+

WO2016137019A1 - Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie - Google Patents

Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie Download PDF

Info

Publication number
WO2016137019A1
WO2016137019A1 PCT/KR2015/001679 KR2015001679W WO2016137019A1 WO 2016137019 A1 WO2016137019 A1 WO 2016137019A1 KR 2015001679 W KR2015001679 W KR 2015001679W WO 2016137019 A1 WO2016137019 A1 WO 2016137019A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
transistor array
layer
chromatography
Prior art date
Application number
PCT/KR2015/001679
Other languages
English (en)
Korean (ko)
Inventor
조규진
김유신
선준봉
이우규
노진수
Original Assignee
순천대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 순천대학교 산학협력단 filed Critical 순천대학교 산학협력단
Priority to PCT/KR2015/001679 priority Critical patent/WO2016137019A1/fr
Publication of WO2016137019A1 publication Critical patent/WO2016137019A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
    • B01D15/08—Selective adsorption, e.g. chromatography
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/62—Detectors specially adapted therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/88—Integrated analysis systems specially adapted therefor, not covered by a single one of the groups G01N30/04 - G01N30/86
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Definitions

  • the present invention uses a thin film transistor array that can be manufactured by a roll-to-roll gravure printing process that can be mass-produced at low cost instead of a thin film transistor manufactured through a semiconductor manufacturing process.
  • the present invention relates to a sensor capable of monitoring organic matter analysis in digital values and analyzing organic matter, a chromatographic apparatus including the sensor, and a method of manufacturing the sensor.
  • chromatographic apparatuses such as thin layer chromatography, column chromatography or high performance liquid chromatography (HPLC) require a means for monitoring the separation state of organic matter.
  • an absorbance detection method for detecting a separation state of an analyte sample according to a difference in ultraviolet absorption characteristics of an analyte sample, and a difference in fluorescence emission characteristics of an analyte sample Fluorescence detection method for detecting the separation situation, electrochemical detection method for detecting the separation condition of the sample under the difference of the electrochemical characteristics of the sample to be analyzed, or parallax for detecting the separation condition of the sample under measurement by measuring the differential refractive index Refractive index detection methods and the like are used, these detection methods have a problem that is expensive.
  • the present invention when applied to a thin film chromatography, column chromatography or high performance liquid chromatography (HPLC) that can separate and analyze a mixture of two or more organic substances in each component, by digitizing in real time To provide a sensor that can be monitored and manufactured at low cost.
  • HPLC high performance liquid chromatography
  • Another object of the present invention is to provide a chromatography apparatus capable of digitizing and monitoring a separated organic material in real time.
  • Another object of the present invention is to provide a method for mass production of low-cost sensors capable of digitizing and monitoring separated organics in real time.
  • the present invention is disposed in a column for chromatography, a sensor for tracking the separation of organic matter, the sensor is formed on the substrate and the substrate, the gate layer, dielectric layer, active layer, insulation
  • a thin film transistor comprising a layer and a source / drain layer and formed by a printing process, the thin film transistor array having an M ⁇ N array, wherein the thin film transistor array is protected from an organic material for analysis on the surface of the thin film transistor array.
  • a digital monitoring sensor for a chromatography device characterized in that a passivation layer is formed.
  • the present invention provides a thin film transistor array in which a column for chromatography, a thin film transistor element arranged inside the chromatography column, is arranged in an M ⁇ N arrangement, and a surface of the thin film transistor array. And a passivation layer formed to protect the thin film transistor array from the organic material for analysis, wherein the passivation layer may exert dipole attraction with the organic material to be separated and include a material having a lower wettability than the organic material to be separated.
  • a chromatographic apparatus is provided.
  • this invention forms the gate layer, the dielectric layer, the active layer, the insulating layer, and the source / drain layer on a board
  • the senor according to the present invention forms a thin film transistor array through a printing process, it can be mass-produced at low cost, and is reached by the attraction difference between the mobile phase and the stationary phase through the thin film transistor array protected from the organic material for analysis through a passivation layer. Detects changes in the electrical properties of materials with different speeds and generates electrical signals, allowing digital separation and monitoring of chromatographic separation processes (e.g., the flow position and velocity of liquids as mobile phases). .
  • the chromatographic apparatus according to the present invention can monitor the separation process of analyte organics through a thin film transistor array, and in the chromatographic apparatus according to the present invention, wetting is easy while increasing the flow characteristics of the mobile phase and the analyte.
  • the passivation layer is provided to protect the thin film transistor array without being made, thereby increasing the efficiency of the chromatographic analysis.
  • the manufacturing method of the sensor according to the present invention since all processes including the thin film transistor array and the passivation layer are formed through the printing process, the low temperature and the atmospheric pressure process are possible, thereby greatly reducing the manufacturing cost of the manufactured sensor. For example, large-scale production may be possible.
  • FIG. 1 is a view of a sensor for a chromatographic apparatus according to an embodiment of the present invention and a partially enlarged view thereof.
  • FIG. 2 is a cross-sectional view of a thin film transistor constituting a sensor for a chromatography device according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a thin film transistor and a passivation layer constituting a sensor for a chromatography device according to an embodiment of the present invention.
  • FIG. 4 is a schematic view of a chromatography apparatus according to an embodiment of the present invention.
  • FIG. 5 is a manufacturing process diagram of a sensor for a chromatographic apparatus according to an embodiment of the present invention.
  • Figure 6 is a roll-to-roll gravure equipment picture used in the present invention.
  • the digital monitoring sensor for a chromatographic apparatus is a sensor for tracking the separation state of an organic substance, which is disposed where the organic substance of the chromatography apparatus is separated, wherein the sensor is formed on a substrate and the substrate.
  • a thin film transistor including a gate layer, a dielectric layer, an active layer, an insulating layer, and a source / drain layer, and formed through a printing process, including a thin film transistor array having an array of M ⁇ N arrays.
  • a passivation layer is formed that can protect the thin film transistor array from an organic material.
  • the substrate is preferably made of a material that can give flexibility, such as a polymer material or a metal material, and a film made of a synthetic resin, which is light, inexpensive and excellent in flexibility.
  • a material that can give flexibility such as a polymer material or a metal material
  • a film made of a synthetic resin which is light, inexpensive and excellent in flexibility.
  • the film made of a synthetic resin material can be used without limitation as long as it has physical properties that can be used in a chromatography device.
  • PET polyethylene terephtalate
  • PM poly (methyl methacrylate)
  • PC Materials such as Polycarbonate
  • the thin film transistor may have a bottom gate structure in which a gate layer is disposed below, and a top gate structure in which the gate layer is disposed above.
  • the gate layer As the respective materials constituting the gate layer, the dielectric layer, the active layer, the insulating layer, and the source / drain layer constituting the thin film transistor, all known transistor materials may be used.
  • the active layer if necessary for the analysis of the organic compound, may be formed in one kind, or a thin film transistor array may be manufactured using two or more materials.
  • All of the thin film transistor arrays may be formed by a printing process.
  • a large area thin film transistor array may be formed at low cost.
  • the passivation layer is a material capable of generating a strong dipole moment with a material to be analyzed and having a low wetting angle compared to the material to be analyzed, while protecting the thin film transistor array.
  • cytop As a material which can be used for the passivation layer, for example, cytop.
  • the flow rate of the organic material can be controlled by controlling the shape of the passivation layer (for example, grid shape, protrusion pattern shape, etc.), the optimum flow rate is derived by controlling the shape to more precisely determine the flow rate. Analysis can be made possible.
  • shape of the passivation layer for example, grid shape, protrusion pattern shape, etc.
  • a chromatography apparatus includes a thin film transistor array in which a column for chromatography, a thin film transistor element disposed on one side of the chromatography column, is arranged in an M ⁇ N array, and a surface of the thin film transistor array. And a passivation layer formed to protect the thin film transistor array from the organic material for analysis.
  • the column is generally a tubular vessel used in a chromatography apparatus, which is generally made of a transparent material and is made of a material such as glass in which mass transfer inside can be observed from the outside.
  • the substrate of the sensor including the thin film transistor array and the passivation layer is attached to the inside of the column, the output terminal of the sensor is located near the injection port of the column to output the change of the electrical signal generated in the thin film transistor array to the outside It is.
  • the chromatography apparatus may further include a controller capable of processing a signal output from the sensor to control a variable, such as a pressure applied to a column of the chromatography apparatus, by means of this configuration. Based on the separated state of the organic matter, the pressure applied to the column and the separation rate of the organic matter can be optimized in real time.
  • each layer of a gate layer, a dielectric layer, an active layer, an insulating layer, and a source / drain layer is formed on a substrate through a printing process, and each layer is formed.
  • the thin film transistor forms a thin film transistor array consisting of M ⁇ N arrays and forms a passivation layer that protects the thin film transistor array from organic material by printing on the thin film transistor array. It features.
  • the manufacturing process of the thin film transistor array may use a method of forming a gate layer, a dielectric layer, an active layer, an insulating layer, and a source / drain layer on a substrate using an inkjet, or may use a roll-to-roll gravure printing process.
  • the roll-to-roll gravure process is more preferable for mass production.
  • the heat treatment process may be performed by using an oven after each layer is printed, according to the type of printing ink used in each layer, about 150 °C for the gate layer, about 100 °C for the dielectric layer, insulation layer
  • the source / drain layer may be carried out at about 150 °C
  • the active layer may be carried out a heat treatment process at a temperature of a wider range than the above temperature according to the type of ink used.
  • FIG. 1 is a view of a chromatographic device sensor and a partially enlarged view thereof according to an embodiment of the present invention
  • Figure 2 is a cross-sectional view of a thin film transistor constituting a sensor for a chromatography device according to an embodiment of the present invention
  • 3 is a schematic diagram of a thin film transistor and a passivation layer constituting a sensor for a chromatography device according to an embodiment of the present invention.
  • a sensor 10 for a chromatography apparatus has a substrate 11 and an N ⁇ M having a bottom gate structure formed on the substrate 11. And a passivation layer 13 formed on the thin film transistor array.
  • the substrate 10 is made of a transparent polyethylene terephtalate (PET) film having a thickness of 50 ⁇ 100 ⁇ m and has a shape extending in the longitudinal direction.
  • PET polyethylene terephtalate
  • the thin film transistor array 12 is formed on a substrate 11 extending in the longitudinal direction. Each transistor constituting the thin film transistor array 12 is formed on the substrate 11 and contains silver (Ag) as a main component.
  • a gate layer 12a made of a material, a dielectric layer 12b formed on the gate layer 12a and formed of a dielectric ink having a dielectric constant of 10 or more, and carbon nanotubes formed on the dielectric layer 12b.
  • An active layer 12c comprising a material and a source / drain layer 12d formed of a material containing silver (Ag) as a main component on the active layer 12c.
  • a plurality of transistors having a bottom gate structure including an insulating layer formed by using an insulating ink of an epoxy substrate are arranged.
  • the passivation layer 13 is formed on the surface of the thin film transistor array 12 to cover the thin film transistor array 12.
  • the passivation layer 13 is made of a cytop, the thickness of which is preferably 0.3 ⁇ 1 ⁇ m, which is less than 0.3 ⁇ m the electrical characteristic sensitivity is difficult to distinguish the detection material, if it is more than 1 ⁇ m electrical characteristic sensitivity This is because it is difficult to use as a sensor.
  • FIG. 4 is a schematic view of a chromatography apparatus according to an embodiment of the present invention.
  • the chromatographic apparatus 1 includes a column 20 extending in the longitudinal direction and a lengthwise extension attached to an inner circumference of the column. It comprises a sensor 10.
  • the column 20 is formed in a columnar shape, the diameter of the tube is gradually reduced in the lower portion, the outlet is made of a very narrow diameter compared to the upper portion, made of transparent glass.
  • the output of the sensor 10 is located at the upper end of the column 20 so as to output an electrical signal to the outside.
  • the sensor 10 is disposed in most of the longitudinal direction of the column 20, but may be intermittently disposed at one or more of the upper, middle, and lower portions of the column 20 as necessary.
  • the material of the stationary phase 30 which does not move is disposed in the column 20, and the material of the mobile phase 40 is disposed on the upper portion of the column 20, and the organic phase to be analyzed is included in the mobile phase 40.
  • silica gel powder may be used as the stationary phase 30, and a mixture of ethyl acetate / hexane may be used as the mobile phase 40.
  • the chromatography apparatus since the change in the electrical characteristics of the thin film transistor is detected by the separated organic material, the chromatography apparatus according to the embodiment of the present invention changes the electrical change generated through the thin film transistor array to a digital value, thereby separating the organic material. The process can be monitored.
  • the electrical characteristics of the thin film transistor may vary depending on the type of organic material loaded, the type of active layer constituting the thin film transistor array, the thickness of the passivation layer, and the shape thereof.
  • the electrical characteristics of the thin film transistor eg, ion / off ratio, threshold voltage, transconductance, subtreshold swing, etc.
  • the chromatographic apparatus detects a change in electrical characteristics of the thin film transistor array and through this result, it is possible to optimize the pressure applied to the column and the separation rate of the organic compound in real time. It may include a control device.
  • FIG. 5 is a manufacturing process diagram of a sensor for a chromatographic apparatus according to an embodiment of the present invention.
  • Figure 6 is a roll-to-roll gravure equipment picture used in the present invention.
  • a thin film transistor array 12 having a bottom gate structure is formed on a substrate 11, and a passivation layer ( 13) to form.
  • the gate layer 12a is first printed on the PET substrate 11 (S202), and then the dielectric layer 12b is continuously printed (S204). At this time, since the physical properties of the ink constituting the gate layer 12a and the dielectric layer 12b are different, the printing pressure, speed, and blading conditions should be adjusted according to each layer. Print
  • the active layer 12c and the source / drain layer 12d are additionally printed using the mark pattern (S206 and S208).
  • the gate layer is performed at a temperature of 150 ° C., a dielectric layer 100 ° C., an active layer 150 ° C., a source / drain layer, and a wiring layer.
  • the printing process as described above may be performed using an inkjet, but it is preferable to use a roll-to-roll gravure printing apparatus as shown in FIG. 6 because many thin film transistors can be printed at a time.
  • a thin film transistor was manufactured in a 100% printing process using a roll-to-roll gravure printing apparatus.
  • Roll-to-roll gravure printing equipment is a device that prints patterns on the film passing between rolls using a roll-engraved pattern and pressure rolls. Ink consumption also has the advantage.
  • the substrate used in the present invention is PET (polyethylene terephtalate), PET is not only excellent in flexibility, the heat treatment temperature of the printed layer 100 ⁇ 150 °C It is preferred because it has excellent heat resistance.
  • PET polyethylene terephtalate
  • polymer materials such as PMMA, PI, and PC can be suitably used as the substrate material according to the present invention, which combines flexibility and heat resistance.
  • the PET board After mounting the PET substrate in the roll-to-roll gravure printing equipment of FIG. 6, the PET board is sent to the end of the roll-to-roll gravure printing equipment. And control the tension between the PET substrate and the roll-to-roll gravure printing equipment through the control system, the value is set to 5 ⁇ 7kgf.
  • the pattern of the engraved roll engraving and the ink is controlled.
  • the blading condition affects the transfer property of the ink according to the friction force between the printing roll and the blade. Considering the contact angle to minimize the friction, and to avoid the phenomenon of ink leakage other than the pattern, the conditions applied in the embodiment of the present invention was set back blade 5mm, blade 5mm, blade mounting length 11mm, height 41mm.
  • printing preparation is completed by making a printing pressure into 6-8 kg f / cm ⁇ 2> by making a printing roll and a pressure roll contact.
  • An ink used to form a gate layer printed on a PET substrate is Ag ink (PG-007 Paru Co, Korea).
  • An important factor in printing Ag inks is to match the optimum viscosity and surface energy for proper printing on PET substrates.
  • ink conditions are set using various surface active agents or organic solvents.
  • the optimum viscosity and surface tension of Ag ink are 200-500 cP and 40-48 N / m 2 at 6-12 m / min printing speed for roll-to-roll gravure printing.
  • the solvent is added to adjust the viscosity, and ethylene glycol is used, and the surface tension is a low surface tension material such as ethyl acetate to finally tune the ink conditions.
  • the Ag ink is supplied to a plate making roll, and printing is performed at a printing speed of 6 to 8 m / min to form a gate layer.
  • the thickness of the gate layer formed 100-500 nm is preferable.
  • the gate layer thus formed is heat-treated at 150 ° C. through an oven and dried.
  • the gate layer is heat-treated through an oven and then transferred to the place where the insulating layer is printed. At this time, the camera recognizes the gate layer mark printed on the PET substrate and controls the insulating layer to be superimposed thereon.
  • the dielectric layer overlaid on the gate layer used a dielectric ink having a dielectric constant of 10 or more (an ink including BaTiO 3 ).
  • the insulating layer is overprinted on the gate layer, wherein the thickness of the insulating layer is preferably 1 ⁇ m to 3 ⁇ m.
  • the overprinted dielectric layer is heat treated at 100 ° C. through an oven and dried.
  • the active layer is printed.
  • the active layer commercial semiconductor inks such as monolayer carbon nanotubes, PQ12, TIPS-pentacene, P6HT, DNTT, etc. may be used.
  • the monolayer carbon nanotubes may be dispersed in a solvent capable of dispersing them. An ink added with about 4% by weight was used.
  • the thickness of the active layer formed 10-15 nm is preferable.
  • the active layer thus formed is heat-treated at 150 ° C. through an oven and dried.
  • the film printed up to the active layer is rewound to the initial starting point, and the epoxy or PMMA-based ink is printed as an insulating layer on the portion where the overlap occurs between the wirings, and the printed insulating layer is heat-treated at 150 ° C. through an oven and dried. do.
  • the ink used for the source / drain layer formed on the insulating layer printed thereon is Ag ink (PG-007 Paru Co, Korea) like the gate layer, and the thickness of the source / drain layer is preferably 100 to 500 nm. Do.
  • heat treatment is performed at 150 ° C. through an oven.
  • the transistor device In order for the thin film transistor array to operate as a sensor, when the analytical organic material is positioned on a specific transistor device, the transistor device is affected by the analytical organic material, and the electrical characteristics thereof are changed, and after the analytical organic material has passed through the transistor device, The electrical characteristics of the must be restored to their original state.
  • the active layer region of the printed thin film transistor when the active layer region of the printed thin film transistor is in direct contact with another material, the electrical characteristics of the transistor may be changed to such an extent that it does not recover. In order to prevent this, it is necessary to form a protective layer on the printed thin film transistor array.
  • cytop is used as a protective layer of the thin film transistor array. Cytop strongly induces polar organics and dipole moments and at the same time protects the printed active layer from organic solvents.
  • the method of measuring the separation state of the organic matter for analysis using the sensor thus manufactured may be performed through an active transistor measuring system.
  • the current-voltage characteristic curve (Vg-Id or Vd-Id curve) of the thin film transistor is used to measure the organic mixture. Proceed with separation.
  • each component of the organic mixture included in the mobile phase has a different attraction force for the mobile phase and the stationary phase, respectively. Since it passes through the stationary phase at a different speed, as a result, there is a difference in the speed at which each component constituting the organic mixture reaches the thin film transistor for measurement, and thus the position on the column for each component is changed.
  • the difference in position can be determined by measuring the current-voltage characteristic curve (IV curve) of the thin film transistor.
  • the mixed phases A and B are stationary phases. Separated in the process of passing through.
  • the mobile phase since the mobile phase does not affect the electrical properties of the thin film transistor, it exhibits the inherent electrical properties (eg: Vg-Id curve) of the thin film transistor array before the loaded organic material is developed downward (FIG. 7).
  • the blocking current of the thin film transistor is increased by about 10 times higher than the inherent blocking current of the thin film transistor (TR7, TR8 in FIG. 8 and TR10, TR11 in FIG. 8). Is restored to its own value.
  • the blocking current of the thin film transistor is increased by about 100 times higher than the inherent blocking current of the thin film transistor (TR3, TR4 of FIG. 8 and TR7, TR8 of FIG. 9). Is restored to its own value.
  • the separation process can be monitored by quantizing and digitizing the characteristic parameters of transistors such as off current and threshold voltage based on the I-V characteristic curves measured in the thin film transistor array by a certain range value.
  • the thin film transistor array sequentially displays the digital values of '01' (mobile phase), '10' (organic B), and '11' (organic A). It is possible to monitor the classification and analysis status of the materials used.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention se rapporte à : un capteur qui peut surveiller, à l'aide d'un réseau de transistors à couches minces qui peut être fabriqué au moyen d'un procédé d'impression de gravure rouleau à rouleau pour permettre une production en masse à bas prix, une analyse des matières organiques par une valeur numérique en chromatographie pour séparer et analyser un mélange contenant au moins deux types de matière organique mélangée dans ce dernier; un appareil de chromatographie comprenant ce capteur; et un procédé permettant de fabriquer ce capteur. Le capteur selon la présente invention est agencé dans une colonne pour la chromatographie de sorte à suivre la séparation de la matière organique, et comprend : un substrat; et un réseau de transistors à couches minces formé sur le substrat, comprenant une couche de grille, une couche diélectrique, une couche active, une couche isolante et une couche de source/drain et ayant M × N nombre de réseaux de transistors à couches minces formés au moyen du processus d'impression, le réseau de transistors à couches minces comportant une couche de passivation formée sur sa surface de sorte à protéger le réseau de transistors à couches minces contre la matière organique pour l'analyse.
PCT/KR2015/001679 2015-02-23 2015-02-23 Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie WO2016137019A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2015/001679 WO2016137019A1 (fr) 2015-02-23 2015-02-23 Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2015/001679 WO2016137019A1 (fr) 2015-02-23 2015-02-23 Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie

Publications (1)

Publication Number Publication Date
WO2016137019A1 true WO2016137019A1 (fr) 2016-09-01

Family

ID=56789558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/001679 WO2016137019A1 (fr) 2015-02-23 2015-02-23 Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie

Country Status (1)

Country Link
WO (1) WO2016137019A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019050290A1 (fr) * 2017-09-06 2019-03-14 순천대학교 산학협력단 Circuit neuronal artificiel, système neuronal artificiel et procédé de fabrication de circuit neuronal artificiel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09236560A (ja) * 1995-12-29 1997-09-09 Horiba Ltd 異物質界面における過渡的現象観測装置
JP2008216038A (ja) * 2007-03-05 2008-09-18 Matsushita Electric Ind Co Ltd 化学物質検出センサ
KR20090033166A (ko) * 2006-03-16 2009-04-01 알-아민 디라니 유전 감지 방법 및 시스템
US20110005304A1 (en) * 2008-02-06 2011-01-13 Proxeon Biosystems A/S Flow control in high performance liquid chromatography
US20140060210A1 (en) * 2012-09-05 2014-03-06 Sungkyunkwan University Foundation For Corporate Collaboration Pressure sensor and pressure sensing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09236560A (ja) * 1995-12-29 1997-09-09 Horiba Ltd 異物質界面における過渡的現象観測装置
KR20090033166A (ko) * 2006-03-16 2009-04-01 알-아민 디라니 유전 감지 방법 및 시스템
JP2008216038A (ja) * 2007-03-05 2008-09-18 Matsushita Electric Ind Co Ltd 化学物質検出センサ
US20110005304A1 (en) * 2008-02-06 2011-01-13 Proxeon Biosystems A/S Flow control in high performance liquid chromatography
US20140060210A1 (en) * 2012-09-05 2014-03-06 Sungkyunkwan University Foundation For Corporate Collaboration Pressure sensor and pressure sensing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019050290A1 (fr) * 2017-09-06 2019-03-14 순천대학교 산학협력단 Circuit neuronal artificiel, système neuronal artificiel et procédé de fabrication de circuit neuronal artificiel
KR20190027252A (ko) * 2017-09-06 2019-03-14 순천대학교 산학협력단 인공 신경 회로, 인공 신경 시스템, 및 인공 신경 회로의 제조 방법
KR101998286B1 (ko) 2017-09-06 2019-07-09 순천대학교 산학협력단 인공 신경 회로, 인공 신경 시스템, 및 인공 신경 회로의 제조 방법

Similar Documents

Publication Publication Date Title
Spanu et al. A high-sensitivity tactile sensor based on piezoelectric polymer PVDF coupled to an ultra-low voltage organic transistor
EP3108516B1 (fr) Capteur à effet de champ et procédés associés
US10352726B2 (en) Thin-film resistive-based sensor
WO2010125717A1 (fr) Capteur chimique
WO2012099446A2 (fr) Puce de capteur ionique transparente utilisant un convertisseur de signal du type transistor à effet de champ dans laquelle une électrode de grille étendue est formée, et procédé de fabrication de la puce de capteur
EP2239561A1 (fr) Capteur à OFET pour détecter une analyte
Nausieda et al. An organic active-matrix imager
Li et al. Integrated low voltage ion sensing organic field effect transistor system on plastic
Cosseddu et al. A temperature transducer based on a low-voltage organic thin-film transistor detecting pyroelectric effect
WO2010082724A9 (fr) Substrat traité en surface pour imprimante à jet d'encre
Wu et al. Array of organic field-effect transistor for advanced sensing
WO2016137019A1 (fr) Capteur de surveillance numérique d'appareil de chromatographie utilisant un réseau imprimé de transistors à couches minces, appareil de chromatographie comprenant ce dernier et procédé permettant de fabriquer un capteur de surveillance numérique d'appareil de chromatographie
Tang et al. Effect of the deformation state on the response of a flexible H 2 S sensor based on a Ph5T2 single-crystal transistor
WO2016076469A1 (fr) Procédé de fabrication de capteur de détection d'angle et de courbure, et capteur
US11650176B2 (en) Semiconductor gas sensor and gas sensing method
Zhao et al. Highly sensitive H2S sensors based on ultrathin organic single-crystal microplate transistors
US11187590B2 (en) Microbolometer detectors and arrays for printed photonics applications
WO2016181038A1 (fr) Structure cellulaire cutanée artificielle et procédé de production associé
Li et al. Subthreshold-operated low-voltage organic field-effect transistor for ion-sensing system of high transduction sensitivity
WO2016085029A1 (fr) Procédé de fabrication de transistor à couches minces sur la base d'une impression en creux rouleau à rouleau, procédé de fabrication de fond de panier de transistor à couches minces, et capteur de pression de fond de panier et procédé de fabrication de plancher intelligent
US20170067844A1 (en) Electrochemical detector
Pfattner et al. On the Working Mechanisms of Solid‐State Double‐Layer‐Dielectric‐Based Organic Field‐Effect Transistors and Their Implication for Sensors
Huang et al. Solution processed highly uniform and reliable low voltage organic FETs and facile packaging for handheld multi-ion sensing
KR20210105184A (ko) 가스 감지 센서
KR101731697B1 (ko) 인쇄 박막 트랜지스터 어레이를 이용한 크로마토그래피 장치용 디지털 모니터링 센서, 이 센서를 포함하는 크로마토그래피 장치, 크로마토그래피 장치용 디지털 모니터링 센서의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15883408

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15883408

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载