+

WO2017187749A1 - Composition de polissage - Google Patents

Composition de polissage Download PDF

Info

Publication number
WO2017187749A1
WO2017187749A1 PCT/JP2017/006954 JP2017006954W WO2017187749A1 WO 2017187749 A1 WO2017187749 A1 WO 2017187749A1 JP 2017006954 W JP2017006954 W JP 2017006954W WO 2017187749 A1 WO2017187749 A1 WO 2017187749A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing composition
acid
abrasive grains
alloy
Prior art date
Application number
PCT/JP2017/006954
Other languages
English (en)
Japanese (ja)
Inventor
恭祐 天▲高▼
Original Assignee
株式会社フジミインコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社フジミインコーポレーテッド filed Critical 株式会社フジミインコーポレーテッド
Publication of WO2017187749A1 publication Critical patent/WO2017187749A1/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives

Definitions

  • the present invention relates to a polishing composition.
  • An alloy is a common body in which one kind of metal element and one or more kinds of metal elements and non-metal elements such as carbon, nitrogen and silicon are shared with one kind of metal element. It is manufactured for the purpose of improving properties such as heat resistance, corrosion resistance and heat resistance.
  • aluminum alloys are lightweight and have excellent strength, so they are used for various applications such as structural materials such as building materials and containers, transportation equipment such as automobiles, ships and aircraft, as well as various electrical appliances and electronic parts. It has been.
  • titanium alloys are widely used in precision instruments, ornaments, tools, sports equipment, medical parts and the like because they are lightweight and have excellent corrosion resistance.
  • stainless steel and nickel alloys which are iron-based alloys, have excellent corrosion resistance, and thus are used in various applications such as tools, machinery, and cooking utensils in addition to structural materials and transportation equipment.
  • Copper alloys are not only excellent in electrical conductivity, thermal conductivity, and corrosion resistance, but also in processability, and because of their beautiful finish, they are widely used in decorative items, tableware, musical instruments and parts of electrical materials. ing.
  • a material containing a resin has been used for the above-mentioned purposes.
  • Polishing using a polishing composition is mainly performed on the surface of an alloy or resin as described above, and further, a surface of a material such as a metal, a semimetal, or an oxide thereof, mainly for smoothing.
  • Patent Document 1 discloses an abrasive slurry in which abrasive grains having an average particle diameter of 0.05 to 1 ⁇ m are dispersed in an aqueous medium of 0.1 to 10% by weight, and the particle diameter in the abrasive slurry is 5 ⁇ m.
  • An abrasive slurry in which the content of the abrasive grains is 50 ppm or less is disclosed.
  • Patent Document 2 discloses a polishing composition containing water, a polishing material, a polishing accelerator, and at least one of hydroxypropylcellulose and hydroxyalkylalkylcellulose.
  • Patent Documents 1 and 2 have poor abrasive dispersibility, so that the polishing performance is not stable, and pipes and slurries are supplied during the production and use of the polishing composition. There was a problem that the abrasive grains settled in the tube and closed the piping. Furthermore, there was a problem that the redispersibility of the abrasive grains after long-term storage was poor.
  • the present invention has been made in view of the above problems, and an object thereof is to provide means for improving the dispersibility of abrasive grains while maintaining the polishing performance.
  • Another object of the present invention is to provide means for improving the redispersibility of abrasive grains while maintaining the polishing performance.
  • the present invention there is provided means for improving the dispersibility of abrasive grains while maintaining the polishing performance.
  • the present invention also provides means for improving the redispersibility of abrasive grains while maintaining the polishing performance.
  • the present invention is a polishing composition containing abrasive grains, a layered silicate compound, and a dispersion medium.
  • the polishing composition of the present invention having such a configuration can improve the dispersibility of abrasive grains while maintaining polishing performance such as a high polishing rate and a reduction in surface roughness of an object to be polished.
  • the polishing composition of the present invention having the above-described configuration can improve the redispersibility of abrasive grains while maintaining polishing performance such as a high polishing rate and a reduction in surface roughness of an object to be polished.
  • the polishing object according to the present invention is not particularly limited, but preferably contains at least one selected from the group consisting of alloy materials and resin materials.
  • the alloy material contains a metal species as a main component and a metal species different from the main component.
  • Alloy materials are named based on the metal species as the main component.
  • the alloy material include an aluminum alloy, an iron alloy, a titanium alloy, a nickel alloy, and a copper alloy. These alloy materials may be applied singly or in combination of two or more. Among these, it is preferable to include at least one selected from the group consisting of aluminum alloys and iron alloys.
  • the aluminum alloy contains aluminum as a main component, and preferably contains at least one selected from the group consisting of magnesium, silicon, copper, zinc, manganese, chromium, and iron as a metal species different from the main component.
  • the lower limit of the content of the metal species different from the main component in the aluminum alloy is not particularly limited, but is preferably 0.1% by mass or more based on the entire aluminum alloy.
  • the upper limit of the content of the metal species different from the main component in the aluminum alloy is not particularly limited, but is preferably 10% by mass or less with respect to the entire aluminum alloy.
  • the aluminum alloy contains at least one metal element selected from the group consisting of magnesium, silicon, copper, zinc, manganese, chromium, and iron over the entire aluminum alloy. On the other hand, it is an alloy containing 0.1% by mass or more.
  • the aluminum alloy include, for example, Al-Cu-based and Al-Cu-Mg-based alloy numbers 2000 series, Al-Mn-based alloy numbers 3000 series, as described in JIS H4000: 2006, Al -Si alloy number 4000 series, Al-Mg alloy number 5000 series, Al-Mg-Si alloy number 6000 series, Al-Zn-Mg alloy number 7000 series, Al-Fe-Mn series Alloy number 8000 series etc. are mentioned.
  • the iron alloy contains iron as a main component and preferably contains at least one selected from the group consisting of chromium, nickel, molybdenum, and manganese as a metal species different from the main component.
  • the lower limit of the content of the metal species different from the main component in the iron alloy is not particularly limited, but is preferably 10% by mass or more based on the entire iron alloy.
  • the upper limit of the content of the metal species different from the main component in the iron alloy is not particularly limited, but is preferably 50% by mass or less based on the entire iron alloy.
  • the iron alloy contains at least one metal element selected from the group consisting of chromium, nickel, molybdenum, and manganese in an amount of 10% by mass or more based on the entire iron alloy. It is an alloy containing.
  • the iron alloy is preferably stainless steel.
  • stainless steel include, for example, SUS201, SUS303, 303Se, SUS304, SUS304L, SUS304NI, SUS305, SUS305JI, SUS309S, SUS310S, SUS316, SUS316L, and SUS321 in the symbols of the type described in JIS G4303: 2005.
  • the titanium alloy contains titanium as a main component and contains, for example, aluminum, iron, vanadium, and the like as metal species different from the main component.
  • species different from the main component in a titanium alloy is 3.5 to 30 mass% with respect to the whole titanium alloy, for example.
  • Examples of the titanium alloy include those of 11 to 23 types, 50 types, 60 types, 61 types, and 80 types in the types described in JIS H4600: 2012.
  • the nickel alloy contains nickel as a main component and contains at least one selected from iron, chromium, molybdenum, and cobalt as a metal species different from the main component.
  • the content of the metal species different from the main component in the nickel alloy is, for example, 20% by mass to 75% by mass with respect to the entire nickel alloy.
  • Examples of the nickel alloy include NCF600, 601, 625, 750, 800, 800H, 825, NW0276, 4400, 6002, 6022 and the like in the alloy number described in JIS H4551: 2000.
  • the copper alloy contains copper as a main component and contains at least one selected from, for example, iron, lead, zinc, and tin as a metal species different from the main component.
  • species different from the main component in a copper alloy is 3 to 50 mass% with respect to the whole copper alloy, for example.
  • the alloy number described in JIS H3100: 2006 is C2100, 2200, 2300, 2400, 2600, 2680, 2720, 2801, 3560, 3561, 3710, 3713, 4250, 4430, 4621, 4640. 6140, 6161, 6280, 6301, 7060, 7150, 1401, 2051, 6711, 6712 and the like.
  • the type of the resin material is not particularly limited, and may be either a thermosetting resin or a thermoplastic resin.
  • thermosetting resins include, for example, epoxy resins, polyimide resins, phenol resins, amino resins, unsaturated polyester resins, thermosetting polyurethane resins, and the like.
  • thermoplastic resins include, for example, polystyrene resins, acrylonitrile-butadiene-styrene copolymer resins (ABS resins), (meth) acrylic resins, organic acid vinyl ester resins or derivatives thereof, vinyl ether resins, polyvinyl chloride, poly Halogen-containing resins such as vinylidene chloride and polyvinylidene fluoride, olefin resins such as polyethylene and polypropylene, saturated polyester resins such as polycarbonate resin, polyethylene terephthalate and polyethylene naphthalate, polyamide resins, thermoplastic polyurethane resins, polysulfone resins (polyethersulfone, Polysulfone), polyphenylene ether resin (2,6-xylenol polymer, etc.), cellulose derivatives (cellulose esters, cellulose carbamates, Loin ethers, etc.), silicone resin (a polydimethylsiloxane and polymethylphenylsi
  • thermoplastic resin is preferable from the viewpoint of impact resistance and weather resistance, and a polycarbonate resin is more preferable.
  • the polishing object including the resin material may be, for example, in the form of a member (resin member) formed from the resin material, or in the form of a composite material having a resin coating on the surface of a metal substrate or the like.
  • resin member a member formed from the resin material
  • resin coating film examples include thermosetting polyurethane resins and (meth) acrylic resins.
  • the resin coating film may be a transparent clear coating film.
  • the polishing composition of the present invention contains abrasive grains.
  • the abrasive grains have an action of mechanically polishing the object to be polished.
  • abrasive grains used in the present invention include metal oxides such as aluminum oxide (alumina), silicon oxide (silica), cerium oxide (ceria), zirconium oxide, titanium oxide (titania), and manganese oxide.
  • Metal carbides such as silicon carbide and titanium carbide, metal nitrides such as silicon nitride and titanium nitride, and metal borides such as titanium boride and tungsten boride. These abrasive grains may be used alone or in combination of two or more.
  • the abrasive grains may be commercially available products or synthetic products.
  • At least one selected from the group consisting of metal oxides and metal carbides is preferable from the viewpoint that those having various particle diameters can be easily obtained and an excellent polishing rate can be obtained.
  • Aluminum or silicon carbide is more preferred. Therefore, among these, it is more preferable that it is at least one of aluminum oxide and silicon carbide.
  • the lower limit of the volume average particle diameter of the abrasive grains is preferably 2.0 ⁇ m or more, more preferably 2.5 ⁇ m or more, further preferably 3.0 ⁇ m or more, and particularly preferably 3.5 ⁇ m or more. .
  • the upper limit of the volume average particle diameter of the abrasive grains is preferably 25.0 ⁇ m or less, more preferably 15.0 ⁇ m or less, further preferably 9.5 ⁇ m or less, and 9.0 ⁇ m or less. Particularly preferred. As the volume average particle diameter of the abrasive grains decreases, it becomes easier to obtain a surface with low defects and low roughness.
  • the volume average particle diameter of the abrasive grains is more preferably 3.0 ⁇ m or more and 9.5 ⁇ m or less, and particularly preferably 3.5 ⁇ m or more and 9.0 ⁇ m or less. Moreover, according to the preferable form of this invention, they are 2.0 micrometers or more and 9.5 micrometers or less. If the volume average particle diameter is less than 2.0 ⁇ m, the processing force required for the removal in the previous process may not be obtained, and if it exceeds 25 ⁇ m, the load on the subsequent process may be increased.
  • a rough polishing process for removing high-quality scratches (scratches) caused by mechanical grinding of the metal material at a high speed or improving smoothness is generally performed.
  • a method of sequentially performing a mirror polishing step and the like for making the metal material surface into a mirror surface after the step is mentioned.
  • an alumina abrasive grain or carbonized material that is dispersed in a solvent such as water while sandwiching a base material (polishing object) made of a metal material between upper and lower surface plates of a polishing apparatus and pressing from above.
  • the substrate can be roughly polished by supplying free abrasive grains such as silicon abrasive grains and silicon oxide abrasive grains, that is, a polishing liquid, and rotating the upper and lower surface plates.
  • the volume average particle diameter of the abrasive grains is defined as an integrated 50% particle diameter (D 50 ) based on a volume-based particle size distribution.
  • the D 50 of the abrasive grains can be measured using a commercially available particle size measuring device.
  • a particle size measuring apparatus may be based on any method such as a dynamic light scattering method, a laser diffraction method, a laser scattering method, or a pore electrical resistance method.
  • a measuring method and apparatus for D 50 include measuring method and apparatus of example.
  • the lower limit of the content of abrasive grains in the polishing composition is preferably 0.1% by mass or more, more preferably 5% by mass or more, and further preferably 10% by mass or more. As the abrasive content increases, the polishing rate increases.
  • the upper limit of the content of abrasive grains in the polishing composition is preferably 50% by mass or less, and more preferably 40% by mass or less. As the abrasive grain content decreases, the manufacturing cost of the polishing composition decreases, and it becomes easy to obtain a surface with few defects such as scratches by polishing using the polishing composition.
  • the polishing composition of the present invention contains a layered silicate compound.
  • the layered silicate compound can exist in a state that causes steric hindrance between the abrasive grains, and thus has an effect of improving the dispersibility and redispersibility of the abrasive grains.
  • the layered silicate compound is basically based on a structure in which silicic acid tetrahedrons are connected in a plane, and the unit structure includes one or two silicic acid tetrahedral sheets and one alumina octahedron sheet. It is a structure characterized by the above. Between the layers (between unit structures), cations such as sodium, potassium and calcium are present.
  • the layered silicate compound is a substance having a property that crystals are peeled off thinly.
  • the layered silicate compound used in the present invention may be a natural product, a synthetic product, a commercial product, or a mixture thereof.
  • Examples of the synthesis method of the layered silicate compound include a hydrothermal synthesis reaction method, a solid phase reaction method, and a melt synthesis method.
  • the layered silicate compound examples include talc, pyrophyllite, smectite (saponite, hectorite, saconite, stevensite, bentonite, montmorillonite, beidellite, nontronite, etc.), vermiculite, mica (gold).
  • mice Mica, biotite, chinwald mica, muscovite, paragonite, ceradonite, sea chlorite, etc.), chlorite (clinochlore, chamosite, nimite, penantite, sudowite, donbasite, etc.), brittle mica (clintonite, margarite, etc.) , Sulite, Serpentine (Antigolite, Lizardite, Chrysotile, Amesite, Clonsteadite, Burcellin, Greenerite, Garnierite, etc.), Kaolin (Kaolinite, Dickite, Nacrite, Halloysite, etc.) That.
  • at least one of bentonite and hectorite is preferable. By being at least one of bentonite and hectorite, the intended effect of the present invention can be more effectively exhibited.
  • these layered silicate compounds may be used alone or in combination of two or more.
  • the interlayer ions are cation compounds, and the interlayer ions are sodium ions.
  • Bentonite sodium bentonite
  • hectorite sodium hectorite
  • mica sodium tetrasilicon mica
  • bentonite sodium bentonite whose interlayer ion is sodium ion is more preferred.
  • the lower limit of the content of the layered silicate compound in the polishing composition is preferably 0.01% by mass or more, and more preferably 0.1% by mass or more. Moreover, it is preferable that the upper limit of content of the layered silicate compound in polishing composition is 5 mass% or less, and it is more preferable that it is 2 mass% or less. Within such a range, the effect of the present invention can be obtained efficiently.
  • the polishing composition according to the present invention contains a dispersion medium for dispersing each component.
  • a dispersion medium for dispersing each component.
  • water is preferable. From the viewpoint of suppressing the inhibition of the action of other components, water containing as little impurities as possible is preferable.
  • pure water from which foreign matters are removed through a filter is used. Water, ultrapure water, or distilled water is preferred.
  • the lower limit of the pH of the polishing composition of the present invention is not particularly limited, but is preferably 2.0 or more, more preferably 2.3 or more, and even more preferably 2.5 or more.
  • the upper limit of the pH is not particularly limited, but is preferably 12.0 or less, more preferably 10.0 or less, further preferably 7.0 or less, and 4.0 or less. It is particularly preferred.
  • pH is 2.0 or more and 7.0 or less.
  • the layered silicate compound is characterized in that the surface charge of the crystal end face varies depending on the pH band. In particular, when the pH is in the range of 2.0 or more and 7.0 or less, the brass charge gradually takes on as the surface charge on the crystal end face becomes the acid side.
  • the crystal layer surface is negatively charged regardless of the pH, the surface charge of the crystal end surface of the layered silicate compound and the negative portion of the crystal layer surface are attracted to form a card house structure. Since these are dispersed in a colloidal state, they become a three-dimensional barrier against abrasive grains. Therefore, the effect of improving the dispersibility of the abrasive grains can be obtained.
  • the pH is in the range of more than 7.0 and 12.0 or less, both the crystal end face and the crystal layer face of the layered silicate compound are negatively charged and repelled and dispersed. Since these are also dispersed in a colloidal state, an effect of becoming a three-dimensional barrier against abrasive grains and improving dispersibility can be obtained.
  • the pH is preferably 7.0 or less from the viewpoint of reducing the content of the layered silicate compound. Is preferably pH 2.0 or more.
  • the polishing rate is high when the pH is in the acidic region.
  • the object to be polished is a resin material, it is preferable that the pH is in the acidic region, as described above, because the polishing rate is increased.
  • the polishing composition When the polishing composition has an alkaline pH range, the dispersibility and / or redispersibility of the abrasive grains can be improved by increasing the amount of the layered silicate compound added. From the viewpoint of improving the dispersibility and / or redispersibility of the abrasive grains by reducing the amount of the layered silicate compound added, the polishing composition preferably has an acidic pH range. That is, the pH of the polishing composition of the present invention is more preferably 2.0 or more and 7.0 or less.
  • the layered silicate compound has a negative charge on the surface of the layer, if the pH is in the acidic region, the abrasive grains and the layered silicate compound can easily form a three-dimensional structure, and the layered silicate compound Even if the addition amount is small, it is considered that the dispersibility and / or redispersibility of the abrasive grains is likely to be improved.
  • the pH of the polishing composition can be adjusted by adding an acid or a salt thereof, or a base or a salt thereof described below.
  • the polishing composition of the present invention preferably contains an acid or a salt thereof.
  • the acid or a salt thereof serves to adjust the pH of the polishing composition.
  • an inorganic acid either an inorganic acid or an organic acid can be used.
  • inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid.
  • organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n -Heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, Maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid, diglycolic acid, 2-furancarboxylic acid, 2,5-furandicarboxylic acid, 3-furancarboxylic acid, 2-tetrahydrofurancarboxylic acid, methoxyacetic acid,
  • examples of the salt include a group 1 element salt, a group 2 element salt, an aluminum salt, an ammonium salt, an amine salt, and a quaternary ammonium salt. These acids or salts thereof can be used alone or in combination. Among these, nitric acid and citric acid are preferable.
  • the content of the acid or its salt in the polishing composition may be appropriately adjusted so as to be in the above pH range.
  • Base or salt thereof In order to adjust to the above pH range, a base or a salt thereof may be used.
  • bases or salts thereof include amines such as aliphatic amines and aromatic amines, organic bases such as quaternary ammonium hydroxide, alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, magnesium hydroxide, Examples include Group 2 element hydroxides such as calcium hydroxide, and ammonia.
  • the content of the base or salt thereof in the polishing composition may be appropriately adjusted so as to be in the above pH range.
  • the polishing composition of the present invention suppresses the corrosion of the polishing target, an oxidizing agent that oxidizes the surface of the polishing target, a water-soluble polymer that acts on the surface of the polishing target and the surface of the abrasive grains, if necessary.
  • You may further contain other components, such as anticorrosive, a chelating agent, the preservative which has another function, and an antifungal agent.
  • oxidizing agent examples include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, perchlorate, persulfate and the like.
  • water-soluble polymers examples include polycarboxylic acids such as polyacrylic acid, polysulfonic acids such as polyphosphonic acid and polystyrene sulfonic acid, polysaccharides such as chitansan gum and sodium alginate, cellulose derivatives such as hydroxyethyl cellulose and carboxymethyl cellulose, polyethylene glycol , Polyvinyl alcohol, polyvinyl pyrrolidone, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, sorbitan monooleate, oxyalkylene polymers having a single kind or plural kinds of oxyalkylene units.
  • the salt of said compound can also be used suitably as a water-soluble polymer.
  • anticorrosive examples include amines, pyridines, tetraphenylphosphonium salts, benzotriazoles, triazoles, tetrazoles, benzoic acid and the like.
  • chelating agents include carboxylic acid chelating agents such as gluconic acid, amine chelating agents such as ethylenediamine, diethylenetriamine, and trimethyltetraamine, ethylenediaminetetraacetic acid, nitrilotriacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraminehexaacetic acid.
  • Polyaminopolycarboxylic chelating agents such as diethylenetriaminepentaacetic acid, 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta ( Methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, methanehydroxyphosphonic acid, 1-phosphonobutane-2,3,4-to Organophosphonic acid chelating agents such as carboxylic acid, phenol derivatives, 1,3-diketones and the like.
  • preservatives include sodium hypochlorite and the like.
  • antifungal agents include oxazolines such as oxazolidine-2,5-dione.
  • the method for producing the polishing composition of the present invention is not particularly limited, and can be obtained, for example, by stirring and mixing abrasive grains, a layered silicate compound, and other components as necessary in a dispersion medium. it can.
  • the temperature at which each component is mixed is not particularly limited, but is preferably 10 ° C. or higher and 40 ° C. or lower, and may be heated to increase the dissolution rate. Further, the mixing time is not particularly limited.
  • the polishing composition of the present invention is suitably used for polishing an object to be polished containing an alloy material and / or a resin material.
  • polishing an object to be polished using the polishing composition of the present invention can be performed using an apparatus and conditions used for normal metal polishing.
  • a general polishing apparatus there are a single-side polishing apparatus and a double-side polishing apparatus.
  • a polishing object preferably a substrate-shaped polishing object
  • a carrier a holding tool used for polishing.
  • One surface of the polishing object is polished by rotating the surface plate by pressing a surface plate having a polishing cloth affixed to one surface of the object to be polished while supplying the composition for polishing.
  • a polishing object is held using a holder called a carrier, and a polishing plate is pressed against a surface opposite to the polishing object while a polishing composition is supplied from above, and these are pressed.
  • the both sides of the object to be polished are polished by rotating in a relative direction.
  • the polishing is performed by a physical action caused by friction between the polishing pad and the polishing composition and the object to be polished, and a chemical action that the polishing composition brings to the object to be polished.
  • An example of the polishing condition in the polishing method according to the present invention is a polishing load.
  • the lower limit of the polishing load in the polishing method according to the present invention is not particularly limited, is preferably 20 g / cm 2 or more, more preferably 50 g / cm 2 or more.
  • the upper limit of the polishing load is preferably 1000 g / cm 2 or less, and more preferably 500 g / cm 2 or less. As the polishing load decreases, surface roughness of the polished surface is suppressed.
  • a linear velocity in polishing (polishing linear velocity) can be mentioned.
  • the number of rotations of the polishing pad, the number of rotations of the carrier, the size of the object to be polished, the number of objects to be polished affect the linear velocity, but if the linear velocity is high, the frictional force applied to the object to be polished increases.
  • the object is easily mechanically polished.
  • frictional heat is generated by friction, and chemical action by the polishing composition may be increased.
  • the lower limit of the polishing linear velocity in the polishing method according to the present invention is not particularly limited, but is preferably 10 m / min or more, and more preferably 20 m / min or more.
  • the upper limit of the polishing linear velocity is preferably 300 m / min or less, and more preferably 150 m / min or less. Within this range, in addition to obtaining a sufficiently high polishing rate, an appropriate frictional force can be imparted to the object to be polished. That is, in the present invention, the polishing linear velocity is preferably 10 m / min or more and 300 m / min or less, and more preferably 20 m / min or more and 150 m / min or less.
  • the polishing pad used in the polishing method using the polishing composition of the present invention is different in material properties such as polyurethane type, polyurethane foam type, nonwoven fabric type, suede type, etc., as well as differences in physical properties such as hardness and thickness. Further, there are various types including those containing abrasive grains and those containing no abrasive grains, and these can be used without limitation.
  • the polishing method according to the present invention can have a final polishing step using another polishing composition after the polishing step.
  • the finish polishing composition used in the finish polishing step will be described.
  • the abrasive grains contained in the finish polishing composition are preferably silicon oxide (silica), aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, or silicon nitride.
  • silicon oxide (silica) is preferable, and specific examples include colloidal silica, fumed silica, and sol-gel silica. Among them, fumed silica or colloidal silica is preferable from the viewpoint of obtaining the smoothness of the alloy surface more efficiently. Of these, at least one of aluminum oxide and silicon carbide is more preferable.
  • colloidal silica As a method for producing colloidal silica, known methods may be mentioned. For example, a method by hydrolysis of alkoxysilane described in pages 154 to 156 of “Science of Sol-Gel Method” by Sakuhana Sakuo (published by Agne Jofusha); described in JP-A-11-60232; A method of reacting methyl silicate and water by dropping methyl silicate or a mixture of methyl silicate and methanol into water, methanol and ammonia, or a mixed solvent composed of ammonia and an ammonium salt; A method described in Japanese Patent No.
  • fumed silica As a method for producing fumed silica, a known method using a gas phase reaction in which silicon tetrachloride is vaporized and burned in an oxyhydrogen flame can be mentioned. Further, fumed silica can be made into an aqueous dispersion by a known method. Examples of methods for making an aqueous dispersion include, for example, JP-A-2004-43298, JP-A-2003-176123, and JP-A-2002. And the method described in Japanese Patent No. 309239.
  • the average primary particle diameter of the abrasive grains contained in the final polishing composition is preferably 5 nm or more, more preferably 10 nm or more, and further preferably 15 nm or more. When the average primary particle diameter of the abrasive grains is within the above range, the polishing rate of the object to be polished is improved.
  • the average primary particle diameter of the abrasive grains contained in the finish polishing composition is preferably 400 nm or less, more preferably 300 nm or less, further preferably 200 nm or less, and preferably 100 nm or less. Most preferred. When the average primary particle diameter of the abrasive grains is within the above range, it is easy to obtain a surface with low defects and low surface roughness.
  • the average primary particle diameter of the abrasive grains contained in the final polishing composition can be calculated from the measured value of the specific surface area by the nitrogen adsorption method (BET method).
  • the content of the abrasive grains in the finish polishing composition is preferably 1% by mass or more, and more preferably 2% by mass or more.
  • content of an abrasive grain exists in said range the grinding
  • the content of the abrasive grains in the finish polishing composition is preferably 50% by mass or less, and more preferably 40% by mass or less.
  • the content of the abrasive grains is within the above range, it is easy to obtain a polished surface with few scratches in addition to reducing the production cost of the finish polishing composition.
  • the amount of abrasive grains remaining on the surface of the polished object after polishing is reduced, and the surface cleanliness is improved.
  • the pH of the final polishing composition varies depending on the type of polishing object to be polished.
  • the pH in the finish polishing composition is adjusted with a known acid, base, or salt thereof.
  • bases include amines such as aliphatic amines and aromatic amines, organic bases such as quaternary ammonium hydroxide, alkali metal hydroxides such as potassium hydroxide, alkaline earth metal hydroxides, and ammonia.
  • potassium hydroxide or ammonia is preferable from the viewpoint of availability.
  • the lower limit of the pH of the finish polishing composition is preferably 2 or more, and more preferably 8 or more. As the pH of the finish polishing composition increases, the dispersibility of abrasive grains (for example, silica particles) improves. Further, the upper limit of the pH of the finish polishing composition is preferably 12.0 or less, and more preferably 11.5 or less. As the pH of the finish polishing composition decreases, the safety of the finish polishing composition is further improved, and it is also preferable from an economic viewpoint.
  • the finish polishing composition is an oxidant that oxidizes the surface of the polishing object, if necessary, a water-soluble polymer that acts on the surface of the polishing object or the abrasive grain surface, You may further contain other components, such as anticorrosive agent and chelating agent which suppress corrosion of a grinding
  • the polishing composition once used for polishing can be recovered and used again for polishing.
  • a method for reusing the polishing composition there is a method in which the polishing composition discharged from the polishing apparatus is collected in a tank and is circulated again into the polishing apparatus. Recycling the polishing composition can reduce the environmental load by reducing the amount of polishing composition discharged as waste liquid, and reduce the amount of polishing composition to be used by reducing the amount of polishing composition to be used. This is useful in that the manufacturing cost for polishing can be suppressed.
  • the polishing composition of the present invention When the polishing composition of the present invention is recycled, some or all of abrasive grains, layered silicate compounds, and other additives consumed and lost by polishing are being used as a composition modifier. Can be added. In this case, as a composition regulator, it is good also as what mixed a part or all of an abrasive grain, a layered silicate compound, and another additive by arbitrary mixing ratios.
  • a composition adjusting agent By additionally adding a composition adjusting agent, the polishing composition is adjusted to a composition suitable for reuse, and polishing is suitably maintained.
  • the concentration of the abrasive grains, layered silicate compound, and other additives contained in the composition modifier is arbitrary and is not particularly limited, but may be appropriately adjusted according to the size of the circulation tank and the polishing conditions. preferable.
  • the polishing composition of the present invention may be a one-component type or a multi-component type including a two-component type.
  • the polishing composition of the present invention may be prepared by diluting the stock solution of the polishing composition, for example, 10 times or more using a diluent such as water.
  • Preparation of polishing composition Dilute with water so that the abrasive grains have a content of 30% by mass, and add the dispersant (layered silicate compound or other compound in place thereof) to a content of 0.5% by mass at room temperature ( 25 ° C.) to prepare a dispersion. Next, citric acid or nitric acid was added as an acid to the dispersion, and the pH was adjusted to the values shown in Tables 1 to 6 below while confirming with a pH meter.
  • dispersant layered silicate compound or other compound in place thereof
  • Aluminum oxide ⁇ -ized 90 to 100% (The ⁇ -oxidized rate of aluminum oxide particles was measured by X-ray diffraction measurement using an X-ray analyzer (Ultima-IV, manufactured by Rigaku Corporation). (Calculated from the integrated intensity ratio) Silicon carbide: GC # 3000 (D 50: 4.0 ⁇ m), GC # 1200 (D 50: 9.9 ⁇ m) The D 50 of the abrasive grains was measured by a pore electrical resistance method using Multisizer III (manufactured by Beckman Coulter, Inc.).
  • the polishing composition was put in a 100 ml colorimetric tube (manufactured by AS ONE Co., Ltd.) up to a scale of 100 ml and allowed to stand for 1 hour. After standing, how much the height of the interface between the abrasive layer and the supernatant liquid was lowered compared with that before standing, and the number of scales lowered was measured. The smaller this value, the better the dispersibility.
  • polishing composition of each Example and each Comparative Example was used for polishing under the following polishing conditions, and the polishing rate was determined. Further, the surface roughness of each polished object after polishing was measured by the following method.
  • Polishing device Single-side polishing device (plate diameter 380mm) Polishing pad: Non-woven fabric type (with grooves) Polishing load: 150 g / cm 2 Plate rotation speed: 50 rpm Polishing linear velocity: 30 m / min Polishing time: 8 min Supply rate of polishing composition: 35 ml / min.
  • Al alloy 7000 series One substrate having a size of 5.0 cm ⁇ 5.0 cm square and a thickness of 5 mm was set in the polishing apparatus.
  • SUS304 Three substrates having a diameter of 1 inch and a thickness of 5 mm were set on the surface of the circular jig of the polishing apparatus at equal intervals in the rotation direction.
  • Polycarbonate resin siloxane copolymer grade, AG1950: Three substrates having a size of 3.2 cm ⁇ 3.2 cm square and a thickness of 5 mm were set at equal intervals in the rotation direction on the surface of the circular jig of the polishing apparatus.
  • the polishing rate was calculated from the difference in mass of the polishing object before and after polishing.
  • ⁇ Surface roughness Ra> The surface roughness Ra of the polished object after polishing was measured using a non-contact surface shape measuring instrument (laser microscope, VK-X200, manufactured by Keyence Corporation).
  • the surface roughness Ra is a parameter indicating an average amplitude in the height direction of the roughness curve, and indicates an arithmetic average of the height of the surface of the polishing object within a fixed visual field.
  • the measurement range by the non-contact surface shape measuring device was 285 ⁇ m ⁇ 210 ⁇ m.
  • Example 1 Compared with the comparative examples using other dispersants (Comparative Examples 2 to 6 in Table 1 and Comparative Examples 8 to 15 in Table 2), the polishing composition of Example 1 maintained the polishing performance. It was found that the redispersibility of the abrasive grains was also improved.
  • the polishing composition containing the layered silicate compound of the example was compared with the polishing composition of the comparative example to which the layered silicate compound was not added at various pHs. It was found that the dispersibility of the abrasive grains was improved while maintaining the polishing performance. Further, it was found that the polishing compositions of Examples 6 and 9 also improved the redispersibility of the abrasive grains as compared with Comparative Examples (Comparative Examples 17 and 18) having the same pH.
  • polishing compositions of the Examples were found to improve abrasive grains dispersible. Compared with the polishing composition of Comparative Example 19, the polishing composition of Example 10 also improved the redispersibility of the abrasive grains.
  • Silicon carbide Silicon carbide, polishing object
  • Silicon carbide was used as the abrasive grains, and the dispersibility, redispersibility, and polishing performance were evaluated. The evaluation results are shown in Table 5 below.
  • polishing performance was evaluated by changing various objects to be polished.
  • the polishing composition used is the polishing composition of Example 2 and Comparative Example 7.
  • the results of Example 2 and Comparative Example 7 are also shown.
  • the evaluation results are shown in Table 6 below.
  • the polishing compositions of the examples improved the dispersibility of the abrasive grains while maintaining the polishing performance.
  • the polishing composition of Example 12 also improved the redispersibility of the abrasive grains.
  • the polishing composition of Example 2 was more effective than the polishing composition of Comparative Example 7 while maintaining the polishing performance for various objects to be polished. It turned out that it becomes a composition which the dispersibility of the grain improved remarkably.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

[Problème] Fournir un moyen pour améliorer la dispersibilité de grains abrasifs tout en maintenant les performances de polissage, et fournir un moyen pour améliorer la redispersibilité de grains abrasifs tout en maintenant les performances de polissage. [Solution] Une composition de polissage qui comprend des grains abrasifs, un composé de phyllosilicate et un milieu de dispersion.
PCT/JP2017/006954 2016-04-26 2017-02-23 Composition de polissage WO2017187749A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-088407 2016-04-26
JP2016088407 2016-04-26
JP2016185783A JP6099067B1 (ja) 2016-04-26 2016-09-23 研磨用組成物
JP2016-185783 2016-09-23

Publications (1)

Publication Number Publication Date
WO2017187749A1 true WO2017187749A1 (fr) 2017-11-02

Family

ID=58363160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/006954 WO2017187749A1 (fr) 2016-04-26 2017-02-23 Composition de polissage

Country Status (4)

Country Link
JP (1) JP6099067B1 (fr)
CN (1) CN106811176A (fr)
TW (1) TWI822654B (fr)
WO (1) WO2017187749A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018123875A1 (fr) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage
WO2024024413A1 (fr) * 2022-07-26 2024-02-01 株式会社フジミインコーポレーテッド Composition de polissage
WO2024139039A1 (fr) * 2022-12-27 2024-07-04 昂士特科技(深圳)有限公司 Composition de polissage mécano-chimique (cmp) pour alliage métallique

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6982427B2 (ja) * 2017-07-25 2021-12-17 花王株式会社 シリカスラリー
JPWO2019066014A1 (ja) * 2017-09-29 2020-11-26 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、および研磨方法
CN108690508A (zh) * 2018-07-16 2018-10-23 江西汇诺科技有限公司 一种抛光液领域特效悬浮剂及其制备方法
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
JP7139299B2 (ja) * 2019-10-01 2022-09-20 エスケーシー ソルミックス カンパニー,リミテッド 研磨パッド、その製造方法及びそれを用いた研磨方法
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
CN112778912A (zh) * 2021-02-22 2021-05-11 广东纳德新材料有限公司 一种抛光液及其制备方法、应用
CN117733719B (zh) * 2024-02-21 2024-05-03 北京特思迪半导体设备有限公司 一种锑化镓晶片的抛光方法及所制备的锑化镓抛光片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297062A (ja) * 1986-06-16 1987-12-24 Yushiro Chem Ind Co Ltd ラツプ剤組成物およびその製造方法
JPH08209117A (ja) * 1995-02-07 1996-08-13 Nippon Yuka Kogyo Kk 研磨洗浄用懸濁液組成物及びガラス面の洗浄方法
JP2000017251A (ja) * 1998-07-01 2000-01-18 Neos Co Ltd 研磨用水性組成物
JP2008502776A (ja) * 2004-06-14 2008-01-31 アムコル・インターナショナル・コーポレーション 粘土及びCeO2の研磨粒子を含むスラリーの化学的−機械的研磨(CMP)と表面を平坦化する方法
JP2011507998A (ja) * 2007-12-22 2011-03-10 エボニック デグサ ゲーエムベーハー 酸化セリウム及び層状シリケートを含有する分散液
JP2015203080A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB296195A (en) * 1927-08-30 1928-08-30 Henry Robert Power Chemist Improvements in abrasive compositions
US3462251A (en) * 1965-10-08 1969-08-19 Ford Motor Co Aqueous based lapping composition
US3618272A (en) * 1965-10-08 1971-11-09 Ford Motor Co Process for lapping hypoid gearsets
JPS56145968A (en) * 1980-04-14 1981-11-13 Yushiro Do Brazil Ind Chem Ltd Lapping compound
DE19916155A1 (de) * 1999-04-11 2000-11-16 Orochemie Duerr & Pflug Gmbh & Suspension zur Behandlung natürlichen Hartgewebes
JP2004165424A (ja) * 2002-11-13 2004-06-10 Ekc Technology Inc 研磨剤組成物とそれによる研磨方法
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
DE102007008279A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Ceroxid und Schichtsilikat enthaltende Dispersion
JP2011001515A (ja) * 2009-06-22 2011-01-06 Mitsui Mining & Smelting Co Ltd 研摩材組成物粉末及び研摩材組成物スラリー
CN103451658B (zh) * 2013-08-23 2015-05-27 苏州长盛机电有限公司 一种环保金属抛光剂及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297062A (ja) * 1986-06-16 1987-12-24 Yushiro Chem Ind Co Ltd ラツプ剤組成物およびその製造方法
JPH08209117A (ja) * 1995-02-07 1996-08-13 Nippon Yuka Kogyo Kk 研磨洗浄用懸濁液組成物及びガラス面の洗浄方法
JP2000017251A (ja) * 1998-07-01 2000-01-18 Neos Co Ltd 研磨用水性組成物
JP2008502776A (ja) * 2004-06-14 2008-01-31 アムコル・インターナショナル・コーポレーション 粘土及びCeO2の研磨粒子を含むスラリーの化学的−機械的研磨(CMP)と表面を平坦化する方法
JP2011507998A (ja) * 2007-12-22 2011-03-10 エボニック デグサ ゲーエムベーハー 酸化セリウム及び層状シリケートを含有する分散液
JP2015203080A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018123875A1 (fr) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage
JPWO2018123875A1 (ja) * 2016-12-26 2019-11-14 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
EP3561858A4 (fr) * 2016-12-26 2020-01-01 Fujimi Incorporated Composition de polissage et procédé de polissage
JP7197366B2 (ja) 2016-12-26 2022-12-27 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US11781039B2 (en) 2016-12-26 2023-10-10 Fujimi Incorporated Polishing composition and polishing method
WO2024024413A1 (fr) * 2022-07-26 2024-02-01 株式会社フジミインコーポレーテッド Composition de polissage
WO2024139039A1 (fr) * 2022-12-27 2024-07-04 昂士特科技(深圳)有限公司 Composition de polissage mécano-chimique (cmp) pour alliage métallique

Also Published As

Publication number Publication date
TW201738353A (zh) 2017-11-01
JP6099067B1 (ja) 2017-03-22
JP2017197708A (ja) 2017-11-02
CN106811176A (zh) 2017-06-09
TWI822654B (zh) 2023-11-21

Similar Documents

Publication Publication Date Title
JP6099067B1 (ja) 研磨用組成物
JP6151711B2 (ja) 研磨用組成物
JP6010043B2 (ja) ポリシリコンの研磨用組成物及び研磨方法
TW201542792A (zh) 研磨用組成物
TWI277646B (en) Methods for machining ceramics
TW201000403A (en) Aluminum oxide particle and polishing composition containing the same
TW201315849A (zh) 碳化矽單晶基板及研磨液
KR20160141805A (ko) 경질 재료의 연마용 조성물
TW200845167A (en) Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
US20140308155A1 (en) Method for polishing alloy material and method for producing alloy material
CN110168702B (zh) 研磨用组合物及研磨方法
JP5491530B2 (ja) ニッケル−リンメモリーディスク用の研磨組成物
JP2016094510A (ja) 研磨用組成物およびそれを用いた基板の製造方法
JPWO2015019820A1 (ja) 研磨用組成物
TWI614093B (zh) 研磨用組成物、合金材料、合金材料之硏磨方法及合金材料之製造方法
WO2012132106A1 (fr) Boue de polissage et procédé de polissage avec celle-ci
JP3997154B2 (ja) 研磨液組成物
JP2018075700A (ja) 物品の製造方法
JP2009181690A (ja) 基板の製造方法
CN1561376A (zh) 抛光组合物
JP2005001018A (ja) 基板の製造方法
JP2024016448A (ja) 研磨用組成物
JP2006346789A (ja) 薄膜磁気ヘッド用研磨液

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17789038

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17789038

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载