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WO2012036537A3 - Appareil et procédé pour fabriquer du graphène en utilisant une lampe flash ou un faisceau laser et graphène fabriqué par ceux-ci - Google Patents

Appareil et procédé pour fabriquer du graphène en utilisant une lampe flash ou un faisceau laser et graphène fabriqué par ceux-ci Download PDF

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Publication number
WO2012036537A3
WO2012036537A3 PCT/KR2011/006917 KR2011006917W WO2012036537A3 WO 2012036537 A3 WO2012036537 A3 WO 2012036537A3 KR 2011006917 W KR2011006917 W KR 2011006917W WO 2012036537 A3 WO2012036537 A3 WO 2012036537A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
substrate
flash lamp
roll
chamber
Prior art date
Application number
PCT/KR2011/006917
Other languages
English (en)
Korean (ko)
Other versions
WO2012036537A2 (fr
Inventor
이건재
최인성
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100091640A external-priority patent/KR101198482B1/ko
Priority claimed from KR1020110006115A external-priority patent/KR101172625B1/ko
Priority claimed from KR1020110062484A external-priority patent/KR101260606B1/ko
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Publication of WO2012036537A2 publication Critical patent/WO2012036537A2/fr
Publication of WO2012036537A3 publication Critical patent/WO2012036537A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L'invention concerne un procédé et un appareil permettant de fabriquer du graphène en utilisant une lampe flash ou un faisceau laser, ainsi que le graphène fabriqué par ceux-ci. L'appareil de la présente invention comprend : un compartiment dans lequel est disposé un substrat permettant de faire croître le graphène, une unité formant orifice d'entrée qui introduit un gaz de réaction sur un côté du substrat, une unité de vide qui applique du vide au compartiment et une lampe flash ou un dispositif laser disposé sur la partie supérieure du compartiment afin d'appliquer par illumination la lumière sur le substrat, le substrat étant transféré par un moyen de transfert à rouleaux. Le procédé et l'appareil permettant de fabriquer le graphène conformément à la présente invention génèrent une induction du gaz de réaction pour la croissance du graphène en utilisant la chaleur de la lumière illuminée sur une grande surface à partir de la lampe flash de façon à faire croître le graphène sur le substrat. De plus, pour faire croître le graphène sur celui-ci, un substrat souple est transféré par un système de transfert à rouleaux, et des composants à semiconducteur à base de graphène peuvent être produits en masse en faisant uniquement varier la composition du gaz de réaction sans déformer le graphène.
PCT/KR2011/006917 2010-09-17 2011-09-19 Appareil et procédé pour fabriquer du graphène en utilisant une lampe flash ou un faisceau laser et graphène fabriqué par ceux-ci WO2012036537A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2010-0091640 2010-09-17
KR1020100091640A KR101198482B1 (ko) 2010-09-17 2010-09-17 플래쉬 램프를 이용한 그래핀 제조장치, 제조방법 및 이를 이용하여 제조된 그래핀
KR10-2011-0006115 2011-01-21
KR1020110006115A KR101172625B1 (ko) 2011-01-21 2011-01-21 레이저를 이용한 반도체 소자 제조방법, 이에 의하여 제조된 그래핀 반도체 및 그래핀 트랜지스터
KR10-2011-0062484 2011-06-27
KR1020110062484A KR101260606B1 (ko) 2011-06-27 2011-06-27 플래쉬 램프를 이용한 그래핀 제조장치, 제조방법 및 이를 이용하여 제조된 그래핀 반도체 소자

Publications (2)

Publication Number Publication Date
WO2012036537A2 WO2012036537A2 (fr) 2012-03-22
WO2012036537A3 true WO2012036537A3 (fr) 2012-09-20

Family

ID=45833050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006917 WO2012036537A2 (fr) 2010-09-17 2011-09-19 Appareil et procédé pour fabriquer du graphène en utilisant une lampe flash ou un faisceau laser et graphène fabriqué par ceux-ci

Country Status (1)

Country Link
WO (1) WO2012036537A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104495821B (zh) * 2014-12-16 2016-06-15 重庆墨希科技有限公司 一种单层连续石墨烯薄膜卷材的制备方法及装置
CN104495822B (zh) * 2014-12-16 2016-06-15 重庆墨希科技有限公司 一种石墨烯薄膜卷材的制备方法及装置
CN110155994B (zh) * 2019-04-04 2023-01-17 江苏大学 一种直接制备复合图案化石墨烯的装置及方法
CN113380949B (zh) * 2021-06-07 2023-04-07 天津大学 瞬态电子器件的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187694A1 (en) * 2006-02-16 2007-08-16 Pfeiffer Loren N Devices including graphene layers epitaxially grown on single crystal substrates
US20080128397A1 (en) * 2006-11-06 2008-06-05 Unidym, Inc. Laser patterning of nanostructure-films
KR20090043418A (ko) * 2007-10-29 2009-05-06 삼성전자주식회사 그라펜 시트 및 그의 제조방법
US20100102292A1 (en) * 2007-03-02 2010-04-29 Nec Corporation Semiconductor device using graphene and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187694A1 (en) * 2006-02-16 2007-08-16 Pfeiffer Loren N Devices including graphene layers epitaxially grown on single crystal substrates
US20080128397A1 (en) * 2006-11-06 2008-06-05 Unidym, Inc. Laser patterning of nanostructure-films
US20100102292A1 (en) * 2007-03-02 2010-04-29 Nec Corporation Semiconductor device using graphene and method of manufacturing the same
KR20090043418A (ko) * 2007-10-29 2009-05-06 삼성전자주식회사 그라펜 시트 및 그의 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TOMOHIDE TAKAMI ET AL., E-J. SCI. NANOTECH., vol. 7, 12 December 2009 (2009-12-12), pages 882 - 890 *

Also Published As

Publication number Publication date
WO2012036537A2 (fr) 2012-03-22

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