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WO2012058184A3 - Plasma processing apparatus with reduced effects of process chamber asymmetry - Google Patents

Plasma processing apparatus with reduced effects of process chamber asymmetry Download PDF

Info

Publication number
WO2012058184A3
WO2012058184A3 PCT/US2011/057577 US2011057577W WO2012058184A3 WO 2012058184 A3 WO2012058184 A3 WO 2012058184A3 US 2011057577 W US2011057577 W US 2011057577W WO 2012058184 A3 WO2012058184 A3 WO 2012058184A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
process chamber
plasma processing
substrate support
disposed
Prior art date
Application number
PCT/US2011/057577
Other languages
French (fr)
Other versions
WO2012058184A2 (en
Inventor
Robert Chebi
Alan Cheshire
Stanley Detmar
Gabriel Roupillard
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020137013348A priority Critical patent/KR20130140035A/en
Priority to CN2011800500026A priority patent/CN103168507A/en
Publication of WO2012058184A2 publication Critical patent/WO2012058184A2/en
Publication of WO2012058184A3 publication Critical patent/WO2012058184A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support.
PCT/US2011/057577 2010-10-28 2011-10-25 Plasma processing apparatus with reduced effects of process chamber asymmetry WO2012058184A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020137013348A KR20130140035A (en) 2010-10-28 2011-10-25 Plasma processing apparatus with reduced effects of process chamber asymmetry
CN2011800500026A CN103168507A (en) 2010-10-28 2011-10-25 Plasma processing apparatus that reduces the effects of processing chamber asymmetry

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40788210P 2010-10-28 2010-10-28
US61/407,882 2010-10-28
US13/240,451 2011-09-22
US13/240,451 US20120103524A1 (en) 2010-10-28 2011-09-22 Plasma processing apparatus with reduced effects of process chamber asymmetry

Publications (2)

Publication Number Publication Date
WO2012058184A2 WO2012058184A2 (en) 2012-05-03
WO2012058184A3 true WO2012058184A3 (en) 2012-06-21

Family

ID=45994687

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/057577 WO2012058184A2 (en) 2010-10-28 2011-10-25 Plasma processing apparatus with reduced effects of process chamber asymmetry

Country Status (5)

Country Link
US (1) US20120103524A1 (en)
KR (1) KR20130140035A (en)
CN (1) CN103168507A (en)
TW (1) TW201234934A (en)
WO (1) WO2012058184A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
KR101411993B1 (en) * 2012-09-25 2014-06-26 (주)젠 Antenna assembly and plasma process chamber having the same
CN105027269B (en) 2013-03-15 2018-01-12 应用材料公司 The productivity ratio of etch system is improved by polymer management
WO2014161199A1 (en) * 2013-04-03 2014-10-09 Wang Dongjun Plasma enhanced atomic layer deposition device
JP6702640B2 (en) 2013-06-17 2020-06-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Enhanced plasma source for plasma reactor
US10249475B2 (en) 2014-04-01 2019-04-02 Applied Materials, Inc. Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
US9714462B2 (en) * 2014-10-08 2017-07-25 Applied Materials, Inc. Vacuum pre-wetting apparatus and methods
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
US10032604B2 (en) 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
US20180005851A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Chamber filler kit for dielectric etch chamber
TWI823442B (en) * 2018-10-28 2023-11-21 美商應用材料股份有限公司 Processing chamber with annealing mini-environment
JP6909824B2 (en) 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor equipment manufacturing methods and programs
CN113133175B (en) * 2019-12-31 2024-02-09 中微半导体设备(上海)股份有限公司 Plasma inductance coil structure, plasma processing equipment and processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299199A (en) * 1999-04-13 2000-10-24 Plasma System Corp Plasma generating device and plasma processing device
KR20050005818A (en) * 2003-07-07 2005-01-15 어댑티브프라즈마테크놀로지 주식회사 Plasma source having low ion flux and high impedance, -and Plasma chamber using the same
KR20050049169A (en) * 2003-11-21 2005-05-25 삼성전자주식회사 System for generating inductively coupled plasma and antenna coil structure for generating inductive electric field
KR20050096392A (en) * 2004-03-30 2005-10-06 어댑티브프라즈마테크놀로지 주식회사 Plasma source coil and plasma chamber using the same
KR20090036125A (en) * 2006-08-28 2009-04-13 베이징 엔엠씨 씨오., 엘티디. Inductively Coupled Coils and Inductively Coupled Plasma Devices Using the Same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888413A (en) * 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
JP2972707B1 (en) * 1998-02-26 1999-11-08 松下電子工業株式会社 Plasma etching apparatus and plasma etching method
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6531029B1 (en) * 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
US20040261718A1 (en) * 2003-06-26 2004-12-30 Kim Nam Hun Plasma source coil for generating plasma and plasma chamber using the same
KR100530596B1 (en) * 2004-03-30 2005-11-23 어댑티브프라즈마테크놀로지 주식회사 Plasma apparatus comprising plasma source coil for high process uniformity on wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299199A (en) * 1999-04-13 2000-10-24 Plasma System Corp Plasma generating device and plasma processing device
KR20050005818A (en) * 2003-07-07 2005-01-15 어댑티브프라즈마테크놀로지 주식회사 Plasma source having low ion flux and high impedance, -and Plasma chamber using the same
KR20050049169A (en) * 2003-11-21 2005-05-25 삼성전자주식회사 System for generating inductively coupled plasma and antenna coil structure for generating inductive electric field
KR20050096392A (en) * 2004-03-30 2005-10-06 어댑티브프라즈마테크놀로지 주식회사 Plasma source coil and plasma chamber using the same
KR20090036125A (en) * 2006-08-28 2009-04-13 베이징 엔엠씨 씨오., 엘티디. Inductively Coupled Coils and Inductively Coupled Plasma Devices Using the Same

Also Published As

Publication number Publication date
WO2012058184A2 (en) 2012-05-03
TW201234934A (en) 2012-08-16
CN103168507A (en) 2013-06-19
KR20130140035A (en) 2013-12-23
US20120103524A1 (en) 2012-05-03

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