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WO2018162321A1 - Élément de coupe pour outil d'usinage par enlèvement et procédé de fabrication d'un tel élément de coupe - Google Patents

Élément de coupe pour outil d'usinage par enlèvement et procédé de fabrication d'un tel élément de coupe Download PDF

Info

Publication number
WO2018162321A1
WO2018162321A1 PCT/EP2018/055057 EP2018055057W WO2018162321A1 WO 2018162321 A1 WO2018162321 A1 WO 2018162321A1 EP 2018055057 W EP2018055057 W EP 2018055057W WO 2018162321 A1 WO2018162321 A1 WO 2018162321A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
layer
base body
cutting element
cobalt
Prior art date
Application number
PCT/EP2018/055057
Other languages
German (de)
English (en)
Inventor
Peter Kopton
Original Assignee
Audi Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Audi Ag filed Critical Audi Ag
Publication of WO2018162321A1 publication Critical patent/WO2018162321A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/241—Chemical after-treatment on the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/241—Chemical after-treatment on the surface
    • B22F2003/242—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/241—Chemical after-treatment on the surface
    • B22F2003/244—Leaching

Definitions

  • the invention relates to a cutting element for a chip processing tool according to the preamble of claim 1 and to a method for producing such a cutting element according to claim 6.
  • Cutting elements are used in the milling of non-ferrous
  • Such PCD cutting elements have a sintered base body, in which a synthetically produced, extremely hard mass of diamond particles with random orientation in a metal matrix (hereinafter also called metallic binder) is embedded.
  • a metallic binder cobalt or a cobalt alloy is exemplified.
  • the grain size of the embedded in the metal matrix diamond grains can be exemplified in the ⁇ - range, approximately between 2 ⁇ to 100 ⁇ , lie.
  • a metal-graphite mixture is subjected to a very high process pressure as well as a high process temperature, forming a porous diamond network in which the diamond grains are relative to their grain size
  • Binder matrix gives the cutting element the required toughness.
  • the service life of a PCD cutting element depends on the material strength of the workpieces to be machined. With high material strength, the service life is correspondingly greatly reduced. From DE 10 2014 210 371 A1 discloses a cutting tool is known, the substrate surface not of PCD diamonds, but from
  • Carbide-based hard material particles which are embedded in a cobalt-containing binder matrix.
  • a diamond layer is applied. It has been shown that between the
  • Graphite layer can arise. In the machining process, this acts as a predetermined breaking point at which the diamond layer can chip off, which leads to a reduced service life.
  • the object of the invention is a cutting element for a
  • PCD polycrystalline diamond
  • the invention is based on the finding that in the milling of an aluminum workpiece by means of PCD cutting elements, a chemical affinity of cobalt, which is contained in the metal matrix, to the aluminum is present. This means that at a correspondingly high cutting temperature, cobalt diffuses out of the PCD cutting element into the aluminum material.
  • the chemical affinity increases with increasing cutting temperature. This reaction increases the friction between chip and cutting edge. The cutting edge is therefore exposed to increased mechanical stress, which requires increased cutting edge strength.
  • the removal of the metallic binder phase leads in addition to a Strength reduction of the cutting edge, due to the exposure of the porosity of the PCD structure. With increasing strength of the too
  • Claim 1 the sintered body to increase the Schneidelement- wear resistance on a layer structure with at least one cobalt-free or binder-free diamond layer of diamond grains, which covers the sintered body at least in the region of the cutting edge closed area.
  • a direct contact of the metallic binder with a material to be processed is thus avoided in the cutting process. Diffusion of the metallic binder from the cutting element into the material to be processed (due to chemical affinity) is therefore prevented, whereby the service life of the tool is substantially increased compared to the prior art.
  • Such a material order "diamond on diamond” has in comparison to the above prior art (that is, material deposition diamond on
  • Diamond layer and the substrate can be prevented. Rather, the material order "diamond on diamond” behaves like a consistent one material of the same material, whereby an extremely high adhesion of the diamond layer, without the risk of chipping, is achieved.
  • the diamond grains applied in the application step show a high tendency to completely fill in the remaining free spaces of the diamond pore structure, which further increases the layer adhesion strength. Furthermore, a substantially completely uniform layer thickness of
  • Diamond layer achieved, which reduces the extent of post-processing.
  • Compressive residual stress of the diamond layer which also has a positive effect on the layer adhesion.
  • the low compressive residual stress enables a significantly increased layer thickness of the diamond layer compared to the prior art, without the risk of chipping.
  • the penetration of the diamond layer into the pores between the PCD diamond grains leads to a multiplication of the diamond grain boundaries, which leads to a significant increase in strength.
  • the average grain size of the diamond bodies in the sintered base body is considerably larger than the grain size of the diamond grains in the sintered body Diamond layer.
  • the diamond pore structure of the sintered body in this case is composed of diamond coarse grains, while in the
  • the diamond layer is composed of diamond fine grains whose
  • average grain size in the lower ⁇ range or especially even in the nm range can be.
  • average grain size of the diamond coarse grains in the ⁇ range can be average grain size in the lower ⁇ range or especially even in the nm range.
  • Layer structure of the sintered body additionally has a binder-free (that is, cobalt-free) intermediate layer which is disposed between the base body and the outer diamond layer.
  • a binder-free (that is, cobalt-free) intermediate layer which is disposed between the base body and the outer diamond layer.
  • the diamond bodies of the sintered base body form the already mentioned diamond pore structure whose interstices are filled with the metallic binder.
  • the method for producing a cutting element can be carried out as follows: For example, in a sintering process step known from the prior art, a sintered base body can be produced in which diamond grains are embedded in the metallic binder. It is important that a sufficient number of diamond-diamond grain boundaries are formed in the sintering process, so that after the Wegforden the metallic binder (that is, the binder / filler phase) is still a certain strength of the remaining PCD composite exists.
  • an etching step can take place in which the metallic binder is removed from the near-surface region of the base body to form a near-surface open pore structure in the sintered base body.
  • Diamond layer is applied in particular by a chemical vapor deposition (CVD) on the sintered body.
  • CVD chemical vapor deposition
  • the applied diamond grains are first infiltrated as filler in the near-surface open pore structure of the sintered body, whereby the intermediate layer is formed.
  • the applied diamond grains build up the outer diamond layer.
  • the application of the intermediate layer and the diamond layer may optionally be carried out a post-processing step in which, for example, by a grinding process material is removed to a final dimension of the cutting element.
  • a post-processing step in which, for example, by a grinding process material is removed to a final dimension of the cutting element.
  • Diamond layer is preferably dimensioned such that the in
  • Layer thickness of the outer diamond layer is.
  • FIG. 1 shows a side view of a milling tool
  • Figure 2 is a greatly enlarged sectional view through a
  • Figures 3 to 6 are views corresponding to the figure 2, the
  • a milling tool 1 is shown by way of example, the
  • the milling tool 1 has
  • Milling tool 1 formed with end cutting, which are facing the workpiece surface 3.
  • the milling tool 1 is driven with a rotational movement R about the tool axis W.
  • the milling tool 1 is driven with a feed movement V (FIG. 1) transversely to the tool axis W and along the workpiece surface 3. In this way, the milling tool 1 cuts the material mainly with the peripheral blades 7, while the end cutting scrape only the machined workpiece surface 9.
  • FIG. 2 shows the material structure of one of the cutting elements 5, specifically along the sectional plane A-A from FIG. 1. Accordingly, the cutting element 5 a leading in the direction of rotation R of the milling tool 1 rake face 9 and a trailing in the tool rotation R free space 1 1, which at a cutting edge 13 of
  • Peripheral cutting 7 converge.
  • the cutting element 5 formed of a sintered base body 15, are embedded in the diamond coarse grains 17 in a metallic, cobalt-containing binder 19.
  • the diamond coarse grains 17 are in point contact with each other, thereby forming a porous diamond network (hereinafter also diamond pore structure) in which the diamond grains are chemically bonded by sintering necks small in area relative to their grain size.
  • the porous diamond network hereinafter also diamond pore structure
  • a double layer structure 20 ( Figure 2) is applied, which consists of a cobalt-free or binder-free outer
  • Diamond layer 21 and an intermediate layer 23 which is disposed between the outer diamond layer 21 and the sintered base body 15.
  • the diamond layer 21 has a layer thickness S3 in FIG. 2, which includes the sintered base body 15 and the intermediate layer 23
  • the diamond layer 21 is formed of fine diamond grains 25 whose average grain size is much smaller than the average grain size of the diamond coarse grains 17 in the sintered base body 15.
  • the binder-free (that is cobalt-free) intermediate layer 23 is in view of an increased adhesive strength of the diamond layer 21 and for a
  • the base body 15 Increasing the strength of the PCD composite (that is, the base body 15) provided.
  • the diamond pore structure in the near-surface region of the sintered base body 15 is no longer filled with the metallic binder 19, but rather is replaced by the diamond fine grains 25 of the diamond layer 21.
  • the diamond Fine grains 25 of the diamond layer 21 are therefore infiltrated as Feedbackmate al in the near-surface diamond pore structure of the sintered body 15.
  • Sintering process forms a metal-graphite mixture, which is exposed to a very high process pressure and a very high process temperature.
  • the diamond pore structure is formed with the diamond coarse grains 17, which are completely embedded in the metallic binder 19.
  • an etching step takes place.
  • Base 15 formed by the metallic binder 19 is etched away from a near-surface region of the sintered body 15.
  • the open diamond pore structure 27 has a layer thickness s1 in FIG.
  • WO 2004/031437 A1 discloses such an etching step (in order to produce a sufficient layer adhesion of the diamond layer to hard metal). From DE 195 22 371 A1 it is likewise known to provide a cobalt-selective etching step with subsequent cleaning of the etched substrate surface prior to the application of a diamond layer. In the same way, a method for diamond coating of a cemented carbide substrate is known from US 6 096 377 A1, in which a
  • Cobalt selective etching step is used. From WO 2004/031437 A1, moreover, a chemical etching step is known in which the metallic binder, in particular the cobalt contained therein, is removed. This is followed by an application step ( Figure 5), in which the sintered
  • Base body 15 with the binder-free, that is cobalt-free diamond layer 21 is coated.
  • the application step is carried out by depositing a polycrystalline diamond film by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • Such a method is known, for example, from US Pat. No. 5,082,359 A.
  • WO 98/35071 A1 likewise discloses depositing a polycrystalline diamond film on a cemented carbide substrate made of a tungsten carbide embedded in a cobalt matrix (WO 2004/031437 A1).
  • the application step according to FIG. 5 is carried out in two stages: First, the diamond fine grains 25 are infiltrated as filling material into the open pore structure 27 of the sintered base body 15, whereby the intermediate layer 23 is formed. In the further course of the CVD application, the diamond layer 21 is then built up with a layer thickness S2 by the diamond fine grains 25.
  • Post-processing step carried out in which a material removal ⁇ takes place in a grinding process in order to produce the cutting element 5 to a final dimension.
  • the material removal ⁇ is smaller in FIG. 6 than the layer thickness S3 of the diamond layer 21. In this way, it is ensured that a residual layer thickness S3 of the diamond layer 21 remains even after the finishing, in order to reliably prevent a diffusion of cobalt into the aluminum material of the workpiece 3.
  • an adhesive preferably sub- ⁇ crystalline diamond layer 21 on the PCD cutting element
  • the layer thickness of the diamond layer 21 can be, for example, 7 ⁇ m, a perfect layer connection being achieved without the risk of spalling. Due to the material identity between the diamond layer 21 and the diamond pore structure in the intermediate layer 23 and in the sintered base body 15 results in the diamond layer 21 an extremely low compressive residual stress, whereby the diamond layer 21 can be applied significantly thicker than in a comparable sintered body made of hard metal without this being critical for the stability of the cutting edge.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)

Abstract

L'invention concerne un élément de coupe pour un outil d'usinage par enlèvement, notamment un outil de fraisage (1), présentant au moins un bord de coupe par enlèvement (13), l'élément de coupe (5) présentant un corps de base fritté (15) dans lequel des grains de diamant (17) sont incorporés dans un liant métallique (19), notamment de cobalt ou d'un alliage de cobalt. Selon l'invention, le corps de base fritté 815) présente une structure en couche (20) comprenant au moins une couche de diamant extérieure (21) sans cobalt ou sans liant constituée de grains de diamant (25), cette couche recouvrant le corps de base (15) de manière ininterrompue au moins dans la zone du bord de coupe (13).
PCT/EP2018/055057 2017-03-06 2018-03-01 Élément de coupe pour outil d'usinage par enlèvement et procédé de fabrication d'un tel élément de coupe WO2018162321A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017002154.6A DE102017002154A1 (de) 2017-03-06 2017-03-06 Schneidelement für ein Spanbearbeitungswerkzeug sowie Verfahren zur Herstellung eines solchen Schneidelementes
DE102017002154.6 2017-03-06

Publications (1)

Publication Number Publication Date
WO2018162321A1 true WO2018162321A1 (fr) 2018-09-13

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ID=61622541

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/055057 WO2018162321A1 (fr) 2017-03-06 2018-03-01 Élément de coupe pour outil d'usinage par enlèvement et procédé de fabrication d'un tel élément de coupe

Country Status (2)

Country Link
DE (1) DE102017002154A1 (fr)
WO (1) WO2018162321A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3824713A1 (fr) * 2019-11-25 2021-05-26 Ceratizit Luxembourg Sàrl Élément de coupe, utilisation correspondante et dispositif de coupe mobile correspondant

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082359A (en) 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
DE19522371A1 (de) 1994-10-17 1996-04-18 Samsung Electronics Co Ltd Magnetische Verriegelungsvorrichtung für den Kopfhalter eines Festplattenantriebs
WO1998035071A1 (fr) 1997-02-05 1998-08-13 Cemecon-Ceramic Metal Coatings-Dr.-Ing. Antonius Leyendecker Gmbh Revetement de matiere dure d'un substrat en carbure fritte ou en cermet contenant du carbure
US6096377A (en) 1997-11-07 2000-08-01 Balzers Hochvakuum Ag Process for coating sintered metal carbide substrates with a diamond film
US6344149B1 (en) * 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
WO2004031437A1 (fr) 2002-09-27 2004-04-15 Cemecon Ag Procede de revetement et corps ainsi revetu
CN101476445A (zh) * 2008-12-24 2009-07-08 陈继锋 覆盖cvd金刚石层的钻探用金刚石复合片及制作方法
US20140060937A1 (en) * 2012-08-31 2014-03-06 Diamond Innovations, Inc. Polycrystalline diamond compact coated with high abrasion resistance diamond layers
DE102014210371A1 (de) 2014-06-02 2015-12-03 Gühring KG Diamantbeschichtetes spanabhebendes Werkzeug und Verfahren zu seiner Herstellung
CN105349965A (zh) * 2015-11-03 2016-02-24 富耐克超硬材料股份有限公司 一种聚晶金刚石复合片及其制备方法

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
JPH06297206A (ja) 1993-04-09 1994-10-25 Sumitomo Electric Ind Ltd 硬質焼結体工具およびその製造方法
DE19629456C1 (de) 1996-07-23 1997-11-20 Fraunhofer Ges Forschung Werkzeug, insbesondere für die spanende Materialbearbeitung
DE19731018C2 (de) 1997-07-18 1999-05-12 Fraunhofer Ges Forschung Dentalwerkzeug
DE102013218446A1 (de) 2013-09-13 2015-03-19 Cemecon Ag Werkzeug sowie Verfahren zum Zerspanen von faserverstärktenMaterialien

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082359A (en) 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
DE19522371A1 (de) 1994-10-17 1996-04-18 Samsung Electronics Co Ltd Magnetische Verriegelungsvorrichtung für den Kopfhalter eines Festplattenantriebs
WO1998035071A1 (fr) 1997-02-05 1998-08-13 Cemecon-Ceramic Metal Coatings-Dr.-Ing. Antonius Leyendecker Gmbh Revetement de matiere dure d'un substrat en carbure fritte ou en cermet contenant du carbure
US6096377A (en) 1997-11-07 2000-08-01 Balzers Hochvakuum Ag Process for coating sintered metal carbide substrates with a diamond film
US6344149B1 (en) * 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
WO2004031437A1 (fr) 2002-09-27 2004-04-15 Cemecon Ag Procede de revetement et corps ainsi revetu
CN101476445A (zh) * 2008-12-24 2009-07-08 陈继锋 覆盖cvd金刚石层的钻探用金刚石复合片及制作方法
US20140060937A1 (en) * 2012-08-31 2014-03-06 Diamond Innovations, Inc. Polycrystalline diamond compact coated with high abrasion resistance diamond layers
DE102014210371A1 (de) 2014-06-02 2015-12-03 Gühring KG Diamantbeschichtetes spanabhebendes Werkzeug und Verfahren zu seiner Herstellung
CN105349965A (zh) * 2015-11-03 2016-02-24 富耐克超硬材料股份有限公司 一种聚晶金刚石复合片及其制备方法

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