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WO2011158645A1 - Cellule solaire à couches minces - Google Patents

Cellule solaire à couches minces Download PDF

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Publication number
WO2011158645A1
WO2011158645A1 PCT/JP2011/062495 JP2011062495W WO2011158645A1 WO 2011158645 A1 WO2011158645 A1 WO 2011158645A1 JP 2011062495 W JP2011062495 W JP 2011062495W WO 2011158645 A1 WO2011158645 A1 WO 2011158645A1
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Prior art keywords
zinc oxide
oxide film
solar cell
photoelectric conversion
transparent electrode
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PCT/JP2011/062495
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English (en)
Japanese (ja)
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裕子 多和田
崇 藤林
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株式会社カネカ
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Priority to JP2012520362A priority Critical patent/JP5827224B2/ja
Publication of WO2011158645A1 publication Critical patent/WO2011158645A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a thin film solar cell, and more particularly to a thin film solar cell in which deterioration of photoelectric conversion characteristics during long-term use is suppressed.
  • the surface of the transparent conductive film in contact with the light incident side of the photoelectric conversion unit is made uneven (textured), and the light scattered at the interface enters the photoelectric conversion unit.
  • optical confinement that extends the optical path length has been put into practical use.
  • An example of the transparent conductive film having an uneven surface is a tin oxide (SnO 2 ) film deposited by a thermochemical vapor deposition method (also referred to as “thermal CVD method”).
  • ZnO zinc oxide
  • ITO indium tin oxide
  • a base layer is formed on a light-transmitting insulating substrate such as glass, and a low-pressure thermal CVD method (also referred to as MOCVD method) is formed on the surface under low temperature conditions of 150 ° C. to 200 ° C. It has been proposed to deposit an uneven ZnO film.
  • Patent Document 2 discloses that the resistance of a ZnO film can be significantly reduced by subjecting a ZnO film deposited by MOCVD to a light irradiation treatment in an atmosphere of less than 200 ° C. A decrease in the resistance of the ZnO film is preferable in terms of the transparent electrode characteristics of the solar cell. On the other hand, this reduction in resistance is considered to be caused by an increase in the carrier density inside the ZnO film, and there is a concern about a decrease in light transmittance due to an increase in the carrier density of the transparent conductive film.
  • Patent Document 3 discloses that a long-term use of a solar cell causes discoloration of a glass substrate (hereinafter sometimes referred to as “solarization”) due to ultraviolet irradiation.
  • solarization a glass substrate
  • the intensity of sunlight incident on the solar cell element is reduced due to light absorption by the glass substrate, which causes a problem that the photoelectric conversion efficiency is lowered.
  • This wavelength region corresponds to a photoelectric conversion region of a crystalline silicon photoelectric conversion layer such as thin film polycrystalline silicon or microcrystalline silicon, a germanium photoelectric conversion layer, or a compound semiconductor (CdTe, CIS, CIGS, etc.) photoelectric conversion layer. Therefore, solarization of the transparent electrode located on the light incident side of these photoelectric conversion layers can cause a decrease in conversion efficiency of a thin film solar cell including these photoelectric conversion layers.
  • a crystalline silicon photoelectric conversion layer such as thin film polycrystalline silicon or microcrystalline silicon, a germanium photoelectric conversion layer, or a compound semiconductor (CdTe, CIS, CIGS, etc.) photoelectric conversion layer. Therefore, solarization of the transparent electrode located on the light incident side of these photoelectric conversion layers can cause a decrease in conversion efficiency of a thin film solar cell including these photoelectric conversion layers.
  • an object of the present invention is to suppress a decrease in conversion efficiency due to long-term use in a thin film solar cell having a transparent electrode mainly made of a zinc oxide film and having surface irregularities formed on the light incident side of a photoelectric conversion layer. To do.
  • the content of specific impurities in the zinc oxide film is related to the solarization of the transparent electrode, and the amount of impurities is set within a predetermined range, so that the solarization is suppressed.
  • the present invention has been completed.
  • the thin film solar cell of the present invention includes a transparent electrode including a zinc oxide film, a photoelectric conversion unit including a semiconductor layer having absorption at least at a wavelength of 800 nm or more, and a back electrode in this order.
  • the zinc oxide film has surface irregularities, and the zinc oxide film contains carbon and hydrogen.
  • the content of carbon in the zinc oxide film is preferably 0.10 atomic% or less with respect to zinc, and the content of hydrogen in the zinc oxide film is 1.50 atomic% or less with respect to zinc. It is preferable that Further, the content ratio of carbon and hydrogen in the zinc oxide film is preferably hydrogen / carbon ⁇ 20.
  • the density of the zinc oxide film is 5.0 to 5.8 g / cm 3 .
  • “having surface irregularities” means a case where the height difference of the irregularities on the surface of the zinc oxide film is approximately 10 nm or more, and in the case of having only minute irregularities of less than 10 nm, It shall not be said that "has”.
  • the thin film solar cell of the present invention is expected to improve the initial conversion efficiency due to the light confinement effect because the transparent electrode has surface irregularities. Furthermore, since the carbon and hydrogen concentrations in the zinc oxide film constituting the transparent electrode are within a predetermined range, deterioration in characteristics during long-term use can be suppressed.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of a thin film solar cell according to an embodiment of the present invention.
  • a thin-film solar cell 5 in FIG. 1 includes a transparent electrode 2, a photoelectric conversion unit 3, and a back electrode 4 in this order on a translucent insulating substrate 1.
  • the thin film solar cell 5 is a so-called “super straight type” thin film solar cell into which sunlight (h ⁇ ) used for photoelectric conversion is incident from the translucent insulating substrate 1 side.
  • the photoelectric conversion unit 3 includes a one conductivity type layer 31 on the light incident side of the photoelectric conversion layer 32 and a reverse conductivity type layer 33 on the opposite side to the light incident side.
  • the photoelectric conversion layer 32 includes a semiconductor layer having absorption at least at a wavelength of 800 nm or more.
  • the thin film solar cell 5 is a silicon-based thin film solar cell in which the photoelectric conversion layer 32 is a crystalline silicon-based photoelectric conversion layer.
  • the terms “crystalline” and “microcrystal” include those partially containing amorphous.
  • the translucent insulating substrate 1 is located on the light incident side of the photoelectric conversion unit. Therefore, the translucent insulating substrate is preferably as transparent as possible in order to cause the photoelectric conversion unit to absorb more sunlight.
  • the translucent insulating substrate a glass plate, a translucent plastic film or the like is preferably used.
  • the light incident surface of the translucent insulating substrate is provided with a non-reflective coating so as to reduce the light reflection loss on the light incident surface.
  • the surface on the transparent electrode 2 side of the translucent insulating substrate 1 may have fine surface irregularities in order to improve the adhesion with the transparent electrode 2.
  • the transparent electrode 2 is located closer to the light incident side than the photoelectric conversion unit 3 and includes at least a zinc oxide film.
  • the zinc oxide film has a surface uneven shape.
  • size of the surface asperity of the said zinc oxide film is suitably set according to the kind etc. of a photoelectric converting layer.
  • a transparent electrode in which a transparent electrode 2 including a zinc oxide film is formed on a translucent insulating substrate 1 The substrate preferably has a haze ratio of 10% or more.
  • the substrate with a transparent electrode has a haze ratio of about 20 to 40%. If the surface roughness of the zinc oxide film is too small, a sufficient light confinement effect may not be obtained. On the other hand, if the surface unevenness is too large, it may cause an electrical or mechanical short circuit in the thin film solar cell, which may cause deterioration of the characteristics of the thin film solar cell.
  • the haze ratio is mainly used as an evaluation index of surface irregularities that affects the light confinement effect of the transparent electrode for thin film solar cells.
  • the haze ratio is expressed by (diffuse transmittance / total light transmittance) ⁇ 100 [%] (JIS K7136).
  • the haze ratio is evaluated in a state including the translucent insulating substrate.
  • a zinc oxide film alone may be used, or in addition to a zinc oxide film, for example, a tin oxide film or an indium tin oxide film may be laminated.
  • the zinc oxide film may be mainly composed of zinc oxide. If necessary, other components such as metals such as indium and tin or oxides of these metals may be contained within about 30% by weight, for example. It may be included in the range.
  • the carbon atom concentration in the zinc oxide film constituting the transparent electrode 2 is preferably 0.10 atomic% or less, more preferably 0.06 atomic% or less with respect to zinc. From the viewpoint of suppressing solarization of the zinc oxide film, the carbon atom concentration in the zinc oxide film is ideally 0 atomic%. On the other hand, it is difficult to completely remove carbon atoms from the zinc oxide film, and considering the removal load, the realistic lower limit of the carbon atom concentration in the zinc oxide film is about 0.01 atomic%. is there.
  • the hydrogen atom concentration in the zinc oxide film is preferably 1.50 atomic% or less, more preferably 1.10 atomic% or less with respect to zinc.
  • the hydrogen atom concentration in the zinc oxide film is ideally 0 atomic%.
  • the realistic lower limit of the hydrogen atom concentration in the zinc oxide film is 0.01 atomic%. .
  • the amount of residual impurities in the zinc oxide film can be quantitatively analyzed by secondary ion mass spectrometry (also referred to as SIMS analysis) using a Cs + ion source.
  • Impurities in the zinc oxide film detected by SIMS analysis are mainly carbon and hydrogen, and these are considered to be mainly derived from the raw materials used when the zinc oxide film is formed.
  • a zinc oxide film is formed using alkyl zinc such as diethyl zinc (DEZ) as a raw material, carbon and hydrogen derived from the alkyl group of the alkyl zinc remain as residual impurities in the zinc oxide film. Conceivable.
  • the amount of residual impurities derived from the raw material differs depending on the deposition conditions of the zinc oxide film, and this impurity amount is reduced.
  • the concentration of residual impurities (carbon and hydrogen) in the zinc oxide film is preferably as small as possible from the viewpoint of suppressing solarization.
  • the impurity concentration in the zinc oxide film may have a gentle slope in the film thickness direction.
  • the impurity concentration near the center in the film thickness direction can be regarded as the average value of the entire zinc oxide film.
  • the vicinity of the center in the film thickness direction refers to a range of about 10% with respect to the film thickness. The same applies to the boron concentration described later.
  • the density of crystalline ZnO is 5.8 g / cm 3 (reference value).
  • the density of the zinc oxide film is preferably 5.0 ⁇ 5.8g / cm 3, more preferably 5.2 ⁇ 5.7g / cm 3.
  • the zinc oxide film having a low density has low conductivity due to the influence of gaps and impurities, it is difficult to obtain a resistance value suitable for a thin film solar cell unless the film thickness is increased.
  • the density of the zinc oxide film can be calculated by a combination of the RBS method (Rutherford backscattering method) and the HFS method (hydrogen forward scattering analysis method).
  • the film thickness of zinc oxide to which these analytical methods can be applied is in the range of 200 to 500 nm, which is smaller than the film thickness of a general transparent electrode actually used in a thin film solar cell. Therefore, when determining the density of the zinc oxide film, it is necessary to measure using the zinc oxide film formed with the film thickness within the range that can be analyzed under the same conditions as the transparent electrode actually used in the thin film solar cell. There is.
  • the ratio of hydrogen atom to carbon atom (H / C) in the zinc oxide film is preferably 20.0 or less, more preferably 18.0 or less, and 4.0 or more and 15. More preferably, it is in the range of 0 or less. According to the study by the present inventors, it was found that when the H / C ratio in the zinc oxide film is large, the transmittance in the long wavelength region of the zinc oxide film after ultraviolet irradiation tends to decrease. The reason for this is not clear, but when the content of impurities derived from alkyl groups is large, water molecules, hydroxyl groups, hydrogen atoms, etc. remain in the oxide film together with alkyl groups through hydrogen bonds, etc. It is estimated that the ratio of / C tends to increase.
  • the amount of change in the transmittance of the zinc oxide film due to ultraviolet irradiation varies depending on the spectrum and time of irradiation light, when the predetermined integrated light quantity is reached, the decrease in transmittance ceases and the transmittance tends to be a constant value. .
  • the state where the decrease in transmittance has ended is referred to as a “stabilized state”.
  • membrane is 80% or more in the stabilized state.
  • the short-circuit current density (Jsc) of the thin-film solar cell does not improve, and the conversion efficiency tends to decrease.
  • AM1.5-equivalent light may be irradiated with a light amount of about 300 to 500 mW / cm 2 to shorten the irradiation time until reaching a stabilized state. Note that when the amount of irradiation light is increased, the temperature of the substrate to which light is irradiated increases. Therefore, when performing an acceleration test, the substrate may be cooled so that the substrate temperature is maintained at about 50 ° C.
  • the method for producing a transparent electrode in the present invention is not necessarily limited, but the zinc oxide film constituting the transparent electrode is preferably deposited by a low pressure thermal CVD method. According to the low-pressure thermal CVD method, a zinc oxide film having surface irregularities capable of exhibiting a light confinement effect is formed even at a substrate temperature of 200 ° C. or lower.
  • the zinc oxide film contained in the transparent electrode is, for example, as a raw material gas under a condition that the substrate temperature is 150 ° C. or higher, more preferably 160 ° C. or higher, and the pressure is 5 Pa or higher and less than 100 Pa by, for example, low-pressure thermal CVD.
  • a film is formed by supplying a zinc source, an oxidizing agent, a dopant gas, and a dilution gas into the film forming chamber.
  • the substrate temperature here means the temperature of the surface where the substrate is in contact with the heating part of the film forming apparatus.
  • alkyl zinc such as diethyl zinc (DEZ) or dimethyl zinc
  • water is most preferably used as the oxidizing agent. It is preferable to supply a raw material that is liquid at room temperature and normal pressure, such as DEZ or water, after being vaporized by a method such as heat evaporation, bubbling, or spraying.
  • a rare gas He, Ar, Xe, Kr, Rn
  • nitrogen, hydrogen, or the like is preferably used.
  • a dopant gas for example, a gas containing a group III element such as diborane (B 2 H 6 ) or alkylborane such as trimethylborane, alkylaluminum, or alkylgallium is preferably used. Among these, a dopant gas containing boron is preferable, and diborane is most preferable.
  • the dopant gas is preferably introduced into the film forming chamber after being diluted with a diluent gas such as hydrogen.
  • the source gas is supplied so that the zinc source and the oxidizing agent have a zinc: oxygen stoichiometric ratio of 1: 1 to 1: 5.
  • the DEZ: water ratio is preferably 1: 1 to 1: 5, more preferably 1: 2 to 1: 4.
  • the ratio of zinc and oxygen may be stoichiometrically 1: 1, but by relatively increasing the supply amount of water as an oxidizing agent, The carbon atom concentration and hydrogen atom concentration of can be reduced.
  • the supply amount of the oxidizing agent to the zinc source is excessively large, it may be difficult to form a uniform film, or the H / C ratio in the zinc oxide film may be excessively large.
  • the substrate temperature When depositing a zinc oxide film by low pressure thermal CVD, the substrate temperature should be set high, and an oxidizing agent (eg water) for the zinc source (eg DEZ) within a range that can achieve both formation of surface irregularities and electrical resistance. By increasing the supply amount, the carbon atom concentration and the hydrogen atom concentration in the zinc oxide film can be reduced.
  • the substrate temperature during deposition of the zinc oxide film is preferably 150 ° C. or higher, and more preferably 160 ° C. or higher. If the substrate temperature is excessively high, a zinc oxide film having a desired resistance value tends to be hardly obtained. Therefore, the substrate temperature at the time of depositing the zinc oxide film is preferably 200 ° C. or less, and 180 ° C. or less.
  • the carbon concentration and hydrogen concentration in the film can be lowered by reducing the gas supply amount per unit time when depositing the zinc oxide film. Therefore, the pressure at the time of depositing the zinc oxide film is preferably less than 100 Pa, and more preferably 50 Pa or less. On the other hand, when the gas supply amount is small and the pressure is low, the deposition rate tends to be small. Therefore, the pressure during deposition of the zinc oxide film is preferably 5 Pa or more.
  • the carbon atom concentration and the hydrogen atom concentration in the zinc oxide film can also be obtained by heating the transparent electrode under a non-oxidizing gas atmosphere such as argon. Can be reduced.
  • the conditions for this heat treatment are preferably, for example, a temperature of about 180 ° C. to 250 ° C. and a pressure of about 50 Pa to 500 Pa.
  • the heat treatment time is preferably about 10 minutes to 120 minutes.
  • the supply amount of the dopant gas can be appropriately set so that the transmittance and resistance value of the transparent electrode are in a desired range.
  • the supply amount of the dopant gas is preferably adjusted so that the boron atom concentration in the zinc oxide film is 2.0 ⁇ 10 20 atms / cm 3 or less. .
  • the boron concentration in the zinc oxide film increases, solarization tends to occur in the short wavelength region of 700 nm or less due to ultraviolet irradiation or the like, and the transmittance of the zinc oxide film tends to decrease.
  • the supply amount of B 2 H 6 to DEZ which is a zinc source is 1% or less.
  • the boron atom concentration in the zinc oxide film is small.
  • the zinc oxide film contains about 2.0 ⁇ 10 16 atoms / cm 3 of boron element in the vicinity of the analysis detection limit value. Therefore, the supply amount of B 2 H 6 with respect to DEZ which is a zinc source is preferably 0.05% or more.
  • the amount of boron in the zinc oxide film can also be quantitatively analyzed by secondary ion mass spectrometry (also referred to as SIMS analysis) using a Cs + ion source.
  • Boron detected by SIMS analysis is mainly derived from the dopant gas. Therefore, for example, when B 2 H 6 is used as the dopant gas, it is considered that boron is present in the form of boron atom, borohydride, or a polymer of borohydride in the zinc oxide film.
  • the boron and boron compounds in the zinc oxide film it is not certain which boron having the chemical structure affects the light absorption, but from the viewpoint of suppressing solarization, it is preferable that the number of boron atoms is as small as possible.
  • the average film thickness of the zinc oxide film in the transparent electrode 2 is preferably 0.3 ⁇ m to 3 ⁇ m, more preferably 0.3 ⁇ m to 2 ⁇ m, and further preferably 0.5 ⁇ m to 1.8 ⁇ m. If the zinc oxide film is too thin, it may be difficult to provide the surface of the zinc oxide film with unevenness that effectively contributes to the light confinement effect, or it may be difficult to obtain the conductivity necessary for the transparent electrode. On the other hand, if the zinc oxide film is too thick, light absorption by the zinc oxide film itself increases, so that the amount of light reaching the photoelectric conversion unit decreases and conversion efficiency tends to decrease. Moreover, when the zinc oxide film is too thick, the film forming cost tends to increase due to an increase in the film forming time.
  • the zinc oxide film preferably has a surface irregularity particle size (pitch) of about 50 to 500 nm and an unevenness height of about 20 to 200 nm from the viewpoint of obtaining the light confinement effect of the solar cell. If the surface roughness of the zinc oxide film is too large, an electrical short circuit may occur in the thin film solar cell. Therefore, the height of the unevenness is more preferably 40 to 150 nm, and further preferably 50 to 120 nm.
  • a photoelectric conversion unit 3 is formed on the transparent electrode 2.
  • the photoelectric conversion unit 3 in the present invention preferably includes, as the photoelectric conversion layer 32, a semiconductor layer having absorption in the main wavelength region (400 to 1200 nm) of sunlight.
  • the photoelectric conversion layer 32 is a semiconductor having absorption at least at a wavelength of 800 nm or more. More preferably, it includes a layer.
  • a semiconductor layer having absorption at least at a wavelength of 800 nm or more refers to a semiconductor layer having an extinction coefficient of 2 ⁇ 10 2 cm ⁇ 1 or more in a photon energy region of 1.55 eV or less.
  • semiconductor layers include crystalline silicon-based photoelectric conversion layers such as thin-film polycrystalline silicon and microcrystalline silicon, germanium photoelectric conversion layers, and compound semiconductor (CdTe, CIS, CIGS, etc.) photoelectric conversion layers.
  • the “silicon-based” material includes silicon alloy semiconductor materials containing silicon such as silicon carbide and silicon germanium in addition to silicon.
  • the photoelectric conversion unit 3 has a one conductivity type layer 31 and a reverse conductivity type layer 33 on the light incident side and the back surface side of the photoelectric conversion layer 32, respectively.
  • a crystalline silicon-based photoelectric conversion unit using a crystalline silicon-based thin film as a photoelectric conversion layer 32 has a p-type layer as the one-conductivity-type layer 31 on the light incident side and an n-type layer as the reverse-conductivity-type layer 33. It is preferable that light is incident from the p-type layer side.
  • the crystalline silicon-based photoelectric conversion unit is formed, for example, by sequentially depositing a p-type layer, an i-type layer (photoelectric conversion layer), and an n-type layer by a plasma CVD method.
  • a p-type microcrystalline silicon-based layer doped with 0.01 atomic% or more of boron which is a conductivity-determining impurity atom
  • an intrinsic crystalline silicon layer serving as a photoelectric conversion layer and a conductivity-determining impurity atom.
  • An example is a photoelectric conversion unit in which n-type microcrystalline silicon-based layers doped with 0.01 atomic% or more of phosphorus are deposited in this order.
  • the p-type layer, i-type layer, and n-type layer constituting the photoelectric conversion unit are not limited to the above.
  • an amorphous silicon-based film may be used as the p-type layer.
  • an alloy material such as amorphous or microcrystalline silicon carbide or silicon germanium may be used for the p-type layer.
  • the film thickness of the conductive layer (p-type layer and n-type layer) is preferably 3 nm to 100 nm, more preferably 5 nm to 50 nm.
  • the intrinsic crystalline silicon layer as the photoelectric conversion layer 32 is preferably deposited at a substrate temperature of 300 ° C. or less by a plasma CVD method. By depositing the crystalline silicon layer at a low temperature, a large amount of hydrogen atoms can be contained in the film. Hydrogen atoms have a function of terminating and inactivating defects (dangling bonds) in crystal grain boundaries and crystal grains. Specifically, the hydrogen content of the photoelectric conversion layer 32 is preferably in the range of 1 to 30 atomic%.
  • This layer is preferably formed as a substantially intrinsic semiconductor thin film having a conductivity type determining impurity atom density of 1 ⁇ 10 18 atoms / cm 3 or less.
  • the crystal grains contained in the intrinsic crystalline silicon layer are grown in a columnar shape from the transparent electrode 2 side, and preferably have a (110) preferential orientation plane with respect to the film surface.
  • the film thickness of the intrinsic crystalline silicon layer is preferably 1 ⁇ m or more from the viewpoint of light absorption, and is preferably 10 ⁇ m or less from the viewpoint of suppressing peeling due to internal stress of the crystalline thin film.
  • a crystalline silicon carbide layer that is an alloy material for example, a crystalline material containing 10 atomic% or less of carbon in the photoelectric conversion layer
  • a crystalline silicon carbide layer made of silicon) or a crystalline silicon germanium layer for example, a crystalline silicon germanium layer made of crystalline silicon containing 30 atomic% or less of germanium in the photoelectric conversion layer.
  • the thin film solar cell of the present invention may have one photoelectric conversion unit as shown in FIG. 1, or may be a laminate of a plurality of photoelectric conversion units.
  • a thin film solar cell having a plurality of photoelectric conversion units a first photoelectric conversion unit including a photoelectric conversion layer having absorption in a relatively short wavelength region on the transparent electrode 2, and a relatively long wavelength region
  • the first photoelectric conversion unit disposed on the light incident side is preferably a photoelectric conversion unit having a semiconductor layer having absorption at least at a wavelength of 700 nm or less as a photoelectric conversion layer.
  • a semiconductor layer having absorption at least at a wavelength of 700 nm or less refers to a semiconductor layer having an extinction coefficient of 2 ⁇ 10 2 cm ⁇ 1 or more in a photon energy region of 1.8 eV or more.
  • semiconductor layers include amorphous silicon-based semiconductor layers such as amorphous silicon, amorphous silicon germanium, and amorphous silicon carbide, and crystalline silicon such as thin-film polycrystalline silicon and microcrystalline silicon. Examples thereof include a system semiconductor layer, a germanium semiconductor layer, and a compound (CdTe, CIS, CIGS, etc.) semiconductor layer.
  • a tandem thin film solar cell there is a hybrid thin film solar cell in which an amorphous silicon photoelectric conversion unit and the crystalline silicon photoelectric conversion unit described above are sequentially stacked on a transparent electrode 2.
  • the amorphous photoelectric conversion unit includes a one conductivity type layer, an amorphous photoelectric conversion layer, and a reverse conductivity type layer.
  • As the photoelectric conversion layer of the amorphous photoelectric conversion unit an amorphous silicon-based material having sensitivity to light of about 360 to 800 nm is used, and as the photoelectric conversion layer of the crystalline photoelectric conversion unit, more than amorphous silicon. If a crystalline silicon-based material having sensitivity to long light up to about 1200 nm is used, a thin film solar cell that can effectively use incident light in a wider range can be obtained.
  • the amorphous photoelectric conversion unit can be obtained, for example, by depositing a p-type amorphous silicon-based layer, an intrinsic amorphous silicon-based layer, and an n-type amorphous silicon-based layer in this order by plasma CVD.
  • Each layer constituting the amorphous photoelectric conversion unit is not limited to the above.
  • a microcrystalline silicon-based film or a stacked structure of a microcrystalline silicon-based film and an amorphous silicon-based film may be used as a p-type layer.
  • an alloy material such as silicon carbide or silicon germanium may be used as the photoelectric conversion layer.
  • the intrinsic amorphous silicon-based layer preferably contains 2 to 15% of hydrogen in order to reduce recombination current loss due to defects in the film.
  • the film thickness of the intrinsic amorphous silicon-based layer is desirably 50 nm or more and 500 nm or less.
  • a microcrystalline silicon film may be used as the n-type layer.
  • a tandem-type thin film solar cell in which a plurality of photoelectric conversion units are stacked in this way is because the photoelectric conversion units are connected in series. It is rate-limited.
  • the solarization of the transparent electrode in the short wavelength region of 700 nm or less leads to a decrease in the generated current of the first photoelectric conversion unit disposed on the light incident side, and the first photoelectric conversion unit and the first photoelectric conversion unit The current balance of the two photoelectric conversion units may be lost.
  • the solarization of the transparent electrode is particularly suppressed at a wavelength of 700 nm or less, and the boron concentration in the zinc oxide film is within a predetermined range as described above. It is preferable to do.
  • a back electrode 4 is formed on the photoelectric conversion unit 3.
  • the back electrode for example, at least one metal layer 42 made of one or more materials selected from the group consisting of Al, Ag, Au, Cu, Pt and Cr may be formed by sputtering or vapor deposition. preferable.
  • the conductive oxide layer 41 of SnO 2, ZnO or the like is preferably formed between the photoelectric conversion unit 3 and the metal layer 42.
  • the conductive oxide layer 41 has a function of improving the adhesion between the photoelectric conversion unit 3 and the metal layer 42, increasing the light reflectance of the back electrode 4, and further preventing chemical changes of the photoelectric conversion unit. Have.
  • this invention has a back electrode, a photoelectric conversion unit, and a zinc oxide film
  • the present invention can also be applied to a structure (also referred to as a substrate type) in which transparent electrodes are sequentially deposited. Even in the substrate-type configuration, since the solarization of the transparent electrode including the zinc oxide film is suppressed, a decrease in conversion efficiency during long-term use can be suppressed.
  • Light transmittance Light was incident from the glass substrate side with a spectrophotometer (model number “UV-3100PC” manufactured by Shimadzu Corporation), and the light transmittance at a wavelength of 1000 nm was measured.
  • the amount of impurities near the center in the film thickness direction of the ZnO film is analyzed by SIMS in the film thickness direction (direction perpendicular to the substrate) (primary ion species: Cs + , primary ion acceleration voltage: 14.5 kV, secondary ion polarity: negative). Measured with
  • compositions other than hydrogen were determined by RBS single measurement and analysis using theoretical calculation.
  • the measurement conditions of RBS are incident ion 4 He ++ , incident beam diameter 2 mm, sample current 12 nA, incident energy 2.3 MeV, incident angle 0 degree, scattering angle 160 degree, irradiation dose 50 ⁇ C, chamber vacuum degree 6.7 ⁇ 10 ⁇ It carried out at 5 Pa.
  • RBS / HFS simultaneous measurement was performed, and a composition in the depth direction containing hydrogen was obtained by applying a composition other than hydrogen obtained from RBS single measurement.
  • the measurement conditions were an incident energy of 2.4 MeV, an incident angle of 75 degrees, a scattering angle of 160 degrees, a recoil angle of 30 degrees, and an irradiation amount of 0.1 to 50 ⁇ C.
  • the other conditions were the same as the RBS single measurement described above. In the unit conversion in the depth direction, it is necessary to make assumptions regarding the atomic density.
  • depth (cm) depth (atoms / cm 2 ) / atomic number density (atoms / cm 3 ) so that the ZnO film thickness of the sample coincides with the value measured by the stylus profilometer. )
  • the value of amorphous carbon 10.0 ⁇ 10 22 atoms / cm 3 was used as the atomic number density of the contaminated hydrocarbon on the outermost surface considered to have adhered during the measurement.
  • the bulk density of SiO 2 (quartz): 7.97 ⁇ 10 22 atoms / cm 3 was used as the atomic density of the glass substrate.
  • the density (g / cm 3 ) of the ZnO film was determined from the surface density (atoms / cm 2 ) and the number density (atoms / cm 3 ) of the obtained ZnO film.
  • Example 1 As Example 1, the transparent electrode was formed on the glass substrate, and the board
  • a glass substrate having a thickness of 5 mm and a 125 mm square was used as the translucent insulating substrate 1, and B-doped ZnO was deposited thereon with a thickness of 1.5 ⁇ m as the transparent electrode 2 by low-pressure thermal CVD.
  • the transparent electrode 2 was deposited by a CVD method under reduced pressure conditions with a substrate temperature of 160 ° C., diethyl zinc (DEZ) and water as source gases, and diborane gas as a dopant gas.
  • the water / DEZ flow rate ratio was 1.6, and the diborane / DEZ flow rate ratio was 0.005.
  • Example 2 In Example 2, a substrate with a transparent electrode for a thin-film solar cell was produced in the same manner as in Example 1. However, in the point that the flow ratio of water / DEZ during deposition of the ZnO film was changed to 2.3, Example 1 was different.
  • Example 3 In Example 3, a substrate with a transparent electrode for a thin-film solar cell was produced in the same manner as in Example 2. However, the substrate was different from Example 2 in that the total gas flow rate during ZnO film deposition was 2/3. .
  • Example 4 a substrate with a transparent electrode for a thin film solar cell was produced in the same manner as in Example 1. Thereafter, Ar gas was introduced into a vacuum chamber at 200 ° C., and the substrate with a transparent electrode was heat-treated at a pressure of 100 Pa for 1 hour.
  • Comparative Example 1 a glass substrate having a thickness of 5 mm and a 125 mm square was used as the translucent insulating substrate 1, and Al-doped ZnO was deposited thereon with a thickness of 500 nm by sputtering as the transparent electrode 2.
  • the conditions for depositing the ZnO film were 10 inch ⁇ 2% Al-doped ZnO as a target, and RF power of 400 W in an Ar gas atmosphere with a substrate temperature of 250 ° C.
  • Comparative Example 2 a substrate with a transparent electrode for a thin film solar cell was produced in the same manner as in Example 1. However, the substrate temperature during the formation of the zinc oxide film was changed to 150 ° C., and the water / DEZ flow rate ratio was 3. It was different from Example 1 in that it was changed.
  • Table 1 shows the deposition conditions and evaluation results of the zinc oxide films in Examples 1 to 4 and Comparative Examples 1 and 2, respectively.
  • the transparent electrodes of Examples 1 to 4 have a smaller decrease in transmittance before and after UV irradiation (before and after stabilization) than the transparent electrode of Comparative Example 2, and solarization is suppressed. I understand.
  • the transparent electrode (2% Al-doped ZnO) of Comparative Example 1 formed by the sputtering method does not have solarization but does not have surface irregularities and has a low haze ratio. Therefore, it can be said that the transparent electrode of Comparative Example 1 is not suitable for a thin-film solar cell that utilizes the light confinement effect.
  • Example 2 From the comparison between Example 2 and Example 3, it can be seen that the carbon concentration and the hydrogen concentration in the film can be reduced by reducing the amount of the supply gas when depositing the ZnO film. Further, it can be seen from the comparison between Example 1 and Example 4 that the carbon concentration and the hydrogen concentration can be reduced also by the heat treatment after the deposition of the ZnO film.
  • Example 5 As Example 5, a crystalline silicon-based thin film solar cell as shown in FIG. 1 was produced.
  • the transparent electrode 2 was formed under the conditions of Example 1. That is, on the transparent electrode 2 of the substrate with a transparent electrode for a thin film solar cell obtained in Example 1, a p-type microcrystalline silicon layer 31 with a thickness of 15 nm and an intrinsic crystalline silicon with a thickness of 1.8 ⁇ m are obtained.
  • a conversion layer 32 and an n-type microcrystalline silicon layer 33 having a thickness of 15 nm were sequentially deposited by a plasma CVD method. Thereafter, an Al-doped ZnO conductive oxide layer 41 having a thickness of 90 nm and an Ag metal layer 42 having a thickness of 300 nm were sequentially deposited as the back electrode 4 by sputtering.
  • Example 6 Also in Example 6, a crystalline silicon-based thin film solar cell was produced in the same manner as in Example 5. However, the difference from Example 5 is that the transparent electrode 2 described in Example 2 was applied.
  • Example 7 Also in Example 7, a crystalline silicon-based thin film solar cell was produced in the same manner as in Example 5. However, the difference from Example 5 is that the transparent electrode 2 described in Example 3 was applied.
  • Example 8 In Example 8 as well, a crystalline silicon-based thin film solar cell was produced as in Example 5. However, the difference from Example 5 is that the transparent electrode 2 described in Example 4 was applied.
  • Comparative Example 3 Also in Comparative Example 3, a crystalline silicon-based thin film solar cell was produced in the same manner as in Example 5. However, the difference from Example 5 is that the transparent electrode 2 described in Comparative Example 2 was applied.
  • the thin-film solar cell of the present invention has high initial performance and suppresses the solarization of the transparent electrode, so that deterioration of characteristics during long-term use is suppressed.
  • the transparent electrode for a thin film solar cell of the present invention as obtained in Examples 1 to 4 is suitable as a light incident side transparent electrode of the thin film solar cell.
  • These transparent electrodes are suitably used not only for crystalline silicon thin film solar cells but also for other silicon thin film solar cells, thin film compound solar cells, and the like.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire à couches minces qui ne présente en particulier aucune détérioration des caractéristiques de conversion photoélectrique quand elle est utilisée sur une longue période. La cellule solaire à couches minces spécifiquement décrite comprend, dans cet ordre depuis le côté d'entrée de la lumière, une électrode transparente qui contient un film d'oxyde de zinc, une unité de conversion photoélectrique comprenant une couche semi-conductrice absorbante au moins à une longueur d'onde de 800 nm ou plus, et une électrode arrière. Le film d'oxyde de zinc comporte des évidements et des saillies sur la surface, et contient du carbone et de l'hydrogène. Il est préférable que la teneur en carbone y soit de 0,10 % en atomes ou moins par rapport au zinc, et que la teneur en hydrogène y soit de 1,50 % en atomes ou moins par rapport au zinc.
PCT/JP2011/062495 2010-06-17 2011-05-31 Cellule solaire à couches minces WO2011158645A1 (fr)

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CN103794665A (zh) * 2014-03-04 2014-05-14 南开大学 一种高反射高绒度复合结构背电极及其制备方法

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JP6245568B2 (ja) * 2012-06-01 2017-12-13 株式会社レーザーシステム レーザー加工方法

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JPH0582814A (ja) * 1991-09-24 1993-04-02 Canon Inc 太陽電池
JP2002141525A (ja) * 2000-10-31 2002-05-17 National Institute Of Advanced Industrial & Technology 太陽電池用基板および薄膜太陽電池
WO2008149835A1 (fr) * 2007-06-04 2008-12-11 Kaneka Corporation Cellule solaire à couche mince intégrée et son procédé de fabrication
JP2010034230A (ja) * 2008-07-28 2010-02-12 Sumitomo Metal Mining Co Ltd 薄膜太陽電池及び薄膜太陽電池用表面電極

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JP5243697B2 (ja) * 2006-04-19 2013-07-24 株式会社カネカ 光電変換装置用透明導電膜とその製造方法

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JPH0582814A (ja) * 1991-09-24 1993-04-02 Canon Inc 太陽電池
JP2002141525A (ja) * 2000-10-31 2002-05-17 National Institute Of Advanced Industrial & Technology 太陽電池用基板および薄膜太陽電池
WO2008149835A1 (fr) * 2007-06-04 2008-12-11 Kaneka Corporation Cellule solaire à couche mince intégrée et son procédé de fabrication
JP2010034230A (ja) * 2008-07-28 2010-02-12 Sumitomo Metal Mining Co Ltd 薄膜太陽電池及び薄膜太陽電池用表面電極

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794665A (zh) * 2014-03-04 2014-05-14 南开大学 一种高反射高绒度复合结构背电极及其制备方法

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