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WO2012066846A1 - Capteur d'image à semi-conducteurs et dispositif de réalisation d'image - Google Patents

Capteur d'image à semi-conducteurs et dispositif de réalisation d'image Download PDF

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Publication number
WO2012066846A1
WO2012066846A1 PCT/JP2011/071008 JP2011071008W WO2012066846A1 WO 2012066846 A1 WO2012066846 A1 WO 2012066846A1 JP 2011071008 W JP2011071008 W JP 2011071008W WO 2012066846 A1 WO2012066846 A1 WO 2012066846A1
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WIPO (PCT)
Prior art keywords
solid
imaging device
state imaging
light
photoelectric conversion
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PCT/JP2011/071008
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English (en)
Japanese (ja)
Inventor
有人 澤田石
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富士フイルム株式会社
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Publication of WO2012066846A1 publication Critical patent/WO2012066846A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
    • G03B13/32—Means for focusing
    • G03B13/34—Power focusing
    • G03B13/36—Autofocus systems

Definitions

  • the present invention relates to a solid-state imaging device including a plurality of pairs of pupil division pixel units.
  • a phase difference detection method is known as one of focus detection techniques.
  • a defocus amount of the photographing lens is detected by using signals from a pair of pupil division pixels that receive light beams passing through different pupil regions of the photographing lens.
  • This phase difference detection method is often used in single-lens reflex cameras because it can perform focus adjustment at a higher speed than the focus detection technology of the contrast AF method.
  • the phase difference detection method employed in the conventional single-lens reflex camera is based on the phase difference between the detection information of each of the two phase difference detection line sensors provided separately from the solid-state imaging device that images the subject. It is configured to detect the distance to the subject.
  • This phase difference detection method requires a line sensor for phase difference detection in addition to the solid-state image sensor, which increases the cost of parts and manufacturing, and further increases the size of the apparatus.
  • the light shielding film openings of a pair of adjacent pixels are made small, and the light shielding film opening positions of one and the other of the pair of adjacent pixels are set in the phase difference detection direction (normal direction). In this case, the phase difference is detected by shifting in the horizontal direction.
  • a large-format (large area) solid-state imaging device capable of increasing the light-receiving area of each pixel can obtain phase difference information at high speed and high accuracy even if the light-shielding film aperture is thus reduced.
  • the phase difference may vary depending on the state of the subject.
  • the accuracy of information that is, the in-focus position detection accuracy is lowered.
  • a method of gaining up the signal output from the phase difference pixel to acquire phase difference information is also conceivable. However, with this method, noise is also gained up, so that sufficient focus position detection accuracy cannot be obtained.
  • An object of the present invention is to provide a solid-state imaging device capable of acquiring phase difference information and obtaining a focus position at high speed and with high accuracy regardless of the state of a subject even when applied to a solid-state imaging device having a small area. It is providing an imaging device provided with.
  • the solid-state imaging device of the present invention is a solid-state imaging device including a pair of pupil-dividing pixel units, and each of the two pupil-dividing pixel units constituting the pair includes a photoelectric conversion element and the photoelectric conversion element. And a condensing lens that condenses light on the photoelectric conversion element, and is provided in the vicinity of a position where the light beam is converged most thinly by the condensing lens, and the photoelectric conversion element of the pupil division pixel unit
  • a light-shielding part that shields a part of the light-receiving surface, and the light-shielding part includes a center of an optical aperture of the photoelectric conversion element included in each of the two pupil-dividing pixel parts constituting the pair.
  • the imaging device of the present invention includes the solid-state imaging device.
  • a solid-state image sensor capable of acquiring phase difference information and obtaining a focus position at high speed and with high accuracy regardless of the state of the subject, and this An imaging apparatus including the above can be provided.
  • FIG. 1 is a schematic plan view showing a schematic configuration of a solid-state imaging device 100 for explaining an embodiment of the present invention.
  • AA cross-sectional schematic diagram of the solid-state imaging device 100 shown in FIG. BB cross-sectional schematic diagram in the solid-state imaging device 100 shown in FIG.
  • FIG. 1 is a schematic cross-sectional view taken along line AA when the solid-state imaging device 100 shown in FIG. 1 is a MOS type.
  • the figure which shows the modification of the cross-sectional structure shown in FIG. The figure which shows the result of the wave optical simulation (incidence angle 0 degree) with respect to the pixel part 10 for pupil division
  • the figure which shows the modification of the cross-sectional structure shown in FIG. FIG. 1 is a schematic cross-sectional view taken along the line AA when the solid-state imaging device 100 shown in FIG.
  • FIG. 1 is a schematic cross-sectional view taken along the line AA when the solid-state imaging device 100 shown in FIG.
  • FIG. 1 is a schematic plan view showing a schematic configuration of a solid-state imaging device 100 for explaining an embodiment of the present invention.
  • the solid-state imaging device 100 is used by being mounted on an imaging device such as an imaging module of a digital camera, a digital video camera, or a camera-equipped mobile phone.
  • the solid-state imaging device 100 shown in FIG. 1 includes a plurality of pixel portions arranged in a two-dimensional manner (in the example of FIG. 1, a square lattice) in a horizontal direction X and a vertical direction Y orthogonal thereto.
  • the plurality of pixel portions include a normal pixel portion 10, a pupil division pixel portion 11, and a pupil division pixel portion 12.
  • the pupil division pixel unit 11 constitutes a pair together with the pupil division pixel unit 12 arranged close to the pupil division (disposed adjacent to the lower right in the example of FIG. 1).
  • the pupil division pixel unit 11 and the pupil division pixel unit 12 constituting the pair respectively receive a pair of light beams that have passed through different areas of the exit pupil of the imaging optical system of the imaging apparatus in which the solid-state imaging device 100 is mounted. It will be a thing.
  • the solid-state imaging device 100 has at least one such pair.
  • the normal pixel unit 10 is a pixel unit that does not have a pupil division function, and receives a light beam that passes through the entire pupil region of the exit pupil of the imaging optical system of the imaging apparatus in which the solid-state imaging device 100 is mounted.
  • FIG. 2 is a schematic cross-sectional view taken along the line AA in the solid-state imaging device 100 shown in FIG. 3 is a schematic cross-sectional view taken along the line BB in the solid-state imaging device 100 shown in FIG.
  • a photodiode (PD) 2 as a photoelectric conversion element is provided for each pixel portion.
  • a charge transfer channel (not shown) for transferring the charge generated and accumulated in each PD2 is formed on the right side of each PD2.
  • a charge transfer electrode 4 for applying a voltage to the charge transfer channel is formed on the charge transfer channel via an insulating film 3 formed on the semiconductor substrate 1.
  • a light shielding film 5 is formed on the charge transfer electrode 4 and the insulating film 3.
  • an opening having the same shape is formed above each PD2.
  • the PD2 region seen from the opening is the light receiving surface of PD2.
  • the center position of the light receiving surface coincides with the position of the optical axis of the condenser lens described later.
  • an upper convex in-layer lens 8, a color filter 9, and a top micro lens 13 are laminated in this order.
  • the charge transfer electrode 4 and the light shielding film 5 are formed in an insulating film 6, and a plurality of upper convex in-layer lenses 8 are formed on the insulating film 6.
  • a planarizing film H is formed on the plurality of upper convex inner lenses 8, and a plurality of color filters 9 are formed on the planarizing film H.
  • the top microlens 13 is formed on the color filter 9.
  • the top microlens 13 is a lens provided on the most light incident side (outside) of the solid-state image sensor 100 among the lenses included in the solid-state image sensor 100.
  • the top micro lens 13 and the upper convex inner lens 8 below the top micro lens 13 constitute a condensing lens that condenses incident light on the PD 2 below the top micro lens 13.
  • each pixel unit included in the solid-state imaging device 100 includes at least a condenser lens and a PD 2 that receives light collected by the condenser lens.
  • the position (position in the light incident direction) where the incident light beam is converged most thinly by the condenser lens included in the solid-state imaging device 100 is not near the surface of the PD 2 (the surface of the semiconductor substrate 1) but rather than the semiconductor substrate 1.
  • the curvature of the condensing lens is determined so as to be on the upper side.
  • the position where the light flux of incident light is converged by the condensing lens included in the solid-state imaging device 100 is referred to as the thinnest converging position of the condensing lens.
  • a light shielding unit 7a that shields a part of the light receiving surface of the PD 2 is formed.
  • the light shielding part 7a is provided in the vicinity of the thinnest convergence position of the condenser lens, and is arranged so as to shield, for example, the right third of the light receiving surface of the PD 2 in a plan view. Therefore, the portion of the light receiving surface of PD2 of pupil division pixel unit 11 that is not shielded by light shielding unit 7a is the optical aperture of PD2 of pupil division pixel unit 11.
  • a light shielding part 7b that shields a part of the light receiving surface of the PD 2 is formed.
  • the light shielding part 7b is provided in the vicinity of the thinnest convergence position of the condenser lens, and is disposed so as to shield, for example, the left third of the light receiving surface of the PD 2 in a plan view. Therefore, the portion of the light receiving surface of PD2 of pupil division pixel unit 12 that is not shielded by light shielding unit 7b is the optical aperture of PD2 of pupil division pixel unit 12.
  • the light shielding parts 7a and 7b are such that the center of the optical aperture of the PD 2 included in each of the two pupil dividing pixel parts 11 and 12 is opposite to the center of the condenser lens of each of the pupil dividing pixel parts 11 and 12. It is provided so as to be eccentric in the direction.
  • the pupil division in the horizontal direction can be performed by the PD2 in the pupil division pixel unit 11 and the PD2 in the pupil division pixel unit 12, and the phase difference information in the horizontal direction can be acquired.
  • FIG. 4 is a diagram showing a case where the light shielding part 7a is provided immediately above the PD 2 of the pupil division pixel part 11 (on the insulating film 3) in the cross-sectional view shown in FIG.
  • both the PD2 of the pupil division pixel unit 11 and the PD2 of the pupil division pixel unit 12 it is preferable that light with an incident angle of 0 ° can be received as much as possible in order to improve sensitivity.
  • the length of the light-shielding portion 7a provided immediately above the PD2 of the pupil division pixel unit 11 is shortened, and the optical aperture of the PD2 of the pupil division pixel unit 11 is widened to the right side.
  • a method for improving the sensitivity of the PD 2 of the dividing pixel unit 11 is conceivable.
  • the optical aperture of PD2 of the pupil division pixel unit 11 and the optical aperture of PD2 of the pupil division pixel unit 12 are closer to each other. Pupil division performance is degraded.
  • the configuration shown in FIG. 2 is the configuration in which the size of the optical aperture of the PD 2 of the pupil division pixel unit 11 is maintained and the light shielding unit 7 a is provided in the vicinity of the thinnest convergence position of the condenser lens. is there.
  • the luminous flux is thinner than that near the surface of PD2.
  • the amount of light with an incident angle of 0 ° shielded by the light shielding portion 7a is smaller than in the case shown in FIG.
  • the sensitivity of the PD 2 of the pupil division pixel unit 11 can be improved while the pupil division performance is the same as the configuration shown in FIG.
  • the light shielding portions 7 a and 7 b for limiting the optical opening of the PD 2 of the pupil division pixel unit 11 and the optical opening of the PD 2 of the pupil division pixel unit 12 include the charge transfer electrode 4. Is formed above. For this reason, the opening on PD2 formed in the light shielding film 5 can be formed in the same shape in all the pixels. Therefore, as compared with the case where the shape of the light shielding film opening is changed for each pixel as shown in FIG.
  • the horizontal position of the light shielding portions 7a and 7b can be easily changed, so that it is easy to take measures against shading.
  • the vicinity of the finest convergence position of the condensing lens provided with the light shielding portion is ideally the finest convergence position itself of the condensing lens.
  • the position where the light-shielding portion is provided is the highest position of the condensing lens as long as the sensitivity and pupil division performance are not significantly reduced. It may be a position slightly shifted up and down from the fine convergence position.
  • 6 to 8 are diagrams showing the results of wave optical simulation for the normal pixel unit 10 shown in FIG.
  • FIG. 6 shows a result when light having an incident angle of 0 ° is incident on the top microlens 13.
  • FIG. 7 shows a result when light having an incident angle of 5 ° (light incident from an oblique upper right) is incident on the top microlens 13.
  • FIG. 8 shows a result when light having an incident angle of 10 ° (light incident from an oblique upper right) is incident on the top microlens 13. 6 to 8, the same components as those shown in FIG. 2 are denoted by the same reference numerals.
  • the pupil division pixel unit 12 shown in FIG. 3 considering the pupil division performance, light incident from the upper right side (incident angle is 5 ° or incident angle is 10 °) is shielded as much as possible. Is preferred.
  • the light flux is converged most narrowly by the condensing lens in the range indicated by the arrow, and the range indicated by the arrow moves toward the light incident side as the incident angle increases. I understand that.
  • the light shielding portions 7a and 7b are arranged as high as possible in order to efficiently shield the oblique light unnecessary for the pupil division pixel portions 11 and 12.
  • the narrowest convergence position of the condenser lens for light having an incident angle of 5 ° or an incident angle of 10 ° exists at a position higher than the charge transfer electrode 4.
  • providing the light-shielding portions 7a and 7b at the finest convergence position of the condenser lens for light having an incident angle of 5 ° or an incident angle of 10 ° is also preferable from the viewpoint of suppressing the above-described deterioration of the process margin.
  • the solid-state image sensor 100 is a CCD type, but the solid-state image sensor 100 may be a MOS type.
  • FIG. 9 is a schematic cross-sectional view taken along the line AA when the solid-state imaging device 100 shown in FIG. 1 is a MOS type.
  • the same components as those in FIG. 9 are identical to FIG. 9 in FIG. 9, the same components as those in FIG.
  • the solid-state imaging device 100 shown in FIG. 9 is similar to that shown in FIG. 3 except that the layer between the insulating film 3 and the upper convex inner lens 8 is changed to a wiring layer 24 including metal wirings 21, 22, and 23.
  • the configuration is the same as that shown in FIG.
  • the wiring layer 24 includes drive wirings, output signal lines, and the like of a MOS circuit (a circuit configured by a MOS transistor that reads a signal corresponding to the charge stored in the PD 2, not shown in FIG. 9) formed on the semiconductor substrate 1.
  • the wiring layer 24 includes three layers of metal wiring 21, metal wiring 22, and metal wiring 23.
  • the finest converging position of the condenser lens is provided at a substantially intermediate depth of the wiring layer 24.
  • the metal wirings 21 to 23 are usually arranged above the PD2 of the pixel unit 10 so as to avoid the PD2.
  • the second-layer metal wiring 22 protrudes to the left above the PD2. A part of the light receiving surface of the PD 2 of the pupil division pixel unit 11 is shielded by the protruding portion of the metal wiring 22.
  • This overhanging portion performs the same function as the light shielding portion 7a shown in FIG.
  • the center of the optical aperture of the PD 2 of the pupil division pixel unit 11 is shifted to the left in the horizontal direction from the center of the condenser lens of the pupil division pixel unit 11.
  • the second-layer metal wiring 22 extends to the upper side of the PD2 toward the right side.
  • the overhanging portion of the metal wiring 22 causes the center of the optical aperture of the PD 2 of the pupil division pixel unit 12 to be shifted to the right in the horizontal direction from the center of the condenser lens of the pupil division pixel unit 12. Yes.
  • the height from the PD 2 to the upper convex in-layer lens 8 is higher than that of the CCD type.
  • the finest converging position of the condensing lens in the wiring layer 24 (preferably substantially in the middle), it is possible to reduce the vignetting of incident light and prevent a decrease in sensitivity.
  • the protruding portion of the metal wiring 22 having the same function as the light shielding portions 7a and 7b at the thinnest convergence position of the condenser lens, both high sensitivity and high pupil division performance can be achieved.
  • the formation of the overhanging portion of the metal wiring 22 can be dealt with only by changing the shape of the mask at the time of forming the metal wiring 22, so that an increase in manufacturing cost can be prevented.
  • FIG. 10 is a diagram showing a modification of the cross-sectional configuration shown in FIG.
  • the solid-state imaging device 100 shown in FIG. 10 is provided with a waveguide for guiding the light collected by the condenser lens to the PD 2 above the PD 2 of all the pixel portions in the configuration shown in FIG.
  • a light shielding portion 33 is provided near the entrance of the waveguide of the pixel portion 11.
  • the light shielding part 33 has the same function as the light shielding part 7a in the configuration shown in FIG.
  • the light shielding unit 33 shields a part of the light receiving surface of the PD 2 of the pupil division pixel unit 11.
  • the center of the optical aperture of the pupil division pixel unit 11 is decentered to the left with respect to the center of the condenser lens of the pupil division pixel unit 11.
  • the waveguide includes an insulating layer 6 and an optical functional layer 31.
  • the optical functional layer 31 only needs to be made of a material that can totally reflect the light collected by the condenser lens at the interface with the insulating layer 6.
  • the optical functional layer 31 is made of an insulating material having a lower refractive index than that of the insulating layer 6 or a metal material.
  • the optical functional layer 31 is formed around the light shielding film 5 covering the charge transfer electrode 4, and an opening is formed above each PD 2.
  • the PD2 region seen from the opening of the optical functional layer 31 is the light receiving surface of PD2.
  • FIG. 11 to 13 are diagrams showing the results of wave optical simulation for the normal pixel unit 10 shown in FIG.
  • FIG. 11 shows a result when light having an incident angle of 0 ° is incident on the top microlens 13.
  • FIG. 12 shows a result when light having an incident angle of 5 ° (light incident from an oblique upper right) is incident on the top microlens 13.
  • FIG. 13 shows a result when light having an incident angle of 10 ° (light incident from an oblique upper right) is incident on the top microlens 13.
  • light having an incident angle of 5 ° and an incident angle of 10 ° bends in the direction opposite to the direction of incidence on the microlens 13 after entering the waveguide and is received by the PD 2. Reach to the surface.
  • the pupil division pixel units 11 and 12 having a waveguide as shown in FIG. 10, by providing the light shielding unit 33 near the entrance of the waveguide, the pupil division performance can be satisfied. Recognize.
  • the position where the light shielding portion 33 is provided should be close to the position where the incident light is converged most finely outside the waveguide (the position where the incident light is converged most narrowly by the condenser lens). preferable.
  • the position where the incident light is converged most thinly by the condensing lens is far away from the entrance of the waveguide, the light that does not enter the waveguide may be emitted.
  • the vicinity of the entrance of the waveguide is the position where the incident light is converged most narrowly by the condenser lens. That is, as shown in FIG. 10, by providing the light shielding portion 33 near the entrance of the waveguide, both high sensitivity and high pupil division performance can be achieved.
  • the configuration of the pupil division pixel unit 12 is obtained by horizontally inverting the pupil division pixel unit 11 shown in FIG.
  • FIG. 14 is a diagram showing a modification of the cross-sectional configuration shown in FIG.
  • the solid-state imaging device 100 shown in FIG. 14 is provided with a waveguide that guides the light condensed by the condenser lens to the PD 2 above each PD 2 in the configuration shown in FIG. In this configuration, a light shielding portion 43 is provided near the entrance of the waveguide.
  • the waveguide includes an insulating layer 44 and an optical functional layer 41.
  • the optical functional layer 41 may be made of a material that can totally reflect the light collected by the condenser lens at the interface with the insulating layer 44.
  • the optical functional layer 41 is made of an insulating material having a lower refractive index than that of the insulating layer 44 or a metal material.
  • the optical function layer 41 is a layer made of a metal material
  • another insulating layer is formed between the optical function layer 41 and the wirings 21 to 23.
  • the optical functional layer 41 is formed so as to cover the wirings 21, 22, and 23, and an opening is formed above the PD2.
  • the light shielding part 43 has the same function as the light shielding part 7a in the configuration shown in FIG.
  • the light shielding unit 43 shields a part of the light receiving surface of the PD 2 of the pupil division pixel unit 11 (the region of PD 2 seen from the opening of the optical function layer 41), and the center of the optical aperture of the pupil division pixel unit 11 is The pupil division pixel unit 11 is decentered to the left with respect to the center of the condenser lens.
  • the position where the incident light is converged most narrowly by the condenser lens is near the entrance of the waveguide.
  • the light shielding portion 43 in the vicinity of the entrance of the waveguide, it is possible to achieve both high sensitivity and high pupil division performance even in a MOS type solid-state imaging device having a waveguide.
  • the configuration of the pupil division pixel unit 12 is obtained by horizontally inverting the pupil division pixel unit 11 shown in FIG.
  • the condenser lens only needs to include at least the top microlens, and the upper convex in-layer lens is omitted. May be.
  • the description has been made on the assumption that it is a surface irradiation type read by a type or MOS type readout circuit.
  • the solid-state imaging device 100 is not limited to the front side irradiation type, and may be a back side irradiation type or a laminated type.
  • the backside illumination type means that light incident from one side of a semiconductor substrate is received by a photodiode in the semiconductor substrate, and a signal corresponding to the charge generated and accumulated in the photodiode is sent to the semiconductor substrate. This is a configuration in which reading is performed by a reading circuit formed on the other surface.
  • the stacked type means that a signal corresponding to the electric charge generated in a photoelectric conversion element (a configuration including a pair of electrodes and a photoelectric conversion layer provided therebetween) stacked on a semiconductor substrate is formed on the semiconductor substrate.
  • the read-out circuit is configured to read out data.
  • FIG. 15 is a schematic cross-sectional view taken along line AA when the solid-state imaging device 100 shown in FIG. 1 is a back-illuminated type.
  • a photodiode (PD) 51 as a photoelectric conversion element is formed in a semiconductor substrate, and a color filter 54 and a top microlens are provided on each PD51 via an insulating layer 53. 55 are stacked in this order.
  • a CCD-type or MOS-type readout circuit (not shown) is formed on the surface of the semiconductor substrate opposite to the light incident side. A signal corresponding to the charge generated and accumulated in the PD 51 is read out by this readout circuit.
  • the top microlens 55 is a lens provided on the outermost side (light incident side) of the solid-state imaging device 100 and has a function of condensing light on the PD 51 below the top microlens 55.
  • the position where the incident light is most finely converged by the top micro lens 55 is between the PD 51 and the color filter 54.
  • a light-shielding part 52 that shields a part of the light-receiving surface of the PD 51 of the pupil division pixel unit 11 is formed at a position where the incident light is most finely converged by the top microlens 55 above the PD 51 of the pupil division pixel unit 11. Has been.
  • the light-shielding portion 52 has a configuration in which the center of the optical aperture of the PD 51 of the pupil division pixel unit 11 is decentered to the left with respect to the center of the top microlens 55 of the pupil division pixel unit 11.
  • the configuration of the pupil division pixel unit 12 is obtained by horizontally inverting the pupil division pixel unit 11 shown in FIG.
  • the position where the incident light is converged most finely by the top microlens 55 as the condenser lens is provided on the light incident side with respect to the PD 51, and the pupil division pixel is located at this position.
  • the light shielding part 52 for determining the optical aperture of the part 11 it is possible to realize a solid-state imaging device that achieves both high sensitivity and high pupil division performance.
  • the position where the incident light is converged most finely can be adjusted.
  • the height between the top micro lens 55 and the PD 51 is adjusted between the top micro lens 55 and the insulating layer 53 (for example, between the color filter 54 and the insulating layer 53). It is preferable to provide a height adjusting layer.
  • the height adjustment layer is made of a material having a low refractive index, the Airy disk spreads and becomes weak against crosstalk.
  • the height adjustment layer is preferably made of a material having a high refractive index (for example, silicon nitride).
  • FIG. 16 is a schematic cross-sectional view taken along the line AA when the solid-state imaging device 100 shown in FIG. 1 is a stacked type.
  • a photoelectric conversion layer 66 is laminated above the semiconductor substrate 61 with an insulating film 63 interposed therebetween.
  • the photoelectric conversion layer 66 has a single configuration common to all the pixel portions.
  • a pixel electrode 65 divided for each pixel portion is formed under the photoelectric conversion layer 66.
  • a readout circuit 62 is formed for each pixel portion on the semiconductor substrate 61 below each pixel electrode 65.
  • the pixel electrode 65 and the readout circuit 62 corresponding to the pixel electrode 65 are electrically connected by a conductive plug 64.
  • a common counter electrode 67 common to all the pixel portions is formed on the photoelectric conversion layer 66.
  • the pixel electrode 65, the upper counter electrode 67, and the photoelectric conversion layer 66 provided between the pixel electrode 65 and the counter electrode 67 constitute a photoelectric conversion element.
  • the photoelectric conversion element may have a configuration in which another functional layer such as a charge blocking layer is provided between the photoelectric conversion layer 66 and at least one of the pixel electrode 65 and the counter electrode 67.
  • another functional layer such as a charge blocking layer is provided between the photoelectric conversion layer 66 and at least one of the pixel electrode 65 and the counter electrode 67.
  • a color filter 70 and a top microlens 71 are laminated in this order for each pixel portion via an insulating layer 69.
  • the position where the incident light is converged most finely by the top microlens 71 is closer to the light incident side than the photoelectric conversion element corresponding to the top microlens 71.
  • a light shielding unit 68 is provided above the photoelectric conversion element of the pupil division pixel unit 11 at a position where incident light is converged most thinly by the top microlens 71 of the pupil division pixel unit 11.
  • the light shielding unit 68 shields a part of the light receiving surface of the photoelectric conversion element of the pupil division pixel unit 11 (a region overlapping the pixel electrode 65 in plan view). With this light shielding portion 68, the center of the optical aperture of the photoelectric conversion element of the pupil division pixel unit 11 is decentered to the left in the horizontal direction with respect to the center of the top microlens 71 of the pupil division pixel unit 11. .
  • the configuration of the pupil division pixel unit 12 is obtained by horizontally inverting the pupil division pixel unit 11 shown in FIG.
  • the position where the incident light is converged most finely by the top microlens 71 as a condenser lens is provided on the light incident side with respect to the photoelectric conversion element, and pupil division is performed at this position.
  • the light shielding unit 68 for determining the optical aperture of the pixel unit 11 it is possible to realize a solid-state imaging device that achieves both sensitivity and pupil division performance.
  • the position where the incident light is converged most finely can be adjusted.
  • the height between the top micro lens 71 and the photoelectric conversion element is adjusted between the top micro lens 71 and the insulating layer 69 (for example, between the color filter 70 and the insulating layer 69). It is preferable to provide a height adjusting layer for the purpose.
  • the height adjustment layer is made of a material having a low refractive index, the Airy disk spreads and becomes weak against crosstalk.
  • the height adjustment layer is preferably made of a material having a high refractive index (for example, silicon nitride).
  • the disclosed solid-state imaging device is a solid-state imaging device including a pair of pupil-dividing pixel units, and the two pupil-dividing pixel units constituting the pair are a photoelectric conversion element and a photoelectric conversion element, respectively. And a condensing lens that condenses light on the photoelectric conversion element, and is provided in the vicinity of a position where the light beam is converged most thinly by the condensing lens, and the photoelectric conversion element of the pupil division pixel unit
  • a light-shielding part that shields a part of the light-receiving surface, and the light-shielding part includes a center of an optical aperture of the photoelectric conversion element included in each of the two pupil-dividing pixel parts constituting the pair.
  • the disclosed solid-state imaging device is of a MOS type and a surface irradiation type, and the position where the light beam is converged most narrowly by the condenser lens is in a wiring layer between the condenser lens and the semiconductor substrate. Is.
  • the light shielding portion is formed by a part of the wiring included in the wiring layer.
  • the disclosed solid-state imaging device is of a CCD type and a surface irradiation type, and the position where the light beam is converged most narrowly by the condenser lens is from a charge transfer electrode for transferring the charge accumulated in the photoelectric conversion device. Is also formed on the top.
  • the disclosed solid-state imaging device is a surface irradiation type, and is provided between the condenser lens and the photoelectric conversion element, and includes a waveguide that guides the light collected by the condenser lens to the photoelectric conversion element.
  • the position at which the light beam is converged most thinly by the condenser lens is in the vicinity of the entrance of the waveguide.
  • the position where the light beam is converged most narrowly by the condensing lens includes that when the incident angle of light incident on the condensing lens is 5 ° or 10 °.
  • the condenser lens includes a top microlens provided closest to the light incident side, and an in-layer lens provided between the top microlens and the photoelectric conversion device.
  • the disclosed solid-state imaging device is a back-illuminated type.
  • the disclosed solid-state imaging device includes an adjustment layer that adjusts the height between the semiconductor substrate on which the photoelectric conversion element is formed and the condenser lens.
  • the photoelectric conversion device includes a pair of electrodes formed above the semiconductor substrate and a photoelectric conversion layer provided between the pair of electrodes.
  • the disclosed solid-state imaging device includes an adjustment layer that adjusts the height between the condenser lens and the photoelectric conversion device.
  • the disclosed imaging device includes the solid-state imaging device.
  • a solid-state image sensor capable of acquiring phase difference information and obtaining a focus position at high speed and with high accuracy regardless of the state of the subject, and this An imaging apparatus including the above can be provided.
  • Solid-state image sensor 2 PD 7a, 7b Light-shielding portion 8 Upper convex in-layer lens 10 Normal pixel portion 11, 12 Pupil division pixel portion 13 Top micro lens

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)

Abstract

L'invention porte sur un capteur d'image à semi-conducteurs, lequel capteur, même lorsqu'il est appliqué à un capteur d'image à semi-conducteurs avec une petite surface, est apte à obtenir des informations de différence de phase rapidement et avec une précision élevée, et à déterminer la position de focalisation, quel que soit l'état d'un sujet. Le capteur d'image à semi-conducteurs (100) contient de multiples paires de pixels pour division de pupille (11, 12). Les pixels pour division de pupille (11, 12) : contiennent chacun un photodétecteur (2), et des lentilles de condenseur (microlentille (13) et lentille entre couches (8)) qui sont disposées au-dessus du photodétecteur (2) et qui focalisent une lumière sur le photodétecteur (2) ; et comportent des sections d'arrêt de lumière (7a, 7b) qui sont disposées au voisinage de l'emplacement où les faisceaux de lumière convergent le plus finement du fait des lentilles de condenseur, et qui bloquent une partie des surfaces de réception de lumière des photodétecteurs (2) des pixels pour la division de pupille (11, 12). Les sections d'arrêt de lumière (7a, 7b) sont disposées de telle manière que les centres des ouvertures optiques des photodétecteurs (2) contenues dans les pixels pour division de pupille (11, 12) sont disposés de façon excentrée par rapport aux centres des lentilles de condenseur contenues dans les pixels pour division de pupille dans la direction opposée.
PCT/JP2011/071008 2010-11-18 2011-09-14 Capteur d'image à semi-conducteurs et dispositif de réalisation d'image WO2012066846A1 (fr)

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JP2010-258397 2010-11-18
JP2010258397A JP2014029351A (ja) 2010-11-18 2010-11-18 固体撮像素子及び撮像装置

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WO2012066846A1 true WO2012066846A1 (fr) 2012-05-24

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JP2014056085A (ja) * 2012-09-12 2014-03-27 Canon Inc 撮像素子及びそれを用いた測距装置
WO2014208047A1 (fr) * 2013-06-24 2014-12-31 パナソニックＩｐマネジメント株式会社 Dispositif de capture d'image à semi-conducteurs et son procédé de production
WO2016002575A1 (fr) * 2014-07-03 2016-01-07 ソニー株式会社 Dispositif d'imagerie à semi-conducteur et dispositif électronique
EP3441919A1 (fr) 2017-08-11 2019-02-13 Schneider Electric Industries SAS Procédé d'échange de données entre les outils d'ingénierie d'un système d'ingénierie ainsi que ??système d'ingénierie permettant la mise en uvre du procédé

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JP6363857B2 (ja) * 2014-03-24 2018-07-25 キヤノン株式会社 撮像素子、撮像装置、画像処理方法、並びにプログラム
TWI742573B (zh) * 2014-11-05 2021-10-11 日商索尼半導體解決方案公司 固體攝像元件及其製造方法以及電子機器
JP6393293B2 (ja) * 2016-06-15 2018-09-19 キヤノン株式会社 撮像素子及び撮像装置

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JP2008071972A (ja) * 2006-09-14 2008-03-27 Canon Inc 撮像素子及び撮像システム
JP2008312073A (ja) * 2007-06-16 2008-12-25 Nikon Corp 固体撮像素子及びこれを用いた撮像装置
JP2010181485A (ja) * 2009-02-03 2010-08-19 Nikon Corp 撮像装置および撮像素子

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JP2008071972A (ja) * 2006-09-14 2008-03-27 Canon Inc 撮像素子及び撮像システム
JP2008312073A (ja) * 2007-06-16 2008-12-25 Nikon Corp 固体撮像素子及びこれを用いた撮像装置
JP2010181485A (ja) * 2009-02-03 2010-08-19 Nikon Corp 撮像装置および撮像素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056085A (ja) * 2012-09-12 2014-03-27 Canon Inc 撮像素子及びそれを用いた測距装置
WO2014208047A1 (fr) * 2013-06-24 2014-12-31 パナソニックＩｐマネジメント株式会社 Dispositif de capture d'image à semi-conducteurs et son procédé de production
JPWO2014208047A1 (ja) * 2013-06-24 2017-02-23 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
WO2016002575A1 (fr) * 2014-07-03 2016-01-07 ソニー株式会社 Dispositif d'imagerie à semi-conducteur et dispositif électronique
US9571721B2 (en) 2014-07-03 2017-02-14 Sony Corporation Solid-state imaging device and electronic apparatus
EP3441919A1 (fr) 2017-08-11 2019-02-13 Schneider Electric Industries SAS Procédé d'échange de données entre les outils d'ingénierie d'un système d'ingénierie ainsi que ??système d'ingénierie permettant la mise en uvre du procédé
US10691364B2 (en) 2017-08-11 2020-06-23 Schneider Electric Industries Sas Method for exchanging data between engineering tools of an engineering system, and engineering system for carrying out the method

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