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WO2013018995A1 - Procédé de formation d'une électrode en polymère conducteur et procédé de fabrication d'un transistor organique à couche mince au moyen dudit procédé - Google Patents

Procédé de formation d'une électrode en polymère conducteur et procédé de fabrication d'un transistor organique à couche mince au moyen dudit procédé Download PDF

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Publication number
WO2013018995A1
WO2013018995A1 PCT/KR2012/005313 KR2012005313W WO2013018995A1 WO 2013018995 A1 WO2013018995 A1 WO 2013018995A1 KR 2012005313 W KR2012005313 W KR 2012005313W WO 2013018995 A1 WO2013018995 A1 WO 2013018995A1
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initiator
conductive polymer
thin film
film transistor
forming
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PCT/KR2012/005313
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English (en)
Korean (ko)
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김성현
송기국
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경희대학교 산학협력단
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Publication of WO2013018995A1 publication Critical patent/WO2013018995A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene

Definitions

  • the present invention relates to a method of forming a conductive polymer electrode, and more particularly, a method of forming a conductive polymer electrode capable of forming a conductive polymer electrode at low cost by using a film forming technique incorporating inkjet printing technology and vapor deposition polymerization technology. It relates to a method for manufacturing an organic thin film transistor using the same.
  • the flat panel display is significantly thinner than the CRT display, and has the advantage of making screens of various sizes ranging from small to large.
  • Thin film transistors are a type of field effect transistor.
  • a field effect transistor has a capacitor structure including a metal electrode, an insulating layer, and a semiconductor layer.
  • a negative voltage (electron) or negative voltage is applied to the opposite semiconductor by applying a positive voltage to the metal electrode (gate electrode) with an insulating layer interposed therebetween.
  • a positive charge holes can be drawn to the interface between the insulator and the semiconductor to form a charge layer, and the amount of charge can also be adjusted to the size of the voltage.
  • Attaching metal electrodes (source and drain electrodes) to both ends of the charge layer thus formed becomes a resistor, which becomes a kind of variable resistor that can be controlled by the magnitude of the voltage applied to the gate electrode and the source-drain voltage.
  • a metal electrode is attached to a semiconductor layer without using a doped region as a source and a drain electrode, and the semiconductor layer is manufactured as a thin film.
  • an organic thin-film transistor is made of an organic material in various parts of the thin film transistor.
  • Organic thin film transistors can be manufactured in low temperature processes, and by utilizing the unique advantages of organic materials, new application devices such as flexible displays can be created.
  • an organic thin film forming process is important.
  • the organic thin film deposition process include spin coating, printing, and vacuum deposition.
  • the printing method is advantageous to implement an inexpensive organic thin film transistor.
  • Printing is emerging as a next-generation low-cost process technology, and its application field is expanding to new products such as displays, RFID, memory, solar cells, sensors, and transparent transistors.
  • As the printing method inkjet printing, micro-contact printing, screen printing, spray printing and the like are known.
  • inkjet printing technology is a printing process technology capable of direct patterning in a patterning on demand method by ejecting fine ink droplets. Since inkjet printing technology is composed of a much smaller number of equipment than the existing photo process, it has a low process cost characteristic, and because there is no coating, developing, and cleaning process, waste water is used and it is evaluated as an environmentally friendly technology. . In addition, there is an advantage that a large-area process is possible and mass production is possible.
  • Conductive polymers have attracted attention as electrode materials for flexible electronic devices.
  • conductive polymers have insulation properties due to the large band gap energy between the valence band and conduction band where outermost electrons covalently bond are located. It is movable and conductive.
  • Conductive polymers also called ⁇ -conjugated polymers, have a chemical structure in which single bonds ( ⁇ -bonds) and multiple bonds ( ⁇ -bonds) are repeated, which are delocalized by these chemical bonds to bond chains. Has a ⁇ -electron that can move relatively freely along
  • Such conductive polymers are expected to be applicable to various electronic devices because they have advantages such as ease of processing, low weight, and flexibility. However, since most conductive polymers are not dispersed in a general solvent, it is difficult to meet the physical conditions of the ink for forming a film by the printing method, and there are various difficulties in applying them to actual device manufacturing.
  • the present invention has been made in view of this point, and an object of the present invention is a method of forming a conductive polymer electrode capable of forming a conductive polymer electrode at low cost by using a film forming technology incorporating inkjet printing technology and vapor deposition polymerization technology; It is to provide a method of manufacturing an organic thin film transistor using the same.
  • Method for forming a conductive polymer electrode according to the present invention for achieving the above object, (a) applying an initiator solution on the substrate by an inkjet printing method to form an initiator pattern on the substrate, (b) the initiator pattern is formed Placing the substrate in a decompression chamber and supplying a conductive polymer monomer vapor to the decompression chamber to agglomerate and polymerize the conductive polymer monomer on the initiator pattern.
  • the method of forming a conductive polymer electrode according to the present invention may further include surface modifying the surface of the substrate to improve hydrophilicity so that the initiator solution can be smoothly printed on the substrate before step (a).
  • Hydrophilic surface modification to the substrate can be accomplished through O 2 plasma surface treatment.
  • the conductive polymer is PEDOT / PSS (poly (3,4-ethylenedioxythiophene) / poly (4-styrene sulfonate), PANI (polyaniline), PPy (polypyrrole), PT (polythiophene), PA (polyacetylene), PPV (poly para- phenylene vinylene).
  • PEDOT / PSS poly (3,4-ethylenedioxythiophene) / poly (4-styrene sulfonate)
  • PANI polyaniline
  • PPy polypyrrole
  • PT polythiophene
  • PA polyacetylene
  • PPV poly para- phenylene vinylene
  • the initiator solution may include an initiator selected from APS (ammonium persulfate), CuCl 2 , FeCl 3 and distilled water.
  • the initiator solution may further include poly (4-styrenesulfonate) (PSS).
  • PSS poly (4-styrenesulfonate)
  • the content of the PSS in the initiator solution is preferably 5wt% ⁇ 9wt%.
  • a method of manufacturing an organic thin film transistor comprising: (a) forming a gate electrode on a substrate, (b) forming an insulating layer on the substrate to cover the gate electrode, ( c) forming a semiconductor layer on the insulating layer, (d) applying an initiator solution on the insulating layer by inkjet printing to form a first initiator pattern on the insulating layer and in contact with the semiconductor layer, (e) Coating an initiator solution on the insulating layer by inkjet printing to form a second initiator pattern spaced apart from the first initiator pattern and in contact with the semiconductor layer on the insulating layer, (f) the gate electrode, the insulating layer, Put the substrate on which the semiconductor layer, the first initiator pattern and the second initiator pattern are formed, into a decompression chamber and a conductive polymer monomer in the decompression chamber.
  • the source electrode is formed in the shape of the first initiator pattern by supplying steam, amplifying and polymerizing the conductive polymer monomer on the first initiator pattern, and coagulating and polymerizing the conductive polymer monomer on the second initiator pattern. And forming a drain electrode in the shape of the 2 initiator pattern.
  • the surface of the semiconductor layer may be improved to improve hydrophilicity so that the initiator solution may be smoothly printed on the semiconductor layer after the step (c) and before the step (d).
  • the method may further include modifying.
  • Hydrophilic surface modification to the semiconductor layer may be made through O 2 plasma surface treatment.
  • the insulating layer may be made of a material selected from polyvinylphenol (PVP), polyvinylalcohol (PVA), and PMMA.
  • PVP polyvinylphenol
  • PVA polyvinylalcohol
  • PMMA polymethyl methacrylate
  • the semiconductor layer may include pentacene, TIPS-pentacene, poly (3-alkyl) thiophene (P3HT), poly (2,5-bis (3-alkylthiophen-2-yl) thieno [3,2- b] thiophene).
  • the method for forming a conductive polymer electrode according to the present invention by using an inkjet printing method to print an initiator pattern, by exposing the initiator pattern in the vapor of the conductive polymer monomer using a method of agglomeration and polymerization of the conductive polymer monomer on the initiator pattern
  • the conductive polymer electrode can be formed at low cost.
  • the method of forming a conductive polymer electrode according to the present invention can be mass-produced at room temperature without using expensive equipment by using the inkjet printing method and vapor deposition polymerization method.
  • FIG. 1 shows a manufacturing process of an organic thin film transistor using the method of manufacturing an organic thin film transistor according to the present invention.
  • FIG. 2 illustrates a process of forming an initiator pattern by an inkjet printing method in a process of manufacturing an organic thin film transistor using the method of manufacturing an organic thin film transistor according to the present invention.
  • FIG 3 illustrates a process of agglomerating and polymerizing a conductive polymer monomer vaporized on an initiator pattern during a process of manufacturing an organic thin film transistor using the method of manufacturing an organic thin film transistor according to the present invention.
  • FIG. 4 illustrates an organic thin film transistor manufactured by a method of manufacturing an organic thin film transistor according to an embodiment of the present invention.
  • 5 is a graph showing the change in surface resistance of the source electrode and the drain electrode according to the amount of PSS added in the initiator solution.
  • FIG. 1 shows a manufacturing process of an organic thin film transistor using the method of manufacturing an organic thin film transistor according to the present invention.
  • the gate electrode 11 on the substrate 10 (b) and forming the insulating layer 12 on the gate electrode 11.
  • (C) forming the semiconductor layer 13 on the insulating layer 12, and forming the source electrode 16 and the drain electrode 17 on the semiconductor layer 13 Include.
  • the source electrode 16 and the drain electrode 17 are made of a conductive polymer and are made through a film forming process in which inkjet printing and vapor deposition polymerization are combined.
  • Specific manufacturing process of the organic thin film transistor using the method of manufacturing an organic thin film transistor according to the present invention is as follows.
  • the substrate 10 is prepared (a), and the gate electrode 11 is formed on the substrate 10 (b).
  • the substrate 10 may be made of a soft material such as polyethylenesulfone (PES), or various materials that may be used as a substrate of a conventional organic thin film transistor.
  • the gate electrode 11 may be made of various materials that may be used as electrodes such as various metals or conductive polymers, and may be formed through various deposition processes including various deposition methods.
  • the insulating layer 12 is formed on the substrate 10 on which the gate electrode 11 is formed (c).
  • the insulating layer 12 may be made of various materials that may be used as insulating layers of polyvinylphenol (PVP), polyvinylalcohol (PVA), PMMA, or other conventional organic thin film transistors.
  • the insulating layer 12 may be made through various thin film forming processes. For example, a dielectric material selected from polyvinylphenol (PVP), polyvinylalcohol (PVA), and PMMA is dissolved in a solvent together with a crosslinking agent to form an insulator solution, and the insulator solution is spin gated to form a gate electrode.
  • the insulating layer 12 can be formed by crosslinking by applying heat.
  • the semiconductor layer 13 is formed on the insulating layer 12 (d).
  • the semiconductor layer 13 may be made of pentacene, TIPS-pentacene, poly (3-alkyl) thiophene (P3HT), poly (2,5-bis (3-alkylthiophen-2-yl) thieno [3,] 2-b] thiophene), or various materials that can be used as a semiconductor layer of a conventional organic thin film transistor, and may be formed on the insulating layer 12 through various film forming processes.
  • the surface of the semiconductor layer 13 may be surface modified to improve hydrophilicity.
  • the hydrophilic surface modification for the semiconductor layer 13 is to enable the initiator solution 19 to be described later to be well printed on the semiconductor layer 13.
  • various methods such as surface treatment using plasma, surface treatment using ultraviolet rays or gamma rays, mechanical surface treatment, and surface treatment using chemical reactions can be used.
  • the hydrophilic surface modification the surface of the semiconductor layer 13 is modified to be hydrophilic and the surface energy is increased, so that the initiator solution 19 may be uniformly printed on the surface of the semiconductor layer 13.
  • O 2 plasma surface treatment is a method of improving hydrophilicity while less damaging the surface of the semiconductor layer 13 when the treatment intensity or treatment time is well controlled.
  • the initiator solution 19 is applied onto the insulating layer 12 on which the semiconductor layer 13 is formed, and the first initiator pattern 14 and the second initiator pattern 15 contacting the semiconductor layer 13 are formed.
  • conductive polymers can be deposited on the surfaces of various objects. Ammonium persulfate (APS), CuCl 2 , FeCl 3 , or other various materials capable of polymerizing conductive polymer monomers may be used as the initiator.
  • the initiator solution 19 may be made by mixing an initiator and an additive for controlling physical properties of the initiator solution 19 in distilled water.
  • the first initiator pattern 14 and the second initiator pattern 15 are formed by printing the initiator solution 19 on the semiconductor layer 13 and the insulating layer 12 by inkjet printing.
  • the quality of the thin film formed varies depending on the kind of material to be formed, the viscosity of the ink, the printing method, and the like.
  • a low cost desktop printer cartridge 30 can be used to print the initiator solution 19.
  • the use of the entry-level desktop printer cartridge 30 has an advantage of greatly lowering the manufacturing cost even though the film formation resolution is somewhat reduced.
  • the physical properties of the initiator solution 19 are important for printing the initiator solution 19 with the desktop printer cartridge 30 to form the initiator patterns 14 and 15 in good form.
  • the viscosity of the initiator solution is 1 mPa ⁇ s to 30 mPa ⁇ s
  • the surface energy of the initiator solution 19 is preferably 30 mN ⁇ m ⁇ 1 or more.
  • PSS polystyrene 4-styrenesulfonate
  • PSS may be used as an additive for adjusting the physical properties of the initiator solution (19).
  • PSS is an electrical nonconductor, which causes agglomeration above a certain concentration and degrades electrical properties, but due to the low surface energy, PSS increases the contact force between the initiator patterns 14 and 15 and the semiconductor layer, 15) to improve the edge line resolution. Therefore, if the amount of PSS is properly adjusted, the pattern resolution of the source electrode 16 and the drain electrode 17 can be improved without impairing the electrical properties of the source electrode 16 and the drain electrode 17, thereby improving device performance. Can be.
  • Conductive polymers include PEDOT / PSS (poly (3,4-ethylenedioxythiophene) / poly (4-styrene sulfonate), PANI (polyaniline), PPy (polypyrrole), PT (polythiophene), PA (polyacetylene), PPV (poly para- phenylene vinylene), or various other conventionally known conductive polymers can be used.
  • vapor phase deposition polymerization As a method of agglomerating or collecting the conductive polymer on the first initiator pattern 14 and the second initiator pattern 15, vapor phase deposition polymerization is used.
  • the conductive polymer monomer may be polymerized on the initiator patterns 14 and 15, and the specific process thereof is as follows.
  • the substrate 10 having the insulating layer 12, the semiconductor layer 13, the first initiator pattern 14, and the second initiator pattern 15 is placed in the decompression chamber 40.
  • the conductive polymer monomer vapor 20 is supplied to the decompression chamber 40.
  • the vaporized conductive polymer monomer is absorbed only in the first initiator pattern 14 and the second initiator pattern 15, and thus the first initiator pattern 14 ) And the second initiator pattern 15.
  • a source electrode 16 and a drain electrode 17 made of a conductive polymer are formed in the shape of the first initiator pattern 14 and the second initiator pattern 15 on the semiconductor layer 13.
  • the organic thin film transistor 18 may be subjected to a heat treatment process for removing moisture. If the moisture is removed by applying heat to the organic thin film transistor 18, the electrical performance of the organic thin film transistor 18 may be improved.
  • the method of forming the conductive polymer electrode according to the present invention is the same as the method of forming the source electrode and the drain electrode in the above-described method of manufacturing the organic thin film transistor. That is, after the initiator solution is printed on the substrate by inkjet printing to form an initiator pattern, the initiator pattern is exposed in the conductive polymer monomer vapor to aggregate and polymerize the conductive polymer monomer on the initiator pattern, thereby forming a conductive polymer in the shape of the initiator pattern.
  • the formed electrode can be formed.
  • the electrode thus formed may be used in a state of being deposited on a substrate, or may be removed from the substrate and then transferred to another substrate.
  • the method for forming a conductive polymer electrode according to the present invention is to print an initiator solution by inkjet printing to form an initiator pattern, and expose the initiator pattern to the conductive polymer monomer vapor to aggregate and polymerize the conductive polymer monomer on the initiator pattern.
  • the conductive polymer electrode can be formed at low cost.
  • a soft PES (Polyethylenesulfone, i-component Co. Ltd.) substrate was prepared, and gold (Au) was thermally deposited on the PES substrate at a deposition rate of 1.0 Pa ⁇ s ⁇ 1 to form a gate electrode of 50 nm.
  • PVP poly (4-vinylphenol), Mw ⁇ 30,000g / mol, Sigma Aldrich Co. Ltd.) dielectric material and Poly (melamine-co-formaldehyde, Sigma Aldrich Co. Ltd.)
  • a PVP insulator solution was prepared by dissolving in 10 ml of solvent PGMEA (propylene glycol methyl ether acetate, Sigma Aldrich Co. Ltd.) at a molar ratio of 1.
  • the PVP insulator solution was spin cast on the PES substrate at 4000 rpm for 30 seconds, crosslinked at 130 ° C. for 15 minutes, and at 200 ° C. for 5 minutes in nitrogen (N 2 ) atmosphere to form a 300 nm PVP insulating layer. Formed.
  • the PES substrate on which the PVP insulation layer was formed was placed in a vacuum chamber and maintained at a pressure of 5 ⁇ 10 ⁇ 6 torr or lower at room temperature while pentacene (Pentacene, 99.995% trace metals basis, Sigma Aldrich Co. Ltd. ) was deposited at a deposition rate of 0.4 Pa ⁇ s ⁇ 1 to form a pentacene semiconductor layer on the PVP insulating layer.
  • Pentacene is an aromatic ring compound to which five benzene molecules are attached, and is attracting attention as an organic semiconductor material due to its high mobility of charge.
  • the pentacene semiconductor layer was subjected to O 2 plasma treatment at 80 W intensity for 1 second to modify the pentacene semiconductor layer on a hydrophilic surface.
  • the oxidizing agent APS (ammonium persulfate, 98%, Sigma Aldrich Co. Ltd.) 30 wt% and the additive PSS (poly (4-styrenesulfonate, 30 wt% in H2O, Mw ⁇ 70,000 g / mol, Sigma Aldrich Co. Ltd.) was mixed with 10 mL of distilled water to form an initiator solution, which was then coated on a PVP insulating layer on which a pentacene semiconductor layer was formed using a desktop printer cartridge to form an initiator pattern. %, 6wt%, 9wt% and 12wt% were adjusted, and initiator solution and initiator pattern were made according to the amount of PSS added.
  • APS ammonium persulfate, 98%, Sigma Aldrich Co. Ltd.
  • PSS poly (4-styrenesulfonate, 30 wt% in H2O, Mw ⁇ 70,000 g / mol, Sigma Aldrich Co. Ltd.
  • the PES substrate on which the initiator pattern was formed was placed in a decompression chamber supplied with pyrrole monomer vapor, and exposed to pyrrole monomer vapor for 10 minutes to vaporize the pyrrole source electrode and the drain electrode on the initiator pattern.
  • Deposition polymerization Pyrrole, a conductive polymer, is an organic compound belonging to the heterocyclic group in which four carbon atoms and one nitrogen atom form a ring structure.
  • the completed organic thin film transistor was heated to 100 ° C. for 10 minutes to remove residual moisture of the pyrrole source electrode and the drain electrode to improve electrical performance.
  • each of the source electrode and the drain electrode is 450 nm, and the channel length between the source electrode and the drain electrode is 135 ⁇ m.
  • the amount of PSS added to the initiator solution affects the edge line roughness and surface resistance of the source and drain electrodes.
  • the edge line roughness and surface resistance of the source electrode and the drain electrode according to the change amount of the PSS while changing the amount of PSS added to the initiator solution are as follows.
  • the coarse protrusions formed on the edge lines of the source electrode and the drain electrode decreased until the amount of PSS increased to 6wt%.
  • the edge line roughness of the source electrode and the drain electrode was rather increased. This is because when the addition amount of PSS exceeds 6 wt%, the nozzle of the desktop printer cartridge starts to clog and the edge line accuracy is lowered.
  • the surface resistance of the source electrode and the drain electrode was 2.75 ⁇ 10 3 ⁇ / sq without PSS, and it was 8.61 ⁇ 10 4 ⁇ / sq when the amount of PSS added was 12wt%. It appeared to increase.
  • the addition amount of PSS in the initiator solution is between 5wt% ⁇ 9wt%. This is because the surface resistance of the source electrode and the drain electrode is suitable for use as the organic electrode when the amount of the PSS added has a value between 5 wt% and 9 wt%.
  • the addition amount of PSS in the initiator solution is more preferably 6wt%. This is because, when the amount of PSS added is 6 wt%, the surface resistance of the source electrode and the drain electrode is 1.74 ⁇ 10 4 Pa / sq, which is sufficient to be used as the organic electrode, and the roughness of the edge line is small.

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Abstract

La présente invention concerne un procédé de formation d'une électrode en polymère conducteur, et plus particulièrement un procédé de formation d'une électrode en polymère conducteur et un procédé de fabrication d'un transistor organique à couche mince au moyen de ladite électrode, pouvant former l'électrode en polymère conducteur à faible coût au moyen d'un procédé de formation de film obtenu par une greffe d'un procédé d'impression à jet d'encre et d'un procédé de polymérisation par dépôt en phase vapeur . Selon la présente invention, le procédé de formation de l'électrode en polymère conducteur peut former l'électrode en polymère conducteur à faible coût au moyen d'un procédé de fabrication d'un motif d'initiateur par impression d'une solution d'initiateur à la manière d'une impression au jet d'encre, et concentration et polymérisation de monomères en polymère conducteur sur le motif d'initiateur par exposition du motif d'initiateur à la vapeur de monomère en polymère conducteur.
PCT/KR2012/005313 2011-07-29 2012-07-04 Procédé de formation d'une électrode en polymère conducteur et procédé de fabrication d'un transistor organique à couche mince au moyen dudit procédé WO2013018995A1 (fr)

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KR10-2011-0076008 2011-07-29
KR1020110076008A KR20130014090A (ko) 2011-07-29 2011-07-29 전도성 고분자 전극의 형성방법 및 이를 이용한 유기박막 트랜지스터의 제조방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024028539A1 (fr) * 2022-08-05 2024-02-08 Turun Yliopisto Procédé de fabrication d'une structure de film polymère à motifs

Citations (3)

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