WO2013068204A1 - Radiation-emitting component - Google Patents

Abstract

A radiation-emitting component is specified, having at least one radiation-emitting semi-conductor chip (2) with a radiation exit surface comprising at least one lateral surface (4) and one main surface (3) of the radiation-emitting semi-conductor chip (2), at least one conversion element (5) arranged downstream of the radiation-emitting semi-conductor chip (2), such that a large part of a primary radiation (30) emitted during operation in the radiation-emitting semi-conductor chip (2) enters the conversion element (5), wherein a large part of the primary radiation (30) that has entered the conversion element (5) is absorbed in the conversion element (5) and the conversion element (5) emits secondary radiation (31), and at least one filter element (9) arranged downstream of the conversion element (5) and the radiation-emitting semi-conductor chip (2) such that primary radiation (30) and secondary radiation (31) exit the radiation-emitting component (2) exclusively through the filter element (9), wherein the filter element (9) prevents the passage of a large part of the primary radiation (30) entering the filter element (9).

Description

description

Radiation-emitting component A radiation-emitting component is specified. In particular, the radiation-emitting is suitable

Component for producing pure color radiation.

One problem to be solved is to

Specify radiation-emitting device having improved efficiency for generating pure color radiation and can be produced inexpensively.

According to at least one embodiment of the

Radiation-emitting component comprises this at least one radiation-emitting semiconductor chip.

By way of example, the radiation-emitting component may be a light-emitting diode, or LED for short. This means that the radiation-emitting component then emits incoherent radiation during operation. Furthermore, it is possible for the radiation-emitting component to be a laser diode. In other words, the radiation-emitting emits

Component in this case in operation monochromatic

and / or coherent radiation.

The radiation-emitting semiconductor chip may in particular be based on a nitride compound semiconductor material. "Based on nitride compound semiconductor material" in the present context means that a semiconductor layer sequence of the radiation-emitting semiconductor chip or at least a part thereof, particularly preferably at least one active zone and / or a growth substrate wafer, a nitride Compound semiconductor material, preferably AlnGamlnl-n-mN comprises or consists of this, where 0 ^ n <1, 0 ^ m <1 and n + m <1. This material does not necessarily have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.

 In particular, the radiation emitter generates

Semiconductor chip in operation blue light or UV radiation.

The radiation-emitting semiconductor chip of

Radiation-emitting device comprises a

 Radiation exit surface comprising at least one side surface and a main surface of the semiconductor chip. In this case, it is possible for the main area in the lateral direction to be many times larger than the side area of the semiconductor chip in the vertical direction. The vertical direction runs, for example, parallel to a growth direction of the epitaxially grown semiconductor layer sequence of

Radiation-emitting semiconductor chips. The lateral

Direction is perpendicular to it.

The term "side surface" in the present context, regardless of the geometric shape of an element, the totality of all side surfaces, which is not a top surface or a bottom surface of the element include. A

Side surface runs in particular obliquely or

perpendicular to the top surface and to the bottom surface of the element. The majority of a primary radiation emerges via the main surface of the radiation-emitting semiconductor chip, with a small portion of the primary radiation passing over the

Side surface exits. "Major part" in the present context means that at least 50%, preferably at least 75%, particularly preferably 90% of the emitted radiation passes through the main surface of the radiation-emitting

Semiconductor chips emerges. The generation of the primary radiation of the radiation-emitting semiconductor chip is preferably carried out in at least one of the active zones, which includes at least one quantum well structure and / or at least one pn junction. By primary radiation one understands that

electromagnetic radiation, which is emitted in particular during operation of the radiation-emitting semiconductor chip directly from the active zone having at least a first wavelength.

The radiation-emitting component may comprise one or more radiation-emitting semiconductor chips. In this case, all the semiconductor chips of the radiation-emitting component can be identical. Alternatively, it is possible that the

radiation-emitting component diverse,

in particular to various semiconductor materials

includes based semiconductor chips, which are preferably adapted for emission in different spectral ranges.

According to at least one embodiment of the

radiation-emitting component comprises the

radiation-emitting component at least one Conversion element that the radiation-emitting

Semiconductor chip is arranged downstream, such that a majority of a radiation emitted in the radiation-emitting semiconductor chip in operation primary radiation enters the conversion element, with a large part of the in the conversion element

occurred primary radiation in the conversion element

is absorbed and the conversion element emits secondary radiation. The conversion element is on the main surface of the

 Radiation exit surface of the radiation-emitting

Semiconductor chips arranged downstream such that the primary radiation of the radiation-emitting semiconductor chip in

Transmitted conversion element and the conversion element emits secondary radiation.

The conversion element comprises at least one

Conversion material or consists of a

Conversion material. For example, that is

Conversion material embedded in a matrix material such as silicone. The conversion material may in particular comprise a YAG or LuAG-based phosphor or consist of a ceramic phosphor. For example, that can

Conversion material is a YAG: Ce ³⁺ or a LuAG: Ce ³⁺ , which may include rare earths and in particular Gd, Ga or Sc. Furthermore, the conversion material may comprise at least one of the following conversion materials or consist of one of these conversion materials:

SrSiON: Eu ²⁺ , (Sr, Ba, Ca) ₂ Si ₅ N ₈ : Eu ²⁺ , (Sr, Ca) AlSiN ₃ : Eu ²⁺ ,

CaSiA10N: Eu ²⁺ .

Preferably, the conversion element converts a majority of the primary radiation into secondary radiation. "Majority" in the present context means that at least 50%, preferably At least 75%, particularly preferably 90% of the primary radiation is absorbed by the conversion element and correspondingly secondary radiation is emitted by the conversion element. This means that particularly preferably at least 90% of the primary radiation emitted by the semiconductor chip into the

Conversion element is absorbed and emitted as secondary radiation.

In the case of the radiation-emitting semiconductor chip

emitted primary radiation is in particular not a radiation from the spectral range of

Secondary radiation. The secondary radiation points in

present context particularly preferred one

lower-energy radiation than the primary radiation. The spectral range of the secondary radiation is thus unequal to the spectral range of the primary radiation.

The conversion element may for example be in the form of a layer, wherein the geometric dimensions with respect to vertical and horizontal extent

can assume different proportions. A possible mechanical connection between the main surface of the radiation exit surface of the radiation-emitting

Semiconductor chips and the conversion element can

be formed for example by a connecting element. In this case, the thickness of the connecting means is in particular designed such that the vertical extent of the

Lanyard is smaller than the vertical extent of the conversion element and / or the radiation-emitting semiconductor chip. Such a connection element can

For example, be a translucent, transparent or transparent plastic. In particular, come

Silicones and epoxides as connecting agents in question. Further conceivable are versions in which the

Conversion element is arranged spaced from the radiation-emitting semiconductor chip. "Spaced" in the present context means that the conversion element is arranged in such a way to the radiation-emitting semiconductor chip, that the primary radiation must first overcome a gap in order to reach the conversion element. For example, the conversion element at least partially a

Form the cover of the radiation-emitting device, whereas the radiation-emitting semiconductor chip on a cover surface facing the bottom of the

radiation-emitting component is located. The gap may be air-permeable or other radiation-transmissive,

be filled clear or transparent material.

According to at least one embodiment of the

radiation-emitting component comprises this at least one filter element, the conversion element and the

radiation-emitting semiconductor chip is arranged downstream such that primary radiation and secondary radiation the

Leave radiation-emitting component exclusively through the filter element, wherein the filter element a majority of entering the filter element

Primary radiation at the passage and thus prevents the exit from the device.

"To prevent passage" means in the present

Related that the filter element on the on the

Filter element meeting primary radiation absorbing, reflective, scattering or converting, as another conversion element, can act. This prevents that

Filter element a majority of the through the converter element unconverted primary radiation at the exit from the

Radiation-emitting component. That is, the

Primary radiation reaches the radiation exit surface of the radiation emitting semiconductor chip facing away from

Filter element not. "Majority" in the present context means that at least 50%, preferably at least 75%, more preferably 90% of the not by the

Converter element converted primary radiation is blocked by the filter element. This means that particularly preferably at least 90%, in particular 99%, by the

Conversion element unconverted primary radiation is prevented by the filter element at the passage.

The secondary radiation passes through the filter element at least for the most part and passes through the radiation exit surface of the filter element and / or is at the for

Radiation exit surface facing away from the bottom of the

Reflected filter element. The filter element is arranged geometrically such that the primary radiation and the secondary radiation the

Radiation-emitting device can leave only through the filter element. The filter element is thus arranged downstream of the semiconductor chip and the conversion element. For example, an outer surface of the filter element facing away from the semiconductor chip is the only one

 For example, the filter element may at least partially be part of a cover of the radiation-emitting component, wherein within the radiation-emitting component, the conversion element and the radiation-emitting

Semiconductor chip are located. The geometric arrangement of Conversion element and radiation-emitting semiconductor chip may be formed as described above.

As a result of the above-described mode of operation of the filter element, predominantly, preferably exclusively secondary radiation can leave the radiation-emitting component.

Further, the filter element may contain a Ce ³⁺ -doped phosphor. For example, the filter element may include a YAG: Ce ³⁺ or a LuAG: Ce ³⁺ , which may also include other rare earths.

According to at least one embodiment of the

radiation-emitting component comprises the

Radiation-emitting device at least one

radiation-emitting semiconductor chip with a

Radiation exit surface, the at least one side surface and a main surface of the radiation-emitting

Semiconductor chips comprises, at least one conversion element, which is arranged downstream of the radiation-emitting semiconductor chip, such that a large part of a

radiation-emitting semiconductor chip in operation emitted Primärstrählung occurs in the conversion element, wherein a majority of the occurred in the conversion element

Primary radiation is absorbed in the conversion element and the conversion element emits secondary radiation, and at least one filter element, the conversion element and the

radiation-emitting semiconductor chip is arranged downstream such that primary radiation and secondary radiation the

Leave radiation-emitting device exclusively through the filter element, wherein the filter element a majority of entering the filter element

Prevents primary radiation from passing through. In the case of the present radiation-emitting semiconductor chip, it is possible in particular, on the basis of a downstream filter element, to be particularly efficient and cost-effective

produce pure color radiation.

According to at least one embodiment of the

radiation-emitting component comprises this at least one reflection element, wherein the reflection element comprises a reflective inner wall surface of a housing.

 The reflection element may in particular be formed as a separate layer on the inner wall surface. For example, the reflection element may be formed in particular as a reflective film and / or reflective thin film. Furthermore, the inner wall surface of the housing with a

coated and / or sprayed reflective material. The forming layer acts in particular as

Reflection element. According to at least one embodiment, the reflective inner wall surface of the housing surrounds the latter

radiation-emitting semiconductor chip in the lateral direction completely and the radiation-emitting semiconductor chip is arranged in the housing. In other words, that is

radiation-emitting semiconductor chip disposed on a bottom surface of a recess, wherein the radiation-emitting semiconductor chip may be surrounded by reflective inner wall surfaces and / or side wall surfaces in the lateral direction. In particular, the primary radiation of the radiation-emitting semiconductor chip generated in operation can impinge directly on the reflective inner wall surfaces and be reflected in particular in the direction of the recess. According to at least one embodiment of the

Radiation-emitting device comprises this one

Cover which closes the housing, wherein the cover comprises the filter element. The cover closes

in particular flush with the inner wall surfaces or side wall surface of the recess, so that the primary and secondary radiation located within the housing the

Leave radiation-emitting device exclusively through the filter element. In other words, forms the cover, which acts as a filter element, with the

Recess a completed cavity, in particular, the converter element and the

Radiation-emitting semiconductor chip can be located.

According to at least one embodiment of the

 Radiation-emitting device comprises this at least two radiation-emitting semiconductor chip and a single conversion element, wherein the conversion element to the

radiation-emitting semiconductor chip spaced apart centrally in an intermediate cover of the housing is arranged such that the primary radiation can leave the housing exclusively through the conversion element, wherein the

Cover of the housing to the intermediate cover is spaced. By way of example, the radiation-emitting component has a multiplicity of radiation-emitting semiconductor chips which are distributed uniformly on the bottom surface of the recess. That is, the radiation-emitting

Semiconductor chips have an equal distance from one another and from the inner wall surfaces of the housing. The generated during operation primary radiation applies exclusively to the

Intermediate cover, the bottom surface, the only one

Conversion element and / or the reflective

Inner wall surface of the housing. The single conversion element is arranged centrally in the intermediate cover. Under "middle in the

Intermediate cover arranged "understood in the present context that the only conversion element in

Unlike the cover, not the intermediate cover

completely trains. That means that the only one

Conversion element such in the intermediate cover

is formed, that the single conversion element has a distance to all laterally formed reflective inner wall surfaces.

The conversion element is surrounded on its sides by a material of the intermediate cover, which does not comprise a conversion element. The intermediate cover may be designed to be reflective, in particular for the primary radiation and secondary radiation, on the side facing the radiation-emitting semiconductor chip. In other words, the

Radiation-emitting semiconductor chip are located in a light box, which is formed on its surfaces surrounding the semiconductor chip reflective. Furthermore, the radiation generated in operation, one through the intermediate cover

formed further cavity only by the single

Conversion element in the direction of the cover, which is the

Filter element includes, leave. The cover and the

In particular, intermediate cover are not in direct

Contact and are spaced by the reflective inner wall surface of the housing to each other, wherein the lateral

Extension of the intermediate cover in particular by the

Inner wall surfaces of the recess may be specified.

According to at least one embodiment of the

Radiation-emitting device comprises this at least a reflection element that the radiation-emitting

Semiconductor chip at least partially surrounds in the lateral direction. The reflection element reflects the impinging

Primary radiation, without a wavelength change or

Effect frequency change.

 "Reflected" in the present context means that the reflection element reflects the primary radiation impinging on it at least 80%, preferably more than 90%.

"At least in places" means in the present

Context that the reflection element completely surrounds the side surface of the radiation-emitting semiconductor chip in the lateral direction up to a certain height, and

in particular over the main surface of the

 Radiation exit surface of the radiation-emitting

Semiconductor chips can protrude in the vertical direction. The reflection element can with the radiation-emitting

Semiconductor chip are in direct contact and be formed in the manner of a frame, which is spaced in particular to the side surface of the semiconductor chip.

The reflection element may take the form of a layer, a

Envelope or a housing may be formed, wherein the reflection element comprises at least one reflective material or the reflection element consists of a reflective material. According to at least one embodiment of the

radiation-emitting component forms the filter element another conversion element, wherein a majority of the occurred in the further conversion element primary radiation absorbed in the further conversion element and the further conversion element emits further secondary radiation of the same color as the secondary radiation or the further secondary radiation of the secondary radiation spectrally closer than the primary radiation of the secondary radiation.

By the filter element thus a conversion of the proportion of the primary radiation, which was not converted by the conversion element. "Major part" in the present context means that at least 50%, preferably at least 75%, particularly preferably 90%, of the further

Conversion element absorbed primary radiation is converted into further secondary radiation and through the

Radiation exit surface of the further conversion element leaves the radiation-emitting device. The primary radiation converted by the further conversion element has the same color as the secondary radiation. In other words, the human observer does not recognize any difference between the colors of the secondary radiation and the further secondary radiation.

Deviating from this, it is also possible that the color of the secondary radiation from the color of the secondary radiation is not the same by the further conversion element. However, particularly preferably the further secondary radiation from the further conversion element is spectrally closer to

Secondary radiation as to the primary radiation. For example, the conversion element converts 90% to 99% of the blue light (primary radiation) into red light (secondary radiation). In the further conversion element, ie the filter element, the remaining 1% to 10%, for example, in yellow light (further secondary radiation by further

Conversion element). There yellow and red light spectrally closer to each other than blue light and red light, the color saturation becomes higher even if the

Filter element does not emit red light. By the further conversion element, any existing proportion of primary radiation is converted. This overall good use of the primary radiation and

particularly pure color of the radiation-emitting

Construction element generated. The radiation-emitting component thus emits light of a single color. Perhaps

existing traces of primary radiation are for the

human observer is no longer visible.

According to at least one embodiment of the

radiation-emitting component emits the

Radiation-emitting semiconductor chip in operation

Primary radiation, from the spectral range of blue light.

For example, the peak wavelengths of the primary radiation are in the range of 400 to 490 nm.

According to at least one embodiment of the

radiation-emitting component is the

Secondary radiation in the spectral range of visible light and has a different color than the primary radiation.

In other words, the primary radiation is through the

Conversion element particularly preferred in

converted low-energy secondary radiation, which has at least a wavelength greater than 490 nm and is in the visible range. In particular, the secondary radiation may be colored light,

especially to act green, orange or red light. In this case, the primary radiation is particularly preferred in

colorless secondary radiation is converted. The pure colors

Secondary radiation is particularly well suited for use in flashing or projection devices.

According to at least one embodiment of the

radiation-emitting component is the

Conversion element on the main surface of the

arranged radiation-emitting semiconductor chips and covers the main surface, wherein at least the side surface of the radiation-emitting semiconductor chip from the

Conversion element is. The conversion element completely covers the radiation-emitting semiconductor chips such that the downstream conversion element terminates flush with at least one side surface of the radiation-emitting semiconductor chip in a lateral direction. The exiting at the main surface of the semiconductor chip primary radiation thus passes directly into the

 Conversion element where most of the primary radiation is converted to secondary radiation.

By the side surface of the radiation exit surface of the radiation-emitting semiconductor chip primary radiation can escape without influence of the conversion element. That is, a small portion of the of the semiconductor chip

emitted primary radiation then no conversion

subject.

According to at least one embodiment of the

radiation-emitting component comprises the

Reflection element a reflective cladding that with a matrix material is formed, are introduced into the particles. The particles have a reflective or light-scattering effect. The matrix material comprises a radiation-transmissive, preferably transparent and / or transparent material. In particular, the matrix material has one of the following

Materials made of or consisting of a mixture of at least two of the following materials: a silicone, an epoxy, a polyurethane, an acrylate, a

Polycarbonate, a glass. In the matrix material, the particles are introduced, wherein the particles consist of at least one of the materials 1O2, BaSOzi, ZnO, Al _x Oy ^ ZrC> 2 or contain one of the materials mentioned. "Reflective" in the present context means that the envelope for the primary radiation and secondary radiation is at least 80%, preferably more than 90%, reflective.

According to at least one embodiment of the

Radiation-emitting device completely surrounds the reflective sheath in the lateral direction of the radiation-emitting semiconductor chip and completely covers the side surface, wherein the reflective sheath with the

Main surface flush or the main surface in

Direction from the radiation-emitting semiconductor chip to

Conversion element dominates.

The reflective envelope positively covers the side surface of the radiation-emitting semiconductor chip in the lateral direction and is in direct contact with at least one side surface. The emerging from the side surface

Primary radiation strikes the reflective envelope directly. The vertical extent of the reflective Enclosure may be chosen such that the enclosure is flush with the main surface of the semiconductor chip, wherein a further expansion in the vertical direction is possible and the reflective enclosure, for example with the

Connecting element or the conversion element flush

can conclude.

The reflective cladding may be present

Connection in particular by means of a jet process

be upset. It is also conceivable that the reflective envelope is applied by means of a molding process, selective deposition (for example plasma spray process), screen printing, sputtering or spraying.

The features according to which the reflective envelope is applied by means of a jet process, a molding process, selective deposition, screen printing, sputtering or spraying, are each objective features, since the application methods are directly in the radiation-emitting

Component are detectable.

According to at least one embodiment of the

 Radiation-emitting device completely surrounds the reflective element in the lateral direction of the conversion element and covers at least one side surface of the

Conversion element completely, wherein the reflective envelope with a the radiation-emitting

Semiconductor chip facing away from the top of the conversion element flush or the top in the direction of

Conversion element projects beyond the filter element.

The reflective cladding covered in this

Embodiment, the side surface of the conversion element in lateral direction positively and is in direct contact with the side surface of the conversion element. This means that the radiation occurring from the side surface of the conversion element strikes the reflective envelope directly. The vertical extent of the

reflective sheath may be chosen such that the sheath is flush with one of the radiation-emitting

Semiconductor chip facing away from the top of the conversion element, with a further expansion in vertical

Direction is conceivable. The reflective sheath may preferably additionally the side surface of the

cover radiation-emitting semiconductor chips, wherein the reflective envelope, the side surface of the

radiation-emitting semiconductor chips in a lateral direction positively surrounds and is in direct contact.

By "in direct contact" is meant in the

present context that the side surface of the

radiation-emitting semiconductor chips through the

reflective cladding is touched and forms a common interface with the cladding.

According to at least one embodiment of the

radiation-emitting component comprises the

Reflection element, a reflective inner wall surface of a housing, wherein the reflective inner wall surface completely surrounds the radiation-emitting semiconductor chip in the lateral direction and the radiation-emitting

Semiconductor chip is arranged in the housing.

The radiation-emitting component comprises, for example, a housing, in particular a reflective one

Having inner wall surface. The reflective surrounds Inner wall surface of the housing, the radiation-emitting semiconductor chip at least in the lateral direction completely and may be spaced from the radiation-emitting semiconductor chip. For example, the

radiation-emitting semiconductor chip arranged on a bottom surface of the housing and preferably has a distance to the reflective inner wall surface. It is possible that the bottom surface is also formed in the same manner as the side surfaces by the reflective inner wall surface.

According to at least one embodiment of the

Radiation-emitting device includes the

radiation-emitting device, a cover which closes the housing, wherein the cover comprises the filter element.

According to at least one embodiment of the

Radiation-emitting device includes the

radiation-emitting component, the housing having a cavity which is closed, for example, by a cover, wherein the cover is formed at least in places by the filter element. It is special

advantageous if the filter element as a continuous

Cover of the housing is provided. The cover of the radiation-emitting component may be formed in the form of a small plate, a foil and / or a plate. The cover is in direct contact with the side walls of the housing and closes flush with the

Upper edge of the side walls off. The radiation-emitting semiconductor chip and the conversion element and the

Reflection element are located in the cavity of the radiation-emitting device. According to at least one embodiment of the

 Radiation-emitting component, the cover comprises a potting, the exposed outer surfaces of the

Conversion element completely enveloped.

The cover comprises, for example, a potting, which at least partially fills the cavity and surrounds the exposed outer surfaces of the conversion element in a form-fitting manner. The potting stands with the outer surfaces of the

 Conversion element in direct contact. Particularly preferably, the encapsulation in particular forms an interface with the reflection element, which, for example, surrounds the side surface of the semiconductor chip in the lateral direction and terminates flush with the main surface of the semiconductor chip facing away from the bottom surface. Particularly preferably, the potting is designed such that the potting with the upper edges of the

Side surface flush. According to at least one embodiment of the

 Radiation-emitting component forms the filter element from a potting.

The cover described above, which is a potting

includes, may be formed in particular by the filter element. The outer surfaces of the conversion element are then completely enveloped by the filter element and are in direct contact with each other. The casting can be the

Fill the cavity of the radiation-emitting component.

According to at least one embodiment of the

radiation-emitting device leave the

Primary radiation and the secondary radiation of the Radiation-emitting device exclusively through the conversion element.

The conversion element is, for example, not in direct contact with the radiation-emitting semiconductor chip, but is spaced from the semiconductor chip and so

subordinate that the primary radiation and the

Secondary radiation can leave only the radiation-emitting device through the conversion element. For example, the conversion element is in one

Intermediate cover of the housing is arranged and forms

at least in places, the intermediate cover. In this case, the intermediate cover may be a further cover within the housing, which forms a cover within the cavity, but does not terminate the housing. That is, the radiation-emitting device

In particular, the intermediate cover and the housing may have the final cover. The intermediate cover is geometrically arranged such that the through the

generated radiation-emitting semiconductor chip

Primary radiation can be left only by the intermediate cover of the radiation-emitting device.

For example, the semiconductor chip is reflective

Surround walls having a single opening through which electromagnetic radiation can escape to the outside. In this opening, the conversion element is then arranged, so that exiting radiation must pass through the conversion element.

According to at least one embodiment of the

Radiation-emitting device comprises this at least two radiation-emitting semiconductor chips and a single conversion element.

The semiconductor chips are located on the bottom surface of the housing. The conversion element can in the

 Intermediate cover be arranged so that the primary radiation generated during operation of the two radiation-emitting semiconductor chips, the device can be left exclusively through the conversion element. The at least two radiation-emitting semiconductor chips can be identical in construction and emit primary radiation of the same color, for example.

The following is the one described here

radiation-emitting component based on

 Embodiments explained with accompanying figures and graphical applications presented to explain the operation of the radiation-emitting device. The schematic sectional views of Figures 1 to 6 show embodiments of a described here

Radiation-emitting device.

The graphs of Figures 7 and 8 illustrate in particular the operation of the filter element.

The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions in the figures

Elements shown with each other are not as

to scale. Rather, individual elements for better presentation and / or for better

Comprehensibility must be exaggerated. In the embodiment of a radiation-emitting component 1 shown in FIG

Radiation-emitting component 1, a housing 20 having a cavity 21, a radiation-emitting semiconductor chip 2, a conversion element 5, a filter element 9, a

Reflection element 8 and a radiation-transmissive element 7. The reflection element 8 may be in the form of a reflective envelope and / or at least one reflective

Be formed inside wall surface, wherein side surface 24 and a bottom surface 23 of the housing 20, the reflective

Inner wall surface may include. The housing 20 comprises in addition to the cavity 21, the bottom surface 23 and in the lateral direction to each other in spaced side surface 24, which has adjacent to the bottom surface 23 directed to the cavity inner wall surface 25 of the housing. The bottom surface 23 and side surface 24 of the housing 20 are formed by a radiopaque material, such as a plastic. The cover comprises the filter element 9, wherein the

Filter element 9, the cavity 21 of the housing 20 completely covered and with the upper edges of the side surface 24 of the

Housing 20 flush in the radiation exit direction.

The radiation-emitting semiconductor chip 2 is on the

Bottom surface 24 of the housing 20 is positioned and has the side surface in the lateral direction L at a distance from the side surface 24 of the housing 20. The

Radiation exit surface of the radiation-emitting

Semiconductor chip 2 has at least one main surface 3 and one side surface 4. The radiation-emitting semiconductor chip 2 is located centrally on the bottom surface 23 of the housing 20 and is in direct contact with the main surface 3 of the semiconductor chip 2 facing away from the radiation exit surface.

The radiation-emitting semiconductor chip 2 emits in the embodiment of Figure 1 preferably primary radiation from the spectral range of 400 to 490 nm (blue light) and is by means of a connecting element 6 with the bottom surface 23 of the housing 20 facing away from the main surface 3 with the

Conversion element 5 connected.

The conversion element 5 covers the main surface 3 of the

Radiation-emitting semiconductor chips 2 completely and terminates flush with the side surface 4 of the semiconductor chip 2.

The connecting element 6 is a

radiation-permeable material, which may preferably be formed by a silicone. Furthermore, that can

Connecting element 6 may be formed by an epoxy, which, however, is not as resistant to aging and heat-resistant as silicone in comparison. The connecting means 6 is transparent to radiation, transparent and / or clear and causes no wavelength change or frequency change to the primary radiation. The vertical extent of the

Connecting element 6 is small in comparison to the

vertical dimensions of the semiconductor chip 2 and

Conversion element 5. The connecting element 6 provides a mechanical connection between radiation-emitting

Semiconductor chip and conversion element ago.

The conversion element 5 faces the filter element 9 of the

Housing a distance. In other words that's it

Conversion element 5 in the vertical direction to the filter element 9 spaced, such that a gap is present, which must be overcome by the primary radiation first. In the exemplary embodiment of FIG. 1, the reflection element 8 comprises a reflective envelope which forms a

Matrix material includes, in the particle, for example, T1O2

Particles are introduced. This reflective envelope of embodiment 1 completely surrounds the radiation-emitting semiconductor chip 2 in the lateral direction L and thus completely covers the side face 4, the reflective envelope being in contact with the main face 3 of FIG

 Semi-conductor chips 2 flush terminates or the main surface 3 in the direction of the radiation-emitting semiconductor chip 2 to the conversion element 5 surmounted. "Projected" in the present context means that the reflection element does not interfere with the main surface 3 of the radiation-emitting

 Completes semiconductor chips and additionally at least partially covers the layer formed by the connecting means laterally and is in direct contact with this. That is, the primary radiation 30, which can exit through the side surface 4 of the radiation-emitting semiconductor chip 2, is formed by the reflection element 8 in the form of a

reflective envelope in turn reflected in the semiconductor chip 2. The radiation-transmissive element 7 is characterized by a

radiation-permeable envelope formed, which is the

Conversion element 5 completely surrounds and direct

Contact with the outer surfaces of the conversion element 5 stands. Furthermore, the radiation-transmissive element 7 is connected to the outer surfaces of the reflection element 8 and of the

Filter element 9 in direct contact and forms in each case an interface within the cavity 21. In other words, filter element 9, the radiation-transmissive element. 7 and reflection element 8 are arranged one after the other within the cavity and do not form any intermediate spaces.

For better decoupling of the secondary radiation 31 from the filter element 9 can emerge on the radiation

Outer surface of the filter element 9 in addition to a

Lenticular cover 22 may be provided, the one

Total reflection of the radiation within the filter element 9 reduced. This lenticular cover 22 may in particular comprise a radiation-permeable plastic or a glass and on the filter element 9, for example

glued or directly formed as part of the filter element 9. This lenticular cover can be optionally applied and is more pure for the production

Radiation not mandatory.

The embodiment according to the figure 2 has to

Embodiment of Figure 1 the difference that the reflection element 8 in addition to the radiation-emitting semiconductor chip 2, the conversion element 5 in lateral

Completely surrounds direction L and the side surface of the

Conversion element 5 completely covered, the

Reflection element 8 with a radiation emitting semiconductor chip 2 facing away from the top

Conversion element 5 is flush. That is, in the embodiment of Figure 2, the tops of the

Conversion element 5 and the reflection element 8 together form an interface to the radiation-transmissive element 7.

The exemplary embodiment according to FIG. 3 shows the same structure as in the case of the geometric arrangement

Embodiment 2. In contrast to the embodiment 2, the reflection element 8 comprises no reflective envelope, but only the

reflective inner wall surface 25 of the housing. The cavity 21 of the housing 20 is through the radiation-transmissive

Element 7, for example, a silicone, filled. In this case, the radiation-transmissive element 7 is in direct contact with the reflective inner wall surface 25 of the housing 20 and the outer surfaces of the radiation-emitting semiconductor chip 2, the connecting element 6 and the conversion element. 5

The embodiment of Figure 4 shows a

Radiation-emitting semiconductor device manufactured by

2, with the difference that the cover of the housing 20 does not comprise the filter element 9, but is arranged directly on the upper side of the conversion element 5 and terminates flush with the side surface 4 of the radiation-emitting semiconductor chip 2. The outer surface or cover of the radiation-emitting component is in

Embodiment 4 in particular formed by the top of the reflection element 8 and the filter element 9. The optionally formed lenticular cover 22 completely covers the cavity 21 of the housing 20 and covers the reflection element 8 and the filter element 9 at the

exposed outside surfaces.

In the embodiment of Figure 5, the geometric arrangement is equal to that of the embodiment of Figure 1, with the difference that the cover of the housing 20 does not include the filter element 9, but a casting. Of the

Potting encases the exposed exterior surfaces of the

Conversion element completely and replaces that

radiation-transmissive element 7 of the embodiment FIG. 1. The filter element 9 designed as a potting closes in a form-locking manner with the upper side of the housing and completely fills the cavity 21 of the housing 20. in the

Embodiment of Figure 5, the filter element 9 optionally through the lens-shaped cover 22 as in

 Embodiment 1 are in direct contact, wherein the lens-shaped cover 22 may additionally include a filter element 9. In the exemplary embodiment of FIG. 6, the cavity 21 of the housing 20 comprises at least one radiation-emitting element

Semiconductor chip 2, in particular at least two

Radiation-emitting semiconductor chips 2, and a single conversion element 5. The radiation-emitting

Semiconductor chips 2 are not in the embodiment 6 in direct contact with the conversion element 5. Das

 Conversion element 5 is arranged centrally in an intermediate cover 26 of the housing 20 such that the primary radiation 30 can leave only the housing 20 through the conversion element 5 and the reflection element 8 the

Inner wall surface 25 of the housing 20 completely includes. In other words, the primary radiation 30 enters directly through all exposed surfaces of the conversion element 5 or is reflected on the reflective inner wall surface 25 of the housing 20. Particularly preferred is 90% of

 Absorbed primary radiation in the conversion element 5 and emitted as secondary radiation 31. The housing 20, as in the embodiment of Figure 1, final cover is formed by the filter element 9 and is for

Intermediate cover 26 of the housing 20 with the

Conversion element 5 spaced. The graphic plot, FIG. 7, uses a reflection spectrum to explain the mode of operation of a filter element based on LuAG: Ce, for example from the

Conversion material LuAG: Ce consists of or comprises this. As can be seen from the graphic plot, the

Primary radiation 30 at about 450 nm in particular absorbed, whereas the secondary radiation 31 from about 590 nm is not subject to absorption by the filter element. FIG. 8 uses a defined color range 33 in the CIE standard color chart to indicate the permitted range for use in a car linker (SAE J578 / ECE R6). It is explained that after absorption of the primary radiation 30 the

Secondary radiation 31 has the required color purity and falls into the color range 33. This means that the secondary radiation 31 obtained by conversion and filter element is preferably free from undesired color influences of the blue spectral range. The invention is not by the description based on the

Embodiments limited to these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly incorporated in the claims

 Claims or embodiments is given.

This patent application claims the priority of German Patent Application 102011118290.3, the disclosure of which is hereby incorporated by reference.

Claims

claims 1. radiation-emitting component (1) with  - At least one radiation-emitting semiconductor chip (2) having a radiation exit surface, the at least one  Side surface (4) and a main surface (3) of the comprises radiation-emitting semiconductor chips (2),  - At least one conversion element (5), the radiation-emitting semiconductor chip (2) is arranged downstream, such that a large part of the radiation-emitting Semiconductor chip (2) emitted in operation primary radiation (30) enters the conversion element (5), wherein a majority of the conversion element (5) occurred primary radiation (30) in the conversion element (5) is absorbed and the Conversion element (5) emitted secondary radiation (31), and - At least one filter element (9), the Conversion element (5) and the radiation-emitting Semiconductor chip (2) is arranged downstream such that Primary radiation (30) and secondary radiation (31) the Radiation-emitting device (1) leave exclusively through the filter element (9), wherein the Filter element (9) prevents a majority of entering the filter element (9) primary radiation (30) at the passage. 2. Radiation-emitting component (1) according to previous claim with  - At least one reflection element (8), wherein  - The reflection element (8) has a reflective Inner wall surface (25) of a housing (20), wherein the reflective inner wall surface (25) the radiation-emitting semiconductor chip (2) in lateral Completely surrounds the direction and the radiation-emitting semiconductor chip (2) in the housing (20) is arranged, - With a cover which closes the housing (20), wherein the cover comprises the filter element (9), and  - At least two radiation-emitting semiconductor chips (2) and a single conversion element (5), wherein the conversion element to the radiation-emitting  Semiconductor chip spaced centrally in an intermediate cover (26) of the housing (20) arranged such that the Primary radiation (30) can leave the housing (20) exclusively through the conversion element (5), wherein the cover of the housing (20) to the intermediate cover (26) is spaced. 3. Radiation-emitting component (1) according to one of the preceding claims, with at least one reflection element (8), which the radiation-emitting semiconductor chip (2) at least in places in a lateral direction. 4. Radiation-emitting component (1) according to one of the preceding claims, in which the filter element (9) forms a further conversion element, wherein a majority of the in the further  Conversion element occurred primary radiation (30) absorbed in the further conversion element and the other Conversion element further secondary radiation (32) of the the same color as the secondary radiation (31) emitted or the further secondary radiation (32) of the secondary radiation (31) spectrally closer than the primary radiation (30) of the Secondary radiation (31). 5. radiation-emitting component (1) according to one of the preceding claims, in which the radiation-emitting semiconductor chip (2) in Operation of primary radiation (30), emitted from the spectral range of blue light. 6. Radiation-emitting component (1) according to one of the preceding claims, in which the secondary radiation (31) is in the spectral range of visible light and has a different color than the primary radiation (30). 7. Radiation-emitting component (1) according to one of the preceding claims, in which the conversion element (5) is arranged on the main surface of the radiation-emitting semiconductor chip (2) and covers the main surface (3), wherein at least the Side surface (4) of the radiation-emitting semiconductor chip is free from the conversion element (5). 8. Radiation-emitting component (1) according to one of the preceding claims, in which the reflection element (8) is a reflective  Enclosed, which is formed with a matrix material in which particles are introduced. 9. radiation-emitting component (1) according to previous claim, in which the reflective cladding the radiation-emitting semiconductor chip (2) in lateral Completely surrounds the direction and the side surface (4) completely covered, wherein the reflective envelope with the main surface (3) is flush or the main surface (3) in the direction of the radiation-emitting semiconductor chip (2) to the conversion element (5) surmounted. 10. Radiation-emitting component (1) after the previous claim, in which the reflective covering completely surrounds the conversion element (5) in the lateral direction and completely surrounds at least one side face of the conversion element covered, wherein the reflective sheath facing away from the radiation-emitting semiconductor chip (2) Is flush top of the conversion element (5) or the top in the direction of the conversion element (5) to the filter element (9) surmounted. 11. Radiation-emitting component (1) according to one of the preceding claims, in which the reflection element (8) is a reflective Inner wall surface 25 of a housing (20), wherein the reflective inner wall surface 25, the radiation-emitting semiconductor chip (2) in the lateral direction completely surrounds and the radiation-emitting semiconductor chip (2) in the housing (20) is arranged. 12. Radiation-emitting component (1) according to the previous claim, with a cover closing off the housing (20), the cover comprising the filter element (9). 13. Radiation-emitting component (1) according to previous claim, wherein the cover comprises a potting completely enveloping exposed outer surfaces of the conversion element (5). 14. Radiation-emitting component (1) according to previous claim, in which the potting forms the filter element (9). 15. Radiation-emitting component (1) according to one of the preceding claims, wherein the primary radiation (30) and the secondary radiation (31) the radiation-emitting Leave component (1) exclusively through the conversion element (5). 16. Radiation-emitting component (1) according to the preceding claim, with at least two radiation-emitting semiconductor chips (2) and a single conversion element (5).