WO2018161643A1 - Stress control method - Google Patents
Stress control method Download PDFInfo
- Publication number
- WO2018161643A1 WO2018161643A1 PCT/CN2017/113206 CN2017113206W WO2018161643A1 WO 2018161643 A1 WO2018161643 A1 WO 2018161643A1 CN 2017113206 W CN2017113206 W CN 2017113206W WO 2018161643 A1 WO2018161643 A1 WO 2018161643A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ions
- stress
- atom
- hydrogen
- oxygen
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 422
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 230000008859 change Effects 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 8
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 8
- -1 hydrogen ions Chemical class 0.000 claims description 81
- 229910052739 hydrogen Inorganic materials 0.000 claims description 54
- 239000001257 hydrogen Substances 0.000 claims description 54
- 239000001301 oxygen Substances 0.000 claims description 49
- 229910052760 oxygen Inorganic materials 0.000 claims description 49
- 239000002608 ionic liquid Substances 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- 125000004429 atom Chemical group 0.000 claims description 25
- 230000033228 biological regulation Effects 0.000 claims description 22
- 239000003054 catalyst Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 239000002086 nanomaterial Substances 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 18
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 229910052734 helium Inorganic materials 0.000 claims description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 14
- 229910001422 barium ion Inorganic materials 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910001415 sodium ion Inorganic materials 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 4
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 229910001424 calcium ion Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 150000002641 lithium Chemical group 0.000 claims description 4
- 229910001416 lithium ion Inorganic materials 0.000 claims description 4
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910001414 potassium ion Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 125000004436 sodium atom Chemical group 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 125000004434 sulfur atom Chemical group 0.000 claims description 4
- 230000005226 mechanical processes and functions Effects 0.000 claims description 3
- 239000002127 nanobelt Substances 0.000 claims description 3
- 239000002121 nanofiber Substances 0.000 claims description 3
- 239000002073 nanorod Substances 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- 239000002070 nanowire Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 30
- 230000037431 insertion Effects 0.000 abstract description 30
- 238000000605 extraction Methods 0.000 abstract description 27
- 230000002045 lasting effect Effects 0.000 abstract 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 17
- 229910003321 CoFe Inorganic materials 0.000 description 16
- 230000008901 benefit Effects 0.000 description 15
- 238000002441 X-ray diffraction Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000003792 electrolyte Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910000314 transition metal oxide Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000002033 PVDF binder Substances 0.000 description 6
- 150000001450 anions Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 229910004121 SrRuO Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910001427 strontium ion Inorganic materials 0.000 description 3
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 3
- 238000013268 sustained release Methods 0.000 description 3
- 239000012730 sustained-release form Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical compound C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 238000000155 in situ X-ray diffraction Methods 0.000 description 2
- 238000012966 insertion method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000010416 ion conductor Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910000730 Beta brass Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 229910002399 SrCoO3−δ phase Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- PBHRBFFOJOXGPU-UHFFFAOYSA-N cadmium Chemical compound [Cd].[Cd] PBHRBFFOJOXGPU-UHFFFAOYSA-N 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000003181 co-melting Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000990 laser dye Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
- G01N2223/1016—X-ray
Definitions
- the present application relates to the field of material technology, and in particular to a stress control method.
- Stress is an internal force that creates an interaction between parts of an object when it is deformed by external factors (force, humidity, temperature field changes, etc.). Stress regulation changes the stress of an object, and it can apply stress or release stress.
- the internal structure of a substance changes under stress control, and a series of physical properties of the substance (such as electromagnetic properties, transport properties, dielectric properties, etc.) also change.
- a conventional method of applying integral stress is to apply pressure to a sample in a sample chamber through a pressure transmitting medium using a diamond to thimble.
- the stress applied by the method of diamond to thimble can reach the order of 100 Gpa.
- a conventional method of applying biaxial stress is to deposit a film material on a substrate PMN-PT using 0.67 Pb (Mg 1/3 Nb 2/3 )O 3 -0.33 PbTiO 3 (PMN-PT) as a substrate.
- the substrate PMN-PT deforms under an applied electric field, thereby providing biaxial stress to the upper film.
- the applied electric field strength of PMN-PT is 10kV/cm, the in-plane stress can reach 0.63%.
- the traditional method of applying uniaxial stress is to use a ZnO 2 piston to the top sample.
- the stress that can be achieved by the method of using the ZnO 2 piston to the top sample reaches the order of 100 MPa.
- the 1% stress can be equivalent, and the traditional method of applying uniaxial stress can achieve stress regulation of no more than 1%. It can be seen that the uniaxial and biaxial stress-applying methods in the conventional scheme cannot apply large stresses.
- the sample is restored to the state where it is initially unstressed, and the stress state cannot be effectively maintained.
- a stress control method comprising: S10, providing a first material having a structural formula of ABO x H y , wherein A is one or more of an alkaline earth metal element and a rare earth metal element, and B is a transition metal element Or multiple, x ranges from 1-3, and y ranges from 0 to 3;
- the ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen
- the atom includes a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine.
- a hydrogen atom a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine.
- a hydrogen atom a lithium atom, a sodium atom, a potassium atom, a helium atom, a heli
- the second material comprises one or more of a metal element, a metal oxide, an alloy.
- the second material comprises a nano material comprising zero-dimensional clusters, artificial atoms, nanoparticles; one-dimensional nanowires, nanotubes, nanorods, nanofibers; two-dimensional Nanobelts, ultrathin films, multilayer films.
- the second material comprises an organic functional material including an organic material having mechanical functions, an organic material having chemical functions, an organic material having physicochemical functions, and an organic having biochemical functions. Materials, organic materials with electrical functions.
- the S30 includes:
- the ionic liquid is at a high potential
- the first material is at a low potential
- hydrogen ions in the ionic liquid are inserted into the first material or oxygen ions from the first
- the material is extracted such that the out-of-plane lattice constant of the first material is increased to apply a tensile stress to the second material to effect stress regulation of the second material.
- the ionic liquid is at a low potential
- the first material is at a high potential
- oxygen ions in the ionic liquid are inserted into the first material or hydrogen ions from the first
- the material is extracted such that the out-of-plane lattice constant of the first material is reduced, thereby applying a compressive stress to the second material to effect stress regulation of the second material.
- the S30 includes:
- the S30 includes:
- the stress control method provided by the present application provides a first material and a second material.
- the structural formula of the first material is ABO x H y .
- A is one or more of an alkaline earth metal element and a rare earth metal element.
- B is one or more of transition metal elements.
- the value of x ranges from 1-3, and the range of y ranges from 0 to 3.
- the first material is contacted with the second material. And forming a contact interface between the first material and the second material.
- the lattice constant of the first material is changed by the insertion or extraction of particles. Stress regulation of the second material is achieved by a change in the lattice constant of the first material.
- the stress control method provided by the present application the first material can apply a permanent and large stress to the second material through the contact interface.
- FIG. 1 is a flow chart of a stress control method according to an embodiment of the present application.
- FIG. 2a is a schematic structural view of a first material and a second material having a 2-2 type structure in a stress control method according to an embodiment of the present application;
- FIG. 2b is a schematic structural view of a first material and a second material having a 0-0 type structure in a stress control method according to an embodiment of the present application;
- 2c is a schematic structural view of a first material and a second material having a 1-3 type structure in a stress control method according to an embodiment of the present application;
- 2d is a schematic structural view of a first material and a second material having a 0-3 type structure in a stress control method according to an embodiment of the present application;
- FIG. 3 is a schematic diagram of a process for inserting or extracting particles by using an ionic liquid plus electric field method in a stress control method according to an embodiment of the present application;
- FIG. 4 is a schematic view showing a process of inserting or extracting particles by using a method of hydrogenating a metal catalyst in a stress control method according to an embodiment of the present application;
- FIG. 5 is a schematic diagram of a process for inserting or extracting particles by using an ozone annealing method in a stress control method according to an embodiment of the present application;
- FIG. 6 is an X-ray diffraction diagram of a first material before and after stress control according to another embodiment of the present application.
- FIG. 7 is a partial enlarged view of an X-ray diffraction pattern of a first material before and after stress control according to another embodiment of the present application.
- FIG. 8 is an X-ray diffraction diagram of a first material before and after stress control according to another embodiment of the present application.
- FIG. 9 is a partial enlarged view of an X-ray diffraction pattern of a first material before and after stress control according to another embodiment of the present application.
- FIG. 10 is a topographical view of a first material and a second material provided by another embodiment of the present application.
- Figure 11 is an X-ray diffraction diagram of a first material and a second material provided in still another embodiment of the present application;
- a stress control method provided by the present application includes:
- A is one or more of an alkaline earth metal element and a rare earth metal element.
- B is one or more of transition metal elements.
- the value of x ranges from 1-3, and the range of y ranges from 0 to 3.
- A is one or more of an alkaline earth metal element and a rare earth metal element.
- B is one or more of transition metal elements.
- the value of x ranges from 1-3, and the range of y ranges from 0 to 3. In one embodiment, the value of x ranges from 1-3, and the range of y ranges from greater than 0 to less than or equal to 3.
- the ratio of A and B in ABO x H y is not necessarily strictly 1:1. The ratio of the A and B, which because of vacancy and interstitial atom and the like in the ABO x H y departing generated.
- the alkaline earth metal may include one or more of Be, Mg, Ca, Sr, Ba.
- the rare earth metal element may include one or more of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb.
- the transition group element may include one or more of Co, Cr, Fe, Mn, Ni, Cu, Ti, Zn, Sc, and V. It can be understood that A can also be a mixture of an alkaline earth metal and a rare earth metal.
- B may also be a mixture of a transition metal and a main group metal.
- the first material 110 may be a hydrogen-containing transition metal oxide of the formula ABO x H y .
- the contact interface is a contact surface of the first material 110 and the second material 120.
- the contact interface may be a regular shape or an irregular shape.
- the shape of the contact interface may be determined according to different configurations of the first material 110 and the second material 120.
- the first material 110 and the second material 120 are alternately layered, and the contact interface is a boundary where the two materials contact each other.
- the atoms of the first material 110 and the second material 120 at the contact interface are tightly connected at together.
- the atomic arrangement of the second material 120 also varies. Thereby a stress is applied to the second material 120.
- the first material 110 can regulate the magnitude of the stress received by the second material 120 by inserting or extracting particles.
- the particles include one or more of ions and atoms.
- Inserting particles into the first material 110, insertion can be understood as combining with the first material 110 to form a new structure.
- the lattice constant of the new structure formed is different from the lattice constant of the first material 110.
- the particles include one or more of ions and atoms. Insertion or extraction of one or more particles, insertion or extraction of one or more ions, and insertion or extraction of one or more atoms can also be achieved.
- the methods of inserting or extracting particles include: an ionic liquid plus electric field method, a different gas atmosphere catalysis method, a different gas atmosphere annealing method, or an electrolyte insertion method.
- the above series of methods for providing insertion or extraction of particles are merely examples, and the specific method of providing ions or atoms is not limited as long as the insertion or extraction of particles can be achieved.
- the stress of the second material 120 is adjusted by changing the lattice constant of the first material 110.
- the lattice constant of the first material 110 can be effectively adjusted by the insertion or extraction of particles.
- the lattice constant of the second material 120 is further changed by the coupling effect of the interface. Effective regulation of the magnitude of the stress of the second material 120 is achieved.
- the first material 110 can apply a permanent stress to the second material 120 through the contact interface.
- the lattice constant of the first material 110 is changed, and stress may be applied to the second material 120.
- the change in the lattice constant of the first material 110 also causes a change in the lattice constant of the second material 120.
- the change in the lattice constant of the second material 120 also brings about a change in the stress state of the second material 120.
- the stress control method provided by the present application is more stress applied than the conventional method. Specifically, the tensile stress applied by the stress control method provided by the present application can reach 6% or even higher, and the compressive stress applied by the stress control method provided by the present application can be 3.5% or even higher.
- the ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur.
- ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen
- the atom includes a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine.
- a hydrogen atom a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine.
- a hydrogen atom a lithium atom, a sodium atom, a potassium atom, a helium atom, a heli
- the insertion or extraction of the particles can be achieved by an electrolyte insertion method.
- a positively charged cation such as a lithium ion, a sodium ion, a potassium ion, a cesium ion, a strontium ion, a magnesium ion, a calcium ion, a strontium ion or a strontium ion
- an electrode may be provided in the electrolyte containing the cation described above.
- a sample to be inserted or withdrawn from the particles is disposed in the electrolyte. Then, the above cation is inserted into the sample by applying a potential higher than the sample to the electrode.
- the sample is composed of the first material 110 and the second material 120, the first material 110 and the second material 120 are in contact and form a contact between the first material 110 and the second material 120 interface.
- the above cation insertion or extraction changes the lattice constant of the first material 110.
- Different degrees of stress are applied to the second material 120 by the first material 110.
- a cationic conductor electrolyte Na- ⁇ -Al 2 O 3 , can be provided.
- the Na- ⁇ -Al 2 O 3 is substantially NaAl 11 O 17 , and the electrolyte NaAl 11 O 17 can generate sodium ions, in which sodium ions can move, and is inserted into the first material under the drive of an applied electric field. 110, or extracted from the first material 110.
- anions such as nitrogen ions, fluoride ions, phosphorus ions, sulfur ions, selenium ions, etc.
- a potential lower than the sample on the counter electrode in the electrolyte containing the above anions.
- the sample is provided in the electrolyte containing the above anion.
- a high potential is applied to the electrode to extract the anion.
- an anion conductor electrolyte, lead fluoride PbF 2 can be provided.
- the electrolyte lead fluoride PbF 2 may generate fluorine ions in which fluorine ions may freely move and are inserted into or withdrawn from the first material 110 by an applied electric field.
- Similar fluoride ion conductors may also be CaF 2 , SrF 2 , BaF 2 and materials having a fluoranthene and YF 3 structure.
- An oxygen ion conductor electrolyte can also be provided to effect insertion or extraction of oxygen ions, such as Zr(Y)O 2 .
- a lithium atom, a sodium atom, a potassium atom, a ruthenium atom, a ruthenium atom, a magnesium atom, a calcium atom, a ruthenium atom, a ruthenium atom, a nitrogen atom, a phosphorus atom, a sulfur atom, or a selenium atom can be inserted or extracted in a manner similar to the foregoing.
- the atoms diffused into the first material 110 may be in a free form in the first material 110, and may also react with the first material 110 to form a bond.
- the insertion or extraction of fluorine atoms can also be achieved by fluorine-containing organic or fluorine-containing nanomaterials. Specifically, it can be spin-coated to the first material by a vinylidene fluoride (PVDF) solution.
- PVDF vinylidene fluoride
- the surface of the 110 further anneals the first material 110 to promote diffusion of fluorine atoms into the first material 110 and react with the first material 110 to form fluoride.
- a method of achieving stress regulation by changing the lattice constant of the first material 110 is within the scope of the present application.
- the second material 120 comprises one or more of a metal element, a metal oxide, an alloy.
- the second material 120 is a simple substance of metal.
- the metal element includes one or more of potassium, calcium, sodium, magnesium, aluminum, zinc, iron, copper, lead, and nickel. It can be understood that the metal element can be any metal element.
- the second material 120 is a simple substance of metal.
- the properties of the second material 120 can be effectively changed by changing the lattice constant of the first material 110 in this embodiment. For example, a tensile stress or a compressive stress is applied to the metal element by changing the lattice constant of the first material 110. After the stress of the metal element is changed, the ductility, electrical conductivity and thermal conductivity of the metal element are correspondingly changed.
- the second material 120 is a metal oxide.
- the metal oxide is a binary compound composed of an oxygen element and another metal chemical element such as iron oxide (Fe 2 O 3 ), nickel oxide (NiO), or the like.
- An important role of the metal oxide is as a catalyst, which plays an important role in different reactions.
- the first material 110 is the hydrogen-containing transition metal oxide
- the second material 120 is a metal oxide. A tensile stress or a compressive stress is applied to the metal oxide by changing the lattice constant of the first material 110, thereby further changing the catalytic properties of the metal oxide, and improving the catalytic efficiency of the metal oxide.
- the second material 120 is an alloy.
- the alloy is a material having metal characteristics synthesized by a certain method from two or more metals and metals or nonmetals. Alloys can be divided into: mixture alloys (eutectic mixtures), solid solution alloys, and intermetallic compounds.
- the alloy of the mixture (co-melting mixture) is an alloy formed by crystallizing the components of the alloy when the liquid alloy is solidified, such as solder, cadmium-cadmium alloy or the like.
- the solid solution alloy is an alloy that forms a solid solution when the liquid alloy solidifies, such as a gold-silver alloy or the like.
- the intermetallic compound that is, an alloy in which the components form a compound with each other, such as brass composed of copper or zinc ( ⁇ -brass, ⁇ -brass, and ⁇ -brass).
- the first material 110 is the hydrogen-containing transition metal oxide
- the second material 120 is an alloy.
- the second material 120 comprises a nanomaterial.
- the nanomaterial is based on a nanoscale material unit, and a new system is constructed or assembled according to a certain rule.
- the nanomaterials can be divided into blocks, films, multilayer films, and nanostructures.
- the basic constituent units of the nano material are zero-dimensional nano materials, one-dimensional nano materials, and two-dimensional nano materials.
- Zero-dimensional nanomaterials can be clusters, artificial atoms, and nanoparticles.
- One-dimensional nanomaterials can be nanowires, nanotubes, nanorods, and nanofibers.
- the two-dimensional nano material can be a nanobelt, an ultrathin film, or a multilayer film.
- the nanostructures are in contact with the hydrogen-containing transition metal oxide, and the interatomic interactions at the interface cause the atoms to be tightly coupled together.
- the lattice constant of the hydrogen-containing transition metal oxide changes, tensile stress or compressive stress is applied to the nanomaterial. After the nanomaterial is subjected to stress adjustment, its crystal structure changes. Because some properties of nanomaterials, such as the energy level structure, depend on the specific lattice structure and applied stress of the material itself. Therefore, when the lattice constant of the first material 110 is changed, the lattice constant of the second material 120 also changes. The lattice constant of the second material 120 is changed to affect the energy level structure of the second material 120, so that the second material 120 exhibits superior performance. For example, high nonlinear optical effects, light absorption, light reflection and light transport properties, specific catalytic properties, strong oxidative properties and reducibility.
- the nanomaterials may include graphene and carbon nanotubes.
- the second material 120 comprises an organic functional material.
- the organic functional material refers to organic small molecules, supramolecular and polymeric materials having unique physical and chemical properties (functions).
- the main functional types of the organic functional materials are: mechanical function, chemical function, physical and chemical function, biochemical function, and electrical function.
- the organic functional materials are: liquid crystal materials, laser dyes, photochromic materials, photoconductive materials, solar cell materials, organic dielectric materials.
- the organic dielectric material such as polyvinylidene fluoride (PVDF), has a change in dielectric properties under applied stress.
- the first material 110 is the hydrogen-containing transition metal oxide ABO x H y and the second material 120 is an organic dielectric material PVDF.
- a tensile stress or a compressive stress is applied to the organic dielectric material PVDF by changing a lattice constant of the first material 110, thereby further changing the dielectric properties of the organic dielectric material PVDF.
- the above figures show four different configurations of the first material 110 and the second material 120.
- the regulation of the stress of the second material 120 in the above four configurations can be achieved by the control method of the present application.
- the four different configurations in the figures can be deposited on the substrate 140 or form an individual support structure.
- the first material 110 and the second material 120 are alternately layered.
- the thickness of the layer is not limited. Can root The thickness of each layer is set according to the size and uniformity of the stress to be regulated.
- the first materials 110 are distributed in a block-like interval.
- the second material 120 is the same shape as the first material 110.
- the second material 120 and the first material 110 are alternately layered in a vertical direction.
- a third material 130 may also be included.
- the third material 130 is distributed in a block array formed by the first material 110 and the second material 120. It can be understood that the first material 110 and the second material 120 are alternately layered in the vertical direction. In the vertical direction, alternating layers are added upwards. And spaced apart in the horizontal direction, that is, the first material 110 and the second material 120 constitute a layered array. A gap is formed between one of the layered arrays and the other of the layered arrays.
- a third material 130 is distributed at the interval formed by the first material 110 and the second material 120. Specifically, a third material 130 is distributed between the adjacent first materials 110 and between the adjacent second materials 120.
- the adjustment of the stress magnitude of the second material 120 and the third material 130 can be simultaneously achieved by the change in the lattice constant of the first material 110.
- the first material 110 is the hydrogen-containing transition metal oxide
- the second material 120 is a magnetostrictive material.
- the lattice constant of the first material 110 is changed by an ionic liquid plus electric field method, thereby achieving a change in the stress magnitude of the magnetostrictive material. That is, magnetoelectric coupling is achieved.
- the third material 130 is selected as a photostrictive material, lead zirconate titanate (PLZT) ceramic.
- PZT lead zirconate titanate
- the third material 130 may be selected from the material of the second material 120 and different from the material of the second material 120.
- the third material 130 may be a conductive material in a metal oxide, such as SrRuO 3 .
- SrRuO 3 a metal oxide
- an ionic liquid is further applied to effect insertion or extraction of ions.
- the lattice constant of the first material 110 is changed, thereby regulating the stress level of the second material 120 and the third material SrRuO 3 .
- the first material 110 is brought into contact with the second material 120.
- the step of forming the contact interface is specifically such that one of the first material 110 and the second material 120 is wrapped by another material.
- one of the first material 110 and the second material 120 is wrapped by another material.
- the second material 120 may wrap the first material 110. It is also possible that the first material 110 wraps the second material 120.
- the first material 110 is dispersed in the second material 120 in a dot shape, a line shape, a surface shape or a body shape. It can be understood that the first material 110 is dispersed in the second material 120 in different shapes. The shape and configuration of the first material 110 are not specifically limited. The first material 110 and the second material 120 have a contact interface that enables the second material 120 to vary depending on the change of the first material 110.
- the first materials 110 form an array.
- the second material 120 wraps the first material 110, and the array includes the first material 110 in a columnar shape.
- the first material 110 is an intermediate columnar array.
- the first material 110 is the hydrogen-containing transition metal oxide.
- the second material 120 is in contact with the first material 110.
- the first material 110 and the second material 120 have a contact interface.
- the lattice constant of the first material 110 is changed by insertion or extraction of ions or insertion or extraction of atoms.
- the regulation of different stress levels of the second material 120 is achieved by the contact interface.
- the first material 110 forms an array and the second material 120 wraps the first material 110.
- the array includes the first material 110 in a block shape.
- the first material 110 is an intermediate block array, and the first material 110 is the hydrogen-containing transition metal oxide.
- the second material 120 is in contact with the first material 110.
- the first material 110 and the second material 120 have a contact interface.
- the contact interface between the first material 110 and the second material 120 is relatively large, and the corresponding stress control capability is relatively strong. It can be understood that, in a specific application process, any of the first material 110 and the second material 120 adopting four configurations may be further determined according to different requirements.
- FIG. 3 is a schematic diagram of a process for inserting or extracting particles by using an ionic liquid plus electric field method in the stress control method provided by the present application.
- a first material 110 and a second material 120 are deposited on the substrate 140 in FIG.
- the S30 includes:
- an ionic liquid 202 is provided.
- the ionic liquid 202 contains hydrogen ions and oxygen ions, and the first material 110 and the second material 120 are disposed in the ionic liquid 202.
- the ionic liquid 202 contains hydrogen ions and oxygen ions.
- the type of the ionic liquid 202 may be various as long as the desired hydrogen ions and oxygen ions can be supplied by hydrolysis or other means.
- the first material 110 and the second material 120 may be immersed in the ionic liquid 202. This enlarges the contact area of the first material 110 and the second material 120 with the ionic liquid 202. Ions in the ionic liquid 202 are facilitated to diffuse into the first material 110.
- an electric field is applied to the ionic liquid 202 such that hydrogen ions or oxygen ions in the ionic liquid 202 are inserted into the first material 110, or hydrogen ions or oxygen ions are extracted from the first material 110.
- the first electrode 210 may be formed on the surface of the first material 110 and the second material 120.
- the shape of the first electrode 210 is not limited and may be a parallel plate electrode, a rod electrode, or a metal mesh electrode.
- Hydrogen ion insertion and oxygen ion extraction in the ionic liquid 202 are controlled by the direction of the electric field to extract the first material 110, or oxygen ion insertion and hydrogen ion extraction of the first material 110.
- Hydrogen ions and oxygen ions are derived from water in the ionic liquid 202. In the ionic liquid 202, the content of water is not limited. Experiments have confirmed that the diffusion of hydrogen ions and oxygen ions described above can be achieved as long as the ionic liquid 202 has a small amount of water (>100 ppm).
- the S303 further includes: providing the second electrode 220 and the power source 230.
- the second electrode 220 is spaced apart from the first electrode 210 and electrically connected to the power source 230, respectively.
- the shape of the second electrode 220 is not limited, and may be a parallel plate electrode, a rod electrode, or a metal mesh electrode.
- the second electrode 220 is an electrode composed of a spring-like wire.
- the power source 230 can be various DC, AC power sources 230, and the like.
- the voltage of the power source 230 is adjustable and can be used to control the reaction time.
- the second electrode 220 is spaced apart from the first electrode 210.
- An oriented electric field is formed between the second electrode 220 and the first electrode 210.
- the second electrode 220 and the first electrode 210 are connected to the DC power source 230 in an unrestricted manner, and a voltage may be applied to the second electrode 220 and the second electrode 220 by switch control.
- the direction in which the electric field is applied can be controlled by the manner in which the power source 230 is connected to the first electrode 210 and the second electrode 220.
- the insertion or extraction of ions or the insertion or extraction of atoms is carried out by means of an ionic liquid plus an electric field.
- the ionic liquid 202 When the ionic liquid 202 is at a high potential, the first material 110 is at a low potential.
- the positively charged hydrogen ions diffuse from the high potential region into the low potential region.
- Negatively charged oxygen ions diffuse from the low potential region into the high potential region.
- Hydrogen ions are inserted into the first material 110 while oxygen ions are extracted.
- the out-of-plane lattice constant of the first material 110 is increased.
- a tensile stress is applied to the second material 120 through the contact interface.
- the ionic liquid 202 When the ionic liquid 202 is at a low potential, the first material 110 is at a high potential.
- the positively charged hydrogen ions diffuse from the high potential region into the low potential region.
- Negatively charged oxygen ions diffuse from the low potential region into the high potential region.
- Oxygen ions are inserted into the first material 110 while hydrogen ions are extracted.
- the first material 110 The out-of-plane lattice constant is reduced.
- a compressive stress is applied to the second material 120 through the contact interface.
- FIG. 4 is a schematic diagram of a process for inserting or extracting particles by using a method for hydrogenating a metal catalyst in a stress control method according to an embodiment of the present application.
- the first material 110 and the second material 120 are deposited on the substrate 140 in FIG.
- the S30 includes:
- the metal catalyst 201 is not limited as long as it can catalyze the decomposition of hydrogen to generate hydrogen ions.
- the material of the metal catalyst 201 may be various metals such as platinum, palladium, gold, or the like.
- the metal catalyst 201 may be platinum or palladium.
- the structure of the metal catalyst 201 may be a nano thin film of a metal, a nanoparticle or a strip electrode. It can be understood that the metal catalyst 201 can also be in contact with the surface of the first material 110 to facilitate the insertion of the hydrogen ions into the first material 110.
- the method of hydrogenating the metal catalyst of this embodiment can be carried out in a reaction chamber.
- the specific form of the reaction chamber is not limited.
- the reaction chamber is a sphere having an opening for taking a test sample.
- the reaction chamber also has a charging and discharging port, an observation window, a heating device and a vacuuming device.
- the hydrogen-containing reaction gas is charged into the reaction chamber.
- the reaction chamber can maintain a dynamically balanced pressure.
- the hydrogen-containing reaction gas may be pure hydrogen. For safety reasons and to isolate oxygen from the air, a slow release gas can be mixed in the hydrogen. Therefore, the hydrogen gas that is introduced may also be a mixed gas of different ratios of hydrogen gas and slow-release gas.
- the sustained release gas may be nitrogen, helium, neon, argon, helium, neon or xenon.
- the volume content of the hydrogen gas is 3% to 100%.
- the sustained release gas is selected from argon.
- a mixed gas of hydrogen gas and argon in a volume ratio of 5:95 is used.
- the metal catalyst 201 can be mixed with the first material 110 and the second material 120 in advance.
- the hydrogen-containing reaction gas generates hydrogen atoms under the action of the metal catalyst 201 during heating and heating.
- the hydrogen atoms are diffused into the first material 110.
- the transition metal oxide can be hydrogenated under the action of a catalyst at room temperature.
- Heating the said The reaction chamber is raised to raise the temperature of the hydrogen atmosphere. In the temperature rising process, the heating temperature is not particularly limited as long as the generation of the hydrogen atoms can be promoted.
- the hydrogen atmosphere has a temperature ranging from 20 degrees Celsius to 200 degrees Celsius.
- the temperature of the hydrogen atmosphere is 150 degrees Celsius.
- the insertion or extraction of particles is achieved by a method of hydrogenating a metal catalyst.
- the first material 110 and the second secondary material 120 are subjected to hydrogenation of a metal catalyst to effect insertion or extraction of hydrogen atoms in the first material 110.
- Insertion or extraction of hydrogen atoms in the first material 110 changes the lattice constant of the first material 110.
- the regulation of the stress level of the second material 120 is achieved by the contact interface.
- FIG. 5 is a schematic diagram of inserting or extracting particles by using an ozone annealing method in a stress control method according to an embodiment of the present application.
- a first material 110 and a second material 120 are deposited on the substrate 140 in FIG.
- the S30 includes: S305, providing an oxygen-containing reactive gas.
- the oxygen-containing reaction gas is ozone, which is very unstable and capable of decomposing into oxygen molecules and oxygen atoms.
- the decomposed oxygen atoms are inserted into the first material 110 by diffusion.
- the oxygen-containing reaction gas can also be other gases capable of providing oxygen atoms, or other mixed gases.
- oxygen atoms are inserted or extracted in the first material 110 by an annealing process.
- the S307 includes: S307a, in the oxygen-containing reaction gas, heating the first material 110 and the second material 120 to a first temperature.
- the oxygen-containing reaction gas generates an oxygen atom.
- the oxygen atoms are diffused into the first material 110.
- the first material 110 and the second material 120 are heated to increase the diffusion of oxygen atoms in the first material 110.
- the oxygen atoms are diffused into the first material 110 to change the lattice constant of the first material 110.
- the first temperature is between 200 degrees Celsius and 400 degrees Celsius.
- the first temperature is 300 degrees Celsius.
- the first material 110 and the second material 120 are maintained at 200 degrees Celsius to 400 degrees Celsius for 15 minutes to 60 minutes.
- the first time is from 15 minutes to 60 minutes. Preferably, the first time is 30 minutes bell.
- the first time is maintained to enable oxygen atoms to sufficiently enter the first material 110.
- the lattice constant of the first material 110 can change the composition, and the stress of the second material 120 can be sufficiently regulated.
- the insertion or extraction of oxygen atoms is achieved by an ozone annealing method.
- the first material 110 and the second material 120 are placed in an oxygen-containing reaction gas.
- the oxygen-containing reaction gas provides an oxygen atom.
- Oxygen atoms diffuse into the first material 110, causing a change in the lattice constant of the first material 110.
- the regulation of the stress level of the second material 120 is achieved by the contact interface.
- Example 1 This example provides an example of SrCoO 2.5 -CoFe 2 O 4 . Wherein, SrCoO 2.5 is the first material 110, and CoFe 2 O 4 is the second material 120. The following describes the magnitude of the stress 2.5 -CoFe 2 O 4 changes of the sample under the SrCoO SrCoO 2.5 -CoFe 2 O 4 Structural Characterization stress-control method of the present application and samples.
- FIG. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample before and after annealing in ozone.
- the lower curve in Fig. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample before annealing.
- the upper curve in Fig. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample after ozone annealing.
- No. triangular peaks are indicated characteristic peaks SrCoO 2.5, dot marked peaks are characteristic peaks CoFe 2 O 4, asterisks substrate 140 peaks.
- the out-of-plane lattice constant of the first material 110SrCoO 2.5 is calculated to be reduced by 3.53%. That is, the first material 110SrCoO 2.5 provides a crush stress of 3.53%. It can also be seen in Fig. 7 that the peak position of the second material 120CoFe 2 O 4 is shifted to the right, and the lattice constant of the second material 120CoFe 2 O 4 is calculated to be 0.97%. It can be seen that the stress control method provided by the present application can apply a compressive stress of 3.53% to the second material, thereby changing the lattice constant of the second material.
- FIG. 8 is an X-ray diffraction spectrum of the SrCoO 2.5 -CoFe 2 O 4 sample before and after hydrogenation of the metal catalyst 201.
- the peak indicated by the solid triangle is a characteristic peak of SrCoO 2.5 .
- the dots indicate the peak of CoFe 2 O 4 .
- the asterisk is the peak of the substrate 140.
- the hollow triangle number indicates SrCoO 2.5 H.
- a curve below is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample grown by the exchange method.
- FIG. 8 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample after hydrogen ion insertion by a method of hydrogenation of a metal catalyst. It can be seen from the two curves varying in Fig. 8 that the overall structure of the SrCoO 2.5 -CoFe 2 O 4 sample has changed. The change in the overall structure is mainly reflected in the change of the lattice constant in the out-of-plane direction. In order to clearly recognize the change in the overall structure of the SrCoO 2.5 -CoFe 2 O 4 sample, part of the line in Fig. 8 was enlarged.
- Figure 9 is a magnified line of the SrCoO 2.5 -CoFe 2 O 4 sample at 40 ° - 50 ° in Figure 8. It is clear in Fig. 9 that the peak variation of SrCoO 2.5 can be seen, so that the out-of-plane lattice constant of the first material 110SrCoO 2.5 is calculated to increase by 6.22%. That is, the first material 110SrCoO 2.5 provides a tensile stress of 6.22%. The peak position of the second material 120CoFe 2 O 4 is shifted to the left, and the lattice constant of the second material 120CoFe 2 O 4 is calculated to be increased by 0.40%. It can be seen that the stress control method provided by the present application can apply a 6.22% tensile stress to the second material 120, thereby changing the lattice constant of the second material 120.
- Example 2 This example provides an example of a NiFe 2 O 4 -SrCoO 2.5 sample. Wherein, SrCoO 2.5 is the first material 110, and NiFe 2 O 4 is the second material 120. The following describes the structural characterization of stress changes in the size of the NiFe 2 O 4 -SrCoO 2.5 sample and the method of the present application is the stress regulation of NiFe 2 O 4 -SrCoO 2.5 Sample conditions:
- the NiFe 2 O 4 -SrCoO 2.5 sample has a 1-3 configuration.
- the growth ratio of SrCoO 2.5 to the NiFe 2 O 4 was 4:1.
- Figure 10 is a representation of the surface topography of the NiFe 2 O 4 -SrCoO 2.5 sample.
- the light and dark in Fig. 10 indicates the height of the surface of the sample, which is high in brightness and low in dark.
- the bright portion in Fig. 10 and formed into a rectangle is NiFe 2 O 4 .
- the dark and flat place in Figure 10 is SrCoO 2.5 .
- Figure 11 is an X-ray diffraction pattern of the NiFe 2 O 4 -SrCoO 2.5 sample. It can be seen in Fig. 11 that the peak indicated by the rice character is the peak of the substrate 140SrTiO 3 (002). The number of substrate 140 left triangular peaks are marked 110SrCoO 2.5 peak of the first material. The peak marked with a circle is the peak of the second material 120NiFe 2 O 4 .
- FIG. 12 is a graph showing the structural change of the NiFe 2 O 4 -SrCoO 2.5 sample by in-situ X-ray diffraction.
- the ionic liquid 202 regulates the insertion of hydrogen ions and extracts oxygen ions.
- the NiFe 2 O 4 -SrCoO 2.5 sample NiFe 2 O 4 with the lattice constant of the outer surface of the sample increases SrCoO 2.5.
- the positive voltage i.e., the ionic liquid 202
- the positive voltage is at a high potential and the first material 110 is at a low potential. Hydrogen ions are inserted into the first material 110 and oxygen ions are extracted, thereby increasing the out-of-plane lattice constant of the first material 110. At this time, the first material 110 applies a tensile stress to the second material 120.
- the ionic liquid 202 regulates the extraction of hydrogen ions and inserts oxygen ions.
- the negative voltage i.e., the ionic liquid 202
- the first material 110 is at a high potential.
- Oxygen ions are inserted into the first material 110 and hydrogen ions are extracted, thereby reducing the out-of-plane lattice constant of the first material 110 and applying a compressive stress to the second material 120.
- the out-of-plane lattice constants of the first material 110 and the second material 120 can all return to the original when a positive voltage is applied. It shows that the stress control process can be repeated.
- the X-ray diffraction peak position of the first material 110SrCoO 2.5 is changed from the initial 46.2° to 44.2° and then to 47.8°.
- the lattice constant of the first material 110SrCoO 2.5 was stretched by 3.1% from the initial state and then by 4.3% with respect to the initial state.
- the first material 110 when the ionic liquid 202 is applied with a positive voltage, applies a tensile stress of 3.1% to the second material 120.
- the ionic liquid 202 is applied with a negative voltage, the first material 110 applies a compressive stress of 4.3% to the second material 120.
- the lattice constant of the second material 120 relative to the single crystal material of the second material 120 is increased by 0.42% due to a change in the first material 110.
- the lattice constant of the second material 120 relative to the single crystal material of the second material 120 is reduced by 1.51%. That is, the overall variation of the lattice constant of the second material 120 can reach 1.93%.
- the embodiment of the present application provides a method of stress regulation, and it is not possible to exhaust all of the embodiments herein. It will be understood that the method of changing the lattice constant of one material by the method of inserting or extracting particles to change the stress of the other material is within the scope of the present application.
- the change of the lattice constant of the material is extremely important and the change of the root source. The change will significantly affect the structure and properties of the material, and also bring about various changes in the electronic structure and the coordination environment.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Catalysts (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The present application relates to a stress control method, comprising: providing a first material (110), wherein a chemical formula of the first material (110) is ABOxHy, wherein A represents one or more of alkaline earth metal elements and rare earth metal elements, B represents one or more of transitional metal elements, x ranges from 1 to 3, and y ranges from 0 to 3; providing a second material (120), wherein the second material (120) and the first material (110) are in contact with each other and form a contact interface; performing insertion or extraction of ions or atoms on the first material (110) to change a lattice constant of the first material (110); and effectively controlling stress of the second material (120) by means of the contact interface. The stress control method can apply greater lasting stress to the second material (120).
Description
相关申请Related application
本申请要求2017年3月6日申请的,申请号为2017101280200,名称为“应力调控方法”的中国专利申请的优先权,在此将其全文引入作为参考。The present application claims the benefit of priority to the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the present disclosure.
本申请涉及材料技术领域,特别是涉及一种应力调控方法。The present application relates to the field of material technology, and in particular to a stress control method.
应力是物体由于外因(受力、湿度、温度场变化等)而变形时,在物体内各部分之间产生相互作用的内力。应力调控即改变物体的应力大小,可以施加应力,也可以释放应力。在应力调控下物质的内部结构会发生变化,同时物质的一系列物理性质(例如电磁性质、输运性质、介电性质等)也会随之变化。Stress is an internal force that creates an interaction between parts of an object when it is deformed by external factors (force, humidity, temperature field changes, etc.). Stress regulation changes the stress of an object, and it can apply stress or release stress. The internal structure of a substance changes under stress control, and a series of physical properties of the substance (such as electromagnetic properties, transport properties, dielectric properties, etc.) also change.
传统的施加整体应力的方法是用金刚石对顶针通过压力传输介质给样品腔内的样品施加压力。采用金刚石对顶针的方法施加的应力可以达到百Gpa量级。传统的施加双轴应力的方法是用0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3(PMN-PT)作为衬底,在衬底PMN-PT上沉积薄膜材料。由于衬底PMN-PT在外加电场下会发生形变,从而给上方的薄膜提供双轴应力。PMN-PT在外加电场强度为10kV/cm时,面内方向应力可达0.63%左右。传统的施加单轴应力的方法是用ZnO2活塞对顶样品。采用ZnO2活塞对顶样品的方法可实现的应力达到百MPa量级。按照1Gpa近似可以等效1%应力,传统的施加单轴应力的方法可实现的应力调控不超过1%。由此可见,传统方案中单轴和双轴施加应力的方法均不能够施加较大的应力。此外,上述所有施加应力的方法一旦撤去,样品又会恢复到最初始没有应力的状态,应力态无法得到有效保持。A conventional method of applying integral stress is to apply pressure to a sample in a sample chamber through a pressure transmitting medium using a diamond to thimble. The stress applied by the method of diamond to thimble can reach the order of 100 Gpa. A conventional method of applying biaxial stress is to deposit a film material on a substrate PMN-PT using 0.67 Pb (Mg 1/3 Nb 2/3 )O 3 -0.33 PbTiO 3 (PMN-PT) as a substrate. The substrate PMN-PT deforms under an applied electric field, thereby providing biaxial stress to the upper film. When the applied electric field strength of PMN-PT is 10kV/cm, the in-plane stress can reach 0.63%. The traditional method of applying uniaxial stress is to use a ZnO 2 piston to the top sample. The stress that can be achieved by the method of using the ZnO 2 piston to the top sample reaches the order of 100 MPa. According to the 1Gpa approximation, the 1% stress can be equivalent, and the traditional method of applying uniaxial stress can achieve stress regulation of no more than 1%. It can be seen that the uniaxial and biaxial stress-applying methods in the conventional scheme cannot apply large stresses. In addition, once all of the above methods of applying stress are removed, the sample is restored to the state where it is initially unstressed, and the stress state cannot be effectively maintained.
发明内容
Summary of the invention
基于此,有必要针对单轴和双轴施加应力的方法不能够施加较大的应力,以及所有传统的施加应力的方法一旦撤去不能使样品保持在应力态的缺陷,提供一种应力调控方法。Based on this, it is necessary to apply a large stress to the uniaxial and biaxial stress-applying methods, and all conventional stress-applying methods provide a stress-regulating method once the defects that cannot maintain the sample in the stress state are removed.
一种应力调控方法,包括:S10,提供结构式为ABOxHy的第一材料,其中,A为碱土金属元素和稀土金属元素中的一种或多种,B为过渡族金属元素的一种或多种,x的取值范围为1-3,y的取值范围为0-3;A stress control method comprising: S10, providing a first material having a structural formula of ABO x H y , wherein A is one or more of an alkaline earth metal element and a rare earth metal element, and B is a transition metal element Or multiple, x ranges from 1-3, and y ranges from 0 to 3;
S20,提供第二材料,使所述第一材料与所述第二材料接触并在所述第一材料和第二材料之间形成接触界面;S20, providing a second material, contacting the first material with the second material and forming a contact interface between the first material and the second material;
S30,将粒子插入或抽出所述第一材料,改变所述第一材料的晶格常数,实现对所述第二材料的应力调控,所述粒子包括离子、原子中的一种或多种。S30, inserting or extracting particles into the first material, changing a lattice constant of the first material, and realizing stress regulation on the second material, the particles including one or more of ions and atoms.
在一个实施例中,所述离子包括氢离子、锂离子、钠离子、钾离子、铷离子、铍离子、镁离子、钙离子、锶离子、钡离子、氮离子、磷离子、氧离子、硫离子、硒离子和氟离子中的一种或多种;In one embodiment, the ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur. One or more of ions, selenium ions, and fluoride ions;
所述原子包括氢原子、锂原子、钠原子、钾原子、铷原子、铍原子、镁原子、钙原子、锶原子、钡原子、氮原子、磷原子、氧原子、硫原子、硒原子和氟原子中的一种或多种。The atom includes a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine. One or more of the atoms.
在一个实施例中,所述第二材料包括金属单质、金属氧化物、合金中的一种或几种。In one embodiment, the second material comprises one or more of a metal element, a metal oxide, an alloy.
在一个实施例中,所述第二材料包括纳米材料,所述纳米材料包括零维的团簇、人造原子、纳米微粒;一维的纳米线、纳米管、纳米棒、纳米纤维;二维的纳米带、超薄膜、多层膜。In one embodiment, the second material comprises a nano material comprising zero-dimensional clusters, artificial atoms, nanoparticles; one-dimensional nanowires, nanotubes, nanorods, nanofibers; two-dimensional Nanobelts, ultrathin films, multilayer films.
在一个实施例中,所述第二材料包括有机功能材料,所述有机功能材料包括具有力学功能的有机材料、具有化学功能的有机材料、具有物理化学功能的有机材料、具有生物化学功能的有机材料、具有电学功能的有机材料。In one embodiment, the second material comprises an organic functional material including an organic material having mechanical functions, an organic material having chemical functions, an organic material having physicochemical functions, and an organic having biochemical functions. Materials, organic materials with electrical functions.
在一个实施例中,所述S30包括:In one embodiment, the S30 includes:
S301,提供离子液体,所述离子液体中包含氢离子和氧离子,将所述第一材料与所述第二材料设置于所述离子液体中;S301, providing an ionic liquid, wherein the ionic liquid contains hydrogen ions and oxygen ions, and the first material and the second material are disposed in the ionic liquid;
S303,给所述离子液体施加电场,从而使得所述离子液体中的氢离子或氧离子插入所述第一材料,或者使得氢离子或氧离子从所述第一材料中抽出。
S303, applying an electric field to the ionic liquid such that hydrogen ions or oxygen ions in the ionic liquid are inserted into the first material, or hydrogen ions or oxygen ions are extracted from the first material.
在一个实施例中,所述S303中,将所述离子液体处于高电势,所述第一材料处于低电势,使离子液体中的氢离子插入所述第一材料或氧离子从所述第一材料中抽出,使得所述第一材料的面外晶格常数增大,从而对所述第二材料施加拉伸应力,实现对所述第二材料的应力调控。In one embodiment, in S303, the ionic liquid is at a high potential, the first material is at a low potential, and hydrogen ions in the ionic liquid are inserted into the first material or oxygen ions from the first The material is extracted such that the out-of-plane lattice constant of the first material is increased to apply a tensile stress to the second material to effect stress regulation of the second material.
在一个实施例中,所述S303中,将所述离子液体处于低电势,所述第一材料处于高电势,使离子液体中的氧离子插入所述第一材料或氢离子从所述第一材料中抽出,使得所述第一材料的面外晶格常数减小,从而对所述第二材料施加挤压应力,实现对所述第二材料的应力调控。In one embodiment, in S303, the ionic liquid is at a low potential, the first material is at a high potential, and oxygen ions in the ionic liquid are inserted into the first material or hydrogen ions from the first The material is extracted such that the out-of-plane lattice constant of the first material is reduced, thereby applying a compressive stress to the second material to effect stress regulation of the second material.
在一个实施例中,所述S30包括:In one embodiment, the S30 includes:
S302,提供金属催化剂和含氢反应气体;S302, providing a metal catalyst and a hydrogen-containing reaction gas;
S304,加热升温至20摄氏度至200摄氏度,使所述含氢反应气体在所述金属催化剂的作用下产生氢原子,所述氢原子扩散插入所述第一材料中以使所述第一材料的晶格常数发生变化。S304, heating and heating to 20 degrees Celsius to 200 degrees Celsius, causing the hydrogen-containing reaction gas to generate hydrogen atoms under the action of the metal catalyst, the hydrogen atoms being diffused into the first material to make the first material The lattice constant changes.
在一个实施例中,所述S30包括:In one embodiment, the S30 includes:
S305,提供含氧反应气体;S305, providing an oxygen-containing reaction gas;
S307,将所述第一材料和所述第二材料加热升温至200摄氏度至400摄氏度,使所述的第一材料被含氧反应气体氧化,氧以氧原子的形式扩散插入所述第一材料中以使所述第一材料的晶格常数发生变化。S307, heating the first material and the second material to a temperature of 200 degrees Celsius to 400 degrees Celsius, wherein the first material is oxidized by an oxygen-containing reaction gas, and oxygen is diffused into the first material in the form of oxygen atoms. Medium to change the lattice constant of the first material.
本申请提供的应力调控方法,提供第一材料和第二材料。所述第一材料的结构式为ABOxHy。其中,A为碱土金属元素和稀土金属元素中的一种或多种。B为过渡族金属元素的一种或多种。x的取值范围为1-3,y的取值范围为0-3。使所述第一材料与所述第二材料接触。并在所述第一材料和第二材料之间形成接触界面。通过粒子的插入或抽出改变所述第一材料的晶格常数。通过所述第一材料晶格常数的改变实现对所述第二材料的应力调控。本申请提供的应力调控方法,所述第一材料通过所述接触界面能够对所述第二材料施加持久并且较大的应力。
The stress control method provided by the present application provides a first material and a second material. The structural formula of the first material is ABO x H y . Wherein A is one or more of an alkaline earth metal element and a rare earth metal element. B is one or more of transition metal elements. The value of x ranges from 1-3, and the range of y ranges from 0 to 3. The first material is contacted with the second material. And forming a contact interface between the first material and the second material. The lattice constant of the first material is changed by the insertion or extraction of particles. Stress regulation of the second material is achieved by a change in the lattice constant of the first material. The stress control method provided by the present application, the first material can apply a permanent and large stress to the second material through the contact interface.
图1为本申请一个实施例提供的应力调控方法的流程图;1 is a flow chart of a stress control method according to an embodiment of the present application;
图2a为本申请一个实施例提供的应力调控方法中对具有2-2型结构的第一材料和第二材料的结构示意图;2a is a schematic structural view of a first material and a second material having a 2-2 type structure in a stress control method according to an embodiment of the present application;
图2b为本申请一个实施例提供的应力调控方法中对具有0-0型结构的第一材料和第二材料的结构示意图;2b is a schematic structural view of a first material and a second material having a 0-0 type structure in a stress control method according to an embodiment of the present application;
图2c为本申请一个实施例提供的应力调控方法中对具有1-3型结构的第一材料和第二材料的结构示意图;2c is a schematic structural view of a first material and a second material having a 1-3 type structure in a stress control method according to an embodiment of the present application;
图2d为本申请一个实施例提供的应力调控方法中对具有0-3型结构的第一材料和第二材料的结构示意图;2d is a schematic structural view of a first material and a second material having a 0-3 type structure in a stress control method according to an embodiment of the present application;
图3为本申请一个实施例提供的应力调控方法中采用离子液体加电场的方法实现粒子的插入或抽出的工艺示意图;3 is a schematic diagram of a process for inserting or extracting particles by using an ionic liquid plus electric field method in a stress control method according to an embodiment of the present application;
图4为本申请一个实施例提供的应力调控方法中采用金属催化剂加氢的方法实现粒子的插入或抽出的工艺示意图;4 is a schematic view showing a process of inserting or extracting particles by using a method of hydrogenating a metal catalyst in a stress control method according to an embodiment of the present application;
图5为本申请一个实施例提供的应力调控方法中采用臭氧退火的方法实现粒子的插入或抽出的工艺示意图;5 is a schematic diagram of a process for inserting or extracting particles by using an ozone annealing method in a stress control method according to an embodiment of the present application;
图6为本申请另一个实施例提供的第一材料在应力调控前后的X射线衍射图;6 is an X-ray diffraction diagram of a first material before and after stress control according to another embodiment of the present application;
图7为本申请另一个实施例提供的第一材料在应力调控前后的X射线衍射图的部分放大图;7 is a partial enlarged view of an X-ray diffraction pattern of a first material before and after stress control according to another embodiment of the present application;
图8为本申请另一个实施例提供的第一材料在应力调控前后的X射线衍射图;8 is an X-ray diffraction diagram of a first material before and after stress control according to another embodiment of the present application;
图9为本申请另一个实施例提供的第一材料在应力调控前后的X射线衍射图的部分放大图;9 is a partial enlarged view of an X-ray diffraction pattern of a first material before and after stress control according to another embodiment of the present application;
图10为本申请再一个实施例提供的第一材料和第二材料的表面形貌图;10 is a topographical view of a first material and a second material provided by another embodiment of the present application;
图11为本申请再一个实施例提供的第一材料和第二材料的X射线衍射图;Figure 11 is an X-ray diffraction diagram of a first material and a second material provided in still another embodiment of the present application;
图12为本申请再一个实施例提供的第一材料和第二材料应力调控过程中的原位X射线衍射图。
12 is an in-situ X-ray diffraction pattern of a first material and a second material stress regulation process according to still another embodiment of the present application.
为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例对本申请的应力调控方法进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。In order to make the objects, technical solutions and advantages of the present application more clear, the stress control method of the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the application and are not intended to be limiting.
请参阅图1,本申请提供的一种应力调控方法,包括:Referring to FIG. 1 , a stress control method provided by the present application includes:
S10,提供结构式为ABOxHy的第一材料110。其中,A为碱土金属元素和稀土金属元素中的一种或多种。B为过渡族金属元素的一种或多种。x的取值范围为1-3,y的取值范围为0-3。S10, providing a first material 110 of the formula ABO x H y . Wherein A is one or more of an alkaline earth metal element and a rare earth metal element. B is one or more of transition metal elements. The value of x ranges from 1-3, and the range of y ranges from 0 to 3.
所述ABOxHy中,A为碱土金属元素和稀土金属元素中的一种或多种。B为过渡族金属元素的一种或多种。x的取值范围为1-3,y的取值范围为0-3。在一个实施例中,所述x的取值范围为1-3,所述y的取值范围大于0小于等于3。具体的,A与B在ABOxHy中的比例不一定是严格的1:1。所述A与所述B的比例,可以因为在ABOxHy中存在空位和填隙原子等而产生偏离。因此,可以理解,所有的A与B的比例接近1:1的所述ABOxHy均在本申请保护范围之内。所述碱土金属可以包括Be、Mg、Ca、Sr、Ba中的一种或多种。所述稀土金属元素可以包括La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb中的一种或多种。所述过渡族元素可以包括Co、Cr、Fe、Mn、Ni、Cu、Ti、Zn、Sc和V中的一种或多种。可以理解,A还可以是碱土金属与稀土金属的混合。B还可以是过渡金属和主族金属的混合。在一个实施例中,所述第一材料110可以为所述结构式为ABOxHy的含氢过渡金属氧化物。In the ABO x H y , A is one or more of an alkaline earth metal element and a rare earth metal element. B is one or more of transition metal elements. The value of x ranges from 1-3, and the range of y ranges from 0 to 3. In one embodiment, the value of x ranges from 1-3, and the range of y ranges from greater than 0 to less than or equal to 3. Specifically, the ratio of A and B in ABO x H y is not necessarily strictly 1:1. The ratio of the A and B, which because of vacancy and interstitial atom and the like in the ABO x H y departing generated. Therefore, it can be understood that all of the ABO x H y whose ratio of A to B is close to 1:1 are within the scope of the present application. The alkaline earth metal may include one or more of Be, Mg, Ca, Sr, Ba. The rare earth metal element may include one or more of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. The transition group element may include one or more of Co, Cr, Fe, Mn, Ni, Cu, Ti, Zn, Sc, and V. It can be understood that A can also be a mixture of an alkaline earth metal and a rare earth metal. B may also be a mixture of a transition metal and a main group metal. In one embodiment, the first material 110 may be a hydrogen-containing transition metal oxide of the formula ABO x H y .
S20,提供第二材料120,使所述第一材料110与所述第二材料120接触。并在所述第一材料110和第二材料120之间形成接触界面。S20, providing a second material 120, contacting the first material 110 with the second material 120. And forming a contact interface between the first material 110 and the second material 120.
所述接触界面即所述第一材料110和所述第二材料120的接触面。具体的,所述接触界面的大小、形状并不具体限定。所述接触界面可以是规则形状,也可以是不规则形状。所述接触界面的形状可以根据所述第一材料110和所述第二材料120组成的不同构型来确定。比如,所述第一材料110和所述第二材料120层状交替分布,则所述接触界面为两种材料互相接触的交界。在所述接触界面处的所述第一材料110和所述第二材料120的原子紧紧连接在
一起。当所述第一材料110的晶格常数变化,所述接触界面处的原子排列会发生变化。所述第二材料120的原子排列也会随之变化。从而对所述第二材料120施加了应力。通过所述接触界面,所述第一材料110可以通过粒子的插入或者抽出来调控所述第二材料120受到的应力大小。The contact interface is a contact surface of the first material 110 and the second material 120. Specifically, the size and shape of the contact interface are not specifically limited. The contact interface may be a regular shape or an irregular shape. The shape of the contact interface may be determined according to different configurations of the first material 110 and the second material 120. For example, the first material 110 and the second material 120 are alternately layered, and the contact interface is a boundary where the two materials contact each other. The atoms of the first material 110 and the second material 120 at the contact interface are tightly connected at
together. When the lattice constant of the first material 110 changes, the arrangement of atoms at the contact interface changes. The atomic arrangement of the second material 120 also varies. Thereby a stress is applied to the second material 120. Through the contact interface, the first material 110 can regulate the magnitude of the stress received by the second material 120 by inserting or extracting particles.
S30,将粒子插入所述第一材料110改变所述第一材料110的晶格常数,实现对所述第二材料120的应力调控。所述粒子包括离子、原子中的一种或多种。S30, inserting particles into the first material 110 to change a lattice constant of the first material 110 to achieve stress regulation on the second material 120. The particles include one or more of ions and atoms.
将粒子插入所述第一材料110,插入可以理解为和所述第一材料110结合形成一个新的结构。形成的所述新的结构的晶格常数会区别于所述第一材料110的晶格常数。所述粒子包括离子、原子中的一种或多种。既可以实现一种或多种粒子的插入或抽出,也可以实现一种或多种离子的插入或抽出,还可以实现一种或多种原子的插入或抽出。Inserting particles into the first material 110, insertion can be understood as combining with the first material 110 to form a new structure. The lattice constant of the new structure formed is different from the lattice constant of the first material 110. The particles include one or more of ions and atoms. Insertion or extraction of one or more particles, insertion or extraction of one or more ions, and insertion or extraction of one or more atoms can also be achieved.
粒子的插入或者抽出的方法有:离子液体加电场的方法、不同气体氛围催化的方法、不同气体氛围退火的方法或电解质插入的方法。上述一系列提供粒子的插入或者抽出的方法只是举例,具体的提供离子或者原子的方法并不限定,只要能实现粒子的插入或者抽出就可以。The methods of inserting or extracting particles include: an ionic liquid plus electric field method, a different gas atmosphere catalysis method, a different gas atmosphere annealing method, or an electrolyte insertion method. The above series of methods for providing insertion or extraction of particles are merely examples, and the specific method of providing ions or atoms is not limited as long as the insertion or extraction of particles can be achieved.
本实施例中的应力调控方法,通过改变所述第一材料110的晶格常数调控所述第二材料120的应力大小。所述第一材料110的晶格常数可以通过粒子的插入或者抽出而实现有效的调节。所述第一材料110的晶格常数改变以后,通过界面的耦合效应进而改变所述第二材料120的晶格常数。实现对于所述第二材料120的应力大小的有效调控。本申请提供的应力调控方法,所述第一材料110通过所述接触界面能够对所述第二材料120施加持久的应力。所述第一材料110的晶格常数改变,可以为所述第二材料120施加应力。所述第一材料110的晶格常数改变会使所述第二材料120的晶格常数也发生改变。所述第二材料120晶格常数的改变也带来了所述第二材料120应力状态的改变。并且采用本申请提供的应力调控方法比传统的方法施加的应力更大。具体的,采用本申请提供的应力调控方法施加的拉伸应力可达到6%,甚至更高,以及采用本申请提供的应力调控方法施加的挤压应力可达3.5%,甚至更高。In the stress control method in this embodiment, the stress of the second material 120 is adjusted by changing the lattice constant of the first material 110. The lattice constant of the first material 110 can be effectively adjusted by the insertion or extraction of particles. After the lattice constant of the first material 110 is changed, the lattice constant of the second material 120 is further changed by the coupling effect of the interface. Effective regulation of the magnitude of the stress of the second material 120 is achieved. In the stress control method provided by the present application, the first material 110 can apply a permanent stress to the second material 120 through the contact interface. The lattice constant of the first material 110 is changed, and stress may be applied to the second material 120. The change in the lattice constant of the first material 110 also causes a change in the lattice constant of the second material 120. The change in the lattice constant of the second material 120 also brings about a change in the stress state of the second material 120. And the stress control method provided by the present application is more stress applied than the conventional method. Specifically, the tensile stress applied by the stress control method provided by the present application can reach 6% or even higher, and the compressive stress applied by the stress control method provided by the present application can be 3.5% or even higher.
在一个实施例中,所述离子包括氢离子、锂离子、钠离子、钾离子、铷离子、铍离子、镁离子、钙离子、锶离子、钡离子、氮离子、磷离子、氧离子、硫离子、硒离子和氟离子中的一种或多种;
In one embodiment, the ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen ions, phosphorus ions, oxygen ions, sulfur. One or more of ions, selenium ions, and fluoride ions;
所述原子包括氢原子、锂原子、钠原子、钾原子、铷原子、铍原子、镁原子、钙原子、锶原子、钡原子、氮原子、磷原子、氧原子、硫原子、硒原子和氟原子中的一种或多种。The atom includes a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine. One or more of the atoms.
本实施例中,所述粒子的插入或抽出可以采用电解质插入法实现。如锂离子、钠离子、钾离子、铷离子、铍离子、镁离子、钙离子、锶离子、钡离子等带正电的阳离子的插入或抽出,可以先在含有上述阳离子的电解质中设置电极。所述电解质中设置有待插入或抽出粒子的样品。然后,通过对所述电极施加高于样品的电势,向所述样品中插入上述阳离子。或者,还可以对电极施加低于样品的电势,从而从所述样品中抽出上述阳离子。所述样品由所述第一材料110和所述第二材料120组成,所述第一材料110和所述第二材料120接触并在所述第一材料110和第二材料120之间形成接触界面。上述的阳离子插入或抽出改变所述第一材料110的晶格常数。通过所述第一材料110对所述第二材料120施加不同程度的应力。比如:可以设置阳离子导体电解质,Na-β-Al2O3。所述Na-β-Al2O3实质是NaAl11O17,所述电解质NaAl11O17可以产生钠离子,钠离子可以在其中移动,并在外加电场的驱动下插入到所述第一材料110,或从所述第一材料110中抽出。In this embodiment, the insertion or extraction of the particles can be achieved by an electrolyte insertion method. For the insertion or extraction of a positively charged cation such as a lithium ion, a sodium ion, a potassium ion, a cesium ion, a strontium ion, a magnesium ion, a calcium ion, a strontium ion or a strontium ion, an electrode may be provided in the electrolyte containing the cation described above. A sample to be inserted or withdrawn from the particles is disposed in the electrolyte. Then, the above cation is inserted into the sample by applying a potential higher than the sample to the electrode. Alternatively, it is also possible to apply a potential lower than the sample to the electrode to extract the above cation from the sample. The sample is composed of the first material 110 and the second material 120, the first material 110 and the second material 120 are in contact and form a contact between the first material 110 and the second material 120 interface. The above cation insertion or extraction changes the lattice constant of the first material 110. Different degrees of stress are applied to the second material 120 by the first material 110. For example, a cationic conductor electrolyte, Na-β-Al 2 O 3 , can be provided. The Na-β-Al 2 O 3 is substantially NaAl 11 O 17 , and the electrolyte NaAl 11 O 17 can generate sodium ions, in which sodium ions can move, and is inserted into the first material under the drive of an applied electric field. 110, or extracted from the first material 110.
对于氮离子、氟离子、磷离子、硫离子、硒离子等带负电的阴离子,可以采用在含有上述阴离子的电解质中通过在对电极上施加低于样品的电势插入上述阴离子。同样地,所述含有上述阴离子的电解质中设置有所述样品。或者对电极上施加高电势抽出上述阴离子。比如:可以设置阴离子导体电解质,氟化铅PbF2。所述电解质氟化铅PbF2可以产生氟离子,氟离子可以在其中自由移动,并在外加电场的驱动下插入所述第一材料110,或从所述第一材料110中抽出。类似的氟离子导体还可以为CaF2,SrF2,BaF2及具有氟铈矿和YF3结构的材料。还可以设置氧离子导体电解质来实现氧离子的插入或抽出,典型的氧离子导体如Zr(Y)O2。For negatively charged anions such as nitrogen ions, fluoride ions, phosphorus ions, sulfur ions, selenium ions, etc., it is possible to insert the above anions by applying a potential lower than the sample on the counter electrode in the electrolyte containing the above anions. Similarly, the sample is provided in the electrolyte containing the above anion. Alternatively, a high potential is applied to the electrode to extract the anion. For example, an anion conductor electrolyte, lead fluoride PbF 2 can be provided. The electrolyte lead fluoride PbF 2 may generate fluorine ions in which fluorine ions may freely move and are inserted into or withdrawn from the first material 110 by an applied electric field. Similar fluoride ion conductors may also be CaF 2 , SrF 2 , BaF 2 and materials having a fluoranthene and YF 3 structure. An oxygen ion conductor electrolyte can also be provided to effect insertion or extraction of oxygen ions, such as Zr(Y)O 2 .
原子的插入和抽出可以类似原理,通过材料提供上述原子,而原子浓度差会产生梯度势从而使原子从高浓度向低浓度扩散。锂原子、钠原子、钾原子、铷原子、铍原子、镁原子、钙原子、锶原子、钡原子、氮原子、磷原子、硫原子、硒原子可以采用与前述类似的方法进行插入或抽出。扩散进入所述第一材料110中的原子在所述第一材料110中可以是游离的形态,也可以与所述第一材料110发生反应成键。比如,氟原子的插入或抽出还可以通过含氟有机物或含氟的纳米材料实现。具体可以通过偏二氟乙烯(PVDF)溶液旋涂到所述第一材料
110表面,进一步对所述第一材料110做退火处理,促进氟原子向所述第一材料110中扩散,并与第一材料110反应形成氟化物。The insertion and extraction of atoms can be similarly taught by providing the above atoms through the material, and the difference in atomic concentration produces a gradient potential that causes the atoms to diffuse from a high concentration to a low concentration. A lithium atom, a sodium atom, a potassium atom, a ruthenium atom, a ruthenium atom, a magnesium atom, a calcium atom, a ruthenium atom, a ruthenium atom, a nitrogen atom, a phosphorus atom, a sulfur atom, or a selenium atom can be inserted or extracted in a manner similar to the foregoing. The atoms diffused into the first material 110 may be in a free form in the first material 110, and may also react with the first material 110 to form a bond. For example, the insertion or extraction of fluorine atoms can also be achieved by fluorine-containing organic or fluorine-containing nanomaterials. Specifically, it can be spin-coated to the first material by a vinylidene fluoride (PVDF) solution.
The surface of the 110 further anneals the first material 110 to promote diffusion of fluorine atoms into the first material 110 and react with the first material 110 to form fluoride.
可以理解粒子的插入或抽出还可以采用其他的方法。通过改变所述第一材料110的晶格常数来实现应力调控的方法都在本申请的保护范围之内。It can be understood that other methods can be used for inserting or extracting particles. A method of achieving stress regulation by changing the lattice constant of the first material 110 is within the scope of the present application.
在一个实施例中,所述第二材料120包括金属单质、金属氧化物、合金中的一种或几种。In one embodiment, the second material 120 comprises one or more of a metal element, a metal oxide, an alloy.
在一个实施例中,所述第二材料120为金属单质。所述金属单质包括钾、钙、钠、镁、铝、锌、铁、铜、铅、镍中的一种或多种。可以理解,所述金属单质可以为任意的金属单质。In one embodiment, the second material 120 is a simple substance of metal. The metal element includes one or more of potassium, calcium, sodium, magnesium, aluminum, zinc, iron, copper, lead, and nickel. It can be understood that the metal element can be any metal element.
在一个实施例中,所述第二材料120为金属单质。在本实施例中能够通过改变所述第一材料110的晶格常数来有效地改变所述第二材料120的性质。如:通过改变所述第一材料110的晶格常数来对所述金属单质施加拉伸应力或挤压应力。所述金属单质的应力大小改变以后,所述金属单质的延展性、导电性和导热性也会相应的发生改变。In one embodiment, the second material 120 is a simple substance of metal. The properties of the second material 120 can be effectively changed by changing the lattice constant of the first material 110 in this embodiment. For example, a tensile stress or a compressive stress is applied to the metal element by changing the lattice constant of the first material 110. After the stress of the metal element is changed, the ductility, electrical conductivity and thermal conductivity of the metal element are correspondingly changed.
在一个实施例中,所述第二材料120为金属氧化物。所述金属氧化物是氧元素与另外一种金属化学元素组成的二元化合物,如氧化铁(Fe2O3)、氧化镍(NiO)等。所述金属氧化物一个重要的作用是作为催化剂,在不同的反应中起到重要作用。本实施例中,所述第一材料110为所述含氢过渡金属氧化物,所述第二材料120为金属氧化物。通过改变所述第一材料110的晶格常数,对所述金属氧化物施加拉伸应力或挤压应力,从而进一步改变所述金属氧化物的催化性质,提高所述金属氧化物的催化效率。In one embodiment, the second material 120 is a metal oxide. The metal oxide is a binary compound composed of an oxygen element and another metal chemical element such as iron oxide (Fe 2 O 3 ), nickel oxide (NiO), or the like. An important role of the metal oxide is as a catalyst, which plays an important role in different reactions. In this embodiment, the first material 110 is the hydrogen-containing transition metal oxide, and the second material 120 is a metal oxide. A tensile stress or a compressive stress is applied to the metal oxide by changing the lattice constant of the first material 110, thereby further changing the catalytic properties of the metal oxide, and improving the catalytic efficiency of the metal oxide.
在一个实施例中,所述第二材料120为合金。所述合金是由两种或两种以上的金属与金属或非金属经一定方法所合成的具有金属特性的物质。合金可以分为:混合物合金(共熔混合物)、固熔体合金、金属互化物合金。所述混合物合金(共熔混合物)当液态合金凝固时,构成合金的各组分分别结晶而成的合金,如焊锡、铋镉合金等。所述固熔体合金即当液态合金凝固时形成固溶体的合金,如金银合金等。所述金属互化物合金,即各组分相互形成化合物的合金,如铜、锌组成的黄铜(β-黄铜、γ-黄铜和ε-黄铜)。本实施例中,所述第一材料110为所述含氢过渡金属氧化物,所述第二材料120为合金。通过改变所述第一材料110的晶格常数,对所述合金施加拉伸应力或挤压应力,从而进一步改变所述合金的导电性能,导热性能,抗腐蚀性能,提高所述合金的应用价值。
In one embodiment, the second material 120 is an alloy. The alloy is a material having metal characteristics synthesized by a certain method from two or more metals and metals or nonmetals. Alloys can be divided into: mixture alloys (eutectic mixtures), solid solution alloys, and intermetallic compounds. The alloy of the mixture (co-melting mixture) is an alloy formed by crystallizing the components of the alloy when the liquid alloy is solidified, such as solder, cadmium-cadmium alloy or the like. The solid solution alloy is an alloy that forms a solid solution when the liquid alloy solidifies, such as a gold-silver alloy or the like. The intermetallic compound, that is, an alloy in which the components form a compound with each other, such as brass composed of copper or zinc (β-brass, γ-brass, and ε-brass). In this embodiment, the first material 110 is the hydrogen-containing transition metal oxide, and the second material 120 is an alloy. By changing the lattice constant of the first material 110, tensile stress or compressive stress is applied to the alloy, thereby further changing the electrical conductivity, thermal conductivity, corrosion resistance of the alloy, and improving the application value of the alloy. .
在一个实施例中,所述第二材料120包括纳米材料。所述纳米材料即以纳米尺度的物质单元为基础,按一定规律构筑或组装一种新的体系。所述纳米材料可分为块体、薄膜、多层膜、以及纳米结构。所述纳米材料的基本组成单元有零维纳米材料、一维纳米材料、二维纳米材料。零维纳米材料可以为团簇、人造原子、纳米微粒。一维纳米材料可以为纳米线、纳米管、纳米棒、纳米纤维。二维纳米材料可以为纳米带、超薄膜、多层膜。所述纳米结构与所述含氢过渡金属氧化物接触,在界面处的原子间相互作用使得原子紧紧耦合在一起。当所述含氢过渡金属氧化物晶格常数发生变化时,会对所述纳米材料施加拉伸应力或挤压应力。所述纳米材料受到应力调节后,其晶体结构会发生改变。因为纳米材料的一些性质(如能级结构)依赖于材料本身具体的晶格结构和外加应力。所以当改变所述第一材料110的晶格常数时,所述第二材料120的晶格常数也会改变。所述第二材料120的晶格常数改变了,将影响所述第二材料120的能级结构,使所述第二材料120表现出更优越的性能。例如高的非线性光学效应,光吸收、光反射和光输运性能,特异的催化性、强氧化性和还原性等。所述纳米材料可以包括石墨烯和碳纳米管。In one embodiment, the second material 120 comprises a nanomaterial. The nanomaterial is based on a nanoscale material unit, and a new system is constructed or assembled according to a certain rule. The nanomaterials can be divided into blocks, films, multilayer films, and nanostructures. The basic constituent units of the nano material are zero-dimensional nano materials, one-dimensional nano materials, and two-dimensional nano materials. Zero-dimensional nanomaterials can be clusters, artificial atoms, and nanoparticles. One-dimensional nanomaterials can be nanowires, nanotubes, nanorods, and nanofibers. The two-dimensional nano material can be a nanobelt, an ultrathin film, or a multilayer film. The nanostructures are in contact with the hydrogen-containing transition metal oxide, and the interatomic interactions at the interface cause the atoms to be tightly coupled together. When the lattice constant of the hydrogen-containing transition metal oxide changes, tensile stress or compressive stress is applied to the nanomaterial. After the nanomaterial is subjected to stress adjustment, its crystal structure changes. Because some properties of nanomaterials, such as the energy level structure, depend on the specific lattice structure and applied stress of the material itself. Therefore, when the lattice constant of the first material 110 is changed, the lattice constant of the second material 120 also changes. The lattice constant of the second material 120 is changed to affect the energy level structure of the second material 120, so that the second material 120 exhibits superior performance. For example, high nonlinear optical effects, light absorption, light reflection and light transport properties, specific catalytic properties, strong oxidative properties and reducibility. The nanomaterials may include graphene and carbon nanotubes.
在一个实施例中,所述第二材料120包括有机功能材料。所述有机功能材料是指具有独特的物理及化学性质(功能)的有机小分子、超分子及高分子材料。所述有机功能材料的主要功能类型有:力学功能、化学功能、物理化学功能、生物化学功能、电学功能。所述有机功能材料如:液晶材料、激光染料、光致变色材料、光导材料、太阳能电池材料、有机介电材料。所述有机介电材料如聚偏氟乙稀(PVDF),在外加应力下其介电性能会有变化。在一个实施例中,所述第一材料110为所述含氢过渡金属氧化物ABOxHy,所述第二材料120为有机介电材料PVDF。通过改变所述第一材料110的晶格常数,对所述有机介电材料PVDF施加拉伸应力或挤压应力,从而进一步改变所述有机介电材料PVDF的介电性能。In one embodiment, the second material 120 comprises an organic functional material. The organic functional material refers to organic small molecules, supramolecular and polymeric materials having unique physical and chemical properties (functions). The main functional types of the organic functional materials are: mechanical function, chemical function, physical and chemical function, biochemical function, and electrical function. The organic functional materials are: liquid crystal materials, laser dyes, photochromic materials, photoconductive materials, solar cell materials, organic dielectric materials. The organic dielectric material, such as polyvinylidene fluoride (PVDF), has a change in dielectric properties under applied stress. In one embodiment, the first material 110 is the hydrogen-containing transition metal oxide ABO x H y and the second material 120 is an organic dielectric material PVDF. A tensile stress or a compressive stress is applied to the organic dielectric material PVDF by changing a lattice constant of the first material 110, thereby further changing the dielectric properties of the organic dielectric material PVDF.
请参见图2a、图2b、图2c和图2d,上述附图给出了所述第一材料110和所述第二材料120的四种不同构型。采用本申请的调控方法能够实现对上述4种构型中所述第二材料120的应力大小的调控。图中的四种不同构型可以沉积在基底140上或者形成独自支撑结构。Referring to Figures 2a, 2b, 2c and 2d, the above figures show four different configurations of the first material 110 and the second material 120. The regulation of the stress of the second material 120 in the above four configurations can be achieved by the control method of the present application. The four different configurations in the figures can be deposited on the substrate 140 or form an individual support structure.
请参见图2a,在一个实施例中,所述第一材料110和所述第二材料120层状交替分布。所述第一材料110和所述第二材料120层状交替分布时,所述层状的厚度并不限制。可以根
据需要调控的应力大小及均匀程度的要求对其每层的厚度进行设置。Referring to FIG. 2a, in one embodiment, the first material 110 and the second material 120 are alternately layered. When the first material 110 and the second material 120 are alternately layered, the thickness of the layer is not limited. Can root
The thickness of each layer is set according to the size and uniformity of the stress to be regulated.
请参见图2b,在一个实施例中,所述第一材料110呈块状间隔分布。所述第二材料120与所述第一材料110形状相同。所述第二材料120与所述第一材料110在垂直方向上层状交替分布。本实施例中,还可以包括一种第三材料130。所述第三材料130分布于所述第一材料110和所述第二材料120形成的块状阵列中。可以理解所述第一材料110和所述第二材料120在垂直方向上层状交替分布。在垂直方向上是交替的一层一层向上累加的。而在水平方向上间隔分布,即所述第一材料110和所述第二材料120组成了层状阵列。一个所述层状阵列与另一个所述层状阵列之间形成间隙。在所述第一材料110与所述第二材料120形成的所述间隔处分布有第三材料130。具体的,在相邻的所述第一材料110之间以及相邻的所述第二材料120之间分布有第三材料130。通过所述第一材料110晶格常数的改变,可以同时实现对所述第二材料120和所述第三材料130的应力大小的调控。例如:所述第一材料110为所述含氢过渡金属氧化物,所述第二材料120为磁致伸缩材料。通过离子液体加电场的方法改变所述第一材料110的晶格常数,进而实现对所述磁致伸缩材料应力大小的改变。即实现了磁电耦合。此时再选择所述第三材料130为光致伸缩材料锆钛酸铅镧(PLZT)陶瓷。通过改变所述第一材料110的晶格常数,进而实现对所述光致伸缩材料应力大小的改变。即可以实现光、磁、电三种物理性质的调控。Referring to FIG. 2b, in one embodiment, the first materials 110 are distributed in a block-like interval. The second material 120 is the same shape as the first material 110. The second material 120 and the first material 110 are alternately layered in a vertical direction. In this embodiment, a third material 130 may also be included. The third material 130 is distributed in a block array formed by the first material 110 and the second material 120. It can be understood that the first material 110 and the second material 120 are alternately layered in the vertical direction. In the vertical direction, alternating layers are added upwards. And spaced apart in the horizontal direction, that is, the first material 110 and the second material 120 constitute a layered array. A gap is formed between one of the layered arrays and the other of the layered arrays. A third material 130 is distributed at the interval formed by the first material 110 and the second material 120. Specifically, a third material 130 is distributed between the adjacent first materials 110 and between the adjacent second materials 120. The adjustment of the stress magnitude of the second material 120 and the third material 130 can be simultaneously achieved by the change in the lattice constant of the first material 110. For example, the first material 110 is the hydrogen-containing transition metal oxide, and the second material 120 is a magnetostrictive material. The lattice constant of the first material 110 is changed by an ionic liquid plus electric field method, thereby achieving a change in the stress magnitude of the magnetostrictive material. That is, magnetoelectric coupling is achieved. At this time, the third material 130 is selected as a photostrictive material, lead zirconate titanate (PLZT) ceramic. The change in the magnitude of the stress of the photostrictive material is achieved by varying the lattice constant of the first material 110. That is, the regulation of three physical properties of light, magnetism and electricity can be realized.
在一个实施例中,所述第三材料130可选自所述第二材料120的材料,且与所述第二材料120的材料不同。具体的,所述第三材料130可以为金属氧化物中的导电材料,比如SrRuO3。在所述第一材料110与所述第二材料120形成的所述间隔处加入所述导电材料SrRuO3后,再实施离子液体实现离子的插入或抽出。在离子的插入或抽出过程中,使所述第一材料110的晶格常数的改变,从而调控所述第二材料120和所述第三材料SrRuO3的应力大小。In one embodiment, the third material 130 may be selected from the material of the second material 120 and different from the material of the second material 120. Specifically, the third material 130 may be a conductive material in a metal oxide, such as SrRuO 3 . After the conductive material SrRuO 3 is added at the interval formed by the first material 110 and the second material 120, an ionic liquid is further applied to effect insertion or extraction of ions. During the insertion or extraction of ions, the lattice constant of the first material 110 is changed, thereby regulating the stress level of the second material 120 and the third material SrRuO 3 .
在一个实施例中,使所述第一材料110与所述第二材料120之间接触。并形成接触界面的步骤具体为使所述第一材料110与所述第二材料120其中之一被另一材料包裹。在一个实施例中,所述第一材料110和所述第二材料120的其中之一被另一材料包裹。具体地,可以是所述第二材料120将所述第一材料110包裹。也可以是所述第一材料110将所述第二材料120包裹。
In one embodiment, the first material 110 is brought into contact with the second material 120. The step of forming the contact interface is specifically such that one of the first material 110 and the second material 120 is wrapped by another material. In one embodiment, one of the first material 110 and the second material 120 is wrapped by another material. Specifically, the second material 120 may wrap the first material 110. It is also possible that the first material 110 wraps the second material 120.
在一个实施例中,所述第一材料110呈点状、线状、面状或体状分散于所述第二材料120。可以理解,所述第一材料110呈不同的形状分散于所述第二材料120。所述第一材料110的形状和构造并不具体限定。所述第一材料110和所述第二材料120具有接触界面,使所述第二材料120能够依赖所述第一材料110的变化而变化。In one embodiment, the first material 110 is dispersed in the second material 120 in a dot shape, a line shape, a surface shape or a body shape. It can be understood that the first material 110 is dispersed in the second material 120 in different shapes. The shape and configuration of the first material 110 are not specifically limited. The first material 110 and the second material 120 have a contact interface that enables the second material 120 to vary depending on the change of the first material 110.
请参见图2c,在一个实施例中,所述第一材料110形成阵列。所述第二材料120将所述第一材料110包裹,所述阵列包括柱状的所述第一材料110。本实施例中,所述第一材料110为中间的柱状阵列。所述第一材料110为所述含氢过渡金属氧化物。所述第二材料120与所述第一材料110接触。所述第一材料110和所述第二材料120具有接触界面。通过离子的插入或抽出或者原子的插入或抽出改变所述第一材料110的晶格常数。通过所述接触界面实现对所述第二材料120的不同应力大小的调控。Referring to FIG. 2c, in one embodiment, the first materials 110 form an array. The second material 120 wraps the first material 110, and the array includes the first material 110 in a columnar shape. In this embodiment, the first material 110 is an intermediate columnar array. The first material 110 is the hydrogen-containing transition metal oxide. The second material 120 is in contact with the first material 110. The first material 110 and the second material 120 have a contact interface. The lattice constant of the first material 110 is changed by insertion or extraction of ions or insertion or extraction of atoms. The regulation of different stress levels of the second material 120 is achieved by the contact interface.
请参见图2d,在一个实施例中,所述第一材料110形成阵列,所述第二材料120将所述第一材料110包裹。所述阵列包括块状的所述第一材料110。本实施例中,所述第一材料110为中间的块状阵列,所述第一材料110为所述含氢过渡金属氧化物。所述第二材料120与所述第一材料110接触。所述第一材料110和所述第二材料120具有接触界面。本实施例中,所述第一材料110和所述第二材料120的接触界面比较大,相应的应力调控能力会比较强。可以理解,在具体应用过程中,可以根据不同的需求来进一步确定采用四种构型的任意的所述第一材料110和所述第二材料120。Referring to FIG. 2d, in one embodiment, the first material 110 forms an array and the second material 120 wraps the first material 110. The array includes the first material 110 in a block shape. In this embodiment, the first material 110 is an intermediate block array, and the first material 110 is the hydrogen-containing transition metal oxide. The second material 120 is in contact with the first material 110. The first material 110 and the second material 120 have a contact interface. In this embodiment, the contact interface between the first material 110 and the second material 120 is relatively large, and the corresponding stress control capability is relatively strong. It can be understood that, in a specific application process, any of the first material 110 and the second material 120 adopting four configurations may be further determined according to different requirements.
请参阅图3,本申请提供的应力调控方法中采用离子液体加电场的方法实现粒子的插入或抽出的工艺示意图。图3中基底140上沉积有第一材料110和第二材料120。Please refer to FIG. 3 , which is a schematic diagram of a process for inserting or extracting particles by using an ionic liquid plus electric field method in the stress control method provided by the present application. A first material 110 and a second material 120 are deposited on the substrate 140 in FIG.
在一个实施例中,所述S30包括:In one embodiment, the S30 includes:
S301,提供离子液体202。所述离子液体202中包含氢离子和氧离子,将所述第一材料110与所述第二材料120设置于所述离子液体202中。S301, an ionic liquid 202 is provided. The ionic liquid 202 contains hydrogen ions and oxygen ions, and the first material 110 and the second material 120 are disposed in the ionic liquid 202.
所述离子液体202包含氢离子和氧离子。所述离子液体202的类型可以是多种的,只要能够通过水解或者其它途径提供所需氢离子和氧离子即可。所述第一材料110和所述第二材料120可以浸没在所述离子液体202中。这样扩大了所述第一材料110和所述第二材料120与所述离子液体202接触面积。便于所述离子液体202中的离子扩散进入所述第一材料110。
The ionic liquid 202 contains hydrogen ions and oxygen ions. The type of the ionic liquid 202 may be various as long as the desired hydrogen ions and oxygen ions can be supplied by hydrolysis or other means. The first material 110 and the second material 120 may be immersed in the ionic liquid 202. This enlarges the contact area of the first material 110 and the second material 120 with the ionic liquid 202. Ions in the ionic liquid 202 are facilitated to diffuse into the first material 110.
S303,给所述离子液体202施加电场,从而使得所述离子液体202中的氢离子或氧离子插入所述第一材料110,或者使得氢离子或氧离子从所述第一材料110中抽出。S303, an electric field is applied to the ionic liquid 202 such that hydrogen ions or oxygen ions in the ionic liquid 202 are inserted into the first material 110, or hydrogen ions or oxygen ions are extracted from the first material 110.
可以理解,给所述第一材料110施加电场的方法可以有多种。在一个实施例中,可以在所述第一材料110与所述第二材料120的表面形成第一电极210。所述第一电极210的形状不限,可以是平行板电极、棒状电极、金属网电极。通过电场的方向来控制所述离子液体202中的氢离子插入和氧离子抽出所述第一材料110,或者氧离子插入和氢离子抽出所述第一材料110。氢离子和氧离子来源于所述离子液体202中的水。所述离子液体202中,水的含量不限制。实验证实,只要所述离子液体202中具有少量的水(>100ppm)就可以实现上述氢离子和氧离子的扩散运动。It can be understood that there are various methods for applying an electric field to the first material 110. In one embodiment, the first electrode 210 may be formed on the surface of the first material 110 and the second material 120. The shape of the first electrode 210 is not limited and may be a parallel plate electrode, a rod electrode, or a metal mesh electrode. Hydrogen ion insertion and oxygen ion extraction in the ionic liquid 202 are controlled by the direction of the electric field to extract the first material 110, or oxygen ion insertion and hydrogen ion extraction of the first material 110. Hydrogen ions and oxygen ions are derived from water in the ionic liquid 202. In the ionic liquid 202, the content of water is not limited. Experiments have confirmed that the diffusion of hydrogen ions and oxygen ions described above can be achieved as long as the ionic liquid 202 has a small amount of water (>100 ppm).
在一个实施例中,所述S303进一步包括:提供第二电极220以及电源230。将所述第二电极220与所述第一电极210间隔设置并分别与所述电源230电连接。所述第二电极220的形状不限,可以是平行板电极、棒状电极、金属网电极。在一个实施例中,所述第二电极220为弹簧状金属丝构成的电极。所述电源230可以为各种直流、交流电源230等。所述电源230的电压可调,可以用来控制反应的时间。In one embodiment, the S303 further includes: providing the second electrode 220 and the power source 230. The second electrode 220 is spaced apart from the first electrode 210 and electrically connected to the power source 230, respectively. The shape of the second electrode 220 is not limited, and may be a parallel plate electrode, a rod electrode, or a metal mesh electrode. In one embodiment, the second electrode 220 is an electrode composed of a spring-like wire. The power source 230 can be various DC, AC power sources 230, and the like. The voltage of the power source 230 is adjustable and can be used to control the reaction time.
在一个实施例中,所述第二电极220与所述第一电极210间隔相对设置。在所述第二电极220与所述第一电极210之间形成定向的电场。所述第二电极220、所述第一电极210与所述直流电源230的连接方式不限,可以通过开关控制对所述第二电极220以及所述第二电极220施加电压。可以通过所述电源230与所述第一电极210和所述第二电极220的连接方式来控制施加电场的方向。In one embodiment, the second electrode 220 is spaced apart from the first electrode 210. An oriented electric field is formed between the second electrode 220 and the first electrode 210. The second electrode 220 and the first electrode 210 are connected to the DC power source 230 in an unrestricted manner, and a voltage may be applied to the second electrode 220 and the second electrode 220 by switch control. The direction in which the electric field is applied can be controlled by the manner in which the power source 230 is connected to the first electrode 210 and the second electrode 220.
本实施例中,采用离子液体加电场的方法实现离子的插入或抽出或者原子的插入或抽出。当将所述离子液体202处于高电势,所述第一材料110处于低电势。带正电的氢离子从高电势区扩散进入低电势区。带负电的氧离子从低电势区扩散进入高电势区。所述第一材料110中插入氢离子,同时抽出氧离子。所述第一材料110的面外晶格常数增大。通过所述接触界面对所述第二材料120施加拉伸应力。当将所述离子液体202处于低电势,所述第一材料110处于高电势。带正电的氢离子从高电势区扩散进入低电势区。带负电的氧离子从低电势区扩散进入高电势区。所述第一材料110中插入氧离子,同时抽出氢离子。所述第一材料110的
面外晶格常数减小。通过所述接触界面对所述第二材料120施加挤压应力。In the present embodiment, the insertion or extraction of ions or the insertion or extraction of atoms is carried out by means of an ionic liquid plus an electric field. When the ionic liquid 202 is at a high potential, the first material 110 is at a low potential. The positively charged hydrogen ions diffuse from the high potential region into the low potential region. Negatively charged oxygen ions diffuse from the low potential region into the high potential region. Hydrogen ions are inserted into the first material 110 while oxygen ions are extracted. The out-of-plane lattice constant of the first material 110 is increased. A tensile stress is applied to the second material 120 through the contact interface. When the ionic liquid 202 is at a low potential, the first material 110 is at a high potential. The positively charged hydrogen ions diffuse from the high potential region into the low potential region. Negatively charged oxygen ions diffuse from the low potential region into the high potential region. Oxygen ions are inserted into the first material 110 while hydrogen ions are extracted. The first material 110
The out-of-plane lattice constant is reduced. A compressive stress is applied to the second material 120 through the contact interface.
请参阅图4,图4为本申请实施例提供的应力调控方法中采用金属催化剂加氢的方法实现粒子的插入或抽出的工艺示意图。图4中基底140上沉积有所述第一材料110和所述第二材料120。Please refer to FIG. 4 . FIG. 4 is a schematic diagram of a process for inserting or extracting particles by using a method for hydrogenating a metal catalyst in a stress control method according to an embodiment of the present application. The first material 110 and the second material 120 are deposited on the substrate 140 in FIG.
在一个实施例中,所述S30包括:In one embodiment, the S30 includes:
S302,提供金属催化剂201和含氢反应气体。S302, providing a metal catalyst 201 and a hydrogen-containing reaction gas.
在一个实施例中,所述金属催化剂201的并不限制,只要能催化氢气分解产生氢离子即可。所述金属催化剂201的材质可以是各种金属,如铂、钯、金等。优选地,所述金属催化剂201可以是铂或钯。所述金属催化剂201的结构可以是金属的纳米薄膜、纳米颗粒或条状电极。可以理解,所述金属催化剂201还可以与所述第一材料110的表面接触,能够促进所述氢离子插入所述第一材料110。In one embodiment, the metal catalyst 201 is not limited as long as it can catalyze the decomposition of hydrogen to generate hydrogen ions. The material of the metal catalyst 201 may be various metals such as platinum, palladium, gold, or the like. Preferably, the metal catalyst 201 may be platinum or palladium. The structure of the metal catalyst 201 may be a nano thin film of a metal, a nanoparticle or a strip electrode. It can be understood that the metal catalyst 201 can also be in contact with the surface of the first material 110 to facilitate the insertion of the hydrogen ions into the first material 110.
S304,加热升温至至20摄氏度至200摄氏度,使所述含氢反应气体在所述金属催化剂201的作用下产生氢原子。所述氢原子扩散插入所述第一材料110中以使所述第一材料110的晶格常数发生变化。S304, heating and heating up to 20 degrees Celsius to 200 degrees Celsius, so that the hydrogen-containing reaction gas generates hydrogen atoms under the action of the metal catalyst 201. The hydrogen atoms are diffused into the first material 110 to change a lattice constant of the first material 110.
本实施例的所述金属催化剂加氢的方法可以在反应腔中进行。所述反应腔的具体形式不限。在一个实施例中,所述反应腔为球体,具有开口以便放取试验样品。所述反应腔还具有充、放气口,观察窗,加热装置以及抽真空装置。将所述含氢反应气体充入所述反应腔体。所述反应腔可以保持动态平衡的压强。所述含氢反应气体可以为纯氢气。为了安全起见和隔绝空气中的氧气,可以在氢气中混合缓释气体。因此,通入的所述氢气,也可以是氢气和缓释气体不同比例的混合气体。所述缓释气体可以为氮气、氦气、氖气、氩气、氪气、氙气、氡气。所述氢气与所述缓释气体的混合气体中,所述氢气的体积含量是3%-100%。在一个实施例中,所述缓释气体选择氩气。优选地,采用氢气和氩气的体积比为5:95的混合气体。The method of hydrogenating the metal catalyst of this embodiment can be carried out in a reaction chamber. The specific form of the reaction chamber is not limited. In one embodiment, the reaction chamber is a sphere having an opening for taking a test sample. The reaction chamber also has a charging and discharging port, an observation window, a heating device and a vacuuming device. The hydrogen-containing reaction gas is charged into the reaction chamber. The reaction chamber can maintain a dynamically balanced pressure. The hydrogen-containing reaction gas may be pure hydrogen. For safety reasons and to isolate oxygen from the air, a slow release gas can be mixed in the hydrogen. Therefore, the hydrogen gas that is introduced may also be a mixed gas of different ratios of hydrogen gas and slow-release gas. The sustained release gas may be nitrogen, helium, neon, argon, helium, neon or xenon. In the mixed gas of the hydrogen gas and the sustained-release gas, the volume content of the hydrogen gas is 3% to 100%. In one embodiment, the sustained release gas is selected from argon. Preferably, a mixed gas of hydrogen gas and argon in a volume ratio of 5:95 is used.
可以理解本实施例中,所述金属催化剂201可以提前与所述第一材料110和所述第二材料120混合。在加热升温过程中,所述含氢反应气体在所述金属催化剂201的作用下产生氢原子。所述氢原子扩散插入所述第一材料110中。一般室温下氢气在催化剂的作用下就可以对过渡金属氧化物进行氢化。但为了加快氢化速率,一般对其体系进行低温加热。加热所述
反应腔以使所述氢气氛围的温度升高。所述升温过程,对于加热温度并不作具体限定只要能促进所述氢原子的产生即可。在一个实施例中,所述氢气氛围的温度范围为20摄氏度至200摄氏度。优选地,所述氢气氛围的温度是150摄氏度。It can be understood that in the embodiment, the metal catalyst 201 can be mixed with the first material 110 and the second material 120 in advance. The hydrogen-containing reaction gas generates hydrogen atoms under the action of the metal catalyst 201 during heating and heating. The hydrogen atoms are diffused into the first material 110. The transition metal oxide can be hydrogenated under the action of a catalyst at room temperature. However, in order to accelerate the hydrogenation rate, the system is generally subjected to low temperature heating. Heating the said
The reaction chamber is raised to raise the temperature of the hydrogen atmosphere. In the temperature rising process, the heating temperature is not particularly limited as long as the generation of the hydrogen atoms can be promoted. In one embodiment, the hydrogen atmosphere has a temperature ranging from 20 degrees Celsius to 200 degrees Celsius. Preferably, the temperature of the hydrogen atmosphere is 150 degrees Celsius.
本实施例中,采用金属催化剂加氢的方法实现粒子的插入或抽出。将所述第一材料110和所述第二次材料120通过金属催化剂加氢的方法,实现对所述第一材料110中氢原子的插入或抽出。在所述第一材料110中插入或抽出氢原子改变了所述第一材料110的晶格常数。通过所述接触界面实现对所述第二材料120应力大小的调控。In this embodiment, the insertion or extraction of particles is achieved by a method of hydrogenating a metal catalyst. The first material 110 and the second secondary material 120 are subjected to hydrogenation of a metal catalyst to effect insertion or extraction of hydrogen atoms in the first material 110. Insertion or extraction of hydrogen atoms in the first material 110 changes the lattice constant of the first material 110. The regulation of the stress level of the second material 120 is achieved by the contact interface.
请参阅图5,图5为本申请实施例提供的应力调控方法中采用臭氧退火的方法实现粒子的插入或抽出的示意图。图5中基底140上沉积有第一材料110和第二材料120。Please refer to FIG. 5. FIG. 5 is a schematic diagram of inserting or extracting particles by using an ozone annealing method in a stress control method according to an embodiment of the present application. A first material 110 and a second material 120 are deposited on the substrate 140 in FIG.
在一个实施例中,所述S30包括:S305,提供含氧反应气体。In one embodiment, the S30 includes: S305, providing an oxygen-containing reactive gas.
在一个实施例中,所述含氧反应气体为臭氧,臭氧很不稳定,能够分解为氧分子和氧原子。分解后的氧原子通过扩散插入所述第一材料110中。可以理解,所述含氧反应气体还可以为其他能够提供氧原子的气体,或者其他混合气体。In one embodiment, the oxygen-containing reaction gas is ozone, which is very unstable and capable of decomposing into oxygen molecules and oxygen atoms. The decomposed oxygen atoms are inserted into the first material 110 by diffusion. It can be understood that the oxygen-containing reaction gas can also be other gases capable of providing oxygen atoms, or other mixed gases.
S307,将所述第一材料110和所述第二材料120在所述含氧反应气体中退火处理,以使所述第一材料110的晶格常数发生变化。S307, annealing the first material 110 and the second material 120 in the oxygen-containing reaction gas to change a lattice constant of the first material 110.
在一个实施例中,通过退火处理在所述第一材料110中插入或抽出氧原子。In one embodiment, oxygen atoms are inserted or extracted in the first material 110 by an annealing process.
在一个实施例中,所述S307包括:S307a,在所述含氧反应气体中,将所述第一材料110和所述第二材料120加热升温至第一温度。所述含氧反应气体产生氧原子。所述氧原子扩散插入所述第一材料110。In one embodiment, the S307 includes: S307a, in the oxygen-containing reaction gas, heating the first material 110 and the second material 120 to a first temperature. The oxygen-containing reaction gas generates an oxygen atom. The oxygen atoms are diffused into the first material 110.
在一个实施例中,将所述第一材料110和所述第二材料120加热升温从而加速氧原子在所述第一材料110中的扩散。氧原子扩散插入所述第一材料110,改变所述第一材料110的晶格常数。在一个实施例中,所述第一温度为200摄氏度至400摄氏度。优选地,所述第一温度为300摄氏度。In one embodiment, the first material 110 and the second material 120 are heated to increase the diffusion of oxygen atoms in the first material 110. The oxygen atoms are diffused into the first material 110 to change the lattice constant of the first material 110. In one embodiment, the first temperature is between 200 degrees Celsius and 400 degrees Celsius. Preferably, the first temperature is 300 degrees Celsius.
S307b,使所述第一材料110和所述第二材料120在200摄氏度至400摄氏度保持15分钟至60分钟。S307b, the first material 110 and the second material 120 are maintained at 200 degrees Celsius to 400 degrees Celsius for 15 minutes to 60 minutes.
在一个实施例中,所述第一时间为15分钟至60分钟。优选地,所述第一时间为30分
钟。保持所述第一时间是为了使氧原子能够充分进入所述第一材料110。所述第一材料110的晶格常数能够成分的改变,可以充分的调控所述第二材料120的应力大小。In one embodiment, the first time is from 15 minutes to 60 minutes. Preferably, the first time is 30 minutes
bell. The first time is maintained to enable oxygen atoms to sufficiently enter the first material 110. The lattice constant of the first material 110 can change the composition, and the stress of the second material 120 can be sufficiently regulated.
本实施例中,采用臭氧退火的方法实现氧原子的插入或抽出。将所述第一材料110和所述第二材料120置于含氧的反应气体中。所述含氧反应气体提供氧原子。氧原子扩散进入所述第一材料110,使所述第一材110的晶格常数发生改变。通过所述接触界面实现对所述第二材料120应力大小的调控。In this embodiment, the insertion or extraction of oxygen atoms is achieved by an ozone annealing method. The first material 110 and the second material 120 are placed in an oxygen-containing reaction gas. The oxygen-containing reaction gas provides an oxygen atom. Oxygen atoms diffuse into the first material 110, causing a change in the lattice constant of the first material 110. The regulation of the stress level of the second material 120 is achieved by the contact interface.
以下给出采用本申请提供的应力调控方法来调控所述第二材料120的应力大小的具体实施例。实施例1:本实施例提供了SrCoO2.5-CoFe2O4的实施例。其中,SrCoO2.5为所述第一材料110,CoFe2O4为所述第二材料120。以下介绍所述SrCoO2.5-CoFe2O4样品的结构表征和本申请的应力调控方法下所述SrCoO2.5-CoFe2O4样品的应力大小变化情况。Specific embodiments for adjusting the stress level of the second material 120 using the stress control method provided by the present application are given below. Example 1: This example provides an example of SrCoO 2.5 -CoFe 2 O 4 . Wherein, SrCoO 2.5 is the first material 110, and CoFe 2 O 4 is the second material 120. The following describes the magnitude of the stress 2.5 -CoFe 2 O 4 changes of the sample under the SrCoO SrCoO 2.5 -CoFe 2 O 4 Structural Characterization stress-control method of the present application and samples.
请参阅图6,图6为所述SrCoO2.5-CoFe2O4样品在臭氧中退火前后的X射线衍射图谱。图6中处于下方的一条曲线是退火前所述SrCoO2.5-CoFe2O4样品的X射线衍射图。图6中处于上方的一条曲线是经过臭氧退火之后所述SrCoO2.5-CoFe2O4样品的X射线衍射图。图6中,三角号标出的峰是SrCoO2.5的特征峰,圆点标出的峰是CoFe2O4的特征峰,星号是基底140的特征峰。这说明经过臭氧退火之后SrCoO2.5变成SrCoO3-δ,空心的三角号标出的是SrCoO3-δ。图6中SrCoO2.5相变为SrCoO3-δ相,证明了所述第一材料110的晶格常数发生了变化。为了能够清晰的辨认所述第一材料110晶格常数的变化,对图6中40°-50°处的谱线进行了放大处理,得到图7。图7为所述SrCoO2.5-CoFe2O4样品在40°-50°处放大的谱线。图7中可以看到SrCoO2.5应力调控后峰值的变化,从而计算得到所述第一材料110SrCoO2.5的面外晶格常数减小了3.53%。即所述第一材料110SrCoO2.5提供了3.53%的挤压应力。图7中也可以看到所述第二材料120CoFe2O4的峰位向右移动,经计算得到第二材料120CoFe2O4的晶格常数变小了0.97%。由此可知采用本申请提供的应力调控方法可以对第二材料施加3.53%的挤压应力,从而改变了第二材料的晶格常数。Please refer to FIG. 6. FIG. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample before and after annealing in ozone. The lower curve in Fig. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample before annealing. The upper curve in Fig. 6 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample after ozone annealing. In FIG. 6, No. triangular peaks are indicated characteristic peaks SrCoO 2.5, dot marked peaks are characteristic peaks CoFe 2 O 4, asterisks substrate 140 peaks. This indicates that SrCoO 2.5 becomes SrCoO 3-δ after ozone annealing, and the hollow triangle number indicates SrCoO 3-δ . The phase change of SrCoO 2.5 in Fig. 6 to the SrCoO 3-δ phase proves that the lattice constant of the first material 110 has changed. In order to clearly recognize the change in the lattice constant of the first material 110, the spectral line at 40°-50° in Fig. 6 is enlarged to obtain Fig. 7. Figure 7 is a line enlarged of the SrCoO 2.5 -CoFe 2 O 4 sample at 40 ° - 50 °. The change in peak value after SrCoO 2.5 stress regulation can be seen in Fig. 7, so that the out-of-plane lattice constant of the first material 110SrCoO 2.5 is calculated to be reduced by 3.53%. That is, the first material 110SrCoO 2.5 provides a crush stress of 3.53%. It can also be seen in Fig. 7 that the peak position of the second material 120CoFe 2 O 4 is shifted to the right, and the lattice constant of the second material 120CoFe 2 O 4 is calculated to be 0.97%. It can be seen that the stress control method provided by the present application can apply a compressive stress of 3.53% to the second material, thereby changing the lattice constant of the second material.
请参阅图8,图8为所述SrCoO2.5-CoFe2O4样品采用金属催化剂201加氢前后的X射线衍射图谱。图8中,实心三角号标出的峰是SrCoO2.5的特征峰。圆点标出的是CoFe2O4的峰。星号是基底140的峰。空心的三角号标出的是SrCoO2.5H。如图8所示,处于下方的一条曲线
是采用换源法生长的所述SrCoO2.5-CoFe2O4样品的X射线衍射图。图8中处于上方的一条曲线是采用金属催化剂加氢的方法插入氢离子以后,所述SrCoO2.5-CoFe2O4样品的X射线衍射图。从图8中变化的两条曲线可以看出所述SrCoO2.5-CoFe2O4样品的整体结构发生了变化。整体结构的变化主要体现在面外方向晶格常数的变化。为了能够清晰的辨认所述SrCoO2.5-CoFe2O4样品整体结构的变化,对图8中的部分谱线进行了放大处理。图9为所述SrCoO2.5-CoFe2O4样品在图8中40°-50°处的放大谱线。图9中清楚的可以看到SrCoO2.5的峰值变化,从而计算得到所述第一材料110SrCoO2.5面外晶格常数增加了6.22%。即所述第一材料110SrCoO2.5提供了6.22%的拉伸应力。而所述第二材料120CoFe2O4的峰位向左移动,经计算得到第二材料120CoFe2O4的晶格常数增大了0.40%。由此可知采用本申请提供的应力调控方法可以对第二材料120施加6.22%的拉伸应力,从而改变了第二材料120的晶格常数。Please refer to FIG. 8. FIG. 8 is an X-ray diffraction spectrum of the SrCoO 2.5 -CoFe 2 O 4 sample before and after hydrogenation of the metal catalyst 201. In Fig. 8, the peak indicated by the solid triangle is a characteristic peak of SrCoO 2.5 . The dots indicate the peak of CoFe 2 O 4 . The asterisk is the peak of the substrate 140. The hollow triangle number indicates SrCoO 2.5 H. As shown in Fig. 8, a curve below is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample grown by the exchange method. The upper curve in Fig. 8 is an X-ray diffraction pattern of the SrCoO 2.5 -CoFe 2 O 4 sample after hydrogen ion insertion by a method of hydrogenation of a metal catalyst. It can be seen from the two curves varying in Fig. 8 that the overall structure of the SrCoO 2.5 -CoFe 2 O 4 sample has changed. The change in the overall structure is mainly reflected in the change of the lattice constant in the out-of-plane direction. In order to clearly recognize the change in the overall structure of the SrCoO 2.5 -CoFe 2 O 4 sample, part of the line in Fig. 8 was enlarged. Figure 9 is a magnified line of the SrCoO 2.5 -CoFe 2 O 4 sample at 40 ° - 50 ° in Figure 8. It is clear in Fig. 9 that the peak variation of SrCoO 2.5 can be seen, so that the out-of-plane lattice constant of the first material 110SrCoO 2.5 is calculated to increase by 6.22%. That is, the first material 110SrCoO 2.5 provides a tensile stress of 6.22%. The peak position of the second material 120CoFe 2 O 4 is shifted to the left, and the lattice constant of the second material 120CoFe 2 O 4 is calculated to be increased by 0.40%. It can be seen that the stress control method provided by the present application can apply a 6.22% tensile stress to the second material 120, thereby changing the lattice constant of the second material 120.
实施例2:本实施例提供了NiFe2O4-SrCoO2.5样品的实施例。其中,SrCoO2.5为所述第一材料110,NiFe2O4为所述第二材料120。以下介绍所述NiFe2O4-SrCoO2.5样品的结构表征和本申请的应力调控方法下所述NiFe2O4-SrCoO2.5样品的应力大小变化情况:Example 2: This example provides an example of a NiFe 2 O 4 -SrCoO 2.5 sample. Wherein, SrCoO 2.5 is the first material 110, and NiFe 2 O 4 is the second material 120. The following describes the structural characterization of stress changes in the size of the NiFe 2 O 4 -SrCoO 2.5 sample and the method of the present application is the stress regulation of NiFe 2 O 4 -SrCoO 2.5 Sample conditions:
本实施例中,所述NiFe2O4-SrCoO2.5样品具有1-3构型。SrCoO2.5与所述NiFe2O4的生长比例为4:1。图10为所述NiFe2O4-SrCoO2.5样品的表面形貌表征。图10中的明暗表示样品表面的高低,亮的高,暗的低。图10中亮的部分且形成矩形是NiFe2O4。图10中暗且平整的地方是SrCoO2.5。In this embodiment, the NiFe 2 O 4 -SrCoO 2.5 sample has a 1-3 configuration. The growth ratio of SrCoO 2.5 to the NiFe 2 O 4 was 4:1. Figure 10 is a representation of the surface topography of the NiFe 2 O 4 -SrCoO 2.5 sample. The light and dark in Fig. 10 indicates the height of the surface of the sample, which is high in brightness and low in dark. The bright portion in Fig. 10 and formed into a rectangle is NiFe 2 O 4 . The dark and flat place in Figure 10 is SrCoO 2.5 .
图11为所述NiFe2O4-SrCoO2.5样品的X射线衍射图。图11中可以看到用米字符号标出的峰为所述基底140SrTiO3(002)的峰。所述基底140左侧用三角号标出的峰是所述第一材料110SrCoO2.5的峰。用圆标出的峰是所述第二材料120NiFe2O4的峰。Figure 11 is an X-ray diffraction pattern of the NiFe 2 O 4 -SrCoO 2.5 sample. It can be seen in Fig. 11 that the peak indicated by the rice character is the peak of the substrate 140SrTiO 3 (002). The number of substrate 140 left triangular peaks are marked 110SrCoO 2.5 peak of the first material. The peak marked with a circle is the peak of the second material 120NiFe 2 O 4 .
采用离子液体加电场的方法调控所述NiFe2O4-SrCoO2.5样品的应力大小。图12为原位X射线衍射测量所述NiFe2O4-SrCoO2.5样品的结构变化。从图12中可以看出:对所述NiFe2O4-SrCoO2.5样品加正电压时,所述离子液体202调控插入氢离子,抽出氧离子。所述NiFe2O4-SrCoO2.5样品中所述NiFe2O4随所述SrCoO2.5样品的面外晶格常数增大。所述正电压,即所述离子液体202处于高电势,所述第一材料110处于低电势。使所述第一材料110中插入氢离子并抽出氧离子,从而使得所述第一材料110的面外晶格常数增大。此时,所述第一
材料110对所述第二材料120施加拉伸应力。而对所述NiFe2O4-SrCoO2.5样品加负电压时,所述离子液体202调控抽出氢离子,插入氧离子。所述NiFe2O4-SrCoO2.5样品中所述NiFe2O4随SrCoO2.5的面外晶格减小而减小。所述负电压,即所述离子液体202处于低电势,所述第一材料110处于高电势。使所述第一材料110中插入氧离子并抽出氢离子,从而使得所述第一材料110的面外晶格常数减小并对所述第二材料120施加挤压应力。实验证实:再施加正电压时,所述第一次材料110和所述第二材料120的面外晶格常数都能回复初始。说明应力调控过程是可以反复进行的。在整个离子液体加电场的调控过程中,所述第一材料110SrCoO2.5的X射线衍射峰位从初始的46.2°变到44.2°,再变到47.8°。所述第一材料110SrCoO2.5的晶格常数从初始态拉伸了3.1%,再相对于初始态压缩了4.3%。相对应的,所述离子液体202加正电压时,所述第一材料110对所述第二材料120施加了3.1%的拉伸应力。所述离子液体202加负电压时,所述第一材料110对所述第二材料120施加了4.3%的挤压应力。当所述样品施加正向电压时,由于所述第一材料110的变化导致所述第二材料120相对于所述第二材料120的单晶材料的晶格常数增加了0.42%。当所述样品施加反向电压时,所述第二材料120相对于所述第二材料120的单晶材料的晶格常数缩小了1.51%。即所述第二材料120总体的晶格常数总体变化可以达到1.93%。The stress of the NiFe 2 O 4 -SrCoO 2.5 sample was adjusted by an ionic liquid plus electric field method. Figure 12 is a graph showing the structural change of the NiFe 2 O 4 -SrCoO 2.5 sample by in-situ X-ray diffraction. As can be seen from Fig. 12, when a positive voltage is applied to the NiFe 2 O 4 -SrCoO 2.5 sample, the ionic liquid 202 regulates the insertion of hydrogen ions and extracts oxygen ions. The NiFe 2 O 4 -SrCoO 2.5 sample NiFe 2 O 4 with the lattice constant of the outer surface of the sample increases SrCoO 2.5. The positive voltage, i.e., the ionic liquid 202, is at a high potential and the first material 110 is at a low potential. Hydrogen ions are inserted into the first material 110 and oxygen ions are extracted, thereby increasing the out-of-plane lattice constant of the first material 110. At this time, the first material 110 applies a tensile stress to the second material 120. When a negative voltage is applied to the NiFe 2 O 4 -SrCoO 2.5 sample, the ionic liquid 202 regulates the extraction of hydrogen ions and inserts oxygen ions. The NiFe 2 O 4 -SrCoO 2.5 sample NiFe 2 O 4 with the outer surface of the lattice SrCoO 2.5 decreases decreases. The negative voltage, i.e., the ionic liquid 202, is at a low potential and the first material 110 is at a high potential. Oxygen ions are inserted into the first material 110 and hydrogen ions are extracted, thereby reducing the out-of-plane lattice constant of the first material 110 and applying a compressive stress to the second material 120. Experiments have confirmed that the out-of-plane lattice constants of the first material 110 and the second material 120 can all return to the original when a positive voltage is applied. It shows that the stress control process can be repeated. During the regulation of the entire ionic liquid plus electric field, the X-ray diffraction peak position of the first material 110SrCoO 2.5 is changed from the initial 46.2° to 44.2° and then to 47.8°. The lattice constant of the first material 110SrCoO 2.5 was stretched by 3.1% from the initial state and then by 4.3% with respect to the initial state. Correspondingly, when the ionic liquid 202 is applied with a positive voltage, the first material 110 applies a tensile stress of 3.1% to the second material 120. When the ionic liquid 202 is applied with a negative voltage, the first material 110 applies a compressive stress of 4.3% to the second material 120. When the sample is applied with a forward voltage, the lattice constant of the second material 120 relative to the single crystal material of the second material 120 is increased by 0.42% due to a change in the first material 110. When the sample is applied with a reverse voltage, the lattice constant of the second material 120 relative to the single crystal material of the second material 120 is reduced by 1.51%. That is, the overall variation of the lattice constant of the second material 120 can reach 1.93%.
本申请中的实施例给出了一个应力调控的方法,此处不可能穷举所有的实施例。可以理解通过插入或抽出粒子的方法改变一种材料的晶格常数从而改变另一种材料的应力大小的方法均在本申请的保护范围之内。材料的晶格常数变化是极为重要且根源的变化,其变化会显著影响材料的结构、性质等多方面的变化,还会带来电子结构,配位环境等各种变化。The embodiment of the present application provides a method of stress regulation, and it is not possible to exhaust all of the embodiments herein. It will be understood that the method of changing the lattice constant of one material by the method of inserting or extracting particles to change the stress of the other material is within the scope of the present application. The change of the lattice constant of the material is extremely important and the change of the root source. The change will significantly affect the structure and properties of the material, and also bring about various changes in the electronic structure and the coordination environment.
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-described embodiments may be combined in any combination. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described, but as long as there is no contradiction in the combination of these technical features, It should be considered as the scope of this manual.
以上所述实施例仅表达了本申请的几种实施方式,其描述虽较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干变形和改进,这些都属于本申请的保护范围。因此,本申请专利的保护范围应以所附权利要求为准。
The above-mentioned embodiments are merely illustrative of several embodiments of the present application, and the description thereof is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the present application. Therefore, the scope of the invention should be determined by the appended claims.
Claims (10)
- 一种应力调控方法,其特征在于,包括:A stress control method, comprising:S10,提供结构式为ABOxHy的第一材料,其中,A为碱土金属元素和稀土金属元素中的一种或多种,B为过渡族金属元素的一种或多种,x的取值范围为1-3,y的取值范围为0-3;S10, providing a first material of the structural formula ABO x H y , wherein A is one or more of an alkaline earth metal element and a rare earth metal element, and B is one or more of transition metal elements, and the value of x The range is 1-3, and the range of y is 0-3;S20,提供第二材料,使所述第一材料与所述第二材料接触并在所述第一材料和第二材料之间形成接触界面;S20, providing a second material, contacting the first material with the second material and forming a contact interface between the first material and the second material;S30,将粒子插入或抽出所述第一材料,改变所述第一材料的晶格常数,实现对所述第二材料的应力调控,所述粒子包括离子、原子中的一种或多种。S30, inserting or extracting particles into the first material, changing a lattice constant of the first material, and realizing stress regulation on the second material, the particles including one or more of ions and atoms.
- 如权利要求1所述的应力调控方法,其特征在于,所述离子包括氢离子、锂离子、钠离子、钾离子、铷离子、铍离子、镁离子、钙离子、锶离子、钡离子、氮离子、磷离子、氧离子、硫离子、硒离子和氟离子中的一种或多种;The stress control method according to claim 1, wherein the ions include hydrogen ions, lithium ions, sodium ions, potassium ions, barium ions, barium ions, magnesium ions, calcium ions, barium ions, barium ions, nitrogen. One or more of ions, phosphorus ions, oxygen ions, sulfur ions, selenium ions, and fluoride ions;所述原子包括氢原子、锂原子、钠原子、钾原子、铷原子、铍原子、镁原子、钙原子、锶原子、钡原子、氮原子、磷原子、氧原子、硫原子、硒原子和氟原子中的一种或多种。The atom includes a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, a helium atom, a helium atom, a magnesium atom, a calcium atom, a helium atom, a helium atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a selenium atom, and fluorine. One or more of the atoms.
- 如权利要求1所述的应力调控方法,其特征在于,所述第二材料包括金属单质、金属氧化物、合金中的一种或几种。The stress control method according to claim 1, wherein the second material comprises one or more of a simple substance of a metal, a metal oxide, and an alloy.
- 如权利要求1所述的应力调控方法,其特征在于,所述第二材料包括纳米材料,所述纳米材料包括零维的团簇、人造原子、纳米微粒;一维的纳米线、纳米管、纳米棒、纳米纤维;二维的纳米带、超薄膜、多层膜。The stress control method according to claim 1, wherein the second material comprises a nano material comprising zero-dimensional clusters, artificial atoms, nanoparticles; one-dimensional nanowires, nanotubes, Nanorods, nanofibers; two-dimensional nanobelts, ultrathin films, multilayer films.
- 如权利要求1所述的应力调控方法,其特征在于,所述第二材料包括有机功能材料,所述有机功能材料包括具有力学功能的有机材料、具有化学功能的有机材料、具有物理化学功能的有机材料、具有生物化学功能的有机材料、具有电学功能的有机材料。The stress control method according to claim 1, wherein the second material comprises an organic functional material, the organic functional material comprising an organic material having a mechanical function, an organic material having a chemical function, and a physicochemical function. Organic materials, organic materials with biochemical functions, and organic materials with electrical functions.
- 如权利要求1所述的应力调控方法,其特征在于,所述S30包括:The stress control method according to claim 1, wherein the S30 comprises:S301,提供离子液体,所述离子液体中包含氢离子和氧离子,将所述第一材料与所述第二材料设置于所述离子液体中;S301, providing an ionic liquid, wherein the ionic liquid contains hydrogen ions and oxygen ions, and the first material and the second material are disposed in the ionic liquid;S303,给所述离子液体施加电场,从而使得所述离子液体中的氢离子或氧离子插入所述第一材料,或者使得氢离子或氧离子从所述第一材料中抽出。 S303, applying an electric field to the ionic liquid such that hydrogen ions or oxygen ions in the ionic liquid are inserted into the first material, or hydrogen ions or oxygen ions are extracted from the first material.
- 如权利要求6所述的应力调控方法,其特征在于,所述S303中,将所述离子液体处于高电势,所述第一材料处于低电势,使离子液体中的氢离子插入所述第一材料或氧离子从所述第一材料中抽出,使得所述第一材料的面外晶格常数增大,从而对所述第二材料施加拉伸应力,实现对所述第二材料的应力调控。The stress control method according to claim 6, wherein in the S303, the ionic liquid is at a high potential, the first material is at a low potential, and hydrogen ions in the ionic liquid are inserted into the first Extracting material or oxygen ions from the first material such that an out-of-plane lattice constant of the first material is increased to apply tensile stress to the second material to effect stress regulation on the second material .
- 如权利要求6所述的应力调控方法,其特征在于,所述S303中,将所述离子液体处于低电势,所述第一材料处于高电势,使离子液体中的氧离子插入所述第一材料或氢离子从所述第一材料中抽出,使得所述第一材料的面外晶格常数减小,从而对所述第二材料施加挤压应力,实现对所述第二材料的应力调控。The stress control method according to claim 6, wherein in the S303, the ionic liquid is at a low potential, the first material is at a high potential, and oxygen ions in the ionic liquid are inserted into the first Extracting material or hydrogen ions from the first material such that an out-of-plane lattice constant of the first material is reduced, thereby applying a compressive stress to the second material to effect stress regulation on the second material .
- 如权利要求1中所述的应力调控方法,其特征在于,所述S30包括:The stress control method according to claim 1, wherein said S30 comprises:S302,提供金属催化剂和含氢反应气体;S302, providing a metal catalyst and a hydrogen-containing reaction gas;S304,加热升温至20摄氏度至200摄氏度,使所述含氢反应气体在所述金属催化剂的作用下产生氢原子,所述氢原子扩散插入所述第一材料中以使所述第一材料的晶格常数发生变化。S304, heating and heating to 20 degrees Celsius to 200 degrees Celsius, causing the hydrogen-containing reaction gas to generate hydrogen atoms under the action of the metal catalyst, the hydrogen atoms being diffused into the first material to make the first material The lattice constant changes.
- 如权利要求1中所述的应力调控方法,其特征在于,所述S30包括:The stress control method according to claim 1, wherein said S30 comprises:S305,提供含氧反应气体;S305, providing an oxygen-containing reaction gas;S307,将所述第一材料和所述第二材料加热升温至200摄氏度至400摄氏度,使所述的第一材料被含氧反应气体氧化,氧以氧原子的形式扩散插入所述第一材料中以使所述第一材料的晶格常数发生变化。 S307, heating the first material and the second material to a temperature of 200 degrees Celsius to 400 degrees Celsius, wherein the first material is oxidized by an oxygen-containing reaction gas, and oxygen is diffused into the first material in the form of oxygen atoms. Medium to change the lattice constant of the first material.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710128020.0A CN108525609B (en) | 2017-03-06 | 2017-03-06 | stress control method |
CN201710128020.0 | 2017-03-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018161643A1 true WO2018161643A1 (en) | 2018-09-13 |
Family
ID=63448354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2017/113206 WO2018161643A1 (en) | 2017-03-06 | 2017-11-27 | Stress control method |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108525609B (en) |
WO (1) | WO2018161643A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108649239B (en) * | 2018-05-14 | 2021-06-15 | 陕西科技大学 | A method for regulating the lattice stress of oxide-type electrocatalysts |
CN114682158B (en) * | 2020-12-28 | 2023-01-10 | 北京高压科学研究中心 | Electrochemical nanometer pressure cavity |
CN115318205A (en) * | 2022-08-15 | 2022-11-11 | 南方科技大学 | Quasi-one-dimensional spinning glass material single crystal and preparation method and application thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4966663A (en) * | 1988-09-13 | 1990-10-30 | Nanostructures, Inc. | Method for forming a silicon membrane with controlled stress |
JPH09107113A (en) * | 1994-09-09 | 1997-04-22 | Kyunikus Computer Kk | Method for manufacturing silicon membrane having adjusted residual stress |
US20090090938A1 (en) * | 2007-10-04 | 2009-04-09 | International Business Machines Corporation | Channel stress engineering using localized ion implantation induced gate electrode volumetric change |
CN102412184A (en) * | 2011-05-23 | 2012-04-11 | 上海华力微电子有限公司 | Preparation Method of Shallow Trench Isolation Structure Using Ion Implantation to Adjust Isolation Oxide Stress |
CN102723400A (en) * | 2011-12-31 | 2012-10-10 | 中国科学院半导体研究所 | A Method of Controlling the Bandgap of Bismuth Multiferrate Epitaxial Thin Films on SrTiO3 Substrate |
CN102751231A (en) * | 2012-03-13 | 2012-10-24 | 清华大学 | Semiconductor structure and forming method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1153288C (en) * | 2001-03-28 | 2004-06-09 | 华邦电子股份有限公司 | A inline mechanism for semiconductor component |
CN1169615C (en) * | 2002-08-01 | 2004-10-06 | 上海交通大学 | Process for preparing bridge frame laminated structure nano composite material |
US8398883B2 (en) * | 2009-03-19 | 2013-03-19 | Advanced Lithium Electrochemistry Co., Ltd. | Electrochemical composition and associated technology |
CN103985633B (en) * | 2013-02-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of PMOS transistor |
CN106469635B (en) * | 2016-10-08 | 2018-03-06 | 武汉华星光电技术有限公司 | Ion implantation apparatus |
-
2017
- 2017-03-06 CN CN201710128020.0A patent/CN108525609B/en active Active
- 2017-11-27 WO PCT/CN2017/113206 patent/WO2018161643A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4966663A (en) * | 1988-09-13 | 1990-10-30 | Nanostructures, Inc. | Method for forming a silicon membrane with controlled stress |
JPH09107113A (en) * | 1994-09-09 | 1997-04-22 | Kyunikus Computer Kk | Method for manufacturing silicon membrane having adjusted residual stress |
US20090090938A1 (en) * | 2007-10-04 | 2009-04-09 | International Business Machines Corporation | Channel stress engineering using localized ion implantation induced gate electrode volumetric change |
CN102412184A (en) * | 2011-05-23 | 2012-04-11 | 上海华力微电子有限公司 | Preparation Method of Shallow Trench Isolation Structure Using Ion Implantation to Adjust Isolation Oxide Stress |
CN102723400A (en) * | 2011-12-31 | 2012-10-10 | 中国科学院半导体研究所 | A Method of Controlling the Bandgap of Bismuth Multiferrate Epitaxial Thin Films on SrTiO3 Substrate |
CN102751231A (en) * | 2012-03-13 | 2012-10-24 | 清华大学 | Semiconductor structure and forming method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN108525609B (en) | 2020-11-06 |
CN108525609A (en) | 2018-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Mani et al. | Coupling of piezocatalysis and photocatalysis for efficient degradation of methylene blue by Bi0. 9Gd0. 07La0. 03FeO3 nanotubes | |
Bai et al. | Sensing performance and mechanism of Fe-doped ZnO microflowers | |
Vayssieres et al. | Purpose-built metal oxide nanomaterials. The emergence of a new generation of smart materials | |
Shah et al. | Novel application of multiferroic compound for green electricity generation fabricated as hydroelectric cell | |
Yu et al. | Metal nanoparticle exsolution on a perovskite stannate support with high electrical conductivity | |
Sovizi et al. | Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering | |
WO2018161643A1 (en) | Stress control method | |
US11217809B2 (en) | Solid-state fuel battery and method for making solid-state electrolyte | |
US20160194205A1 (en) | Hybrid graphene materials and methods of fabrication | |
CN111155143B (en) | Preparation method of two-dimensional layered metal organic framework nano material | |
Ahila et al. | Influence of annealing on phase transformation and specific capacitance enhancement in Bi2O3 | |
WO2006129413A1 (en) | Electrochemical electrode utilizing nickeliferous nanostructure of dendritic structure in active layer thereof and process for producing the same | |
Chen et al. | Water oxidation on CrMnFeCoNi high entropy alloy: Improvement through rejuvenation and spin polarization | |
Khosrow-pour et al. | Large-scale synthesis of uniform lanthanum oxide nanowires via template-free deposition followed by heat-treatment | |
Bouakaz et al. | Physical properties of the delafossite CuCoO2 synthesized by co-precipitation/hydrothermal route | |
JP6831099B2 (en) | Fuel cell and water electrolyzer | |
Mathankumar et al. | Pulsed laser deposition as an efficient tool to enhance the performance of electrocatalysis design, strategies and current perspectives | |
Huang et al. | Strain engineering induced surfacial catalytic amorphous Ni3C with room temperature ferromagnetism for magnetic heating enhancement of overall water-splitting | |
Tabakovic et al. | Stress evolution in CoxFe1− x (x= 0.33–0.87) electrodeposited films | |
Ait Ahmed et al. | Morphological and optical properties of ZnO thin films grown on Si and ITO glass substrates | |
Kaneda et al. | Ozone generation by a TaOx and Pt composite insulator-coated Ti electrode | |
CN108529685B (en) | Composite material and its preparation method | |
Kang et al. | Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries | |
EP1360735B1 (en) | Device and method for converting heat and/or radiation energy into electric energy | |
DE112019003128T5 (en) | PROTON-CONDUCTING TWO-DIMENSIONAL AMORPHERIC CARBON FILM FOR GAS MEMBRANE AND FUEL CELL APPLICATIONS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17899786 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17899786 Country of ref document: EP Kind code of ref document: A1 |