of the substrate 2, a conductive layer laminated on the adhesion layer, and a corrosion-resistant layer laminated on the conductive layer. Can be formed.
  • the adhesion layer is provided to increase the adhesion strength between the conductive layer and the sealing resin layer 7 or the like, and can be formed of a metal such as SUS, for example.
  • the conductive layer is a layer that bears a substantial shielding function of the shield layer 15 and can be formed of any one of Cu, Ag, and Al, for example.
  • the conductive layer itself is not limited to a single material, and may have a multilayer structure in which a plurality of materials are stacked.
  • the corrosion resistant layer is provided to prevent the conductive layer from being corroded or scratched, and can be formed of, for example, SUS.
  • a sputtering method, a vapor deposition method, a paste coating method, or the like can be used to form the shield layer 15.
  • the same effects as those of the module 1 of the first embodiment can be obtained, and the heat generated by the first component 3 can be released from the shield layer 15 to the substrate 2, thereby radiating heat.
  • the effect is further improved.
  • FIG. 7A is a cross-sectional view of a module 1f according to Modification 1 of the fifth embodiment.
  • the module 1f in Modification 1 of the fifth embodiment is similar to the module 1a of the second embodiment in that the surface of the sealing resin layer 20 (exposed portion of the sealing resin layer 20 before shielding) and the upper surface 6a of the metal block 6 ( The shield layer 15 is provided so as to cover the exposed portion of the metal block 6 before shielding and the side surface of the substrate 2.
  • FIG. 7B is a cross-sectional view of a module 1g according to Modification 2 of the fifth embodiment.
  • the module 1g in Modification 2 of the fifth embodiment covers the surface of the sealing resin layer 7 (the exposed portion of the sealing resin layer 7 before shielding) and the side surface of the substrate 2 on the module 1b of the third embodiment.
  • the shield layer 15 is provided.
  • FIG.7 (c) is sectional drawing of the module 1h which concerns on the modification 3 of 5th Embodiment.
  • the module 1h in the third modification of the fifth embodiment is similar to the module 1c of the first modification of the third embodiment in that the surface of the sealing resin layer 20 (exposed portion of the sealing resin layer 20 before shielding) and the wiring board 30 are used.
  • the shield layer 15 is provided so as to cover one main surface 30a (exposed portion of the wiring substrate 30 before shielding) and the side surface of the substrate 2.
  • the connection member 31 may not be provided in the third modification of the fifth embodiment.
  • the shield layer 15 corresponds to the “heat transfer member” of the present invention and also corresponds to the “shield layer” of the present invention.
  • the heat generated by the first component 3 can be released from the shield layer 15 to the substrate 2, thereby further improving the heat dissipation effect.
  • first parts 3 and second parts 4 there may be a plurality of first parts 3 and second parts 4 respectively.
  • the part to be thermally insulated may not be connected to the heat transfer member.
  • the thermal conductivity of the heat transfer member varies depending on the location, for example, the thermal conductivity of the heat transfer member is lowered only on the component that is to be thermally insulated, and the component that is to be thermally insulated A heat transfer member may be connected.
  • the heat transfer member may be divided into a plurality of parts.
  • the heat transfer member when the heat transfer member is divided into two or more, for example, one is the first embodiment, and the other is the third embodiment. May be. Further, even if there is only one heat transfer member, for example, a configuration in which the portion of the first embodiment and the portion of the third embodiment are integrated, and a plurality of embodiments are combined and integrated in the conductive member. It is good also as the structure which carried out.
  • the wiring board 30 is mounted.
  • the thickness of the wiring board 30 is set so that the one main surface 30a of the wiring board 30 is substantially parallel to the one main surface 2a.
  • the thickness of the adhesive member 5 may be changed between the first region on the first part 3 and the second region on the second part 4.
  • the module 1d according to the fourth embodiment may have a configuration in which the heat transfer member according to the first embodiment is embedded in the heat conductive paste 41.
  • the module 1d in the fourth embodiment is provided with the shield layer 15 so as to cover the surface of the sealing resin layer 42, the upper surface 41a of the heat conductive paste 41, and the side surface of the substrate 2 as in the fifth embodiment. You may do it.
  • heat conductive paste 41 described in the fifth embodiment may be used as a heat transfer member for connecting the first component 3 and the second component 4 having the same height.
  • the upper surface 41a of the heat conductive paste 41 is covered using, for example, a transfer mold method, a compression mold method, a liquid resin method, a sheet resin method, or the like.
  • a sealing resin layer may be further formed.
  • the present invention can be applied to a module having a heat dissipation structure as well as a component that generates heat on a substrate.
  • Module 2 Substrate 2a One main surface 3 First part 4, 40 Second part 5 Adhesive member 6 Metal block 7, 20, 42 Sealing resin layer 15 Shield layer 30 Wiring board 31 Connecting member 41 Thermal conductive paste

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un module qui est capable d'obtenir une réduction de hauteur, tout en améliorant l'effet de dissipation de chaleur. Un module (1) selon la présente invention comporte : un substrat (2) ; un premier composant (3) qui produit de la chaleur, tout en étant monté sur une surface principale (2a) du substrat (2) ; un deuxième composant (4) qui est monté sur la surface principale (2a) du substrat (2), et dans lequel l'augmentation de température pendant le fonctionnement est inférieure à l'augmentation de température du premier composant (3) pendant le fonctionnement ; un bloc métallique (6) qui est relié à une surface opposée (3a) du premier composant (3), ladite surface opposée étant sur le côté opposé d'une surface de face qui fait face à la surface principale (2a), et à une surface opposée (4a) du deuxième composant (4), ladite surface opposée étant sur le côté opposé d'une surface de face qui fait face à la surface principale (2a) ; et une couche de résine de scellage (7) qui scelle la surface principale (2a), le premier composant (3), le deuxième composant (4) et le bloc métallique (6). La hauteur entre la surface principale (2a) et la surface la plus élevée (8a) du bloc métallique est inférieure à la hauteur entre la surface principale (2a) et la surface la plus élevée (7a) de la couche de résine d'étanchéité (7).
PCT/JP2018/008682 2017-03-10 2018-03-07 Module WO2018164160A1 (fr)

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JP2017046386 2017-03-10
JP2017-046386 2017-03-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11984380B2 (en) 2020-08-21 2024-05-14 Murata Manufacturing Co., Ltd. Semiconductor package, semiconductor device, semiconductor package-mounted apparatus, and semiconductor device-mounted apparatus
WO2024228336A1 (fr) * 2023-05-01 2024-11-07 株式会社村田製作所 Module haute fréquence

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244391A (ja) * 1999-12-21 2001-09-07 Toyota Central Res & Dev Lab Inc マルチチップモジュールの冷却構造
JP2001267473A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd 半導体装置およびその製造方法
JP2007311441A (ja) * 2006-05-17 2007-11-29 Hitachi Ltd パワー半導体モジュール
JP2014179611A (ja) * 2013-03-14 2014-09-25 General Electric Co <Ge> パワーオーバーレイ構造およびその製造方法
JP2016134591A (ja) * 2015-01-22 2016-07-25 株式会社デンソー 半導体装置の製造方法
WO2016117196A1 (fr) * 2015-01-21 2016-07-28 株式会社村田製作所 Module amplificateur de puissance

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244391A (ja) * 1999-12-21 2001-09-07 Toyota Central Res & Dev Lab Inc マルチチップモジュールの冷却構造
JP2001267473A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd 半導体装置およびその製造方法
JP2007311441A (ja) * 2006-05-17 2007-11-29 Hitachi Ltd パワー半導体モジュール
JP2014179611A (ja) * 2013-03-14 2014-09-25 General Electric Co <Ge> パワーオーバーレイ構造およびその製造方法
WO2016117196A1 (fr) * 2015-01-21 2016-07-28 株式会社村田製作所 Module amplificateur de puissance
JP2016134591A (ja) * 2015-01-22 2016-07-25 株式会社デンソー 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11984380B2 (en) 2020-08-21 2024-05-14 Murata Manufacturing Co., Ltd. Semiconductor package, semiconductor device, semiconductor package-mounted apparatus, and semiconductor device-mounted apparatus
WO2024228336A1 (fr) * 2023-05-01 2024-11-07 株式会社村田製作所 Module haute fréquence

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