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WO2014089355A1 - Techniques et dispositifs de commutation optique de laser à transistor et de mémoire - Google Patents

Techniques et dispositifs de commutation optique de laser à transistor et de mémoire Download PDF

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Publication number
WO2014089355A1
WO2014089355A1 PCT/US2013/073414 US2013073414W WO2014089355A1 WO 2014089355 A1 WO2014089355 A1 WO 2014089355A1 US 2013073414 W US2013073414 W US 2013073414W WO 2014089355 A1 WO2014089355 A1 WO 2014089355A1
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WO
WIPO (PCT)
Prior art keywords
base
collector
emitter
providing
layer
Prior art date
Application number
PCT/US2013/073414
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English (en)
Inventor
Milton Feng
Nick Holonyak
Mong-Kai WU
Original Assignee
The Board Of Trustees Of The University Of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by The Board Of Trustees Of The University Of Illinois filed Critical The Board Of Trustees Of The University Of Illinois
Publication of WO2014089355A1 publication Critical patent/WO2014089355A1/fr
Priority to US14/545,587 priority Critical patent/US9478942B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Definitions

  • This invention relates to semiconductor light emitting and lasing devices and techniques and, more particularly, to ring light-emitting transistors and transistor lasers, coherent field switching, and optical memory techniques and devices.
  • HBTs heterojunction bipolar transistors
  • light-emitting transistors transistor lasers
  • tilted charge light-emitting diodes LETs, TLs, and TCLEDs, all of which are optical tilted charge devices.
  • a tilted charge device gets its name from the energy diagram characteristic in the device's base region, which has, approximately, a descending ramp shape from the emitter interface to the collector (or drain, for a two terminal device) interface. This represents a tilted charge population of carriers that are in dynamic flow - "fast” carriers recombine, and "slow” carriers exit via the collector (or drain).
  • An optical tilted charge device includes an active region with built-in free majority carriers of one polarity. At one input to this active region, a single species of minority carriers of opposite polarity are injected and allowed to diffuse across the active region. This active region has features that enable and enhance the conduction of majority carriers and the radiative recombination of minority carriers. On the output side of the region, minority carriers are then collected, drained, depleted or recombined by a separate and faster mechanism. Electrical contacts are coupled to this full-featured region.
  • Tilted charge light emitters have many important applications in optoelectronics. It is among the objects hereof to devise techniques and devices for light-emitting transistors and transistor lasers that have new and improved characteristics and applications in opto-electronics.
  • a ring cavity light-emitting transistor device comprising: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with said base layer, said collector layer, and said emitter layer, said base metallization comprising at least one annular ring coupled with a surface of said base layer; and an annular ring-shaped optical resonator in a region of said semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to said base, collector, and emitter metalizations causes light emission in said base layer that propagates in said ring-shaped optical resonator cavity.
  • An embodiment of this form of the invention further comprises an electrical circuit for controlling application of said electrical signals with respect to said base, collector, and emitter metalizations to operate the device as either a light-emitting transistor or a transistor laser by controlling photon-assisted tunneling.
  • the electrical circuit can comprise an optically controlled switch.
  • a quantum size region is provided within said semiconductor base layer.
  • the quantum size region can comprise, for example, one or a plurality of quantum wells, quantum dot layers or quantum wire layers.
  • the semiconductor base layer is in the form of an annular mesa on the collector layer and the semiconductor emitter layer is in the form of an annular mesa on the base mesa, and the base and emitter metalizations are respectively deposited on the base and emitter mesas.
  • Upper and lower optically reflective optical confinement regions in the form of distributed Bragg reflectors, are provided for the ring-shaped optical resonator.
  • oxide confining rings are provided at the inner and outer sidewalls of the emitter mesa.
  • a method for optical switching including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in said base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing electrical signals with respect to said base, collector, and emitter terminals to obtain light emission from said base region; providing an optical resonant cavity that encloses at least a portion of said base region; increasing the Q of said cavity to obtain substantially vertical collector-emitter voltage behavior as a function of collector current at a given base current; and switching between coherent and incoherent light emission from said base region by controlling said collector-emitter voltage to control photon-assisted tunneling.
  • the step of increasing the Q of the cavity comprises providing said optical resonant cavity as a continuous closed loop waveguide, such as a ring cavity.
  • method for receiving an optical input signal and producing a switchable coherent optical output that depends on the optical input signal, including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in the base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing electrical signals with respect to the base, collector, and emitter terminals to obtain light emission from the base region; providing an optical resonant cavity that encloses at least a portion of the base region; increasing the Q of said cavity to obtain substantially vertical collector-emitter voltage behavior as a function of collector current at a given base current; and providing an electo- optic circuit that is responsive to said optical input signal to substantially reduce or increase the collector-emitter voltage and switch the optical emission between coherent and incoherent light.
  • the step of providing said opto-electronic circuit comprises providing a photodetector responsive to said optical input signal for coupling a reduced voltage to the collector terminal to control photon-assisted tunneling.
  • the step of increasing the Q of said cavity comprises providing said optical resonant cavity as a ring cavity.
  • a method for storing binary optical information, including the following steps: providing a ring cavity light-emitting transistor; operating said ring cavity light-emitting transistor at first and second related operating points of its hysteresis characteristic, said first operating point causing spontaneous light emission from the ring cavity light-emitting transistor, and said second operating point causing laser emission from the ring cavity light-emitting transistor; and writing binary information for storage into the ring cavity light-emitting transistor by controlling selection of said first or said second operating point.
  • the step of operating the ring cavity light- emitting transistor at first and second related operating points of its hysteresis characteristic comprises operating, for a particular base current, at a first operating point of a given collector current and a first collector-emitter voltage and a second operating point of the same given collector current and a second collector-emitter voltage.
  • the step of writing binary information comprises applying an optical pulse to an electro-optic circuit that is responsive to said optical pulse for controlling said collector-emitter voltage.
  • This embodiment also includes the step of providing an optical erase signal to a further electro-optic circuit that is responsive to said erase signal to reset the collector-emitter voltage to a particular one of said first or second operating points.
  • Figure 1 illustrates, in simplified form, a type of transistor light-emitter device and/or transistor laser device that can be utilized and modified in understanding and in practicing aspects of the invention.
  • Figure 2 shows, in its top panel (A) (at 15 °C) the collector l-V characteristics of a transistor laser (TL) of earlier work with a 6 ⁇ emitter mesa (reduced to a 4 ⁇ oxide-defined aperture) and as-cleaved mirror facets (400 ⁇ separation). The region of laser operation is indicated by the shading.
  • the bottom panel (B) is shows the behavior of the same transistor under the same conditions, except with the reflectivity of one facet increased by applying a deformable InGa metal ball at one of the cleaved ends.
  • Figure 3 shows spectra that were taken from the unaltered facet of the device of the earlier work.
  • the panels (1 ) - (5) are correlated with the bias points marked on the collector l-V curves of Figure 2B.
  • Figure 5 shows behavior of the earlier device as TL switches from stimulated to spontaneous recombination, from high coherent optical field to lower incoherent "signal" (that is, to broad spontaneous recombination radiation), lower effective field, and smaller slope of the breakdown curve.
  • FIGs of Figures 6A and 6B respectively show l-V characteristics and ⁇ as a function of base current for a 400 ⁇ edge-emitting transistor laser at -10 degrees C and at -50 degrees C, which effectively serves to decrease loss and increase optical gain, thereby effectively increasing Q.
  • Figure 7 shows, in the Figure portion A, a perspective view, and in the Figure portion B, a partial cross-sectional view, of a ring cavity light-emitting transistor and ring laser in accordance with an embodiment of the invention, and which can be used in practicing an embodiment of the method of the invention.
  • Figure 8 is a table showing the layer structure for an example of the Figure 7 embodiment.
  • FIG 9 shows the collector-emitter voltage VCE of the ring cavity light- emitting transistor/transistor laser (LET/TL) of Figure 7 as a function of collector current ic, for different values of base current, IB, at temperatures of -10 degrees C and -50 degrees C. The sharp switching characteristic is evident in the lower temperature characteristic.
  • FIG 10 shows the collector-emitter voltage VCE of the ring cavity LET/TL of Figure 7 as a function of collector current ic for different values of base current IB at - 50 degrees C, with the measurements taken forward (increasing VCE) and backward (decreasing VCE).
  • VCE collector-emitter voltage
  • FIGS. 1 1 A and 1 1 B there show diagrams of the ring cavity device hereof utilized as an optical coherent switch.
  • Figure 12 shows an optical memory circuit that utilizes the hysteresis characteristic of the ring cavity device hereof.
  • Figures 13 and 14 are graphs useful in understanding operation of the Figure 12 memory circuit.
  • Figure 1 illustrates, in simplified form, a type of transistor light-emitter device and/or transistor laser device that can be utilized and modified in understanding and in practicing aspects of the invention.
  • a substrate 105 is provided, and the following layers are disposed thereon: subcollector 1 1 0, collector 1 30, base 140, emitter 150, and cap layer 160.
  • the base region typically contains one or more quantum wells (not separately shown).
  • collector metalization (or electrode) 1 15, base metalization 145, and emitter metalization 165.
  • Collector lead 1 17, base lead 147, and emitter lead 167 are also shown.
  • the layers can be grown, for example, by metal organic chemical vapor deposition (MOCVD).
  • MOCVD metal organic chemical vapor deposition
  • the diagram of Figure 1 illustrates, with wiggly arrows, light emission hv from the base region when operating as a light-emitting transistor, and also illustrates, with a straight arrow, stimulated emission from the base region (e.g. for an edge emitter with cleaved facets) for operation as a transistor laser.
  • light-emitting transistors and transistor lasers can also be operated as vertical emitters using, for example, upper and lower distributed Bragg reflectors (DBRs).
  • DBRs distributed Bragg reflectors
  • the epitaxial layers of the heterojunction bipolar transistor laser includes a 3000 Angstrom n-type heavily doped GaAs buffer layer, a 634 Angstrom n-type Alo.40Gao.60As layer, a 5000 Angstrom n-type Alo.95Gao.05As layer, and a 200 Angstrom n-type Alo.40Gao.65As layer, followed by a 200 Angstrom n-type collector contact layer, a 120 Angstrom n-type lno.49Gao.51 P etch stop layer, a 600 Angstrom undoped GaAs collector layer, and then a 1 010 Angstrom p-type GaAs base layer containing a 190 Angstrom undoped InGaAs quantum well (QW) designed for emission at ⁇ « 1000 nm. On top is a 150 Angstrom n-type
  • the HBLT laser structure is capped with a 1 000 Angstrom heavily doped n- type GaAs contact layer.
  • the crystal processing into TL's can be accomplished basically as described in the above citations using SIN 4 and photolithographic masking and patterning, standard wet etching of mesas and contact steps, and the usual contact metallization to effect the various stripe and contact geometries.
  • Stripe emitter widths of 4, 6, and 8 ⁇ on 500 ⁇ centers (for convenient device separation) were used, as well as basic emitter lengths of -400 ⁇ to allow mirror cleaving at 400 ⁇ multiples.
  • the basic stripe-geometry transistor laser TL, polished to a final thickness of -75 ⁇ is heat sunk on In-coated Cu heat sinks, contacted with microwave-capable probes, and operated and tested.
  • the top panel (A) of Figure 2 shows (at 15 °C) the collector l-V characteristics of a transistor laser (TL) with a 6 ⁇ emitter mesa (reduced to a 4 ⁇ oxide-defined aperture) and as-cleaved mirror facets (400 ⁇ separation). The region of laser operation is indicated by the shading.
  • the bottom panel (B) is shows the behavior of the same transistor under the same conditions, except with the reflectivity of one facet increased by applying a deformable InGa metal ball at one of the cleaved ends.
  • the TL threshold is reduced from 23 to 21 mA and the operational range is extended to higher collector voltage.
  • the schematic transistor diagrams in the insets are adjusted to show a weaker double-sided optical signal (hv) is obtained from the as-cleaved mirrors of A than from those of B where one of the mirrors is enhanced and the cavity Q is increased.
  • hv weaker double-sided optical signal
  • enhancement prevents an optical signal from being extracted from the altered (blocked) facet but not the other.
  • the high-field mode (1003 (nm) at 2.3 V switches off at slightly higher bias (2.42 V), thus reducing the photon-assisted tunneling.
  • the simplest response of the transistor laser to limit and balance lc is to shift from stimulated recombination and from stronger photon-assisted tunneling to weaker, spontaneous recombination (from high coherent to low incoherent field).
  • a further edge emitting transistor laser, with similar layer structure was implemented with effectively increased Q, and exhibited sharp vertical collector current behavior at low temperature that is highly useful for opto-electronic switching.
  • Figures 6A and 6B respectively show l-V characteristics and ⁇ as a function of base current for the 400 ⁇ edge-emitting transistor laser at -10 degrees C and at -50 degrees C, which effectively serves to decrease loss and increase optical gain, thereby effectively increasing Q.
  • Figure 6B shows a graph of ⁇ (that is, current gain ⁇ / ⁇ ) as a function of base current IB for operation at -50 degrees C.
  • a ring light-emitting transistor and ring transistor laser are set forth.
  • a ring designates a continuous loop that is preferably, but not necessarily, circular.
  • the ring cavity of a transistor laser (or light-emitting transistor) can have substantially less optical loss than conventional mirror-enclosed cavities and therefore can have a substantially higher Q.
  • FIG. 7 there is shown, in the Figure portion A, a perspective view, and in the Figure portion B, a partial cross-sectional view, of a ring cavity light- emitting transistor and ring laser in accordance with an embodiment of the invention, and which can be used in practicing an embodiment of the method of the invention.
  • the cross-section is taken through a vertical plane portion defined by the broken-line (alternating dots and dashes) of the trapezoidally shaped line b-b.
  • the transistor device can be operated as a light-emitting transistor or a transistor laser, depending on the electrical signals applied to the terminals thereof.
  • the simplified layer structure of the Figure 7 device includes a semiconductor substrate 71 0, a collector layer 720 of a second conductivity type (preferably, but not necessarily, n-type), a base layer 730 of a first conductivity type (preferably, but not necessarily, p-type), containing a quantum size layer such as one or more quantum wells (not separately shown in Figure 7) , and an emitter layer 740 of said second conductivity type.
  • the mesa of base layer 730 is formed as an annular ring over the collector layer 720, and the emitter mesa is formed as an annular ring over the base mesa.
  • the collector metalization 725 is a central disc deposited over the central region of the collector layer 740.
  • the diagram of Figure 7 is simplified for ease of explanation. As is typical for semiconductor device technology, electrode coupling to collector and emitter layers is often via respective sub-collector and sub-emitter layers, if appropriate, as will be understood throughout.
  • Base metalizations 735 and 736 are deposited as concentric annular rings on the base mesa, and have the annular emitter mesa and its annular metalization 745 therebetween and concentric therewith.
  • a lll-V oxide preferably aluminum oxide formed by oxidation of high aluminum content AIGaAs, is formed as inner and outer sidewall confining rings 741 and 742, respectively, on the inner and outer sidewalls of the emitter 740.
  • Collector, base, and emitter terminals are respectively coupled with the collector, base and emitter metalizations (with the base terminal conductor being common to the two base metalizations), and are not separately shown in Figure 7.
  • An optical output, not separately shown in Figure 7, can be derived from light scattered from the base region or from a suitable output waveguide coupled with the ring-shaped optical resonator which, in this embodiment, is centered in an annular disc at the base- emitter interface, and advantageously confined by the oxide rings.
  • the table of Figure 8 shows the layer structure for an example of this embodiment and includes lower distributed Bragg reflector (DBR) with thirty five pairs of layers (represented in abridged form at layers 1 -5) and an upper DBR with four pairs of layers (layers 1 9-20 and 22-26), thereby providing vertical confinement for the optical cavity.
  • DBR distributed Bragg reflector
  • the layer structure of this example includes: subcollector layer 6, etch stop layer 7, collector layer 8, base with quantum wells and barrier layers (layers 9-17), emitter layer 1 8, and aperture layer 21 (for oxidation).
  • FIG. 9 shows the collector-emitter voltage VCE of the ring cavity light- emitting transistor/transistor laser (LET/TL) as a function of collector current ic, for different values of base current, IB, at temperatures of -10 degrees C and -50 degrees C. The sharp switching characteristic is evident in the lower temperature characteristic.
  • VCE collector-emitter voltage
  • FIG 10 shows the collector-emitter voltage VCE of the ring cavity LET/TL as a function of collector current ic for different values of base current IB at -50 degrees C, with the measurements taken forward (increasing VCE) and backward (decreasing VCE).
  • VCE collector-emitter voltage
  • FIGS. 1 1 A and 1 1 B there are shown diagrams of the ring cavity device hereof utilized as an optical coherent switch.
  • the ring cavity light-emitting transistor/transistor laser (LET/TL) device 1 1 1 0 is shown in a common emitter configuration, with the emitter terminal at common ground potential, and the collector terminal coupled to a bias voltage VDD by a parallel combination of a resistor R and a photodiode PD.
  • the device receives base current ⁇ - ⁇ ⁇ .
  • FIG. 1 2 there is shown an optical memory circuit that utilizes the hysteresis characteristic of the ring cavity device.
  • the memory element has an optical input and an optical output.
  • the ring cavity light-emitting transistor/transistor laser (LET/TL) is represented at 1 210, and is shown as operating at a base current, ⁇ - ⁇ .
  • the collector C of the ring cavity transistor laser is coupled with three parallel branches that determine the collator- emitter voltage VCE in this common emitter arrangement (that is, with the emitter at common ground potential).
  • a bias voltage VDD3 is coupled to the collector of the ring cavity transistor laser via resistor R1 .
  • the bias voltage VDD3 is also coupled to the collector of the ring cavity LET/TL via a photodiode PD1 .
  • a bias voltage VDD2 is coupled to the collector of the ring cavity LET/TL via a photodetector PD2.
  • the photodetector PD1 receives an optical erase pulse Perase, and the photodetector PD2 receives an optical write pulse Pwrite.
  • the optical output of the LET/TL is labeled Pread. Operation of the optical memory of Figure 1 2 can be understood with reference to the simplified graphs of Figures 1 3 and 14.
  • the hysteresis characteristic is readily seen in this graph from the substantial difference between the base current at a particular VCE (in the region of VCE between about 3 volts and 4 volts), depending upon whether VCE is in an increasing (forward) part of the characteristic or decreasing (backward) part of the characteristic.
  • the increasing part of the characteristic (see arrows from point C to A and then from point A to D) is shown in lighter gray line, and the decreasing part of the characteristic (see arrows from point D to B and then from point B to C) is shown in black line.
  • Figure 14 is a graph showing output light intensity of the ring cavity LET/TL 1 21 0 (in arbitrary units) as a function of collector-emitter voltage VCE at the same particular base current (23 mA). Again in this diagram, the line shading for the "forward" (increasing VCE) portion of the characteristic is shown in grey line, and the line shading for the "backward” (decreasing VCE) portion is shown in black line. In state C (and state A, coming from C) the ring cavity LET/TL is operating in a stimulated emission (laser) mode which is one of the two possible logical output states. Conversely, when the ring cavity LET/TL is in state B (coming from state D), the optical output is lower intensity spontaneous emission, which is the other of the two logical optical output states.
  • laser stimulated emission
  • the collector voltage is at VDDI and, as seen in Figures 1 3 and 1 4, the ring cavity LET/TL is either in state A or state B.
  • an optical erase pulse is received by photodetector PD1 , the photodetector will conduct, and the voltage at the collector of the ring cavity LET/TL will be VDD3 as seen in the Figure 13 diagram. This will put the device output in the spontaneous emission logical state (D), regardless of whether it was previously in the state A or the state B.
  • a "write" optical pulse e.g.
  • the memory functions, by virtue of the hysteresis characteristic of the LET/TL, to "remember" the state that is read in with the write pulse P write, which can be either a first binary logical state represented by a "high” light level that causes PD2 to conduct, or a second binary logical state represented by a"low” light level that does not cause PD2 to conduct.
  • the output Pread will thus be indicative of the retained written binary logical state. Ergo, an optoelectronic memory with optical input and optical output.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif de transistor électroluminescent, à cavité annulaire, qui comprend : une structure de semi-conducteur plane sur une couche de base de semi-conducteur d'un premier type de conductivité entre des couches de collecteur et d'émetteur de semi-conducteur d'un second type de conductivité ; des métallisations de base, de collecteur et d'émetteur respectivement couplées à la couche de base, à ladite couche de collecteur et à ladite couche d'émetteur, la métallisation de base comprenant au moins une bague annulaire couplée à une surface de la couche de base ; un résonateur optique en forme de bague annulaire dans une région de la structure de semi-conducteur comprenant généralement l'interface des régions de base et d'émetteur ; ce par quoi l'application de signaux électriques concernant les métallisations de base, de collecteur et d'émetteur provoque une émission de lumière dans la couche de base qui se propage dans la cavité de résonateur optique en forme de bague.
PCT/US2013/073414 2012-12-06 2013-12-05 Techniques et dispositifs de commutation optique de laser à transistor et de mémoire WO2014089355A1 (fr)

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US201261797427P 2012-12-06 2012-12-06
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050163184A1 (en) * 2000-09-29 2005-07-28 Hilliard Donald B. Optical cavity and laser
US20080240173A1 (en) * 2007-04-02 2008-10-02 Nick Holonyak Method for controlling operation of light emitting transistors and laser transistors
US20090097517A1 (en) * 2007-10-10 2009-04-16 Fuji Xerox Co., Ltd. Vcsel device and method for fabricating vcsel device
US20100202484A1 (en) * 2009-01-08 2010-08-12 Holonyak Jr Nick Light emitting and lasing semiconductor devices and methods
US20120038960A1 (en) * 2010-08-13 2012-02-16 Han Wui Then Electro-optical logic techniques and circuits
US20120068151A1 (en) * 2010-09-21 2012-03-22 Gabriel Walter Light emitting and lasing semiconductor methods and devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050163184A1 (en) * 2000-09-29 2005-07-28 Hilliard Donald B. Optical cavity and laser
US20080240173A1 (en) * 2007-04-02 2008-10-02 Nick Holonyak Method for controlling operation of light emitting transistors and laser transistors
US20090097517A1 (en) * 2007-10-10 2009-04-16 Fuji Xerox Co., Ltd. Vcsel device and method for fabricating vcsel device
US20100202484A1 (en) * 2009-01-08 2010-08-12 Holonyak Jr Nick Light emitting and lasing semiconductor devices and methods
US20120038960A1 (en) * 2010-08-13 2012-02-16 Han Wui Then Electro-optical logic techniques and circuits
US20120068151A1 (en) * 2010-09-21 2012-03-22 Gabriel Walter Light emitting and lasing semiconductor methods and devices

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