WO2018037982A1

WO2018037982A1 - Substrate processing device and substrate processing method

Info

Publication number: WO2018037982A1
Application number: PCT/JP2017/029466
Authority: WO
Inventors: 昌之林; 敬次岩田
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2016-08-24
Filing date: 2017-08-16
Publication date: 2018-03-01
Also published as: TWI661467B; KR102208292B1; TW201937552A; CN109564862A; KR102262348B1; KR20190021418A; CN109564862B; JP6817748B2; TW201816841A; JP2018032728A; TWI728346B; KR20210010641A

Abstract

A substrate processing device comprises: a rotating unit which rotates a substrate being held on a substrate holding unit accommodated in a chamber about a vertical rotating axis; a nozzle which includes an ejection opening and which ejects, toward a main surface of the substrate being held on the rotating unit, a liquid via the ejection opening; a first chemical liquid supply unit for supplying a first chemical liquid to the nozzle; a processing cup which includes a plurality of tubular guards including a tubular first guard surrounding the substrate holding unit, and a tubular second guard surrounding the first guard, and which accommodates the substrate holding unit; a raising/lowering unit for raising/lowering at least one guard among the plurality of guards; and a control device which controls the rotating unit, the first chemical liquid supply unit, and the raising/lowering unit. The control device executes: an upper position arranging step of arranging at least one guard among the plurality of guards at an upper position which is a predetermined upper position that is set above a predetermined liquid reception position at which the first chemical liquid flying off the substrate being rotated by the rotating unit can be received by the guard, the upper position enabling the liquid flying off the substrate to be received by the guard; and a first chemical liquid supplying step of supplying the first chemical liquid to the main surface of the substrate while the substrate is being rotated by the rotating unit, with the guard arranged at the upper position.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a chemical solution. Examples of the substrate include a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an FED (Field 基板 EmissionＦDisplay) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, Ceramic substrates, solar cell substrates and the like are included.

In the manufacturing process of a semiconductor device liquid crystal display device, a single wafer processing apparatus for processing substrates one by one may be used to perform processing with a chemical on the surface of a substrate such as a semiconductor substrate. This single-wafer type substrate processing apparatus includes, for example, a spin chuck that rotates while holding the substrate substantially horizontal in a chamber, a nozzle for supplying a chemical to the substrate rotated by the spin chuck, and a substrate. It includes a processing cup for receiving and draining the scattered processing liquid, and a disc-shaped blocking plate disposed to face the surface (upper surface) of the substrate held by the spin chuck.

The processing cup has, for example, a substantially cylindrical shape with the rotation axis of the substrate by the spin chuck as the central axis, and an opening (upper opening) is provided at the upper end thereof. The processing cup includes a cup accommodated in a fixed manner and a guard that can be moved up and down with respect to the cup and that can catch a chemical liquid scattered from a substrate rotated by a spin chuck. Usually, at the time of liquid processing of the substrate, at least the height position of the outermost guard is set to a predetermined liquid receiving position where the chemical liquid splashing from the substrate can be received by the guard.

In this state, while the substrate is rotated by the spin chuck, the chemical solution is supplied to the surface of the substrate by supplying the chemical solution from the nozzle to the surface of the substrate. The chemical solution supplied to the surface of the substrate receives a centrifugal force due to the rotation of the substrate and scatters laterally from the peripheral edge of the substrate. And the chemical | medical solution which scattered to the side is received by the guard, is supplied to a cup along the inner wall of a guard, and is drained after that.

JP-A-9-97757

However, when the height of the liquid receiving position of the guard is high enough to achieve the purpose of catching the chemical liquid splashing from the substrate, the processing cup is Even if the inside is evacuated by the exhaust mechanism, the atmosphere containing the chemical mist or the like inside the processing cup may flow out of the processing cup through the upper opening of the processing cup and diffuse into the chamber. . The atmosphere containing chemical mist, etc. becomes particles and adheres to the substrate, contaminating the substrate, and contaminating the inner wall of the chamber. Or it is desirable to prevent.

Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing the diffusion of the atmosphere containing the chemical solution supplied to the main surface of the substrate to the surroundings.

The present invention includes a chamber, a substrate holding unit that is accommodated in the chamber and holds the substrate in a horizontal posture, a rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis, A nozzle for discharging liquid from the discharge port toward the main surface of the substrate that has a discharge port and is held by the rotating unit, and a first for supplying a first chemical to the nozzle A plurality of cylindrical guards including a chemical solution supply unit, a cylindrical first guard surrounding the periphery of the substrate holding unit, and a cylindrical second guard surrounding the periphery of the first guard; A processing cup for accommodating the substrate holding unit; an elevating unit for elevating and lowering at least one of the plurality of guards; the rotating unit; and the first chemical solution supply unit. And a control device for controlling the lifting unit, wherein the control device is configured to remove at least one of the plurality of guards from a substrate at a predetermined upper position and rotated by the rotating unit. An upper position arrangement that is set above a predetermined liquid receiving position where the first chemical liquid to be scattered can be received by the guard, and is arranged at an upper position where the liquid scattered from the substrate can be received by the guard. Executing a step and a first chemical supply step of supplying a first chemical to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position. A processing device is provided.

According to this configuration, the first chemical liquid is disposed on the main surface of the substrate in the rotating state in a state where at least one of the plurality of guards is disposed at the upper position set higher than the liquid receiving position. Is supplied. In a state where at least one of the plurality of guards is disposed at the upper position, a large distance is ensured between the upper opening of the processing cup and the substrate. In the first chemical solution supply step, mist of the chemical solution is generated by supplying the first chemical solution to the substrate. However, since the distance between the upper opening of the processing cup and the substrate is ensured, the chemical solution It is difficult for the atmosphere containing the mist to flow out of the processing cup through the upper opening of the processing cup. Thereby, the substrate processing apparatus which can suppress the spreading | diffusion to the circumference | surroundings of the atmosphere containing the 1st chemical | medical solution supplied to the main surface of a board | substrate can be provided.

In one embodiment of the present invention, there is provided a facing member that has a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit, and is disposed above the guard, It further includes an opposing member that forms an annular gap with the upper end of the guard in a state where the guard is disposed at the upper position.

According to this configuration, in order for the atmosphere inside the processing cup to flow out into the chamber, the atmosphere in the processing cup not only flows out of the processing cup through the upper opening, but is further arranged at the upper position. It is necessary to reach the inside of the chamber through an annular gap between the upper end of the guard in the state of being placed and the substrate facing surface. In this case, by setting the upper position of the guard so that the annular gap is narrowed, the amount of atmosphere flowing out into the chamber through the annular gap can be effectively suppressed or prevented.

The apparatus holds the nozzle and moves around the predetermined swing axis set outside the rotation range of the substrate so as to move the nozzle along the main surface of the substrate held by the substrate holding unit. It may further include a nozzle arm provided to be swingable. In this case, the annular gap may be set larger than the vertical width of the nozzle arm so that the nozzle arm can straddle the inside and outside of the rotation range.

According to this configuration, by setting the annular gap to such a size, the nozzle arm can be straddled inside and outside the rotation range while passing through the annular gap. Then, by making the annular gap as small as possible, the annular gap can be set to a minimum size within a range that allows passage of the nozzle arm. In this case, the amount of atmosphere flowing out from the inside of the processing cup to the inside of the chamber can be effectively reduced. Thereby, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed much more effectively.

The substrate processing apparatus holds the nozzle, and moves the nozzle along a main surface of the substrate held by the substrate holding unit. It may further include a nozzle arm provided so as to be swingable around the movement axis. In this case, the first position between the upper end of the guard and the lower end of the nozzle arm in a state where the upper position is located is between the lower end of the nozzle arm and the discharge port. The position may be narrower than the second interval.

According to this configuration, by setting the magnitude relationship between the first interval and the second interval in this way, it is possible to effectively reduce the amount of atmosphere flowing out from the processing cup into the chamber. Thereby, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed much more effectively.

In the upper position, the upper end of the guard in the upper position is higher than the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit. The position may be a position.

According to this configuration, the amount of the atmosphere flowing out from the processing cup into the chamber can be effectively reduced by setting the upper position to the position as described above. Thereby, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed much more effectively.

The apparatus may further include a second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the main surface of the substrate. In this case, the control device further controls the second chemical solution supply unit, and the control device lowers the upper end of the first guard from the substrate held by the substrate holding unit. And a step of disposing the second guard at the liquid receiving position, the first guard is disposed at the lower position, and the second guard is disposed at the liquid receiving position. And a second chemical supply step for supplying a second chemical to the main surface of the substrate while rotating the substrate by the rotating unit.

According to this configuration, the second chemical liquid supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical solution supply step, the second chemical solution scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

The control device may execute the step of arranging the first and second guards at the upper position as the upper position arranging step.

According to this configuration, the first chemical solution supply step is executed in a state where the first and second guards are arranged at the upper position. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be satisfactorily received by the first guard while arranging the first guard as high as possible. Thereby, in the 1st chemical | medical solution supply process, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed more effectively.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The control device includes the step of disposing the first and second guards at the liquid receiving position, and the rotating unit by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position. You may further perform the water supply process which supplies water to the main surface of the said board | substrate, rotating a board | substrate.

According to this configuration, the water supply step is executed in a state where the first and second guards are arranged at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be received well by the first guard at the liquid receiving position.

In the water supply process, since there is almost no chemical mist around the main surface of the substrate, even if the first guard is located at the liquid receiving position, there is almost no chemical mist flowing out of the processing cup into the chamber. Absent.

The control device may execute a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position as the upper position arranging step.

According to this configuration, the first chemical liquid supply step is executed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. By disposing the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical solution supply step, the first chemical solution scattered from the substrate is received by the first guard at the liquid receiving position, and the outflow of the atmosphere containing the mist of the first chemical solution to the outside of the processing cup is prevented. Can be suppressed. Thereby, in the 1st chemical | medical solution supply process, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed more effectively.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The control device arranges the first guard at a lower position where an upper end of the first guard is located below the substrate held by the substrate holding unit, and arranges the second guard at the liquid receiving position. And a main unit of the substrate while rotating the substrate by the rotating unit in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. You may further perform the water supply process which supplies water to a surface.

According to this configuration, the water supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the water supply process, the water scattered from the substrate can be received well by the second guard at the liquid receiving position. *

In the first chemical supply process, the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. Therefore, after the first chemical supply process, the first guard and the second guard are disposed. There is a possibility that the mist of the first chemical solution is attached to the wall of the internal space partitioned between the two guards. However, in the water supply step, the water can be supplied to the internal space defined between the first guard and the second guard. Therefore, even if the mist of the 1st chemical | medical solution has adhered to the wall of the internal space divided between the 1st guard and the 2nd guard, the said 1st chemical | medical solution is performed by execution of a water supply process. The mist can be washed away with water.

The control device executes the water supply step before and / or after the execution of the first chemical solution supply step and / or before and / or after the execution of the second chemical solution supply step. Also good.

According to this configuration, the first and second chemical liquid supply steps using different types of chemical liquids are performed in a common chamber. Further, the water supply process is executed before and / or after the first chemical liquid supply process and / or before and / or after the second chemical liquid supply process.

After the end of the first chemical solution supply process and / or before the start of the second chemical solution supply process, the mist of the first chemical solution is formed on the wall of the internal space defined between the first guard and the second guard. May adhere. In this case, water can be supplied to the internal space by performing the water supply step after the end of the first chemical solution supply step and / or before the start of the second chemical solution supply step. The mist of the 1st chemical | medical solution adhering to the wall can be washed away. Therefore, at the start of the second chemical liquid supply process, no mist of the first chemical liquid remains on the wall of the internal space. Therefore, even if the second chemical liquid enters the internal space in the second chemical liquid supply step, the second chemical liquid does not come into contact with the first chemical liquid. Thereby, the contact with the 1st chemical | medical solution and the 2nd chemical | medical solution in the inside of internal space can be prevented.

The apparatus may include a partition plate that vertically divides a side region of the substrate holding unit into an upper space on the upper side and a lower space on the lower side in the chamber. In this case, an exhaust port is opened in the lower space, and a gap may be formed between the second guard and the partition plate. The second guard may have a closing portion for closing the gap. Further, in a state where the second guard is disposed at the upper position, the closing portion closes the gap, and the second guard is set below the upper position. The said clearance gap may be formed in the state arrange | positioned in the position.

According to this configuration, when the gap is open, the airflow flowing inside the chamber flows both inside and below the processing cup. On the other hand, when the gap is closed, the airflow flowing inside the chamber does not flow into the lower space but collects inside the processing cup.

When the first chemical solution supply process is executed in a state where the second guard is in the upper position, in the first chemical solution supply process, an air flow from the inside of the chamber to the inside of the processing cup can be formed. Thereby, the outflow of the atmosphere containing the chemical mist from the processing cup to the inside of the chamber can be more effectively suppressed.

Further, the first chemical solution may include a mixed solution of sulfuric acid and hydrogen peroxide solution.

The present invention includes a chamber, a substrate holding unit that is accommodated in the chamber and holds the substrate in a horizontal posture, a rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis, Substrate processing performed in a substrate processing apparatus including a cylindrical first guard surrounding the periphery of the substrate holding unit and a plurality of guards including a cylindrical second guard surrounding the periphery of the first guard A substrate holding step of holding the substrate by the substrate holding unit; and at least one of the plurality of guards is scattered from the substrate at a predetermined upper position and rotated by the rotating unit. Liquid that is set above a predetermined liquid receiving position where the liquid to be received can be received by the guard and splashes from the substrate An upper position arranging step for arranging the first position on the main surface of the substrate while rotating the substrate by the rotating unit in a state in which the guard is disposed at the upper position. There is provided a substrate processing method including a first chemical supply step for supplying a chemical.

According to this method, the substrate is rotated and at least one of the plurality of guards is disposed at the upper position set above the liquid receiving position, and the first surface is provided on the main surface of the substrate. The chemical solution is supplied. In a state where at least one of the plurality of guards is disposed at the upper position, a large distance is ensured between the upper opening of the processing cup and the substrate. In the first chemical solution supply step, mist of the chemical solution is generated by supplying the first chemical solution to the substrate. However, since the distance between the upper opening of the processing cup and the substrate is ensured, the chemical solution It is difficult for the atmosphere containing the mist to flow out of the processing cup through the upper opening of the processing cup. Thereby, the substrate processing method which can suppress the spreading | diffusion to the circumference | surroundings of the atmosphere containing the 1st chemical | medical solution supplied to the main surface of a board | substrate can be provided.

In one embodiment of the present invention, in the method, the first guard is disposed at a lower position where an upper end of the first guard is positioned lower than a substrate held by the substrate holding unit, and the second guard is disposed. In the liquid receiving position, and in the state where the first guard is arranged at the lower position and the second guard is arranged at the liquid receiving position, the substrate is moved by the rotating unit. A second chemical solution supply step of supplying a second chemical solution to the main surface of the substrate while rotating.

According to this method, the second chemical liquid supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical solution supply step, the second chemical solution scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

The upper position arranging step may include a step of arranging the first and second guards at the upper position.

According to this method, the first chemical solution supply step is executed in a state where the first and second guards are arranged at the upper position. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be satisfactorily received by the first guard while arranging the first guard as high as possible. Thereby, in the 1st chemical | medical solution supply process, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed more effectively.

The method includes the steps of disposing the first and second guards at the liquid receiving position, and the substrate by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position. A water supply step of supplying water to the main surface of the substrate while rotating the substrate.

According to this method, the water supply step is executed in a state where the first and second guards are arranged at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be received well by the first guard at the liquid receiving position.

The upper position arranging step may include a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position.

According to this method, the first chemical liquid supply step is executed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. By disposing the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical solution supply step, the first chemical solution scattered from the substrate is received by the first guard at the liquid receiving position, and the outflow of the atmosphere containing the mist of the first chemical solution to the outside of the processing cup is prevented. Can be suppressed. Thereby, in the 1st chemical | medical solution supply process, the spreading | diffusion to the circumference | surroundings of the atmosphere containing a 1st chemical | medical solution can be suppressed more effectively.

The method includes the steps of disposing the first and second guards at the liquid receiving position, and lowering the upper end of the first guard below the substrate held by the substrate holding unit. Disposing the second guard at the liquid receiving position, the first guard disposed at the lower position, and the second guard disposed at the liquid receiving position. And a water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit.

According to this method, the water supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the water supply process, the water scattered from the substrate can be received well by the second guard at the liquid receiving position. *

The water supply step may be executed before and / or after the execution of the first chemical solution supply step and / or before and / or after the execution of the second chemical solution supply step.

According to this method, the first and second chemical liquid supply steps using different types of chemical liquids are performed in a common chamber. Further, the water supply process is executed before and / or after the first chemical liquid supply process and / or before and / or after the second chemical liquid supply process.

The above-described or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2A is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 2B is a diagram for specifically explaining a configuration around a counter member included in the processing unit. FIG. 3A is an illustrative view for describing the flow of airflow inside the chamber in a state where the second guard shown in FIG. 2A is in the lower position. FIG. 3B is an illustrative view for explaining the flow of airflow inside the chamber in a state where the second guard is in the liquid receiving position. FIG. 3C is an illustrative view for explaining the flow of airflow inside the chamber in a state where the second guard is in the upper position. FIG. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. FIG. 5 is a flowchart for explaining a first substrate processing example by the processing unit. 6A-6B are schematic diagrams for explaining the first substrate processing example. FIG. 6C-6D are schematic diagrams for explaining the process subsequent to FIG. 6B. FIG. 6E is an illustrative view for describing a step following FIG. 6D. FIG. 7 is an illustrative sectional view showing an enlarged configuration example of the lower part of the processing unit. 8A-8B are illustrative views for explaining a second substrate processing example by the processing unit. FIG. 8C is an illustrative view for explaining a second substrate processing example by the processing unit.

FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid, a load port LP on which a carrier C that houses a plurality of substrates W processed by the processing unit 2 is placed, a load port It includes transfer robots IR and CR that transfer the substrate W between the LP and the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.

FIG. 2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

The processing unit 2 includes a box-shaped chamber 4 and a spin chuck that holds a single substrate W in the chamber 4 in a horizontal posture and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W. (Substrate holding unit) 5, an opposing member 7 having a substrate facing surface 6 facing the upper surface (main surface) of the substrate W held by the spin chuck 5, and a substrate W held by the spin chuck 5, SPM supply unit (first chemical supply unit) 8 for supplying a sulfuric acid / hydrogen peroxide / mixture (SPM) as a first chemical solution and a spin chuck 5 Organic for supplying an isopropyl alcohol (IPA) liquid as an example of an organic solvent (an organic solvent having a low surface tension) as the second chemical liquid to the surface (upper surface) of the substrate W An agent supply unit (second chemical supply unit) 10, a water supply unit 11 for supplying water as a rinsing liquid to the surface (upper surface) of the substrate W held by the spin chuck 5, and the spin chuck 5 And a cylindrical processing cup 12 surrounding the container.

The chamber 4 includes a box-shaped partition wall 13 that accommodates the spin chuck 5 and the nozzles, and an FFU (fan filter filter) as a blower unit that sends clean air (air filtered by a filter) into the partition wall 13 from above the partition wall 13. Unit) 14 and a partition plate 16 that vertically divides the side region 15 of the processing cup 12 in the chamber 4 into an upper region 15a and a lower region 15b.

The FFU 14 is disposed above the partition wall 13 and attached to the ceiling of the partition wall 13. The control device 3 controls the FFU 14 so that the FFU 14 sends clean air downward from the ceiling of the partition wall 13 into the chamber 4.

An exhaust port 9 is opened at the bottom or bottom of the partition wall 13. An exhaust duct 9 a is connected to the exhaust port 9. The exhaust device sucks the atmosphere of the lower space 4a inside the chamber 4 (the space below the partition plate 16 in the vertical direction in the internal space of the chamber 4) and exhausts the lower space 4a.

While the FFU 14 supplies clean air to the inside of the chamber 4, the exhaust device exhausts the lower space 4 a of the chamber 4, whereby a downflow (downflow) is formed in the chamber 4. The processing of the substrate W is performed in a state where a down flow is formed in the chamber 4.

The partition plate 16 is disposed between the outer wall of the processing cup 12 and the partition wall 13 (side partition wall) of the chamber 4. The inner end portion of the partition plate 16 is disposed along the outer peripheral surface of the outer wall of the processing cup 12. The outer end portion of the partition plate 16 is disposed along the inner surface of the partition wall 13 (side partition wall) of the chamber 4. An SPM nozzle 28 and a nozzle arm 29 described later are disposed above the partition plate 16. The partition plate 16 may be a single plate or a plurality of plates disposed at the same height. The upper surface of the partition plate 16 may be horizontal or may extend obliquely upward toward the rotation axis A1.

As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed. Specifically, the spin chuck 5 is mounted substantially horizontally on a spin motor (rotary unit) 17, a lower spin shaft 18 integrated with a drive shaft of the spin motor 17, and an upper end of the lower spin shaft 18. Disc-shaped spin base 19. The spin base 19 has an upper surface 19a made of a flat surface.

On the upper surface 19a of the spin base 19, a plurality of (three or more, for example, six) clamping members 20 are arranged on the peripheral edge thereof. The plurality of clamping members 20 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 19.

Further, the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held on the spin chuck 5 may be employed.

The facing member 7 includes a blocking plate 21 and an upper spin shaft 22 provided coaxially with the blocking plate 21. The blocking plate 21 has a disc shape having a diameter substantially equal to or larger than that of the substrate W. The substrate facing surface 6 forms a lower surface of the blocking plate 21 and has a circular shape facing the entire upper surface of the substrate W.

A cylindrical through hole 23 (see FIG. 2B) penetrating the blocking plate 21 and the upper spin shaft 22 up and down is formed at the center of the substrate facing surface 6. The inner peripheral wall of the through hole 23 is partitioned by a cylindrical surface. A first nozzle 24 and a second nozzle 25 extending vertically are inserted through the through hole 23.

The upper spin shaft 22 is coupled with a blocking plate rotating unit 26. The shielding plate rotating unit 26 rotates the upper spin shaft 22 around the rotational axis A2 together with the shielding plate 21. A shield plate lifting / lowering unit 27 having a configuration including an electric motor, a ball screw, and the like is coupled to the shield plate 21. The blocking plate lifting / lowering unit 27 moves the blocking plate 21 in the vertical direction together with the first and

second nozzles

24 and 25. The shield plate lifting / lowering unit 27 includes a proximity position (see FIG. 6D and the like) in which the substrate facing surface 6 of the shield plate 21 is close to the upper surface of the substrate W held by the spin chuck 5 and a retreat provided above the proximity position. The blocking plate 21 and the first and

second nozzles

24, 25 are moved up and down between positions (see FIG. 2A, FIG. 6A, etc.). The shield plate lifting / lowering unit 27 can hold the shield plate 21 at each position between the proximity position and the retracted position.

The SPM supply unit 8 includes an SPM nozzle (nozzle) 28, a nozzle arm 29 to which the SPM nozzle 28 is attached at the tip, an SPM pipe 30 connected to the SPM nozzle 28, and an SPM interposed in the SPM pipe 30. The valve 31 includes a nozzle moving unit 32 that is connected to the nozzle arm 29 and moves the SPM nozzle 28 by swinging the nozzle arm 29 around the swing axis A3. The nozzle moving unit 32 includes a motor and the like.

The SPM nozzle 28 is, for example, a straight nozzle that discharges liquid in a continuous flow state. In this embodiment, the discharge port 28a is formed in the outer peripheral surface of the body of the SPM nozzle 28, and SPM is discharged from the discharge port 28a sideways. However, instead of this configuration, a configuration may be employed in which a discharge port is formed at the lower end of the body of the SPM nozzle 28 and SPM is discharged downward from the discharge port 28a.

The SPM pipe 30 is supplied with a sulfuric acid hydrogen peroxide solution mixture (sulfuric acid / hydrogen peroxide mixture: SPM) from a sulfuric acid hydrogen peroxide supply source. In this embodiment, the SPM supplied to the SPM pipe 30 is at a high temperature (eg, about 170 ° C. to about 180 ° C.). The SPM that has been heated to the high temperature by the heat of reaction between sulfuric acid and hydrogen peroxide is supplied to the SPM pipe 30.

When the SPM valve 31 is opened, the high-temperature SPM supplied from the SPM pipe 30 to the SPM nozzle 28 is discharged from the discharge port 28a of the SPM nozzle 28. When the SPM valve 31 is closed, high temperature SPM discharge from the SPM nozzle 28 is stopped. The nozzle moving unit 32 is located between the processing position where the high temperature SPM discharged from the SPM nozzle 28 is supplied to the upper surface of the substrate W and the retreat position where the SPM nozzle 28 retreats to the side of the spin chuck 5 in plan view. Then, the SPM nozzle 28 is moved.

FIG. 2B is a diagram for specifically explaining the configuration around the opposing member 7 included in the processing unit 2.

A central axis nozzle 33 extending vertically extends through the through hole 23. The central shaft nozzle 33 includes first and

second nozzles

24 and 25 and a cylindrical casing 34 surrounding the first and

second nozzles

24 and 25.

A first discharge port 35 for discharging a liquid downward is formed at the lower end of the first nozzle 24. A second discharge port 36 for discharging the liquid downward is formed at the lower end of the second nozzle 25. In this embodiment, each of the first and

second nozzles

24 and 25 is an inner tube. The casing 34 extends in the vertical direction along the rotation axis A2. The casing 34 is inserted into the through hole 23 in a non-contact state. Therefore, the inner periphery of the shielding plate 21 surrounds the outer periphery of the casing 34 with a gap in the radial direction.

The organic solvent supply unit 10 is connected to the first nozzle 24, the organic solvent pipe 37 connected to the first nozzle 24, and the inside communicating with the first discharge port 35, and the organic solvent pipe 37. A first organic solvent valve 38 that opens and closes the solvent and a second organic solvent valve 39 that is interposed in the organic solvent pipe 37 on the downstream side of the first organic solvent valve 38 and opens and closes the organic solvent are included.

At the branch position 40 set between the first organic solvent valve 38 and the second organic solvent valve 39 in the organic solvent pipe 37, there is a suction pipe 41 having a suction device (not shown) connected to the tip thereof. Branch connected. The suction pipe 41 is provided with a suction valve 42 for opening and closing the suction pipe 41.

When the first organic solvent valve 38 is opened, the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 39. When the second organic solvent valve 39 is opened in this state, the organic solvent supplied to the second organic solvent valve 39 is discharged from the first discharge port 35 toward the center of the upper surface of the substrate W.

When the suction valve 42 is opened while the first organic solvent valve 38 is closed and the second organic solvent valve 39 is opened in the operating state of the suction device, the function of the suction device is activated, and the organic solvent The inside of the downstream portion 43 (hereinafter referred to as “organic solvent downstream portion 43”) downstream of the branch position 40 in the pipe 37 is exhausted, and the organic solvent contained in the organic solvent downstream portion 43 passes to the suction pipe 41. And drawn. The suction device and suction valve 42 are included in the suction unit 44.

The water supply unit 11 is connected to the second nozzle 25, the water nozzle 46 connected to the second nozzle 25, and the inside communicating with the second outlet 36. And a water valve 47 for switching supply and stop of water supply to the second nozzle 25. When the water valve 47 is opened, water from the water supply source is supplied to the water pipe 46 and discharged from the second discharge port 36 toward the center of the upper surface of the substrate W. The water supplied to the water pipe 46 is, for example, carbonated water, but is not limited to carbonated water, and is not limited to deionized water (DIW), electrolytic ion water, hydrogen water, ozone water, and diluted concentration (for example, about 10 ppm to 100 ppm). Any of aqueous hydrochloric acid may be used.

The processing unit 2 is further interposed in an inert gas pipe 48 that supplies an inert gas to a cylindrical space between the outer periphery of the casing 34 and the inner periphery of the blocking plate 21, and the inert gas pipe 48. And an inert gas valve 49. When the inert gas valve 49 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 34 and the inner periphery of the blocking plate 21 and is discharged downward from the center of the lower surface of the blocking plate 21. Is done. Accordingly, when the inert gas valve 49 is opened in a state where the shielding plate 21 is disposed in the proximity position, the inert gas discharged from the center of the lower surface of the shielding plate 21 and the substrate of the shielding plate 21 are discharged. The space between the opposing surfaces 6 spreads outward (in the direction away from the rotation axis A1), and the air between the substrate W and the shielding plate 21 is replaced with an inert gas. The inert gas flowing through the inert gas pipe 48 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, but may be other inert gas such as helium gas or argon gas.

As shown in FIG. 2A, the processing cup 12 includes a plurality of cups (first and second cups 51 and 52) fixedly disposed so as to surround the spin chuck 5 in a double manner, and a periphery of the substrate W. A plurality of guards (first and second guards 53 and 54) for receiving the scattered processing liquid (SPM, organic solvent or water), and a guard lifting / lowering unit (lifting / lowering unit) 55 for lifting and lowering each guard independently. Including. The guard elevating unit 55 is configured to include a ball screw mechanism, for example.

The processing cup 12 can be accommodated so as to overlap in the vertical direction, and the guard elevating unit 55 moves up and down at least one of the first and

second guards

53, 54, so that the processing cup 12 is expanded and folded. Is called.

The first cup 51 has an annular shape and surrounds the spin chuck 5 between the spin chuck 5 and the cylindrical member 50. The first cup 51 has a substantially rotationally symmetric shape with respect to the rotation axis A1 of the substrate W. The first cup 51 has a U-shaped cross section and defines a first drainage groove 59 for draining the processing liquid used for processing the substrate W. A first drainage port (not shown) is opened at the lowest portion of the bottom of the first drainage groove 59, and a first drainage pipe 61 is connected to the first drainage port. Has been. The treatment liquid drained through the first drain pipe 61 is sent to a predetermined recovery device or disposal device and processed by the device. *

The second cup 52 has an annular shape and surrounds the first cup 51. The second cup 52 has a shape that is substantially rotationally symmetric with respect to the rotation axis A 1 of the substrate W. The second cup 52 has a U-shaped cross section, and defines a second drainage groove 62 for collecting and collecting the processing liquid used for processing the substrate W. A second drainage port (not shown) is opened at the lowest portion of the bottom of the second drainage groove 62, and a second drainage pipe 64 is connected to the second drainage port. Has been. The processing liquid drained through the second drainage pipe 64 is sent to a predetermined recovery device or disposal device and processed by the device.

The inner first guard 53 surrounds the periphery of the spin chuck 5 and has a substantially rotationally symmetric shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 5. The first guard 53 is integrally provided with a cylindrical guide portion 66 surrounding the spin chuck 5 and a cylindrical processing liquid separation wall 67 connected to the guide portion 66. The guide portion 66 includes a cylindrical lower end 68 that surrounds the periphery of the spin chuck 5, a cylindrical thick portion 69 that extends outward from the upper end of the lower end 68 (in a direction away from the rotation axis A1 of the substrate W), A cylindrical middle step 70 extending vertically upward from the outer peripheral portion of the upper surface of the thick portion 69, and an annular shape extending obliquely upward from the upper end of the middle step 70 inward (in the direction approaching the rotation axis A1 of the substrate W). And an upper end 71.

The treatment liquid separation wall 67 extends vertically downward from the outer peripheral part of the thick part 69 and is located on the second drainage groove 62. The lower end 68 of the guide portion 66 is positioned on the first drainage groove 59, and the first guard 53 and the first cup 51 are closest to each other in the first drainage groove 59. Housed inside. The inner peripheral end of the upper end portion 71 of the guide portion 66 has a circular shape with a larger diameter than the substrate W held by the spin chuck 5 in plan view. Further, the upper end portion 71 of the guide portion 66 may have a straight cross-sectional shape as shown in FIG. 2A or the like, or may extend while drawing a smooth arc, for example.

The outer second guard 54 surrounds the periphery of the spin chuck 5 outside the first guard 53 and has a substantially rotationally symmetric shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 5. The second guard 54 includes a cylindrical portion 72 that is coaxial with the first guard 53, an upper end portion 73 that extends obliquely upward from the upper end of the cylindrical portion 72 toward the center side (a direction approaching the rotation axis A1 of the substrate W), and a cylindrical portion. For example, the lower end portion of 72 has an annular protrusion (blocking portion) 75 protruding outward. The inner peripheral end of the upper end portion 73 has a circular shape with a larger diameter than the substrate W held by the spin chuck 5 in plan view. The upper end portion 73 may have a straight cross-sectional shape as shown in FIG. 2A or the like, or may extend, for example, while drawing a smooth arc. The tip of the upper end 73 defines an upper opening 12a (see FIG. 2A) of the processing cup 12.

The cylindrical portion 72 is located on the second drainage groove 62. The upper end portion 73 is provided so as to overlap the upper end portion 71 of the guide portion 66 of the first guard 53 in the vertical direction, and the first guard 53 and the second guard 54 are closest to each other in the guide. It is formed so as to be close to the upper end 71 of the portion 66 with a minute gap. The folded portion 74 is formed to overlap the upper end portion 71 of the guide portion 66 in the horizontal direction in a state where the first guard 53 and the second guard 54 are closest to each other. The protrusion 75 has an annular upper surface formed of a flat horizontal surface.

The guard lifting / lowering unit 55 lifts and lowers each guard between an upper position P1 (see FIG. 3B and the like) described below and a lower position P3 (see FIG. 3C and the like) where the upper end of the guard is positioned below the substrate W. Let

The upper position P1 of the first and

second guards

53 and 54 is a height position set above a liquid receiving position P2 (see FIG. 3A and the like) described below. The upper position P1 of each guard (first and second guards 53, 54) is the size of an annular gap 86 (see FIG. 6B) formed between the upper end of the guard and the facing member 7 (substrate facing surface 6). This is the position where the vertical width is larger than the vertical width W1 of the nozzle arm 29.

From another viewpoint, the upper position P1 of each guard is a position below the lower end surface 29a of the nozzle arm 29 and above the discharge port 28a. More specifically, the upper position P1 of each guard indicates that the first interval 87 (see FIG. 6B) between the upper end of the guard and the lower end surface 29a of the nozzle arm 29 (lower end of the nozzle arm 29) is the nozzle arm. 29 is a position that is equal to or narrower than the second interval 88 (see FIGS. 6A and 6B) 88 between the lower end surface 29a of the SPM 29 and the discharge port 28a of the SPM nozzle 28. . More specifically, the upper position P1 of each guard is such that the upper end of the guard is an intermediate position M between the lower end surface 29a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5 (see FIG. 3B). ) Above.

The guard lifting / lowering unit 55 can hold the first and

second guards

53 and 54 at an arbitrary position between the upper position P1 and the lower position P3. Specifically, the guard lifting / lowering unit 55 sets the first and

second guards

53 and 54 to liquids set between the upper position P1, the lower position P3, and the upper position P1 and the lower position P3, respectively. It is held at the receiving position P2. The liquid receiving position P2 of the first and

second guards

53 and 54 is a height position at which the upper end of the guard is located above the substrate W. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the guards (first and second guards 53 and 54) faces the peripheral end surface of the substrate W.

3A to 3C are schematic diagrams for explaining the height positions of the first and

second guards

53 and 54 and the flow of the airflow in the chamber 4. FIG. 3A shows a state in which the second guard 54 is disposed at the liquid receiving position P2. FIG. 3B shows a state in which the second guard 54 is disposed at the upper position P1. FIG. 3C shows a state where the second guard 54 is disposed at the lower position P3.

There are the following two methods as a method of making the inner first guard 53 face the peripheral end surface of the substrate W.

First, as shown by a solid line in FIG. 3B, the first and

second guards

53 and 54 are both arranged at the upper position P1. Such a state of the processing cup 12 is hereinafter referred to as a “first upper position state”. Further, in the first upper position state, the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first and

second guards

53 and 54 overlap at a narrow interval. .

Second, as shown by a solid line in FIG. 3A, both the first and

second guards

53 and 54 are arranged at the liquid receiving position P2. Such a state of the processing cup 12 is hereinafter referred to as a “first liquid receiving position state”. Further, in the first liquid receiving position state, the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first and

second guards

53 and 54 overlap each other with a narrow interval. Yes.

Further, there are the following two methods as a method of making the outer second guard 54 face the peripheral end surface of the substrate W.

The first is a technique in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the upper position P1, as indicated by a two-dot chain line in FIG. 3B. Such a state of the processing cup 12 is hereinafter referred to as a “second upper position state”.

The second is a technique in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the liquid receiving position P2, as indicated by a two-dot chain line in FIG. 3A. Such a state of the processing cup 12 is hereinafter referred to as a “second liquid receiving position state”. In the second liquid receiving position state, the distance between the first and

second guards

53 and 54 is wide vertically.

Further, as shown in FIG. 3C, the processing cup 12 can be configured such that none of the guards (first and second guards 53 and 54) is opposed to the peripheral end surface of the substrate W. In this state, both the first and

second guards

53 and 54 are disposed at the lower position P3. Such a state of the processing cup 12 is hereinafter referred to as a “retracted state”.

As shown in FIG. 3C, when the processing cup 12 is in the retracted state, there is a large gap (vertical gap between the protrusion 75 (the upper surface) of the second guard 54 and the partition plate 16 (the lower surface). About 70 mm) W2 is separated. Therefore, there is almost no pressure loss when the gas passes between the protrusion 75 and the partition plate 16.

On the other hand, in this state, since the upper end of the second guard 54 is located below the peripheral end surface of the substrate W, the tip of the spin chuck 5 (spin base 19) and the second guard 54 (the folded portion). 74), the pressure loss is large when the gas passes through the gap S0 between the spin chuck 5 and the tip of the second guard 54. Therefore, the downflow DF1 flowing inside the chamber 4 in the retracted state of the processing cup 12 passes between the protrusion 75 and the partition plate 16 and enters the lower space 4a of the chamber 4.

Further, as shown in FIG. 3A, in the first liquid receiving position state or the second liquid receiving position state of the processing cup 12, the protrusion 75 (the upper surface thereof) of the second guard 54 and the lower surface of the partition plate 16 (the lower surface thereof). ) Is narrower than that in the retracted state (the vertical interval is about 30 mm and the horizontal interval is about 2 mm). Therefore, the pressure loss at which the gas passes through the gap S between the protrusion 75 and the partition plate 16 is larger than that in the retracted state. In addition, since the upper end of the second guard 54 is located above the peripheral end surface of the substrate W, the gap S0 between the spin chuck 5 and the tip of the second guard 54 is more than in the retracted state. Therefore, the pressure loss when the gas passes between the spin chuck 5 and the tip of the second guard 54 is smaller than that in the retracted state (that is, exists to some extent). Accordingly, in the first liquid receiving position state or the second liquid receiving position state of the processing cup 12, the downflow DF2 flowing inside the chamber 4 causes the clearance S between the protrusion 75 and the partition plate 16 and the spin. It enters the lower space 4a of the chamber 4 through both the gap S0 between the chuck 5 and the tip of the second guard 54.

As shown in FIG. 3B, when the processing cup 12 is in the first upper position state or the second upper position state, the upper surface of the protrusion 75 of the second guard 54 and the lower surface of the partition plate 16 are in contact with each other. The gap S between the protrusion 75 and the partition plate 16 is substantially zero (substantially closed. More strictly speaking, the vertical interval is about 3 mm and the horizontal interval is about 2 mm). .

On the other hand, in this state, since the upper end of the second guard 54 is positioned higher than the peripheral end surface of the substrate W, the spin chuck 5 (spin base 19) and the tip of the second guard 54 The interval between them is extremely large, so that when the gas passes between the spin chuck 5 and the tip of the second guard 54, the pressure loss hardly occurs. Therefore, the downflow DF3 flowing inside the chamber 4 in the first upper position state or the second upper position state of the processing cup 12 passes exclusively between the spin chuck 5 and the tip of the second guard 54, It enters the lower space 4 a of the chamber 4.

FIG. 4 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. The storage unit stores a program executed by the arithmetic unit.

The control device 3 controls operations of the spin motor 17, the nozzle moving unit 32, the shielding plate rotating unit 26, the shielding plate lifting / lowering unit 27, the guard lifting / lowering unit 55, and the like. The control device 3 opens and closes the SPM valve 31, the first organic solvent valve 38, the second organic solvent valve 39, the suction valve 42, the water valve 47, the inert gas valve 49, and the like.

FIG. 5 is a flowchart for explaining a first substrate processing example by the processing unit 2. 6A to 6E are schematic diagrams for explaining a first substrate processing example.

Hereinafter, a first substrate processing example will be described with reference to FIGS. 2A and 2B and FIG. 3A to 3C and FIGS. 6A to 6E will be referred to as appropriate. The first substrate processing example is a resist removal process for removing the resist formed on the upper surface of the substrate W. As described below, the first substrate processing example includes an SPM supply step (first chemical solution supply step) S3 for supplying SPM to the upper surface of the substrate W, and a liquid organic solvent such as IPA on the upper surface of the substrate W. And an organic solvent step (second chemical solution supply step) S5 to be supplied. SPM and an organic solvent are a combination of chemicals that are dangerous (in this case, rapid reaction) due to contact.

When the resist removal process is performed on the substrate W by the processing unit 2, the substrate W after the ion implantation process at a high dose is carried into the chamber 4 (step S1 in FIG. 5). It is assumed that the loaded substrate W has not been subjected to a process for ashing the resist. A fine pattern with a fine and high aspect ratio is formed on the surface of the substrate W.

The opposing member 7 (that is, the blocking plate 21 and the central axis nozzle 33) is retracted to the retracted position, the SPM nozzle 28 is retracted from above the spin chuck 5, and the first and

second guards

53, 54 are in the lower position. In the lowered state (the upper ends of the first and

second guards

53 and 54 are both disposed below the holding position of the substrate W), the control device 3 holds the substrate W The hand H (see FIG. 1) of the transfer robot CR (see FIG. 1) enters the chamber 4. As a result, the substrate W is delivered to the spin chuck 5 with its surface (resist formation surface) facing upward. Thereafter, the substrate W is held on the spin chuck 5.

Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 17 (step S2 in FIG. 5). The substrate W is raised to a predetermined liquid processing speed (in the range of about 10-500 rpm, for example, about 400 rpm), and is maintained at the liquid processing speed.

Next, the control device 3 performs an SPM supply process (step S3 in FIG. 5) for supplying a high temperature SPM to the upper surface of the substrate W. In the SPM supply step S 3, the control device 3 supplies the high temperature SPM from the SPM nozzle 28 to the center of the upper surface of the substrate W, for example, in order to peel the resist from the surface of the substrate W.

Specifically, the control device 3 controls the nozzle moving unit 32 to move the SPM nozzle 28 from the retracted position to the processing position. Thereby, as shown in FIG. 6A, the SPM nozzle 28 is disposed above the central portion of the substrate W.

After the SPM nozzle 28 is disposed at the processing position (for example, the center position), the control device 3 controls the guard lifting / lowering unit 55 to raise the first and

second guards

53 and 54 to the upper position ( The state of the processing cup 12 is changed to the first upper position state), and the first guard 53 is opposed to the peripheral end surface of the substrate W.

In the first upper position state of the processing cup 12, as shown in FIG. 6B, a first interval 87 (for example, substantially zero) between the upper end of the second guard 54 and the lower end surface 29a of the nozzle arm 29 is It becomes narrower than a second distance 88 (for example, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28. Furthermore, in the first upper position state of the processing cup 12, the upper end of the second guard 54 is intermediate between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5. It is a position located above the position M (see FIG. 3B).

After the first and

second guards

53 and 54 are raised, the control device 3 opens the SPM valve 31. As a result, high temperature (for example, about 170 ° C. to about 180 ° C.) SPM is supplied from the SPM pipe 30 to the SPM nozzle 28, and high temperature SPM is discharged from the discharge port 28a of the SPM nozzle 28 as shown in FIG. 6B. The The high-temperature SPM discharged from the SPM nozzle 28 is deposited on the center of the upper surface of the substrate W, receives centrifugal force due to the rotation of the substrate W, and flows outward along the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film of SPM. The resist is peeled off from the surface of the substrate W and removed from the surface of the substrate W by the high temperature SPM. Further, the supply position of the high-temperature SPM from the SPM nozzle 28 may be moved (scanned) between the center portion of the upper surface of the substrate W and the peripheral portion of the upper surface.

The SPM supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 53. The SPM flowing down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61 to drain the SPM. Guided to a processor (not shown).

In the SPM supply step S3, since the SPM used is extremely high (for example, about 170 ° C. to about 180 ° C.), a large amount of SPM mist MI is generated. Due to the supply of the SPM to the substrate W, a large amount of SPM mist MI generated around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the SPM supply step S3, although the height position of the guard (at least the second guard 54) is high enough to achieve the purpose of catching the chemical liquid scattered from the substrate W, the height of the lower height In the case of the position, the atmosphere containing the SPM mist MI inside the processing cup 12 may flow out of the processing cup 12 through the upper opening 12 a of the processing cup 12 and diffuse into the chamber 4. is there. The atmosphere containing the SPM mist MI becomes particles and adheres to the substrate W to contaminate the substrate W or contaminate the inner wall of the partition wall 13 of the chamber 4. It is not desirable to diffuse into

In the SPM supply step S3 according to the first substrate processing example, in a state where the first and

second guards

53 and 54 are arranged at the upper position (that is, in the first upper position state of the processing cup 12), A high temperature SPM is supplied to the upper surface of the substrate W in a rotating state. In the first upper position state of the processing cup 12, an annular gap 86 (see FIG. 5) formed between the upper end of the second guard 54 and the substrate facing surface 6 of the blocking plate 21 in the state of being disposed at the upper position P1. 3B) is set narrowly. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow out into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere containing the SPM mist MI inside the processing cup 12 from flowing into the chamber 4.

Further, in the first upper position state of the processing cup 12, the gap S between the protrusion 75 and the partition plate 16 becomes substantially zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is It passes between the spin chuck 5 and the tip of the second guard 54 and enters the lower space 4 a of the chamber 4. Thereby, the outflow of the atmosphere containing the mist MI of SPM from the processing cup 12 to the inside of the chamber 4 can be more effectively suppressed.

In the first upper position state of the processing cup 12 (the state indicated by the solid line in FIG. 3B), the first guard 53 and the second guard 54 are closest to each other. In this state, the folded portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction. Therefore, the SPM mist MI floating on the upper surface of the substrate W does not enter between the first guard 53 and the second guard 54 in the SPM supply step S3. Before the start of the SPM supply step S3, IPA may adhere to the inner wall of the second guard 54. However, since the SPM mist MI does not enter between the first guard 53 and the second guard 54, it is possible to suppress or prevent the SPM and IPA from being mixed in the processing cup 12 in the SPM supply step S3. it can. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.

When a predetermined period elapses from the start of high temperature SPM discharge, the SPM supply step S3 ends. Specifically, the control device 3 closes the SPM valve 31 and stops discharging hot SPM from the SPM nozzle 28. Further, the control device 3 controls the guard lifting unit 55 to lower the first and

second guards

53 and 54 to the liquid receiving position P2, respectively. After starting the lowering of the first and

second guards

53 and 54, the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.

Next, a water supply process (step S4 in FIG. 5) for supplying water as a rinsing liquid to the upper surface of the substrate W is performed. Specifically, the control device 3 opens the water valve 47. Thereby, as shown in FIG. 6C, water is discharged from the central axis nozzle 33 (second nozzle 25 (see FIG. 2B)) toward the center of the upper surface of the substrate W. The water discharged from the central axis nozzle 33 is deposited on the central portion of the upper surface of the substrate W, and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W. This water causes the SPM on the substrate W to flow outward and is discharged around the substrate W. As a result, the liquid film of SPM on the substrate W is replaced with a liquid film of water covering the entire upper surface of the substrate W. That is, the SPM is washed away from the upper surface of the substrate W with water as the rinse liquid.

The water flowing on the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 53. Then, the water flowing down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61 to drain the water. Guided to a processor (not shown). If the SPM liquid used in the SPM supply step S3 adheres to the inner wall of the first guard 53, the first drain groove 59, and the pipe wall of the first drain pipe 61, the SPM liquid Is washed away by water.

When a predetermined period has elapsed from the start of water discharge, the control device 3 closes the water valve 47 and stops water discharge from the second nozzle 25. Thereby, water supply process S4 is complete | finished.

Next, an organic solvent process (step S5 in FIG. 5) for supplying IPA as an organic solvent to the upper surface of the substrate W is performed. Specifically, as shown in FIG. 6D, the control device 3 controls the shield plate lifting / lowering unit 27 to place the shield plate 21 in the proximity position. When the blocking plate 21 is in the proximity position, the blocking plate 21 blocks the upper surface of the substrate W from the surrounding space.

Further, the control device 3 controls the guard lifting / lowering unit 55 so that the first guard 53 remains at the lower position P3, the second guard 54 is disposed at the upper position P1, and the second guard 54 is placed on the substrate W. It is made to oppose to the peripheral end surface.

Also, the control device 3 decelerates the rotation of the substrate W to a predetermined paddle speed. This paddle speed means that when the substrate W is rotated at the paddle speed, the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, Alternatively, the speed is such that the centrifugal force and the surface tension almost antagonize.

Then, after the rotation speed of the substrate W is lowered to the paddle speed, the control device 3 opens the first organic solvent valve 38 while opening the second organic solvent valve 39 and closing the suction valve 42. As a result, IPA from the organic solvent supply source is supplied to the first nozzle 24, and IPA is discharged from the first nozzle 24 to land on the upper surface of the substrate W.

In the organic solvent step S5, water contained in the liquid film on the upper surface of the substrate W is sequentially replaced with IPA by discharging IPA from the first nozzle 24. As a result, the IPA liquid film covering the entire upper surface of the substrate W is held on the upper surface of the substrate W in a paddle shape. Even after the liquid film on the entire upper surface of the substrate W is replaced with the IPA liquid film, the supply of IPA to the upper surface of the substrate W is continued. Therefore, IPA is discharged from the peripheral edge of the substrate W.

IPA discharged from the peripheral edge of the substrate W is received by the inner wall of the second guard 54. Then, the IPA that flows down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 to drain the IPA. (Not shown).

In this embodiment, the IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54 facing the peripheral end surface of the substrate W, and retreats downward with respect to the peripheral end surface of the substrate W. It is not received by the inner wall of the guard 53. In addition, in the organic solvent step S 5, a small amount of IPA mist is generated around the substrate W, and the IPA mist is not guided to the inner wall of the first guard 53. Moreover, the SPM attached to the first guard 53 in the SPM supply step S3 is washed away by the water supply in the water supply step S4. Therefore, in the organic solvent step S5, the contact of IPA and SPM does not occur.

When a predetermined period has elapsed from the start of IPA discharge, the control device 3 closes the first organic solvent valve 38 and stops IPA discharge from the second nozzle 25. Thereby, organic solvent process S5 is complete | finished.

Next, a spin dry process (step S6 in FIG. 5) for drying the substrate W is performed. Specifically, the control device 3 controls the spin motor 17 with the blocking plate 21 being placed in the proximity position, thereby controlling the organic solvent from the SPM supply step S3 as shown in FIG. 6E. The substrate W is accelerated to a drying rotation speed (for example, several thousand rpm) larger than the rotation speed in each step up to step S5, and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. Further, the control device 3 controls the shielding plate rotating unit 26 to rotate the shielding plate 21 in the rotation direction of the substrate W at a high speed.

In parallel with the spin dry process S6, an organic solvent suction process for sucking the organic solvent in the organic solvent pipe 37 is executed. In the organic solvent suction step, the organic solvent present in the organic solvent pipe 37 after the organic solvent step S5 is sucked by the suction unit 44.

Specifically, after the completion of the organic solvent step S5, the control device 3 opens the suction valve 42 while opening the second organic solvent valve 39 and closing the first organic solvent valve 38. As a result, the inside of the organic solvent downstream portion 43 is exhausted, and IPA present in the organic solvent downstream portion 43 is drawn into the suction pipe 41 (suction). The suction of IPA is performed until the tip surface of the IPA moves back to a predetermined standby position in the pipe. When the tip surface of the IPA is retracted to the standby position, the control device 3 closes the suction valve 42. Thereby, it is possible to prevent the IPA from dropping from the organic solvent pipe 37 in the spin drying step S6.

When a predetermined period has elapsed since the acceleration of the substrate W, the control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step S7 in FIG. 5), and the blocking plate rotation unit 26 is moved. The rotation of the blocking plate 21 is stopped by controlling.

Thereafter, the substrate W is unloaded from the chamber 4 (step S8 in FIG. 5). Specifically, the control device 3 raises the blocking plate 21 to place it in the retracted position, lowers the second guard 54 to the lower position P3, and moves the first and

second guards

53, 54 to the substrate. It is arranged below the W holding position. Thereafter, the control device 3 causes the hand H of the substrate transport robot CR to enter the chamber 4. Then, the control device 3 causes the hand of the substrate transport robot CR to hold the substrate W on the spin chuck 5 and retracts the hand H of the substrate transport robot CR from the chamber 4. Thereby, the substrate W from which the resist is removed from the surface is carried out of the chamber 4. *

According to the first substrate processing example, the SPM supply step S3 is executed in the first upper position state of the processing cup 12. Therefore, in the SPM supply step S3, the first chemical solution scattered from the substrate can be satisfactorily received by the first guard 53 while the first guard 53 is disposed as high as possible.

In addition, since the guard (first and second guards 53 and 54) that receives the processing liquid is divided in the SPM supply process S3 and the organic solvent supply process S5, the SPM and the IPA are mixed in the processing cup 12. Can be suppressed or prevented. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.

FIG. 7 is an illustrative sectional view showing an example of a configuration example of the lower part of the processing unit 2 in an enlarged manner. *

The water branch pipe 102 and the IPA branch pipe 103 may be connected to the tip of the second drainage pipe 64 of the second cup 52. That is, the distribution destination of the liquid flowing through the second drainage pipe 64 (the distribution destination of the liquid passing through the internal space defined between the first guard 53 and the second guard 54) has two branch pipes ( Branching into a water branch pipe 102 and an IPA branch pipe 103). The case where such two branch piping is employ | adopted is demonstrated below.

The water branch pipe 102 is provided with a water open / close valve 105 for opening and closing the water branch pipe 102. The IPA branch pipe 103 is provided with an IPA on / off valve 106 for opening and closing the IPA branch pipe 103. When the water on / off valve 105 is opened with the IPA on / off valve 106 closed, the flow destination of the liquid flowing through the second drainage pipe 64 is set to the water branch pipe 102. When the IPA on / off valve 106 is opened while the water on / off valve 105 is closed, the flow destination of the liquid flowing through the second drainage pipe 64 is set to the IPA branch pipe 103.

8A to 8C are schematic diagrams for explaining the second substrate processing example. The second substrate processing example is the same as the first substrate processing example in the basic processing flow. A second substrate processing example will be described with reference to FIGS. 2A, 2B, 5 and 7. FIG. 8A to 8C will be referred to as appropriate.

The second substrate processing example is different from the first substrate processing example in that the state of the processing cup 12 is arranged in the second upper position state instead of the first upper position state in the SPM supply step S3. ing. The second upper position state of the processing cup 12 is a state in which the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position. Further, by placing the processing cup 12 in the second upper position in the SPM supply step S3, the wall of the internal space defined between the first guard 53 and the second guard 54 (second guard 54). SPM mist MI may adhere to the inner wall of the first guard 53, the outer wall of the first guard 53, etc., but in the water supply step S4, the processing cup 12 is brought into the second liquid receiving position to start from the peripheral edge of the substrate W. By supplying the scattered water to the internal space defined between the first guard 53 and the second guard 54, the walls of the internal space (the inner walls of the second guard 54 and the first guard 53 This is different from the first substrate processing example in that the SPM mist MI adhering to the outer wall or the like is washed away with water. Hereinafter, the SPM supply step S3 according to the second substrate processing example will be described in detail.

In the SPM supply step S3, after the SPM nozzle 28 is disposed at the processing position, the control device 3 controls the guard lifting unit 55 to raise the first guard 53 to the liquid receiving position P2, and to The guard 54 is raised to the upper position P1, and the second guard 54 is opposed to the peripheral end surface of the substrate W.

In the second upper position state of the processing cup 12, as in the first upper position state of the processing cup 12, the first gap 87 (between the upper end of the second guard 54 and the lower end surface 29 a of the nozzle arm 29 is provided. For example, substantially zero) is narrower than a second distance 88 (for example, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28. More specifically, the second upper position state of the processing cup 12 is such that the upper end of the second guard 54 is intermediate between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5. It is a position located above the position M (see FIG. 3B). After the second guard 54 is raised, the control device 3 opens the SPM valve 31 (see FIG. 2A).

As shown in FIG. 8A, in the SPM supply step S3 according to this embodiment, the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position P1 ( That is, in the second upper position state of the processing cup 12, the high temperature SPM is supplied to the upper surface of the substrate W in the rotating state. The SPM supplied to the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and scatters laterally from the peripheral edge of the substrate W. Then, the SPM scattered to the side is received by the first guard 53 at the liquid receiving position P 2 and flows down along the inner wall of the first guard 53. The SPM flowing down the first guard 53 is led to the first drainage pipe 61 and led to a drainage treatment apparatus (not shown) for draining the SPM.

Further, in the SPM supply step S3, since the SPM used is extremely high temperature (for example, about 170 ° C. to about 180 ° C.), a large amount of SPM mist MI is generated. Due to the supply of the SPM to the substrate W, a large amount of SPM mist MI generated around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the second upper position state of the processing cup 12, an annular gap 86 (see FIG. 5) formed between the upper end of the second guard 54 and the substrate facing surface 6 of the blocking plate 21 in the state of being disposed at the upper position P1. 3B) is set narrowly. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow out into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere containing the SPM mist MI inside the processing cup 12 from flowing into the chamber 4.

Further, in the second upper position state of the processing cup 12, the gap S between the projection 75 and the partition plate 16 becomes substantially zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is By passing between the spin chuck 5 and the tip of the second guard 54 and entering the lower space 4a of the chamber 4, the outflow of the atmosphere containing the SPM mist MI from the processing cup 12 into the chamber 4 is prevented. Can be suppressed more effectively.

In the SPM supply step S3 of this second substrate processing example, the SPM mist MI enters the internal space defined between the first guard 53 and the second guard 54, and as a result, the SPM mist There is a risk that MI may adhere to the walls of the internal space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.).

After the end of the SPM supply step S3, the control device 3 controls the guard lifting / lowering unit 55 to lower the first guard 53 from the liquid receiving position P2 to the lower position P3 and to move the second guard 54 to the upper position P1. To the liquid receiving position P2. That is, the state of the processing cup 12 is changed to the second liquid receiving position state. In the second liquid receiving position state of the processing cup 12, the second guard 54 faces the peripheral end surface of the substrate W. Prior to the discharge of water, the control device 3 opens the water on-off valve 105 while closing the IPA on-off valve 106, thereby controlling the flow destination of the liquid flowing through the second drainage pipe 64. Set to 102. After starting the lowering of the first guard 53, the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.

Next, a water supply process (step S4 in FIG. 5) is performed. Specifically, the control device 3 opens the water valve 47. 8B, water is discharged from the center axis nozzle 33 (from the second nozzle 25 (see FIG. 2B) toward the center of the upper surface of the substrate W. The water is discharged from the center axis nozzle 33. The water is deposited on the central portion of the upper surface of the substrate W, and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.

The water supplied to the upper surface of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W, and is an internal space (first space) defined between the first guard 53 and the second guard 54. The inner wall of the second guard 54, the outer wall of the first guard 53, etc.) and received by the inner wall of the second guard 54. Then, the water flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64. In the water supply step S4 in the second substrate processing example, since the flow destination of the liquid flowing through the second drainage pipe 64 is set to the water branch pipe 102 (see FIG. 7), the second drainage pipe The water flowing through 64 is supplied to the water branch pipe 102 and then sent to a treatment device (not shown) for draining the water.

After the aforementioned SPM supply step S3, the walls of the internal space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.) partitioned between the first guard 53 and the second guard 54 There is a risk that the SPM mist MI adheres to the surface. However, in the water supply step S4, the SPM mist MI adhering to the wall is washed away by the water supplied to the internal space defined between the first guard 53 and the second guard 54. When a predetermined period elapses from the start of water discharge, the water supply step S4 ends.

Next, an organic solvent process (step S5 in FIG. 5) for supplying IPA as an organic solvent to the upper surface of the substrate W is performed. Before starting the discharge of IPA, the control device 3 opens the IPA on-off valve 106 while closing the water on-off valve 105, thereby controlling the flow destination of the liquid flowing through the second drainage pipe 64 to the IPA branch pipe 103 ( (See FIG. 7). Other controls in the organic solvent step S5 are the same as those in the first substrate processing example.

IPA discharged from the peripheral edge of the substrate W is received by the inner wall of the second guard 54. Then, the IPA that flows down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 to drain the IPA. (Not shown). In the organic solvent step S5 in the second substrate processing example, since the distribution destination of the liquid flowing through the second drainage pipe 64 is set to the IPA branch pipe 103, the IPA flowing through the second drainage pipe 64 is Are supplied to the branch pipe 103 for IPA and then sent to a processing device (not shown) for draining the IPA. When a predetermined period elapses from the start of IPA discharge, the organic solvent step S5 ends. Next, the control device 3 executes a spin dry process (step S6 in FIG. 5). After the end of the spin drying step S6, the control device 3 stops the rotation of the substrate W by the spin chuck 5 (step S7 in FIG. 5) and stops the rotation of the blocking plate 21. Thereafter, the substrate W is unloaded from the chamber 4 (step S8 in FIG. 5). Each of these steps is the same as in the case of the first substrate processing example, and thus the description thereof is omitted.

In the second substrate processing example, after unloading the substrate W, a cup cleaning process for cleaning the processing cup 12 is executed. In the cup cleaning process, water is used as the cleaning liquid.

In the cup cleaning process, the control device 3 starts the rotation of the spin base 19 by the spin motor 17 (see FIG. 2A).

Prior to the start of water supply to the spin base 19, the control device 3 controls the guard lifting / lowering unit 55 (see FIG. 2A) to keep the first guard 53 at the lower position P3 while maintaining the second guard 54. Is raised to the liquid receiving position P2. That is, as shown in FIG. 8C, the state of the processing cup 12 is changed to the second liquid receiving position state. In the second liquid receiving position state of the processing cup 12, the second guard 54 faces the peripheral edge portion of the upper surface 19 a of the spin base 19.

Prior to the start of water supply to the spin base 19, the control device 3 opens the water on-off valve 105 (see FIG. 7) while closing the IPA on-off valve 106 (see FIG. 7), thereby The flow destination of the liquid flowing through the drainage pipe 64 is set to the water branch pipe 102 (see FIG. 7).

When the rotation speed of the spin base 19 reaches a predetermined rotation speed, the control device 3 opens the water valve 47 (see FIG. 2). Thereby, as shown in FIG. 8C, water is discharged from the central axis nozzle 33 (second nozzle 25 (see FIG. 2B)). The water discharged from the central axis nozzle 33 is deposited on the central portion of the upper surface 19a of the spin base 19 and receives a centrifugal force due to the rotation of the spin base 19, and the peripheral portion of the spin base 19 on the upper surface 19a of the spin base 19. And scatters from the peripheral edge of the spin base 19 to the side.

The water scattered from the peripheral edge of the spin base 19 is an internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.). And is received by the inner wall of the second guard 54. The water flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 (see FIG. 7). In the cup cleaning process, since the flow destination of the liquid flowing through the second drainage pipe 64 is set to the water branch pipe 102 (see FIG. 7), the water flowing through the second drainage pipe 64 is used for water. It is supplied to the branch pipe 102 and then sent to a treatment device (not shown) for draining water.

After unloading the substrate W, the walls of the internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 and the outer wall of the first guard 53), the second The IPA liquid adheres to the drainage groove 62 and the second drainage pipe 64, and the IPA liquid is washed away with water by the cup cleaning process.

When a predetermined period has elapsed from the start of water discharge, the control device 3 closes the water valve 47 and stops the supply of water to the upper surface 19a of the spin base 19. Further, the control device 3 controls the spin motor 17 to stop the rotation of the spin base 19. Thereby, a cup washing | cleaning process is complete | finished.

Further, in the cup cleaning process of the second substrate processing example, a dummy substrate made of SiC or the like (having the same diameter as the substrate W) is held by the spin chuck 5 and a cleaning solution such as water is used for the rotating dummy substrate. In this case, water may be scattered from the periphery of the dummy substrate to the side of the dummy substrate.

According to the second substrate processing example, the SPM supply step S3 is executed in the second upper position state of the processing cup 12. Therefore, in the SPM supply step S3, the first chemical liquid scattered from the substrate can be satisfactorily received by the second guard 53 while arranging the second guard 53 as high as possible.

Further, the wall of the internal space where the mist MI of the SPM generated in the SPM supply step S3 is partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the first guard 53). There is a risk of adhering to the outer wall of the However, in the water supply step S4 after the end of the SPM supply step S3, the internal space (the second space) in which the water scattered from the peripheral portion of the substrate W is partitioned between the first guard 53 and the second guard 54. SPM adhering to the inner wall of the internal space can be washed away by supplying it to the inner wall of the guard 54 or the outer wall of the first guard 53. Therefore, it is possible to suppress or prevent the SPM and IPA from being mixed in the processing cup 12. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.

In the organic solvent supply step S5, the processing liquid discharged from the substrate W is received by the inner wall of the second guard 54. Therefore, after the organic solvent supply step S 5 is finished, the IPA liquid adheres to the wall of the internal space defined between the first guard 53 and the second guard 54. However, in order to execute the cup cleaning process after the start of the organic solvent supply process S5, the wall of the internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 and the like) The IPA liquid adhering to the outer wall of the first guard 53), the second drainage groove 62, and the second drainage pipe 64 can be washed away with water. Therefore, it is possible to suppress or prevent the SPM and IPA from coming into contact with each other inside the processing cup 12, thereby suppressing or preventing the inside of the processing cup 12 from becoming a particle generation source.

In the second substrate processing example, the water supply step S4 may be performed before the start of the SPM supply step S3.

As described above, according to this embodiment, in the SPM supply step S3, the high temperature SPM is supplied to the upper surface of the substrate W in the rotating state with the second guard 54 disposed at the upper position P1. In a state where the second guard 54 is disposed at the upper position P1, a large distance is ensured between the upper opening 12a of the processing cup 12 and the substrate W. In the SPM supply step S3, mist of SPM is generated by supplying the high-temperature SPM to the substrate W. However, since the distance between the upper opening 12a of the processing cup 12 and the substrate W is secured large, It is difficult for the atmosphere containing mist to flow out of the processing cup 12 through the upper opening 12 a of the processing cup 12.

Specifically, the upper position P1 of each of the

guards

53 and 54 is such that the annular gap 86 formed between the upper end of the guard and the facing member 7 (substrate facing surface 6) is larger than the vertical width W1 of the nozzle arm 29. The position is large and narrow as much as possible. Thus, the annular gap 86 can be set to a minimum size within a range that allows passage of the nozzle arm 29. In this case, the amount of atmosphere flowing out from the inside of the processing cup 12 to the inside of the chamber 4 can be effectively reduced. Thereby, the spreading | diffusion to the circumference | surroundings of the atmosphere containing SPM can be suppressed much more effectively.

From another point of view, the upper position P1 of each of the

guards

53 and 54 is a position below the lower end surface 29a of the nozzle arm 29 and above the discharge port 28a. More specifically, the upper position P 1 of each

guard

53, 54 is such that the first gap 87 between the upper end of the guard and the lower end surface 38 a of the nozzle arm 29 is such that the lower end surface 29 a of the nozzle arm 29 and the SPM nozzle 28. This position is narrower than the second distance 88 between the discharge port 34a. Further, the upper position P1 of each of the

guards

53 and 54 is such that the upper end of the guard is an intermediate position M between the lower end surface 38a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5 (see FIG. 3B). ) Above.

By setting the upper position P1 to such a position, the amount of atmosphere flowing out from the processing cup 12 into the chamber 4 can be effectively reduced. Thereby, the spreading | diffusion to the circumference | surroundings of the atmosphere containing SPM can be suppressed much more effectively.

Although one embodiment of the present invention has been described above, the present invention can also be implemented in other forms.

For example, in the first and second substrate processing examples, a cleaning chemical supply process for supplying a cleaning chemical to the upper surface of the substrate W may be performed after the water supply process S4 is completed. In this case, hydrofluoric acid and SC1 (mixed solution containing NH ₄ OH and H ₂ O ₂ ) can be used as the cleaning chemical solution used in the cleaning chemical supply step. When the cleaning chemical solution supply process is executed, a second water supply process is then executed in which the chemical solution on the upper surface of the substrate W is washed away with the rinse liquid.

In the first and second substrate processing examples, hydrogen peroxide solution (H ₂ O ₂ ) is supplied to the upper surface (front surface) of the substrate W after the SPM supply step S3 or the cleaning chemical solution supply step. You may perform the hydrogen peroxide solution supply process.

In the above-described embodiment, IPA is exemplified as an example of the organic solvent used as an example of the second chemical solution, but methanol, ethanol, HFE (hydrofluoroether), acetone, and the like can be exemplified as the organic solvent. . Further, the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component. For example, a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.

Although the embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical contents of the present invention, and the present invention is construed to be limited to these specific examples. Rather, the scope of the present invention is limited only by the accompanying claims.

This application corresponds to Japanese Patent Application No. 2016-163744 filed with the Japan Patent Office on August 24, 2016, and the entire disclosure of this application is incorporated herein by reference.

1: substrate processing apparatus 4: chamber 5: spin chuck (substrate holding unit)
6: Substrate facing surface 7: Opposing member 8: SPM supply unit (first chemical solution supply unit)
10: Organic solvent supply unit (second chemical supply unit)
11: Water supply unit 12: Processing cup 17: Spin motor (rotary unit)
28: SPM nozzle (nozzle)
28a: Discharge port 29: Nozzle arm 29a: Lower end surface (lower end of nozzle arm)
55: Guard lifting unit (lifting unit)
75: Projection (occlusion)
86: Annular gap A3: Oscillating axis P1: Upper position P2: Liquid receiving position M: Intermediate position

Claims

A chamber;
A substrate holding unit housed in the chamber and holding the substrate in a horizontal position;
A rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis;
A nozzle for discharging liquid from the discharge port toward the main surface of the substrate having a discharge port and held by the rotating unit;
A first chemical supply unit for supplying a first chemical to the nozzle;
A plurality of cylindrical guards including a cylindrical first guard surrounding the periphery of the substrate holding unit and a cylindrical second guard surrounding the periphery of the first guard; A processing cup for housing;
An elevating unit for elevating and lowering at least one of the plurality of guards, and a controller for controlling the rotating unit, the first chemical solution supply unit, and the elevating unit,
The control device includes:
A predetermined liquid receiving position in which at least one of the plurality of guards is received at a predetermined upper position and can receive the first chemical liquid scattered from the substrate rotated by the rotating unit. An upper position arranging step, which is set at an upper position and is arranged at an upper position where the guard can receive the liquid scattered from the substrate;
A substrate processing apparatus that executes a first chemical solution supply step of supplying a first chemical solution to a main surface of a substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position.
An opposing member having a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit, and disposed above the guard, wherein the guard is disposed at the upper position. The substrate processing apparatus according to claim 1, further comprising a facing member that forms an annular gap with the upper end of the guard in a state where the guard is in contact.
The nozzle is held and can be swung around a predetermined swing axis set outside the rotation range of the substrate so as to move the nozzle along the main surface of the substrate held by the substrate holding unit. Further including a nozzle arm provided in
The substrate processing apparatus according to claim 1, wherein the annular gap is set larger than a vertical width of the nozzle arm so that the nozzle arm can straddle the inside and outside of the rotation range.
Oscillates around a predetermined oscillation axis set on the side of the substrate holding unit so as to move the nozzle along the main surface of the substrate held by the substrate holding unit. Further comprising a nozzle arm provided in a possible manner,
The upper position is such that the first distance between the upper end of the guard and the lower end of the nozzle arm in the state of being arranged at the upper position is a second interval between the lower end of the nozzle arm and the discharge port. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a position that is narrower than the distance between the two.
In the upper position, the upper end of the guard in the upper position is higher than the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is positioned.
A second chemical solution supply unit for supplying a second chemical solution different from the first chemical solution to the main surface of the substrate;
The control device further controls the second chemical liquid supply unit,
The control device includes:
Disposing the first guard at a lower position where the upper end of the first guard is positioned below the substrate held by the substrate holding unit; and disposing the second guard at the liquid receiving position;
In a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, the second surface is rotated on the main surface of the substrate while rotating the substrate by the rotating unit. The substrate processing apparatus according to claim 1, further executing a second chemical solution supply step of supplying the chemical solution.
The substrate processing apparatus according to claim 6, wherein the control device executes the step of arranging the first and second guards at the upper position as the upper position arranging step.
A water supply unit for supplying water to the nozzle;
The control device further controls the water supply unit,
The control device, the step of arranging the first and second guards at the liquid receiving position;
A water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position; The substrate processing apparatus according to claim 7.
The said control apparatus performs the process which arrange | positions the said 1st guard in the said liquid receiving position, and arrange | positions the said 2nd guard in the said upper position as said upper position arrangement | positioning process. Substrate processing equipment.
A water supply unit for supplying water to the nozzle;
The control device further controls the water supply unit,
The control device includes:
Disposing the first guard at a lower position where the upper end of the first guard is positioned below the substrate held by the substrate holding unit; and disposing the second guard at the liquid receiving position;
With the first guard disposed at the lower position and the second guard disposed at the liquid receiving position, water is applied to the main surface of the substrate while rotating the substrate by the rotating unit. The substrate processing apparatus according to claim 9, further executing a water supply step of supplying.
The control device executes the water supply step before and / or after the execution of the first chemical solution supply step and / or before and / or after the execution of the second chemical solution supply step. The substrate processing apparatus according to claim 10.
In the chamber, including a partition plate that vertically divides a side region of the substrate holding unit into an upper space on the upper side and a lower space on the lower side, and an exhaust port is opened in the lower space,
A gap is formed between the second guard and the partition plate,
The second guard has a closing portion for closing the gap,
With the second guard disposed at the upper position, the closing portion closes the gap, and the second guard is at a predetermined lower position set below the upper position. The substrate processing apparatus according to claim 1, wherein the gap is formed in a disposed state.
3. The substrate processing apparatus according to claim 1, wherein the first chemical solution includes a mixed solution of sulfuric acid and hydrogen peroxide solution.
A chamber, a substrate holding unit that is housed in the chamber and holds the substrate in a horizontal position, a rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis, and the substrate holding unit And a plurality of guards including a cylindrical second guard that surrounds the first guard and a substrate processing method that is executed in a substrate processing apparatus. ,
A substrate holding step of holding the substrate by the substrate holding unit;
At least one of the plurality of guards is located at a predetermined upper position above a predetermined liquid receiving position at which liquid splashing from the substrate rotated by the rotating unit can be received by the guard. And an upper position arranging step for arranging the liquid scattered from the substrate at an upper position where the liquid can be received by the guard;
A substrate processing method comprising: a first chemical solution supplying step of supplying a first chemical solution to a main surface of the substrate while rotating the substrate by the rotating unit in a state where the guard is disposed at the upper position.
Disposing the first guard at a lower position where the upper end of the first guard is positioned below the substrate held by the substrate holding unit; and disposing the second guard at the liquid receiving position;
In a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, the second surface is rotated on the main surface of the substrate while rotating the substrate by the rotating unit. The substrate processing method according to claim 14, further comprising: a second chemical solution supply step for supplying the chemical solution.
The substrate processing method according to claim 14 or 15, wherein the upper position arranging step includes a step of arranging the first and second guards at the upper position.
Disposing the first and second guards at the liquid receiving position;
And a water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position. Item 17. The substrate processing method according to Item 16.
The substrate processing method according to claim 14, wherein the upper position arranging step includes a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position. .
Disposing the first and second guards at the liquid receiving position;
Disposing the first guard at a lower position where the upper end of the first guard is positioned below the substrate held by the substrate holding unit; and disposing the second guard at the liquid receiving position;
With the first guard disposed at the lower position and the second guard disposed at the liquid receiving position, water is applied to the main surface of the substrate while rotating the substrate by the rotating unit. The substrate processing method according to claim 18, further comprising a supplying water supply step.
The water supply step is performed before and / or after execution of the first chemical liquid supply step and / or before and / or after execution of the second chemical liquid supply step. Substrate processing method.