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WO2013011289A3 - Switching circuits - Google Patents

Switching circuits Download PDF

Info

Publication number
WO2013011289A3
WO2013011289A3 PCT/GB2012/051673 GB2012051673W WO2013011289A3 WO 2013011289 A3 WO2013011289 A3 WO 2013011289A3 GB 2012051673 W GB2012051673 W GB 2012051673W WO 2013011289 A3 WO2013011289 A3 WO 2013011289A3
Authority
WO
WIPO (PCT)
Prior art keywords
mosfet
jfet
circuit
gate
coupled
Prior art date
Application number
PCT/GB2012/051673
Other languages
French (fr)
Other versions
WO2013011289A2 (en
Inventor
Richard Anthony Mcmahon
Florent GUEDON
Santosh Kumar Singh
Philip John GARSED
Original Assignee
Cambridge Enterprise Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Limited filed Critical Cambridge Enterprise Limited
Publication of WO2013011289A2 publication Critical patent/WO2013011289A2/en
Publication of WO2013011289A3 publication Critical patent/WO2013011289A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/20—Modifications for resetting core switching units to a predetermined state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

We describe a protection circuit for a normally-on silicon carbide JFET (102), comprising a first power switching connection (302a) coupled to the JFET drain; a gate driver circuit (304); and a normally-off MOSFET (202) in series between the JFET source and a second power switching connection (302b). The circuit includes a diode (214) having an anode coupled to JFET gate and a cathode coupled between- the second power switching connection (302b) and a source or drain- connection of the MOSFET (202). A control circuit (206, 210, 212) is coupled to the gate (208) of the MOSFET to sense a failure of a power supply (124, 126) to the gate driver circuit (304) and to switch off the MOSFET in response, for example using a bias circuit powered from this power supply. When the MOSFET is off the external power maintains the gate of the JFET negative with respect to the source, via a circuit including the internal capacitance of the off MOSFET and the diode.
PCT/GB2012/051673 2011-07-15 2012-07-13 Switching circuits WO2013011289A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1112144.9A GB201112144D0 (en) 2011-07-15 2011-07-15 Switching circuits
GB1112144.9 2011-07-15

Publications (2)

Publication Number Publication Date
WO2013011289A2 WO2013011289A2 (en) 2013-01-24
WO2013011289A3 true WO2013011289A3 (en) 2013-04-18

Family

ID=44586622

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2012/051673 WO2013011289A2 (en) 2011-07-15 2012-07-13 Switching circuits

Country Status (2)

Country Link
GB (1) GB201112144D0 (en)
WO (1) WO2013011289A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105391281A (en) * 2014-08-29 2016-03-09 英飞凌科技奥地利有限公司 System and method for a switch having a normally-on transistor and a normally-off transistor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105874598B (en) * 2013-11-15 2019-06-18 德克萨斯仪器股份有限公司 For controlling the method and circuit of depletion mode transistor
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
WO2019049158A1 (en) * 2017-09-07 2019-03-14 Visic Technologies Ltd. High-voltage fast switching devices
CN110061726B (en) * 2019-05-14 2023-10-10 湖南大学 Series-connection type direct current protection switch based on SiC JFET
KR102726797B1 (en) * 2019-06-17 2024-11-05 현대자동차주식회사 System and method for controlling the driving of switching element for current converter
CN110365324B (en) * 2019-07-22 2024-03-15 无锡安趋电子有限公司 Grid driving circuit of power tube
CN110830015A (en) * 2019-11-08 2020-02-21 清华大学 Drive protection circuit of power semiconductor element and control method thereof
CN113054956A (en) * 2021-01-15 2021-06-29 清华大学 Pulse decomposition method for silicon carbide MOSFET switch transient process frequency domain analysis
EP4406119B1 (en) 2021-10-29 2025-04-09 Visic Technologies Ltd. Power switch with normally on transistor
CN114839499B (en) * 2022-03-02 2025-02-14 西安电子科技大学 On-line monitoring system of power device junction temperature based on dynamic threshold voltage
CN114614803B (en) * 2022-05-11 2022-08-05 合肥安赛思半导体有限公司 Multi-stage SiC-MOSFET drive circuit and control method
CN117040512B (en) * 2023-10-10 2024-02-06 广东致能科技有限公司 Driving circuit of depletion transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006029928B3 (en) * 2006-06-29 2007-09-06 Siemens Ag Electronic switching device for switching high electric current, has isolating unit connected between control connection of switching unit and load supply of another switching unit, where isolation unit decouples switching units
US20080174184A1 (en) * 2007-01-23 2008-07-24 Schneider Toshiba Inverter Europe Sas Device for controlling a power electronic switch and speed controller comprising same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006029928B3 (en) * 2006-06-29 2007-09-06 Siemens Ag Electronic switching device for switching high electric current, has isolating unit connected between control connection of switching unit and load supply of another switching unit, where isolation unit decouples switching units
US20080174184A1 (en) * 2007-01-23 2008-07-24 Schneider Toshiba Inverter Europe Sas Device for controlling a power electronic switch and speed controller comprising same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105391281A (en) * 2014-08-29 2016-03-09 英飞凌科技奥地利有限公司 System and method for a switch having a normally-on transistor and a normally-off transistor
CN105391281B (en) * 2014-08-29 2018-08-10 英飞凌科技奥地利有限公司 The system and method for switch containing normal conducting transistor and normally-off transistor

Also Published As

Publication number Publication date
GB201112144D0 (en) 2011-08-31
WO2013011289A2 (en) 2013-01-24

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