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WO2013067968A1 - Système de conversion photoélectrique à semi-conducteur - Google Patents

Système de conversion photoélectrique à semi-conducteur Download PDF

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Publication number
WO2013067968A1
WO2013067968A1 PCT/CN2012/084416 CN2012084416W WO2013067968A1 WO 2013067968 A1 WO2013067968 A1 WO 2013067968A1 CN 2012084416 W CN2012084416 W CN 2012084416W WO 2013067968 A1 WO2013067968 A1 WO 2013067968A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric
power conversion
photoelectric power
semiconductor
electro
Prior art date
Application number
PCT/CN2012/084416
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English (en)
Chinese (zh)
Inventor
郭磊
赵东晶
Original Assignee
Guo Lei
Zhao Dongjing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN2011103560054A external-priority patent/CN102496649A/zh
Application filed by Guo Lei, Zhao Dongjing filed Critical Guo Lei
Publication of WO2013067968A1 publication Critical patent/WO2013067968A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the field of power distribution technology and electronic components, and in particular to a semiconductor photoelectric power conversion system. Background technique
  • AC/AC transformers usually use an electromagnetic field as an energy transmission shield, and the electromagnetic induction principle is used to realize voltage transformation through coupling between different input and output coils; AC/DC converter transformer is performed.
  • the rectifier bridge circuit is realized by a diode;
  • the DC/DC transformer is realized by a converter composed of a power semiconductor device and a driving circuit, an inductor or a capacitor for energy storage;
  • DC/AC converter voltage is passed through the power semiconductor
  • the device is implemented with a driving circuit and a filter circuit.
  • the present invention is directed to solving at least some of the above technical problems or at least providing a useful commercial choice. Accordingly, it is an object of the present invention to provide a semiconductor optoelectronic power conversion system in which the structure of the package, voltage and power can be flexibly expanded.
  • a semiconductor photoelectric power conversion system includes: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to each other to realize voltage and/or power expansion,
  • the photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
  • the photoelectric power conversion module is a DC (direct current)-DC type photoelectric power conversion module, an AC (alternating current)-AC type photoelectric power conversion module, an AC-DC type photoelectric power conversion module or a DC. -AC type photoelectric energy conversion module.
  • the electro-optical conversion structure comprises a light emitting diode, a resonant light emitting diode, a laser diode, a quantum dot light emitting device or an organic light emitting device.
  • the photoelectric conversion structure comprises a semiconductor photovoltaic cell, a quantum dot photovoltaic cell or an organic material photovoltaic cell.
  • the isolation layer is an insulating material, and the electro-optic conversion structure and the electro-optic conversion structure are separated by an insulation property of the material itself; or
  • the isolation layer is a semiconductor material, and the electro-optical conversion structure and the isolation layer are separated from the isolation layer by a reverse bias PN junction structure.
  • the photoelectric power conversion module is a flat shape device, and the input end and the output end of the photoelectric power conversion module are diagonally distributed.
  • the semiconductor photoelectric power conversion system further includes: an adjustment module, wherein the adjustment module is connected to a total input end and a total output end of the plurality of photoelectric power conversion modules, and is configured to pass through a monitoring
  • the operating parameters of the total output are feedback, and the operating parameters of the total input are feedback-adjusted.
  • the refractive index of each layer of material on the light propagation path matches.
  • the photoelectric power conversion module further includes an optical trap for limiting light to the inside of the photoelectric power conversion module.
  • the system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
  • the photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
  • the system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode The insulation distance between them improves the insulation properties and prevents breakdown.
  • FIG. 1 is a schematic structural view of a semiconductor photoelectric power conversion system of the present invention
  • FIG. 2 is a schematic structural view of another semiconductor photoelectric power conversion system of the present invention.
  • FIG. 3 is a schematic diagram showing the working principle and side view of a DC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 4 is a schematic diagram showing the working principle and side view of an AC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 5 is a schematic diagram showing the working principle and side view of an AC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 6 is a schematic diagram showing the working principle and side view of a DC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • Figure ⁇ is a schematic structural view of a photoelectric power conversion module in a semiconductor photoelectric power conversion system according to an embodiment of the present invention
  • FIG. 8 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention.
  • FIG. 9 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention.
  • FIG. 10 is a schematic structural view of a semiconductor photoelectric power conversion system with an adjustment module of the present invention.
  • FIG 1 is a schematic diagram of the principle of the adjustment module of Figure 10;
  • FIG. 12 is a schematic diagram of the appearance of the photoelectric electrical energy conversion module of the present invention.
  • Figure 13 is a schematic diagram of a series connection of a plurality of photoelectric power conversion modules of the present invention.
  • Figure 14 is a schematic view showing the first series connection and the parallel connection of the plurality of photoelectric power conversion modules of the present invention.
  • Figure 15 is a schematic illustration of the output leads of a plurality of optoelectronic power conversion modules of the present invention. detailed description
  • first,” and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first,”, “second,” may include one or more of the features, either explicitly or implicitly.
  • “multiple,” means two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like are to be understood broadly, and may be either a fixed connection or a detachable connection, unless otherwise explicitly stated and defined. , or connected integrally; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • installation can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may include direct contact of the first and second features, and may include first and second features, unless otherwise explicitly defined and defined. It is not in direct contact but through additional features between them.
  • the first feature "above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature is below the second feature, ", below,” and “below,” including the first feature being directly above and above the second feature, or merely indicating that the first feature level is less than the second feature.
  • the traditional AC transformer uses the principle of electromagnetic induction.
  • the free electron oscillation in the conductor generates an electromagnetic field as energy transfer.
  • the energy is transmitted through the coupling between the primary and secondary turns, thereby realizing the AC voltage conversion.
  • the semiconductor photoelectric power conversion system of the present invention follows the principle of quantum mechanics, and generates photons through transitions of carriers in different energy levels in semiconductor materials, using photons as energy transmission shields, and then exciting them in another semiconductor material. Carriers are thus implemented to achieve voltage conversion. Therefore, the characteristics of the particle (photon) characteristic instead of the wave (electromagnetic wave) become a basic working principle in the DC transformer of the present invention due to the difference in the transmission energy shield.
  • the invention provides a semiconductor photoelectric power conversion system, comprising: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to realize voltage and/or power expansion,
  • the photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
  • the overall energy conversion efficiency of the semiconductor photoelectric power conversion system of the present invention is mainly determined by three factors: electro-optic energy conversion efficiency, photoelectric energy conversion efficiency, and optical energy loss. Due to the development of LED and photovoltaic cell technology, the electro-optical conversion efficiency and photoelectric conversion efficiency of advanced semiconductor devices have reached a very high level, such as AlGalnP material. The internal quantum efficiency of the prepared red LED is close to 100%, the internal quantum efficiency of the blue LED prepared by GaN material has also reached 80%, and the internal quantum efficiency of the II IV photovoltaic cell is also close to 100%, so the optical energy loss is It has become the main factor limiting the energy conversion efficiency of the DC transformer of the present invention.
  • Electro-optical conversion structure emits optical language and photoelectric conversion structure absorption Spectral matching between optical terms to reduce photon non-absorption loss and heat loss, refractive index matching of various materials on the light propagation path to reduce total reflection critical angle loss and Fresnel loss, light trap to reduce light leakage Energy loss.
  • the semiconductor photoelectric power conversion system of the present invention comprises: a substrate 1 and a plurality of photoelectric power conversion modules 2.
  • the substrate 1 is used for supporting and dissipating heat, and the material may be metal, ceramic or plastic, and preferably an aluminum alloy or copper having a small density and good thermal conductivity.
  • a plurality of photoelectric power conversion modules 1 are fixedly arranged on the substrate 1. The output voltage and power of the single photoelectric power conversion module 1 are fixed, and the plurality of photoelectric power conversion modules 1 realize different output inputs through flexible connection. Voltage ratio and power expansion.
  • the semiconductor photoelectric power conversion system of the present invention may also be composed of a plurality of substrates 1 and a plurality of photoelectric power conversion modules 1, and the plurality of substrates are arranged in a stack, which can accommodate more in a limited space.
  • the multi-photoelectric energy conversion module 2 realizes high power output of high voltage or large current.
  • the photoelectric energy conversion module 2 in the semiconductor photoelectric power conversion system of the present invention may have a DC-DC type electric energy conversion module (refer to FIG. 3), an AC-AC type electric energy conversion module (refer to FIG. 4), and an AC-DC type electric energy conversion module. (Refer to FIG. 5) and DC-AC type power conversion module (refer to FIG. 6).
  • the main difference between the four is that the connection between the electro-optical conversion structure and the photoelectric conversion structure is different, and those skilled in the art are actually applying. Flexible settings can be required.
  • the control switching elements K1 and K2 in Fig. 6 can be in various forms, such as a M0S tube, etc., which can be easily integrated on-chip.
  • the working state of the photoelectric conversion module of DC-AC power conversion shown in Fig. 6 is as follows: K1 and K2 are turned on in turn, so that the output turns in a positive half cycle and a negative half cycle, that is, an AC output is generated.
  • K1 and K2 are turned on in turn, so that the output turns in a positive half cycle and a negative half cycle, that is, an AC output is generated.
  • the following is an example of the photoelectric power conversion module of the most practical DC-DC power conversion function, and the basic structure of the photoelectric power conversion module of the invention is described in detail.
  • FIG 3) is a working principle diagram of a DC-DC type photoelectric power conversion module, in which an arrow indicates working light.
  • a DC voltage VI is input to each of the electro-optical conversion structures 21 at the input end to inject carrier-composited photons into the electro-optical conversion structure 21, and the photons are transmitted to the photoelectric conversion structure 22 to be excited in the photoelectric conversion structure 22 to generate different loads.
  • the carriers are separated by a built-in electric field, and a DC voltage V2 is outputted on each of the photoelectric conversion structures 11, thereby realizing energy transmission using the optical waves.
  • the electro-optic conversion structure 21 and the working light of the photoelectric conversion structure 22 should match.
  • the values of VI and V2 depend on the material property parameters of the electro-optical conversion structure 21 and the photoelectric conversion structure 11, such as material type, strain characteristics, forbidden band width, doping concentration, etc., Corresponding characteristic parameters The energy conversion efficiency is optimized.
  • the electro-optical conversion structure may be one, and the photoelectric conversion structure may be multiple; in another embodiment of the present invention, the electro-optic conversion structure may be multiple, and the photoelectric conversion structure may be one; In still another embodiment of the present invention, the electro-optical conversion structure and the semiconductor photoelectric conversion structure may each be plural.
  • Fig. 3(b) is a side view showing the structure of the DC-DC type photoelectric power conversion module, which corresponds to the side view of the photoelectric power conversion module 2 of Fig. 1 taken at A-A'.
  • the photoelectric power conversion module 2 further includes: an isolation layer 23, a plurality of series-connected electro-optic conversion structures 21 formed on the isolation layer 23, and a plurality of layers formed on the isolation layer 23.
  • a series of photoelectric conversion structures 22 are provided. specifically:
  • the electro-optical conversion structure 21 can be a light emitting diode (LED), a resonant light emitting diode (RC-LED) or a laser diode (LD), an organic light emitting device, or a quantum dot light emitting device.
  • LED light emitting diode
  • RC-LED resonant light emitting diode
  • LD laser diode
  • quantum dot light emitting device an organic light emitting device.
  • the electro-optical conversion structure 21 comprises an electro-optical conversion layer, which may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III arsenic-based or phosphorus-based compound semiconductor materials, and combinations thereof, organic light-emitting materials or quantum dot luminescent materials.
  • an electro-optical conversion layer which may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III
  • the photoelectric conversion structure 22 may be a semiconductor photovoltaic cell, a quantum dot photovoltaic cell, or an organic material photovoltaic cell having a single-sided extraction electrode structure with a back contact or a buried contact.
  • a photovoltaic cell having a single-sided extraction electrode structure with back contact or buried contact can avoid the influence of electrode shading on the light-receiving surface, so that the energy conversion efficiency is higher, and the light-receiving surface is more uniform and beautiful, which can reduce assembly difficulty and increase assembly density.
  • the photoelectric conversion structure 11 includes a photoelectric conversion layer, and the material thereof may be AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other III-V direct ban With semiconductor materials and combinations thereof, organic photovoltaic materials or quantum dot photovoltaic materials.
  • the isolation layer 23 is transparent to the working light emitted by the electro-optical conversion structure 21 for electrical isolation between the electro-optical conversion structure 21 and the photoelectric conversion structure 22.
  • the isolation principle may be isolated by using the insulating properties of the material itself, and may also be isolated by providing a reverse bias PN junction structure between the plurality of electro-optical conversion structures 21 and the plurality of photoelectric conversion structures 22.
  • the isolation layer 23 may be an insulating material such as A 1 2 0 3 , A1N, Si0 2 , MgO, Si 3 N 4 , BN, diamond, LiA10 2 , LiGa0 of a solid transparent insulating shield.
  • CS 2 or SF 6 Gaseous transparent insulation shields
  • the isolation layer 23 may be a semiconductor material, such as GaP, GaAs, InP, GaN, S i, Ge, GaSb, and other semiconductor materials transparent to the working light, by doping, implanting, etc. the isolation layer 23, A PN junction is formed between the plurality of electro-optical conversion structures 21 and the isolation layer 23, and between the plurality of photoelectric conversion structures 22 and 23, and then the PN junction is placed in a reverse bias state to inhibit the occurrence of the on-current, thereby achieving a plurality of Electrical isolation between the electro-optic conversion structure 21 and the plurality of photoelectric conversion structures 22.
  • a semiconductor material such as GaP, GaAs, InP, GaN, S i, Ge, GaSb, and other semiconductor materials transparent to the working light
  • the number of the photoelectric conversion structures 11 is proportional to the number of the electro-optical conversion structures 21 to realize the transformation, and the spectrum of the absorption spectrum of the photoelectric conversion structure 11 and the emission spectrum of the electro-optical conversion structure 21 are matched.
  • the so-called spectrum matching means that the light emitted by the electro-optical conversion structure 21 is matched with the light characteristic of the photoelectric conversion structure 22 to optimize the photoelectric conversion efficiency, so that the electro-optical-photoelectric energy conversion efficiency is high, and the photon energy loss during the conversion process is less. .
  • the emitted light of the electro-optic conversion structure 21 may be a monochromatic light corresponding to the maximum absorption efficiency of the photoelectric conversion structure 22, or may be a photovoltaic effect of other frequencies that enables the photoelectric conversion structure 22 to have a quantum efficiency greater than 1.
  • a specific frequency of light an optimized situation is that the photon energy emitted by the electro-optic conversion layer can ensure that photons can be absorbed by the photoelectric conversion layer, and no excess energy is lost as heat due to excessive photon energy.
  • the electro-optical conversion layer is identical to the forbidden band width of the active material of the photoelectric conversion layer, thereby ensuring light absorption without loss of residual photon energy.
  • the above-mentioned "monochromatic light” has a certain spectral width.
  • a red LED it has a spectral width of about 20 nm, and does not limit a specific frequency point. This is a well-known technique. Let me repeat.
  • FIG. 3 shows a case where a plurality of electro-optic conversion structures 21 and a plurality of photoelectric conversion structures 22 are located on both sides of the isolation layer 23, in other embodiments of the present invention, a plurality of electro-optic lights may be used.
  • the conversion structure 21 and the plurality of photoelectric conversion structures 11 are located on the same side of the isolation layer 23, and a reflective structure is disposed at the bottom of the isolation layer 23 to transmit the emitted light of the plurality of electro-optic conversion structures 21 to the plurality of photoelectric conversion structures 22 through the reflective structure.
  • the refractive indices of the materials of the respective layers on the light propagation path are matched.
  • the refractive indices of the electro-optical conversion structure 21, the isolation layer 23, and the photoelectric conversion structure 11 satisfy the matching conditions.
  • the so-called matching means that the refractive coefficients of the three are similar, or the refractive coefficients of the three layers gradually increase along the direction of propagation of the optical path, which can effectively avoid the phenomenon of total reflection at the interface of each layer during light propagation. A good photoelectric energy conversion efficiency is obtained.
  • the photoelectric power conversion module 2 may further include an optical trap for limiting the working light to the interior of the photoelectric power conversion module 2, in particular, the electro-optic conversion layer and the photoelectric conversion layer for realizing the energy conversion process. In the meantime, it prevents light energy loss caused by light leakage and improves energy conversion efficiency.
  • FIG. 7 is a schematic structural view of an optoelectronic power conversion module 2 in accordance with an embodiment of the present invention.
  • the photoelectric power conversion module 1 includes: a first electrode layer 100; an electro-optical conversion layer 102 formed on the first electrode layer 100; a second electrode layer 104 formed on the electro-optical conversion layer 102; and a second electrode layer formed on the second electrode layer a first isolation layer 106 over 104; a third electrode layer 108 formed over the first isolation layer 106; a photoelectric conversion layer 110 formed over the third electrode layer 108; and formed over the photoelectric conversion layer 110
  • the electro-optic conversion layer 102 is configured to convert the input direct current into light to emit a working light of a desired wavelength range.
  • the working light includes a combination of one or more wavelength bands from the ultraviolet light of 100 nm to the infrared light of 10 paintings, preferably a single frequency of light, such as 620 nm red light, 460 nm blue light, 380 nm purple light,
  • the electro-optical conversion layer is fabricated in a manner that facilitates the use of mature prior art.
  • the electro-optical conversion layer 102 can employ structures and materials having high quantum efficiency and high electro-optical conversion efficiency.
  • the electro-optical conversion layer of the laser structure may be an LED structure or a laser structure, and generally includes an active layer, a limiting layer, a current dispersion layer, a PN junction, etc., wherein the active layer may be a multiple quantum well structure, and the electro-optical conversion layer of the laser structure further includes a resonant cavity.
  • the LED structure includes a resonant LED structure.
  • the material selection of the electro-optic conversion layer 102 is based on the material's own characteristics (such as defect density, band structure, etc.) and the desired light wave characteristics (such as wavelength range), such as red-yellow AlGalnP, ultraviolet GaN and InGaN, blue.
  • the photoelectric conversion layer 110 is used to convert light into electricity to achieve voltage transformation.
  • Materials of the photoelectric conversion layer 110 include AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, InGaP, and other Group III-V direct-gap semiconductor materials and combinations thereof.
  • the electro-optical conversion layer 102 is generally selected from a direct band gap semiconductor material, and the band structure is matched with the band structure of the photoelectric conversion layer 110 such that the wavelength band of the working light emitted by the electro-optical conversion layer 102 and the photoelectric conversion layer 110 have the highest absorption efficiency. The bands are matched to achieve the highest lightwave energy conversion efficiency.
  • the first isolation layer 106, the second electrode layer 104 and the third electrode layer 108 are transparent to the working light emitted by the electro-optical conversion layer 102.
  • the forbidden band width of the second electrode layer 104, the first isolation layer 106, and the third electrode layer 108 is greater than the photon energy of the working light emitted by the electro-optical conversion layer 102 to prevent the second electrode layer 104, The absorption of the working light by the isolation 106 layer and the third electrode layer 108 improves the light wave conversion efficiency.
  • the material refractive index of the first isolation layer 106, the second electrode layer 104, and the third electrode layer 108 are matched with the material refractive index of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 to avoid full occurrence at the interface during light propagation. reflection.
  • the second electrode layer 104, the first isolation layer 106, and the third The material refractive index of the electrode layer 108 and the photoelectric conversion layer 110 is the same to avoid full emission at each interface when light is transmitted from the electro-optical conversion layer 102 to the photoelectric conversion layer 110; in a more preferred embodiment of the present invention, the second The material refractive index of the electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 is increased stepwise.
  • step increase is that the material refractive index of each of the layers is not less than the material refractive index of the previous layer, that is, the material refractive index of some of the layers may be the same as the previous one. , but the material refractive index of each layer
  • the overall trend is increasing; in a more preferred embodiment of the invention, the material refractive indices of the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 are gradually increased.
  • the entire light is generated. Reflecting to improve light transmission efficiency; on the other hand, causing light to be transmitted from the photoelectric conversion layer 110 toward the electro-optical conversion layer 102 (mainly including the third and fourth electrodes of the photoelectric conversion layer 110 and the light reflected by the second reflective layer) Full emission occurs to confine more light in the photoelectric conversion layer 110, thereby improving the efficiency of light conversion to electricity.
  • the present invention can also reduce total reflection by roughening or regular patterns such as photonic crystal structures at the interface of different material layers. Therefore, in a preferred embodiment of the present invention, at least one of the electro-optic conversion layer 102, the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 has a roughened surface or a photonic crystal structure. In order to increase the light transmittance, the total reflection of light is reduced.
  • the first isolation layer 106 is used to realize electrical isolation between the electro-optical conversion layer 102 and the photoelectric conversion layer 110, so that the input voltage and the output voltage do not affect each other, and are transparent to the working light, so that the light carrying the energy can be transmitted from the photoelectric conversion layer 102 to
  • the electro-optic conversion layer 110 realizes energy transfer and finally realizes voltage conversion.
  • the thickness of the first isolation layer 106 depends on the magnitude of the input and output voltage and the insulation requirement. The thicker the first isolation layer, the better the insulation effect, the higher the breakdown voltage that can withstand, but the greater the attenuation of light at the same time, Therefore, the thickness of the insulation layer is determined as follows: The thinner the better the insulation requirements are met.
  • the first spacer layer material 106 is preferably A 1 2 0 3, A1N, Si0 2, MgO, Si 3 N 4, BN, diamond, LiA10 2, LiGa0 2, semi-insulating in the embodiment of the present invention, One of GaAs, SiC or GaP, GaN, and combinations thereof, and rare earth oxide RE0 and combinations thereof.
  • the material of the second electrode layer 104 and the third electrode layer 108 may be heavily doped GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, or conductive transparent metal oxide material IT0 (indium tin oxide), Sn0 2 , ZnO And combinations thereof, etc.
  • the first reflective layer 101 is further included between the first electrode layer 100 and the electro-optic conversion layer 102
  • the second reflective layer 111 is further included between the fourth electrode layer 112 and the photoelectric conversion layer 110.
  • the first and second reflective layers confine the light back and forth between the electro-optic conversion layer 102 and the photoelectric conversion layer 110 to prevent light leakage and improve energy conversion efficiency of the light.
  • the material of the reflective layer needs to meet the requirements of high reflection efficiency of working light, stable material performance, low interface contact resistance, and good electrical conductivity.
  • One is a Bragg mirror structure, which realizes reflection by using a plurality of material layers having different refractive indices, for example, two materials having different refractive indexes (for example, GaAs and AlAs having a refractive index difference of 0.6) , Si with a refractive index difference of 2.2 and rare earth oxide RE0) are made into a multilayer structure to achieve reflection;
  • one is a metal total mirror structure, which can directly deposit a metal with high conductivity and thermal conductivity to achieve reflection, such as Ag, Au , Cu, Ni, Al, Sn, Co, W, combinations thereof, and the like.
  • the reflective layer Since the thickness of the back electrode layer (ie, the first electrode layer 100 and the fourth electrode layer 112) in contact with the reflective layer is thick, the reflective layer has a metal total reflection mirror structure and has a heat dissipation function, and the transformer interior can be The heat generated is conducted out.
  • the first electrode layer 100 and the fourth electrode layer 112 are used as the extraction electrodes for input and output currents. Since they are not required to be transparent to the working light, they can be formed by using metals, alloys, ceramics, glass, plastics, conductive oxides and the like. A single layer and/or a multilayer composite structure, of which a low resistivity metal such as Cu is preferred. Preferably, by adding metal electricity The thickness of the pole layer reduces the resistance and acts as a heat sink to dissipate heat.
  • the input threshold voltage and the output voltage of the photoelectric power conversion module 2 are determined by the material characteristic parameters of the photoelectric conversion layer and the electro-optical conversion layer, such as the forbidden band width, the doping concentration, etc., the corresponding characteristic parameters are adjusted. To achieve transformation. Further, the expected voltage transformation can be realized by adjusting the ratio of the number of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 according to actual needs, for example, as shown in FIG. 8, the photoelectric power conversion module 2 includes an electro-optical conversion. The layer 102 and the two photoelectric conversion layers 110A and 110B increase the transformation of the vertical structure with respect to the photoelectric power conversion module 2 including the same single electro-optical conversion layer and a single photoelectric conversion layer, so that the transformation ratio is larger.
  • the first electrode layer 100, the electro-optical conversion layer 102 formed over the first electrode layer 100, and the second electrode layer 104 formed over the electro-optical conversion layer 102 are used as one The electro-optic conversion structure; similarly, the third electrode layer 108, the photoelectric conversion layer 110 formed over the third electrode layer 108, and the fourth electrode layer 12 formed over the photoelectric conversion layer 110 as a photoelectric conversion structure .
  • the semiconductor DC photoelectric transformer may further include a plurality of layers of alternately stacked electro-optical conversion structures and photoelectric conversion structures in a vertical direction. An isolation layer is included between each adjacent electro-optical conversion structure and the photoelectric conversion structure to further increase the DC voltage transformation ratio.
  • the plurality of electro-optic conversion structures are connected in series with each other, and the structure of each of the electro-optic conversion structures (or each of the photoelectric conversion structures) may refer to the structures described in the above embodiments.
  • 9 is a schematic structural view of a semiconductor DC photoelectric transformer having two electro-optic conversion structures and one photoelectric conversion structure in a vertical direction, wherein the electro-optical conversion structure and the photoelectric conversion structure respectively include a first isolation layer 106 and a second isolation Layer 107.
  • the first electrode layer and the fourth electrode layer of each of the electro-optical conversion structures and the photoelectric conversion structure may not be selected from metal electrodes.
  • the same heavily doped semiconductor material GaAs, GaN, GaP, A lGa InP, A lGa I nN, A lGa lnAs , or conductive transparent metal oxide material I T0 , Sn0 2 is selected as the second and third electrode layers. ZnO, and combinations thereof, to facilitate light propagation.
  • the invention provides an optoelectronic power conversion module 2, which is provided with an electro-optical conversion layer at an input end of the photoelectric power conversion module 1, and converts direct current into light by using optical radiation generated by transitions between semiconductor electronic energy levels, and is set at the output end.
  • the photoelectric conversion layer converts light into electric energy output. Since the voltage of the input unit and the output unit unit depends on the characteristic parameters and the number of the electro-optical conversion layer and the photoelectric conversion layer material, the transformer can directly realize the DC voltage transformation.
  • the semiconductor photoelectric power conversion system further includes an adjustment module 3, which may be fixed on the substrate 1 or independently.
  • the adjustment module 3 is connected to the total input terminal (in) and the total output terminal (out) of the plurality of photoelectric power conversion modules 2, for monitoring the operating parameters of the total output terminal by feedback, and adjusting the operating parameters of the total input terminal to maintain the semiconductor photoelectric energy
  • the conversion system is regulated or regulated, or the photovoltaic power conversion module 1 is operated at an optimum state or at a specific operating point.
  • Figure 11 is a diagram showing the operation of the semiconductor photoelectric power conversion system shown in Figure 10. As shown in FIG.
  • the adjustment module 3 first detects the current and voltage values of the plurality of photoelectric conversion structures 22 at the output end, and then the micro-processing chip in the adjustment module 3 performs a calculation process on the detection value to obtain a corresponding instruction, and the control component inputs the input according to the instruction.
  • a plurality of electro-optical conversion structures 21 at the ends are regulated.
  • the adjustment component can be a power MOSFET, a JFET, a thyristor, a BJT, a variable resistor, or the like.
  • the optoelectronic power conversion module 2 is a flat type device, and its input end and output end are diagonally distributed. Specifically, as shown in FIG.
  • the photoelectric power conversion module 2 can be a flat rectangular sheet shape, and the input positive pole and the input negative pole are located on a diagonal line L 1 of the main body, and the output positive pole and the output negative pole are located in the main body.
  • the other diagonal is on L2.
  • the input positive and negative electrodes and the output positive and negative electrodes may also be disposed at positions close to the top surface and the bottom surface, respectively.
  • the photoelectric power conversion module 2 may also be a flat circular sheet shape, a flat rounded rectangular sheet shape, or the like.
  • Figure 12 (b) is a top plan view of the photoelectric power conversion module 2 shown in Figure 12 (a);
  • Figure 12 (c) is a bottom view of the photoelectric power conversion module 2 shown in Figure 12 (a).
  • the design of the flat type device increases the transmission area of the working light on the one hand, and facilitates the heat dissipation of the integrated semiconductor photoelectric power conversion system on the other hand; the leads of the input end and the output end are diagonally distributed. , it is beneficial to the straight connection between the modules, the wiring is clear, the inductance generated by the line is less disturbed, and the insulation distance between the electrodes inside the module is long, and the insulation characteristics are better.
  • a plurality of photoelectric power conversion modules 2 may be sequentially connected in series as shown in Fig. 13.
  • a plurality of photoelectric power conversion modules 2 are alternately arranged face up and back up, and can be sequentially connected by short, non-intersecting leads to reduce wire consumption and reduce electromagnetic interference.
  • a plurality of photoelectric power conversion modules 2 are connected in series, and then thousands of series branches are connected in parallel.
  • the backflow prevention element D can also be connected in series on each of the series branches.
  • the anti-backflow component D when a series branch circuit fails, it can be regarded as a load because it has a certain resistance value.
  • the other series branch can be used as a power source, and the load can be loaded on the "load," Normal voltage output.
  • a semiconductor opto-electrical energy conversion system can form an isolated power supply or a non-isolated power supply by applying a common or non-common to the input and output terminals.
  • the isolated power supply is difficult to implement; and the semiconductor photoelectric power conversion system of the present invention is easy to implement due to its own characteristics.
  • the semiconductor photoelectric power conversion system is provided with a plurality of output terminal leads between the plurality of photoelectric power conversion modules 2, and outputs different output voltages, which are suitable for different types at the same time. The situation in which the operating voltage of the device is powered.
  • the system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
  • the photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
  • the system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode Insulation distance between High insulation properties, which can effectively prevent breakdown.
  • the description of the terms “one embodiment”, “some embodiments”, “example”, “specific example”, or “some examples” and the like means a specific feature described in connection with the embodiment or example.
  • a structure, material or feature is included in at least one embodiment or example of the invention.
  • the schematic representation of the above terms does not necessarily mean the same embodiment or example.
  • the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

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Abstract

La présente invention concerne un système de conversion photoélectrique à semi-conducteur, comprenant un substrat un de multiples modules convertisseurs photoélectriques. Lesdits modules convertisseurs photoélectriques branchés les uns aux autres en série et/ou en dérivation pour obtenir un effet d'amplification de la tension et/ou du courant. Ledit module convertisseur photoélectrique comprend en outre : une couche isolante qui est transparente pour l'énergie lumineuse utile pour le module convertisseur photoélectrique ; une ou plusieurs structures de conversion électro-optique formée(s) sur la couche isolante et mise(s) en œuvre pour convertir une énergie électrique d'entrée en énergie lumineuse utile destinée à être émise ; et une ou plusieurs structures de conversion photoélectrique formée(s) sur la couche isolante et mise(s) en œuvre pour convertir l'énergie lumineuse utile en courant de sortie. Le spectre d'absorption des structures de conversion photoélectrique et le spectre d'émission des structures de conversion électro-optique sont en coïncidence spectrale. Le système de l'invention présente les avantages d'une structure simple et de l'amplification adaptable de la tension et du courant.
PCT/CN2012/084416 2011-11-10 2012-11-09 Système de conversion photoélectrique à semi-conducteur WO2013067968A1 (fr)

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CN201110356005.4 2011-11-10
CN2011103560054A CN102496649A (zh) 2011-11-10 2011-11-10 一种半导体直流光电变压器
CN201210326705 2012-09-05
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CN201210395196.X 2012-10-17
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