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WO2014011260A3 - High efficiency solar cell structures and manufacturing methods - Google Patents

High efficiency solar cell structures and manufacturing methods Download PDF

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Publication number
WO2014011260A3
WO2014011260A3 PCT/US2013/035029 US2013035029W WO2014011260A3 WO 2014011260 A3 WO2014011260 A3 WO 2014011260A3 US 2013035029 W US2013035029 W US 2013035029W WO 2014011260 A3 WO2014011260 A3 WO 2014011260A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
metallization layer
solar cell
conductive metallization
high efficiency
Prior art date
Application number
PCT/US2013/035029
Other languages
French (fr)
Other versions
WO2014011260A2 (en
Inventor
Karl-Josef Kramer
Mehrdad M. Moslehi
Pawan Kapur
Virendra V. Rana
David Dutton
Sean M. Seutter
Anthony Calcaterra
Jay Ashjaee
Takao Yonehara
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to AU2013289151A priority Critical patent/AU2013289151A1/en
Priority to JP2015504686A priority patent/JP2015516145A/en
Publication of WO2014011260A2 publication Critical patent/WO2014011260A2/en
Publication of WO2014011260A3 publication Critical patent/WO2014011260A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.
PCT/US2013/035029 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods WO2014011260A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2013289151A AU2013289151A1 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods
JP2015504686A JP2015516145A (en) 2012-04-02 2013-04-02 High efficiency solar cell structure and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261619300P 2012-04-02 2012-04-02
US61/619,300 2012-04-02

Publications (2)

Publication Number Publication Date
WO2014011260A2 WO2014011260A2 (en) 2014-01-16
WO2014011260A3 true WO2014011260A3 (en) 2014-04-10

Family

ID=49916638

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/035029 WO2014011260A2 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Country Status (3)

Country Link
JP (1) JP2015516145A (en)
AU (1) AU2013289151A1 (en)
WO (1) WO2014011260A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10164131B2 (en) * 2014-12-19 2018-12-25 Sunpower Corporation Multi-layer sputtered metal seed for solar cell conductive contact
FR3050870B1 (en) * 2016-04-28 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR PRODUCING AN ELECTROMAGNETIC RADIATION DETECTION DEVICE COMPRISING A LAYER OF GETTER MATERIAL
CN112466967B (en) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 A kind of selective emitter solar cell and its preparation method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090114276A1 (en) * 2007-06-18 2009-05-07 Wei Shan Methods and apparatuses for improving power extraction from solar cells
WO2009149850A2 (en) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Light, rigid, self-supporting solar module and method for the production thereof
US20100112782A1 (en) * 2007-04-17 2010-05-06 Imec Method for reducing the thickness of substrates
WO2011090169A1 (en) * 2010-01-22 2011-07-28 シャープ株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet
US20120055543A1 (en) * 2010-09-03 2012-03-08 Solopower, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313396B1 (en) * 2000-05-22 2001-11-06 The Boeing Company Lightweight solar module and method of fabrication
JP2005317779A (en) * 2004-04-28 2005-11-10 Toyota Motor Corp Photoelectric conversion element
JP2008052767A (en) * 2006-08-22 2008-03-06 Sony Corp Recording device and recording method, and program
JP5252472B2 (en) * 2007-09-28 2013-07-31 シャープ株式会社 Solar cell, method for manufacturing solar cell, method for manufacturing solar cell module, and solar cell module
EP2404317A4 (en) * 2009-03-06 2014-06-11 Solexel Inc METHOD FOR MANUFACTURING THIN FILM SUBSTRATE
JP2011054831A (en) * 2009-09-03 2011-03-17 Sharp Corp Back contact type solar cell, solar cell string, and solar cell module
WO2011150397A2 (en) * 2010-05-27 2011-12-01 Solexel, Inc. Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
KR101289789B1 (en) * 2010-08-13 2013-07-26 솔렉셀, 인크. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100112782A1 (en) * 2007-04-17 2010-05-06 Imec Method for reducing the thickness of substrates
US20090114276A1 (en) * 2007-06-18 2009-05-07 Wei Shan Methods and apparatuses for improving power extraction from solar cells
WO2009149850A2 (en) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Light, rigid, self-supporting solar module and method for the production thereof
WO2011090169A1 (en) * 2010-01-22 2011-07-28 シャープ株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet
US20120055543A1 (en) * 2010-09-03 2012-03-08 Solopower, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Also Published As

Publication number Publication date
WO2014011260A2 (en) 2014-01-16
AU2013289151A1 (en) 2014-11-13
JP2015516145A (en) 2015-06-08

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