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WO2013030919A1 - Dispositif électroluminescent organique - Google Patents

Dispositif électroluminescent organique Download PDF

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Publication number
WO2013030919A1
WO2013030919A1 PCT/JP2011/069442 JP2011069442W WO2013030919A1 WO 2013030919 A1 WO2013030919 A1 WO 2013030919A1 JP 2011069442 W JP2011069442 W JP 2011069442W WO 2013030919 A1 WO2013030919 A1 WO 2013030919A1
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WO
WIPO (PCT)
Prior art keywords
layer
organic
electrode
void
substrate
Prior art date
Application number
PCT/JP2011/069442
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English (en)
Japanese (ja)
Inventor
吉田　綾子
宮口　敏
石塚　真一
Original Assignee
パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2011/069442 priority Critical patent/WO2013030919A1/fr
Publication of WO2013030919A1 publication Critical patent/WO2013030919A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing

Definitions

  • the present invention relates to an organic electroluminescence device.
  • An organic electroluminescence device (hereinafter referred to as an organic EL device) is a self-luminous surface light-emitting device, and has high visibility, can be driven at a low voltage, and has a broad emission spectrum. Research into the practical use of this is being actively conducted.
  • the organic EL device is configured, for example, by sequentially laminating a first electrode (anode), a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode (cathode) on a glass substrate.
  • An organic EL device is a device that obtains electroluminescence by current injection, and requires a larger current to flow than an electric field device such as a liquid crystal display.
  • the layer thickness of the organic functional layer provided between the anode and the cathode is on the order of submicron, current leakage may occur due to minute dust or defects in the organic functional layer.
  • the peripheral cell may be damaged.
  • Patent Document 1 discloses that each of a plurality of pixels is provided with an electrode having a disconnection function that leads to disconnection due to an overcurrent at the time of a short circuit. A technique for blocking is described.
  • Patent Document 2 describes a technique for self-repairing a short-circuit portion by applying a reverse bias voltage between electrodes to evaporate an electrode material.
  • Patent Document 3 discloses a technique for repairing a short-circuited part by irradiating a laser to the short-circuited part and removing it by melting.
  • An organic EL device has a sealing structure because it rapidly deteriorates due to oxygen or moisture.
  • a hollow sealing structure such as a sealing can is common.
  • the sealing structure that enables the device to be thinned includes a sealing structure that seals with a plate material such as a glass plate, or a thin film made of an inorganic material such as SiO 2 or SiN x and covers the entire organic EL element.
  • a sealing structure to stop.
  • a resin film is used for the substrate when the device is made flexible. Since the resin film cannot have high moisture-proof performance, it is necessary to form a moisture-proof film on the resin film surface.
  • an object of the present invention is to provide an organic electroluminescence device capable of preventing damage to the sealing layer and recurrence of leakage.
  • the organic electroluminescence device of the present invention includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and the organic function A second electrode layer provided on the layer, a connection wiring provided on the substrate and connected to the first electrode layer or the second electrode layer, and the first and second electrodes And a sealing layer that covers the laminated structure including the connection wiring and the organic functional layer, and the connection wiring has a fuse portion that is broken by an overcurrent, and at least includes a void in the fuse portion. It is characterized by being in contact with a void-containing layer having a structure.
  • FIG. 2A is a plan view showing a partial configuration of the organic EL device according to Example 1 of the invention
  • FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 2 (c) is an enlarged plan view of the fuse portion according to the embodiment of the present invention
  • 3A to 3F are plan views showing a method for manufacturing an organic EL device according to Example 1 of the invention.
  • 4 (a) to 4 (f) are respectively the 4a-4a line, 4b-4b line, 4c-4c line, 4d-4d line, 4e-4e line, 4f- in FIG. 3 (a) to (f). It is sectional drawing along 4f line.
  • An organic electroluminescent device includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and an organic functional layer.
  • a second electrode layer provided on the substrate; connection wiring provided on the substrate and connected to the first electrode layer or the second electrode layer; first and second electrode layers; connection wiring; and organic And a sealing layer that covers the laminated structure including the functional layer.
  • the connection wiring has a fuse part that is broken by an overcurrent, and is in contact with a void-containing layer having a void-containing structure at least in the fuse part.
  • FIG. 1 is a plan view showing a configuration of an organic EL device 1 according to an embodiment of the present invention.
  • 2A is an enlarged plan view showing a partial configuration of the organic EL device 1
  • FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 2A
  • FIG. It is the top view which expanded and displayed the fuse part which concerns on the Example of invention.
  • the configuration excluding the insulating film 26 and the sealing layer 50 is shown for easy understanding.
  • the organic EL device 1 is a display device having a so-called dot matrix type display form in which each of the plurality of organic EL elements 100 functions as a pixel. That is, on the substrate 10, the plurality of power supply wirings 22 and the plurality of second electrodes 40 are arranged so as to intersect with each other, and the organic EL element 100 is disposed in the vicinity of each of these intersections.
  • Each of the organic EL elements 100 has a stacked structure in which the first electrode 20, the organic functional layer 30, and the second electrode 40 are stacked.
  • the second electrode 40 extends in a direction orthogonal to the power supply wiring 22 and is commonly used for a plurality of organic EL elements.
  • Driving power is supplied to each of the organic EL elements 100 via the power supply wiring 22 and the connection wiring 24.
  • the organic EL device 1 is a so-called bottom emission type display device that extracts light generated in the organic functional layer 30 from the substrate 10 side.
  • the substrate 10 is made of a light transmissive material such as glass.
  • the first electrode 20 provided on the substrate 10 is an anode, and a conductive metal oxide having a light transmission property such as ITO (Indium Tin Oxide) or IZO (registered trademark) (Indium Zinc Oxide) having a thickness of about 100 nm. Is formed by patterning in a rectangular shape.
  • a power supply wiring 22 for supplying driving power to the organic EL element 100 is provided on the substrate 10 so as to be separated from the first electrode 20.
  • connection wiring 24 electrically connects the power supply wiring 22 and the first electrode 20 on the substrate 10.
  • the connection wiring 24 has a disconnection function that leads to disconnection when the current injected from the power supply wiring 22 into the organic EL element 100 becomes excessive, and blocks the short-circuit current from flowing into the organic EL element 100.
  • the connection wiring 24 can be disconnected at a desired current, for example, an alloy mainly composed of tin, bismuth, lead or the like, more specifically, a solder that is a tin-based alloy, wood metal, or rose alloy , Composed of a low melting point metal such as Newton alloy.
  • connection wiring 24 has a fuse portion 24a whose line width is narrower than that of the other portion, and thereby has a current withstand capability lower than that of the other portion. That is, when the organic EL element 100 is short-circuited and an overcurrent flows through the connection wiring 24, a disconnection occurs in the fuse portion 24a.
  • the fuse portion can be configured by making the layer thickness of the connection wiring 24 smaller than that of other portions or using a material having a lower melting point. Since each organic EL element 100 is connected to the connection wiring 24 having the fuse portion 24a, even if a short circuit occurs in a specific organic EL element, damage is not spread to other organic EL elements. It has become.
  • the organic functional layer 30 is formed by laminating a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer in this order on the first electrode 20.
  • the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
  • the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-pheny] benzidine) having a thickness of about 50 nm.
  • the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
  • the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm.
  • the second electrode 40 serving as a cathode is made of, for example, Al and is provided so as to cover the organic functional layer 30.
  • the second electrode 40 extends in a direction orthogonal to the extending direction of the power supply wiring 22.
  • the insulating layer 26 is formed on the substrate 10 on which the first electrode 20, the power supply wiring 22, and the connection wiring 24 are formed. At least the end of the first electrode 20, the upper surface of the connection wiring 24 excluding the fuse portion 24a, the power supply wiring 22 is covered, and the second electrode 40 and these are electrically insulated.
  • an alloy having a relatively low work function such as Mg—Ag or Al—Li is preferable.
  • the sealing layer 50 is composed of a thin film made of an inorganic material such as SiNx, SiON, SiOx, AlOx, or AlN.
  • the sealing layer 50 covers the respective components of the organic EL device 1 described above and plays a role of preventing entry of oxygen and moisture from the outside.
  • the sealing layer 50 is formed so as to be in close contact with the organic EL element 100.
  • a void-containing layer 60 made up of a plurality of voids is interposed between the sealing layer 50 and the fuse portion 24a. That is, the connection wiring 24 is in contact with the void-containing layer 60 at least in the portion where the fuse portion 24a is formed.
  • gap content layer 60 is a layer which has a space
  • Polysilazane is usually baked at about 400 ° C., but a porous SiO 2 film can be obtained by setting the baking temperature to about 100 ° C., for example.
  • the void-containing layer 60 can be formed by applying polysilazane on the fuse portion 24a and firing at a low temperature before forming the sealing layer 50.
  • the sealing layer 50 is formed so as to cover the surface of the void-containing layer 60.
  • connection wiring 24 is connected to the first electrode 20 that is an anode.
  • connection wiring 24 may be connected to the second electrode 40 that is a cathode. In this case, it is necessary to form an insulating film between the connection wiring 24 and the first electrode 20.
  • FIGS. 3 (a) to (f) are plan views showing a method for manufacturing the organic EL device 1 having the above-described configuration
  • FIGS. 4 (a) to (f) are views in FIGS. 3 (a) to (f), respectively.
  • FIG. 4 is a sectional view taken along lines 4a-4a, 4b-4b, 4c-4c, 4d-4d, 4e-4e, and 4f-4f.
  • a light-transmitting conductive metal oxide such as ITO or IZO is deposited on the light-transmitting substrate 10 made of glass or the like by a sputtering method, for example, to a thickness of about 100 nm, and this is patterned into a rectangular shape by etching.
  • the electrode 20 is formed (FIGS. 3A and 4A).
  • a power supply wiring 22 made of a low resistance metal such as Al, Cu, Ag, Au or the like is formed on the substrate 10 at a position separated from the first electrode 20 by the same method as that for the first electrode 20.
  • alloys such as tin, bismuth, lead, etc. as the main component by mask vapor deposition, etc., more specifically, tin-based alloys such as solder, low melting point metals such as wood metal, rose alloy, and Newton alloy are used.
  • the connection wiring 24 is formed. Patterning is performed to form the fuse portion 24 a on the connection wiring 24. That is, the connection wiring 24 is patterned so that the line width is locally narrowed in the fuse portion 24a (FIGS. 3B and 4B).
  • a photosensitive resist (or polyimide) that is a material of the insulating film 26 is applied so as to cover the surfaces of the first electrode 20, the power supply wiring 22, and the connection wiring 24. Thereafter, the photosensitive resist is patterned through exposure and development. Thereby, the insulating film 26 having an opening exposing the surface of the first electrode 20 and the surface of the fuse portion 24a is formed.
  • the material of the insulating film 26 and the patterning method of the insulating film 26 are not limited to this.
  • the insulating film 26 may be an inorganic material such as SiO 2 and can be patterned by a known lift-off method or an etching method using a resist mask formed by a known photolithography technique.
  • polysilazane is applied on the fuse portion 24a exposed in the opening of the insulating film 26, and is fired at a low temperature of about 100.degree.
  • a void-containing layer 60 made of a porous SiO 2 film covering the fuse portion 24a is formed (FIGS. 3C and 4C).
  • a hole injection layer, a hole transport layer, a light-emitting layer, and an electron injection layer are sequentially formed on the first electrode 20 exposed at the opening of the insulating film 26 by an ink-jet method, a mask vapor deposition method, or the like.
  • the functional layer 30 is formed.
  • the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
  • the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-phenyl] benzidine) having a thickness of about 50 nm.
  • the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
  • the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm (FIG. 3). (D), FIG. 4 (d)).
  • Al which is an electrode material
  • Al is deposited in a desired pattern on the structure obtained through each of the above steps by vapor deposition using a mask having an opening corresponding to the pattern of the second electrode 40.
  • the second electrode 40 connected to the organic functional layer 30 and extending in a direction perpendicular to the extending direction of the power supply wiring 22 is formed. That is, the organic functional layer 30 is sandwiched between the first electrode 20 and the second electrode 40, and the second electrode 40 is insulated from the power supply wiring 22 and the connection wiring 24 by the insulating layer 26 (FIG. 3 (e), FIG. 4 (e)).
  • the sealing layer 50 is formed.
  • the sealing layer 50 is formed in close contact with the organic EL element 100.
  • the sealing layer 50 is formed so as to cover the void-containing layer 60 (FIGS. 3 (f) and 4 (f)).
  • the organic EL device 1 is completed through the above steps.
  • the organic EL device 1 when an overcurrent flows from the power supply wiring 22 to the organic EL element 100 via the connection wiring 24 due to a short circuit between the first and second electrodes.
  • the connection wiring 24 In the fuse portion 24a, the connection wiring 24 is disconnected, and the current supply to the organic EL element 100 is interrupted.
  • the connection wiring 24 is broken, the metal constituting the connection wiring 24 generates heat and melts and evaporates. Since the void-containing layer 60 is porous, the molten metal of the connection wiring 24 impregnates the void-containing layer 60 by capillary action.
  • the void-containing layer 60 Since the void-containing layer 60 has a plurality of voids that take in the molten metal, the void-containing layer 60 does not expand or deform significantly by absorbing the molten metal. Therefore, the sealing layer 50 covering the void-containing layer 60 is not damaged with the disconnection of the connection wiring 24, and the sealing performance is not impaired. As described above, according to the organic EL device according to the present embodiment, even when the connection wiring 24 is disconnected by the fuse function, heat and impact due to the disconnection of the connection wiring are blocked by the void-containing layer 60. The layer 50 is not destroyed and the sealing performance is maintained. Moreover, since the disconnection location of the connection wiring 24 is absorbed by the space
  • the void-containing layer 60 is composed of a porous SiO 2 film, but is not limited thereto.
  • Several other structural examples of the void-containing layer 60 having a void-containing structure including a plurality of voids are shown below.
  • the void-containing layer 60 can be composed of a fibrous material having a fine three-dimensional network structure. Specifically, a glass fiber, a ceramic fiber, an organic fiber, a bio-nanofiber or the like woven in a mesh shape can be used. A plurality of voids are formed in the network structure.
  • the fibrous material may have a network structure using a binder made of novolac resin or the like. The network structure made of such a fibrous material is fixed on the fuse portion 24a using a resin-based bonding material or the like before the sealing layer 50 is formed.
  • the molten metal can be impregnated into the void-containing layer 60 by a capillary phenomenon, and the connection wiring 24 is caused by overcurrent. Even when a disconnection occurs, the performance of the sealing layer 50 can be maintained.
  • the void-containing layer 60 can be constituted by a layer containing a large number of granular materials such as glass particles and ceramic particles. In this case, a plurality of voids are formed between adjacent granular materials.
  • the granular material can be formed using a resin binder or the like. By adjusting the particle size of the granular material, the viscosity of the binder, etc., it is possible to form a film while leaving a void.
  • the void-containing layer 60 is composed of a layer containing a plurality of granular materials, it is possible to impregnate the molten metal into the void-containing layer 60 by capillary action, and the connection wiring 24 is disconnected due to overcurrent. Even when this occurs, the performance of the sealing layer 50 can be maintained.
  • the void-containing layer 60 is composed of a material that exhibits good wettability with respect to the wiring material, or at least has voids. It is preferable that the wall portion to be defined is covered with a material that exhibits good wettability with respect to the wiring material. For example, by using aluminum oxide or aluminum oxynitride exhibiting good wettability to the molten metal, the void-containing layer 60 is formed, or the partition walls separating the air gaps are coated with aluminum oxide or aluminum oxynitride. Wetability can be secured.
  • a connection wiring 24 having a first electrode 20, a power supply wiring 22, and a fuse portion 24a is formed on the substrate 10.
  • an insulating film 26 having an opening is formed on the first electrode 20 and the fuse portion 24a.
  • a bank (partition wall) 27 is formed so as to surround the fuse portion 24a.
  • the bank 27 is formed by depositing an organic material such as photosensitive polyimide and patterning it by an exposure / development process.
  • the bank 27 forms a partition wall that surrounds the fuse portion 24a.
  • the bank 27 can be formed on the first electrode 20 and the power supply wiring 22.
  • polysilazane is applied to the upper surface of the fuse portion 24a surrounded by the bank 27, and is fired at a low temperature of about 100.degree.
  • a void-containing layer 60 made of a porous SiO 2 film covering the fuse portion 24a is formed (FIG. 5A).
  • the organic functional layer 30 is formed on the first electrode 20.
  • the second electrode 40 connected to the organic functional layer 30 and extending in a direction orthogonal to the extending direction of the power supply wiring 22 is formed (FIG. 5B).
  • a sealing layer 50 made of an inorganic material is formed so as to entirely cover the structure obtained through the above steps.
  • the sealing layer 50 is formed in close contact with the organic EL element 100.
  • the sealing layer 50 is formed so as to cover the void-containing layer 60 (FIG. 5C).
  • the organic EL device 1 is completed through the above steps.
  • a similar bank may be used for patterning the second electrode 40.
  • This partition wall is formed in a non-formed portion of the second electrode 40 and can be formed on the void-containing layer 60.
  • FIG. 6 is a cross-sectional view showing a configuration of an organic EL device 2 according to Example 2 of the present invention.
  • the organic EL device 2 is different from the organic EL device according to Example 1 in that it has a sealing structure for sealing with a plate-shaped sealing plate.
  • the organic EL element 100, the power supply wiring 22, and the connection wiring 24 having the fuse portion 24a are provided, and the void-containing layer 60 is provided so as to cover the fuse portion 24a.
  • a sealing plate 54 made of a plate material such as a glass plate, a plastic plate, or a metal plate is provided on the substrate 10 via an adhesive layer 52.
  • the adhesive layer 52 is made of, for example, a thermosetting or ultraviolet curable silicone resin.
  • the organic EL element 100 is embedded in the adhesive layer 52.
  • the gap-containing layer 60 is provided on the fuse portion 24a as in the case of the film sealing structure.
  • the adhesive layer 52 and the sealing member 54 covering the void-containing layer 60 are not damaged, the sealing performance is not impaired, and the leak does not recur.
  • FIG. 7 is a plan view showing a configuration of the organic EL device 3 in which the arrangement of electrodes, wirings, and organic EL elements is modified.
  • connection wires 24 are connected to one of the power supply wires 22 formed on the substrate 10.
  • the plurality of connection wirings 24 are juxtaposed at equal intervals in a state of being collected at one place (or a plurality of places), and each has a fuse portion 24a as in the above embodiments.
  • Each of the connection wirings 24 is connected to the first electrode 20 patterned in a strip shape.
  • a strip-shaped organic functional layer 30 is also provided on the first electrode 20.
  • a second electrode 40 common to the plurality of organic EL elements 100 is provided on the organic functional layer 30. The second electrode 40 extends in parallel with the extending direction of the power supply wiring 22.
  • the 2nd electrode 40 is isolate
  • FIG. According to such a layout in which the connection wirings 24 are gathered in one place, the fuse portions 24a can be gathered in one place, so that patterning of the sealing layer (that is, formation of the void layer) is facilitated.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention porte sur un dispositif électroluminescent organique qui contient : un substrat ; une première couche d'électrode agencée sur le substrat ; un fil de connexion agencé sur le substrat et connecté à la première couche d'électrode ; une couche fonctionnelle organique agencée sur la première couche d'électrode et contenant un matériau organique ; une seconde couche d'électrode agencée sur la couche fonctionnelle organique ; et une couche de scellement pour couvrir une structure stratifiée contenant les première et seconde couches d'électrode, le fil de connexion et la couche fonctionnelle organique. Le fil de connexion comprend une partie fusible pour rompre la connexion lorsqu'il existe une surintensité, et entre en contact avec une couche contenant une discontinuité ayant une structure contenant une discontinuité au moins au niveau de la partie fusible.
PCT/JP2011/069442 2011-08-29 2011-08-29 Dispositif électroluminescent organique WO2013030919A1 (fr)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105103330A (zh) * 2013-04-01 2015-11-25 株式会社Lg化学 有机发光器件及其制造方法
CN105210206A (zh) * 2013-05-16 2015-12-30 株式会社Lg化学 有机发光器件及其制造方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2001196190A (ja) * 2000-01-14 2001-07-19 Fuji Electric Co Ltd 有機薄膜発光ディスプレイ
JP2005209633A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の作製方法
JP2005209647A (ja) * 1998-12-16 2005-08-04 Cambridge Display Technol Ltd 有機発光デバイス
JP2007207569A (ja) * 2006-02-01 2007-08-16 Tohoku Pioneer Corp 光デバイス、および光デバイスの製造方法
JP2009245708A (ja) * 2008-03-31 2009-10-22 Hitachi Displays Ltd 有機ｅｌ表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209647A (ja) * 1998-12-16 2005-08-04 Cambridge Display Technol Ltd 有機発光デバイス
JP2001196190A (ja) * 2000-01-14 2001-07-19 Fuji Electric Co Ltd 有機薄膜発光ディスプレイ
JP2005209633A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の作製方法
JP2007207569A (ja) * 2006-02-01 2007-08-16 Tohoku Pioneer Corp 光デバイス、および光デバイスの製造方法
JP2009245708A (ja) * 2008-03-31 2009-10-22 Hitachi Displays Ltd 有機ｅｌ表示装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105103330A (zh) * 2013-04-01 2015-11-25 株式会社Lg化学 有机发光器件及其制造方法
US9825249B2 (en) 2013-04-01 2017-11-21 Lg Display Co., Ltd. Organic light emitting device and method for manufacturing the same
CN105210206A (zh) * 2013-05-16 2015-12-30 株式会社Lg化学 有机发光器件及其制造方法
TWI594475B (zh) * 2013-05-16 2017-08-01 樂金顯示科技股份有限公司 有機發光裝置、其製造方法及其應用
US9793333B2 (en) 2013-05-16 2017-10-17 Lg Display Co., Ltd. Organic light-emitting device and method of manufacturing same

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