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WO2016060541A1 - Overvoltage protection - Google Patents

Overvoltage protection Download PDF

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Publication number
WO2016060541A1
WO2016060541A1 PCT/MY2015/000003 MY2015000003W WO2016060541A1 WO 2016060541 A1 WO2016060541 A1 WO 2016060541A1 MY 2015000003 W MY2015000003 W MY 2015000003W WO 2016060541 A1 WO2016060541 A1 WO 2016060541A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
overvoltage protection
protection circuitry
gate
voltage
Prior art date
Application number
PCT/MY2015/000003
Other languages
French (fr)
Inventor
Ching Hau TAN
Original Assignee
O.Y.L. Technology Sdn Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by O.Y.L. Technology Sdn Bhd filed Critical O.Y.L. Technology Sdn Bhd
Publication of WO2016060541A1 publication Critical patent/WO2016060541A1/en

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Definitions

  • the present invention relates to an overvoltage protection circuitry for preventing an over voltage from flowing into a system and a method thereof.
  • An electrical appliance such as air conditioner is designed to run at a specified voltage.
  • the voltage that the electrical utility delivers to our house is usually constant. However it can vary under certain unusual conditions. Overvoltage condition can cause overheating and damage to the electronic components.
  • US8427802B2 discloses an overvoltage (OV) protection with active components which require power source to perform overvoltage protection function.
  • OV overvoltage
  • power supply may fail easily resulting immediate failure in protection function. It appears that the OV decision circuit is not designed to work under OV condition.
  • OV protection triggers its own power supply, the entire OV function will completely fail.
  • US2014/0153140 Al and US7932632B2 also disclose an OV protection with active components which required require power source to perform OV protection function.
  • power supply may fail easily resulting immediate failure in protection function.
  • OV protection triggers its own power supply, the entire OV function will completely fail.
  • MCU microprocessor unit
  • Its program may go through interrupts which involves data manipulation, action and decision. This requires many processing cycle time and may result in a slow protection response time. Further, the MCU design is vulnerable to high electrical noise environment.
  • the use of passive components in the circuitry provides a fast response time which can react faster than circuitry with MCU or integrated circuit (IC) based design.
  • the circuitry is able to operate independently without additional power supply or supervision from external active components.
  • the circuitry is also able to operate under regulator mode and therefore enables device such as an air conditioner to operate under extreme incoming voltage.
  • a circuitry for protecting a switching mode power supply (SMPS) DC BUS of an electrical appliance, an electrolytic capacitor and the surrounding sensitive electronic switches included in the circuitry from a voltage surge.
  • SMPS switching mode power supply
  • the overvoltage protection circuitry comprises:
  • a field-effect transistor to function as a switch for controlling electric current and regulating voltage from a power input supply
  • a zener diode having its cathode connected to a gate terminal of the transistor
  • a resistor connected across the gate terminal and drain terminal of the transistor for resisting current flowing to the gate terminal that will gradually turn on the transistor when a sudden input voltage is higher than a threshold voltage of the zener diode;
  • the transistor will continue to conduct current across the drain terminal to a source terminal until a source voltage of the transistor is higher or equal to a sum value of a gate voltage deducted by a threshold value of the transistor.
  • a soft-start circuit is deployed.
  • An electrolytic capacitor is added across the transistor's gate and source to form a gate charging circuit.
  • This circuit allows a switching mode power supply DC Bus to be slowly charged up via output connecting points.
  • a gate charging effect will cause the transistor to become a variable resistor where its resistance to drop from Mega Ohm to several Ohm limiting the current flowing through it. (i.e. connecting point 103 to 107 as shown in Fig.1)
  • a second zener diode is placed across the electrolytic capacitor for preventing the transistor's gate from damage by an overvoltage.
  • a first electromagnetic interference (EMI) filter is placed across the power input supply and a second EMI filter is place across the second zener diode for minimizing fault triggering on the transistor. This allows the circuitry to be substantially non-reactive to electromagnetic interference and provides a self- recovery from error or fault.
  • EMI electromagnetic interference
  • Fig. 1 shows a circuit diagram of an overvoltage protection module according to an embodiment of the present invention. Detailed Description of the Invention
  • Fig. 1 shows an exemplary circuit diagram of an overvoltage protection (OVP) module.
  • the OVP circuit is connected to a power input supply via a first connecting point (101) and a second connecting point (102).
  • the first connecting point is connected to a positive terminal and the second connecting point is connected to a negative terminal of the power input supply.
  • a first electromagnetic interference (EMI) filter (C02) is placed across the power input supply connecting the first and second connecting points (101,102) for minimizing fault triggering on a transistor.
  • the OVP circuit comprises a resistor (R02), a field-effect transistor (FET) (Q01) and a zener diode (TVS1).
  • R02 resistor
  • FET field-effect transistor
  • TVS1 zener diode
  • the interconnection between these components may provide a fast response voltage regulator model where voltage can be regulated by changing the zener diode voltage.
  • the zener diode and transistor are able to react much faster than any microcontroller unit (MCU)/integrated circuit (IC) design.
  • the OVP circuit further comprises power output connecting points (201, 202) which form a direct current (DC) output voltage bus.
  • the output voltage will never be higher than the breakdown voltage of the zener diode.
  • the breakdown voltage of a diode is the minimum reverse voltage to make the diode conduct in reverse.
  • the resistor (R02) is placed across the drain terminal and gate terminal of to the transistor wherein the first leg of the resistor (R02) is connected to a third connecting point (103) which is in connection to the first input point (101) and a drain terminal of the transistor (QOl) and the second leg of the resistor (R02) is connected a fourth connecting point (104) which is in connection with a gate terminal of the transistor (QOl) at the fifth connecting point (105).
  • the resistor (R02) provides a resistance to the flow of the electric current in which it will switch the transistor on (QOl) gradually when the input voltage is higher that the threshold voltage of the transistor.
  • the value of the resistor (R02) will be affecting the soft- start time and controls current flow through connecting point 103 to 107. However, the threshold voltage is not affected by the value of the resistor.
  • the value of the resistor R02 is specially chosen so that the transistor QOl operates in safe operating region (SO A).
  • the transistor (QOl) acts as a switch for controlling the main current and regulating the voltage in the circuit.
  • the transistor includes but is not limited to MOSFET, BJT or IGBT.
  • a N-channel FET is used in the circuit in which the transistor (QOl) is turned off on a threshold voltage.
  • the threshold voltage is the minimum gate-to-source voltage that is needed to create a conducting path between the source and drain terminals.
  • Vth TVS TVS voltage on threshold
  • potential or gate voltage at the connecting point (105) Vg will be clamped to Vth TVS
  • an output voltage is regulated to 440V from an overvoltage higher than 450V at the input.
  • the zener diode (TVSl) having its cathode connected to the fifth connecting point (105) and its anode to a sixth connecting point (106) which is in connection to and electrically common to the second input connecting point (102) and the second output connecting point (109).
  • a soft-start effect is deployed on the OVP circuit to allow the switching mode power supply DC Bus to be slowly charged up via output connecting points (201,202).
  • An electrolytic capacitor (E01) is added across the gate terminal and source terminal of the transistor (Q01) in which together with the resistor (R02) forming a gate charging circuit (E01 and R02).
  • the electrolytic capacitor (E01) draws an amount of current limited by the resistor (R02). When the DC bus voltage reaches a normal condition, the transistor will be shutdown.
  • a second zener diode (ZN01) is added across the electrolytic capacitor (E01) for preventing overvoltage from damaging the gate of the transistor (Q01).
  • the transistor (Q01) is able to operate at a higher voltage, for example at a voltage above 800V, it is still subject to electrical stress. It is therefore a protection by employing the second zener diode is preferable.
  • the electrolytic capacitor having its negative terminal connected to a seventh connecting point (7) which is in connection to the source terminal of the transistor (Q01) and to an eighth connecting point (108) which in connection to the anode of the second zener diode (ZN01).
  • the cathode of the second zener diode (ZN01) is connected to a ninth connecting point (109) which is in connection to a tenth connecting point (1 10) in which the positive terminal of the electrolytic capacitor (E01) is connected to.
  • the tenth connecting point is connected to the fifth connecting point (105).
  • a second electromagnetic interference (EMI) filter (C01) is added across the second zener diode (ZN01) for minimizing fault triggering on the transistor (Q01).
  • the second EMI filter has a terminal connected to an eleventh connecting point (1 11) which is in connection to the eighth connecting point (108) and the other terminal connected to a twelfth connecting point (12) which is in connection to the ninth connecting point (109).
  • the eleventh (1 1 1) and twelfth (1 12) connecting points are connected to the power output or the DC BUS via a first (201) and second (202) output connecting points respectively.
  • the gate charging resistor-capacitor network effect added in voltage waveform will cause the transistor (QOl) to become a variable resistor, where its resistance may drop from few Mega Ohm to several Ohm to limit the current flowing through the connecting point 103 to 107 that automatically protects the transistor from an inrush current.

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  • Engineering & Computer Science (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)

Abstract

The present invention provides an overvoltage protection circuitry for a switching mode power supply (SMPS) DC BUS of an electrical appliance which comprises a field-effect transistor (Q01) to function as a switch for controlling electric current and regulating voltage from a power input supply, a zener diode (TVS1), a resistor (R02) for resisting current into the transistor that will gradually turn on the transistor when a sudden input voltage is higher than a threshold voltage of the zener diode, wherein the transistor will conduct current across the drain to the source of the transistor. An electrolytic capacitor (E01) is added across the transistor's gate and source to form a gate charging circuit to allow the switching mode power supply DC Bus to be slowly charged up.

Description

OVERVOLTAGE PROTECTION
Field of the Invention
The present invention relates to an overvoltage protection circuitry for preventing an over voltage from flowing into a system and a method thereof.
Background of the Invention
An electrical appliance such as air conditioner is designed to run at a specified voltage. The voltage that the electrical utility delivers to our house is usually constant. However it can vary under certain unusual conditions. Overvoltage condition can cause overheating and damage to the electronic components.
US8427802B2 discloses an overvoltage (OV) protection with active components which require power source to perform overvoltage protection function. In the overvoltage event, power supply may fail easily resulting immediate failure in protection function. It appears that the OV decision circuit is not designed to work under OV condition. When OV protection triggers its own power supply, the entire OV function will completely fail.
US2014/0153140 Al and US7932632B2 also disclose an OV protection with active components which required require power source to perform OV protection function. In the OV event, power supply may fail easily resulting immediate failure in protection function. When OV protection triggers its own power supply, the entire OV function will completely fail. The use of microprocessor unit (MCU) may not achieve ideal real time response. Its program may go through interrupts which involves data manipulation, action and decision. This requires many processing cycle time and may result in a slow protection response time. Further, the MCU design is vulnerable to high electrical noise environment.
It is an object of the present invention to provide a circuitry for preventing an overvoltage from flowing into a system of an electrical appliance and thereby protecting the system in which the circuitry does not require active components to provide overvoltage protection. The use of passive components in the circuitry provides a fast response time which can react faster than circuitry with MCU or integrated circuit (IC) based design. The circuitry is able to operate independently without additional power supply or supervision from external active components. The circuitry is also able to operate under regulator mode and therefore enables device such as an air conditioner to operate under extreme incoming voltage.
Summary of the invention
According to the present invention, a circuitry is provided for protecting a switching mode power supply (SMPS) DC BUS of an electrical appliance, an electrolytic capacitor and the surrounding sensitive electronic switches included in the circuitry from a voltage surge.
The overvoltage protection circuitry comprises:
a field-effect transistor to function as a switch for controlling electric current and regulating voltage from a power input supply;
a zener diode having its cathode connected to a gate terminal of the transistor;
a resistor connected across the gate terminal and drain terminal of the transistor for resisting current flowing to the gate terminal that will gradually turn on the transistor when a sudden input voltage is higher than a threshold voltage of the zener diode;
wherein the transistor will continue to conduct current across the drain terminal to a source terminal until a source voltage of the transistor is higher or equal to a sum value of a gate voltage deducted by a threshold value of the transistor.
As an inrush current may damage the field-effect transistor, a soft-start circuit is deployed. An electrolytic capacitor is added across the transistor's gate and source to form a gate charging circuit. This circuit allows a switching mode power supply DC Bus to be slowly charged up via output connecting points. A gate charging effect will cause the transistor to become a variable resistor where its resistance to drop from Mega Ohm to several Ohm limiting the current flowing through it. (i.e. connecting point 103 to 107 as shown in Fig.1) A second zener diode is placed across the electrolytic capacitor for preventing the transistor's gate from damage by an overvoltage.
A first electromagnetic interference (EMI) filter is placed across the power input supply and a second EMI filter is place across the second zener diode for minimizing fault triggering on the transistor. This allows the circuitry to be substantially non-reactive to electromagnetic interference and provides a self- recovery from error or fault.
Brief Description of the Drawing
An embodiment will now be described, by way of example, with reference to the accompanying drawing, in which:
Fig. 1 shows a circuit diagram of an overvoltage protection module according to an embodiment of the present invention. Detailed Description of the Invention
Fig. 1 shows an exemplary circuit diagram of an overvoltage protection (OVP) module. The OVP circuit is connected to a power input supply via a first connecting point (101) and a second connecting point (102). The first connecting point is connected to a positive terminal and the second connecting point is connected to a negative terminal of the power input supply. A first electromagnetic interference (EMI) filter (C02) is placed across the power input supply connecting the first and second connecting points (101,102) for minimizing fault triggering on a transistor. According to the present invention, the OVP circuit comprises a resistor (R02), a field-effect transistor (FET) (Q01) and a zener diode (TVS1). The interconnection between these components may provide a fast response voltage regulator model where voltage can be regulated by changing the zener diode voltage. The zener diode and transistor are able to react much faster than any microcontroller unit (MCU)/integrated circuit (IC) design. The OVP circuit further comprises power output connecting points (201, 202) which form a direct current (DC) output voltage bus. The output voltage will never be higher than the breakdown voltage of the zener diode. The breakdown voltage of a diode is the minimum reverse voltage to make the diode conduct in reverse.
The resistor (R02) is placed across the drain terminal and gate terminal of to the transistor wherein the first leg of the resistor (R02) is connected to a third connecting point (103) which is in connection to the first input point (101) and a drain terminal of the transistor (QOl) and the second leg of the resistor (R02) is connected a fourth connecting point (104) which is in connection with a gate terminal of the transistor (QOl) at the fifth connecting point (105). The resistor (R02) provides a resistance to the flow of the electric current in which it will switch the transistor on (QOl) gradually when the input voltage is higher that the threshold voltage of the transistor. The value of the resistor (R02) will be affecting the soft- start time and controls current flow through connecting point 103 to 107. However, the threshold voltage is not affected by the value of the resistor. The value of the resistor R02 is specially chosen so that the transistor QOl operates in safe operating region (SO A).
The transistor (QOl) acts as a switch for controlling the main current and regulating the voltage in the circuit. The transistor includes but is not limited to MOSFET, BJT or IGBT. As shown in Fig. 1 a N-channel FET is used in the circuit in which the transistor (QOl) is turned off on a threshold voltage. The threshold voltage is the minimum gate-to-source voltage that is needed to create a conducting path between the source and drain terminals.
When a sudden input voltage is higher than a zener diode threshold voltage, Vth TVS (TVS voltage on threshold), potential or gate voltage at the connecting point (105), Vg will be clamped to Vth TVS, and the transistor (QOl) will continue to conduct current across the connecting points 103 and 107 until the connecting point (107) potential or source voltage be in the following condition Vs >= Vg - Vth mosfet (where Vth mosfet is MOSFET voltage on threshold)
For example, as shown in Fig. 1, an output voltage is regulated to 440V from an overvoltage higher than 450V at the input.
The zener diode (TVSl) having its cathode connected to the fifth connecting point (105) and its anode to a sixth connecting point (106) which is in connection to and electrically common to the second input connecting point (102) and the second output connecting point (109).
The zener diode (TVS1) is connected in such arrangement is for controlling gate voltage connecting point (105) so that source voltage connecting point (107), Vs will never higher than the following condition Vs >= Vg - Vth mosfet.
A soft-start effect is deployed on the OVP circuit to allow the switching mode power supply DC Bus to be slowly charged up via output connecting points (201,202). An electrolytic capacitor (E01) is added across the gate terminal and source terminal of the transistor (Q01) in which together with the resistor (R02) forming a gate charging circuit (E01 and R02). The electrolytic capacitor (E01) draws an amount of current limited by the resistor (R02). When the DC bus voltage reaches a normal condition, the transistor will be shutdown.
A second zener diode (ZN01) is added across the electrolytic capacitor (E01) for preventing overvoltage from damaging the gate of the transistor (Q01). Although the transistor (Q01) is able to operate at a higher voltage, for example at a voltage above 800V, it is still subject to electrical stress. It is therefore a protection by employing the second zener diode is preferable.
As shown in Fig. 1, the electrolytic capacitor having its negative terminal connected to a seventh connecting point (7) which is in connection to the source terminal of the transistor (Q01) and to an eighth connecting point (108) which in connection to the anode of the second zener diode (ZN01). The cathode of the second zener diode (ZN01) is connected to a ninth connecting point (109) which is in connection to a tenth connecting point (1 10) in which the positive terminal of the electrolytic capacitor (E01) is connected to. The tenth connecting point is connected to the fifth connecting point (105). A second electromagnetic interference (EMI) filter (C01) is added across the second zener diode (ZN01) for minimizing fault triggering on the transistor (Q01). The second EMI filter has a terminal connected to an eleventh connecting point (1 11) which is in connection to the eighth connecting point (108) and the other terminal connected to a twelfth connecting point (12) which is in connection to the ninth connecting point (109). The eleventh (1 1 1) and twelfth (1 12) connecting points are connected to the power output or the DC BUS via a first (201) and second (202) output connecting points respectively.
The gate charging resistor-capacitor network effect added in voltage waveform will cause the transistor (QOl) to become a variable resistor, where its resistance may drop from few Mega Ohm to several Ohm to limit the current flowing through the connecting point 103 to 107 that automatically protects the transistor from an inrush current.

Claims

An overvoltage protection circuitry for a switching mode power supply (SMPS) DC BUS of an electrical appliance comprising
a field-effect transistor (Q01) to function as a switch for controlling electric current and regulating voltage from a power input supply;
a zener diode (TVS1) having its cathode connected to a gate terminal of the transistor;
a resistor (R02) connected across a gate terminal and a drain terminal of the transistor for resisting current flowing to the gate terminal that will gradually turn on the transistor when a sudden input voltage is higher than a threshold voltage of the zener diode;
wherein the transistor will continue to conduct current across the drain terminal to a source terminal until a source voltage of the transistor is higher or equal to a sum value of a gate voltage deducted by a threshold value of the transistor.
An overvoltage protection circuitry as claimed in claim 1 further comprising an electrolytic capacitor (EOl) added across the transistor's gate and source to form a gate charging circuit to allow the switching mode power supply DC Bus to be slowly charged up.
An overvoltage protection circuitry as claimed in claim 2 wherein the electrolytic capacitor (EOl) draws an amount of current limited by the resistor (R02).
An overvoltage protection circuitry as claimed in claim 2 includes a second zener diode (ZN01) placed across the electrolytic capacitor for preventing the transistor's gate from damage by an overvoltage.
5. An overvoltage protection circuitry as claimed in claim 1 wherein a first EMI filter (C02) is placed across the power input supply for minimizing fault triggering on the transistor.
6. An overvoltage protection circuitry as claimed in claim 4 wherein a second EMI filter is placed across the second zener diode for minimizing fault triggering on the transistor.
7. An overvoltage protection circuitry as claimed in claim 1 wherein the transistor (Q01) is connected to the power input supply via first (101) and second connecting points (102) which are connected to positive and negative terminals of the power input supply respectively.
8. An overvoltage protection circuitry as claimed in claim 1 wherein the zener diode having its anode connected to a connecting point (106) that is common to a negative terminal of the power input supply and a power output connecting point (202).
9. An overvoltage protection circuitry as claimed in claim 6 wherein the second electromagnetic interference (EMI) filter having a terminal connected to a connecting point (1 1 1) which is common to a power output connecting point (201).
10. An overvoltage protection circuitry as claimed in claim 2 wherein a gate charging effect will cause the transistor to become a variable resistor where its resistance to drop from Mega Ohm to several Ohm limiting the current flowing through it that automatically protects the transistor from an inrush current.
1. An overvoltage protection circuitry as claimed in claim 2 wherein the switching mode power supply DC Bus is slowly charged up via output connecting points (201, 202).
PCT/MY2015/000003 2014-10-15 2015-01-12 Overvoltage protection WO2016060541A1 (en)

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MYPI2014703047A MY194845A (en) 2014-10-15 2014-10-15 Overvoltage protection
MYPI2014703047 2014-10-15

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CN108695838A (en) * 2018-05-18 2018-10-23 向玲丽 A kind of power supply or signal transmission plug-in unit
EP3514906A1 (en) * 2018-01-19 2019-07-24 Hamilton Sundstrand Corporation System for and method of controlling inrush current between a power source and a load
CN110326203A (en) * 2017-02-01 2019-10-11 世倍特集团有限责任公司 DC-DC converter
JP2019180158A (en) * 2018-03-30 2019-10-17 株式会社デンソーテン Power supply circuit and electronic device
TWI692941B (en) * 2019-05-23 2020-05-01 富創微電子有限公司 Over-voltage protection circuit for usb type-c connecter
US11018493B2 (en) * 2017-12-12 2021-05-25 Beijing Boe Optoelectronics Technology Co., Ltd. Method for driving backlight module, driving device and display apparatus
CN113726316A (en) * 2021-09-01 2021-11-30 深圳中科乐普医疗技术有限公司 MOSFET drive protection circuit and switching power supply system
US20220170437A1 (en) * 2019-04-26 2022-06-02 Autonetworks Technologies, Ltd. Control device
EP4135482A1 (en) * 2021-08-13 2023-02-15 Tridonic GmbH & Co. KG Ripple-reducing current limiter for a power supply of a lighting control bus

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US5793589A (en) * 1994-06-01 1998-08-11 Siemens Aktiengesellschaft Circuit arrangement for current limiting
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US7932632B2 (en) 2005-01-08 2011-04-26 Emerson Network Power Energy Systems Ab Switching power supply with overvoltage protection and overvoltage protection method thereof
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US8427802B2 (en) 2009-05-08 2013-04-23 Renesas Electronics Corporation Input overvoltage protection circuit with soft-start function
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US4588933A (en) * 1984-09-13 1986-05-13 Motorola, Inc. Brushless direct current motor control system with protection circuitry
US5793589A (en) * 1994-06-01 1998-08-11 Siemens Aktiengesellschaft Circuit arrangement for current limiting
US7932632B2 (en) 2005-01-08 2011-04-26 Emerson Network Power Energy Systems Ab Switching power supply with overvoltage protection and overvoltage protection method thereof
EP2051359A1 (en) * 2007-10-09 2009-04-22 Mitsubishi Electric Corporation Power supply circuit and earth leakage circuit breaker using the same
US8427802B2 (en) 2009-05-08 2013-04-23 Renesas Electronics Corporation Input overvoltage protection circuit with soft-start function
US20120112729A1 (en) * 2010-11-08 2012-05-10 Visteon Global Technologies, Inc. In-rush limiter circuit for a driver module
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