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WO2016037466A1 - Dispositif à diode électroluminescente et son procédé de fabrication - Google Patents

Dispositif à diode électroluminescente et son procédé de fabrication Download PDF

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Publication number
WO2016037466A1
WO2016037466A1 PCT/CN2015/073460 CN2015073460W WO2016037466A1 WO 2016037466 A1 WO2016037466 A1 WO 2016037466A1 CN 2015073460 W CN2015073460 W CN 2015073460W WO 2016037466 A1 WO2016037466 A1 WO 2016037466A1
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WO
WIPO (PCT)
Prior art keywords
electrodes
electrode
led chip
light emitting
emitting diode
Prior art date
Application number
PCT/CN2015/073460
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English (en)
Chinese (zh)
Inventor
黄苡叡
卓佳利
林科闯
林素慧
徐宸科
Original Assignee
厦门市三安光电科技有限公司
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Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Publication of WO2016037466A1 publication Critical patent/WO2016037466A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms

Definitions

  • the invention relates to the field of semiconductor illumination, in particular to a white light emitting diode device and a manufacturing method thereof.
  • LED Light Emitting Diode
  • LED is a semiconductor light emitting device fabricated by the principle of semiconductor P-N junction electroluminescence. LED has the advantages of environmental protection, high brightness, low power consumption, long life, low operating voltage, easy integration, etc. It is the fourth generation of new light source after incandescent lamp, fluorescent lamp and high intensity discharge (HID).
  • a conventional white light emitting diode device 100 comprising a flip-chip LED chip 110 and a package body 120 covering an upper surface and a sidewall of a flip-chip LED chip 110.
  • the first electrode 112 and the second electrode 114 of the LED chip are exposed.
  • the white light emitting diode device is generally mounted on a circuit board for use, but the solder is required to be soldered by a large reflow soldering device for installation, and the process is complicated and the cost is high.
  • the present invention provides an LED device and a method of fabricating the same, which can be directly mounted on a circuit board by heating, without the need to add solder for reflow soldering.
  • a light emitting diode device includes: an LED chip having opposite upper and lower surfaces and side walls connecting the upper and lower surfaces, wherein the first surface and the first electrode are provided on the lower surface An electrode having a gap between the first electrode and the second electrode to achieve electrical isolation between the two electrodes; a layer of encapsulating material covering the upper surface of the LED chip for protecting and supporting the LED chip; An insulating layer filling the gap and extending to the first electrode and the second electrode to cover a portion of the surface close to the gap, the thickness of which is greater than the thickness of the first and second electrodes; and the solder electrode layer covering the The first and second electrodes of the LED chip are flush with the insulating layer, and when the LED device is mounted on the circuit board, the solder electrode layer is connected.
  • the gap between the first and second electrodes of the LED chip is 100 ⁇ m to 200 ⁇ m.
  • the first and second electrodes of the LED chip respectively have two ends, wherein the first end of the LED chip contacts the lower surface, and the second end contacts the solder electrode layer, the first The second end of the electrode The second ends of the two electrodes are flush.
  • the projection of the first and second electrodes and the insulating layer on the LED chip occupies the lower surface of the entire chip.
  • the insulating layer has a width of 300 ⁇ m to 400 ⁇ m.
  • the insulating layer covers the first and second electrodes of the LED chip, and the area of the first and second electrodes is 10% to 60% of the surface of the first and second electrodes.
  • the insulating layer is a solder resist material.
  • the thickness of the encapsulating material layer is from 250 ⁇ m to 2000 ⁇ m.
  • the solder electrode layer and the insulating layer form a flattened surface that completely covers the lower surface of the LED chip.
  • the encapsulating material layer further covers the sidewall of the LED chip, and extends toward the outer periphery of the chip to expose a portion of the bottom surface, the bottom surface and the first and second electrodes of the LED chip.
  • One side of the surface of the far lower surface is flush.
  • the solder electrode layer also covers the exposed bottom surface of the encapsulating material layer.
  • the LED device further includes an insulating reflective layer covering the bottom surface of the encapsulation material layer and a portion of the first and second electrodes of the LED chip.
  • a method of fabricating a light emitting diode device includes the steps of: providing an LED chip having opposing upper and lower surfaces and sidewalls connecting the upper and lower surfaces, wherein the lower surface is provided a first electrode and a first electrode, a gap between the first electrode and the second electrode, to achieve electrical isolation between the two electrodes; the LED chip is arranged on a temporary carrier, the LED chip a surface facing upward; forming a layer of encapsulation material on the first surface of the LED chip for protecting and supporting the LED chip; removing the temporary carrier and flipping the device such that the LED chip is first a second electrode is facing upward; an insulating layer is formed on the second surface of the LED chip by a screen printing method, filling a gap between the first and second electrodes, and toward the first electrode, The second electrode extends over a portion of the surface adjacent to the gap, the thickness of which is greater than the thickness of the first and second electrodes; and a solder electrode layer is formed on the first and second electrode
  • an insulating reflective layer is formed to cover the bottom surface of the encapsulating material layer and a portion of the first and second electrodes of the LED chip.
  • the temporary carrier is an adhesive film.
  • a method of fabricating a light emitting diode device includes the steps of: providing an LED epitaxial wafer having a growth substrate and a light emitting epitaxial stack formed over the growth substrate, Growing a surface on one side of the substrate is a first surface, and a surface on a side away from the growth substrate is a second surface; a light-emitting epitaxial stack of the epitaxial wafer is unitized, and first and second electrodes are formed on the second surface to form a series of LED chip units having a gap between the first and second electrodes; providing a temporary carrier for bonding the processed LED epitaxial wafer to the temporary carrier, the first surface facing upward; Removing a growth substrate of the LED epitaxial wafer; coating a layer of encapsulation material on the first surface of the LED epitaxial wafer; removing the temporary carrier, and flipping the LED epitaxial wafer such that the first and second electrodes Upward; forming an insulating layer on the second surface of
  • the formed insulating layer covers the first and second electrodes to occupy 10% to 60% of the total surface of the first and second electrodes.
  • a method of fabricating a light emitting diode device includes the steps of: providing an LED epitaxial wafer having a growth substrate and a light emitting epitaxial stack formed over the growth substrate, a surface of one side of the growth substrate is a first surface, and a side surface away from the growth substrate is a second surface; a layer of encapsulation material is formed on the second surface of the epitaxial wafer of the LED; and the growth substrate is removed
  • the illuminating epitaxial stack of the epitaxial wafer is unitized, and the first and second electrodes are formed on the first surface to form a series of LED chip units, wherein the first and second electrodes have a gap therebetween; Forming an insulating layer on the first surface of the LED epitaxial wafer, filling a gap between the first and second electrodes, and extending to the first electrode and the second electrode to cover a portion of the surface close to the gap a thickness greater than a thickness of the first and second electrodes;
  • a mounting structure of a light emitting diode device having any one of the foregoing light emitting diode devices and a circuit board, the light emitting diode device being connected to the electrode plate by the solder electrode layer.
  • a method of mounting an LED device comprising the steps of: providing a circuit board; discharging any one of the foregoing LED devices on the circuit board, wherein the solder electrode layer and the circuit board Contacting, heating the circuit board, melting and solidifying the solder electrode layer to connect the circuit board.
  • the heating temperature and the heating time are preset, and when the circuit board is heated, the temperature is raised to the preset temperature for heating, and after the preset time is reached, the heating is turned off.
  • the solder electrode layer is formed by adding an insulating layer between the first electrode and the second electrode of the LED chip, so that the LED device can be directly pressed on the heated circuit board without using solder paste. Use huge reflow soldering equipment. Further, the high-reflection insulating layer is coated around the chip electrode and the bottom of the encapsulating material layer, and the mechanical strength between the reinforcing chip and the encapsulating material layer is increased, and the brightness reflection effect and the adhesion rate of the solder electrode layer are increased.
  • 1 is a side cross-sectional view of a conventional white light emitting diode device.
  • Embodiment 1 of the present invention is a perspective view of Embodiment 1 of the present invention.
  • Figure 3 is a cross-sectional view showing Embodiment 1 of the present invention.
  • Figure 4 is a cross-sectional view taken along line A-A of Figure 3.
  • Figure 5 is a bottom plan view of the light emitting diode device of Figure 2.
  • FIG. 6 is a schematic view showing the mounting of the LED device shown in FIG. 2.
  • FIG. 6 is a schematic view showing the mounting of the LED device shown in FIG. 2.
  • FIG. 7 is a schematic view showing the mounting structure of the LED device shown in FIG. 2.
  • FIG. 7 is a schematic view showing the mounting structure of the LED device shown in FIG. 2.
  • Figure 8 is a cross-sectional view showing a second embodiment of the present invention.
  • 15 to 18 show another manufacturing method of the LED device shown in Fig. 8.
  • Figure 19 is a cross-sectional view showing a third embodiment of the present invention.
  • an LED device 200 includes an LED chip 210, a package material layer 220, and a solder electrode layer 240, wherein an encapsulation material layer 220 covers an upper surface and a sidewall of the LED chip 210, and a solder electrode layer 240 covers the chip.
  • the lower surface 210b of the LED chip 210 has a first electrode 212 and a second electrode 214 with a gap therebetween, and the width D1 of the gap may be 100 ⁇ m to 200 ⁇ m, which is 150 ⁇ m in this embodiment.
  • the insulating layer 230 fills the gap and extends toward the first electrode 212 and the second electrode 214 to cover a portion of the surface close to the gap, and has a thickness greater than the thickness of the first and second electrodes.
  • the insulating layer 230 may be provided with a solder resist layer having a width D2 of 250 to 600 ⁇ m. Referring to FIG. 4, the projection of the first and second electrodes and the insulating layer 230 on the LED chip occupies the lower surface of the entire chip.
  • the encapsulating material layer 220 covers the upper surface 210a and the sidewall 210c of the LED chip 210 and extends toward the periphery of the chip to expose a portion of the bottom surface 222.
  • the bottom surface 222 is separated from the first and second electrodes of the LED chip from the far lower surface. The surface is flush.
  • the material of the encapsulating material layer 220 may be silica gel, and the phosphor may be directly added to obtain white light. In order to increase the light extraction efficiency, the thickness of the encapsulating material layer 220 may be increased, and in the present embodiment, it may be 250 to 2000 ⁇ m.
  • the solder electrode layer 240 directly covers the surface of the first electrode and the second electrode of the LED chip 210 and the exposed bottom surface 222 of the encapsulating material layer, and the material may be solder paste.
  • the solder electrode layer 240 and the insulating layer 230 constitute a flattened surface. Referring to FIG. 5, the solder electrode layer 240 and the insulating layer completely cover the lower surface of the LED device 200.
  • a solder electrode layer is formed, so that the subsequent LED device can be directly pressed on the heated circuit board without applying solder paste.
  • the bulk reflow soldering apparatus can be omitted, and the mounting method and mounting structure will be described below with reference to FIGS. 6-7.
  • a circuit board 260 is provided having at least a substrate 261 and a circuit layer 262.
  • the LED device 200 is discharged onto the circuit board, and the circuit board 260 is heated to bond and press down the LED device 200 to form a solder electrode layer.
  • 240 is cured to connect the circuit board.
  • the heating temperature and the heating time are preset, and the temperature is raised to the preset temperature for heating at a time, and the heating is turned off after the preset time is reached. Its installation structure is shown in Figure 7.
  • Figure 8 shows a second preferred embodiment of the present invention.
  • the difference between this embodiment and Embodiment 1 is mainly in the first and second electrodes of the LED chip.
  • the bottom surface 322 of the portion of the lower surface and the encapsulating material layer is coated with an insulating reflective layer, preferably a highly reflective white lacquer, which simultaneously serves as a solder resist.
  • the method for fabricating the LED device will be described in detail below with reference to FIGS. 9 to 14.
  • an LED chip 310 is provided having opposite upper and lower surfaces and side walls connecting the upper and lower surfaces, wherein the lower surface is provided with a first electrode and a first space separated by a gap.
  • the LED chip 310 is arranged on a temporary carrier 360, and the first surface of the LED chip 310 faces upward, wherein the temporary carrier 350 can adopt an adhesive film.
  • a series of chips 310 can generally be arranged in the temporary carrier 350. In Figures 9-14, only two LED chips are shown for simplicity of the drawing.
  • a layer of silica gel is coated on the first surface of the LED chip as a layer 320 of encapsulating material, and a phosphor can be incorporated into the silica gel.
  • the temporary carrier 360 is removed, at which point the second surface of the LED chip and a portion of the bottom surface of the encapsulating material layer 320 are exposed, and the entire sample is flipped so that the electrodes 312, 314 of the LED chip face upward.
  • an insulating layer 330 is formed on the second surface of the LED chip by using a screen printing method.
  • the insulating layer 330 fills a gap between the first and second electrodes and extends toward the first electrode and the second electrode. Covering portions of the surfaces 312a and 314a adjacent to the gap, the thickness is greater than the thickness of the first and second electrodes.
  • the surface of the bottom surface 322 of the encapsulating material layer 320 and the first and second electrode portions 312b, 314b and the insulating layer 330 of the LED chip are covered with a high-reflection paint as a screen printing method.
  • the insulating reflective layer 350, the partial surfaces 312c, 314c that reserve the first electrode and the second electrode are exposed for electrical connection.
  • a solder electrode layer 340 is formed on the surfaces 312c and 314c reserved for the first and second electrodes of the LED chip by screen printing, and the solder electrode layer 330 simultaneously covers the bottom surface 322 of the encapsulating material layer 320. So far, the surface of the entire sample away from the light-emitting surface is a flat surface.
  • the sample is cut to form a series of LED devices.
  • the solder electrode layer 340 is directly used for connection.
  • the high-reflection paint is coated around the chip electrode and the bottom of the encapsulating material layer to strengthen the mechanical strength between the chip and the encapsulating material layer, and at the same time increase the brightness reflection effect and the solder electrode layer to adhere the yield.
  • an LED epitaxial wafer 400 is provided.
  • the LED epitaxial wafer 400 has a growth substrate 401 and a light-emitting epitaxial layer 402 formed on the growth substrate, wherein the growth substrate side surface 400a is a first surface.
  • Far One side surface 400b from the growth substrate is a second surface.
  • the light-emitting epitaxial stack 402 of the LED epitaxial wafer 400 is unitized, and the first and second electrodes are formed on the second surface 400b to form a series of LED chip units 410, wherein the first and second electrodes There is a gap between them.
  • a temporary carrier 460 is provided.
  • the previously processed LED epitaxial wafer is bonded to the temporary carrier 460 with the first surface 400a facing upward, and the growth substrate 401 of the LED epitaxial wafer is removed to expose the luminescent epitaxial stack.
  • the surface of 402 is coated with a layer of silicone as the encapsulating material layer 420.
  • the temporary carrier 460 is removed, and the LED epitaxial wafer is flipped so that the first and second electrodes face upward, and the insulating layer, the insulating reflective layer and the solder electrode layer are subsequently formed in the manner shown in FIGS. 12-14. And cutting to form a series of LED devices.
  • Fig. 19 shows a third preferred embodiment of the present invention.
  • the encapsulating material layer 520 covers only the upper surface of the LED chip 520.
  • the present embodiment will be described in detail below with reference to FIGS. 20 to 24 and a manufacturing method.
  • an LED epitaxial wafer having a growth substrate 501 and a light-emitting epitaxial laminate 502 formed on the growth substrate, wherein the growth substrate side surface 500a is a first surface, away from One side surface 500b of the growth substrate is a second surface.
  • a layer of encapsulating material 520 is formed on the second surface 500b of the LED epitaxial wafer.
  • the growth substrate 501 is removed, the epitaxial wafer 502 of the epitaxial wafer is unitized, and the first and second electrodes are formed on the first surface 500a to form a series of LED chip units, first and second. There is a gap between the electrodes.
  • an insulating layer 530 is formed on the first surface 500a of the LED epitaxial wafer by using a screen printing method, which fills a gap between the first and second electrodes, and is directed to the first electrode and the second electrode.
  • the electrode extends over a portion of the surface adjacent the gap, the thickness being greater than the thickness of the first and second electrodes.
  • a solder electrode layer 540 is formed on the first and second electrodes of the LED chip unit by screen printing, which forms a flat surface with the insulating layer 530.
  • the cutting is performed to form a series of LED devices 500.
  • the LED device 500 is mounted in the circuit board, the solder electrode layer 540 can be directly used for connection.
  • the wafer level is used for fabrication, which simplifies the process and effectively reduces the size of the device.

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Abstract

L'invention concerne un dispositif à diode électroluminescente (DEL) et son procédé de fabrication. Le dispositif à diode électroluminescente (200) comporte : une puce DEL (210), qui présente une surface supérieure (210a) et une surface inférieure (210b) opposées l'une à l'autre et une paroi latérale (210c) qui relie les surfaces supérieure et inférieure, la surface inférieure étant pourvue d'une première électrode (212) et d'une seconde électrode (214), un espace étant ménagé entre la première électrode et la seconde électrode pour assurer l'isolation électrique entre celles-ci; une couche de matériau d'encapsulation (220), qui recouvre la surface supérieure de la puce DEL et qui est utilisée pour protéger et porter la puce DEL; une couche isolante (230), qui remplit l'espace et s'étend jusqu'à la première électrode et la seconde électrode afin de couvrir une partie de leur surface proche de l'espace, et qui est plus épaisse que les première et seconde électrodes; une couche d'électrode de soudure (240), qui recouvre les première et seconde électrodes de la puce DEL et par laquelle une connexion est effectuée lorsque le dispositif à diode électroluminescente est monté sur une carte de circuit imprimé. Le dispositif à diode électroluminescente peut être directement monté sur une carte de circuit imprimé par chauffage pour être utilisé, sans adopter de dispositif de soudage par refusion.
PCT/CN2015/073460 2014-09-09 2015-03-02 Dispositif à diode électroluminescente et son procédé de fabrication WO2016037466A1 (fr)

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CN201410454696.5 2014-09-09
CN201410454696.5A CN104183686B (zh) 2014-09-09 2014-09-09 发光二极管器件及其制作方法

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WO2016037466A1 true WO2016037466A1 (fr) 2016-03-17

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CN105047804A (zh) * 2015-06-01 2015-11-11 聚灿光电科技股份有限公司 免封装led芯片及其制备方法
CN208014747U (zh) * 2018-01-19 2018-10-26 昆山国显光电有限公司 封装结构
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CN109952641B (zh) * 2019-01-15 2023-01-10 泉州三安半导体科技有限公司 发光二极管封装器件及发光装置
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CN203746898U (zh) * 2014-01-26 2014-07-30 上海瑞丰光电子有限公司 一种led封装体及照明装置
CN104183686A (zh) * 2014-09-09 2014-12-03 厦门市三安光电科技有限公司 发光二极管器件及其制作方法

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