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WO2018163721A1 - Carrier for double-sided polishing device - Google Patents

Carrier for double-sided polishing device Download PDF

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Publication number
WO2018163721A1
WO2018163721A1 PCT/JP2018/004856 JP2018004856W WO2018163721A1 WO 2018163721 A1 WO2018163721 A1 WO 2018163721A1 JP 2018004856 W JP2018004856 W JP 2018004856W WO 2018163721 A1 WO2018163721 A1 WO 2018163721A1
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WO
WIPO (PCT)
Prior art keywords
carrier
base material
holding hole
double
carrier base
Prior art date
Application number
PCT/JP2018/004856
Other languages
French (fr)
Japanese (ja)
Inventor
大地 北爪
佑宜 田中
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017156908A external-priority patent/JP6840639B2/en
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2018163721A1 publication Critical patent/WO2018163721A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/28Work carriers for double side lapping of plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a carrier for a double-side polishing apparatus used in a double-side polishing apparatus that performs double-side polishing of a wafer.
  • a carrier for a double-side polishing machine having the same number of holding holes as the number of wafers is installed on the surface plate.
  • the wafer is held by the holding holes of the carrier, the wafer is sandwiched from both surfaces by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
  • a carrier base material having a holding hole for holding a wafer is usually made of metal.
  • the carrier for a double-side polishing apparatus has a resin insert material on the inner periphery of the wafer holding hole in order to protect the outer peripheral portion of the wafer from the metal carrier base material.
  • This insert material is formed by fitting or injection molding. Since the insert material is in contact with the outer peripheral portion of the wafer, it is important in making the edge shape of the wafer.
  • the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material are fitted in a wedge shape and further bonded. It may be fixed with an agent (Patent Document 1).
  • the wedge shape of the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material periodically exists in large numbers, and distortion may occur during processing of the carrier. Further, when the insert material is fitted, there is a case where the fitting is partially tightened due to processing accuracy, and there is a problem that the stress is locally generated and the carrier hole holding hole periphery is distorted. Further, the distortion of the fitting portion around the holding hole of the carrier base material causes deterioration of the edge shape of the wafer, and also causes a deviation between the carrier base material and the insert material.
  • the polishing cloth is locally deformed, resulting in deterioration of wafer flatness.
  • the deviation between the carrier base material and the insert material can be corrected by polishing until the carrier base material and the insert material have the same height. It cannot be corrected until.
  • this distortion causes deterioration of the edge shape of the wafer.
  • the degree of deterioration of the edge shape changes depending on the magnitude of distortion, there is a problem in that the flatness varies among a set of five carriers.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a carrier for a double-side polishing apparatus in which distortion of a peripheral portion (fitting portion) of a holding hole of a carrier base material is reduced.
  • the present invention provides a carrier base material provided in a double-side polishing apparatus for polishing a wafer on both sides and having a holding hole for holding the wafer during polishing, and the holding hole.
  • a carrier for a double-side polishing apparatus which is disposed along an inner periphery and has an insert material formed with an inner periphery contacting the outer periphery of the wafer, wherein the carrier base material is along the inner periphery of the holding hole
  • the concave-convex portions are periodically formed, the distance between the centers of adjacent concave portions in the concave-convex portions is 10 mm or more and 60 mm or less, and the area of the convex portions in the concave-convex portions in the plane direction of the carrier base material Is larger than the area of the cutout portion of the recess, and the insert material is formed periodically with an uneven portion that can be engaged with the uneven portion formed on the inner periphery of the holding hole.
  • the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material are fitted with the concave and convex portions formed on the outer peripheral portion of the insert material.
  • a carrier for a double-side polishing apparatus is provided.
  • Such a carrier for a double-side polishing apparatus is a carrier for a double-side polishing apparatus in which the distortion of the peripheral part (fitting part) of the holding hole of the carrier base material is reduced.
  • the shape of the cutout portion of the recess formed in the inner periphery of the holding hole of the carrier base material may be any one of a triangle, a rectangle, a trapezoid, a wedge, a keyhole, a U-shape, and a circle. preferable.
  • the uneven portion formed in the inner periphery of the holding hole of the carrier base material has an area of the convex portion in the surface direction of the carrier base material that is four times or more than an area of the notch portion of the concave portion. Preferably there is.
  • the strength of the convex portion formed on the inner periphery of the carrier hole of the carrier base material further increases, so the peripheral part of the carrier base material holding hole (fitting part) This is preferable because it provides a carrier for a double-side polishing apparatus with reduced distortion.
  • the carrier for the double-side polishing apparatus of the present invention can increase the strength of the fitting portion formed on the inner periphery of the holding hole of the carrier base material, and can reduce distortion around the holding hole of the carrier base material. It becomes. Then, by performing double-side polishing of the wafer using such a carrier for a double-side polishing apparatus, it is possible to obtain a wafer with improved edge flatness and reduced flatness variation due to the distortion reducing effect around the holding hole. .
  • FIG. 6 In the measurement results of the strain amount around the holding hole (FIG. 6 (A)), ESFQRange relative value (FIG.
  • the present inventors have found that the interval between the concave portions in the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material (that is, the center of adjacent concave portions).
  • the distance between each other) is increased from 5 mm or more to less than 10 mm to 10 mm or more and 60 mm or less, and the carrier base material is found to be a carrier in which the distortion of the fitting portion with the insert material is reduced. Reached.
  • the present invention is arranged in a double-side polishing apparatus for double-side polishing a wafer, and is arranged along a carrier base material having a holding hole for holding the wafer during polishing and along the inner periphery of the holding hole.
  • a carrier for a double-side polishing apparatus having an insert material formed with an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material has a concavo-convex portion periodically along the inner periphery of the holding hole.
  • the distance between the centers of adjacent recesses in the concavo-convex portion is not less than 10 mm and not more than 60 mm, and the area of the ridge in the concavo-convex portion in the surface direction of the carrier base material is a notch portion of the recess.
  • the insert material is formed by periodically forming uneven portions that can be fitted to the uneven portions formed on the inner periphery of the holding hole on the outer periphery, A carrier for a double-side polishing apparatus, wherein the uneven portion formed on the inner periphery of the holding hole of the carrier base material is fitted with the uneven portion formed on the outer periphery of the insert material. I will provide a.
  • FIG. 1 shows an example of a carrier for a double-side polishing apparatus of the present invention.
  • the carrier 1 for a double-side polishing apparatus of the present invention is disposed in a double-side polishing apparatus for double-side polishing a wafer, and includes a carrier base material 3 having a holding hole 2 for holding the wafer during polishing,
  • the insert material 4 is disposed along the inner periphery of the holding hole 2 and has an inner peripheral portion formed in contact with the outer peripheral portion of the wafer.
  • the carrier base material 3 is one in which irregularities 5 are periodically and continuously formed along the inner periphery of the holding hole 2.
  • the distance d between the centers of adjacent concave portions 5a in the concave and convex portion 5 of the carrier base material 3 is 10 mm or more and 60 mm or less
  • the area of the convex portion 5b in the concave and convex portion 5 in the surface direction of the carrier base material 3 is It is characterized by being larger than the area of the cutout portion of the recess 5a.
  • the carrier base material 3 is fitted to the insert material 4.
  • the carrier 1 for a double-side polishing apparatus with reduced joint distortion is obtained.
  • the centers of adjacent concave portions 50 a in the concave and convex portions of the carrier base material 30 are arranged in order to securely fit the insert material 40 and the carrier base material 30.
  • the distance varies depending on the diameter of the wafer, many exist at relatively narrow intervals of 5 mm to less than 10 mm (about 9.6 mm when the diameter is 300 mm).
  • stress is partially concentrated at such a narrow interval, and as shown in FIG. 3, distortion occurs around the holding hole of the carrier base material 30.
  • the area of the convex part 5b in the concave and convex part 5 is larger than the area of the notch part of the concave part 5a, and adjacent concave parts in the concave and convex part 5 of the carrier base material 3
  • the number of the concavo-convex portions 5 can be reduced as compared with the conventional case, and the area of the convex portions 5b on the carrier base material side can be relatively increased.
  • the amount of distortion around the holding hole of the carrier base material 3 can be reduced by making the interval between the fitting portions wide.
  • insert material 4 may be detached from carrier base material 3 during wafer processing or the like, and therefore d is 60 mm or less in the present invention.
  • the distance d between the centers of adjacent recesses 5a in the concavo-convex part 5 of the carrier base material 3 is preferably 14 mm or more and 50 mm or less, more preferably 18 mm or more and 30 mm or less.
  • FIG. 4 (A) and FIG. 4 (B) show the results of analysis in the case where the shape of the notched portion of the concavo-convex part is trapezoidal and circular.
  • the distance d between the centers of adjacent concave portions in the concave and convex portions of the carrier base material is less than 10 mm.
  • the amount of distortion (deformation rate) is significantly larger than in the case of 10 mm or more.
  • the distortion decreases as the distance d between the centers of the adjacent recesses increases.
  • the shape of the cutout portion of the recess 5a formed in the inner periphery of the holding hole 2 of the carrier base material 3 is triangular, rectangular, trapezoidal, wedge-shaped, keyhole-shaped, U It is preferably either a letter shape or a circle. And in any of these shapes, as a result of simulation analysis, the same tendency as described above was found.
  • the area of the convex part 5b in the surface direction of the carrier base material 3 is 4 times or more of the area of the notch part of the recessed part 5a. It is preferable.
  • the strength of the convex portion 5b is further increased, so that the distortion of the peripheral portion (fitting portion) around the holding hole of the carrier base material 3 is further reduced.
  • the insert 4 has an uneven portion 6 composed of a recessed portion 6 a and a protruded portion 6 b that can be engaged with the uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3. It is formed periodically in the part.
  • a material of the insert material 4 for example, a hard resin can be used.
  • the carrier 1 for a double-side polishing apparatus of the present invention is fitted with an uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3 and an uneven portion 6 formed on the outer periphery of the insert material 4. It is a thing.
  • Such a carrier 1 for a double-side polishing apparatus has less distortion in the peripheral portion (fitting part) of the holding hole of the carrier base material 3, and the wafer 1 is double-sided using such a carrier 1 for double-side polishing apparatus.
  • polishing the edge flatness of the wafer to be processed can be improved and the flatness variation can be reduced due to the distortion reducing effect around the holding hole.
  • Example 1 As a carrier for a double-side polishing apparatus, the shape of the notched portion of the concave portion 5a of the concave and convex portion 5 formed on the inner periphery of the holding hole of the carrier base material 3 is trapezoidal, and the distance d between the centers of the adjacent concave portions 5a is 19.1 mm. In the surface direction, the carrier base material 3 in which the area of the convex part 5b in the concave-convex part 5 is larger than the area of the notch part of the concave part 5a and the insert material 4 are fitted, and double-side polishing as shown in FIG. An apparatus carrier 1 was manufactured. The d (19.1 mm) of Example 1 is about twice the d (9.6 mm) of Comparative Example 1.
  • Example 1 With respect to the carrier for the double-side polishing apparatus of Example 1 and Comparative Example 1 above, the distortion in the range shown in FIG. 5 (around the holding hole of the carrier base material) was confirmed with a three-dimensional measuring machine (manufactured by Tokyo Seimitsu). The measurement results are shown in FIG. The average value of the strain amount was 24.2 ⁇ m in Example 1 and 29.1 ⁇ m in Comparative Example 1. In Example 1, it was confirmed that the distortion around the holding hole was significantly reduced as compared with Comparative Example 1. These results almost coincided with the simulation results shown in FIG.
  • FIG. 6B shows the result of the ESFQRange relative value when Comparative Example 1 is used as a reference
  • FIG. 6C shows the result of the relative value of ESFQRmax.
  • Example 1 the range of ESFQR range was reduced compared to Comparative Example 1, and it was confirmed that the variation in edge flatness was reduced. At the same time, the value of ESFQRmax could be improved.
  • DSP processing was performed on a silicon wafer having a diameter of 300 mm. However, the insert material 40 was detached from the carrier and the DSP processing could not be performed.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a carrier for a double-sided polishing device, the carrier having: a carrier base material in which a holding hole for holding a wafer during polishing is formed; and an insert material disposed along the inner circumference of the holding hole. In the carrier base material, an uneven part is periodically formed along the inner circumference of the holding hole, the distance between the centers of recess portions adjacent to each other in the uneven part is 10 mm to 60 mm, and the area of a protruding portion of the uneven part is larger than the area of a notch portion of the recess part. In the insert material, an uneven part, which can be fitted with the uneven part formed on the inner circumference of the holding hole, is periodically formed on the outer circumference of the insert material, and the uneven part formed on the inner circumference of the holding hole of the carrier base material is fitted with the uneven part formed on the outer circumference of the insert material. Thus, the carrier for the double-sided polishing device, in which deformation of a peripheral portion (fitting portion) of the holding hole in the carrier base material is reduced, is provided.

Description

両面研磨装置用キャリアCarrier for double-side polishing machine
 本発明は、ウェーハを両面研磨する両面研磨装置で用いられる両面研磨装置用キャリアに関する。 The present invention relates to a carrier for a double-side polishing apparatus used in a double-side polishing apparatus that performs double-side polishing of a wafer.
 両面研磨装置は1バッチ当り例えば5枚程度のウェーハの両面を同時に研磨するため、ウェーハ枚数と同数の保持孔を有する両面研磨機用キャリアを定盤上に設置する。キャリアの保持孔によりウェーハが保持され、上下定盤に設けられた研磨布により両面からウェーハが挟み込まれ、研磨面に研磨剤を供給しながら研磨が行われる。 In the double-side polishing apparatus, for example, about 5 wafers per batch are polished at the same time, a carrier for a double-side polishing machine having the same number of holding holes as the number of wafers is installed on the surface plate. The wafer is held by the holding holes of the carrier, the wafer is sandwiched from both surfaces by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
 両面研磨装置用キャリアは、ウェーハを保持するための保持孔を有するキャリア母材が、通常は金属製である。両面研磨装置用キャリアは、ウェーハの外周部を金属製のキャリア母材から保護するために、ウェーハ保持孔内周に樹脂製のインサート材を有している。このインサート材は嵌め込みか射出成型により形成されている。インサート材はウェーハの外周部と接するため、ウェーハのエッジ形状を作り込む上で重要となる。 In a carrier for a double-side polishing apparatus, a carrier base material having a holding hole for holding a wafer is usually made of metal. The carrier for a double-side polishing apparatus has a resin insert material on the inner periphery of the wafer holding hole in order to protect the outer peripheral portion of the wafer from the metal carrier base material. This insert material is formed by fitting or injection molding. Since the insert material is in contact with the outer peripheral portion of the wafer, it is important in making the edge shape of the wafer.
 このインサート材の取り付けに際して、ウェーハ加工中や搬送時にインサート材が外れることを防止するために、インサート材の外周部とキャリア母材の保持孔の内周部を楔状にして嵌合し、さらに接着剤で固定することもある(特許文献1)。 When attaching this insert material, in order to prevent the insert material from detaching during wafer processing or conveyance, the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material are fitted in a wedge shape and further bonded. It may be fixed with an agent (Patent Document 1).
特開2000-24912号公報JP 2000-24912 A
 インサート材の外周部とキャリア母材の保持孔の内周部の楔形状は周期的に多数存在しており、キャリアの加工時に歪みが生じることがある。さらに、インサート材の嵌合時には、加工の精度により部分的に嵌め込みがきつくなることがあり、局所的に応力が生じてキャリア母材の保持孔周辺が歪む問題がある。また、このキャリア母材の保持孔周辺の嵌合部分の歪みは、ウェーハのエッジ形状の悪化を引き起こし、また、キャリア母材とインサート材にズレを生じさせる。 The wedge shape of the outer periphery of the insert material and the inner periphery of the holding hole of the carrier base material periodically exists in large numbers, and distortion may occur during processing of the carrier. Further, when the insert material is fitted, there is a case where the fitting is partially tightened due to processing accuracy, and there is a problem that the stress is locally generated and the carrier hole holding hole periphery is distorted. Further, the distortion of the fitting portion around the holding hole of the carrier base material causes deterioration of the edge shape of the wafer, and also causes a deviation between the carrier base material and the insert material.
 この状態でウェーハの加工を行うと研磨布が局所的に変形してしまい、ウェーハ平坦度の悪化を引き起こしてしまう。また、キャリア母材とインサート材のズレは研磨により、ある程度キャリア母材とインサート材とを同等な高さになるまで修正することができるが、キャリア母材の保持孔周辺の嵌合部分の歪みまでは修正することができない。結果、この歪みによってウェーハのエッジ形状の悪化が引き起こされる。また、歪みの大きさによりエッジ形状の悪化度合いが変化するため、5枚1セットのキャリア間でもフラットネスにバラツキが生じる問題がある。したがって、ウェーハのエッジ形状の悪化とキャリア間のフラットネスのバラツキを抑えるためにも、キャリア母材の保持孔周辺部分(嵌合部分)の歪みが少ない両面研磨装置用キャリアが求められている。 If the wafer is processed in this state, the polishing cloth is locally deformed, resulting in deterioration of wafer flatness. In addition, the deviation between the carrier base material and the insert material can be corrected by polishing until the carrier base material and the insert material have the same height. It cannot be corrected until. As a result, this distortion causes deterioration of the edge shape of the wafer. Further, since the degree of deterioration of the edge shape changes depending on the magnitude of distortion, there is a problem in that the flatness varies among a set of five carriers. Therefore, in order to suppress the deterioration of the edge shape of the wafer and the variation in flatness between the carriers, there is a need for a carrier for a double-side polishing apparatus in which the peripheral portion of the holding hole of the carrier base material (fitting portion) is less distorted.
 本発明は、上記問題点に鑑みてなされたものであって、キャリア母材の保持孔周辺部分(嵌合部分)の歪みが低減された両面研磨装置用キャリアを提供することを目的とする。 The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a carrier for a double-side polishing apparatus in which distortion of a peripheral portion (fitting portion) of a holding hole of a carrier base material is reduced.
 上記課題を解決するために、本発明は、ウェーハを両面研磨する両面研磨装置において配設され、研磨の際にウェーハを保持するための保持孔が形成されたキャリア母材と、前記保持孔の内周に沿って配置され、前記ウェーハの外周部と接する内周部が形成されたインサート材とを有する両面研磨装置用キャリアであって、前記キャリア母材は、前記保持孔の内周に沿って凹凸部が周期的に形成されたものであり、該凹凸部における隣接する凹部の中心同士の距離が10mm以上60mm以下であり、前記キャリア母材の面方向において前記凹凸部における凸部の面積が凹部の切り欠き部分の面積よりも大きいものであり、前記インサート材は、前記保持孔の内周に形成された前記凹凸部と嵌合可能である凹凸部が外周部に周期的に形成されたものであり、前記キャリア母材の前記保持孔の内周に形成された前記凹凸部と、前記インサート材の外周部に形成された前記凹凸部とが嵌合したものであることを特徴とする両面研磨装置用キャリアを提供する。 In order to solve the above problems, the present invention provides a carrier base material provided in a double-side polishing apparatus for polishing a wafer on both sides and having a holding hole for holding the wafer during polishing, and the holding hole. A carrier for a double-side polishing apparatus, which is disposed along an inner periphery and has an insert material formed with an inner periphery contacting the outer periphery of the wafer, wherein the carrier base material is along the inner periphery of the holding hole The concave-convex portions are periodically formed, the distance between the centers of adjacent concave portions in the concave-convex portions is 10 mm or more and 60 mm or less, and the area of the convex portions in the concave-convex portions in the plane direction of the carrier base material Is larger than the area of the cutout portion of the recess, and the insert material is formed periodically with an uneven portion that can be engaged with the uneven portion formed on the inner periphery of the holding hole. The concave and convex portions formed on the inner periphery of the holding hole of the carrier base material are fitted with the concave and convex portions formed on the outer peripheral portion of the insert material. Provided is a carrier for a double-side polishing apparatus.
 このような両面研磨装置用キャリアであれば、キャリア母材の保持孔周辺部分(嵌合部分)の歪みが低減された両面研磨装置用キャリアとなる。 Such a carrier for a double-side polishing apparatus is a carrier for a double-side polishing apparatus in which the distortion of the peripheral part (fitting part) of the holding hole of the carrier base material is reduced.
 またこの場合、前記キャリア母材の前記保持孔の内周に形成された前記凹部の切り欠き部分の形状が三角形、長方形、台形、楔形、鍵穴形、U字形、円形のいずれかであることが好ましい。 In this case, the shape of the cutout portion of the recess formed in the inner periphery of the holding hole of the carrier base material may be any one of a triangle, a rectangle, a trapezoid, a wedge, a keyhole, a U-shape, and a circle. preferable.
 本発明の両面研磨装置用キャリアにおけるキャリア母材の保持孔の内周に形成された凹部の切り欠き部分の形状としては、上記形状が挙げられる。 As the shape of the cutout portion of the recess formed in the inner periphery of the holding hole of the carrier base material in the carrier for a double-side polishing apparatus of the present invention, the above shape can be mentioned.
 またこの場合、前記キャリア母材の前記保持孔の内周に形成された凹凸部は、前記キャリア母材の面方向における前記凸部の面積が前記凹部の切り欠き部分の面積の四倍以上であることが好ましい。 In this case, the uneven portion formed in the inner periphery of the holding hole of the carrier base material has an area of the convex portion in the surface direction of the carrier base material that is four times or more than an area of the notch portion of the concave portion. Preferably there is.
 このような両面研磨装置用キャリアであれば、キャリア母材の保持孔内周に形成されている凸部の強度が更に上がるため、より一層、キャリア母材の保持孔周辺部分(嵌合部分)の歪みが低減された両面研磨装置用キャリアとなるために好ましい。 With such a carrier for a double-side polishing apparatus, the strength of the convex portion formed on the inner periphery of the carrier hole of the carrier base material further increases, so the peripheral part of the carrier base material holding hole (fitting part) This is preferable because it provides a carrier for a double-side polishing apparatus with reduced distortion.
 本発明の両面研磨装置用キャリアであれば、キャリア母材の保持孔内周に形成された嵌合部分の強度を増すことができ、キャリア母材の保持孔周辺の歪みを少なくすることが可能となる。そして、このような両面研磨装置用キャリアを用いてウェーハを両面研磨すれば、保持孔周辺の歪み低減効果により、エッジフラットネスが向上した、フラットネスのバラツキが低減されたウェーハを得ることができる。 The carrier for the double-side polishing apparatus of the present invention can increase the strength of the fitting portion formed on the inner periphery of the holding hole of the carrier base material, and can reduce distortion around the holding hole of the carrier base material. It becomes. Then, by performing double-side polishing of the wafer using such a carrier for a double-side polishing apparatus, it is possible to obtain a wafer with improved edge flatness and reduced flatness variation due to the distortion reducing effect around the holding hole. .
本発明の両面研磨装置用キャリアの一例を示す概略図である。It is the schematic which shows an example of the carrier for double-side polish apparatuses of this invention. 従来の両面研磨装置用キャリアの一例を示す概略図である。It is the schematic which shows an example of the carrier for the conventional double-side polish apparatus. 従来の両面研磨装置用キャリアにおいて発生していた歪みを説明する説明図である。It is explanatory drawing explaining the distortion which generate | occur | produced in the carrier for the conventional double-side polish apparatus. キャリア母材の保持孔周辺の変形率と、キャリア母材の凹凸部における隣接する凹部の中心同士の距離dとの関係を示すグラフである。It is a graph which shows the relationship between the deformation rate around the holding hole of a carrier base material, and the distance d of the center of the adjacent recessed part in the uneven | corrugated | grooved part of a carrier base material. 実施例1及び比較例1で歪みを測定した部分を説明する説明図である。It is explanatory drawing explaining the part which measured distortion in Example 1 and Comparative Example 1. FIG. 実施例1及び比較例1で測定した保持孔周辺の歪み量(図6(A))、ESFQRrange相対値(図6(B))、ESFQRmaxの相対値(図6(C))の測定結果である。In the measurement results of the strain amount around the holding hole (FIG. 6 (A)), ESFQRange relative value (FIG. 6 (B)), and ESFQRmax relative value (FIG. 6 (C)) measured in Example 1 and Comparative Example 1. is there. 比較例2~4における、キャリア母材の保持孔周辺の歪みと、フラットネス(nm)との関係を示すグラフである。6 is a graph showing the relationship between the strain around the holding hole of the carrier base material and the flatness (nm) in Comparative Examples 2 to 4.
 上述したように、従来、キャリア母材の保持孔周辺部分(嵌合部分)の歪みが少ない両面研磨装置用キャリアが求められていた。 As described above, conventionally, there has been a demand for a carrier for a double-side polishing apparatus with less distortion in the peripheral portion (fitting portion) of the holding hole of the carrier base material.
 そして、本発明者らは上記の課題を解決するために鋭意検討を重ねた結果、キャリア母材の保持孔の内周に形成されている凹凸部における凹部の間隔(即ち、隣接する凹部の中心同士の距離)を、従来の5mm以上10mm未満から、10mm以上60mm以下に広げることで、キャリア母材の、インサート材との嵌合部分の歪みが低減されたキャリアとなることを見出し、本発明に到達した。 As a result of intensive investigations to solve the above-mentioned problems, the present inventors have found that the interval between the concave portions in the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material (that is, the center of adjacent concave portions). The distance between each other) is increased from 5 mm or more to less than 10 mm to 10 mm or more and 60 mm or less, and the carrier base material is found to be a carrier in which the distortion of the fitting portion with the insert material is reduced. Reached.
 即ち、本発明は、ウェーハを両面研磨する両面研磨装置において配設され、研磨の際にウェーハを保持するための保持孔が形成されたキャリア母材と、前記保持孔の内周に沿って配置され、前記ウェーハの外周部と接する内周部が形成されたインサート材とを有する両面研磨装置用キャリアであって、前記キャリア母材は、前記保持孔の内周に沿って凹凸部が周期的に形成されたものであり、該凹凸部における隣接する凹部の中心同士の距離が10mm以上60mm以下であり、前記キャリア母材の面方向において前記凹凸部における凸部の面積が凹部の切り欠き部分の面積よりも大きいものであり、前記インサート材は、前記保持孔の内周に形成された前記凹凸部と嵌合可能である凹凸部が外周部に周期的に形成されたものであり、前記キャリア母材の前記保持孔の内周に形成された前記凹凸部と、前記インサート材の外周部に形成された前記凹凸部とが嵌合したものであることを特徴とする両面研磨装置用キャリアを提供する。 That is, the present invention is arranged in a double-side polishing apparatus for double-side polishing a wafer, and is arranged along a carrier base material having a holding hole for holding the wafer during polishing and along the inner periphery of the holding hole. And a carrier for a double-side polishing apparatus having an insert material formed with an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material has a concavo-convex portion periodically along the inner periphery of the holding hole. The distance between the centers of adjacent recesses in the concavo-convex portion is not less than 10 mm and not more than 60 mm, and the area of the ridge in the concavo-convex portion in the surface direction of the carrier base material is a notch portion of the recess. The insert material is formed by periodically forming uneven portions that can be fitted to the uneven portions formed on the inner periphery of the holding hole on the outer periphery, A carrier for a double-side polishing apparatus, wherein the uneven portion formed on the inner periphery of the holding hole of the carrier base material is fitted with the uneven portion formed on the outer periphery of the insert material. I will provide a.
 以下、本発明の両面研磨装置用キャリアについて詳細に説明する。 Hereinafter, the carrier for a double-side polishing apparatus of the present invention will be described in detail.
 図1に、本発明の両面研磨装置用キャリアの一例を示す。本発明の両面研磨装置用キャリア1は、ウェーハを両面研磨する両面研磨装置において配設されるものであり、研磨の際にウェーハを保持するための保持孔2が形成されたキャリア母材3と、前記保持孔2の内周に沿って配置され、ウェーハの外周部と接する内周部が形成されたインサート材4とを有する。 FIG. 1 shows an example of a carrier for a double-side polishing apparatus of the present invention. The carrier 1 for a double-side polishing apparatus of the present invention is disposed in a double-side polishing apparatus for double-side polishing a wafer, and includes a carrier base material 3 having a holding hole 2 for holding the wafer during polishing, The insert material 4 is disposed along the inner periphery of the holding hole 2 and has an inner peripheral portion formed in contact with the outer peripheral portion of the wafer.
 キャリア母材3は、保持孔2の内周に沿って凹凸部5が周期的に連続的に形成されたものである。本発明は、このキャリア母材3の凹凸部5における隣接する凹部5aの中心同士の距離dが10mm以上60mm以下であり、キャリア母材3の面方向において凹凸部5における凸部5bの面積が凹部5aの切り欠き部分の面積よりも大きいものであることを特徴とする。 The carrier base material 3 is one in which irregularities 5 are periodically and continuously formed along the inner periphery of the holding hole 2. In the present invention, the distance d between the centers of adjacent concave portions 5a in the concave and convex portion 5 of the carrier base material 3 is 10 mm or more and 60 mm or less, and the area of the convex portion 5b in the concave and convex portion 5 in the surface direction of the carrier base material 3 is It is characterized by being larger than the area of the cutout portion of the recess 5a.
 このように、キャリア母材3の凹凸部5における隣接する凹部5aの中心同士の距離dを10mm以上60mm以下として従来の距離よりも広げることで、キャリア母材3の、インサート材4との嵌合部分の歪みを低減した両面研磨装置用キャリア1となる。 Thus, by fitting the distance d between the centers of the adjacent recesses 5a in the concavo-convex part 5 of the carrier base material 3 to 10 mm or more and 60 mm or less, which is wider than the conventional distance, the carrier base material 3 is fitted to the insert material 4. Thus, the carrier 1 for a double-side polishing apparatus with reduced joint distortion is obtained.
 図2に示すように、従来の両面研磨装置用キャリア10は、インサート材40とキャリア母材30とを確実に嵌合させるために、キャリア母材30の凹凸部における隣接する凹部50aの中心同士の距離は、ウェーハ径によって異なるものの、5mm~10mm未満(直径300mmで約9.6mm)と比較的狭い間隔で多数存在していた。しかし、このような狭い間隔では部分的に応力が集中してしまい、図3に示すように、キャリア母材30の保持孔周辺に歪みが生じてしまう。 As shown in FIG. 2, in the conventional carrier 10 for a double-side polishing apparatus, the centers of adjacent concave portions 50 a in the concave and convex portions of the carrier base material 30 are arranged in order to securely fit the insert material 40 and the carrier base material 30. Although the distance varies depending on the diameter of the wafer, many exist at relatively narrow intervals of 5 mm to less than 10 mm (about 9.6 mm when the diameter is 300 mm). However, stress is partially concentrated at such a narrow interval, and as shown in FIG. 3, distortion occurs around the holding hole of the carrier base material 30.
 本発明では、キャリア母材3の面方向において凹凸部5における凸部5bの面積が凹部5aの切り欠き部分の面積よりも大きいもので、かつ、キャリア母材3の凹凸部5における隣接する凹部5aの中心同士の距離dを10mm以上と広げることで、従来よりも凹凸部5の数を少なくして、キャリア母材側の凸部5bの面積を相対的に大きくできる。このように、嵌合部分の間隔が広いものとすることで、キャリア母材3の保持孔周辺の歪み量を低減することができる。また、dが60mmを超えると、ウェーハ加工中等にインサート材4がキャリア母材3から外れる恐れがあるため、本発明においてdは60mm以下である。また、キャリア母材3の凹凸部5における隣接する凹部5aの中心同士の距離dは、好ましくは14mm以上50mm以下、より好ましくは18mm以上30mm以下である。 In the present invention, in the surface direction of the carrier base material 3, the area of the convex part 5b in the concave and convex part 5 is larger than the area of the notch part of the concave part 5a, and adjacent concave parts in the concave and convex part 5 of the carrier base material 3 By widening the distance d between the centers of 5a to 10 mm or more, the number of the concavo-convex portions 5 can be reduced as compared with the conventional case, and the area of the convex portions 5b on the carrier base material side can be relatively increased. Thus, the amount of distortion around the holding hole of the carrier base material 3 can be reduced by making the interval between the fitting portions wide. Further, if d exceeds 60 mm, insert material 4 may be detached from carrier base material 3 during wafer processing or the like, and therefore d is 60 mm or less in the present invention. Further, the distance d between the centers of adjacent recesses 5a in the concavo-convex part 5 of the carrier base material 3 is preferably 14 mm or more and 50 mm or less, more preferably 18 mm or more and 30 mm or less.
 ここで、キャリア母材の保持孔内周に形成された凹凸部における隣接する凹部の中心同士の距離dの大きさと、キャリア母材の保持孔周辺部分(嵌合部分)の歪みの関係について、以下に示す。 Here, regarding the relationship between the size of the distance d between the centers of adjacent concave portions in the concave and convex portions formed on the inner periphery of the holding hole of the carrier base material and the distortion of the peripheral portion of the holding hole (fitting portion) of the carrier base material, It is shown below.
 直径300mmのシリコンウェーハを両面研磨するための、両面研磨装置用キャリアのキャリア母材の保持孔周辺の嵌合部分について、従来の隣接する凹部の中心同士の距離d(9.6mm)の時のキャリア母材の歪み量を基準として、距離dを10倍(95.5mm)まで広げた時の、キャリア母材の歪み量をシミュレーション解析(ANSYS mechanical)により数値化した。 About the fitting part around the holding hole of the carrier base material of the carrier for a double-side polishing apparatus for double-side polishing a silicon wafer having a diameter of 300 mm, when the distance d (9.6 mm) between the centers of the conventional adjacent recesses is Based on the amount of distortion of the carrier base material, the amount of distortion of the carrier base material when the distance d was increased to 10 times (95.5 mm) was quantified by simulation analysis (ANSY mechanical).
 凹凸部の切り欠き部分の形状が台形の場合と円形の場合でそれぞれ解析した結果を図4(A)、図4(B)に示す。結果、台形の場合(図4(A))、及び円形の場合(図4(B))のいずれの場合も、キャリア母材の凹凸部における隣接する凹部の中心同士の距離dが10mm未満の場合、10mm以上の場合と比較して歪み量(変形率)が大幅に大きくなっている。一方、隣接する凹部の中心同士の距離dが10mm以上であれば、隣接する凹部の中心同士の距離dが大きい程歪みが低減した。歪みの低減は、間隔が大きくなるに伴い飽和していき、切り欠き部分の形状が台形の場合は4倍の距離(d=38.2mm)以上で一定となっている。 FIG. 4 (A) and FIG. 4 (B) show the results of analysis in the case where the shape of the notched portion of the concavo-convex part is trapezoidal and circular. As a result, in both cases of the trapezoid (FIG. 4A) and the circle (FIG. 4B), the distance d between the centers of adjacent concave portions in the concave and convex portions of the carrier base material is less than 10 mm. In this case, the amount of distortion (deformation rate) is significantly larger than in the case of 10 mm or more. On the other hand, when the distance d between the centers of the adjacent recesses is 10 mm or more, the distortion decreases as the distance d between the centers of the adjacent recesses increases. The reduction in distortion is saturated as the interval increases, and is constant at a distance of 4 times (d = 38.2 mm) or more when the shape of the notch is trapezoidal.
 凹部の切り欠き部分の形状が台形の場合、従来の隣接する凹部の中心同士の距離(d=9.6mm)の変形率を基準とした時に、4倍の距離(d=38.2mm)のときの歪み量は11%低減している。凹部の切り欠き部分が円形形状の場合も同様に4倍の距離以上で一定となり、従来間隔の変形率を基準としたときの歪み量は6.5%低減している。 When the shape of the cutout portion of the recess is trapezoidal, when the deformation rate of the distance between the centers of adjacent recesses (d = 9.6 mm) is used as a reference, the distance is four times (d = 38.2 mm). The amount of distortion is reduced by 11%. Similarly, when the cutout portion of the concave portion is circular, it is constant at a distance of four times or more, and the distortion amount is reduced by 6.5% based on the deformation rate of the conventional interval.
 また、本発明の両面研磨装置用キャリア1においては、キャリア母材3の保持孔2の内周に形成された凹部5aの切り欠き部分の形状が三角形、長方形、台形、楔形、鍵穴形、U字形、円形のいずれかであることが好ましい。そして、これらのいずれの形状においても、シミュレーション解析の結果、上記と同様の傾向が見出された。 Further, in the carrier 1 for a double-side polishing apparatus of the present invention, the shape of the cutout portion of the recess 5a formed in the inner periphery of the holding hole 2 of the carrier base material 3 is triangular, rectangular, trapezoidal, wedge-shaped, keyhole-shaped, U It is preferably either a letter shape or a circle. And in any of these shapes, as a result of simulation analysis, the same tendency as described above was found.
 また、キャリア母材3の保持孔2の内周に形成された凹凸部5は、キャリア母材3の面方向における凸部5bの面積が凹部5aの切り欠き部分の面積の四倍以上であることが好ましい。このような両面研磨装置用キャリア1であれば、凸部5bの強度が更に上がるため、より一層、キャリア母材3の保持孔周辺部分(嵌合部分)の歪みが低減されたものとなる。 Moreover, as for the uneven | corrugated | grooved part 5 formed in the inner periphery of the holding hole 2 of the carrier base material 3, the area of the convex part 5b in the surface direction of the carrier base material 3 is 4 times or more of the area of the notch part of the recessed part 5a. It is preferable. With such a carrier 1 for a double-side polishing apparatus, the strength of the convex portion 5b is further increased, so that the distortion of the peripheral portion (fitting portion) around the holding hole of the carrier base material 3 is further reduced.
 図1に示すように、インサート材4は、キャリア母材3の保持孔2の内周に形成された凹凸部5と嵌合可能である凹部6aと凸部6bとからなる凹凸部6が外周部に周期的に形成されたものである。インサート材4の材質としては、例えば硬質樹脂とすることができる。 As shown in FIG. 1, the insert 4 has an uneven portion 6 composed of a recessed portion 6 a and a protruded portion 6 b that can be engaged with the uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3. It is formed periodically in the part. As a material of the insert material 4, for example, a hard resin can be used.
 本発明の両面研磨装置用キャリア1は、このようなキャリア母材3の保持孔2の内周に形成された凹凸部5と、インサート材4の外周部に形成された凹凸部6が嵌合したものである。 The carrier 1 for a double-side polishing apparatus of the present invention is fitted with an uneven portion 5 formed on the inner periphery of the holding hole 2 of the carrier base material 3 and an uneven portion 6 formed on the outer periphery of the insert material 4. It is a thing.
 このような本発明の両面研磨装置用キャリア1は、キャリア母材3の保持孔周辺部分(嵌合部分)の歪みが少ないものとなり、このような両面研磨装置用キャリア1を用いてウェーハを両面研磨すれば、保持孔周辺の歪み低減効果により、加工されるウェーハのエッジフラットネスが向上した、フラットネスのバラツキが低減されたものを得ることができる。 Such a carrier 1 for a double-side polishing apparatus according to the present invention has less distortion in the peripheral portion (fitting part) of the holding hole of the carrier base material 3, and the wafer 1 is double-sided using such a carrier 1 for double-side polishing apparatus. By polishing, the edge flatness of the wafer to be processed can be improved and the flatness variation can be reduced due to the distortion reducing effect around the holding hole.
 以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらの実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to these examples.
(比較例1)
 両面研磨装置用キャリアとして、キャリア母材30の保持孔内周に形成された凹凸部の凹部50aの切り欠き部分の形状が台形で、隣接する凹部50aの中心同士の距離dが9.6mmのキャリア母材30と、インサート材40とを嵌合させ、図2に示すような両面研磨装置用キャリア10を製造した。
(Comparative Example 1)
As a carrier for a double-side polishing apparatus, the shape of the notched portion of the concave portion 50a of the concave and convex portion formed on the inner periphery of the holding hole of the carrier base material 30 is trapezoidal, and the distance d between the centers of the adjacent concave portions 50a is 9.6 mm. The carrier base material 30 and the insert material 40 were fitted to each other to manufacture a carrier 10 for a double-side polishing apparatus as shown in FIG.
(実施例1)
 両面研磨装置用キャリアとして、キャリア母材3の保持孔内周に形成された凹凸部5の凹部5aの切り欠き部分の形状が台形で、隣接する凹部5aの中心同士の距離dが19.1mmであり、面方向において凹凸部5における凸部5bの面積が凹部5aの切り欠き部分の面積よりも大きいキャリア母材3と、インサート材4とを嵌合させ、図1に示すような両面研磨装置用キャリア1を製造した。実施例1のd(19.1mm)は、比較例1のd(9.6mm)の約2倍である。
Example 1
As a carrier for a double-side polishing apparatus, the shape of the notched portion of the concave portion 5a of the concave and convex portion 5 formed on the inner periphery of the holding hole of the carrier base material 3 is trapezoidal, and the distance d between the centers of the adjacent concave portions 5a is 19.1 mm. In the surface direction, the carrier base material 3 in which the area of the convex part 5b in the concave-convex part 5 is larger than the area of the notch part of the concave part 5a and the insert material 4 are fitted, and double-side polishing as shown in FIG. An apparatus carrier 1 was manufactured. The d (19.1 mm) of Example 1 is about twice the d (9.6 mm) of Comparative Example 1.
 上記実施例1及び比較例1の両面研磨装置用キャリアについて、図5に示す範囲(キャリア母材の保持孔周辺)の歪みを3次元測定機(東京精密製)により確認した。測定結果を図6(A)に示す。歪み量の平均値が実施例1では24.2μm、比較例1では29.1μmであった。実施例1では比較例1よりも保持孔周辺の歪みが大幅に低減していることが確認された。尚、これらの結果は、図4(A)で示したシミュレーション結果にほぼ一致していた。 With respect to the carrier for the double-side polishing apparatus of Example 1 and Comparative Example 1 above, the distortion in the range shown in FIG. 5 (around the holding hole of the carrier base material) was confirmed with a three-dimensional measuring machine (manufactured by Tokyo Seimitsu). The measurement results are shown in FIG. The average value of the strain amount was 24.2 μm in Example 1 and 29.1 μm in Comparative Example 1. In Example 1, it was confirmed that the distortion around the holding hole was significantly reduced as compared with Comparative Example 1. These results almost coincided with the simulation results shown in FIG.
 さらに、これらのキャリアを用いて、直径300mmのシリコンウェーハに対してDSP(Double Side Polishing)加工を行い、フラットネス測定を行った(LSW-3000,コベルコ)。比較例1を基準とした場合のESFQRrange相対値の結果を図6(B)、及びESFQRmaxの相対値の結果を図6(C)に示す。実施例1では、比較例1に比べESFQRのrange幅が縮小しており、エッジフラットネスのバラツキが低減していることが確認された。また、同時にESFQRmaxの値も改善させることができた。 Furthermore, using these carriers, DSP (Double Side Polishing) processing was performed on a silicon wafer having a diameter of 300 mm, and flatness measurement was performed (LSW-3000, Kobelco). FIG. 6B shows the result of the ESFQRange relative value when Comparative Example 1 is used as a reference, and FIG. 6C shows the result of the relative value of ESFQRmax. In Example 1, the range of ESFQR range was reduced compared to Comparative Example 1, and it was confirmed that the variation in edge flatness was reduced. At the same time, the value of ESFQRmax could be improved.
(比較例2~4)
 比較例1の両面研磨装置用キャリアを基準としたときの、キャリア母材の保持孔周辺の歪み量が異なる両面研磨装置用キャリア(比較例2~4)の保持孔周辺の歪み量(倍率)及びフラットネスの悪化量(nm)との関係を表1及び図7に示す。結果、歪み量が少ない程、フラットネスが良好であることが確認された。
(Comparative Examples 2 to 4)
The amount of distortion (magnification) around the holding hole of the carrier for the double-side polishing apparatus (Comparative Examples 2 to 4) having a different amount of distortion around the holding hole of the carrier base material when the carrier for the double-side polishing apparatus of Comparative Example 1 is used as a reference Table 1 and FIG. 7 show the relationship with the flatness deterioration amount (nm). As a result, it was confirmed that the smaller the amount of distortion, the better the flatness.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
(比較例5)
 比較例1と同様にして、両面研磨装置用キャリアとして、キャリア母材30の保持孔内周に形成された凹凸部の凹部50aの切り欠き部分の形状が台形で、隣接する凹部50aの中心同士の距離dが62mmのキャリア母材30と、インサート材40とを嵌合させ、図2に示すような両面研磨装置用キャリア10を製造した。
(Comparative Example 5)
In the same manner as in Comparative Example 1, as a carrier for a double-side polishing apparatus, the shape of the notched portion of the concave portion 50a of the concave and convex portion formed on the inner periphery of the holding hole of the carrier base material 30 is trapezoidal, and the centers of the adjacent concave portions 50a are The carrier base material 30 having a distance d of 62 mm and the insert material 40 were fitted together to manufacture a carrier 10 for a double-side polishing apparatus as shown in FIG.
 製造したキャリアを用いて、直径300mmのシリコンウェーハに対してDSP加工を行ったが、途中、インサート材40がキャリアから外れてしまい、DSP加工を行うことができなかった。 Using the manufactured carrier, DSP processing was performed on a silicon wafer having a diameter of 300 mm. However, the insert material 40 was detached from the carrier and the DSP processing could not be performed.
 以上により、キャリア母材の保持孔内周に形成された隣接する凹部の中心同士の距離dが10mm未満であると、保持孔周辺の歪み量が大幅に大きくなり(比較例1)、dが60mmを超えると、ウェーハ加工中にインサート材が外れてしまった(比較例5)。一方で、dを10mm以上60mm以下としたキャリアは、母材の保持孔周辺部分(嵌合部分)の歪みが少ないものとなった(実施例1)。また、dが60mmのものでは、ウェーハのDSP加工を行っても、インサート材が外れることはなかった。 As described above, when the distance d between the centers of adjacent recesses formed on the inner periphery of the holding hole of the carrier base material is less than 10 mm, the amount of distortion around the holding hole is significantly increased (Comparative Example 1). When it exceeded 60 mm, the insert material was detached during wafer processing (Comparative Example 5). On the other hand, the carrier in which d is 10 mm or more and 60 mm or less has little distortion in the peripheral portion (fitting portion) of the holding hole of the base material (Example 1). Further, when the d was 60 mm, the insert material did not come off even when the wafer was subjected to DSP processing.
 なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
 
The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

Claims (3)

  1.  ウェーハを両面研磨する両面研磨装置において配設され、研磨の際にウェーハを保持するための保持孔が形成されたキャリア母材と、前記保持孔の内周に沿って配置され、前記ウェーハの外周部と接する内周部が形成されたインサート材とを有する両面研磨装置用キャリアであって、
     前記キャリア母材は、前記保持孔の内周に沿って凹凸部が周期的に形成されたものであり、該凹凸部における隣接する凹部の中心同士の距離が10mm以上60mm以下であり、前記キャリア母材の面方向において前記凹凸部における凸部の面積が凹部の切り欠き部分の面積よりも大きいものであり、
     前記インサート材は、前記保持孔の内周に形成された前記凹凸部と嵌合可能である凹凸部が外周部に周期的に形成されたものであり、
     前記キャリア母材の前記保持孔の内周に形成された前記凹凸部と、前記インサート材の外周部に形成された前記凹凸部とが嵌合したものであることを特徴とする両面研磨装置用キャリア。
    A carrier base material provided in a double-side polishing apparatus for polishing a wafer on both sides and having a holding hole for holding the wafer during polishing, and arranged along the inner periphery of the holding hole, the outer periphery of the wafer A carrier for a double-side polishing apparatus having an insert material formed with an inner peripheral part in contact with the part,
    The carrier base material has irregularities formed periodically along the inner periphery of the holding hole, and the distance between the centers of adjacent depressions in the irregularities is 10 mm or more and 60 mm or less, and the carrier In the surface direction of the base material, the area of the convex part in the uneven part is larger than the area of the notch part of the concave part,
    The insert material is one in which an uneven portion that can be fitted to the uneven portion formed on the inner periphery of the holding hole is periodically formed on the outer peripheral portion,
    For the double-side polishing apparatus, wherein the uneven portion formed on the inner periphery of the holding hole of the carrier base material is fitted with the uneven portion formed on the outer peripheral portion of the insert material. Career.
  2.  前記キャリア母材の前記保持孔の内周に形成された前記凹部の切り欠き部分の形状が三角形、長方形、台形、楔形、鍵穴形、U字形、円形のいずれかであることを特徴とする請求項1に記載の両面研磨装置用キャリア。 The shape of the cutout portion of the recess formed in the inner periphery of the holding hole of the carrier base material is any one of a triangle, a rectangle, a trapezoid, a wedge, a keyhole, a U-shape, and a circle. Item 2. The carrier for a double-side polishing apparatus according to Item 1.
  3.  前記キャリア母材の前記保持孔の内周に形成された凹凸部は、前記キャリア母材の面方向における前記凸部の面積が前記凹部の切り欠き部分の面積の四倍以上であることを特徴とする請求項1又は請求項2に記載の両面研磨装置用キャリア。
     
    In the uneven portion formed on the inner periphery of the holding hole of the carrier base material, the area of the convex portion in the surface direction of the carrier base material is at least four times the area of the notch portion of the concave portion. The carrier for a double-side polishing apparatus according to claim 1 or 2.
PCT/JP2018/004856 2017-03-06 2018-02-13 Carrier for double-sided polishing device WO2018163721A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10329013A (en) * 1997-05-30 1998-12-15 Shin Etsu Handotai Co Ltd Carrier for double polishing and double lapping
JP2002018708A (en) * 2000-07-10 2002-01-22 Sumitomo Bakelite Co Ltd Polished object holding material and its manufacturing method
JP2004122346A (en) * 2002-10-07 2004-04-22 Daiden Co Ltd Carrier plate for polishing
JP2009012086A (en) * 2007-07-02 2009-01-22 Speedfam Co Ltd Workpiece carrier
JP2010280026A (en) * 2009-06-03 2010-12-16 Fujikoshi Mach Corp Double-side polishing apparatus and double-side polishing method
JP2011067918A (en) * 2009-09-28 2011-04-07 Shirasaki Seisakusho:Kk Holder for brittle thin plate-polishing device, and method of manufacturing the same
JP2013502719A (en) * 2009-08-21 2013-01-24 エルジー シルトロン インコーポレーテッド Double-side polishing apparatus and carrier therefor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10329013A (en) * 1997-05-30 1998-12-15 Shin Etsu Handotai Co Ltd Carrier for double polishing and double lapping
JP2002018708A (en) * 2000-07-10 2002-01-22 Sumitomo Bakelite Co Ltd Polished object holding material and its manufacturing method
JP2004122346A (en) * 2002-10-07 2004-04-22 Daiden Co Ltd Carrier plate for polishing
JP2009012086A (en) * 2007-07-02 2009-01-22 Speedfam Co Ltd Workpiece carrier
JP2010280026A (en) * 2009-06-03 2010-12-16 Fujikoshi Mach Corp Double-side polishing apparatus and double-side polishing method
JP2013502719A (en) * 2009-08-21 2013-01-24 エルジー シルトロン インコーポレーテッド Double-side polishing apparatus and carrier therefor
JP2011067918A (en) * 2009-09-28 2011-04-07 Shirasaki Seisakusho:Kk Holder for brittle thin plate-polishing device, and method of manufacturing the same

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