+

WO2016039038A1 - Piezoelectric device, piezoelectric device manufacturing method, and electronic component - Google Patents

Piezoelectric device, piezoelectric device manufacturing method, and electronic component Download PDF

Info

Publication number
WO2016039038A1
WO2016039038A1 PCT/JP2015/071782 JP2015071782W WO2016039038A1 WO 2016039038 A1 WO2016039038 A1 WO 2016039038A1 JP 2015071782 W JP2015071782 W JP 2015071782W WO 2016039038 A1 WO2016039038 A1 WO 2016039038A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric device
ceiling
ceiling material
rib
piezoelectric
Prior art date
Application number
PCT/JP2015/071782
Other languages
French (fr)
Japanese (ja)
Inventor
大谷崇
Original Assignee
日本電波工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電波工業株式会社 filed Critical 日本電波工業株式会社
Publication of WO2016039038A1 publication Critical patent/WO2016039038A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to a piezoelectric device, a piezoelectric device manufacturing method, and an electronic component.
  • the SAW device includes a surface wave element formed on the piezoelectric substrate, an outer wall (rib material) that surrounds the surface wave element and is bonded to the piezoelectric substrate, and an outer wall that closes the opening of the outer wall.
  • the structure which has the plate-shaped ceiling part (ceiling material) joined is known (for example, refer patent document 1).
  • This piezoelectric device is mounted on and electrically connected to the mounting substrate through a connecting member such as a solder ball, for example, with the ceiling material facing the mounting substrate.
  • the piezoelectric device having the above configuration Due to the recent demand for lowering the height of piezoelectric devices, in the piezoelectric device having the above configuration, it is required to reduce the distance from the mounting substrate. In order to cope with this, it is conceivable to reduce the thickness of the ceiling material. In this case, however, the strength of the ceiling material decreases, so that the ceiling material is damaged by the pressure of the resin mold when the piezoelectric device is mounted. There is a problem. On the other hand, it is also conceivable to form the connection electrode of the piezoelectric device by denting it toward the piezoelectric substrate.
  • connection member since the ceiling material protrudes from the surface of the piezoelectric substrate to the mounting substrate side, when the piezoelectric device is mounted on the mounting substrate, the connection member may expand and enter between the ceiling material and the mounting substrate. As a result, the connection member pushes up the piezoelectric device, and pulling the piezoelectric device away from the mounting substrate causes problems such as poor electrical connection and dropping of the piezoelectric device.
  • the present invention secures the strength of the ceiling material by maintaining the thickness of the ceiling material, and ensures the bonding between the piezoelectric device and the mounting substrate to suppress the occurrence of defective products.
  • An object of the present invention is to provide a highly reliable piezoelectric device, a method for manufacturing the same, and an electronic component having such a piezoelectric device.
  • the present invention relates to a surface wave element formed on a piezoelectric substrate, a rib member that surrounds the surface wave element and is bonded to the piezoelectric substrate, and a plate-like ceiling that is bonded to the rib member so as to close the opening of the rib member.
  • the ceiling material is formed such that the area of the second surface opposite to the rib material is smaller than the area of the first surface joined to the rib material.
  • the ceiling material includes a first ceiling material having a first surface joined to the rib material, a second ceiling material having a second surface having a smaller area than the first surface and laminated on the first ceiling material, You may have.
  • a connection electrode that is electrically connected to the surface wave element and formed on the outer portion of the rib member of the piezoelectric substrate may be provided.
  • the connecting member may be a solder ball.
  • the present invention is an electronic component including the above-described piezoelectric device, the mounting substrate having a terminal on the surface and electrically connected to the piezoelectric device via the terminal, and disposed at least between the piezoelectric device and the mounting substrate A resin part.
  • the present invention includes a step of forming a surface wave element on the surface of the piezoelectric substrate, a step of forming a rib material on the piezoelectric substrate so as to surround the surface wave element, and a plate shape on the rib material so as to close the opening of the rib material.
  • a method of manufacturing a piezoelectric device comprising: a step of bonding the ceiling material of the first material, wherein the area of the second surface opposite to the rib material is smaller than the area of the first surface to be bonded to the rib material with respect to the ceiling material. The process of carrying out is included.
  • the ceiling material includes a first ceiling material having a first surface joined to the rib material, and a second ceiling material having a second surface having a smaller area than the first surface, and the first ceiling material You may include the process of joining to a rib material, and the process of laminating
  • the connecting member is the ceiling material even if the ceiling material is thick. And the mounting board are suppressed. Therefore, while ensuring the strength of the ceiling material to prevent breakage, the piezoelectric device has high reliability by preventing poor electrical connection of the piezoelectric device to the mounting substrate and preventing the piezoelectric device from falling off, thereby suppressing the occurrence of defective products. And its manufacturing method, and an electronic component having such a piezoelectric device can be provided.
  • FIGS. 1A and 1B show a state where the piezoelectric device shown in FIG. 1 is mounted on a mounting substrate, in which FIG. 1A is a cross-sectional view, and FIG. 2 is a flowchart for explaining a manufacturing method of the piezoelectric device of FIG. 1. It is a figure which shows an example of the manufacturing process of the piezoelectric device of FIG.
  • FIG. 5 is a diagram illustrating an example of a manufacturing process of the piezoelectric device of FIG. 1 following FIG. 4.
  • FIG. 5 is a diagram illustrating an example of a manufacturing process of the piezoelectric device of FIG. 1 following FIG. 4.
  • FIG. 6 is a diagram illustrating an example of a manufacturing process of the piezoelectric device of FIG. 1 following FIG. 5.
  • An example of the piezoelectric device of 2nd Embodiment is shown, (a) is a bottom view, (b) is sectional drawing to which the principal part was expanded. It is sectional drawing which shows an example of the piezoelectric component of 3rd Embodiment.
  • the left-right direction of the paper is expressed as the X direction
  • the direction orthogonal to the X direction is expressed as the Z direction.
  • the direction perpendicular to the XZ plane (the thickness direction of the piezoelectric device) is expressed as the Y direction.
  • the direction of the arrow in the figure is the + direction
  • the direction opposite to the arrow direction is the ⁇ direction.
  • FIG. 1A and 1B show an example of a piezoelectric device 10 according to a first embodiment, in which FIG. 1A is a bottom view and FIG. 1B is a cross-sectional view taken along the line AA in FIG.
  • the connecting member 16 is shown in a transparent manner.
  • the piezoelectric device 10 includes a piezoelectric substrate 11, a surface wave element 12, a rib member 13, a ceiling member 14, a connection electrode 15, and a connection member 16.
  • the piezoelectric device 10 is a SAW device such as a SAW filter or a SAW resonator.
  • the piezoelectric substrate 11 is a rectangular and plate-like member when viewed from the Y direction.
  • the shape of the piezoelectric substrate 11 viewed from the Y direction may be various shapes such as a polygonal shape other than a rectangular shape, a circular shape, an oval shape, and an elliptical shape.
  • the piezoelectric substrate 11 is a plate-like member having a piezoelectric function.
  • the piezoelectric substrate 11 is made of lithium tantalate (LiTaO 3 ) or lithium niobate (LiNbO 3 ), for example, ST-cut quartz material.
  • the surface wave element 12 is formed on the piezoelectric substrate 11 and has a comb-shaped electrode (IDT: Inter Digital Transducer).
  • the comb-shaped electrode is formed in a region surrounded by the rib member 13 on the surface of the piezoelectric substrate 11 (the surface on the ⁇ Y side). For example, a pair of comb electrodes is formed.
  • the configuration of the surface acoustic wave element 12 shown in FIG. 1B is an example.
  • the comb electrode is a conductive metal film.
  • the conductive metal film for example, chromium (Cr), titanium (Ti), nickel (Ni), nickel chrome (NiCr), nickel as a base layer for improving adhesion to the piezoelectric substrate 11, nickel A laminated structure in which a titanium (NiTi) or nickel tungsten (NiW) alloy is formed and gold (Au) or silver (Ag) is formed as a main electrode layer thereon is employed.
  • the rib member 13 is bonded to the piezoelectric substrate 11, and is formed in a region surrounding the surface wave element 12 on the surface 11 a on the ⁇ Y side of the piezoelectric substrate 11.
  • the rib member 13 is a plate-like member and has an opening O.
  • the shape of the opening ⁇ is a rectangular shape having sides parallel to the X direction and the Z direction, but is not limited to this, for example, a polygonal shape other than a square, a circular shape, a cross shape extending in the X direction and the Z direction Various shapes may be used.
  • photosensitive polyimide is used as the rib member 13 photosensitive polyimide is used.
  • the rib member 13 may be a resin other than polyimide, ceramic, or the like.
  • the ceiling material 14 is a plate-like member whose thickness direction is the Y direction.
  • the ceiling material 14 is joined to the rib material 13 so as to close the opening O of the rib material 13. Thereby, a cavity 17 surrounded by the piezoelectric substrate 11, the rib member 13, and the ceiling member 14 is formed.
  • the ceiling material 14 is formed, for example, to a thickness having strength against pressure when the piezoelectric device 10 is resin-molded, and is set to a thickness of about 50 ⁇ m, for example.
  • the ceiling member 14 has a first surface (+ Y side surface) 14 a to be joined to the rib member 13 and a second surface ( ⁇ Y side surface) 14 b opposite to the rib member 13.
  • the area S2 of the second surface 14b is set to be smaller than the area S1 of the first surface 14a.
  • the ceiling member 14 has a shape in which a region corresponding to the connection electrode 15 is notched when viewed from the Y direction, and a notch 18 is formed at each of four corners.
  • the notch 18 is formed in an L shape having straight portions parallel to the X direction and the Z direction.
  • the notch part 18 is not limited to the above-mentioned L-shape, A curved shape etc. may be sufficient. Further, some or all of the four cutout portions 18 described above may have different shapes. The matter regarding the shape of the notch 18 is the same for the notch 21 of the first ceiling member 19 and the notches 23 and 24 of the second ceiling member 22 described later.
  • cutout portion 18 is not limited to being formed at a corner portion in a rectangular shape when viewed from the Y direction, and may be formed at, for example, the central portion of the side portion. Further, the number of notches 18 is not limited to four, and can be set as appropriate according to the number of connection electrodes 15 and the like.
  • the ceiling material 14 includes a first ceiling material 21 and a second ceiling material 22.
  • the first ceiling material 21 and the second ceiling material 22 are plate-shaped members, respectively.
  • the thickness (the length in the Y direction) of each of the first ceiling material 21 and the second ceiling material 22 is set to 20 ⁇ m to 25 ⁇ m, for example.
  • the first ceiling member 21 and the second ceiling member 22 are formed with the same thickness, but may have different thicknesses.
  • photosensitive polyimide is used for the first ceiling member 21 and the second ceiling member 22.
  • the 1st ceiling material 21 and the 2nd ceiling material 22 may mix a filler with a polyimide, and may improve a pressure
  • the filler for example, mica (mica) particles are used.
  • first ceiling member 21 and the second ceiling member 22 may be a resin or ceramic other than polyimide. Further, the first ceiling material 21 and the second ceiling material 22 may be formed of different materials. In addition, about the matter regarding the ceiling material 14, the 1st ceiling material 21, and the 2nd ceiling material 22 mentioned above, except the structure of the notch part 18, 23, 24, the ceiling material 214 which concerns on 2nd Embodiment mentioned later. The first ceiling member 221 and the second ceiling member 222 can be similarly applied.
  • the first ceiling member 21 is disposed on the + Y side of the second ceiling member 22 and includes a first surface 14 a that is joined to the rib member 13.
  • the first ceiling member 21 has four cutout portions 23.
  • the second ceiling material 22 is laminated on the first ceiling material 21.
  • the second ceiling member 22 is arranged on the surface of the first ceiling member 21 in a region including the opening O of the rib member 13 when viewed from the Y direction. With this configuration, the thickness of the ceiling portion of the cavity 17 is ensured.
  • positioned in the 1st ceiling material 21 is not limited to the said structure.
  • the second ceiling member 22 includes a second surface 14b.
  • the second ceiling member 22 has four cutout portions 24 that are larger than the cutout portions 23 at positions corresponding to the four cutout portions 23 of the first ceiling material 21.
  • Each of these four cutout portions 24 has the same shape as the cutout portion 23 of the first ceiling member 21 corresponding to the shape seen from the Y direction.
  • each of the four cutout portions 24 of the second ceiling member 22 has an inner side (as viewed from the Y direction with respect to the cutout portion 23 of the corresponding first ceiling member 21).
  • the second ceiling member 22 is disposed at a distance from the center of the second ceiling member 22.
  • the side surface of the notch part 23 and the notch part 24 is a surface parallel to a Y direction.
  • the notch part 14 of the ceiling material 14 is formed so that it may become large from the 1st surface 14a to the 2nd surface 14b, and the side surface is formed in step shape.
  • a part or all of the side surface of the notch 18 may not be formed in such a staircase shape.
  • one or both side surfaces of the cutout portions 23 and 24 of the first and second ceiling members 21 and 22 are arranged in the Y direction so that the cutout shape gradually increases from the first surface 14a to the second surface 14b. It may be an inclined surface inclined with respect to the surface.
  • a part of the notch portion 24 of the second ceiling material 22 may be formed so as to overlap the notch portion 23 of the corresponding first ceiling material 21 when viewed from the Y direction.
  • the side surface of the overlapped cutout portion 18 is formed in a planar shape parallel to the Y direction.
  • the ceiling material 14 is not limited to the above-described configuration, and may be formed from a single member, for example, instead of being configured from the first ceiling material 21 and the second ceiling material 22.
  • the first surface 14a is formed on the front surface (+ Y side surface)
  • the second surface 14b is formed on the back surface ( ⁇ Y side surface).
  • the ceiling material 14 is not limited to being comprised by the two 1st ceiling materials 21 and the 2nd ceiling material 22, Three or more sheets may be laminated
  • a configuration may be adopted in which plate-like members having different areas are laminated so that the area is reduced from the area S1 of the first surface 14a to the area S2 of the second surface 14b.
  • the above items can be similarly applied to the ceiling material 214, the first ceiling material 421, and the second ceiling material 422 according to the second embodiment described later.
  • the above-described rib member 13 and ceiling member 14 have a width (seal path) W of a region where both overlap as viewed from the Y direction. That is, since the bonding area between the rib member 13 and the ceiling member 14 is secured, the mutual adhesion is maintained, and the airtightness of the cavity 17 is secured. Further, the ceiling material 14 has a configuration in which the area S2 is smaller than the area S1, but since the thickness L of the ceiling material 14 is maintained, the pressure resistance of the ceiling material 14 is ensured. The same applies to the configuration of the rib member 13 and the ceiling member 214 according to the second embodiment described later.
  • connection electrode 15 is formed on the surface ( ⁇ Y side surface) 11 a of the piezoelectric substrate 11.
  • the connection electrode 15 is an outer portion of the rib member 13 of the piezoelectric substrate 11 and is formed in a region corresponding to the notches 23 and 24 of the first and second ceiling members 21 and 22.
  • the connection electrode 15 is electrically connected to the comb electrode of the surface acoustic wave element 12 through a wiring (not shown).
  • the connection electrode 15 is, for example, UBM (Under Bump Metal), and is formed of a metal such as gold or silver.
  • the connection electrode 15 is formed by plating, for example.
  • connection member 16 is a conductive member for electrically connecting a terminal 31 of the mounting substrate 30 to be described later and the connection electrode 15.
  • the connection member 16 is, for example, a solder ball.
  • the connecting member 16 is not limited to a solder ball, and may be another conductive ball.
  • the connection member 16 is bonded to and held by the connection electrode 15. In the piezoelectric device 10, whether or not to hold the connection member 16 is arbitrary.
  • FIG. 2A and 2B show the piezoelectric device 10 mounted on the mounting substrate 30, where FIG. 2A is a cross-sectional view, and FIG. 2B is an enlarged cross-sectional view of the main part of FIG.
  • the mounting substrate 30 is an internal wiring substrate in, for example, a communication device on which the piezoelectric device 10 is mounted.
  • the terminal 31 has, for example, a land pattern configuration formed on the surface of the mounting substrate 30.
  • the piezoelectric device 10 is aligned and placed on the mounting substrate 30. Next, through a reflow process, the piezoelectric device 10 is bonded to the mounting substrate 30 as shown in FIG.
  • connection member 16 is partially melted by being heated in the reflow process. Then, the connection member 16 is deformed so as to be crushed in the Y direction, and is spread and fixed along the surface of the terminal 31. At this time, since the ceiling material 14 is formed so as to become smaller from the first surface 14a to the second surface 14b, even if the connection member 16 is deformed, the ceiling material 14 is formed on the lower surface (the surface on the ⁇ Y side) of the ceiling material 14. Intrusion is suppressed.
  • FIG. 3 is a flowchart illustrating an example of a method for manufacturing the piezoelectric device 10.
  • 4 to 6 are diagrams illustrating an example of the manufacturing process of the method for manufacturing the piezoelectric device 10.
  • FIG. 4 to 6 the piezoelectric wafer AW mainly indicates a region where one piezoelectric device 10 is formed, and other regions are omitted. This manufacturing method will be described along the flowchart shown in FIG.
  • the method for manufacturing the piezoelectric device 10 described below is a wafer level packaging method in which processes such as the formation of the surface acoustic wave element 12 and the rib material 13 are collectively performed on the wafer, and finally the wafer is cut and individualized. Is adopted. Note that the method for manufacturing the piezoelectric device 10 is optional whether or not such a wafer level packaging method is used.
  • the piezoelectric substrate 11 on which the surface wave element 12 is first formed is individualized, and then the rib material is used. Steps such as forming 13 may be performed.
  • a piezoelectric wafer AW that multi-planarizes the piezoelectric substrate 11 is prepared (step S01).
  • the piezoelectric wafer AW is cut out with a predetermined thickness from, for example, lithium tantalate, lithium niobate, or a single crystal of quartz.
  • the piezoelectric wafer AW is adjusted to a required thickness, and the surface is further cleaned.
  • the surface wave element 12 is formed on the piezoelectric wafer AW (piezoelectric substrate 11) (step S02).
  • the conductive metal film constituting the comb-shaped electrode is patterned on the surface ( ⁇ Y side surface) of the piezoelectric wafer AW by using a film forming method such as sputtering or vacuum deposition through a metal mask. .
  • the surface acoustic wave element 12 is formed on the piezoelectric wafer AW (piezoelectric substrate 11).
  • the comb electrode of the surface acoustic wave element 12 may be formed by a technique such as photolithography and etching. Further, wirings connected to the comb electrodes are also formed simultaneously or separately with the comb electrodes.
  • the rib member 13 and the connection electrode 15 are formed (step S03).
  • a photosensitive polyimide film is disposed on the ⁇ Y side surface of the piezoelectric wafer AW.
  • the photosensitive polyimide film is exposed through a photomask having a rib material 13 formation region.
  • the exposed portion of the photosensitive polyimide is cured and bonded to the piezoelectric wafer AW, and the rib member 13 is formed on the piezoelectric wafer AW (piezoelectric substrate 11) so as to surround the surface wave element 12.
  • the connection electrode 15 is formed by plating, for example, gold, silver, or the like on the surface ( ⁇ Y side surface) of the piezoelectric wafer AW.
  • the first ceiling member 21 is joined (step S04).
  • a photosensitive polyimide film R1 having a predetermined thickness for forming the first ceiling member 21 is disposed on the ⁇ Y side of the piezoelectric wafer AW.
  • the film R ⁇ b> 1 is exposed through a photomask M ⁇ b> 1 having a formation area for the first ceiling material 21.
  • the first ceiling member 21 joined to the rib member 13 so as to close the opening O is formed.
  • the second ceiling material 22 is laminated (step S05).
  • a photosensitive polyimide film R2 having a predetermined thickness for forming the second ceiling member 22 is disposed on the ⁇ Y side of the piezoelectric wafer AW.
  • a photomask M2 including a second ceiling material 22 formation region is formed.
  • connection members 16 are disposed on the connection electrodes 15 of the piezoelectric wafer AW.
  • connection member 16 is welded to the connection electrode 15.
  • the piezoelectric wafer AW is cut by a dicing saw or the like along a preset scribe line SL (step S07). Thereby, it cuts into each piezoelectric device 10, and the piezoelectric device 10 is completed.
  • the connecting member 16 even if the connecting member 16 is deformed, it is suppressed from entering the lower surface (the surface on the ⁇ Y side) of the ceiling material 14, so the ceiling material 14 is formed thick.
  • the bonding between the piezoelectric device 10 and the mounting substrate 30 is ensured, and the electrical connection of the piezoelectric device 10 to the mounting substrate 30 and the falling off of the piezoelectric device 10 are prevented, thereby suppressing the occurrence of defective products.
  • the highly reliable piezoelectric device 10 can be provided.
  • FIG. 7A and 7B show an example of the piezoelectric device 210 according to the second embodiment, where FIG. 7A is a bottom view and FIG. 7B is an enlarged cross-sectional view of the main part.
  • the connecting member 16 is shown in a transparent manner.
  • the same or equivalent components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified.
  • the piezoelectric device 210 has a ceiling material 214 as shown in FIG.
  • the ceiling material 214 has a first surface (+ Y side surface) 214a to be joined to the rib material 13 and a second surface ( ⁇ Y side surface) 214b opposite to the rib material 13. Similar to the first embodiment, the area of the second surface 214b is set to be smaller than the area of the first surface 214a.
  • the ceiling material 214 includes a first ceiling material 221 and a second ceiling material 222.
  • Each of the ceiling material 214, the first ceiling material 221, and the second ceiling material 222 is provided with through holes 218, 223, and 224, which will be described later, instead of the configuration of the notches 18, 23, and 24. These are the same configurations as the ceiling material 14, the first ceiling material 21, and the second ceiling material 22 according to the first embodiment, respectively.
  • the first ceiling member 221 is joined to the rib member 13 and has a first surface 214a.
  • the second ceiling material 222 is disposed on the ⁇ Y side of the first ceiling material 221 and is laminated on the first ceiling material 221.
  • the second ceiling material 222 has a second surface 214b.
  • the ceiling material 214 has four through holes 218. These four through holes 218 are arranged so as to overlap with the connection electrode 15 when viewed from the Y direction.
  • the connecting member 16 is disposed in the through hole 218.
  • the through hole 218 includes a through hole 223 in the first ceiling member 221 and a through hole 224 in the second ceiling member 222.
  • the through holes 218, 223, and 224 are formed so that a cross section along the XZ plane has a circular shape. However, the cross-section of the through hole 218 or the like may be a polygonal shape or the like.
  • the through hole 218 is formed so as to increase from the first surface 214a to the second surface 214b, and the side surface of the through hole 218 is formed in a stepped shape.
  • a part or all of the side surface of the through hole 218 may not be formed in a staircase shape.
  • one or both side surfaces of the through holes 223 and 224 of the first and second ceiling members 221 and 222 are replaced with surfaces parallel to the Y direction, and the cross-sectional shape of the through holes 223 and 224 is from the first surface 214a. It may be an inclined surface formed so as to gradually increase toward the second surface 214b and inclined with respect to the Y direction.
  • the through hole 223 of the first ceiling member 221 and the through hole 224 of the second ceiling member 222 may be formed such that a part of the side faces overlaps when viewed from the Y direction. In this case, the side surface of the through hole 218 is configured to have a portion parallel to the Y direction.
  • the piezoelectric device 210 according to this embodiment described above has the same effect as that of the first embodiment.
  • the method for manufacturing the piezoelectric device 210 is almost the same as the method for manufacturing the piezoelectric device 10 described above.
  • FIG. 8 is a cross-sectional view illustrating an example of the piezoelectric component 100 according to the third embodiment.
  • the electronic component 100 includes the piezoelectric device 10, the mounting substrate 30, and the resin portion 40.
  • the piezoelectric device 10 and the mounting substrate 30 are bonded and electrically connected to each other.
  • the external terminal 32 is provided on the surface of the mounting substrate 30 on the ⁇ Y side.
  • the external terminal 32 is a terminal when the piezoelectric component 100 is mounted on the wiring board.
  • four external terminals 32 are formed on the mounting substrate 30. Each of these four external terminals 32 is formed, for example, in a region corresponding to the terminal 31 when viewed from the Y direction.
  • the external terminal 32 is electrically connected to the terminal 31 via a wiring (not shown).
  • Resin portion 40 is disposed between piezoelectric device 10 and mounting substrate 30.
  • the resin part 40 is, for example, an epoxy resin. Note that polyimide or the like may be used as the resin of the resin portion 40.
  • the resin portion 40 is entirely filled with no gap between the piezoelectric device 10 and the mounting substrate 30, but may be arranged so as to form a gap portion.
  • a substrate on which the mounting substrate 30 is multi-planar is prepared.
  • a reflow process is performed in a state where the piezoelectric device 10 is placed on the substrate, and the piezoelectric device 10 is bonded to the mounting substrate 30.
  • resin is filled between the piezoelectric device 10 and the substrate, and the resin portion 40 is formed.
  • the resin part 40 is formed by transfer molding, for example.
  • the resin part 40 may be formed by compression molding or injection molding.
  • the substrate is cut and individual electronic components 100 are taken out. The electronic component 100 is completed through the above steps.
  • the connecting member 16 enters between the ceiling material 14 and the mounting substrate 30 when the piezoelectric device 10 and the mounting substrate 30 are joined in the manufacturing process of the electronic component 100. Therefore, it is possible to prevent defective bonding of the piezoelectric device 10 to the mounting substrate 30 and electrical connection to suppress the generation of defective products, and to secure the strength of the ceiling material 14. It is possible to prevent the ceiling material 14 from being damaged when the portion 40 is formed. Therefore, it is possible to provide the electronic component 100 with high quality and high reliability. Moreover, according to the electronic component 100, since the piezoelectric device 10 is mounted on the mounting substrate 30 and has the resin portion 40, durability as a piezoelectric device can be improved.
  • Opening S1 Area of first surface S2 ... Area of second surface 10, 210 ... Piezoelectric device 11 ... Piezoelectric substrate 12 ... Surface wave element 13 ... Rib material 14, 214 ... Ceiling material 14a, 214a ... First surface 14b , 214b ... second surface 15 ... connection electrode 16 ... connection member 21, 222 ... first ceiling material 22, 221 ... second ceiling material 30 ... mounting substrate 31 ... terminal 40 ... resin part 100 ... electronic component

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

[Problem] To suppress generation of failure products by ensuring the strength of a ceiling material by maintaining the thickness of the ceiling material, and by reliably bonding a piezoelectric device and a mounting substrate to each other. [Solution] A piezoelectric device 10 has: an acoustic surface wave element 12 formed on a piezoelectric substrate 11; a rib material 13 bonded on the piezoelectric substrate 11 by surrounding the acoustic surface wave element 12; and a board-like ceiling material 14 bonded to the rib material 13 such that an opening O of the rib material 13 is covered with the ceiling material. The ceiling material 14 is formed such that an area S2 of a second surface 14b on the side opposite to the rib material 13 is smaller than an area S1 of a first surface 14a bonded to the rib material 13.

Description

圧電デバイス、圧電デバイス製造方法、及び電子部品Piezoelectric device, piezoelectric device manufacturing method, and electronic component
　本発明は、圧電デバイス、圧電デバイス製造方法、及び電子部品に関する。 The present invention relates to a piezoelectric device, a piezoelectric device manufacturing method, and an electronic component.
　携帯電話機や携帯端末機などの各種情報・通信機器の一つとして、ＳＡＷ（弾性表面波：Surface Acoustic Wave）デバイスを搭載した製品が提供されている。ＳＡＷデバイスは、圧電基板に形成される表面波素子と、表面波素子を囲んで圧電基板上に接合される外囲壁部（リブ材）と、外囲壁部の開口を塞ぐように外囲壁部に接合される板状の天井部（天井材）と、を有する構成が知られている（例えば、特許文献１参照）。この圧電デバイスは、天井材を実装基板側に向けた状態で、例えば半田ボールなどの接続部材を介して実装基板に搭載され、かつ電気的に接続される。 As one of various information / communication devices such as mobile phones and mobile terminals, products equipped with SAW (Surface Acoustic Wave) devices are provided. The SAW device includes a surface wave element formed on the piezoelectric substrate, an outer wall (rib material) that surrounds the surface wave element and is bonded to the piezoelectric substrate, and an outer wall that closes the opening of the outer wall. The structure which has the plate-shaped ceiling part (ceiling material) joined is known (for example, refer patent document 1). This piezoelectric device is mounted on and electrically connected to the mounting substrate through a connecting member such as a solder ball, for example, with the ceiling material facing the mounting substrate.
特開２０１１－１４７０９８号公報JP 2011-147098 A
　近年の圧電デバイスの低背化の要請から、上記構成の圧電デバイスにおいては、実装基板との間隔を小さくすることが求められている。これに対応するため、天井材の厚さを薄くすることも考えられるが、この場合、天井材の強度が低下するため、圧電デバイスの実装時において樹脂モールドの圧力などにより、天井材が破損するといった問題がある。一方、圧電デバイスの接続電極を圧電基板側に凹ませて形成することも考えられる。この場合、天井材は、圧電基板の表面から実装基板側に突出するので、実装基板に圧電デバイスを搭載する際、接続部材が拡がって天井材と実装基板との間に入り込むことがある。これにより、接続部材が圧電デバイスを押し上げ、圧電デバイスを実装基板から引き離すことで電気的な接続不良や、圧電デバイスの脱落等が発生するといった問題がある。 Due to the recent demand for lowering the height of piezoelectric devices, in the piezoelectric device having the above configuration, it is required to reduce the distance from the mounting substrate. In order to cope with this, it is conceivable to reduce the thickness of the ceiling material. In this case, however, the strength of the ceiling material decreases, so that the ceiling material is damaged by the pressure of the resin mold when the piezoelectric device is mounted. There is a problem. On the other hand, it is also conceivable to form the connection electrode of the piezoelectric device by denting it toward the piezoelectric substrate. In this case, since the ceiling material protrudes from the surface of the piezoelectric substrate to the mounting substrate side, when the piezoelectric device is mounted on the mounting substrate, the connection member may expand and enter between the ceiling material and the mounting substrate. As a result, the connection member pushes up the piezoelectric device, and pulling the piezoelectric device away from the mounting substrate causes problems such as poor electrical connection and dropping of the piezoelectric device.
　以上のような事情に鑑み、本発明は、天井材の厚さを維持して天井材の強度を確保するとともに、圧電デバイスと実装基板との接合を確実にして不良品の発生を抑制し、信頼性が高い圧電デバイス及びその製造方法、並びにこのような圧電デバイスを有する電子部品を提供することを目的とする。 In view of the circumstances as described above, the present invention secures the strength of the ceiling material by maintaining the thickness of the ceiling material, and ensures the bonding between the piezoelectric device and the mounting substrate to suppress the occurrence of defective products, An object of the present invention is to provide a highly reliable piezoelectric device, a method for manufacturing the same, and an electronic component having such a piezoelectric device.
　本発明は、圧電基板に形成される表面波素子と、表面波素子を囲んで圧電基板上に接合されるリブ材と、リブ材の開口を塞ぐようにリブ材に接合される板状の天井材と、を有する圧電デバイスであって、天井材は、リブ材と接合する第１面の面積より、リブ材と反対側の第２面の面積が小さく形成される。 The present invention relates to a surface wave element formed on a piezoelectric substrate, a rib member that surrounds the surface wave element and is bonded to the piezoelectric substrate, and a plate-like ceiling that is bonded to the rib member so as to close the opening of the rib member. The ceiling material is formed such that the area of the second surface opposite to the rib material is smaller than the area of the first surface joined to the rib material.
　また、天井材は、リブ材に接合される第１面を備える第１天井材と、第１面より面積が小さい第２面を備えかつ第１天井材に積層される第２天井材と、を有してもよい。また、表面波素子と電気的に接続されかつ圧電基板のリブ材の外側部分に形成された接続電極を備えてもよい。また、接続電極に接合しかつ実装基板の端子と接続電極とを電気的に接続するための導電性の接続部材を備えてもよい。また、接続部材は、半田ボールであってもよい。 The ceiling material includes a first ceiling material having a first surface joined to the rib material, a second ceiling material having a second surface having a smaller area than the first surface and laminated on the first ceiling material, You may have. In addition, a connection electrode that is electrically connected to the surface wave element and formed on the outer portion of the rib member of the piezoelectric substrate may be provided. Moreover, you may provide the electroconductive connection member for joining to a connection electrode and electrically connecting the terminal of a mounting board | substrate, and a connection electrode. Further, the connecting member may be a solder ball.
　本発明は、上記した圧電デバイスを含む電子部品であって、表面に端子を備えかつ端子を介して圧電デバイスと電気的に接続される実装基板と、少なくとも圧電デバイスと実装基板との間に配置される樹脂部と、を有する。 The present invention is an electronic component including the above-described piezoelectric device, the mounting substrate having a terminal on the surface and electrically connected to the piezoelectric device via the terminal, and disposed at least between the piezoelectric device and the mounting substrate A resin part.
　本発明は、圧電基板の表面に表面波素子を形成する工程と、表面波素子を囲むように圧電基板上にリブ材を形成する工程と、リブ材の開口を塞ぐようにリブ材に板状の天井材を接合する工程と、を有する圧電デバイス製造方法であって、天井材に対して、リブ材と接合する第１面の面積より、リブ材と反対側の第２面の面積を小さくする工程を含む。 The present invention includes a step of forming a surface wave element on the surface of the piezoelectric substrate, a step of forming a rib material on the piezoelectric substrate so as to surround the surface wave element, and a plate shape on the rib material so as to close the opening of the rib material. A method of manufacturing a piezoelectric device, comprising: a step of bonding the ceiling material of the first material, wherein the area of the second surface opposite to the rib material is smaller than the area of the first surface to be bonded to the rib material with respect to the ceiling material. The process of carrying out is included.
　また、天井材は、リブ材に接合される第１面を備える第１天井材と、第１面より面積が小さい第２面を備える第２天井材と、を有し、第１天井材をリブ材に接合する工程と、第１天井材に第２天井材を積層する工程と、を含んでもよい。 The ceiling material includes a first ceiling material having a first surface joined to the rib material, and a second ceiling material having a second surface having a smaller area than the first surface, and the first ceiling material You may include the process of joining to a rib material, and the process of laminating | stacking a 2nd ceiling material on a 1st ceiling material.
　本発明によれば、天井材は、リブ材と接合する第１面の面積より、リブ材と反対側の第２面の面積が小さいので、天井材を厚くしても、接続部材が天井材と実装基板との間に入り込むことが抑制される。よって、天井材の強度を確保して破損を防止するとともに、実装基板に対する圧電デバイスの電気的な接続不良や圧電デバイスの脱落を防止して不良品の発生を抑制し、信頼性が高い圧電デバイス及びその製造方法、並びにこのような圧電デバイスを有する電子部品を提供することができる。 According to the present invention, since the ceiling material has a smaller area on the second surface opposite to the rib material than the area of the first surface joined to the rib material, the connecting member is the ceiling material even if the ceiling material is thick. And the mounting board are suppressed. Therefore, while ensuring the strength of the ceiling material to prevent breakage, the piezoelectric device has high reliability by preventing poor electrical connection of the piezoelectric device to the mounting substrate and preventing the piezoelectric device from falling off, thereby suppressing the occurrence of defective products. And its manufacturing method, and an electronic component having such a piezoelectric device can be provided.
第１実施形態の圧電デバイスの一例を示し、（ａ）は底面図、（ｂ）は（ａ）のＡ－Ａ線に沿った断面図である。An example of the piezoelectric device of 1st Embodiment is shown, (a) is a bottom view, (b) is sectional drawing along the AA of (a). 図１に示す圧電デバイスが実装基板に搭載された状態を示し、（ａ）は断面図、（ｂ）は（ａ）の要部を拡大した断面図である。FIGS. 1A and 1B show a state where the piezoelectric device shown in FIG. 1 is mounted on a mounting substrate, in which FIG. 1A is a cross-sectional view, and FIG. 図１の圧電デバイスの製造方法を説明するためのフローチャートである。2 is a flowchart for explaining a manufacturing method of the piezoelectric device of FIG. 1. 図１の圧電デバイスの製造工程の一例を示す図である。It is a figure which shows an example of the manufacturing process of the piezoelectric device of FIG. 図４に引き続き、図１の圧電デバイスの製造工程の一例を示す図である。FIG. 5 is a diagram illustrating an example of a manufacturing process of the piezoelectric device of FIG. 1 following FIG. 4. 図５に引き続き、図１の圧電デバイスの製造工程の一例を示す図である。FIG. 6 is a diagram illustrating an example of a manufacturing process of the piezoelectric device of FIG. 1 following FIG. 5. 第２実施形態の圧電デバイスの一例を示し、（ａ）は底面図、（ｂ）は要部を拡大した断面図である。An example of the piezoelectric device of 2nd Embodiment is shown, (a) is a bottom view, (b) is sectional drawing to which the principal part was expanded. 第３実施形態の圧電部品の一例を示す断面図である。It is sectional drawing which shows an example of the piezoelectric component of 3rd Embodiment.
　以下、本発明の実施形態について図面を参照しながら説明する。ただし、本発明はこれに限定されるものではない。また、図面においては一部分を大きくまたは強調して記載するなど適宜縮尺を変更して表現している。また、図面において、金属膜や接続部材などの導電性部材は、ハッチングを施して表している。なお、圧電基板及び実装基板の断面を示すハッチングは省略している。以下の各図では、ＸＹＺ座標系を用いて図中の方向を説明する。このＸＹＺ座標系においては、圧電デバイスの表面（上面）に平行な平面をＸＺ平面とする。このＸＺ平面において、紙面の左右方向をＸ方向と表記し、Ｘ方向に直交する方向をＺ方向と表記する。ＸＺ平面に垂直な方向（圧電デバイスの厚さ方向）はＹ方向と表記する。Ｘ方向、Ｙ方向、及びＺ方向のそれぞれは、図中の矢印の方向が＋方向であり、矢印の方向とは反対の方向が－方向であるものとして説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to this. Further, in the drawings, the scale is appropriately changed and expressed by partially enlarging or emphasizing. In the drawings, conductive members such as metal films and connecting members are hatched. In addition, the hatching which shows the cross section of a piezoelectric substrate and a mounting substrate is abbreviate | omitted. In the following figures, directions in the figures will be described using an XYZ coordinate system. In this XYZ coordinate system, a plane parallel to the surface (upper surface) of the piezoelectric device is defined as an XZ plane. In this XZ plane, the left-right direction of the paper is expressed as the X direction, and the direction orthogonal to the X direction is expressed as the Z direction. The direction perpendicular to the XZ plane (the thickness direction of the piezoelectric device) is expressed as the Y direction. In each of the X direction, the Y direction, and the Z direction, the direction of the arrow in the figure is the + direction, and the direction opposite to the arrow direction is the − direction.
　＜第１実施形態＞
　第１実施形態について、図１を参照しながら説明する。図１は、第１実施形態の圧電デバイス１０の一例を示し、（ａ）は底面図、（ｂ）は（ａ）のＡ－Ａ線に沿った断面図である。なお、図１（ａ）では、接続部材１６を透過して表している。図１に示すように、圧電デバイス１０は、圧電基板１１と、表面波素子１２と、リブ材１３と、天井材１４と、接続電極１５と、接続部材１６とを有している。圧電デバイス１０は、例えばＳＡＷフィルタやＳＡＷ共振子などのＳＡＷデバイスである。 <First Embodiment>
A first embodiment will be described with reference to FIG. 1A and 1B show an example of a piezoelectric device 10 according to a first embodiment, in which FIG. 1A is a bottom view and FIG. 1B is a cross-sectional view taken along the line AA in FIG. In FIG. 1A, the connecting member 16 is shown in a transparent manner. As shown in FIG. 1, the piezoelectric device 10 includes a piezoelectric substrate 11, a surface wave element 12, a rib member 13, a ceiling member 14, a connection electrode 15, and a connection member 16. The piezoelectric device 10 is a SAW device such as a SAW filter or a SAW resonator.
　圧電基板１１は、Ｙ方向から見て矩形状かつ板状の部材である。なお、圧電基板１１のＹ方向から見た形状は、四角形状以外の多角形状や、円形状、長円形状、楕円形状など種々の形状であってよい。圧電基板１１は、圧電機能を有する板状の部材である。圧電基板１１は、タンタル酸リチウム（ＬｉＴａＯ３）や、ニオブ酸リチウム（ＬｉＮｂＯ３）、例えばＳＴカットされた水晶材などである。 The piezoelectric substrate 11 is a rectangular and plate-like member when viewed from the Y direction. The shape of the piezoelectric substrate 11 viewed from the Y direction may be various shapes such as a polygonal shape other than a rectangular shape, a circular shape, an oval shape, and an elliptical shape. The piezoelectric substrate 11 is a plate-like member having a piezoelectric function. The piezoelectric substrate 11 is made of lithium tantalate (LiTaO 3 ) or lithium niobate (LiNbO 3 ), for example, ST-cut quartz material.
　表面波素子１２は、圧電基板１１に形成されており、櫛形電極（ＩＤＴ：Inter Digital Transducer）を有している。櫛形電極は、圧電基板１１の表面（－Ｙ側の面）においてリブ材１３に囲まれた領域に形成されている。櫛形電極は、例えば１対が形成される。なお、図１（ｂ）に示す表面波素子１２の構成は一例である。櫛形電極は、導電性の金属膜である。この導電性の金属膜としては、例えば、圧電基板１１との密着性を高めるための下地層としてクロム（Ｃｒ）や、チタン（Ｔｉ）、ニッケル（Ｎｉ）、あるいはニッケルクロム（ＮｉＣｒ）や、ニッケルチタン（ＮｉＴｉ）、ニッケルタングステン（ＮｉＷ）合金を成膜し、その上に主電極層として金（Ａｕ）や銀（Ａｇ）を成膜した積層構造が採用される。 The surface wave element 12 is formed on the piezoelectric substrate 11 and has a comb-shaped electrode (IDT: Inter Digital Transducer). The comb-shaped electrode is formed in a region surrounded by the rib member 13 on the surface of the piezoelectric substrate 11 (the surface on the −Y side). For example, a pair of comb electrodes is formed. The configuration of the surface acoustic wave element 12 shown in FIG. 1B is an example. The comb electrode is a conductive metal film. As the conductive metal film, for example, chromium (Cr), titanium (Ti), nickel (Ni), nickel chrome (NiCr), nickel as a base layer for improving adhesion to the piezoelectric substrate 11, nickel A laminated structure in which a titanium (NiTi) or nickel tungsten (NiW) alloy is formed and gold (Au) or silver (Ag) is formed as a main electrode layer thereon is employed.
　リブ材１３は、圧電基板１１に接合されており、圧電基板１１の－Ｙ側の表面１１ａにおいて、表面波素子１２を囲んだ領域に形成されている。リブ材１３は、板状の部材であり、開口Оを有している。開口Оの形状は、Ｘ方向及びＺ方向に平行な辺を有する矩形形状であるが、これに限定されず、例えば、四角形以外の多角形状や、円形状、Ｘ方向及びＺ方向に延びるクロス形状など、種々の形状であってよい。リブ材１３としては、感光性ポリイミドが用いられている。なお、リブ材１３は、ポリイミド以外の樹脂やセラミックなどであってもよい。 The rib member 13 is bonded to the piezoelectric substrate 11, and is formed in a region surrounding the surface wave element 12 on the surface 11 a on the −Y side of the piezoelectric substrate 11. The rib member 13 is a plate-like member and has an opening O. The shape of the opening О is a rectangular shape having sides parallel to the X direction and the Z direction, but is not limited to this, for example, a polygonal shape other than a square, a circular shape, a cross shape extending in the X direction and the Z direction Various shapes may be used. As the rib member 13, photosensitive polyimide is used. The rib member 13 may be a resin other than polyimide, ceramic, or the like.
　天井材１４は、Ｙ方向を厚さ方向とする板状部材である。天井材１４は、リブ材１３の開口Ｏを塞ぐようにリブ材１３に接合されている。これにより、圧電基板１１、リブ材１３、及び天井材１４に囲まれたキャビティー１７が形成される。天井材１４は、例えば、圧電デバイス１０が樹脂モールドされる際の圧力に対する強度を備える厚さに形成され、例えば５０μｍ程度の厚さに設定される。天井材１４は、リブ材１３と接合する第１面（＋Ｙ側の面）１４ａとリブ材１３と反対側の第２面（－Ｙ側の面）１４ｂとを有している。第２面１４ｂの面積Ｓ２は、第１面１４ａの面積Ｓ１より小さくなるように設定されている。天井材１４は、Ｙ方向から見た場合に接続電極１５に対応する領域を切り欠いた形状となっており、４つの角部に、それぞれ切り欠き部１８が形成されている。 The ceiling material 14 is a plate-like member whose thickness direction is the Y direction. The ceiling material 14 is joined to the rib material 13 so as to close the opening O of the rib material 13. Thereby, a cavity 17 surrounded by the piezoelectric substrate 11, the rib member 13, and the ceiling member 14 is formed. The ceiling material 14 is formed, for example, to a thickness having strength against pressure when the piezoelectric device 10 is resin-molded, and is set to a thickness of about 50 μm, for example. The ceiling member 14 has a first surface (+ Y side surface) 14 a to be joined to the rib member 13 and a second surface (−Y side surface) 14 b opposite to the rib member 13. The area S2 of the second surface 14b is set to be smaller than the area S1 of the first surface 14a. The ceiling member 14 has a shape in which a region corresponding to the connection electrode 15 is notched when viewed from the Y direction, and a notch 18 is formed at each of four corners.
　切り欠き部１８は、Ｘ方向及びＺ方向に平行な直線部分を有するＬ字形状に形成されている。なお、切り欠き部１８は、上記したＬ字形状に限定されず、曲線状などであってもよい。また、上記した４つの切り欠き部１８の一部または全部は、異なる形状であってもよい。このような切り欠き部１８の形状に関する事項は、後述する、第１天井材１９の切り欠き部２１及び第２天井材２２の切り欠き部２３、２４についても同様である。 The notch 18 is formed in an L shape having straight portions parallel to the X direction and the Z direction. In addition, the notch part 18 is not limited to the above-mentioned L-shape, A curved shape etc. may be sufficient. Further, some or all of the four cutout portions 18 described above may have different shapes. The matter regarding the shape of the notch 18 is the same for the notch 21 of the first ceiling member 19 and the notches 23 and 24 of the second ceiling member 22 described later.
　また、切り欠き部１８は、Ｙ方向から見た場合の矩形形状における角部に形成されることに限定されず、例えば辺部の中央部分などに形成されてもよい。また、切り欠き部１８の数についても４つに限定されず、接続電極１５の数などに応じて適宜設定が可能である。 Further, the cutout portion 18 is not limited to being formed at a corner portion in a rectangular shape when viewed from the Y direction, and may be formed at, for example, the central portion of the side portion. Further, the number of notches 18 is not limited to four, and can be set as appropriate according to the number of connection electrodes 15 and the like.
　天井材１４は、第１天井材２１と第２天井材２２とから構成されている。第１天井材２１及び第２天井材２２は、それぞれ板状の部材である。第１天井材２１及び第２天井材２２のそれぞれの厚さ（Ｙ方向の長さ）は、例えば、２０μｍ～２５μｍに設定される。第１天井材２１と第２天井材２２とは、同一の厚さで形成されているが、それぞれ異なる厚さであってもよい。第１天井材２１及び第２天井材２２は、例えば、感光性ポリイミドが用いられている。なお、第１天井材２１及び第２天井材２２は、ポリイミドにフィラーを混入させて耐圧性を向上させてもよい。フィラーとしては、例えば、マイカ（雲母）粒子が用いられる。また、第１天井材２１及び第２天井材２２は、ポリイミド以外の樹脂やセラミックなどであってもよい。また、第１天井材２１と第２天井材２２とは、異なる材料から形成されてもよい。なお、上記した、天井材１４、第１天井材２１、及び第２天井材２２に関する事項については、切り欠き部１８、２３、２４の構成を除き、後述する第２実施形態に係る天井材２１４、第１天井材２２１、及び第２天井材２２２についても同様に適用が可能である。 The ceiling material 14 includes a first ceiling material 21 and a second ceiling material 22. The first ceiling material 21 and the second ceiling material 22 are plate-shaped members, respectively. The thickness (the length in the Y direction) of each of the first ceiling material 21 and the second ceiling material 22 is set to 20 μm to 25 μm, for example. The first ceiling member 21 and the second ceiling member 22 are formed with the same thickness, but may have different thicknesses. For example, photosensitive polyimide is used for the first ceiling member 21 and the second ceiling member 22. In addition, the 1st ceiling material 21 and the 2nd ceiling material 22 may mix a filler with a polyimide, and may improve a pressure | voltage resistance. As the filler, for example, mica (mica) particles are used. Further, the first ceiling member 21 and the second ceiling member 22 may be a resin or ceramic other than polyimide. Further, the first ceiling material 21 and the second ceiling material 22 may be formed of different materials. In addition, about the matter regarding the ceiling material 14, the 1st ceiling material 21, and the 2nd ceiling material 22 mentioned above, except the structure of the notch part 18, 23, 24, the ceiling material 214 which concerns on 2nd Embodiment mentioned later. The first ceiling member 221 and the second ceiling member 222 can be similarly applied.
　第１天井材２１は、第２天井材２２の＋Ｙ側に配置されており、リブ材１３に接合される第１面１４ａを備えている。第１天井材２１は、４つの切り欠き部２３を有している。第２天井材２２は、第１天井材２１に積層されている。第２天井材２２は、第１天井材２１の表面において、Ｙ方向から見てリブ材１３の開口Ｏを含む領域に配置されている。この構成により、キャビティー１７の天井部分の厚さが確保される。なお、第１天井材２１において第２天井材２２が配置される位置は、上記構成に限定されない。第２天井材２２は、第２面１４ｂを備えている。また、第２天井材２２は、第１天井材２１の４つの切り欠き部２３のそれぞれに対応する位置に、切り欠き部２３より大きな４つの切り欠き部２４を有している。これら４つの切り欠き部２４のそれぞれは、Ｙ方向から見た形状が対応する第１天井材２１の切り欠き部２３と同様の形状となっている。 The first ceiling member 21 is disposed on the + Y side of the second ceiling member 22 and includes a first surface 14 a that is joined to the rib member 13. The first ceiling member 21 has four cutout portions 23. The second ceiling material 22 is laminated on the first ceiling material 21. The second ceiling member 22 is arranged on the surface of the first ceiling member 21 in a region including the opening O of the rib member 13 when viewed from the Y direction. With this configuration, the thickness of the ceiling portion of the cavity 17 is ensured. In addition, the position where the 2nd ceiling material 22 is arrange | positioned in the 1st ceiling material 21 is not limited to the said structure. The second ceiling member 22 includes a second surface 14b. Further, the second ceiling member 22 has four cutout portions 24 that are larger than the cutout portions 23 at positions corresponding to the four cutout portions 23 of the first ceiling material 21. Each of these four cutout portions 24 has the same shape as the cutout portion 23 of the first ceiling member 21 corresponding to the shape seen from the Y direction.
　図１（ａ）に示すように、第２天井材２２の４つの切り欠き部２４のそれぞれは、対応する第１天井材２１の切り欠き部２３に対して、Ｙ方向から見て、内側（第２天井材２２の中心側）に離間して配置されている。また、図１（ｂ）に示すように、切り欠き部２３及び切り欠き部２４の側面は、Ｙ方向に平行な面となっている。これにより、天井材１４の切り欠き部１４は、第１面１４ａから第２面１４ｂにかけて大きくなるように形成され、側面は階段状に形成されている。 As shown in FIG. 1A, each of the four cutout portions 24 of the second ceiling member 22 has an inner side (as viewed from the Y direction with respect to the cutout portion 23 of the corresponding first ceiling member 21). The second ceiling member 22 is disposed at a distance from the center of the second ceiling member 22. Moreover, as shown in FIG.1 (b), the side surface of the notch part 23 and the notch part 24 is a surface parallel to a Y direction. Thereby, the notch part 14 of the ceiling material 14 is formed so that it may become large from the 1st surface 14a to the 2nd surface 14b, and the side surface is formed in step shape.
　なお、切り欠き部１８の側面の一部または全部は、このような階段状に形成されなくてもよい。例えば、第１及び第２天井材２１、２２の切り欠き部２３、２４の一方又は双方の側面は、第１面１４ａから第２面１４ｂにかけて切り欠き形状が除々に大きくなるようにＹ方向に対して傾斜した傾斜面であってもよい。また、第２天井材２２の切り欠き部２４の一部は、Ｙ方向から見て、対応する第１天井材２１の切り欠き部２３に対して重なるように形成されてもよく、この場合、重なった部分の切り欠き部１８の側面は、Ｙ方向に対して平行な平面状に形成される。 In addition, a part or all of the side surface of the notch 18 may not be formed in such a staircase shape. For example, one or both side surfaces of the cutout portions 23 and 24 of the first and second ceiling members 21 and 22 are arranged in the Y direction so that the cutout shape gradually increases from the first surface 14a to the second surface 14b. It may be an inclined surface inclined with respect to the surface. Further, a part of the notch portion 24 of the second ceiling material 22 may be formed so as to overlap the notch portion 23 of the corresponding first ceiling material 21 when viewed from the Y direction. The side surface of the overlapped cutout portion 18 is formed in a planar shape parallel to the Y direction.
　天井材１４は、上記した構成に限定されず、例えば、第１天井材２１と第２天井材２２とから構成されることに代えて、単一の部材から形成されてもよい。この場合、表面（＋Ｙ側の面）に第１面１４ａが形成され、裏面（－Ｙ側の面）に第２面１４ｂが形成される。また、天井材１４は、２枚の第１天井材２１及び第２天井材２２で構成されることに限定されず、３枚以上が積層されてもよい。この場合、第１面１４ａの面積Ｓ１から順に面積を小さくして第２面１４ｂの面積Ｓ２となるように、面積が異なる板状部材を積層した構成であってもよい。なお、上記事項は、後述する第２実施形態に係る天井材２１４、第１天井材４２１、及び第２天井材４２２についても同様に適用が可能である。 The ceiling material 14 is not limited to the above-described configuration, and may be formed from a single member, for example, instead of being configured from the first ceiling material 21 and the second ceiling material 22. In this case, the first surface 14a is formed on the front surface (+ Y side surface), and the second surface 14b is formed on the back surface (−Y side surface). Moreover, the ceiling material 14 is not limited to being comprised by the two 1st ceiling materials 21 and the 2nd ceiling material 22, Three or more sheets may be laminated | stacked. In this case, a configuration may be adopted in which plate-like members having different areas are laminated so that the area is reduced from the area S1 of the first surface 14a to the area S2 of the second surface 14b. The above items can be similarly applied to the ceiling material 214, the first ceiling material 421, and the second ceiling material 422 according to the second embodiment described later.
　上記したリブ材１３及び天井材１４は、Ｙ方向から見て両者が重なる領域の幅（シールパス）Ｗの長さが確保されている。すなわち、リブ材１３と天井材１４との接合面積が確保されているので、互いの密着性が維持されており、キャビティー１７の気密性が確保されている。また、天井材１４は、面積Ｓ１より面積Ｓ２が小さい構成となっているが、天井材１４の厚さＬが維持されるので、天井材１４の耐圧性が確保されている。なお、後述する第２実施形態に係るリブ材１３と天井材２１４との構成においても同様である。 The above-described rib member 13 and ceiling member 14 have a width (seal path) W of a region where both overlap as viewed from the Y direction. That is, since the bonding area between the rib member 13 and the ceiling member 14 is secured, the mutual adhesion is maintained, and the airtightness of the cavity 17 is secured. Further, the ceiling material 14 has a configuration in which the area S2 is smaller than the area S1, but since the thickness L of the ceiling material 14 is maintained, the pressure resistance of the ceiling material 14 is ensured. The same applies to the configuration of the rib member 13 and the ceiling member 214 according to the second embodiment described later.
　接続電極１５は、圧電基板１１の表面（－Ｙ側の面）１１ａに形成されている。接続電極１５は、圧電基板１１のリブ材１３の外側部分であって、第１及び第２天井材２１、２２の切り欠き部２３、２４に対応する領域に形成されている。接続電極１５は、不図示の配線を介して、表面波素子１２の櫛形電極と電気的に接続されている。接続電極１５は、例えば、ＵＢＭ（Under Bump Metal）であり、金や銀などの金属から形成されている。接続電極１５は、例えばめっきにより形成されている。 The connection electrode 15 is formed on the surface (−Y side surface) 11 a of the piezoelectric substrate 11. The connection electrode 15 is an outer portion of the rib member 13 of the piezoelectric substrate 11 and is formed in a region corresponding to the notches 23 and 24 of the first and second ceiling members 21 and 22. The connection electrode 15 is electrically connected to the comb electrode of the surface acoustic wave element 12 through a wiring (not shown). The connection electrode 15 is, for example, UBM (Under Bump Metal), and is formed of a metal such as gold or silver. The connection electrode 15 is formed by plating, for example.
　接続部材１６は、後述する実装基板３０の端子３１と接続電極１５とを電気的に接続するための導電性の部材である。接続部材１６としては、例えば、半田ボールである。なお、接続部材１６は、半田ボールに限定されず、他の導電ボールなどであってもよい。接続部材１６は、接続電極１５に接合されて保持されている。なお、圧電デバイス１０において、接続部材１６を保持させるか否かは任意である。 The connection member 16 is a conductive member for electrically connecting a terminal 31 of the mounting substrate 30 to be described later and the connection electrode 15. The connection member 16 is, for example, a solder ball. The connecting member 16 is not limited to a solder ball, and may be another conductive ball. The connection member 16 is bonded to and held by the connection electrode 15. In the piezoelectric device 10, whether or not to hold the connection member 16 is arbitrary.
　次に、実装基板３０に搭載される際の圧電デバイス１０について、図面を用いて説明する。図２は、実装基板３０に搭載された圧電デバイス１０を示し、（ａ）は断面図、（ｂ）は（ａ）の要部を拡大した断面図である。実装基板３０は、例えば圧電デバイス１０が搭載される通信機器などにおける内部の配線基板である。端子３１は、例えば実装基板３０の表面に形成されたランドパターンの構成となっている。圧電デバイス１０は、位置合わせされて実装基板３０上に載置される。次いで、リフロー工程を経て、図２に示すように、実装基板３０に圧電デバイス１０が接合される。 Next, the piezoelectric device 10 when mounted on the mounting substrate 30 will be described with reference to the drawings. 2A and 2B show the piezoelectric device 10 mounted on the mounting substrate 30, where FIG. 2A is a cross-sectional view, and FIG. 2B is an enlarged cross-sectional view of the main part of FIG. The mounting substrate 30 is an internal wiring substrate in, for example, a communication device on which the piezoelectric device 10 is mounted. The terminal 31 has, for example, a land pattern configuration formed on the surface of the mounting substrate 30. The piezoelectric device 10 is aligned and placed on the mounting substrate 30. Next, through a reflow process, the piezoelectric device 10 is bonded to the mounting substrate 30 as shown in FIG.
　接続部材１６は、リフロー工程において加熱されることにより、一部が溶融する。そして、接続部材１６は、Ｙ方向に潰れるように変形し、端子３１の表面に沿って拡がり固着する。その際、天井材１４が、第１面１４ａから第２面１４ｂにかけて小さくなるように形成されているので、接続部材１６が変形しても、天井材１４の下面（－Ｙ側の面）に入り込むことが抑制される。 The connection member 16 is partially melted by being heated in the reflow process. Then, the connection member 16 is deformed so as to be crushed in the Y direction, and is spread and fixed along the surface of the terminal 31. At this time, since the ceiling material 14 is formed so as to become smaller from the first surface 14a to the second surface 14b, even if the connection member 16 is deformed, the ceiling material 14 is formed on the lower surface (the surface on the −Y side) of the ceiling material 14. Intrusion is suppressed.
　次に、圧電デバイス１０の製造方法の一例について、図面を用いて説明する。図３は、圧電デバイス１０の製造方法の一例を示すフローチャートである。図４～図６は、圧電デバイス１０の製造方法の製造工程の一例を示す図である。なお、図４～図６において圧電ウェハＡＷは、主として１個の圧電デバイス１０が形成される領域を示し、他の領域については省略している。本製造方法は、図３に示すフローチャートに沿って説明する。以下に説明する圧電デバイス１０の製造方法は、表面波素子１２やリブ材１３の形成などの工程をウェハ上で一括して行い、最後にウェハを切断して個別化するウェハレベルパッケージングの手法が採用される。なお、圧電デバイス１０の製造方法は、このようなウェハレベルパッケージングの手法を用いるか否かは任意であり、先に表面波素子１２が形成された圧電基板１１を個別化し、その後、リブ材１３の形成などの工程を行ってもよい。 Next, an example of a method for manufacturing the piezoelectric device 10 will be described with reference to the drawings. FIG. 3 is a flowchart illustrating an example of a method for manufacturing the piezoelectric device 10. 4 to 6 are diagrams illustrating an example of the manufacturing process of the method for manufacturing the piezoelectric device 10. FIG. 4 to 6, the piezoelectric wafer AW mainly indicates a region where one piezoelectric device 10 is formed, and other regions are omitted. This manufacturing method will be described along the flowchart shown in FIG. The method for manufacturing the piezoelectric device 10 described below is a wafer level packaging method in which processes such as the formation of the surface acoustic wave element 12 and the rib material 13 are collectively performed on the wafer, and finally the wafer is cut and individualized. Is adopted. Note that the method for manufacturing the piezoelectric device 10 is optional whether or not such a wafer level packaging method is used. The piezoelectric substrate 11 on which the surface wave element 12 is first formed is individualized, and then the rib material is used. Steps such as forming 13 may be performed.
　図３に示すように、先ず、圧電基板１１を多面取りする圧電ウェハＡＷが用意される（ステップＳ０１）。圧電ウェハＡＷは、例えば、タンタル酸リチウム、ニオブ酸リチウム、あるいは水晶の単結晶から所定の厚さで切り出される。次いで、図４（ａ）に示すように、圧電ウェハＡＷは、必要な厚さに調整され、さらに表面が洗浄される。 As shown in FIG. 3, first, a piezoelectric wafer AW that multi-planarizes the piezoelectric substrate 11 is prepared (step S01). The piezoelectric wafer AW is cut out with a predetermined thickness from, for example, lithium tantalate, lithium niobate, or a single crystal of quartz. Next, as shown in FIG. 4A, the piezoelectric wafer AW is adjusted to a required thickness, and the surface is further cleaned.
　次に、図４（ｂ）に示すように、圧電ウェハＡＷ（圧電基板１１）に表面波素子１２が形成される（ステップＳ０２）。本工程では、メタルマスクを介したスパッタリングや真空蒸着などの成膜手法を用いて、圧電ウェハＡＷの表面（－Ｙ側の面）に、櫛形電極を構成する導電性の金属膜がパターニングされる。これにより、圧電ウェハＡＷ（圧電基板１１）に表面波素子１２が形成される。なお、表面波素子１２の櫛形電極は、フォトリソグラフィー及びエッチングなどの手法により形成されてもよい。また、櫛形電極と接続する配線等も櫛形電極と同時または個別に形成される。 Next, as shown in FIG. 4B, the surface wave element 12 is formed on the piezoelectric wafer AW (piezoelectric substrate 11) (step S02). In this step, the conductive metal film constituting the comb-shaped electrode is patterned on the surface (−Y side surface) of the piezoelectric wafer AW by using a film forming method such as sputtering or vacuum deposition through a metal mask. . As a result, the surface acoustic wave element 12 is formed on the piezoelectric wafer AW (piezoelectric substrate 11). The comb electrode of the surface acoustic wave element 12 may be formed by a technique such as photolithography and etching. Further, wirings connected to the comb electrodes are also formed simultaneously or separately with the comb electrodes.
　続いて、図４（ｃ）に示すように、リブ材１３及び接続電極１５が形成される（ステップＳ０３）。本工程では、先ず、圧電ウェハＡＷの－Ｙ側の面に、感光性ポリイミドのフィルムを配置する。次いで、この感光性ポリイミドのフィルムに対して、リブ材１３の形成領域を備えるフォトマスクを介して露光する。これにより、感光性ポリイミドの露光部分が硬化して圧電ウェハＡＷに接合し、表面波素子１２を囲むように圧電ウェハＡＷ（圧電基板１１）上にリブ材１３が形成される。また、圧電ウェハＡＷの表面（－Ｙ側の面）に、例えば、金や銀などがめっきされることにより接続電極１５が形成される。 Subsequently, as shown in FIG. 4C, the rib member 13 and the connection electrode 15 are formed (step S03). In this step, first, a photosensitive polyimide film is disposed on the −Y side surface of the piezoelectric wafer AW. Next, the photosensitive polyimide film is exposed through a photomask having a rib material 13 formation region. As a result, the exposed portion of the photosensitive polyimide is cured and bonded to the piezoelectric wafer AW, and the rib member 13 is formed on the piezoelectric wafer AW (piezoelectric substrate 11) so as to surround the surface wave element 12. Further, the connection electrode 15 is formed by plating, for example, gold, silver, or the like on the surface (−Y side surface) of the piezoelectric wafer AW.
　続いて、第１天井材２１が接合される（ステップＳ０４）。本工程では、先ず、図４（ｄ）に示すように、圧電ウェハＡＷの－Ｙ側に、第１天井材２１を形成する所定の厚さの感光性ポリイミドのフィルムＲ１が配置される。次いで、図４（ｅ）に示すように、フィルムＲ１に対して、第１天井材２１の形成領域を備えるフォトマスクＭ１を介して露光する。これにより、図４（ｆ）に示すように、開口Ｏを塞ぐようにリブ材１３に接合された第１天井材２１が形成される。 Subsequently, the first ceiling member 21 is joined (step S04). In this step, first, as shown in FIG. 4D, a photosensitive polyimide film R1 having a predetermined thickness for forming the first ceiling member 21 is disposed on the −Y side of the piezoelectric wafer AW. Next, as illustrated in FIG. 4E, the film R <b> 1 is exposed through a photomask M <b> 1 having a formation area for the first ceiling material 21. As a result, as shown in FIG. 4 (f), the first ceiling member 21 joined to the rib member 13 so as to close the opening O is formed.
　続いて、第２天井材２２が積層される（ステップＳ０５）。本工程では、先ず、図４（ｇ）に示すように、圧電ウェハＡＷの－Ｙ側に、第２天井材２２を形成する所定の厚さの感光性ポリイミドのフィルムＲ２が配置される。次いで、図４（ｈ）に示すように、第２天井材２２形成領域を備えるフォトマスクＭ２を介して露光する。これにより、図４（ｉ）に示すように、第１天井材２１に積層された第２天井材２２が形成される。 Subsequently, the second ceiling material 22 is laminated (step S05). In this step, first, as shown in FIG. 4G, a photosensitive polyimide film R2 having a predetermined thickness for forming the second ceiling member 22 is disposed on the −Y side of the piezoelectric wafer AW. Next, as shown in FIG. 4H, exposure is performed through a photomask M2 including a second ceiling material 22 formation region. Thereby, as shown in FIG.4 (i), the 2nd ceiling material 22 laminated | stacked on the 1st ceiling material 21 is formed.
　続いて、接続部材１６が接合される（ステップＳ０６）。図４（ｊ）に示すように、圧電ウェハＡＷの接続電極１５上には、それぞれ接続部材１６が配置される。次いで、接続部材１６は接続電極１５に溶着される。 Subsequently, the connecting member 16 is joined (step S06). As shown in FIG. 4J, connection members 16 are disposed on the connection electrodes 15 of the piezoelectric wafer AW. Next, the connection member 16 is welded to the connection electrode 15.
　続いて、圧電ウェハＡＷに対して、予め設定されたスクライブラインＳＬに沿ってダイシングソー等により切断加工される（ステップＳ０７）。これにより、個々の圧電デバイス１０に切り分けられ、圧電デバイス１０が完成する。 Subsequently, the piezoelectric wafer AW is cut by a dicing saw or the like along a preset scribe line SL (step S07). Thereby, it cuts into each piezoelectric device 10, and the piezoelectric device 10 is completed.
　このように、第１実施形態によれば、接続部材１６が変形しても、天井材１４の下面（－Ｙ側の面）に入り込むことが抑制されるので、天井材１４を厚く形成して破損を防止するとともに、圧電デバイス１０と実装基板３０との接合を確実にして、実装基板３０に対する圧電デバイス１０の電気的な接続不良や圧電デバイス１０の脱落を防止して不良品の発生を抑制し、信頼性が高い圧電デバイス１０を提供することができる。 As described above, according to the first embodiment, even if the connecting member 16 is deformed, it is suppressed from entering the lower surface (the surface on the −Y side) of the ceiling material 14, so the ceiling material 14 is formed thick. In addition to preventing damage, the bonding between the piezoelectric device 10 and the mounting substrate 30 is ensured, and the electrical connection of the piezoelectric device 10 to the mounting substrate 30 and the falling off of the piezoelectric device 10 are prevented, thereby suppressing the occurrence of defective products. In addition, the highly reliable piezoelectric device 10 can be provided.
　＜第２実施形態＞
　続いて、第２実施形態について、図７を用いて説明する。図７は、第２実施形態に係る圧電デバイス２１０の一例を示し、（ａ）は底面図、（ｂ）は要部を拡大した断面図である。なお、図７（ａ）においては、接続部材１６を透過して表している。以下の説明において第１実施形態と同一または同等の構成部分については同一符号を付けて説明を省略または簡略化する。圧電デバイス２１０は、図７に示すように、天井材２１４を有している。 Second Embodiment
Next, the second embodiment will be described with reference to FIG. 7A and 7B show an example of the piezoelectric device 210 according to the second embodiment, where FIG. 7A is a bottom view and FIG. 7B is an enlarged cross-sectional view of the main part. In FIG. 7A, the connecting member 16 is shown in a transparent manner. In the following description, the same or equivalent components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified. The piezoelectric device 210 has a ceiling material 214 as shown in FIG.
　天井材２１４は、リブ材１３と接合する第１面（＋Ｙ側の面）２１４ａとリブ材１３と反対側の第２面（－Ｙ側の面）２１４ｂとを有している。第１実施形態と同様に、第２面２１４ｂの面積は、第１面２１４ａの面積より小さくなるように設定されている。天井材２１４は、第１天井材２２１と第２天井材２２２とから構成されている。 The ceiling material 214 has a first surface (+ Y side surface) 214a to be joined to the rib material 13 and a second surface (−Y side surface) 214b opposite to the rib material 13. Similar to the first embodiment, the area of the second surface 214b is set to be smaller than the area of the first surface 214a. The ceiling material 214 includes a first ceiling material 221 and a second ceiling material 222.
　天井材２１４、第１天井材２２１、及び第２天井材２２２のそれぞれは、切り欠き部１８、２３、２４の構成に代えて後述する貫通孔２１８、２２３、２２４が設けられている点を除き、それぞれ第１実施形態に係る天井材１４、第１天井材２１、及び第２天井材２２と同様の構成となっている。第１天井材２２１は、リブ材１３に接合されており、第１面２１４ａを有している。第２天井材２２２は、第１天井材２２１の－Ｙ側に配置されかつ第１天井材２２１に積層されている。第２天井材２２２は、第２面２１４ｂを有している。 Each of the ceiling material 214, the first ceiling material 221, and the second ceiling material 222 is provided with through holes 218, 223, and 224, which will be described later, instead of the configuration of the notches 18, 23, and 24. These are the same configurations as the ceiling material 14, the first ceiling material 21, and the second ceiling material 22 according to the first embodiment, respectively. The first ceiling member 221 is joined to the rib member 13 and has a first surface 214a. The second ceiling material 222 is disposed on the −Y side of the first ceiling material 221 and is laminated on the first ceiling material 221. The second ceiling material 222 has a second surface 214b.
　天井材２１４は、４つの貫通孔２１８を有している。これら４つの貫通孔２１８は、接続電極１５とＹ方向から見て重なるように配置されている。貫通孔２１８には、接続部材１６が配置されている。貫通孔２１８は、第１天井材２２１の貫通孔２２３と、第２天井材２２２の貫通孔２２４と、から構成されている。貫通孔２１８、２２３、２２４は、ＸＺ平面に沿った断面が円形状となるように形成されている。ただし、貫通孔２１８等の断面は、多角形状などであってもよい。貫通孔２１８は、第１面２１４ａから第２面２１４ｂにかけて大きくなるように形成され、貫通孔２１８の側面は階段状に形成されている。 The ceiling material 214 has four through holes 218. These four through holes 218 are arranged so as to overlap with the connection electrode 15 when viewed from the Y direction. The connecting member 16 is disposed in the through hole 218. The through hole 218 includes a through hole 223 in the first ceiling member 221 and a through hole 224 in the second ceiling member 222. The through holes 218, 223, and 224 are formed so that a cross section along the XZ plane has a circular shape. However, the cross-section of the through hole 218 or the like may be a polygonal shape or the like. The through hole 218 is formed so as to increase from the first surface 214a to the second surface 214b, and the side surface of the through hole 218 is formed in a stepped shape.
　なお、貫通孔２１８の側面の一部または全部は、階段状に形成されなくてもよい。例えば、第１及び第２天井材２２１、２２２の貫通孔２２３、２２４の一方又は双方の側面は、Ｙ方向に平行な面に代えて、貫通孔２２３、２２４の断面形状が第１面２１４ａから第２面２１４ｂにかけて除々に大きくなるように形成され、かつＹ方向に対して傾斜した傾斜面であってもよい。また、第１天井材２２１の貫通孔２２３と、第２天井材２２２の貫通孔２２４とが、Ｙ方向から見て側面の一部が重なるように形成されてもよい。この場合、貫通孔２１８の側面は、Ｙ方向に平行な部分を有する構成となる。 In addition, a part or all of the side surface of the through hole 218 may not be formed in a staircase shape. For example, one or both side surfaces of the through holes 223 and 224 of the first and second ceiling members 221 and 222 are replaced with surfaces parallel to the Y direction, and the cross-sectional shape of the through holes 223 and 224 is from the first surface 214a. It may be an inclined surface formed so as to gradually increase toward the second surface 214b and inclined with respect to the Y direction. Further, the through hole 223 of the first ceiling member 221 and the through hole 224 of the second ceiling member 222 may be formed such that a part of the side faces overlaps when viewed from the Y direction. In this case, the side surface of the through hole 218 is configured to have a portion parallel to the Y direction.
　以上説明した本実施形態に係る圧電デバイス２１０は、第１実施形態と同様の効果を有する。なお、圧電デバイス２１０の製造方法については、上記した圧電デバイス１０の製造方法とほぼ同様である。 The piezoelectric device 210 according to this embodiment described above has the same effect as that of the first embodiment. The method for manufacturing the piezoelectric device 210 is almost the same as the method for manufacturing the piezoelectric device 10 described above.
　＜第３実施形態＞
　続いて、第３実施形態について、図８を用いて説明する。図８は、第３実施形態に係る圧電部品１００の一例を示す断面図である。以下の説明において上記した実施形態と同一または同等の構成部分については同一符号を付けて説明を省略または簡略化する。図８に示すように、電子部品１００は、圧電デバイス１０と、実装基板３０と、樹脂部４０とを有している。圧電デバイス１０と実装基板３０とは、互いに接合されかつ電気的に接続されている。 <Third Embodiment>
Next, a third embodiment will be described with reference to FIG. FIG. 8 is a cross-sectional view illustrating an example of the piezoelectric component 100 according to the third embodiment. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified. As shown in FIG. 8, the electronic component 100 includes the piezoelectric device 10, the mounting substrate 30, and the resin portion 40. The piezoelectric device 10 and the mounting substrate 30 are bonded and electrically connected to each other.
　実装基板３０の－Ｙ側の面には、外部端子３２が設けられている。外部端子３２は、圧電部品１００が配線基板に対して搭載される際の端子である。外部端子３２は、実装基板３０において、例えば４つが形成されている。これら４つの外部端子３２のそれぞれは、Ｙ方向から見て、例えば端子３１に対応する領域に形成されている。外部端子３２は、不図示の配線を介して端子３１と電気的に接続されている。 The external terminal 32 is provided on the surface of the mounting substrate 30 on the −Y side. The external terminal 32 is a terminal when the piezoelectric component 100 is mounted on the wiring board. For example, four external terminals 32 are formed on the mounting substrate 30. Each of these four external terminals 32 is formed, for example, in a region corresponding to the terminal 31 when viewed from the Y direction. The external terminal 32 is electrically connected to the terminal 31 via a wiring (not shown).
　樹脂部４０は、圧電デバイス１０と実装基板３０との間に配置されている。樹脂部４０は、例えば、エポキシ樹脂である。なお、樹脂部４０の樹脂としては、ポリイミドなどが用いられてもよい。なお、樹脂部４０は、圧電デバイス１０と実装基板３０との間において隙間なく全体的に充填されているが、空隙部分を形成するように配置されてもよい。 Resin portion 40 is disposed between piezoelectric device 10 and mounting substrate 30. The resin part 40 is, for example, an epoxy resin. Note that polyimide or the like may be used as the resin of the resin portion 40. The resin portion 40 is entirely filled with no gap between the piezoelectric device 10 and the mounting substrate 30, but may be arranged so as to form a gap portion.
　次に、電子部品１００の製造方法の一例について説明する。先ず、実装基板３０を多面取りする基板が用意される。次いで、基板上に圧電デバイス１０を載置した状態でリフロー工程を行い、実装基板３０に圧電デバイス１０が接合される。続いて、圧電デバイス１０と基板との間に樹脂を充填し、樹脂部４０が形成される。なお、樹脂部４０は、例えば、トランスファー成形により形成される。ただし、樹脂部４０は、コンプレッション成形やインジェクション成形などにより形成されてもよい。続いて、基板が切断されて個々の電子部品１００が取り出される。以上の工程により電子部品１００が完成する。 Next, an example of a method for manufacturing the electronic component 100 will be described. First, a substrate on which the mounting substrate 30 is multi-planar is prepared. Next, a reflow process is performed in a state where the piezoelectric device 10 is placed on the substrate, and the piezoelectric device 10 is bonded to the mounting substrate 30. Subsequently, resin is filled between the piezoelectric device 10 and the substrate, and the resin portion 40 is formed. In addition, the resin part 40 is formed by transfer molding, for example. However, the resin part 40 may be formed by compression molding or injection molding. Subsequently, the substrate is cut and individual electronic components 100 are taken out. The electronic component 100 is completed through the above steps.
　このような第３実施形態によれば、電子部品１００の製造工程において、圧電デバイス１０と実装基板３０との接合の際に、天井材１４と実装基板３０との間に接続部材１６が入り込むことが抑制されるので、実装基板３０に対する圧電デバイス１０の接合や電気的な接続の不良を防止して不良品の発生を抑制することができるとともに、天井材１４の強度が確保されるので、樹脂部４０が形成される際の天井材１４の破損を防止することができる。よって、高品質でありかつ信頼性の高い電子部品１００を提供することができる。
また、電子部品１００によれば、実装基板３０に圧電デバイス１０が搭載されかつ樹脂部４０を有する構成となっているので、圧電デバイスとしての耐久性を向上させることができる。 According to the third embodiment, the connecting member 16 enters between the ceiling material 14 and the mounting substrate 30 when the piezoelectric device 10 and the mounting substrate 30 are joined in the manufacturing process of the electronic component 100. Therefore, it is possible to prevent defective bonding of the piezoelectric device 10 to the mounting substrate 30 and electrical connection to suppress the generation of defective products, and to secure the strength of the ceiling material 14. It is possible to prevent the ceiling material 14 from being damaged when the portion 40 is formed. Therefore, it is possible to provide the electronic component 100 with high quality and high reliability.
Moreover, according to the electronic component 100, since the piezoelectric device 10 is mounted on the mounting substrate 30 and has the resin portion 40, durability as a piezoelectric device can be improved.
　以上、実施形態について説明したが、本発明は、上記した説明に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更が可能である。例えば、上記した実施形態の一部の構成を他の実施形態の構成と置き換えてもよく、上記した実施形態の構成を組み合わせてもよい。 As mentioned above, although embodiment was described, this invention is not limited to above-mentioned description, A various change is possible in the range which does not deviate from the summary of this invention. For example, a part of the configuration of the above embodiment may be replaced with the configuration of another embodiment, or the configuration of the above embodiment may be combined.
　Ｏ…開口
　Ｓ１…第１面の面積
　Ｓ２…第２面の面積
　１０、２１０…圧電デバイス
　１１…圧電基板
　１２…表面波素子
　１３…リブ材
　１４、２１４…天井材
　１４ａ、２１４ａ…第１面
　１４ｂ、２１４ｂ…第２面
　１５…接続電極
　１６…接続部材
　２１、２２２…第１天井材
　２２、２２１…第２天井材
　３０…実装基板
　３１…端子
　４０…樹脂部
　１００…電子部品 O ... Opening S1 ... Area of first surface S2 ... Area of second surface 10, 210 ... Piezoelectric device 11 ... Piezoelectric substrate 12 ... Surface wave element 13 ... Rib material 14, 214 ... Ceiling material 14a, 214a ... First surface 14b , 214b ... second surface 15 ... connection electrode 16 ... connection member 21, 222 ... first ceiling material 22, 221 ... second ceiling material 30 ... mounting substrate 31 ... terminal 40 ... resin part 100 ... electronic component

Claims (8)

  1. 　圧電基板に形成される表面波素子と、前記表面波素子を囲んで前記圧電基板上に接合されるリブ材と、前記リブ材の開口を塞ぐように前記リブ材に接合される板状の天井材と、を有する圧電デバイスであって、前記天井材は、前記リブ材と接合する第１面の面積より、前記リブ材と反対側の第２面の面積が小さく形成される圧電デバイス。 A surface wave element formed on the piezoelectric substrate, a rib member surrounding the surface wave element and bonded to the piezoelectric substrate, and a plate-shaped ceiling bonded to the rib member so as to close the opening of the rib member The ceiling member is a piezoelectric device formed such that the area of the second surface opposite to the rib material is smaller than the area of the first surface joined to the rib material.
  2. 　前記天井材は、前記リブ材に接合される前記第１面を備える第１天井材と、前記第１面より面積が小さい前記第２面を備えかつ前記第１天井材に積層される第２天井材と、を有する請求項１記載の圧電デバイス。 The ceiling material includes a first ceiling material including the first surface joined to the rib material, and a second surface having a smaller area than the first surface, and is stacked on the first ceiling material. The piezoelectric device according to claim 1, further comprising a ceiling material.
  3. 　前記表面波素子と電気的に接続されかつ前記圧電基板の前記リブ材の外側部分に形成された接続電極を備える請求項１または請求項２記載の圧電デバイス。 The piezoelectric device according to claim 1 or 2, further comprising a connection electrode electrically connected to the surface wave element and formed on an outer portion of the rib member of the piezoelectric substrate.
  4. 　前記接続電極に接合しかつ実装基板の端子と前記接続電極とを電気的に接続するための導電性の接続部材を備える請求項３記載の圧電デバイス。 4. The piezoelectric device according to claim 3, further comprising a conductive connection member that is bonded to the connection electrode and electrically connects a terminal of the mounting substrate and the connection electrode.
  5. 　前記接続部材は、半田ボールである請求項４記載の圧電デバイス。 The piezoelectric device according to claim 4, wherein the connecting member is a solder ball.
  6. 　圧電基板の表面に表面波素子を形成する工程と、前記表面波素子を囲むように前記圧電基板上にリブ材を形成する工程と、前記リブ材の開口を塞ぐように前記リブ材に板状の天井材を接合する工程と、を有する圧電デバイス製造方法であって、前記天井材に対して、前記リブ材と接合する第１面の面積より、前記リブ材と反対側の第２面の面積を小さくする工程を含む圧電デバイス製造方法。 Forming a surface wave element on a surface of the piezoelectric substrate; forming a rib material on the piezoelectric substrate so as to surround the surface wave element; and forming a plate on the rib material so as to close an opening of the rib material. Bonding the ceiling material of the piezoelectric device, the piezoelectric device manufacturing method comprising: a second surface on the opposite side of the rib material from the area of the first surface to be bonded to the rib material with respect to the ceiling material. A method of manufacturing a piezoelectric device including a step of reducing an area.
  7. 　前記天井材は、前記リブ材に接合される前記第１面を備える第１天井材と、前記第１面より面積が小さい前記第２面を備える第２天井材と、を有し、前記第１天井材を前記リブ材に接合する工程と、前記第１天井材に前記第２天井材を積層する工程と、を含む請求項６記載の圧電デバイス製造方法。 The ceiling material includes: a first ceiling material including the first surface joined to the rib material; and a second ceiling material including the second surface having a smaller area than the first surface. The method for manufacturing a piezoelectric device according to claim 6, comprising: joining one ceiling material to the rib material; and laminating the second ceiling material on the first ceiling material.
  8. 　請求項１～請求項５のいずれか１項に記載の圧電デバイスと、表面に端子を備えかつ前記端子を介して前記圧電デバイスと電気的に接続される実装基板と、少なくとも前記圧電デバイスと前記実装基板との間に配置される樹脂部と、を有する電子部品。 The piezoelectric device according to any one of claims 1 to 5, a mounting substrate having a terminal on a surface and electrically connected to the piezoelectric device via the terminal, at least the piezoelectric device and the An electronic component having a resin portion disposed between the mounting substrate and the mounting board.
PCT/JP2015/071782 2014-09-09 2015-07-31 Piezoelectric device, piezoelectric device manufacturing method, and electronic component WO2016039038A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-182956 2014-09-09
JP2014182956A JP2016058857A (en) 2014-09-09 2014-09-09 Piezoelectric device, piezoelectric device manufacturing method, and electronic component

Publications (1)

Publication Number Publication Date
WO2016039038A1 true WO2016039038A1 (en) 2016-03-17

Family

ID=55458797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/071782 WO2016039038A1 (en) 2014-09-09 2015-07-31 Piezoelectric device, piezoelectric device manufacturing method, and electronic component

Country Status (2)

Country Link
JP (1) JP2016058857A (en)
WO (1) WO2016039038A1 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1093383A (en) * 1996-05-15 1998-04-10 Matsushita Electric Ind Co Ltd Surface acoustic wave device and its manufacture
JP2007142770A (en) * 2005-11-17 2007-06-07 Fujitsu Media Device Kk Elastic wave device and manufacturing method thereof
WO2010061821A1 (en) * 2008-11-28 2010-06-03 京セラ株式会社 Elastic wave device and method for manufacturing same
JP2012109925A (en) * 2010-10-29 2012-06-07 Kyocera Corp Acoustic wave apparatus and manufacturing method of the same
JP2012119928A (en) * 2010-11-30 2012-06-21 Kyocera Corp Elastic wave device and method of manufacturing the same
JP2012209817A (en) * 2011-03-30 2012-10-25 Kyocera Corp Elastic wave device and manufacturing method of the same
WO2012144370A1 (en) * 2011-04-19 2012-10-26 京セラ株式会社 Electronic component and acoustic wave device
WO2013027760A1 (en) * 2011-08-22 2013-02-28 京セラ株式会社 Acoustic wave device and electronic component
JP2013090228A (en) * 2011-10-20 2013-05-13 Kyocera Corp Elastic wave device, electronic component, and manufacturing method of elastic wave device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1093383A (en) * 1996-05-15 1998-04-10 Matsushita Electric Ind Co Ltd Surface acoustic wave device and its manufacture
JP2007142770A (en) * 2005-11-17 2007-06-07 Fujitsu Media Device Kk Elastic wave device and manufacturing method thereof
WO2010061821A1 (en) * 2008-11-28 2010-06-03 京セラ株式会社 Elastic wave device and method for manufacturing same
JP2012109925A (en) * 2010-10-29 2012-06-07 Kyocera Corp Acoustic wave apparatus and manufacturing method of the same
JP2012119928A (en) * 2010-11-30 2012-06-21 Kyocera Corp Elastic wave device and method of manufacturing the same
JP2012209817A (en) * 2011-03-30 2012-10-25 Kyocera Corp Elastic wave device and manufacturing method of the same
WO2012144370A1 (en) * 2011-04-19 2012-10-26 京セラ株式会社 Electronic component and acoustic wave device
WO2013027760A1 (en) * 2011-08-22 2013-02-28 京セラ株式会社 Acoustic wave device and electronic component
JP2013090228A (en) * 2011-10-20 2013-05-13 Kyocera Corp Elastic wave device, electronic component, and manufacturing method of elastic wave device

Also Published As

Publication number Publication date
JP2016058857A (en) 2016-04-21

Similar Documents

Publication Publication Date Title
US7969072B2 (en) Electronic device and manufacturing method thereof
US9271400B2 (en) Electronic component and manufacturing method therefor
JP5026574B2 (en) Piezoelectric device
US11165390B2 (en) Piezoelectric resonator device
JPWO2006001125A1 (en) Piezoelectric device
US11152911B2 (en) Piezoelectric resonator device
CN107534427A (en) Piezodectric vibration device
JP2012069582A (en) Electronic component package sealing member and electronic component package
JP6252209B2 (en) Piezoelectric vibrating piece and piezoelectric device using the piezoelectric vibrating piece
JP2012182567A (en) Piezoelectric device
JP5853702B2 (en) Piezoelectric vibration device
JP5251224B2 (en) Method for manufacturing piezoelectric vibration device and piezoelectric vibration device
KR102163886B1 (en) Elastic wave device
US20140252919A1 (en) Piezoelectric device
JP5101201B2 (en) Piezoelectric oscillator
JP5689702B2 (en) Piezoelectric device
JP5210369B2 (en) Piezoelectric device
JP6696378B2 (en) Piezoelectric vibration device
JP2016039516A (en) Piezoelectric device
JP2009278422A (en) Surface acoustic-wave device and its manufacturing method
JP5171148B2 (en) Piezoelectric oscillator
US20140265735A1 (en) Piezoelectric vibrating piece and piezoelectric device
WO2016039038A1 (en) Piezoelectric device, piezoelectric device manufacturing method, and electronic component
JP2009207068A (en) Piezoelectric device
JP6311344B2 (en) Piezoelectric vibration device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15839806

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15839806

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载