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WO2012115603A1 - Convertisseur photovoltaïque multijonction et batterie solaire à base d'un tel convertisseur - Google Patents

Convertisseur photovoltaïque multijonction et batterie solaire à base d'un tel convertisseur Download PDF

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Publication number
WO2012115603A1
WO2012115603A1 PCT/UA2012/000015 UA2012000015W WO2012115603A1 WO 2012115603 A1 WO2012115603 A1 WO 2012115603A1 UA 2012000015 W UA2012000015 W UA 2012000015W WO 2012115603 A1 WO2012115603 A1 WO 2012115603A1
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WO
WIPO (PCT)
Prior art keywords
phvc
multijunction
semiconductor layer
semiconductor layers
contact electrodes
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PCT/UA2012/000015
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English (en)
Inventor
Oleksandr BEDJUKH
Original Assignee
Bedjukh Oleksandr
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Publication date
Application filed by Bedjukh Oleksandr filed Critical Bedjukh Oleksandr
Publication of WO2012115603A1 publication Critical patent/WO2012115603A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • This invention relates to the structure of multijunction semiconductor photovoltaic converters (hereinafter PhVC) and solar batteries based thereon. These devices are meant to use preferably in solar power stations.
  • PhVC multijunction semiconductor photovoltaic converters
  • a suitable mirror e.g., parabolic reflector according to the WO/2010/059873
  • mirror systems e.g., a set of conic mirrors according to the WO/2010/131164 and others
  • orientation of which is usually changeable during the daylight hours according to the Sun position on the horizon in order to concentrated solar light would be steadily directed onto the surface of the solar battery under optimal angle; or
  • PhVCs Probability of such failures can be reduced by placement of PhVCs onto heat- conductive supports having high heat transfer and high heat emission coefficients (see, for example, WO/2010/096700) and/or by use of more heat-resistant, but more expensive semiconductors (e.g. gallium arsenide).
  • Efficiency of photovoltaic cells and PhVCs can be increased usually by use of heterojunctions based on A'"B V (e.g., AIGaAs GaAs). Specifically, efficiency up-to-date 27.6% was achieved when such heterojunctions were irradiated by concentrated solar light having AM1.5 spectrum [see M.E. Green, K. Emery, D.L. King, S. Igary, W. Warta. Progr. Photovolt.: Res. Appl., 10, 355, 2002].
  • PhVCs of such kind were equipped with incorporated by MOS hydride epitaxy Bragg reflectors, e.g. in the form of 12 pairs of AIAs (72 nm)/GaAs (59 nm) layers. They are having 96% reflection factor and were adjusted for the 850 nm wavelength [see fig.3b and figure legend text in the above-mentioned research paper, and, additionally, V.M. Andreev, I.V. Kochnev, V.M. Lantratov, M.Z. Shvarts. Proc. 2 nd World Conf. on Photovolt. Solar Energy Conversion (Vienna, 1998) p.3537].
  • Bragg reflectors provide double pass of long-wave (i.e. infrared) solar radiation through the unijunction PhVCs and, hence, increase efficiency and radiation resistance of theirs.
  • Said tunnel junctions are required to decrease total electrical resistance of any known multijunction PhVC and its internal optical losses. Actually, without them the n-region of each preceding p-n junction would be connected directly to the p-region of each following p-n junction that causes formation of parasitic p-n-p structures and mutual compensation of photocurrents generated in adjacent photovoltaic cells.
  • any multijunction PhVC is able to operate within overall solar spectrum due to adjustment of separate photovoltaic cells to the different spectral sub-bands.
  • optical filters are often used in order to increase efficiency coefficient.
  • WO/2009/085601 discloses such multijunction PhVC, which includes semiconductor layers operating within the blue, green and red sub-bands of the solar spectrum respectively. Each said layer is equipped by adjacent dichroic filter. These filters decompose white light that impinges onto the external PhVC's surface, transmit radiation of specific spectral sub-bands of the solar spectrum into respective semiconductor layers and reflect inside them respectively blue, green and red light, which was not absorbed during first pass. Thereby blue light affects on the semiconductor layer adjusted for operation in the blue sub-band, etc. Also this PhVC can be adjusted for interference in order to increase absorption coefficient.
  • WO/2010/142626 discloses other structurally similar multijunction PhVC. It has two or three photovoltaic cells that are placed in series and equipped respectively with one or two optical filters able to reflect the light having wavelengths shorter than ⁇ ⁇ and to transmit the light having wavelengths longer than ⁇ ⁇ . According to applicant's opinion, it increases light absorption between said filters of adjacent photovoltaic cells and efficiency of such PhVC.
  • optical filters did not provide significant results because semiconductor layers of all above-mentioned multijunction PhVCs are connected electrically in series through aforesaid tunnel junctions.
  • a known planar semi-transparent preferably multijunction PhVC contains in one embodiment a substrate, first and second solid sheet-like electroconductive layers, and at least two semiconductor layers, which are placed between said electroconductive layers and interfaces of which are able to operate as p-n or n-p junctions. At least one said junction is meant for conversion of first solar spectrum sub-band energy into electric voltage and transmission of second solar spectrum sub-band to following junction meant for at least partial conversion of this second solar spectrum sub-band energy into electric voltage.
  • Band-gaps in two junctions can be different; moreover, junction having narrow band- gap must be located below the junction that has wide band-gap and is meant for partial absorption of other parts of the solar spectrum. Further, usually all layers must be flexible.
  • PhVC includes electrically independent multijunction photovoltaic cells, which have supporting substrates texturized for light back-scattering inside each photovoltaic cell and, when operate, are cut in an external electric circuit in parallel.
  • Said PhVCs can be glued together in multi-component modules having upper and/or bottom protective coatings (see fig.6 in both above-mentioned publications).
  • Known solar battery has at least one row, but usually many rows of said PhVCs, solid sheet-like electroconductive layers of which are partially exposed for parallel connection to an external electric circuit (see fig.2 in both above-mentioned publications). It is clear -
  • This invention is based on the problem to create more efficient multijunction photovoltaic converters and solar batteries based thereon by improvement of relative position and matching relative parameters of these photoelectric devices' components.
  • a multijunction PhVC according to the invention comprises of:
  • Additional feature consists in that in each arranged in series along the luminous flux group of the multijunction PhVCs details, namely: «first semiconductor layer (1 / ) - first transparent electric insulator (2/) - second semiconductor layer
  • all said insulators (2/) are single-layered, and refraction indexes of said semiconductor layers and said insulators are matched using antireflection criterion.
  • Selection of materials having required refraction indexes and determination of the insulators' thicknesses using antireflection criterion decrease additionally multireflection and scattering of light between semiconductor layers within the PhVC, even if insulators are single-layered.
  • At least one said insulator (2 / ) is composed of at least two electro-insulating layers on conditions that refraction index of at least one such electro-insulating layer is higher as compared with the refraction indexes of adjacent semiconductor layers, and refraction index of second such electro-insulating layer is lower as compared with the refraction indexes of adjacent semiconductor layers.
  • Shaping of at least one (but preferably each) of the built-in the multijunction PhVC insulator as at least two-layered structure and fulfillment of said conditions of selection of refraction indexes provide the truest conformability of any such PhVC to the principles of blooming of optical systems and permit to decrease up to technically feasible minimum multireflection and scattering of light between semiconductor layers within the PhVC.
  • the multijunction PhVC comprises of at least one antireflection surface dielectric faced to the light source when operates.
  • additional feature consists in that the multijunction PhVC is mounted on at least single-layered transparent dielectric substrate, under which a reflector is placed.
  • a reflector is placed.
  • Accurate selection of materials having required refraction indexes, amount of substrate layers and thickness of each layer permits to decrease multireflection and scatterings of light between said substrate and adjacent semiconductor layer, whereas the reflector provides double pass of residual solar radiation through the multijunction PhVC. Owing to efficiency of such PhVC and solar batteries based thereon increases additionally.
  • a solar battery according to the invention comprises of:
  • At least one multijunction PhVC comprising:
  • Additional feature consists in that all (+) and (-) discrete contact electrodes of identical polarity in each multijunction PhVC are arranged vertically one under another and shifted horizontally relative to the discrete contact electrodes of other polarity. This permits to decrease scattering of normally incident light by the contact electrodes of identical polarity and to exclude practically electrical breakdown between the opposite (+) and (-) discrete contact electrodes.
  • Fig.1 shows an elementary multijunction PhVC comprising two semiconductor layers separated by a transparent electric insulator and discrete contact electrodes placed on opposite sides of both semiconductor layers (cross section);
  • Fig.2 shows a transparent electric insulator from the Fig.1 composed of several placed in series dielectric layers (enlarged cross section);
  • Fig.3 shows an elementary multijunction PhVC comprising two semiconductor layers separated by transparent electric insulator and discrete contact electrodes placed on one side of each respective semiconductor layer (cross section);
  • Fig.4 shows a more complicated multilayered PhVC comprising three semiconductor layers separated by transparent electric insulators; discrete contact electrodes, placed on opposite sides of each semiconductor layer; an external antireflection coating; a transparent dielectric substrate; and a reflector (cross section);
  • Fig.5 shows more complicated multilayered PhVC comprising three semiconductor layers separated by transparent electric insulators; discrete contact electrodes, placed on one side of each respective semiconductor layer, an external antireflection coating; a transparent dielectric substrate; and a reflector (cross section);
  • Fig.6 shows an elementary solar battery based on single strip-shaped multijunction PhVC comprising two semiconductor layers (top view);
  • Fig.7 shows the same as Fig.6 (cross section by the vertical plane A-A);
  • Fig.8 shows the same as Fig.6 (cross section by the vertical plane B-B);
  • Fig.9 shows a solar battery based on three strip-shaped multijunction PVCs, each of which comprises of three semiconductor layers (top view);
  • Fig.10 shows the same as Fig.9 (cross section by the vertical plane A-A);
  • Fig.1 1 shows the same as Fig.9 (cross section by the vertical plane B-B);
  • Fig.12 shows a solar battery based on twelve multijunction PhVCs (top view).
  • Each elementary multijunction PhVC (see Figs 1 and 3) comprises of:
  • each such layer comprises of single p-n or n-p junction
  • a transparent electric insulator 2 t placed between of said adjacent semiconductor layers 1 f and 1 2 ;
  • More complicated multijunction PhVC (see Figs 4 and 5) comprises of:
  • each such layer comprises of single p-n or n-p junction;
  • Transparent electric insulators 2, and 2 2 placed between said semiconductor layers 1 ,, 1 2 , 1 3 ;
  • (+) and (-) discrete contact electrodes 3 are connected to the respective p- and n- regions of each said semiconductor layer.
  • Each multijunction PhVC (see Figs 4 and 5, 7 and 8, 10 and 11 ) can be equipped additionally with at least single-layered antireflection surface coating 4, a dielectric substrate 5 and a reflector 6 placed under said substrate 5.
  • Said contact electrodes 3 can be placed either on the both sides (see Figs 1 and 4), or on one side (see Figs 3 and 5) of each semiconductor layer 1 ( , where " " is serial number of the respective semiconductor layer along the luminous flux.
  • actual number "f ' of the semiconductor layers 1/ having built-in p-n or n-p junctions can be equal to two, three, four, etc. (while no more than three such layers are shown on Figs 4, 5, 10 and 11 for the sake of simplification).
  • number of the transparent electric insulators 2;, where «/» is serial number of the respective insulator can be more than one.
  • At least one transparent electric insulator 2 comprises of at least two transparent dielectric layers, but is more preferable, if each such insulator 2, ⁇ comprises of a set of transparent dielectric layers that is sufficient for the most effective optical matching of adjacent transparent PhVC's components.
  • Fig.2 shows enlarged view of first multi- layered transparent insulator 2, composed of "r" placed sequentially transparent dielectric layers 2 administrat, ...2 V , ...2 1r .
  • multireflection and scattering of light between semiconductor layers within any multijunction PhVC will be the less the less is difference of refraction indexes of each insulator 2 / and adjacent semiconductor layers 1/.
  • the semiconductor layers 1 / of some multijunction PhVC have produced from silicon having refraction index 3.5, it is desirable to produce the insulators 2 ; from rutile (Ti0 2 ) having refraction index 2.6. Difference of refraction indexes in about 25% provides only 2% reflection of normal incident light from the said layers' interface.
  • multi-layered transparent electric insulators 2 their materials must be selected on conditions that refraction index of at least one of such dielectric layer is higher than refraction indexes of adjacent semiconductor layers 1 / (in particular, ferroelectric materials such as PbTi0 3 , BaTi0 3 , SrTi0 3 etc. can be used thereto), and that refraction index of at least one other dielectric layer is lower than refraction indexes of adjacent semiconductor layers 1 / .
  • An elementary solar battery may comprise only one, in particular, strip-shaped multijunction PhVC 7, and two (+) and (-) current collectors 8 and 9 placed on both sides of the strip and meant for cut in an external electric circuit when the battery operates.
  • More complicated solar batteries may be composed either of several (for example, 5 three) strip-shaped multijunction PhVCs 7 (Fig.9), or of arbitrary amount of a single sheet- shaped multijunction PhVCs 7 (Fig.12) equipped with several current collectors 8 and 9.
  • Each solar battery (see Figs 7 and 8, 10 and 11) has usually in addition:
  • a reflector 6 placed under the common substrate 5 (or under individual substrates 5).
  • said discrete contact electrodes 3 of the same (+) or (-) I S polarity being arranged vertically one under another and shifted horizontally relative to the discrete contact electrodes 3 of other polarity in each multijunction PhVC 7 entered into the solar battery composition.
  • Incident onto the PhVCs 7 surface solar light passes through the antireflection surface coating 4 and interacts sequentially with the semiconductor layers 1 / those are pre-adjusted usually to absorption of photons related to the determined sub-bands of the solar spectrum.
  • the reflector 6 provides return of residual light through the transparent dielectric substrate 5 into PhVCs 7 and double pass of this light through the semiconductor layers 1;.
  • Optical parameters matching of all dielectric and semiconductor layers as it is described in details above, provides suppression of multireflection and undesired scattering of light between said layers within each PhVC 7. Respectively, it increases substantially probability of charge 5 carriers' generation each semiconductor layer 1 / .
  • Any multijunction PhVCs according to the invention can be produced in large scale using various present technologies, including especially thermal-vacuum and/or ion-plasma deposition, any kinds of epitaxy, or any suitable combination of said processes, which are able to create dielectric and semiconductor layers having specified chemical composition and to provide thickness accuracy at level of several nanometers.
  • Proposed multijunction PhVCs and solar batteries based thereon are substantially more effective, easy-produced, and more use- and serviceable in comparison with known analogues.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un convertisseur photovoltaïque (PVC) multijonction comprenant au moins deux couches semiconductrices (1 i ) dans lesquelles sont intégrées des jonctions p-n ou n-p, avec "i" étant le nombre ordinal de la couche semiconductrice respective le long du flux lumineux; un isolant électrique transparent (2 i ) intégré entre lesdites couches semiconductrices et conçu pour leur mise en correspondance optique; ainsi qu'au moins 2f paires d'électrodes de contact discrètes (+) et (-), f étant le nombre de couches semiconductrices (1 i ) dans le PVC, lesdites électrodes (+) et (-) de chaque paire étant connectées respectivement aux régions p- et n- de chaque couche semiconductrice (1 i ). La batterie solaire comprend au moins un tel PVC multijonction et des collecteurs de courant.
PCT/UA2012/000015 2011-02-21 2012-02-20 Convertisseur photovoltaïque multijonction et batterie solaire à base d'un tel convertisseur WO2012115603A1 (fr)

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UA201102015 2011-02-21

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165688A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的四结级联的光伏电池
CN103165686A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池
CN103165749A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结级联光伏电池的制造方法
CN103165750A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池的制造方法
CN103199149A (zh) * 2013-02-28 2013-07-10 溧阳市生产力促进中心 一种具有减反射膜的四结级联的光伏电池的制造方法
WO2014152771A1 (fr) * 2013-03-14 2014-09-25 Semprius, Inc. Recepteurs solaires a efficacite elevee comprenant des cellules solaires empilees pour des elements photovoltaiques concentrateurs
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
US10416425B2 (en) 2009-02-09 2019-09-17 X-Celeprint Limited Concentrator-type photovoltaic (CPV) modules, receiver and sub-receivers and methods of forming same

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US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
RU2376679C1 (ru) * 2008-09-16 2009-12-20 Общество с ограниченной ответственностью "Технология Полупроводниковых Кристаллов" Полупроводниковый многопереходный солнечный элемент
RU2377695C1 (ru) * 2008-07-28 2009-12-27 Федеральное государственное унитарное предприятие "Всероссийский Электротехнический институт им. В.И. Ленина" (ФГУП ВЭИ) Полупроводниковый фотопреобразователь и способ его изготовления

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
RU2377695C1 (ru) * 2008-07-28 2009-12-27 Федеральное государственное унитарное предприятие "Всероссийский Электротехнический институт им. В.И. Ленина" (ФГУП ВЭИ) Полупроводниковый фотопреобразователь и способ его изготовления
RU2376679C1 (ru) * 2008-09-16 2009-12-20 Общество с ограниченной ответственностью "Технология Полупроводниковых Кристаллов" Полупроводниковый многопереходный солнечный элемент

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10416425B2 (en) 2009-02-09 2019-09-17 X-Celeprint Limited Concentrator-type photovoltaic (CPV) modules, receiver and sub-receivers and methods of forming same
CN103165688A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的四结级联的光伏电池
CN103165686A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池
CN103165749A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结级联光伏电池的制造方法
CN103165750A (zh) * 2013-02-28 2013-06-19 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池的制造方法
CN103199149A (zh) * 2013-02-28 2013-07-10 溧阳市生产力促进中心 一种具有减反射膜的四结级联的光伏电池的制造方法
CN103165688B (zh) * 2013-02-28 2015-05-13 溧阳市生产力促进中心 一种具有减反射膜的四结级联的光伏电池
CN103165750B (zh) * 2013-02-28 2015-07-15 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池的制造方法
CN103165749B (zh) * 2013-02-28 2015-07-15 溧阳市生产力促进中心 一种具有减反射膜的五结级联光伏电池的制造方法
WO2014152771A1 (fr) * 2013-03-14 2014-09-25 Semprius, Inc. Recepteurs solaires a efficacite elevee comprenant des cellules solaires empilees pour des elements photovoltaiques concentrateurs
CN105229795A (zh) * 2013-03-14 2016-01-06 森普留斯公司 用于聚光光伏的包含堆叠的太阳能电池的高效率太阳能接收器
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications

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