WO2018142623A1 - Procédé de formation d'évidement de tampon de polissage et tampon de polissage - Google Patents
Procédé de formation d'évidement de tampon de polissage et tampon de polissage Download PDFInfo
- Publication number
- WO2018142623A1 WO2018142623A1 PCT/JP2017/004259 JP2017004259W WO2018142623A1 WO 2018142623 A1 WO2018142623 A1 WO 2018142623A1 JP 2017004259 W JP2017004259 W JP 2017004259W WO 2018142623 A1 WO2018142623 A1 WO 2018142623A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing pad
- polishing
- recess
- layer
- forming
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 212
- 238000000034 method Methods 0.000 title claims description 42
- 238000000227 grinding Methods 0.000 claims description 38
- 239000000428 dust Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 4
- 238000005452 bending Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 57
- 238000005520 cutting process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007730 finishing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 241000270666 Testudines Species 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a method for forming a recess of a polishing pad used for polishing an object to be polished and a polishing pad.
- a sheet-like abrasive called a polishing pad has been widely used to polish semiconductor wafers cut from ingots and intermediate products produced in the manufacturing process of precision equipment represented by semiconductor integrated circuits. ing.
- a polishing pad having a concave portion such as a streak-like groove formed on the surface is also known, and various methods have been proposed for forming the concave portion. For example, in the method disclosed in Patent Document 1, a concavo-convex shape is formed on the surface of the polishing sheet using a sand blasting method in which a fine abrasive is sprayed.
- Patent Document 1 discloses a method for forming a concavo-convex shape in a heating embossing process, and a method for curing after applying and embossing a non-adhesive reactive resin instead of the sandblasting method. .
- Patent Document 2 In the method disclosed in Patent Document 2, first, a lower layer formed into a disk shape and an upper layer having the same shape as the lower layer are prepared, and the upper layer is cut radially. At that time, the width of the cut is matched with the width of the groove to be formed. Next, a pad piece cut into a fan shape is pasted on the lower layer. As a result, radial grooves are formed on the surface of the polishing pad.
- Patent Document 3 discloses a method of forming a narrow groove on the surface of a semiconductor CMP processing pad by cutting a urethane foam pad with a milling cutter.
- Patent Document 4 discloses a method of forming a recess on the surface of a polishing layer included in a polishing sheet using a printing method such as screen printing, gravure printing, or gravure offset printing.
- Patent Document 5 discloses a method of forming a CMP pad (porous polishing pad) using laser sintering.
- the method includes focusing a laser beam from a laser into a sintering nozzle and injecting fluidized thermoplastic particles into the sintering nozzle through an injection port.
- the thermoplastic particles are sintered with a laser beam, and the sintered thermoplastic particles are selectively deposited on a plate. Thereby, the part which is not deposited becomes a groove.
- a coating film is formed by applying a resin solution onto a precursor sheet-forming substrate having an uneven shape. This coating film is formed so as to follow the uneven shape of the substrate and the coating film surface becomes flat.
- the base material is attached to the resin sheet from which the base material has been peeled off from the structure via an adhesive layer. Then, the skin layer region is curved / bent in the thickness direction by pressing the skin layer region portion toward the pressure-sensitive adhesive layer side using a press. Thereby, a groove is formed on the skin layer region side of the resin sheet.
- a polishing sheet having a large number of vertically long bubbles is formed using a wet film forming method.
- the surface of the polishing sheet where the bubbles are reduced in diameter is ground or sliced to open the tear-type bubbles on the polishing surface of the polishing sheet.
- the protective sheet which suppresses a temperature rise is arrange
- the heated mold is pressed against the surface on which the protective sheet is disposed. Since this mold has a convex portion of a predetermined shape, a groove corresponding to the concave portion of the mold is formed on the polishing surface by this pressing.
- the quality of the polishing pad has a great influence on the yield of objects to be polished using the polishing pad, in recent years, the required specifications from the user side who uses the polishing pad are increasing. As such a requirement, it is possible to respond flexibly to diversification of specifications including complicated concave patterns, and the concave portions (grooves) formed by cutting with a cutter are preferable because the inner surfaces of the concave portions are roughened. If the unevenness is square, the object to be polished is caught during polishing, which is not preferable.
- the present invention has been made in view of such circumstances, and an object of the present invention is to provide a high-quality polishing pad that meets the user's request regarding the recess.
- the first invention provides a method of forming a recess in the surface of a polishing pad.
- a polishing pad is disposed on the work surface.
- the work surface is provided with a convex pattern corresponding to the concave pattern to be formed on the surface of the polishing layer provided in the polishing pad.
- the surface of the polishing layer raised according to the convex pattern on the work surface is partially removed in the thickness direction while applying an external force to the polishing pad to bend the polishing pad. Thereby, a recess is formed on the surface of the polishing layer.
- the first step may include a step of placing a jig on the work surface prior to placement of the polishing pad on the work surface.
- This jig has a base member and a protrusion.
- the base member has a shape corresponding to the surface shape of the polishing pad and has air permeability.
- the protrusion is attached to protrude from the surface of the base member, and has a convex pattern corresponding to the concave pattern to be formed on the surface of the polishing layer.
- the jig disposed on the work surface is removed, the polishing pad is rearranged on the work surface, and the surface of the polishing layer excluding the recess is ground to form a flat polishing surface.
- These steps may be further provided.
- the removal of the polishing layer in the second step is preferably performed by grinding only the raised surface of the polishing layer.
- the second step includes a step of sucking and removing dust generated by grinding the raised surface of the polishing layer.
- the second invention provides a polishing pad provided with a polishing layer.
- the polishing layer has a flat polishing surface that is a part of the surface, a concave portion that is partially provided on the surface, and that is recessed from the surface, and a flat back surface that is opposite to the surface.
- the thickness of the polishing layer gradually decreases from the polishing surface toward the recess. Further, the rate of change of the thickness of the polishing layer gradually increases from the polishing surface toward the side wall surface of the recess, and gradually decreases from the side wall surface of the recess toward the bottom surface of the recess.
- the roughness of the side wall surface and the bottom surface of the recess may be the same as the roughness of the polished surface.
- the said recessed part is a groove
- the first invention since a cutter that causes roughening of the inner surface of the recess is not used, a fine surface equivalent to or close to the polished surface can be obtained as the inner surface of the recess.
- the object to be polished is hardly caught when polishing using a polishing pad.
- the concave pattern of the polishing pad can be flexibly formed with a high degree of freedom by exchanging the jig.
- the thickness of the polishing layer is gradually decreased from the polishing surface toward the concave portion, and there is no angular irregularity on the surface of the polishing layer. Therefore, when polishing with the polishing pad, The object to be polished is not easily caught. Further, since the profile relating to the thickness of the polishing layer is specific to the method according to the first invention, it is effective whether or not the polishing pad is created by using the method according to the first invention through observation of the profile. Can be judged.
- FIG. 1 is a configuration diagram of a polishing pad processing apparatus.
- This processing apparatus 1 is mainly composed of a work table 2, a suction machine 3, and a grinding machine 4.
- a work frame 2 provided in the work table 2 is fixed with a frame 5 for positioning a disc-shaped polishing pad or the like.
- the work surface 2a is provided with a number of suction holes 2b that penetrate the work table 2 up and down.
- the suction machine 3 is disposed under the work table 2.
- the suction machine 3 communicates with a number of suction holes 2b provided in the work table 2, and sucks the polishing pad held in the table frame 5 from the back surface thereof.
- the grinding machine 4 is disposed above the work table 2 so as to face the work surface 2a, and is movable in a three-dimensional direction by an actuator (not shown).
- the grinding machine 4 includes a rotary roller 4a and a dust suction machine 4b. Diamond powder is fixed to the outer peripheral surface of the roller 4a.
- the object to be ground polishing pad
- the dust suction machine 4b sucks and removes dust generated by grinding with the roller 4a.
- the dust sucked by the dust suction machine 4b is discharged to the outside through a hose 4c attached to the grinding machine 4.
- FIG. 3 is a configuration diagram of the jig 6.
- the jig 6 includes a base member 6a and a protruding portion 6b.
- the base member 6a has a shape (disk shape) corresponding to the surface shape of the polishing pad.
- the base member 6a is formed of a material having air permeability (for example, polyurethane) so as not to hinder the suction of the polishing pad through the suction hole 2b.
- the protruding portion 6b is attached to the base member 6a so as to protrude upward from the surface of the base member 6a.
- the protrusion 6b has a convex shape (convex pattern) corresponding to the shape of the concave portion (concave pattern) to be formed on the surface of the polishing layer provided in the polishing pad.
- the protrusion 6b is formed of an acrylic material as an example.
- the protruding shape of the protruding portion 6b can be freely formed with a high degree of freedom including straight lines, curved lines, and combinations thereof.
- the protruding portion 6b in order to form a turtle shell-shaped concave pattern on the surface of the polishing pad, the protruding portion 6b also has a turtle shell-shaped convex pattern.
- FIG. 4 is a cross-sectional view of the polishing pad 7.
- the polishing pad 7 is mainly composed of a polishing layer 7a, an adhesive layer 7b, and a release sheet 7c in order from the top layer, and is cut (formed) into a disk shape in this embodiment. Further, the polishing pad 7 has a property of bending itself, that is, flexibility.
- the polishing layer 7a is a layer having a function of polishing an object to be polished, which is a central function of the polishing pad 7, and is made of, for example, polyurethane (foamed urethane).
- a double-sided tape can be used as the adhesive layer 7b.
- the lowermost release sheet 7c is peeled to expose the adhesive layer 7b, and then the polishing pad 7 is attached to a predetermined part of the polishing apparatus.
- FIG. 6 is a view showing a state in which the polishing pad 7 is disposed on the work surface 2a via the jig 6. As shown in FIG. When the suction machine 3 is stopped, the polishing pad 7 is lifted by the height of the protrusion 6b, and there is a space between the polishing pad 7 and the base member 6a. Due to the presence of this space, when an external force is applied to the polishing pad 7 in the next step, partial deflection of the polishing pad 7 that is lifted from the work surface 2a is allowed.
- FIG. 7 is an explanatory diagram of a grinding process of the polishing pad 7.
- the suction machine 3 is operated to suck the polishing pad 7 from the back surface through the plurality of suction holes 2b facing the work surface 2a.
- this suction force acting on the polishing pad 7 as an external force a portion of the surface of the polishing pad 7 that is in a state of being lifted by the adjacent protrusions 6b is bent, and the upper surface of the base member 6a disposed below and Contact. That is, the surface of the polishing pad 7 (polishing layer 7a) is depressed only at the part that has been lifted, and as a result, the part supported by the protruding portion 6b is relatively raised.
- the grinding machine 4 set to a predetermined height is moved in parallel with the work surface 2a, and the polishing layer which is the uppermost layer of the polishing pad 7 is formed by the roller 4a.
- the surface of 7a is partially ground, that is, only the raised portion is ground by a predetermined thickness ⁇ (grinding step).
- the following two conditions are required as conditions for preventing the grinding process by the grinding machine 4 from being hindered.
- the height reference is the work surface 2a
- the height H1 of the underframe 5 is lower than the sum of the jig height H2 and the thickness D of the polishing pad 7 (before grinding). is there.
- the partial removal of the polishing layer 7a may be performed by using a slicing process that thinly slices the surface of the grinding layer 7a instead of the grinding process.
- the finishing process of the polishing pad 7 is performed.
- the jig 6 arranged on the work surface 2a is removed, and the polishing pad 7 is rearranged on the work surface 2a.
- the surface of the polishing layer 7a excluding the concave portion 7d is thinly ground by using the same grinding machine 4 as in the grinding step, thereby forming a flat polishing surface as a part of the surface of the polishing layer 7a.
- FIG. 8 is a view showing the polishing pad 7 completed through a series of steps.
- the uppermost polishing surface 7 a has a flat polishing surface 7 d that is a part of the surface, and a recess 7 e that is partially provided on the surface and is recessed from the surface (polishing surface 7 d).
- a shape corresponding to the convex pattern of the jig 6 is transferred as the shape (concave pattern) of the concave portion 7e.
- the surface of the polishing layer 7a has irregularities, but the back surface thereof is flat.
- FIG. 9 is an enlarged cross-sectional photograph of the polishing pad 7.
- A is the maximum thickness (1.402 mm) of the polishing layer 7a
- B is the width of the recess (groove) (3.786 mm)
- C is the depth of the recess 7e (0.246 mm).
- the surface changes gently from the polishing surface 7d toward the recess 7e, and there is no angular portion.
- the inner surface of the recess 7e does not have the roughness as in the case of cutting with a cutter, and is in a fine state equivalent to or close to the roughness of the polishing surface 7d.
- the roughness of the inner surface (side wall surface and bottom surface) of the recess is the same as the roughness of the polished surface.
- FIG. 10 is a characteristic diagram showing a profile of the thickness D of the polishing layer 7a with respect to the length X in the groove width direction.
- the thickness D of the polishing layer 7a is gradually decreased from the polishing surface 7d toward the recess 7e.
- the change rate ⁇ D that is, the inclination of the thickness D gradually increases from the polishing surface 7d toward the side wall surface of the recess 7e, and gradually decreases from the side wall surface of the recess 7d toward the bottom surface thereof. is doing.
- a cutter that causes roughening of the inner surface of the recess 7e of the polishing pad 7 is not used, so that a fine surface equivalent to or close to the polishing surface 7e can be obtained as the inner surface of the recess 7e. Can do. Further, since there are no angular irregularities on the surface of the polishing layer 7a, the object to be polished is not easily caught when polishing by the polishing pad 7 by the user.
- the concave pattern of the polishing pad 7 can be flexibly formed with a high degree of freedom by replacing the jig 6 for transferring the concave pattern to the polishing pad 7 with a different convex pattern. can do.
- the convex pattern may be directly formed on the work surface 2a without using the replaceable jig 6.
- the profile relating to the thickness D of the polishing layer 7a is unique to the processing method according to the present embodiment. It is possible to effectively determine whether the polishing pad is created using the processing method.
- the polishing layer The thickness D changes rapidly.
- the side wall surface of the recess is also vertical and does not have the inclination as shown in FIG. Even if the boundary portion B becomes gentle depending on the shape of the cutting edge of the cutter, the boundary portion A does not become gentle.
- Patent Document 6 listed as the prior art discloses a polishing pad in which the surface of the skin layer region corresponding to the polishing layer is gently connected as shown in FIG. It is similar to the polishing pad 7 according to this embodiment in that there is no unevenness.
- the skin layer region of Patent Document 6 has a constant thickness and does not have a profile as shown in FIG. From the above, it can be said that the profile of FIG. 10 is unique to a processing method in which surface grinding is performed while the polishing layer is bent and deformed.
- the present invention is not limited to this.
- the magnetic force of the magnet 8 may be used.
- a metal mesh or the like is used as the base member 6a, and the magnet 8 is disposed between the adjacent protruding portions 6.
- the polishing pad 7 is bent by the magnetic force generated between the magnet 8 and the base member 6 a, and as a result, a bump corresponding to the convex shape of the jig 6 is generated on the surface of the polishing pad 7.
- a weight may be used and the polishing pad 7 may be bent with its own weight as an external force. Further, the polishing pad 7 may be bent by pressing both ends of the polishing pad 7 against the work surface 2a.
- the polishing layer 7a, the adhesive layer 7b, and the release sheet 7c are laminated and cut (formed) into a disk shape.
- the polishing layer 7a before lamination may be a single body or a sheet body before cutting. From this point of view, the term “polishing pad 7” in the present specification is used in a sense including such a thing widely.
- the polishing layer 7a is ground by moving the grinding machine 4 (roller 4a) with respect to the polishing pad 7 disposed on the work surface 2a
- the present invention is not limited to this, and the polishing pad 7 may be moved with respect to the grinding machine 4.
- the upper surface of the work table 2 may be curved. In this case, the portion of the curved surface of the work table 2 where the polishing layer 7a and the grinding machine 4 are in contact with each other can be regarded as the “work surface 2a”.
- the polishing pad manufactured according to the present invention is widely applied to the use of polishing an object to be polished including a semiconductor wafer cut out from an ingot and an intermediate product generated in the manufacturing process of precision equipment represented by a semiconductor integrated circuit. be able to.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Le problème décrit par la présente invention est de produire un tampon de polissage de qualité élevée qui satisfait à la demande d'un utilisateur concernant des évidements. La solution selon l'invention porte sur un outil (6), qui possède une forme projetée se conformant à la forme d'un évidement à former sur la surface avant d'un tampon de polissage (7), est d'abord disposé sur une surface de travail (2a). Ensuite, le tampon de polissage (7) est disposé sur la surface de travail (2a) sur laquelle l'outil (6) a été disposé. Le tampon de polissage (7) est aspiré à partir de la surface arrière par l'intermédiaire d'un trou d'aspiration (2b), et la surface avant élevée en fonction de la forme projetée de l'outil (6) est partiellement retirée dans le sens de l'épaisseur tout en pliant le tampon de polissage (7) qui est maintenu dans l'état suspendu par la partie projetée de l'outil (6). Ainsi, un évidement est formé dans la surface avant du tampon de polissage (7).
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/004259 WO2018142623A1 (fr) | 2017-02-06 | 2017-02-06 | Procédé de formation d'évidement de tampon de polissage et tampon de polissage |
CN201780048120.0A CN109562506B (zh) | 2017-02-06 | 2017-02-06 | 抛光垫的凹部形成方法以及抛光垫 |
JP2017553193A JP6324637B1 (ja) | 2017-02-06 | 2017-02-06 | ポリッシングバッドの凹部形成方法およびポリッシングパッド |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2017/004259 WO2018142623A1 (fr) | 2017-02-06 | 2017-02-06 | Procédé de formation d'évidement de tampon de polissage et tampon de polissage |
Publications (1)
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WO2018142623A1 true WO2018142623A1 (fr) | 2018-08-09 |
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Family Applications (1)
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PCT/JP2017/004259 WO2018142623A1 (fr) | 2017-02-06 | 2017-02-06 | Procédé de formation d'évidement de tampon de polissage et tampon de polissage |
Country Status (3)
Country | Link |
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JP (1) | JP6324637B1 (fr) |
CN (1) | CN109562506B (fr) |
WO (1) | WO2018142623A1 (fr) |
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CN115805523A (zh) * | 2022-12-29 | 2023-03-17 | 西安奕斯伟材料科技有限公司 | 定盘、抛光设备和抛光方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006346805A (ja) * | 2005-06-15 | 2006-12-28 | Toyo Tire & Rubber Co Ltd | 積層研磨パッド |
JP2009520343A (ja) * | 2005-11-30 | 2009-05-21 | アプライド マテリアルズ インコーポレイテッド | 表面粗さを備えた研磨パッド |
JP2013202775A (ja) * | 2012-03-29 | 2013-10-07 | Fujibo Holdings Inc | 研磨パッド及び研磨パッドの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232470A (en) * | 1990-05-21 | 1993-08-03 | Wiand Ronald C | Flexible one-piece diamond sheet material with spaced apart abrasive portions |
KR100882045B1 (ko) * | 2006-02-15 | 2009-02-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 그루브형 서브패드를 구비한 폴리싱 장치 |
US20140141704A1 (en) * | 2011-07-15 | 2014-05-22 | Toray Industries, Inc. | Polishing pad |
US9522454B2 (en) * | 2012-12-17 | 2016-12-20 | Seagate Technology Llc | Method of patterning a lapping plate, and patterned lapping plates |
US10160092B2 (en) * | 2013-03-14 | 2018-12-25 | Cabot Microelectronics Corporation | Polishing pad having polishing surface with continuous protrusions having tapered sidewalls |
TWI597125B (zh) * | 2014-09-25 | 2017-09-01 | 三芳化學工業股份有限公司 | 拋光墊及其製造方法 |
CN204108814U (zh) * | 2014-09-28 | 2015-01-21 | 中芯国际集成电路制造(北京)有限公司 | 研磨垫 |
-
2017
- 2017-02-06 WO PCT/JP2017/004259 patent/WO2018142623A1/fr active Application Filing
- 2017-02-06 JP JP2017553193A patent/JP6324637B1/ja active Active
- 2017-02-06 CN CN201780048120.0A patent/CN109562506B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006346805A (ja) * | 2005-06-15 | 2006-12-28 | Toyo Tire & Rubber Co Ltd | 積層研磨パッド |
JP2009520343A (ja) * | 2005-11-30 | 2009-05-21 | アプライド マテリアルズ インコーポレイテッド | 表面粗さを備えた研磨パッド |
JP2013202775A (ja) * | 2012-03-29 | 2013-10-07 | Fujibo Holdings Inc | 研磨パッド及び研磨パッドの製造方法 |
Also Published As
Publication number | Publication date |
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JP6324637B1 (ja) | 2018-05-16 |
CN109562506B (zh) | 2021-11-12 |
CN109562506A (zh) | 2019-04-02 |
JPWO2018142623A1 (ja) | 2019-02-07 |
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