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WO2011160819A3 - Method for fabrication of a back side contact solar cell - Google Patents

Method for fabrication of a back side contact solar cell Download PDF

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Publication number
WO2011160819A3
WO2011160819A3 PCT/EP2011/003066 EP2011003066W WO2011160819A3 WO 2011160819 A3 WO2011160819 A3 WO 2011160819A3 EP 2011003066 W EP2011003066 W EP 2011003066W WO 2011160819 A3 WO2011160819 A3 WO 2011160819A3
Authority
WO
WIPO (PCT)
Prior art keywords
phosphorous
back side
phosphorous diffusion
diffusion region
fabrication
Prior art date
Application number
PCT/EP2011/003066
Other languages
French (fr)
Other versions
WO2011160819A2 (en
Inventor
Valentin Dan Mihailetchi
Kristian Peter
Radovan Kopecek
Original Assignee
International Solar Energy Research Center Konstanz E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Solar Energy Research Center Konstanz E.V. filed Critical International Solar Energy Research Center Konstanz E.V.
Publication of WO2011160819A2 publication Critical patent/WO2011160819A2/en
Publication of WO2011160819A3 publication Critical patent/WO2011160819A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Method for fabrication of a back side contact solar cell comprising the steps of simultaneously diffusing a phosphorous dopant on at least part of the front side and at least part of the back side of a crystalline silicon substrate (101), thereby forming a front phosphorous diffusion region (201) and a back phosphorous diffusion region (203) with the same diffusion depth and phosphosilicate glass layers (202, 204) on the front and back phosphorous diffusion regions (201, 203), respectively; forming a first dielectric coating film (305) on at least part of the back side of the substrate; removing at least part of the front-side phosphosilicate glass layer (202); and heating the product thus obtained for a period of time and at a temperature chosen in such a way that said front and back phosphorous diffusion regions (201, 203) expand further into the crystal up to a second diffusion depth that is different for the front phosphorous diffusion region (201A) and the back phosphorous diffusion region (203A), respectively, after the heating.
PCT/EP2011/003066 2010-06-23 2011-06-21 Method for fabrication of a back side contact solar cell WO2011160819A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010024835.5 2010-06-23
DE102010024835A DE102010024835A1 (en) 2010-06-23 2010-06-23 Method for fabrication of a backside contact solar cell

Publications (2)

Publication Number Publication Date
WO2011160819A2 WO2011160819A2 (en) 2011-12-29
WO2011160819A3 true WO2011160819A3 (en) 2013-03-21

Family

ID=44629833

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/003066 WO2011160819A2 (en) 2010-06-23 2011-06-21 Method for fabrication of a back side contact solar cell

Country Status (2)

Country Link
DE (1) DE102010024835A1 (en)
WO (1) WO2011160819A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103606596A (en) * 2013-11-26 2014-02-26 英利集团有限公司 Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013102573A1 (en) 2012-03-13 2013-09-19 centrotherm cell & module GmbH Method for manufacturing solar cell e.g. interdigitated-back contact solar cell, involves cleaning cell substrate, and diffusing boron from boron source layer and diffusing phosphorus into solar cell substrate in common diffusion step
DE102013102574A1 (en) 2012-03-13 2013-09-19 centrotherm cell & module GmbH Method for manufacturing back contact solar cell, involves diffusing second type dopant containing paste into solar cell substrate in common-emitter type impurity regions by sintering second type dopant containing paste
CN107785456A (en) * 2017-09-27 2018-03-09 泰州中来光电科技有限公司 A kind of preparation method of back contact solar cell
CN109809699B (en) * 2019-01-21 2021-05-28 西北大学 Phosphorus-doped glass powder and preparation method and method for preparing front silver paste for solar cells by using the same
CN113948611B (en) * 2021-10-15 2023-12-01 浙江爱旭太阳能科技有限公司 P-type IBC battery, preparation method thereof, assembly and photovoltaic system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
WO2010049230A2 (en) * 2008-10-31 2010-05-06 Bosch Solar Energy Ag Method for producing monocrystalline n-silicon rear contact solar cells
US20100147378A1 (en) * 2008-12-15 2010-06-17 Lg Electronics Inc. Solar cell and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
DE102008030880A1 (en) 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rear contact solar cell with large backside emitter areas and manufacturing method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
WO2010049230A2 (en) * 2008-10-31 2010-05-06 Bosch Solar Energy Ag Method for producing monocrystalline n-silicon rear contact solar cells
US20100147378A1 (en) * 2008-12-15 2010-06-17 Lg Electronics Inc. Solar cell and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103606596A (en) * 2013-11-26 2014-02-26 英利集团有限公司 Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell
CN103606596B (en) * 2013-11-26 2016-08-17 英利集团有限公司 Phosphorus doping silicon chip, its manufacture method, solar battery sheet and preparation method thereof

Also Published As

Publication number Publication date
WO2011160819A2 (en) 2011-12-29
DE102010024835A1 (en) 2011-12-29

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