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WO2012038843A1 - Boîtier de circuit intégré à alimentation électrochimique - Google Patents

Boîtier de circuit intégré à alimentation électrochimique Download PDF

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Publication number
WO2012038843A1
WO2012038843A1 PCT/IB2011/053477 IB2011053477W WO2012038843A1 WO 2012038843 A1 WO2012038843 A1 WO 2012038843A1 IB 2011053477 W IB2011053477 W IB 2011053477W WO 2012038843 A1 WO2012038843 A1 WO 2012038843A1
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WO
WIPO (PCT)
Prior art keywords
integrated circuit
electrodes
circuit package
fluid circuit
package
Prior art date
Application number
PCT/IB2011/053477
Other languages
English (en)
Inventor
Thomas J. Brunschwiler
Bruno Michel
Patrick Ruch
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to CN201180045439.0A priority Critical patent/CN103119713B/zh
Priority to DE112011102577.7T priority patent/DE112011102577B4/de
Priority to JP2013528793A priority patent/JP5815034B2/ja
Priority to GB1305369.9A priority patent/GB2497246B/en
Publication of WO2012038843A1 publication Critical patent/WO2012038843A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49593—Battery in combination with a leadframe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/04—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
    • H01M8/04007—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids related to heat exchange
    • H01M8/04029—Heat exchange using liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/04—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
    • H01M8/04276—Arrangements for managing the electrolyte stream, e.g. heat exchange
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/10—Fuel cells with solid electrolytes
    • H01M8/1097—Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/18—Regenerative fuel cells, e.g. redox flow batteries or secondary fuel cells
    • H01M8/184—Regeneration by electrochemical means
    • H01M8/188—Regeneration by electrochemical means by recharging of redox couples containing fluids; Redox flow type batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Definitions

  • the invention relates to electrochemically powered integrated circuit packages, e.g., as provided in computer systems such as a datacenter.
  • it relates to an integrated circuit package powered via electrolyte solutions with soluble electroactive species, such as to supply power to integrated circuits of the package.
  • the invention further concerns a computer system equipped with such circuit packages and a method of operating the same.
  • Three-dimensional (3D) integration of ICs significantly reduces the wiring length by providing vertical pathways for signal and power transmission, as known.
  • the stacking approach is highly modular and enables the integration of dissimilar technologies in a single cube, and provides massive bandwidth improvement by stacking cache on processor units.
  • 3D integration requires higher power per unit area and connection pins.
  • Another issue is the high cooling demand per unit projected area.
  • Through- silicon vias (TSVs) are an important aspect of 3D integration; they provide vertical signal and power transmission but reduce the active silicon surface area and cause wiring congestions.
  • TSVs Through- silicon vias
  • the extent of vertical integration is severely limited by the accumulated power density such that more than two layers of stacked high-performance logic cannot be easily cooled nor can sufficient power be delivered.
  • Scalable solutions for cooling large numbers of stacked processors have been demonstrated. However, there remains the problem of a viable approach for the supply of electrical power. More generally, powering and cooling are two concerns associated with IC chips.
  • US20090092862 (“Integrated Self Contained Sensor Assembly”), that generally relates to methanol fuel cells with a porous proton-exchange membrane.
  • a self-contained sensor assembly including a hybrid power module, a transceiver and one or more sensors or detectors.
  • the hybrid power module of the sensor assembly includes a fuel cell and an electronic storage device that may be charged by the fuel cell.
  • the fuel cell membrane and the micro-fuel cell can be directly integrated into an electronic device;
  • Figure 2.9 a schematic diagram of an IC with an integrated micro fuel cell. This design shows the fuel being vaporized by waste heat a process that also serves to cool the integrated circuit.
  • the present invention provides an integrated circuit package, comprising: a layer structure with: electrodes arranged on a layer thereof; and integrated circuits in electrical connection with the electrodes, and one or more fluid circuit sections, each configured to receive at least one respective electrolyte solution with soluble electroactive species therein, and allow said solution to contact at least some of the electrodes, such as to supply power to the integrated circuits, in operation.
  • the said integrated circuit packaging may comprise one or more of the following features:
  • At least one of the one or more fluid circuit sections are designed in accordance with a respective electrolyte solution to substantially cool down the integrated circuits in operation;
  • At least one of the one or more fluid circuit sections is configured to allow a respective solution to flow along a layer of the layer structure
  • At least one of the one or more fluid circuit sections is configured to allow a respective solution to flow between two layers of the layer structure, the said two layers being preferably two layers of integrated circuits arranged as a 3D stack of layers of integrated circuits;
  • At least some of the electrodes are designed as spacers constraining layers of the layer structure; at least some of the electrodes are arranged on one side of a layer of the layer structure, along which side a solution is allowed to flow by the at least one of the one or more fluid circuit sections;
  • the electrodes are arranged on each of the said two layers between which an electrolyte solution of a respective one of the one or more fluid circuit sections is allowed to flow;
  • electrodes arranged on one side of one of the said two layers comprise both cathodes and anodes;
  • the layer structure comprises: a printed wiring board; a substrate interconnect; and an integrated circuit chip comprising at least some of the integrated circuits, and wherein at least some of the electrodes and at least one of the one or more fluid circuit sections are arranged on one side of one of: the printed wiring board; the substrate interconnect; or the integrated circuit chip;
  • the one or more fluid circuit sections is configured to receive a single electrolyte solution, and wherein the electrodes comprise selective cathodes and anodes, said one or more fluid circuit sections configured to allow the said single electrolyte solution to contact the selective cathodes and anodes, forming therewith a single flow redox system;
  • the one or more fluid circuit sections is configured to: receive two electrolyte solutions, and preferably comprises a membrane arranged to separate the two electrolyte solutions in the one or more fluid circuit sections, and allow the two electrolyte solutions to contact respective subsets of the electrodes, and one of the subsets comprises cathodes, and another one of the subsets comprises anodes, thereby forming a dual-flow redox system;
  • the one or more fluid circuit sections are each filled with a respective electrolyte solution
  • said respective electrolyte solution comprise a redox couple which is soluble in both its oxidized form and reduced form, a supporting electrolyte which preferably does not exhibits redox processes in a potential range used for supplying power to the integrated circuits, and additives for tuning a redox potential and / or reversibility of the redox couple;
  • said respective electrolyte solutions comprises: any one of the following redox couples, or a derivative thereof: Fe 2+ /Fe 3+ , V 2+ /V 3+ , V0 2+ /V0 2 + , Ce 3+ /Ce 4+ , Co 2+ /Co 3+ , Cr 2+ /Cr 3+ , Ti 3+ /TiOH 3+ , Cr 3+ /Cr 2 0 7 2 ⁇ , BH 4 7B0 2 , OH7H 2 0 2 , BrVBr 3" , Mn 2+ /Mn 3+ , Ru 2+ /Ru 3+ ; and an additive such as acetate, o-phenanthroline, methylphenanthroline, dimethylphenanthroline, bipyridine, ethylenediamine, and said respective electrolyte solutions preferably comprises: any one of the following supporting electrolytes: H 2 S0 4 , HC1, Na 2 S0 4 , NaCl, NaOH, K 2
  • the invention is embodied as a computer system comprising: at last one integrated circuit package according to the invention; and an electrochemical power delivery unit in fluid communication with one or more fluid circuit sections of said at last one integrated circuit package, the electrochemical power delivery unit further comprising a convection unit configured to regulate convection of one or more electrolyte solutions in the fluid circuit sections of said at last one integrated circuit package, in accordance with power supply needs thereof, in operation.
  • the invention is embodied as a method of operating a computer system, comprising a step of: providing a computer system comprising an integrated circuit package according to the invention; supplying power to the integrated circuits by forcing at least one electrolyte solution in a respective fluid circuit section of said at last one integrated circuit package to contact at least some of the electrodes of said at last one integrated circuit package.
  • FIG. 1 shows a conventional single-chip package (prior art).
  • FIGS. 2 - 15 exemplify schematically integrated circuits according to various embodiments of the present invention.
  • FIG. 16 is a perspective view of a 3D stack of IC chips wherein embodiments of the invention can be implemented;
  • FIGS. 17 - 19 depict fluid circuit sections filled with electrolyte solutions that contact electrodes to supply power to IC package, as involved in embodiments;
  • FIG. 20 is a flowchart depicting steps of a method according to an embodiment of the invention.
  • FIG. 21 shows a computer system equipped with an electrochemical power delivery unit, according to an embodiment of the invention.
  • FIG. 22 illustrate a conventional datacenter architecture including an online uninterruptible power supply (prior art).
  • FIG. 23 is a scheme for a modified datacenter architecture including an online uninterruptible power supply, reflecting embodiments of the invention.
  • Said package has a layer structure with ICs and electrodes arranged in electrical connection with a layer of the layer structure.
  • the package further comprises fluid circuit sections, each meant to receive a respective electrolyte solution (or two distinct solutions, see the dual flow redox mode described below). Each solution involved has soluble electroactive species.
  • a fluid section is designed to receive and allow an electrolyte solution to contact corresponding electrodes, such as to supply power to the ICs, in operation. As electrodes are integrated to the package, electrical power can be supplied close to the ICs, thereby improving efficiency of the power supply.
  • a high electrical power density can furthermore be achieved, owing to the forced convection of the electrochemical solution contacting the electrodes.
  • suitable heat removal can be contemplated, it being noted that electrical power delivery and heat removal needs are congruent.
  • the fluid circuits can be optimally designed to substantially cool down the ICs.
  • Such a solution is particularly well suited for 3D ICs, in which interlayer cooling combines with electrochemical power delivery.
  • a bifunctional water-based coolant can be provided with electroactive redox couples which remain soluble at all stages of the power delivery process.
  • Aqueous redox couples are known which can provide a potential difference of e.g., 1 V between the negative and positive terminals.
  • Heat removal at rates above 200 W/cm can furthermore be achieved by means of forced convective interlayer cooling in e.g., 3D silicon stacks with pins.
  • the above solution advantageously applies to server operation as used in datacenters, in which the integration of reservoirs for the electroactive coolant can provide uninterruptible power supply (UPS) functionality.
  • UPS uninterruptible power supply
  • the autonomy can easily be scaled by varying the size of the reservoirs.
  • a further benefit of the electrochemical power supply is the elimination of the need for decoupling capacitors which frees more TSVs as well as valuable space in the processor stacks.
  • FIGS. 2 - 15 A conventional single-chip package 10' is first described, in reference to FIG. 1, for the sake of understanding.
  • Such a chip has a layer structure, as known.
  • the various layers depicted may for example respectively represent:
  • a modified integrated circuit package 10a is shown, which still has a layer structure, evoking the device of FIG. 1.
  • the package may for instance include the same successive layers as in FIG. 1, namely, the PWB 11, solder balls, substrate interconnect 13, solder bumps and underfill, and the chip 16.
  • electrodes 17 are now provided in electrical connection with a layer of the structure, e.g., directly arranged on such a layer.
  • electrodes 17 are arranged on PWB 11, which extends on one side of the remaining layer arrangement of the device 10a. ICs are thereby connected to the electrodes (here indirectly, through successive layers 11 - 15).
  • a fluid circuit section 19 is provided, which can be filled with an electrolyte solution with soluble electroactive species.
  • This section 19 is configured such as to allow the solution to contact electrodes 17 arranged on top of PWB layer 11 (e.g., an electrode array 17), whereby electrical power can be supplied to ICs layer 16, in operation.
  • the fluid section 19 is merely a distribution manifold, with an opening facing electrodes and which is connectable to a fluid circuit dispensing the solution, as symbolized here by inlet/outlet arrows 19i, 19o.
  • Suitable fluid circuit sections and connections to a fluid circuit can be obtained following known techniques of e.g., microfluidic sciences. Details of the electrochemistry shall be discussed later in reference to FIGS. 17 - 21.
  • the manifold could be designed as a cavity in a first silicon block, open on one or more faces thereof (e.g., on a bottom face). Fluid circuits can be provided as grooves in such a silicon block, e.g., open on the top face. Manifolds can else typically be built out of ceramics, metals or hard polymers, etc. A second silicon block can be brought in contact with the first one to close the open grooves. The first block is then laid on top of the structure layer where electrodes are arranged. Many other implementation techniques are possible.
  • channels for fluid distribution can be machined into metal heat sinks with high thermal conductivity, whereby the heat sinks can be placed on top of the IC packages and the electrodes are isolated from the heat sink material by an insulating layer.
  • Another implementation may include the micromachining of silicon to provide microfluidic channels, with possible arrangements of the electrodes being discussed later in FIGS. 9 - 15.
  • a conventional single-chip package is provided, yet with neighboring electrochemical (EC) power conversion unit and electrode array for power delivery placed on PWB.
  • EC electrochemical
  • Such a solution allows for in situ power supply.
  • it participates to heat removal inasmuch as the solution circulating through the manifold 19 shall capture heat transferred from the chip to the PWB.
  • next figures correspond to other embodiments of a modified integrated circuit package 10b - 10 ⁇ , still having a layer structure as in FIG. 1 or 2. Yet, not all numeral references are repeated, for conciseness.
  • FIG. 3 shows a conventional single-chip package 10b, wherein a neighboring power conversion unit 19 (e.g., an electrolyte solution manifold in fluid communication with a fluid circuit) and electrodes 17 are provided for power delivery, this time on the common substrate interconnect 13, the latter arranged on top of solder balls and PWB layers, which together extend laterally from the rest of the package.
  • a neighboring power conversion unit 19 e.g., an electrolyte solution manifold in fluid communication with a fluid circuit
  • electrodes 17 are provided for power delivery, this time on the common substrate interconnect 13, the latter arranged on top of solder balls and PWB layers, which together extend laterally from the rest of the package.
  • electrical power is supplied closer to the final consumer 16. Accordingly, better heat removal can be expected, in comparison with the example of FIG. 2.
  • FIG. 4 depicts another single-chip package 10c with a fluid distribution manifold 19 on top of an electrode array 17 arranged directly on the IC chip 16 for power delivery and cooling.
  • a fluid distribution manifold 19 on top of an electrode array 17 arranged directly on the IC chip 16 for power delivery and cooling.
  • FIG. 6 is similar, i.e., it shows a device lOe with a fluid distribution manifold 19 on top of the layer structure, arranged in fluid communication with an electrode array 17 for power delivery and cooling. Yet, the device represented is now a vertically integrated multi-chip package. For instance, prior art solutions exist which allow for the manufacture of the multilayer in such a multi-chip package. A difference here resides in the integration of electrodes 17 and power conversion unit (fluid section 19) suitably arranged on top of a chip 16.
  • the fluid circuit sections 19 are configured such as to allow the electrolyte solution to flow along one layer (i.e., 11, 13 or 16) of the layer structure of the IC package 10a - c.
  • Such a configuration is advantageous inasmuch as it allows for designing the power conversion unit merely as an add-on, placed on top of a layer of the structure 10a - c.
  • a skilled person may further realize that such a design does not require substantial changes in the fabrication process of the chip.
  • a single- or dual-flow redox system can be contemplated.
  • the fluid circuit section 19 contains only one electrolyte solution, the latter contacting an array of selective electrodes. If a dual-flow redox system is contemplated, the section 19 has to be filled with two fluids, e.g., separated by a membrane, and contacting respective sets of electrodes, suitably arranged to that aim.
  • a fluid circuit section is configured to allow an electrolyte solution to flow between two layers of the layer structure, e.g., two IC layers in a 3D stack of ICs.
  • Such embodiments shall be discussed in reference to FIGS. 5, 7- 15.
  • Such arrangements enable power supply close to the IC layers, if not directly.
  • they allow for the electrolyte solution(s) to more efficiently remove the heat produced at the IC layers.
  • FIG. 5 shows a single-chip package lOd with fluid distribution integrated into substrate interconnect 13' for power delivery and cooling.
  • the substrate interconnect 13' is configured as two suitably separated layers, e.g., constrained by spacers 23, as known per se.
  • the double-layer configuration of the substrate interconnect 13' replaces the previous fluid circuit sections and provides a fluid path 19' that is advantageous in many respects (efficient power supply and heat removal).
  • the dimensions of the double-layer can be adapted to the nature of the electrolyte solution, in order to favor convection thereof and/or prevent undesired capillary effects.
  • FIG. 7 shows a vertically integrated multi-chip package lOf with dual power delivery and cooling, which actually combines the concepts and advantages of FIGS. 4 and 5 within a multi-chip package.
  • FIG. 16 A still different concept of power delivery and cooling is provided in the embodiment of FIG. 8, proposing a vertically integrated multi-chip package lOg with spacers 23 for interlayer fluid distribution 19'.
  • Numeral reference 19' is hereafter adopted for interlayer fluid circuit section, as opposed to reference 19 for single-layer sections.
  • a housing 21 e.g.., silicon lateral walls
  • the electrolyte solution can therefore be flown between layers of the layer structure, e.g., IC layers. Accordingly, an efficient, combined scheme for power supply and cooling can be achieved for a vertically integrated multi-chip package.
  • FIG. 16 A corresponding perspective view is shown in FIG. 16. In FIG.
  • numeral references 24, 25 respectively corresponds to through-silicon vias (TSV) and solder balls.
  • TSV through-silicon vias
  • the structure as a whole defines multiple fluid circuit sections 19' that ensures efficient power supply and cooling. While a single general inlet 19i and a single general outlet 19o is depicted in this embodiment, we note that suitable variants may use a dual flow inlet and single outlet, or a dual flow inlet and a dual flow outlet, etc.
  • At least one fluid circuit section 19' can be designed to allow an electrolyte solution to flow between layers of the device, e.g., two IC layers of a 3D stack.
  • the electrode arrangements pertaining to the interlayer fluid sections are not depicted in these figures, for the sake of intelligibility. In fact, any one of the electrode configurations discussed in reference to FIGS. 9 - 15 can be applied, as to be discussed now.
  • the embodiments of FIGS. 5, 7, or 8 (and 16) can each accommodate single or dual redox flow solutions. Minor changes are nonetheless required for implementing a dual redox flow solution, such as to allow for proper distribution of electrolyte solutions within one or more fluid sections 19'.
  • At least one fluid circuit section 19, 19' can be designed such that each of the sections 19, 19' may receive and allow one (or two) electrolyte solution(s) to flow along or between layers of the layer structure of the devices 10a - lOg.
  • FIGS. 9 - 15 show partial views of chip devices lOh - 10 ⁇ .
  • FIG. 9 depicts an on-chip electrode arrangement 17 for a single electrolyte flow in the interlayer configuration.
  • the layers 13, 16 at stake can e.g., be a dual substrate interconnect (such as 13' in FIG. 5 or 7) or two parallel IC chips 16 as in FIG. 8, suitably constrained by spacers 23.
  • a possible electrode arrangement is an array of alternated electrodes mounted on the inner-side of each of the two layers involved (i.e., the side in contact with the electrolyte flow). Electrodes 17al, 17cl may for instance correspond to anodes and cathodes, respectively, arranged on a first layer 13, 16.
  • Electrodes 17a2 and 17c2 are their counterpart on the second layer 13, 16 (subscript “a” is for “anode” (white), “c” is for “cathode” (black), "1” and “2" correspond to first and second layers, respectively).
  • an electrode vs. electrolyte configuration requires an adapted selectivity for the electrodes, since a single flow is involved here. Descriptions of single flow or mixed reactant systems have been given previously (e.g. Priestnall 2002, Sung 2007, Mano 2003, see the final reference list). This configuration can for instance be used in the embodiments of FIGS. 5, 7 and 8.
  • the electrode selectivity may, for instance, be implemented by coating one electrode with a porous material, e.g. a zeolite, which allows for the passage of the smaller ions only. Further, electrocatalytic materials may be introduced on the electrodes which promote oxidation or reduction of the electroactive species, respectively.
  • FIG. 10 shows a similar arrangement, yet with a somewhat different electrode arrangement.
  • cathodes 17c 1 are distributed on the inner-side of the first (top) layer, while anodes 17a2 are mounted on the second layer.
  • This configuration again requires electrode selectivity. While it allows for easier manufacture than the configuration of FIG. 9 (only one type of electrodes is provided on a given layer), the electrical circuit obtained is less easily closed, implying somewhat less power efficiency, and requires high electrode selectivity.
  • This interlayer configuration can yet be used in the embodiments of FIGS. 5, 7 and 8.
  • FIG. 11 shows another electrode arrangement, wherein the electrode functionality is now combined with that of the spacers 23.
  • an alternated arrangement of anodes 17a and cathodes 17c can be contemplated.
  • the material of the spacers is accordingly adapted. Suitable processes are available which allow to selectively adapt the material used on the spacer surface.
  • the electrode material may be applied to the spacer surface by means of known microfabrication techniques, such as evaporation, sputtering, vapor deposition or plating in combination with anisotropic material removal using inverse sputtering or ion etching.
  • the electrode materials used may be selected according to their compatibility with the solution and activity toward the electrochemical reactions, and may notably comprise carbon and noble metals such as Au, Pt, or Pd. Further electrode materials may include metallic alloys, electronically conductive silicides or carbides such as SiC and B 4 C. Selectivity and catalytic activity may be imparted to the electrode materials as mentioned previously.
  • a variant such as that of FIG. 11 advantageously allows for optimizing the spacer functionality and free some valuable area on the inner sides of the layers involved. This configuration can still be used together with embodiments of FIGS. 5, 7 and 8.
  • a single overall electrolyte flow is contemplated (selective electrodes are then needed).
  • the corresponding fluid circuit can decompose into one (FIG. 5) or multiple interlayer fluid circuit sections 19' (e.g., as in FIG. 8), or still comprise an on-top circuit section 19 in combination with an interlayer section 19' (FIG. 7).
  • one or more fluid circuit sections 19, 19' are involved, yet in combination with a single electrolyte solution.
  • the said fluid sections are suitably configured, such that the single electrolyte solution may contact selective cathodes and anodes (single flow redox solution).
  • the embodiments of FIGS. 12 - 15 involve interlayer fluid circuit sections 19' meant to receive distinct electrolyte solutions (not shown).
  • the solutions can e.g., be separated by a membrane 20 or another type of separation, see below.
  • membrane materials for microfluidics has been described previously (de Jong 2006) and may in particular comprise porous silicon (Moghaddam 2010, Tjerkstra 2000).
  • the electrolyte solutions are accordingly confined within respective fluid circuit sections 19 1 ', 19 2 ', such as to contact respective subsets of the electrodes (i.e., cathodes or anodes), thereby forming a dual-flow redox system.
  • FIG. 12 shows an on-chip electrode arrangement for two electrolyte flows confined within respective fluid circuit sections 19 1 ', 19 2 , in an interlayer configuration.
  • the two flows are separated in the plane parallel to the chip surface (dashed line), which denotes either a membrane 20, a diffusion zone 20' or an intermediate layer, or still another type of separation which allows passage of non-active ions in order to close the electrical circuit.
  • the electrode arrangement is otherwise similar to that of FIG. 10.
  • each spacer is now designed to serve as both a cathode and anode (i.e., on each side of a separation line).
  • FIG. 14 another on-chip electrode arrangement for two electrolyte flows in the interlayer configuration is shown.
  • the flows are now directed out of the plane of the drawing and are separated in the plane perpendicular to the chip surface (dashed line), which again may denote a membrane, diffusion zone, intermediate layer or still another type of separation.
  • the interlayer spacers are not shown for clarity.
  • the two flows are confined within respective anodic or cathodic sections 19a', 19c'.
  • Numeral references 27 denote fluid outlets out of the plane of the drawing.
  • FIG. 15 is similar to FIG. 14, except that the electrode arrangement is now applied to spacers, as in FIG. 11 or 13.
  • a spacer on one side of the separation 20, 20' serves as cathode 17c, the other (on the other side) serving as anode 17a.
  • the flows are confined within respective anodic or cathodic sections 19a', 19c'.
  • FIGS. 17 - 19 show details of fluid circuit sections filled with electrolyte solutions 31, 32 that contact electrodes for supply power and cooling.
  • FIGS 17 and 18 pertain to a dual-flow redox system, as previously discussed, while FIG. 19 corresponds to a single-flow redox system.
  • Red and Ox represent reduced and oxidized electroactive species, and electron transfer at the electrode/solution interface is indicated by arrows.
  • the flow direction of the electrolyte solutions is from top to bottom.
  • FIG. 17 evokes a conventional redox flow battery configuration with an ion- selective membrane separating electrolyte solutions and identical electrode materials.
  • FIG. 18 invokes a membraneless redox electrochemistry solution, relying on membraneless colaminar flow configuration with identical electrode materials.
  • FIG. 19 pertains to single-flow architecture with selective electrodes (implying different electrode materials which selectively enhance the oxidation and reduction reactions). Note that in each case, substantial heat removal can be obtained via the circulation of the electrolyte solutions, in addition to EC power supply.
  • Both the dimensions and flow rates of the fluid circuit sections may be adapted according to the actual electrolyte solution used and power needs, e.g., in order to optimize power density and heat removal. Care should notably be taken of capillarity phenomena, i.e., minimal interlayer dimensions may need to be considered. On the contrary, capillarity effects can be exploited to favor convection, e.g., using capillary pumps. Note that such considerations are absent when dealing with gas instead of liquids. However, the heat removal capacity provided by a liquid is much larger than that of a gas.
  • the electrolyte solution generally consists of an active redox couple, which participates in electronic charge transfer with the electrode; a supporting electrolyte, which provides ions which contribute toward the ionic conductivity of the solution but not to electronic charge transfer; and a solvent, which is capable of dissolving appreciable amounts of both the active redox couple and the supporting electrolyte.
  • the active redox couple should preferably be present in dissolved form both in the reduced and the oxidized state, and may therefore be selected from couples comprising Fe 2+ /Fe 3+ , V 2+ /V 3+ , V0 2+ /V0 2 + , Ce 3+ /Ce 4+ , Co 2+ /Co 3+ , Cr 2+ /Cr 3+ , Ti 3+ /TiOH 3+ , Cr 3+ /Cr 2 0 7 2 ⁇ , BH 4 7B0 2 , OH7H 2 0 2 , BrVBr 3" , Mn 2+ /Mn 3+ , Ru 2+ /Ru 3+ .
  • the redox couple may be introduced into the solution in the form of a salt or any suitable derivative, such as a sulfate, chloride, hydroxide, or carbonate.
  • concentration of the salt should be high enough to provide a high density of electroactive species, preferably 1 mol/L or higher.
  • the concentration may be lower for miniaturized electrode dimensions due to enhanced rates of diffusion, as is known for microelectrode arrays.
  • the supporting electrolyte should be chosen to match the salt containing the active redox couple, e.g. H 2 S0 4 , HC1, Na 2 S0 4 , NaCl, NaOH, K 2 S0 4 , KOH.
  • the concentration of the supporting electrolyte should be high enough to minimize the resistance of the solution while still avoiding ion association or too high viscosities, preferably 0.5 mol/L or higher. In variants, concentrations of 2 mol/L or higher are preferred, yielding appreciable performances.
  • the solvent should enable high solubilities of the salt containing the active redox couple and of the supporting electrolyte.
  • water is a suitable solvent.
  • ligand species may be added to adapt the redox potential of the active redox couple, as is known in the science of electrochemistry (e.g. Chen 1981, Chen 1982, Murthy 1989).
  • each of the two solutions preferably contains a different active redox couple.
  • the potential difference between the redox couples is chosen to lie close to the voltage required for powering the IC.
  • the single solution contains both active redox couples, with the electrodes exhibiting a high selectivity as described previously.
  • the separation distance between the electrodes may be arbitrarily chosen, but should preferably be minimized in order to obtain low ionic resistance of the solution between the electrodes.
  • the spacing between the electrodes is defined by the height of the spacers. Preferably, this height lies in the range of 10 ⁇
  • FIG. 20 is a flowchart depicting steps of a method according to an embodiment of the invention.
  • the method aims at supplying power to an IC package as discussed above by forcing convection of an electrolyte solution.
  • a computer system is provided with several chip packages (i.e., according to embodiments above), and further equipped with an electrochemical (EC) power unit, step 100.
  • the EC unit is in fluid communication with the chip's fluid sections, such as to enable convection of the electrolyte solution(s).
  • the actual power needs can be monitored (step S300) and the fluid convection accordingly regulated, S200, such as to supply suitably adapted electrical power.
  • a simple feedback loop would then be required.
  • FIG. 21 shows a computer system equipped with an electrochemical power delivery unit 110, according to an embodiment of the invention.
  • the proposed redox flow power delivery merely consists of inserting a computer system 100 (e.g., a datacenter comprising hundreds of chip packages such as discussed above, such as 3D silicon stacks with pins) on the electrolyte flow paths of a conventional redox flow battery.
  • a computer system 100 e.g., a datacenter comprising hundreds of chip packages such as discussed above, such as 3D silicon stacks with pins
  • Such a battery likely comprises two fluid circuits 111, 112, with respective electrolyte tanks 121, 122. Flow rates in the circuits are regulated by pumps 141, 142.
  • the cells 151, 152 are furthermore contacted by respective electrodes 131, 132 (here for charge only) and are separated by an EC membrane 25, onto which voltage is applied by an additional power supply 120 for re-loading the solutions.
  • the configuration of FIG. 21 actually enables continuous operation.
  • such a battery may further allow for high flow rates, high power density, elevated temperature operation and coolant functionality.
  • Interconnection of the computer system 100 on the electrolyte flow paths of the battery may use techniques imported from microfluidic sciences (e.g., tubings and/or PDMS machining, manifolds, etc.), which are known per se.
  • heat removal at rates above 200 W/cm can be achieved by means of forced convective interlayer cooling in 3D stacks with pins (Brunschwiler 2009).
  • Power delivery is achieved by providing electroactive species in the electrolyte solutions which electrochemically discharge at electrodes of the integrated circuit package, as discussed above.
  • power- carrying TSVs are currently estimated to account for 66% of all TSV- occupied area.
  • this area is freed for enhanced design freedom or integration of additional signal vias.
  • electrochemical discharge occurs locally (e.g., on-chip), no interfacing with components beyond the chip level is required. All power-related wiring can thus be simplified and restricted to the chip level.
  • UPS uninterruptible power supply
  • FIGS. 22 - 23 Schemes of a modified vs. conventional datacenter architecture including an online UPS are shown in FIGS. 22 - 23. More specifically, a comparison is made between conventional power delivery architecture in a datacenter (FIG. 22) with combined cooling/electrochemical power delivery (FIG. 23).
  • the energetic efficiencies for components included in the conventional architecture are based on reported values for heavy loads (Pratt 2007) while the energetic efficiencies for the electrochemical system are best estimates. Thin lines represent current flow, while electroactive coolant flow is represented by thick lines.
  • the abbreviations used are standard: Uninterruptible Power Supply (UPS), Alternating Current (AC), Direct Current (DC), Power Distribution Unit (PDU), Power Supply Unit (PSU), Voltage Regulator (VR), Electrochemical Cell (EC).
  • UPS Uninterruptible Power Supply
  • AC Alternating Current
  • DC Direct Current
  • PDU Power Distribution Unit
  • PSU Power Supply Unit
  • VR Voltage Regulator
  • Electrochemical Cell EC
  • the percentages given in FIG. 22 correspond to fractions of electrical power remaining after successive conversion steps of the electrical power entering the datacenter.
  • the electrical power needed to directly supply the processors is shown as an example.
  • the power delivery to the processors is estimated to be only 36% efficient within the datacenter, mostly due to conversion losses.
  • electrochemical power delivery By incorporating electrochemical power delivery (FIG. 23), transformation from utility-level 400 V AC to server-level 1 V DC can be performed centrally at the beginning of the conversion chain. For copper-based wires, this voltage transformation would require 400 times more copper to carry the corresponding current with acceptable ohmic loss. However, by converting the electrical energy to chemical energy (DC/EC electrochemical cell in FIG. 23) at a central location in the facility, such excessive wiring is not required.
  • the charged electroactive coolant can be distributed to the rack level at a flow rate of 10 L/min, which corresponds to the transport of about 16 kA of electrical current assuming an exchange of one electron per redox couple pair and 1 mol/L active redox couple concentrations for each of two electrolyte solutions.
  • the rate of energy transport is dictated by the flow rate of the electroactive coolant. Since power requirements for cooling are not included in FIG. 23, the pumping power involved in transporting the electroactive coolant is considered part of the cooling infrastructure and is not included in the efficiency comparison. Further, for large currents in the order of several kA, charge transport by forced convection of ions through pipes of suitable diameters is more energy- and cost-efficient than electronic conduction through metallic wires.
  • the coolant flow is distributed through a manifold to the server level at a lower flow rate to avoid significant pressure drops in narrower channels, until the final conversion of chemical energy to electrical energy occurs in close proximity to the IC, e.g. in the 3D IC interlayer (processor level in FIG. 23).
  • the estimated efficiency of power delivery to the processors is 77 % using the electrochemical power delivery concept in a datacenter, which provides dramatic improvements compared to conventional architectures.
  • the main reasons for the better performance of the present electrochemical power delivery concept are the removal of the conventional online UPS system and the ability to distribute power at a low voltage level, in the form of chemical energy instead of electrical energy, thus avoiding multiple transformation steps in the power delivery chain.
  • the storage of electrical energy as chemical energy in the form of soluble electroactive species and its conversion back to electrical energy using forced convection can be related to the field of redox flow batteries (RFBs) or reversible fuel cells.
  • RFBs redox flow batteries
  • Scientific reviews of the class of galvanic cells are available, whose commercial applications have hitherto been primarily geared toward energy storage in decentralized power grids as well as peak-shaving and load-leveling purposes (Bartolozzi 1989, de Leon 2006).
  • the iron-chromium Thaller 1979
  • all-vanadium Skyllas-Kazacos 1987
  • fuel utilization is a key performance indicator in conventional RFB technology, particularly in microfluidic implementation (e.g. Kjeang 2007).
  • fuel utilization is generally defined as the fraction of chemical energy converted to electrical energy by electrochemical processes upon a single circulation of the electroactive solutions.
  • the proposed combined cooling/electrochemical power delivery strategy carries a significant potential for exploiting a liquid-cooling infrastructure by simultaneously addressing the power delivery to ICs.
  • Major potential benefits of this concept include an improved bandwidth and efficiency due to simplification of the power delivery infrastructure on the chip and facility scales.
  • a disadvantage of the embodiment proposed in FIG. 21 is the need for two separate electroactive species for the anode and the cathode reaction and the need for two storage tanks. This is not a major obstacle but this increases the complexity of the setup.
  • Another problematic component of the redox flow battery is the need for a semi-permeable membrane (de Jong 2006).
  • the membrane is eliminated, the implementation of the invention relies instead on parallel laminar flows that are separated again at the end of the conversion zone (see FIG. 18).
  • This approach is, however, restricted to strictly colaminar flow (Kjeang 2009) and may be somewhat difficult to implement in TSV compatible arrays.
  • the electrodes are functionalized to allow specific anode and cathode reactions to take place selectively at the electrodes from within the same solution (see FIG. 19). This approach may however be difficult to implement for 1 V reactions, due to limited catalytic selectivity (Mano 2003). It becomes easier to implement for lower voltages.
  • the beneficial effects of the electrochemical power supply can be increased when the systems are operated at elevated temperatures as it is needed for direct thermal re-use. Re-use of thermal energy in, e.g., heating applications further improves the energetic efficiency of the computer system.
  • K temperature increase increases electrochemical reaction kinetics when combined with efficient mass transport improvements by three to four orders of magnitude.
  • Computer program code required to implement at least parts of the above invention may be implemented in a high-level (e.g., procedural or object-oriented) programming language, or in assembly or machine language if desired; and in any case, the language may be a compiled or interpreted language.
  • Suitable processors include general and special purpose microprocessors. Note that operations that the device, the terminal, the server or recipient performs may be stored on a computer program product tangibly embodied in a machine-readable storage device for execution by a programmable processor; and method steps of the invention may be performed by one or more programmable processors executing instructions to perform functions of the invention.
  • the above invention may be at least partly implemented in digital electronic circuitry, or in computer hardware, firmware, software, or in combinations of them.
  • a processor will receive instructions and data from a read-only memory and/or a random access memory.
  • Storage devices suitable for tangibly embodying computer program instructions and data include all forms of non-volatile memory, including by way of example semiconductor memory devices, such as EPROM, EEPROM, flash memory devices or others.
  • the electrodes in contact with the electrolyte solutions may be structured using conventional microstructuring techniques in order to achieve a surface area enlargement as well as enhanced mass transport by diffusion. Additional features such as so-called turbulence promoters may be structured close to the electrodes in order to promote mass transport to the electrodes by convection, which is favorable for high power densities.

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Abstract

L'invention concerne en particulier un boîtier de circuit intégré (10c). Ledit boîtier possède une structure stratifiée avec des circuits intégrés (17) et des électrodes placées en connexion électrique avec une couche (16) dans la structure stratifiée. Le boîtier comprend en outre une ou plusieurs sections de circuit de fluide (19), chacune étant destinée à recevoir une solution électrolytique respective (ou deux solutions distinctes, voir le mode redox à double flux décrit ci-dessous). Chacune des solutions utilisées comporte une espèce électroactive. Une section de fluide est conçue pour recevoir une solution électrolytique et lui permettre d'entrer en contact avec des électrodes correspondantes, de manière à assurer l'alimentation électrique des circuits intégrés en service. Comme des électrodes sont intégrées dans le boîtier, une alimentation électrique peut être fournie à proximité des circuits intégrés, ce qui améliore l'efficacité de l'alimentation électrique. Enfin, comme un liquide est utilisé in situ, il est possible d'obtenir une dissipation thermique adéquate, étant noté que la fourniture de l'énergie électrique et la dissipation thermique s'effectuent en parallèle.
PCT/IB2011/053477 2010-09-22 2011-08-04 Boîtier de circuit intégré à alimentation électrochimique WO2012038843A1 (fr)

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JP2014170892A (ja) * 2013-03-05 2014-09-18 Nec Corp ３次元積層半導体装置
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WO2015097270A3 (fr) * 2013-12-24 2015-08-27 Rhodia Operations Batterie redox a circulation transformant une energie chimique en electricite de maniere reversible
EP4113678A1 (fr) * 2021-07-01 2023-01-04 Micro Electrochemical Technologies S.L. Système et procédé de stockage d'énergie microfluidique redox
WO2023275349A1 (fr) * 2021-07-01 2023-01-05 Micro Electrochemical Technologies S.L. Système et procédé de stockage d'énergie microfluidique d'oxydoréduction
WO2024215519A3 (fr) * 2023-04-11 2024-12-26 Microsoft Technology Licensing, Llc Processeur alimenté par électrolyte liquide intégré de manière hétérogène
US11909449B1 (en) 2023-05-31 2024-02-20 Microsoft Technology Licensing, Llc Liquid powered and cooled microfluidics photonics architecture
WO2024249127A1 (fr) * 2023-05-31 2024-12-05 Microsoft Technology Licensing, Llc Architecture photonique microfluidique alimentée par liquide et refroidie
US12301290B2 (en) 2024-01-12 2025-05-13 Microsoft Technology Licensing, Llc Liquid powered and cooled microfluidics photonics architecture

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GB201305369D0 (en) 2013-05-08
DE112011102577B4 (de) 2015-02-12
JP5815034B2 (ja) 2015-11-17
GB2497246A (en) 2013-06-05
GB2497246B (en) 2014-07-09
DE112011102577T5 (de) 2013-05-08
JP2013541841A (ja) 2013-11-14
CN103119713A (zh) 2013-05-22

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