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WO2011026129A3 - Agencements de retour par la terre pour radiofréquence (rf) - Google Patents

Agencements de retour par la terre pour radiofréquence (rf) Download PDF

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Publication number
WO2011026129A3
WO2011026129A3 PCT/US2010/047379 US2010047379W WO2011026129A3 WO 2011026129 A3 WO2011026129 A3 WO 2011026129A3 US 2010047379 W US2010047379 W US 2010047379W WO 2011026129 A3 WO2011026129 A3 WO 2011026129A3
Authority
WO
WIPO (PCT)
Prior art keywords
ground return
radio frequency
substrate
return arrangement
support structure
Prior art date
Application number
PCT/US2010/047379
Other languages
English (en)
Other versions
WO2011026129A2 (fr
Inventor
Rajinder Dhindsa
Akira Koshishi
Alexei Marakhtanov
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43628710&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2011026129(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to KR1020217000342A priority Critical patent/KR102219924B1/ko
Priority to KR1020217004951A priority patent/KR102240849B1/ko
Priority to KR1020177031995A priority patent/KR20170125419A/ko
Priority to KR1020197024878A priority patent/KR102233437B1/ko
Priority to KR1020127005375A priority patent/KR101854922B1/ko
Priority to KR1020217008661A priority patent/KR102285582B1/ko
Priority to KR1020197024870A priority patent/KR102164678B1/ko
Priority to KR1020187012209A priority patent/KR20180049208A/ko
Priority to SG2012008280A priority patent/SG178286A1/en
Priority to KR1020207028516A priority patent/KR102201934B1/ko
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2012527106A priority patent/JP5745519B2/ja
Priority to CN201080037830.1A priority patent/CN102484063B/zh
Publication of WO2011026129A2 publication Critical patent/WO2011026129A2/fr
Publication of WO2011026129A3 publication Critical patent/WO2011026129A3/fr

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807Construction (includes replacing parts of the apparatus)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Cette invention concerne un agencement de retour par la terre pour radiofréquence (RF) conçu pour fournir un chemin de retour RF à faible impédance à un courant RF dans une chambre de traitement d'une chambre de traitement par plasma lors du traitement d'un substrat. L'agencement de retour par la terre pour RF comprend une série d'anneaux de confinement configurée pour entourer un volume de chambre confiné qui est configuré pour entretenir un plasma pour la gravure du substrat au cours du traitement du substrat. L'agencement de retour par la terre pour RF comprend en outre une structure de support d'électrode inférieure. L'agencement de retour par la terre pour RF comprend par ailleurs un composant à contact RF, qui fournit un contact RF entre la série d'anneaux de confinement et la structure de support d'électrode inférieure de telle sorte que le chemin de retour RF à faible impédance facilite le retour du courant RF vers une source RF.
PCT/US2010/047379 2009-08-31 2010-08-31 Agencements de retour par la terre pour radiofréquence (rf) WO2011026129A2 (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
CN201080037830.1A CN102484063B (zh) 2009-08-31 2010-08-31 射频(rf)接地返回装置
KR1020197024870A KR102164678B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020177031995A KR20170125419A (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020197024878A KR102233437B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020127005375A KR101854922B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020217008661A KR102285582B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
SG2012008280A SG178286A1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020217000342A KR102219924B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020187012209A KR20180049208A (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020207028516A KR102201934B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
KR1020217004951A KR102240849B1 (ko) 2009-08-31 2010-08-31 무선 주파수 (rf) 접지 복귀 장치들
JP2012527106A JP5745519B2 (ja) 2009-08-31 2010-08-31 高周波(rf)接地帰還構成

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23867009P 2009-08-31 2009-08-31
US61/238,670 2009-08-31

Publications (2)

Publication Number Publication Date
WO2011026129A2 WO2011026129A2 (fr) 2011-03-03
WO2011026129A3 true WO2011026129A3 (fr) 2011-06-16

Family

ID=43628710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047379 WO2011026129A2 (fr) 2009-08-31 2010-08-31 Agencements de retour par la terre pour radiofréquence (rf)

Country Status (7)

Country Link
US (4) US9779916B2 (fr)
JP (1) JP5745519B2 (fr)
KR (9) KR20180049208A (fr)
CN (1) CN102484063B (fr)
SG (1) SG178286A1 (fr)
TW (1) TWI527114B (fr)
WO (1) WO2011026129A2 (fr)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
KR20180049208A (ko) * 2009-08-31 2018-05-10 램 리써치 코포레이션 무선 주파수 (rf) 접지 복귀 장치들
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションLam Research Corporation シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
US20120073752A1 (en) * 2010-09-24 2012-03-29 Memc Electronic Materials, Inc. Adapter Ring For Silicon Electrode
US9117867B2 (en) * 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
KR102011535B1 (ko) * 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US8847495B2 (en) 2011-11-29 2014-09-30 Lam Research Corporation Movable grounding arrangements in a plasma processing chamber and methods therefor
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US20140060739A1 (en) * 2012-08-31 2014-03-06 Rajinder Dhindsa Rf ground return in plasma processing systems and methods therefor
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9401264B2 (en) * 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
WO2015156951A1 (fr) * 2014-04-09 2015-10-15 Applied Materials, Inc. Architecture de conception de corps de chambre symétrique permettant d'envisager un volume de traitement variable à uniformité d'écoulement/conductance de gaz améliorées
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10134615B2 (en) * 2015-02-13 2018-11-20 Applied Materials, Inc. Substrate support with improved RF return
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN106920724B (zh) * 2015-12-24 2019-05-03 中微半导体设备(上海)股份有限公司 改善刻蚀对称性的等离子处理装置及调节方法
CN107369604B (zh) * 2016-05-12 2019-10-11 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN108206143B (zh) * 2016-12-16 2020-09-25 中微半导体设备(上海)股份有限公司 一种等离子处理器、刻蚀均匀性调节系统及方法
US11011357B2 (en) 2017-02-21 2021-05-18 Applied Materials, Inc. Methods and apparatus for multi-cathode substrate processing
CN108538745B (zh) * 2017-03-01 2022-01-07 北京北方华创微电子装备有限公司 反应腔室
KR102007390B1 (ko) 2017-09-27 2019-10-08 이충열 짐벌
CN118380371A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
KR102509641B1 (ko) * 2018-08-28 2023-03-16 삼성전자주식회사 플라즈마 챔버의 rf 센싱 장치 및 이를 포함하는 플라즈마 챔버
KR102624708B1 (ko) * 2018-10-22 2024-01-15 주식회사 선익시스템 플라즈마 처리 장치
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111383893B (zh) * 2018-12-29 2023-03-24 中微半导体设备(上海)股份有限公司 一种等离子体处理器及等离子体控制方法
JP7264710B2 (ja) * 2019-04-23 2023-04-25 株式会社アルバック プラズマ処理装置
JP7245107B2 (ja) * 2019-04-23 2023-03-23 株式会社アルバック プラズマ処理装置
KR102102132B1 (ko) * 2019-07-03 2020-04-20 주식회사 테크놀로지메이컬스 반도체 식각장치의 결합형 실리콘 링
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
CN112786420B (zh) * 2019-11-07 2023-03-07 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其处理基片的方法
CN110911262B (zh) * 2019-11-12 2022-07-22 北京北方华创微电子装备有限公司 电感耦合等离子体系统
CN112838040B (zh) * 2019-11-25 2023-10-20 中微半导体设备(上海)股份有限公司 一种晶圆夹持装置和等离子体处理设备
US12064171B2 (en) * 2019-12-05 2024-08-20 Megadyne Medical Products, Inc. Electrical return connections for electrosurgical systems
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
USD979524S1 (en) 2020-03-19 2023-02-28 Applied Materials, Inc. Confinement liner for a substrate processing chamber
USD943539S1 (en) 2020-03-19 2022-02-15 Applied Materials, Inc. Confinement plate for a substrate processing chamber
US11380524B2 (en) 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
TW202234461A (zh) * 2020-05-01 2022-09-01 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
CN111446146A (zh) * 2020-05-23 2020-07-24 上海邦芯半导体设备有限公司 等离子约束装置及等离子体设备
US20220084796A1 (en) * 2020-09-11 2022-03-17 Applied Materials, Inc. Plasma source with floating electrodes
CN115917702A (zh) 2020-10-30 2023-04-04 朗姆研究公司 磨损补偿约束环
KR102658863B1 (ko) * 2021-02-12 2024-04-17 램 리써치 코포레이션 C-슈라우드의 기계적 강도 또는 수명에 영향을 주지 않고 플라즈마 균일성을 위한 c-슈라우드 조정
KR102549935B1 (ko) * 2021-04-28 2023-06-30 주식회사 월덱스 플라즈마 에칭장치용 다체형 한정 링
CN114023620B (zh) * 2021-10-29 2023-07-14 德鸿半导体设备(浙江)有限公司 一种用于处理基片的处理站
US20250118577A1 (en) * 2023-10-10 2025-04-10 Applied Materials, Inc. Ceramic rf return kit design

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277237B1 (en) * 1998-09-30 2001-08-21 Lam Research Corporation Chamber liner for semiconductor process chambers
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US20070284045A1 (en) * 2006-06-08 2007-12-13 Andreas Fischer Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US20090200269A1 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Protective coating for a plasma processing chamber part and a method of use

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026667A (ja) 1983-07-22 1985-02-09 Canon Inc 堆積膜形成装置
US5209803A (en) 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
JPH05206069A (ja) 1992-01-29 1993-08-13 Fujitsu Ltd プラズマエッチング法及びプラズマエッチング装置
US5525159A (en) 1993-12-17 1996-06-11 Tokyo Electron Limited Plasma process apparatus
TW357404B (en) 1993-12-24 1999-05-01 Tokyo Electron Ltd Apparatus and method for processing of plasma
US5523261A (en) 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
EP0821395A3 (fr) * 1996-07-19 1998-03-25 Tokyo Electron Limited Appareil de traítement par plasma
JP3122617B2 (ja) * 1996-07-19 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5916454A (en) 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
JP2000030896A (ja) * 1998-07-10 2000-01-28 Anelva Corp プラズマ閉込め装置
JP3476687B2 (ja) * 1998-09-21 2003-12-10 東京エレクトロン株式会社 プラズマ処理装置
JP2001000789A (ja) * 1999-06-24 2001-01-09 Sanyo Electric Co Ltd 衣類乾燥機
US6350317B1 (en) 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
JP3718093B2 (ja) * 2000-01-20 2005-11-16 ローム株式会社 半導体製造装置
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
JP2002270598A (ja) 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
US6974523B2 (en) * 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
WO2007142690A2 (fr) * 2005-11-04 2007-12-13 Applied Materials, Inc. Appareil et procédé de dépôt de couche atomique améliorée au plasma
US8104428B2 (en) * 2006-03-23 2012-01-31 Tokyo Electron Limited Plasma processing apparatus
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8076247B2 (en) * 2007-01-30 2011-12-13 Applied Materials, Inc. Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
KR20180049208A (ko) * 2009-08-31 2018-05-10 램 리써치 코포레이션 무선 주파수 (rf) 접지 복귀 장치들
US8826855B2 (en) * 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
KR102011535B1 (ko) * 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277237B1 (en) * 1998-09-30 2001-08-21 Lam Research Corporation Chamber liner for semiconductor process chambers
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US20070284045A1 (en) * 2006-06-08 2007-12-13 Andreas Fischer Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US20090200269A1 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Protective coating for a plasma processing chamber part and a method of use

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