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WO2013067998A1 - Cellule solaire à plaque de semi-conducteur, mise en contact des deux côtés, sa face arrière ayant subi une passivation de surface - Google Patents

Cellule solaire à plaque de semi-conducteur, mise en contact des deux côtés, sa face arrière ayant subi une passivation de surface Download PDF

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Publication number
WO2013067998A1
WO2013067998A1 PCT/DE2012/100192 DE2012100192W WO2013067998A1 WO 2013067998 A1 WO2013067998 A1 WO 2013067998A1 DE 2012100192 W DE2012100192 W DE 2012100192W WO 2013067998 A1 WO2013067998 A1 WO 2013067998A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
solar cell
electrode structure
metal electrode
wafer solar
Prior art date
Application number
PCT/DE2012/100192
Other languages
German (de)
English (en)
Inventor
Maximilian Scherff
Max KÖNTOPP
Stefan Peters
Andreas Mohr
Andrey Stekolnikov
Matthias Hofmann
Original Assignee
Q-Cells Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Q-Cells Se filed Critical Q-Cells Se
Priority to CN201280054530.3A priority Critical patent/CN104145343B/zh
Publication of WO2013067998A1 publication Critical patent/WO2013067998A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a double-sided contacted semiconductor wafer solar cell with surface passivated back. Furthermore, the present invention relates to a solar module containing such semiconductor wafer solar cells.
  • the surface-passivated reverse side includes a semiconductor wafer made of a semiconductor material having a front side exposed to incident light and having a front side electrode structure and a rear side with a front surface
  • Rear surface which is surface-passivated by means of a dielectric passivation layer.
  • a sintered metal particle-comprising backside metal electrode structure is arranged on the passivation layer.
  • the backside metal electrode structure electrically contacts the semiconductor material of the semiconductor wafer via a plurality of local contact regions.
  • the contact regions are formed as openings of the passivation layer and occupy an overall electrical contact area of less than 5%, preferably less than 2%, of the backside surface.
  • Such a semiconductor wafer solar cell is also referred to as a passivated emitter and rear cell PERC cell. To produce the localized electrical contact areas of such a solar cell are different
  • LFC Laser Fired Contacts
  • a full-area passivation layer is first deposited, onto which the back-side metal electrode structure is subsequently applied by screen printing. After firing the electrode structure, electrical contact areas are formed in this layer package with the aid of a laser
  • the laser beam locally melts the material so that the backside metal electrode structure passes through the passivation layer into electrical contact with the semiconductor structure of the wafer.
  • Another possibility is to ablate it locally at defined locations by means of laser ablation after the full-area deposition of the passivation layer.
  • a passivation layer opened at defined locations is also possible by a wet-chemical process. This is the full-surface
  • Passivitations Mrs provided for example by means of an inkjet process with a mask having the defined openings. Subsequently, the passivation layer is removed wet-chemically through the openings, and at the end the applied masking layer is removed.
  • a solar cell on the rear side of the solar cell and the rear side of the back side polymeric encapsulating film are usually on
  • the solar cells, the encapsulant sheet, and the encapsulant are exposed to elevated pressure and temperature during a lamination process. It usually comes to a melting and crosslinking of the embedding material, so that this forms a stable composite with the backs of the semiconductor wafer solar cells.
  • the back metal electrode structures of semiconductor wafer solar cells produced by screen printing from metal-containing pastes regularly have a certain porosity due to their structure of sintered metal particles.
  • Backside electrode structures made by screen printing from metal pastes or by inkjet processes from metal particle containing inks, is not sufficient to a long-term stable composite of the semiconductor wafer solar cell with the rear solar module embedding material to
  • Embedding material on the surface of the metal structures are better than the internal mechanical stability of the metal structures. This provides, given the thermal mechanical stresses within the usual
  • the object of the present invention is therefore to provide a double-sided contacted semiconductor wafer solar cell with surface-passivated reverse side, which is suitable with an embedding material and a
  • the back-side metal electrode structure is less than 95% and more than 6%, 10%, 20% or 50%, preferably less than 75% and more than 6%, 10%, 20% or 50%, particularly preferably less than 50% and more than 6%, 10% or 20% or less than 25% and more than 6% or 10% of the back surface covered.
  • the backside metal electrode structure does not cover the entire backside side surface creates the possibility that during the lamination process the potting material may reach the uncovered areas of the backside surface. It has been found that the adhesion of the embedding material to the exposed passivation layer or the exposed semiconductor wafer is sufficiently long-term stable. Of the Construction of the solar cell according to the invention therefore enables the production of a tear-off solar module composite between
  • the semiconductor wafer may be a p-type or n-type substrate.
  • Semiconductor material is preferably silicon. At the local contact areas with the backside metal electrode structure, the silicon may be doped.
  • the passivation layer comprises at least one layer. she can
  • silicon nitride and / or silicon oxynitride have.
  • the semiconductor wafer solar cell has a non-solid surface
  • Rear metal electrode structure Moreover, the electrical contact between the backside metal electrode structure and the semiconductor wafer is performed only locally, i. H. only part of the backside metal electrode structure is in electrical contact with the semiconductor, and the remaining portion of the backside metal electrode structure is separated from the semiconductor wafer by the passivation layer.
  • the backside metal electrode structure does not extend over the entire surface over the backside surface, but covers only a portion of the backside surface, leaving areas without
  • Back metal electrode structure are present, which can come into direct contact with the embedding material during lamination. When the back surface is laminated with potting material, these areas cause sufficient adhesion of the entire potting material to the entire cell back surface. Areas where the potting material adheres to the backside metal electrode structure alternate with areas where the potting material is deposited on the passivation layer and / or the potting material
  • the front can be configured in various ways. For example, on the front side of the semiconductor wafer, a
  • Front side electrode structure may be arranged as conventional
  • Electrode finger structure with perpendicular to the extension direction of
  • Electrode finger extending busbars or solder pads is formed.
  • the backside metal electrode structure covers less than 95% and more than 6%, 10%, 20% or 50% of the back surface. If the
  • Rear side metal electrode structure covers more than 95% of the back surface, the semiconductor wafer solar cell does not provide sufficiently large
  • Backside metallization more than 6%, 10%, 20% or 50% of the
  • Rear surface must depend on the structural and functional properties of semiconductor wafer solar cells. Basically, the surface area resistance increases with the area fraction of the free areas on the backside metallization. The increase caused by the free areas should be less than 0.2 ohm-cm 2 . The better the surface conductivity of the paste, the more free areas can be provided without exceeding the above-mentioned threshold for the surface conductivity. For a bifacial cell needed for bifacial solar modules, the amount of backside metallization may be in the range of 6% or 10%. In addition, such a large proportion of free areas may be required if the adhesion between the semiconductor wafer and the encapsulant for the backside encapsulation layer is low.
  • the backside metal electrode structure covers less than 75% and more than 6%, 10%, 20% or 50% of the back surface. If the
  • Rear side metal electrode structure covered less than 75% of the back surface a structure is provided, which allows an even better anchoring of the embedding material on the back of the solar cell.
  • the proportion of backside metallization is more than 50% and less than 75%. With such a share will be both a satisfactory
  • the backside metal electrode structure covers less than 50% and more than 6%, 10%, or 20% of the back surface.
  • the backside metal electrode pattern covers less than 50% of the backside surface, the areas not covered by backside metal electrodes occupy more than 50% of the backside surface, thus ensuring a particularly secure long term stable encapsulation of these semiconductor wafer solar cells in the solar panel.
  • the backside metal electrode structure covers less than 25% and more than 6% or 10% of the back surface. If the
  • Back metal electrode structure covered less than 25% of the back surface, the adhesion of the embedding material on the
  • the passivation layer and / or the semiconductor material are exposed in free areas not covered by the backside metal electrode structure.
  • the backside metal electrode structure has cell connector contact portions. The exposure of the passivation layer and / or the semiconductor material in the free areas enables an embedding material to be used as the adhesive material for fastening the remindcostverkapselungsmaterials is laminated to the back of the semiconductor wafer solar cell, a direct contact with the
  • Ethylene vinyl acetate after the lamination show a sufficiently high and long-term stable adhesion to semiconductor surfaces and / or the
  • the proportion of area and the design of the outdoor areas may vary.
  • the design is influenced according to the cell structure used, by the required pitch of the local contact areas and the lateral current flow to cell connector contact sections.
  • the free areas do not overlap in optimized embodiments of the semiconductor wafer solar cell with the contact areas and the cell connector contact portions, which are used for contacting the semiconductor wafer solar cell with other semiconductor wafer solar cells for the production of a solar module.
  • Cell connector contact portions may be configured as ped or as a bus bar.
  • the free areas have a same shape.
  • the semiconductor wafer solar cell provides evenly shaped free areas which, viewed mechanically, cause uniform adhesion of the potting material over the area.
  • the free areas have the same size in addition to the same shape.
  • the fact that the free areas are the same size makes the semiconductor wafer solar cell over its entire
  • Back area provides a uniform structure of open spaces.
  • the semiconductor wafer solar cell provides a backside structure having a uniform adhesion to the attached to it
  • the free areas have a circular, star, line or wedge-shaped form.
  • Circular free areas represent areas without corners and edges, which thereby surround the area
  • Metal structure realized a particularly uniform adhesion of the embedding material on the back of the semiconductor wafer solar cell. Cuneiform
  • Free areas make it possible in a simple manner to produce structures in which the spatial extent of the free area points away from the cell connector contact sections, so that the structure of the backside metal electrode structure interrupted by the free areas is structured in such a way that it optimally matches the current flow in the
  • Rear side metal electrode structure is adjusted.
  • the free areas have a circular shape when less than 50% and more than 6%, 10%, or 20% of the back surface is covered by the back metal electrode structure.
  • the circular free areas may be homogenous, i. E. From the cell connector contact portions, in the same or different sizes. with constant proportion of the back surface, distributed over the back surface.
  • the free areas preferably have a linear shape when less than 95% and more than 6%, 10% or 20% of the backside surface is covered by the backside metal electrode structure.
  • the line-shaped free areas may be homogeneous, apart from the cell connector contact sections, in the same or different sizes, i. with constant proportion on the back surface over which
  • the free areas are preferably distributed on the rear side surface in such a way that the area fraction of the free areas compared with the area portion of the rear side metal electrode structure increases with increasing distance from the
  • the free areas are evenly distributed over more than 80% of the back surface, i. they take one
  • Back side encapsulating material is anchored uniformly over 80% of the back surface is sufficient for the required long-term stability adhesion between the back surface and
  • Rear side metal electrode structure has a layer thickness which decreases with increasing distance to the cell connector contact portions.
  • Metal structure in the direction of the cell connector contact portions is increasing the layer thickness of the metal structure another structural measure to the lateral resistance of the metal structure to the rising
  • Passivation layer arranged in a regular two-dimensional contact grid on the back surface, wherein the
  • Free areas are arranged distributed in intermediate areas of the contact grid. Thereby, the current flow out of the semiconductor wafer through the
  • the passivation layer is as
  • the thin-film stack has at least one passivation layer applied directly to the semiconductor material and at least one second layer, which may or may not also have passivation properties.
  • the thin-film stack as the top
  • the topmost layer is the layer on which the backside metal electrode structure or on the lamination
  • Embedding material is arranged. When the primer layer is contacted with the potting material, a particularly good adhesion forms. Due to the contact of the embedding material with the uppermost layer of the passivation layer stack, sufficient adhesion of the
  • the passivation layer may be transparent. In this case, electricity can also be generated via the free areas by light incident on the rear side of the semiconductor solar cell.
  • the present invention likewise relates to a solar module which comprises at least one semiconductor wafer solar cell according to the invention.
  • the solar module includes a front side encapsulation layer, a plurality of semiconductor wafer solar cells interconnected electrically with each other, and one Reverse side encapsulation layer. Between the
  • Semiconductor wafer solar cells include an encapsulation material.
  • the semiconductor wafer solar cells according to the invention ensure a sufficiently tear-resistant module bond between the back-side encapsulation layer and the backside surfaces of the semiconductor wafer solar cells.
  • Ethylene vinyl acetate is suitable in particular as an embedding material.
  • Further examples of the encapsulant material are silicone rubber, polyvinyl butyral, polyurethane or polyacrylate.
  • the front side encapsulation layer may comprise, for example, glass.
  • Examples of the sudcountselungstik are, for example, a backsheet of TEDLAR ® (registered
  • FIG. 1 shows schematically the front side of a semiconductor wafer solar cell according to the invention in plan view
  • Fig. 2 shows schematically a part of the back surface of a
  • Fig. 3 shows schematically a part of the back surface of another
  • Fig. 4 shows schematically a part of the back surface of another
  • semiconductor wafer solar cell in plan view semiconductor wafer solar cell in plan view
  • Fig. 5 shows schematically a part of the back surface of another
  • Fig. 1 shows schematically the front side of an inventive
  • Semiconductor wafer solar cell 1 1 in plan view. On the front side 1 3 provided for the incidence of light is the semiconductor wafer processed to the solar cell visible, noticeable. On the front side 1 3 of the semiconductor wafer is a
  • Front side electrode structure 1 5 arranged.
  • Front side electrode structure 15 is formed as a typical electrode finger structure with two busbars 17 extending perpendicular to the extension direction of the electrode fingers.
  • the illustrated in Fig. 1 semiconductor wafer solar cell 1 1 has one of the variants shown in Figs. 2 to 5 for forming the back. Depending on the embodiment of its back corresponds to
  • FIG. 2 schematically shows a part of the rear side surface 28 of a semiconductor wafer solar cell 21 according to the invention in plan view.
  • the backside metal electrode structure 29 is shown in white.
  • the backside metal electrode structure 29 has cell connector contact sections 22, only one of which is shown here, which enables interconnection of the semiconductor wafer solar cell 21 with further semiconductor wafer solar cells, for example by means of contact strips to form a solar cell string for solar module construction.
  • the backside metal electrode structure 29 does not cover the entire back surface of the
  • the free areas 24 in this variant have a wedge-shaped shape and in each case the same size.
  • the tip of the wedge shape is oriented toward the cell connector contact portion 22 that is closest to the respective clearance area 24. Ie. , the free areas 24 are distributed on the rear side surface 28 in such a way that the surface portion of the free areas 24 compared to the area proportion of the
  • Rear side metal electrode structure 29 with increasing distance to the Cell connector contact portion 22 increases. This is realized not only by the wedge shape of the free areas 24, but additionally by the
  • a wedge-shaped free area 24 divides from a predetermined width into two wedge-shaped free areas 24, the tip of which is also oriented to the cell connector contact portion 22.
  • the lateral resistance of the backside metal electrode structure 29 decreases toward the cell connector contact portions 22, and the area ratio of the metal structure of FIG.
  • the return electrode increases the closer one gets to the cell-connector metal structure, which takes into account the increasing current intensity in the metal structure in this direction.
  • FIG. 3 schematically shows a part of the rear side surface 38 of a further semiconductor wafer solar cell 31 according to the invention in plan view.
  • the backside metal electrode structure 39 is visible as a white area.
  • the backside metal electrode structure 39 electrically contacts the semiconductor material of the semiconductor wafer via a multiplicity of local contact regions 36, wherein the contact regions 36 are formed as openings or openings of the passivation layer and occupy an overall electrical contact area of less than 5%.
  • These contact areas 36 have circular or oval-like diameter usually in the range of 25 to 70 ⁇ and are arranged in a grid of, for example, 400 to 800 ⁇ . Since this is not a schematic
  • Contact areas 36 are visible on the back side of the semiconductor wafer solar cell 31 only if they are realized after the backside metallization as laser fired contacts (LFC). If the contact regions 36 are introduced into the passivation layer before the backside metallization, for example by laser ablation or by a mask etching process, then the contact regions 36 are covered by the backside metal electrode structure 39 and thus not visible.
  • the backside metal electrode structure 39 is in this variant by periodically arranged, equal-sized, circular free areas 34
  • the contact areas 36 and the free areas 34 do not substantially overlap.
  • the free areas 34 are exposed such that the backside metal electrode structure 39 covers less than 95% and more than 6%, 10%, 20%, or 50% of the backside surface 38. Just like the contact areas 36, the free areas 34 are over the
  • Rear side surface 38 homogeneously distributed.
  • the homogeneous distribution of the free areas 34 allows a uniform anchoring of a
  • the passivation layer may be formed as a thin-film stack, the uppermost layer of which
  • FIG. 4 schematically shows a part of the rear side surface 48 of a further variant of the semiconductor wafer solar cell 41 according to the invention in plan view. On the back surface 48 is shown in white
  • Rear metal electrode structure 49 visible.
  • Backside metal electrode structure 49 are in turn solder pad-shaped
  • Enable semiconductor wafer solar cells for example by means of contact ribbon.
  • the backside metal electrode pattern 49 does not cover the whole area of the back surface passivated semiconductor wafer of the semiconductor wafer solar cell 41, but rather the passivation layer and / or the semiconductor material is not in
  • Back metal electrode structure 49 covered free areas 44 such that the back side metal electrode structure 49 less than 95% and more covered as 6%, 10%, 20% or 50% of the back.
  • the free areas 44a, 44b, 44c, 44d, 44d, and 44e which are referred to as free areas 44 when referred to as a unit, have a circular or oval shape.
  • the clearance areas 44a, 44b, 44c and 44d have a circular shape, while the clearance areas 44e have an oval shape.
  • the free areas 44 have a different size and are distributed on the rear side surface in such a way that the surface portion of the free areas 44 is compared with FIG. 3
  • the clearance areas 44a are smaller in size than the clearance areas 44b.
  • a wedge-shaped shape is formed, the tip of which is formed by the free area 44a, which points to the cell connector contact portion 42.
  • the free areas 44c have a smaller size than the free areas 44b, but are arranged such that a free area 44b together with two free areas 44c a
  • Free areas 44d have a larger size than the free areas 44c and are arranged such that a free area 44c together with two
  • Free areas 44d forms a wedge-shaped shape, the tip of which points to the cell connector contact portion 42, when the centers of the circular free areas 44c and 44d are thought to be interconnected.
  • the clearance areas 44e have a larger size than the clearance areas 44a, 44b, 44c and 44d and an oval shape.
  • the clearance areas 44e are arranged with respect to the clearance areas 44d such that some of the
  • Open areas 44d together with a free area 44e form a wedge-shaped figure in mind connecting the outer contours, whose
  • Tip is formed by the respective free area 44d. Ie. , the area of the clearance areas 44 increases with increasing distance from the cell connector contact portion 42. As a result, the lateral resistance of the Rear side metal electrode structure 49 in the direction of the cell connector contact portion 42 from, and the surface portion of the metal structure of
  • the return electrode increases the closer one gets to the cell connector metal structure, so that in this direction the current strength in the metal structure increases.
  • the contact regions 46 are shown schematically, which show the electrical contact between semiconductor material and
  • FIG. 5 schematically shows a part of the rear side surface 58 of a further variant of the semiconductor wafer solar cell 51 according to the invention in plan view.
  • the backside metal electrode structure 59 and pad-shaped cell connector contact portions 52 are shown in white.
  • the backside metal electrode pattern 59 does not cover the entire area of the back surface passivated semiconductor wafer of the semiconductor wafer solar cell 51, but rather the passivation layer and / or the surface
  • the rear-side metal electrode structure 59 has a tree-structure-like shape in this variant, so that the surface portion of the free areas 54 compared with the surface portion of the back-side metal electrode structure 59 increases with increasing distance to the
  • Cell connector contact portions 52 decreases.
  • the tree-like shape of the back surface electrode structure 59 is such that stem-like structures lead away from the cell connector contact portions 52, which branch out at a further distance from the contact portions 52. LIST OF REFERENCE NUMBERS

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Abstract

La présente invention concerne une cellule solaire à plaque de semi-conducteur (31), mise en contact des deux côtés, sa face arrière ayant subi une passivation de surface, comportant: une plaque de semi-conducteur qui est constituée d'un matériau semi-conducteur et qui est pourvue d'une face avant destinée à être exposée à la lumière, laquelle comporte une structure d'électrode de face avant, et d'une face arrière dont la surface (38) a subi une passivation de surface au moyen d'une couche de passivation diélectrique, sur laquelle est disposée une structure d'électrode métallique de face arrière (39) qui comprend des particules métalliques frittées, la structure d'électrode métallique de face arrière (39) étant mise en contact électrique avec le matériau semi-conducteur de ladite plaque de semi-conducteur par l'intermédiaire d'une pluralité de zones de contact (36) locales, les zones de contact (36) étant réalisées sous forme d'ouvertures dans ladite couche de passivation et formant ensemble une surface de contact électrique représentant moins de 5 %, de préférence moins de 2 %, de la surface (38) de la face arrière. Selon l'invention, la structure d'électrode métallique de face arrière (39) recouvre moins de 95 % et plus de 6 %, 10 %, 20 % ou de 50 %, de préférence moins de 75 % et plus de 6 %, 10 %, 20 % ou de 50 %, de préférence encore moins de 50 % et plus de 6 %, 10 % ou de 20 % ou moins de 25 % et plus de 6 % ou de 10 % de la surface (38) de la face arrière.
PCT/DE2012/100192 2011-11-08 2012-06-28 Cellule solaire à plaque de semi-conducteur, mise en contact des deux côtés, sa face arrière ayant subi une passivation de surface WO2013067998A1 (fr)

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CN201280054530.3A CN104145343B (zh) 2011-11-08 2012-06-28 具有表面钝化的背面的双面接触的半导体晶圆太阳能电池

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DE102011055143.3 2011-11-08
DE102011055143A DE102011055143A1 (de) 2011-11-08 2011-11-08 Beidseitig kontaktierte Halbleiterwafer-Solarzelle mit oberflächenpassivierter Rückseite

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EP2073275A2 (fr) * 2007-12-21 2009-06-24 Palo Alto Research Center Incorporated Structures de contact de métallisation et procédés de formation de structures d'électrode à plusieurs couches pour les cellules solaires en silicone
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JP2016122749A (ja) * 2014-12-25 2016-07-07 京セラ株式会社 太陽電池素子および太陽電池モジュール
WO2017215710A1 (fr) 2016-06-15 2017-12-21 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Composant semi-conducteur doté d'électrodes en faces avant et arrière et son procédé de fabrication
DE102016110965A1 (de) 2016-06-15 2017-12-21 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Halbleiter-Bauelement mit vorder- und rückseitiger Elektrode und Verfahren zu dessen Herstellung
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CN104145343A (zh) 2014-11-12
CN104145343B (zh) 2016-08-17

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