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WO2013002539A3 - Appareil et procédé de croissance de monocristal de carbure de silicium - Google Patents

Appareil et procédé de croissance de monocristal de carbure de silicium Download PDF

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Publication number
WO2013002539A3
WO2013002539A3 PCT/KR2012/005045 KR2012005045W WO2013002539A3 WO 2013002539 A3 WO2013002539 A3 WO 2013002539A3 KR 2012005045 W KR2012005045 W KR 2012005045W WO 2013002539 A3 WO2013002539 A3 WO 2013002539A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
crucible
growing
carbide single
Prior art date
Application number
PCT/KR2012/005045
Other languages
English (en)
Other versions
WO2013002539A2 (fr
Inventor
Young Shol Kim
Sun Hyuk Bae
Sung Wan Hong
Original Assignee
Sk Innovation Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Innovation Co.,Ltd. filed Critical Sk Innovation Co.,Ltd.
Priority to JP2014518793A priority Critical patent/JP5979739B2/ja
Publication of WO2013002539A2 publication Critical patent/WO2013002539A2/fr
Publication of WO2013002539A3 publication Critical patent/WO2013002539A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un appareil et un procédé de croissance de monocristal de carbure de silicium par croissance en solution Cet appareil de croissance de monocristal de carbure de silicium comprend : une chambre de réaction se trouvant dans un état de pression prédéterminé; un creuset logé dans la chambre de réaction, contenant des poudres de silicium (Si) ou de carbure de silicium (SiC) ou un mélange de celles-ci, un germe de carbure de silicium sur une partie supérieure de sa face intérieure et permettant la croissance d'un carbure de silicium, et une barre de raccordement de germe s'étendant à partir du germe de carbure de silicium, constituée de matériau de graphite; et un élément chauffant qui chauffe le creuset. Une partie intérieure du creuset présente au moins une mâchoire saillante, dont au moins une partie ou la totalité est formée le long d'une surface périphérique intérieure du creuset, la mâchoire saillante étant réalisée en matériau de graphite.
PCT/KR2012/005045 2011-06-29 2012-06-26 Appareil et procédé de croissance de monocristal de carbure de silicium WO2013002539A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014518793A JP5979739B2 (ja) 2011-06-29 2012-06-26 炭化珪素単結晶の成長装置およびその方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0063669 2011-06-29
KR1020110063669A KR20130002616A (ko) 2011-06-29 2011-06-29 탄화규소 단결정 성장 장치 및 그 방법

Publications (2)

Publication Number Publication Date
WO2013002539A2 WO2013002539A2 (fr) 2013-01-03
WO2013002539A3 true WO2013002539A3 (fr) 2013-03-14

Family

ID=47424653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005045 WO2013002539A2 (fr) 2011-06-29 2012-06-26 Appareil et procédé de croissance de monocristal de carbure de silicium

Country Status (3)

Country Link
JP (1) JP5979739B2 (fr)
KR (1) KR20130002616A (fr)
WO (1) WO2013002539A2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5828810B2 (ja) 2012-07-18 2015-12-09 新日鐵住金株式会社 溶液成長法に用いられるＳｉＣ単結晶の製造装置、当該製造装置に用いられる坩堝及び当該製造装置を用いたＳｉＣ単結晶の製造方法
WO2014017648A1 (fr) * 2012-07-27 2014-01-30 京セラ株式会社 Creuset, dispositif de croissance cristalline et procédé de croissance cristalline
KR101636435B1 (ko) * 2014-10-22 2016-07-06 한국세라믹기술원 다공성 흑연도가니 및 이를 이용한 탄화규소 단결정의 용액성장 제조방법
JP2017119594A (ja) * 2015-12-28 2017-07-06 東洋炭素株式会社 単結晶ＳｉＣの製造方法及び収容容器
KR102049021B1 (ko) * 2016-03-09 2019-11-26 주식회사 엘지화학 실리콘 카바이드 단결정 성장 장치
WO2017183747A1 (fr) * 2016-04-21 2017-10-26 한국세라믹기술원 Creuset destiné à une solution de croissance et procédé de croissance d'une solution à l'intérieur d'un creuset
KR102122739B1 (ko) * 2017-12-19 2020-06-16 한국세라믹기술원 단결정 성장을 위하여 용액에 침잠되는 돌설부를 구비하는 도가니
DE102018129492B4 (de) 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen
KR102643619B1 (ko) * 2019-06-28 2024-03-04 주식회사 엘지화학 단결정 성장 장치
CN111676519A (zh) * 2020-08-05 2020-09-18 郑红军 碳化硅晶体熔体生长装置
CN113816382B (zh) * 2021-11-17 2023-05-12 哈尔滨工业大学 一种高效低成本制备超长SiC纳米线的方法
CN114481317A (zh) * 2022-01-27 2022-05-13 北京青禾晶元半导体科技有限责任公司 一种制造碳化硅晶体的装置及制造碳化硅晶体的方法
CN115467027B (zh) * 2022-08-15 2024-02-06 上海汉虹精密机械有限公司 一种碳化硅炉腔内用导电结构
CN116695250B (zh) * 2023-06-08 2024-04-12 北京晶格领域半导体有限公司 一种液相法生长碳化硅单晶的装置
CN117230530B (zh) * 2023-11-15 2024-01-30 常州臻晶半导体有限公司 一种晶体生长加热系统及其工作方法

Citations (4)

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KR970008332B1 (ko) * 1987-10-26 1997-05-23 노오스 캐롤라이나 스테이스 유니버시티 탄화규소 단결정의 승화성장법
KR100749860B1 (ko) * 2006-01-02 2007-08-21 학교법인 동의학원 단결정 성장 장치 및 단결정 성장 방법
KR20090037377A (ko) * 2006-08-10 2009-04-15 신에쓰 가가꾸 고교 가부시끼가이샤 단결정 탄화규소 및 그 제조 방법
KR101028116B1 (ko) * 2008-12-09 2011-04-08 한국전기연구원 다수의 탄화규소 단결정 성장을 위한 장치

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JPS5795893A (en) * 1980-12-03 1982-06-14 Fujitsu Ltd Liquid phase epitaxially growing method
JPH02221187A (ja) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法
JP3893012B2 (ja) * 1999-05-22 2007-03-14 独立行政法人科学技術振興機構 Ｃｌｂｏ単結晶の育成方法
JP4225296B2 (ja) * 2005-06-20 2009-02-18 トヨタ自動車株式会社 炭化珪素単結晶の製造方法
JP5304600B2 (ja) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置及び製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008332B1 (ko) * 1987-10-26 1997-05-23 노오스 캐롤라이나 스테이스 유니버시티 탄화규소 단결정의 승화성장법
KR100749860B1 (ko) * 2006-01-02 2007-08-21 학교법인 동의학원 단결정 성장 장치 및 단결정 성장 방법
KR20090037377A (ko) * 2006-08-10 2009-04-15 신에쓰 가가꾸 고교 가부시끼가이샤 단결정 탄화규소 및 그 제조 방법
KR101028116B1 (ko) * 2008-12-09 2011-04-08 한국전기연구원 다수의 탄화규소 단결정 성장을 위한 장치

Also Published As

Publication number Publication date
KR20130002616A (ko) 2013-01-08
WO2013002539A2 (fr) 2013-01-03
JP2014518194A (ja) 2014-07-28
JP5979739B2 (ja) 2016-08-31

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