WO2011026129A3 - Agencements de retour par la terre pour radiofréquence (rf) - Google Patents
Agencements de retour par la terre pour radiofréquence (rf) Download PDFInfo
- Publication number
- WO2011026129A3 WO2011026129A3 PCT/US2010/047379 US2010047379W WO2011026129A3 WO 2011026129 A3 WO2011026129 A3 WO 2011026129A3 US 2010047379 W US2010047379 W US 2010047379W WO 2011026129 A3 WO2011026129 A3 WO 2011026129A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ground return
- radio frequency
- substrate
- return arrangement
- support structure
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080037830.1A CN102484063B (zh) | 2009-08-31 | 2010-08-31 | 射频(rf)接地返回装置 |
KR1020197024870A KR102164678B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020177031995A KR20170125419A (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020197024878A KR102233437B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020127005375A KR101854922B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020217008661A KR102285582B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
SG2012008280A SG178286A1 (en) | 2009-08-31 | 2010-08-31 | Radio frequency (rf) ground return arrangements |
KR1020217000342A KR102219924B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020187012209A KR20180049208A (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020207028516A KR102201934B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
KR1020217004951A KR102240849B1 (ko) | 2009-08-31 | 2010-08-31 | 무선 주파수 (rf) 접지 복귀 장치들 |
JP2012527106A JP5745519B2 (ja) | 2009-08-31 | 2010-08-31 | 高周波(rf)接地帰還構成 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23867009P | 2009-08-31 | 2009-08-31 | |
US61/238,670 | 2009-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011026129A2 WO2011026129A2 (fr) | 2011-03-03 |
WO2011026129A3 true WO2011026129A3 (fr) | 2011-06-16 |
Family
ID=43628710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/047379 WO2011026129A2 (fr) | 2009-08-31 | 2010-08-31 | Agencements de retour par la terre pour radiofréquence (rf) |
Country Status (7)
Country | Link |
---|---|
US (4) | US9779916B2 (fr) |
JP (1) | JP5745519B2 (fr) |
KR (9) | KR20180049208A (fr) |
CN (1) | CN102484063B (fr) |
SG (1) | SG178286A1 (fr) |
TW (1) | TWI527114B (fr) |
WO (1) | WO2011026129A2 (fr) |
Families Citing this family (52)
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US9337004B2 (en) * | 2009-04-06 | 2016-05-10 | Lam Research Corporation | Grounded confinement ring having large surface area |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
KR20180049208A (ko) * | 2009-08-31 | 2018-05-10 | 램 리써치 코포레이션 | 무선 주파수 (rf) 접지 복귀 장치들 |
JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
US20120073752A1 (en) * | 2010-09-24 | 2012-03-29 | Memc Electronic Materials, Inc. | Adapter Ring For Silicon Electrode |
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US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
KR102011535B1 (ko) * | 2011-11-24 | 2019-08-16 | 램 리써치 코포레이션 | 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버 |
US8847495B2 (en) | 2011-11-29 | 2014-09-30 | Lam Research Corporation | Movable grounding arrangements in a plasma processing chamber and methods therefor |
US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
US20140060739A1 (en) * | 2012-08-31 | 2014-03-06 | Rajinder Dhindsa | Rf ground return in plasma processing systems and methods therefor |
US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
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US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US10134615B2 (en) * | 2015-02-13 | 2018-11-20 | Applied Materials, Inc. | Substrate support with improved RF return |
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CN108206143B (zh) * | 2016-12-16 | 2020-09-25 | 中微半导体设备(上海)股份有限公司 | 一种等离子处理器、刻蚀均匀性调节系统及方法 |
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KR102007390B1 (ko) | 2017-09-27 | 2019-10-08 | 이충열 | 짐벌 |
CN118380371A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
US11127572B2 (en) | 2018-08-07 | 2021-09-21 | Silfex, Inc. | L-shaped plasma confinement ring for plasma chambers |
KR102509641B1 (ko) * | 2018-08-28 | 2023-03-16 | 삼성전자주식회사 | 플라즈마 챔버의 rf 센싱 장치 및 이를 포함하는 플라즈마 챔버 |
KR102624708B1 (ko) * | 2018-10-22 | 2024-01-15 | 주식회사 선익시스템 | 플라즈마 처리 장치 |
CN111326387B (zh) * | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
CN111326389B (zh) * | 2018-12-17 | 2023-06-16 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
CN111383893B (zh) * | 2018-12-29 | 2023-03-24 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及等离子体控制方法 |
JP7264710B2 (ja) * | 2019-04-23 | 2023-04-25 | 株式会社アルバック | プラズマ処理装置 |
JP7245107B2 (ja) * | 2019-04-23 | 2023-03-23 | 株式会社アルバック | プラズマ処理装置 |
KR102102132B1 (ko) * | 2019-07-03 | 2020-04-20 | 주식회사 테크놀로지메이컬스 | 반도체 식각장치의 결합형 실리콘 링 |
JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
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CN111446146A (zh) * | 2020-05-23 | 2020-07-24 | 上海邦芯半导体设备有限公司 | 等离子约束装置及等离子体设备 |
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CN115917702A (zh) | 2020-10-30 | 2023-04-04 | 朗姆研究公司 | 磨损补偿约束环 |
KR102658863B1 (ko) * | 2021-02-12 | 2024-04-17 | 램 리써치 코포레이션 | C-슈라우드의 기계적 강도 또는 수명에 영향을 주지 않고 플라즈마 균일성을 위한 c-슈라우드 조정 |
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KR20180049208A (ko) * | 2009-08-31 | 2018-05-10 | 램 리써치 코포레이션 | 무선 주파수 (rf) 접지 복귀 장치들 |
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2010
- 2010-08-31 KR KR1020187012209A patent/KR20180049208A/ko not_active Ceased
- 2010-08-31 KR KR1020217004951A patent/KR102240849B1/ko active Active
- 2010-08-31 JP JP2012527106A patent/JP5745519B2/ja active Active
- 2010-08-31 KR KR1020197024878A patent/KR102233437B1/ko active Active
- 2010-08-31 KR KR1020197024870A patent/KR102164678B1/ko active Active
- 2010-08-31 KR KR1020207028516A patent/KR102201934B1/ko active Active
- 2010-08-31 CN CN201080037830.1A patent/CN102484063B/zh active Active
- 2010-08-31 KR KR1020177031995A patent/KR20170125419A/ko not_active Ceased
- 2010-08-31 WO PCT/US2010/047379 patent/WO2011026129A2/fr active Application Filing
- 2010-08-31 KR KR1020127005375A patent/KR101854922B1/ko active Active
- 2010-08-31 US US12/872,984 patent/US9779916B2/en active Active
- 2010-08-31 SG SG2012008280A patent/SG178286A1/en unknown
- 2010-08-31 KR KR1020217008661A patent/KR102285582B1/ko active Active
- 2010-08-31 TW TW099129273A patent/TWI527114B/zh active
- 2010-08-31 KR KR1020217000342A patent/KR102219924B1/ko active Active
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2017
- 2017-08-04 US US15/669,742 patent/US10720314B2/en active Active
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2020
- 2020-06-11 US US16/899,533 patent/US11342166B2/en active Active
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2022
- 2022-04-26 US US17/729,967 patent/US11791140B2/en active Active
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US6277237B1 (en) * | 1998-09-30 | 2001-08-21 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
US6602381B1 (en) * | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
US20070284045A1 (en) * | 2006-06-08 | 2007-12-13 | Andreas Fischer | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber |
US20090200269A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Protective coating for a plasma processing chamber part and a method of use |
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KR20190102098A (ko) | 2019-09-02 |
KR20210021151A (ko) | 2021-02-24 |
KR102233437B1 (ko) | 2021-03-26 |
TWI527114B (zh) | 2016-03-21 |
KR102164678B1 (ko) | 2020-10-12 |
KR20200117074A (ko) | 2020-10-13 |
SG178286A1 (en) | 2012-03-29 |
KR101854922B1 (ko) | 2018-05-04 |
KR20210006009A (ko) | 2021-01-15 |
US20220254614A1 (en) | 2022-08-11 |
US11342166B2 (en) | 2022-05-24 |
US10720314B2 (en) | 2020-07-21 |
KR20170125419A (ko) | 2017-11-14 |
KR102219924B1 (ko) | 2021-02-23 |
TW201130037A (en) | 2011-09-01 |
KR20180049208A (ko) | 2018-05-10 |
US20170330735A1 (en) | 2017-11-16 |
CN102484063A (zh) | 2012-05-30 |
JP5745519B2 (ja) | 2015-07-08 |
CN102484063B (zh) | 2015-11-25 |
KR102240849B1 (ko) | 2021-04-14 |
US11791140B2 (en) | 2023-10-17 |
WO2011026129A2 (fr) | 2011-03-03 |
KR20190101509A (ko) | 2019-08-30 |
KR102285582B1 (ko) | 2021-08-03 |
US20200303171A1 (en) | 2020-09-24 |
KR20210034704A (ko) | 2021-03-30 |
KR102201934B1 (ko) | 2021-01-11 |
JP2013503496A (ja) | 2013-01-31 |
US20110100552A1 (en) | 2011-05-05 |
US9779916B2 (en) | 2017-10-03 |
KR20120060834A (ko) | 2012-06-12 |
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