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WO2012064050A3 - Procédé pour la fabrication d'un substrat en nitrure d'élément du groupe iii utilisant un procédé de décollement lift-off chimique - Google Patents

Procédé pour la fabrication d'un substrat en nitrure d'élément du groupe iii utilisant un procédé de décollement lift-off chimique Download PDF

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Publication number
WO2012064050A3
WO2012064050A3 PCT/KR2011/008370 KR2011008370W WO2012064050A3 WO 2012064050 A3 WO2012064050 A3 WO 2012064050A3 KR 2011008370 W KR2011008370 W KR 2011008370W WO 2012064050 A3 WO2012064050 A3 WO 2012064050A3
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Prior art keywords
group iii
iii nitride
nitride substrate
manufacturing
chemical lift
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PCT/KR2011/008370
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English (en)
Korean (ko)
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WO2012064050A2 (fr
Inventor
주진우
백종협
이승재
이상헌
정탁
전대우
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한국광기술원
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Priority to CN201180047509.6A priority Critical patent/CN103262211B/zh
Priority to US13/877,082 priority patent/US9171717B2/en
Priority to JP2013531517A priority patent/JP5730399B2/ja
Publication of WO2012064050A2 publication Critical patent/WO2012064050A2/fr
Publication of WO2012064050A3 publication Critical patent/WO2012064050A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Weting (AREA)

Abstract

Un exemple spécifique de la présente invention porte sur une couche de nitrure d'élément du groupe III non polaire ou semi-polaire pouvant être utilisée pour des substrats pour divers dispositifs électroniques, les problèmes de substrats en nitrure d'élément du groupe III polaires classiques étant atténués ou résolus par l'utilisation du substrat en nitrure de l'invention et en outre le substrat en nitrure pouvant être fabriqué par un procédé de décollement lift-off chimique.
PCT/KR2011/008370 2010-11-08 2011-11-04 Procédé pour la fabrication d'un substrat en nitrure d'élément du groupe iii utilisant un procédé de décollement lift-off chimique WO2012064050A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180047509.6A CN103262211B (zh) 2010-11-08 2011-11-04 使用化学剥离方法的iii族氮化物基板的制备方法
US13/877,082 US9171717B2 (en) 2010-11-08 2011-11-04 Method for manufacturing a group III nitride substrate using a chemical lift-off process
JP2013531517A JP5730399B2 (ja) 2010-11-08 2011-11-04 化学リフトオフ方法を用いたｉｉｉ族窒化物基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0110517 2010-11-08
KR1020100110517A KR101105868B1 (ko) 2010-11-08 2010-11-08 화학적 리프트 오프 방법을 이용한 ⅰⅰⅰ족 질화물 기판의 제조방법

Publications (2)

Publication Number Publication Date
WO2012064050A2 WO2012064050A2 (fr) 2012-05-18
WO2012064050A3 true WO2012064050A3 (fr) 2012-07-19

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PCT/KR2011/008370 WO2012064050A2 (fr) 2010-11-08 2011-11-04 Procédé pour la fabrication d'un substrat en nitrure d'élément du groupe iii utilisant un procédé de décollement lift-off chimique

Country Status (5)

Country Link
US (1) US9171717B2 (fr)
JP (1) JP5730399B2 (fr)
KR (1) KR101105868B1 (fr)
CN (2) CN103262211B (fr)
WO (1) WO2012064050A2 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101393624B1 (ko) * 2012-01-27 2014-05-12 한국광기술원 적층결함이 제거된 반분극 질화물 소자의 제조방법
JP5319810B2 (ja) * 2012-03-08 2013-10-16 株式会社東芝 窒化物半導体層の製造方法
KR101504731B1 (ko) 2012-11-30 2015-03-23 주식회사 소프트에피 3족 질화물 반도체 적층체
EP2743966B1 (fr) * 2012-12-14 2020-11-25 Seoul Viosys Co., Ltd. Plaquette de couche épitaxiale possédant un vide permettant de séparer un substrat de croissance à partir de celui-ci et dispositif semi-conducteur fabriqué à l'aide de celui-ci
US20150069322A1 (en) * 2013-04-12 2015-03-12 Justin PAYNE Semipolar emitter
JP5957771B2 (ja) * 2013-10-11 2016-07-27 パナソニックＩｐマネジメント株式会社 窒化物半導体積層構造、半導体発光素子および窒化物半導体積層構造を製造する方法
EP3134913A4 (fr) * 2014-04-25 2017-11-01 Texas State University - San Marcos Structure et procede de reformation selective a l'egard d'un materiau
CN105734674A (zh) * 2014-12-08 2016-07-06 郑克勇 磊晶生成结构及其生成方法
EP3255181A4 (fr) 2015-02-06 2018-01-10 Mitsubishi Chemical Corporation MONOCRISTAL DE GaN ET SON PROCÉDÉ DE FABRICATION
WO2018030312A1 (fr) * 2016-08-08 2018-02-15 三菱ケミカル株式会社 PROCÉDÉ DE CROISSANCE DE CRISTAL (GaN) ET SUBSTRAT (GaN) EN PLAN (C)
JP6266742B1 (ja) * 2016-12-20 2018-01-24 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
KR101933778B1 (ko) * 2017-01-23 2018-12-28 경희대학교 산학협력단 질화 갈륨 기판의 제조 방법
KR101873568B1 (ko) * 2017-03-21 2018-07-03 한국광기술원 GaN계 반도체층 성장용 기판 및 그 제조방법
KR102502608B1 (ko) 2018-06-11 2023-02-22 삼성디스플레이 주식회사 발광 소자, 그 제조방법 및 발광 소자를 포함하는 표시 장치
KR102126186B1 (ko) * 2018-06-27 2020-06-24 경희대학교 산학협력단 질화 갈륨 기판의 제조 방법
KR102557754B1 (ko) 2018-08-03 2023-07-20 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
KR102652501B1 (ko) 2018-09-13 2024-03-29 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
CN109560172B (zh) * 2018-10-26 2020-01-10 复旦大学 一种半极性镓氮外延片及其制备方法
CN109378369A (zh) * 2018-12-04 2019-02-22 西安赛富乐斯半导体科技有限公司 具有(20-2-1)面的半极性氮化镓的外延层及其制造方法
CN111243954A (zh) * 2020-01-19 2020-06-05 中国科学院半导体研究所 GaN基常关型高电子迁移率晶体管及制备方法
TWI858336B (zh) * 2021-06-04 2024-10-11 晶成半導體股份有限公司 聲波元件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261032A (ja) * 2000-06-19 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
KR100877774B1 (ko) * 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
KR20090063781A (ko) * 2007-12-14 2009-06-18 삼성전기주식회사 반극성 질화물 단결정 박막의 성장 방법 및 이를 이용한질화물 반도체 발광소자의 제조 방법
US20100261300A1 (en) * 2009-04-08 2010-10-14 Advanced Optoelectronic Technology Inc. Method for separating substrate from semiconductor layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047170A1 (fr) * 1997-04-11 1998-10-22 Nichia Chemical Industries, Ltd. Procede assurant la croissance de semi-conducteurs de nitrure, substrat semi-conducteur de nitrure et dispositif semi-conducteur au nitrure.
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
JP4932121B2 (ja) * 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
JP4117156B2 (ja) * 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
US7524691B2 (en) * 2003-01-20 2009-04-28 Panasonic Corporation Method of manufacturing group III nitride substrate
KR101145755B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
TWI390633B (zh) * 2005-07-13 2013-03-21 Japan Science & Tech Agency 半極性氮化物膜缺陷減少之側向成長方法
JP2009130364A (ja) * 2007-11-23 2009-06-11 Samsung Electro-Mechanics Co Ltd 窒化物半導体発光素子及びその製造方法
JP2009286652A (ja) * 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
JP5313651B2 (ja) 2008-12-17 2013-10-09 スタンレー電気株式会社 半導体素子の製造方法
CN102318039B (zh) * 2009-03-03 2014-04-02 松下电器产业株式会社 氮化镓系化合物半导体的制造方法和半导体发光元件
CN101866880B (zh) * 2009-04-16 2012-11-21 展晶科技(深圳)有限公司 分离基板与半导体层的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261032A (ja) * 2000-06-19 2002-09-13 Nichia Chem Ind Ltd 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
KR100877774B1 (ko) * 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
KR20090063781A (ko) * 2007-12-14 2009-06-18 삼성전기주식회사 반극성 질화물 단결정 박막의 성장 방법 및 이를 이용한질화물 반도체 발광소자의 제조 방법
US20100261300A1 (en) * 2009-04-08 2010-10-14 Advanced Optoelectronic Technology Inc. Method for separating substrate from semiconductor layer

Also Published As

Publication number Publication date
CN105702562A (zh) 2016-06-22
CN103262211B (zh) 2016-06-01
JP5730399B2 (ja) 2015-06-10
CN105702562B (zh) 2020-05-19
KR101105868B1 (ko) 2012-01-16
JP2013544739A (ja) 2013-12-19
US20130193558A1 (en) 2013-08-01
WO2012064050A2 (fr) 2012-05-18
CN103262211A (zh) 2013-08-21
US9171717B2 (en) 2015-10-27

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