WO2011076044A1 - Manufacturing method of led module - Google Patents

Abstract

A manufacturing method of an LED module is provided. The method comprises the following steps: (a) preparing an adhesive film; (b) preparing a light-emitting grain; (c) coating a curable adhesive on one side of the adhesive film, and adhering the light-emitting grain to the adhesive film through the curable adhesive; (d) curing the curable adhesive and reducing the adhesive viscosity between the light-emitting grain and the adhesive film;(e) pushing the other side of the adhesive film to separate the light-emitting grain from the adhesive film; and (f) packaging the light-emitting grain and completing the LED module. And these steps further include: (g) before step (a), growing in order an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on a wafer substrate, whereby forming an epitaxial layer on the wafer substrate; (h) curring the wafer substrate with the epitaxial layer into plural single light-emitting grains; and (i) selecting qualified light-emitting grains from the plural single light-emitting grains acquired in the step (h).

Description

 LED module manufacturing method

TECHNICAL FIELD The present invention relates to a method of fabricating a flip-chip light emitting diode module.

Background technique

Generally speaking, there are quite a lot of types and types of illuminating devices on the market. However, in terms of the next generation of green environmental protection and energy saving, Light Emitting Diode (LED) has more power saving, small size, and good stability. With the advantages of reliability, especially white light-emitting diodes, LEDs are widely used in street lamps, tunnel lights, flashlights, signage billboards, home lighting and backlights for LCD panels. In addition, in order to achieve the goal of brighter and more power-saving, LED package also needs good heat dissipation and light extraction efficiency, especially in the aspect of heat dissipation. If the heat is not discharged in real time, hoarding The heat in the LED has a negative impact on its characteristics, service life and reliability. Optical design is also an important part of the packaging process. How to effectively derive the light, the angle of illumination and the direction are the key points of the design. . For example, the conventional lead frame package structure can be mainly subjected to procedures such as die bonding, wire bonding, and molding, and the light-emitting die includes a sapphire substrate, an N-type gallium nitride ohm contact layer, a light-emitting layer, and a P-type. a gallium nitride ohm contact layer and a light-transmitting conductive layer, and a P-type electrode pad and an N-type electrode pad are respectively grown on the light-transmitting conductive layer and the N-type gallium nitride ohmic contact layer, wherein the solid crystal is first After one side surface of the sapphire substrate without the epitaxial layer is fixed on the lead frame by using a silver paste or a solder paste such as a high thermal conductivity solder paste or a gold tin solder, the both ends of the gold wire or the aluminum wire are thermally pressed. They are respectively connected to the illuminating crystal grain and the lead frame or the substrate, and are coated with the phosphor on the illuminating granules, and then the epoxy resin is used to protect the chip by heating, and the crosslinking reaction is heated to increase the hardness and reduce the hygroscopicity. However, this kind of packaging method makes the heat dissipation of the luminescent film often limited by the sapphire substrate with low heat dissipation coefficient, and the thickness thereof is thicker, and the overall heat transfer difficulty is further improved, and part of the light emitted by the luminescent layer must be made of a P-type electrode. Padded Through the light-transmitting conductive layer side toward the phosphor and an epoxy resin, resulting in the P-type electrode pad itself It will shield part of the light-emitting surface and reduce the luminous efficiency of the LED. Therefore, in order to solve the disadvantage of reduced luminous efficiency due to shielding of the electrode pad, a manufacturer has improved the effective light-emitting area by using a Flip-Chip package, which is a sapphire of a gallium nitride-based light-emitting diode. A buffer layer and an N-type gallium nitride ohmic contact layer are sequentially grown on the substrate, and a light-emitting layer and a P-type gallium nitride ohmic contact layer are grown in the center, and the P-type gallium nitride ohmic contact layer is The P-type electrode pad is connected to the external heat-dissipating substrate, and the N-type electrode is grown on the two sides of the light-emitting layer, wherein an N-type electrode is connected to the external heat-dissipating substrate through the N-type electrode pad, because the main light-emitting surface is Unshielded light can increase the luminous efficiency of the LED; in addition, some companies can combine multiple illuminating dies on a gallium nitride (GaN) substrate or a silicon substrate, and silver can be used for the gallium nitride substrate or the silicon substrate. After bonding materials such as glue and solder metal are fixed on the silver-plated copper material, the heat generated by the light-emitting diode can be quickly transmitted to the good heat dissipation coefficient by the electrode pad in the flip-chip structure through the gallium nitride substrate or the silicon substrate. of The material is dissipated to the outside, which can replace the sapphire substrate, improve the heat transfer effect, etc., and improve the overall package heat dissipation effect. However, the material cost of this method is often much higher than that of the sapphire substrate, and the manufacturer still has cost considerations. The main use of sapphire substrates. The LED manufacturing process can be divided into epitaxial forming, cutting, crystal selecting, filming, detaching, die attaching and flip-chip packaging processes, in which tens of thousands of luminescent crystal grains can be cut after epitaxial forming, and then classified. The crystal is attached to the film (blue glue), and can be used as a wholesale optical grain stock, or can be subsequently separated from the film, and transported by a vacuum chuck to perform solid crystal bonding, adhesion, and coating of the subsequent light-emitting crystal grains. The process of crystal encapsulation, etc., except that the detachment process uses the ejector pin of the separating device to push the film on the film to separate the illuminating die and the film one by one. Since the illuminating die has a certain adhesion to the film, the metal material is made. The thimble must be subjected to a large pushing force to separate the luminescent film from the film, and due to the epitaxial layer on the luminescent film (such as buffer layer, N-type GaN ohmic contact layer, The luminescent layer and the P-type GaN ohmic contact layer are relatively thin compared to the thickness of the sapphire substrate. However, if the position of the thimble is not good, the pushing force is too large, or other parameters are poorly set, the epitaxial layer cannot be formed. From excessive impact energy (Impact Energy), which led to situations such as light-emitting grains rupture or damage occurs, the product defect rate will also increase significantly, while increasing costs on overall manufacturing.

SUMMARY OF THE INVENTION The inventors have in view of the above known light-emitting diodes in which the illuminating die and the film are separated by the ejector pin. It is easy to cause problems and defects in the process of rupture or damage. Through the collection of relevant materials through multi-party evaluation and consideration, and the continuous trial and modification of the industry's many years of experience, the design of such flip-chip LED modules is designed. method. An embodiment of the invention is a method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the glue a side of the film, and the luminescent film is adhered to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film; e) pushing the other side of the film to separate the light-emitting die and the film; and (f) packaging the light-emitting die to complete the light-emitting diode module. The method further includes: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a), thereby forming an epitaxial layer thereon. On the wafer substrate; (h) cutting the wafer substrate having the epitaxial layer into a plurality of single luminescent crystal grains; and (i) selecting one of the plurality of single luminescent dies cut by the step (h) The qualified luminescent crystal grains are obtained. In addition, the step (f) comprises: using a vacuum nozzle or a suction cup of a conveying device to adsorb the separated illuminating crystal grains, and then conveying the separated illuminating crystal grains with a conductive colloid or a solder. The circuit substrate is connected, and the predetermined circuit substrate can be a single-sided or double-sided circuit layout, wherein the light-emitting die is electrically connected to one or both sides of the predetermined circuit substrate in series or in parallel, and is coated. The phosphor phosphor is colloided to the separated luminescent crystal grains, and a baking process is performed to treat the luminescent crystal grains. Another embodiment of the present invention is a method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the a side of the film, and the luminescent film is adhered to the film by the curable adhesive; and (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film . According to still another embodiment of the present invention, a light emitting diode module preform includes: a film, a light emitting die, and a side of a curable adhesive attached to the film, and is bonded by the curable adhesive The luminescent crystal grains are on the film.

DRAWINGS

[Simple description of the map] 1 is a schematic view showing a change of a manufacturing state of an LED module according to an embodiment of the present invention; FIG. 2 is a schematic structural view of a thimble according to an embodiment of the present invention;

3 is a schematic diagram of a method for manufacturing an LED module according to an embodiment of the present invention; FIG. 4 is a schematic diagram of a method for further manufacturing an LED module according to an embodiment of the present invention; and FIG. 5 is a schematic diagram of a pre-material for an LED module according to an embodiment of the present invention.

[Main component symbol description]

 1 luminescent crystal

11 substrate

 12 N-type semiconductor layer

121 N-type electrode pad

13 luminescent layer

14 P type semiconductor layer

141 P type electrode pad

15 crystal layer

 Film

 UV glue

 Separation device

 1 thimble

 Conveyor

 1 nozzle

 01 Preparation film step

03 Preparing the luminescent grain step 305 Coating Curable Adhesive Steps

307 curing curable adhesive step

309 push film step

311 package luminescent grain step

313 Step of forming an epitaxial layer

315 cutting wafer steps

317 Steps for selecting qualified luminescent grains

319 combined with luminaire steps

401 Step of transporting luminescent crystals

403 Steps of connecting the light emitting die and the preset circuit substrate

405 Coating Phosphor Colloid Step

407 baking luminescent grain step

501 film

503 illuminating crystal

505 curable adhesive

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to achieve the above objects and effects, the present invention will be described with reference to the accompanying drawings, and the features and functions thereof are described in detail in the preferred embodiments of the present invention. Please refer to FIG. 1 , which are respectively a manufacturing state diagram of the LED module of the present invention. As can be clearly seen from FIG. 1 , the state change of the flip-chip LED module of the present invention is: in the first state, it is through epitaxial Schematic diagram of a plurality of single LED chips 1 after forming, cutting, crystallizing, and filming. In the epitaxial process, the N-type semiconductor layer 12, the light-emitting layer 13 and the P-type semiconductor layer 14 are sequentially grown on the wafer substrate 11 of the light-emitting diode, and the surface of the P-type semiconductor layer 14 is grown with light-transmitting conductive After the layer (not shown), the portion of the transparent conductive layer An N-type electrode pad 121 and a P-type electrode pad 141 are grown on the surface. The dicing process is to diced the wafer substrate having the epitaxial layer into the plurality of single luminescent crystal grains 1. The crystallization process is to sort and pick up the applicable luminescent crystals 1. In the filming process, a UV (ultraviolet) glue 3 is applied on the side surface of the film 2 to form a coating layer, and the plurality of light-emitting crystal grains 1 are adhered to the film 2 through the UV glue 3 to be integrated. . In the second state, it is a schematic diagram of UV (ultraviolet) exposure of the plurality of individual light emitting diode dies 1 . The coating layer is irradiated onto the film 2 by a UV exposure machine, and is quickly dried by the UV glue 3, and the viscosity of the luminescent film 1 adhered to the film 2 can be reduced. In the third state, it is a schematic diagram of the plurality of single LED die 1 . The ejector pin 41 of the separating device 4 is pushed up on the other side surface of the film 2, so that the respective luminescent crystal grains 1 are separated from the film 2 one by one. Referring to FIG. 2, it is a state of the ejector pin 41 of the separating device 4, and the ejector pin 41 can be of different types (such as a round head, a pointed head, etc.) depending on the size or weight of the illuminating die 1. Further, after the light-emitting crystal grains 1 are separated, they can be adsorbed to the light-emitting crystal grains 1 by the suction nozzles 51 of the transport device 5 for transport. After the die is transported to the appropriate processing line, other processes such as die attach, lamp package, etc. can be performed. In the former, the N-type electrode pad 121 and the P-type electrode pad 141 on the illuminating crystal 1 are respectively connected to the solder pad of the circuit substrate through the conductive paste or the solder, and the flip-chip LED module is formed. . The latter combines the LED module with an external luminaire package. It can be seen from the above steps that the epitaxial layer 15 is grown on the substrate 11, that is, the N-type semiconductor layer 12, the light-emitting layer 13, and the P-type semiconductor layer 14 are sequentially grown on the substrate 11. A light-transmissive conductive layer is grown on the surface of the P-type semiconductor layer 14 , and an N-type electrode pad 121 and a P-type electrode pad 141 are respectively grown on the surface of the light-transmitting conductive layer, but the portion of the epitaxial layer 15 is grown. (N-type semiconductor layer 12, light-emitting layer 13, and P-type semiconductor layer 14, etc.) are grown by exposure, development, and metal lift-off (Liff-Off) techniques, such as N-type electrode pad 121, P-type electrode pad 141, etc. The focus of the present invention is only briefly described in the present specification for understanding; then, the wafer substrate having the epitaxial layer can be cut into a plurality of individual light-emitting dies 1 and selected by Pick up) Applicable illuminating crystal 1; Another UV adhesive 3 is applied to the adhesive film 2 - a coating layer is formed on the side surface, and the UV adhesive 3 is applied on the adhesive film 2 in a manner that the screen can be utilized. Print Brush, roller type, spray type processing, etc., and the UV glue 3 can be UV Cure Resin or UV light curing polymer, and each of the luminescent crystal grains 1 can be transmitted through UV. The glue 3 is adhered to the film 2 to be integrated and arranged in an equidistant arrangement or array. Thus, the wholesale optical crystal 1 can be stocked or transported to a downstream manufacturer for subsequent packaging processes, and when the light-emitting die is used. 1 Before the packaging process is performed, the luminescent film 1 needs to be detached from the film 2, and at this time, the UV glue 3 coating layer on the film 2 can be irradiated by UV (ultraviolet) light generated by the UV exposure machine. After exposure, the UV glue 3 is quickly dried and light-cured to reduce the viscosity of the luminescent film 1 adhered to the film 2, that is, the characteristics of the UV glue 3 material are changed to become hard and brittle, and the separation device 4 is reused. The thimble (Push-up Needle, PUN for short) 41 is pushed up on the other side surface of the film 2, so that the thimble 41 made of metal material can be easily applied without a large pushing force. Each of the light-emitting crystal grains 1 and the film 2 are separated one by one, and can also be effectively prevented If the position of the needle 41 is not good, the pushing force is too large, or other parameters are poorly set, the epitaxial layer 15 is subjected to excessive impact energy, which causes damage and damage of the structure of the luminescent crystal 1 and improves the product. Quality and yield, reducing the cost of manufacturing. Therefore, the vacuum nozzle 51 or the suction cup of the conveying device 5 can be used to adsorb to the illuminating crystal grain.

1 is carried out, and the N-type electrode pad 121 and the P-type electrode pad 141 on the epitaxial layer 15 of the light-emitting die 1 are transmitted through the conductive paste or solder to respectively form a solder pad with the circuit substrate (not shown) The circuit substrate is connected to each other, and the circuit substrate may be provided with a circuit layout on one or both sides, and each rectangular light-emitting die 1 is electrically connected to the circuit substrate in one or both sides through a circuit layout in series or in parallel. By forming a single-sided or double-sided light-emitting type, thereby completing the crystallizing and adhesion of the light-emitting crystal 1, and then performing the phosphor colloid coating and baking process of the light-emitting crystal 1, the flip-chip light-emitting diode can be formed. The module then integrates the LED module into a package with an external luminaire (not shown). In addition, the above description is only a preferred embodiment of the present invention, and thus is not limited to the scope of patent application of the present invention, the substrate 11 on the luminescent crystal 1 of the present invention may be transparent sapphire, silicon carbide (SiC), oxidized. (Zn/O), magnesium oxide (MgO), gallium oxide (Ga ₂ 0 ₃ ), aluminum nitride (AlGaN), lithium gallium oxide (GaLiO), lithium aluminum oxide (AlLiO) or spinel (Spinel) substrate The N-type semiconductor layer 12 and the P-type semiconductor layer 14 may also be titanium, gold, titanium, aluminum, or one of or a combination of chromium, gold or chromium, aluminum, and sequentially grown on the substrate 11. The N-type semiconductor layer 12, the light-emitting layer 13, and the P-type semiconductor layer 14 constitute an epitaxial layer 15, which only needs to provide the light-emitting crystal grains 1 to pass through. When the UV glue 3 is adhered to the film 2, the UV light generated by the UV exposure machine can be irradiated to the UV glue 3 for exposure, and the UV film 3 can be light-cured to reduce the adhesion of the luminescent film 1 to the film 2 The viscosity of the top, the thimble 41 (shown in FIG. 2) of the separation device 4 can be different according to the size or weight of the illuminating crystal 1 (such as a round head, a pointed end, etc.), and is pushed to the top. On the other side of the film 2, when the luminescent film 1 is prevented from being detached from the film 2, the thimble 41 easily breaks the thin N-type semiconductor layer 12, the luminescent layer 13, and the P-type semiconductor layer 14 of the epitaxial layer 15. At the same time, it can also effectively prevent the position of the thimble 41 from being poor, the pushing force is too large, or other parameters are poorly set, causing the epitaxial layer 15 to withstand excessive impact energy, resulting in structural damage of the illuminating crystal 1 and the like. This can improve product yield and reduce manufacturing cost, but the technical features of the present invention are not limited thereto, and any changes or modifications that can be easily conceived by those skilled in the art of the present invention should be covered. In the following patent application scope of this case, it is combined with Chen Ming. Please refer to FIG. 3 , which is a schematic diagram of a method for manufacturing an LED module. The method comprises: (a) preparing a film (step 301); (b) preparing a light-emitting die (step 303); (c) applying a curable adhesive to one side of the film, and passing the a curable adhesive is applied to the luminescent film on the film (step 305); (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film (step 307); e) pushing the other side of the film, thereby separating the light-emitting die and the film (step 309); and (f) packaging the light-emitting die (step 311) to complete the light-emitting diode module. In addition, the method for manufacturing the LED module further includes: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a), thereby forming a An epitaxial layer is on the wafer substrate (step 313); (h) cutting the wafer substrate having the epitaxial layer into a plurality of single light-emitting dies (step 315); and (i) from the step ( h) selecting the qualified luminescent crystal grains from the plurality of dicing light-emitting dies that are cut (step 317). In addition, the structure obtained in the foregoing steps may be integrated with the lamp through the external lamp packaging step (step 319). Please refer to FIG. 4 , which is a schematic diagram of a further manufacturing method of the LED module. In addition, the step (f) includes: using a vacuum nozzle or a suction cup provided in a conveying device to adsorb the separated illuminating crystal grains and then conveying them (step 401), and separating the illuminating crystal grains by a conductive colloid or a solder. Connected to a predetermined circuit substrate (step 403), and the predetermined circuit substrate can be a single-sided or double-sided circuit layout, wherein the light-emitting die is electrically connected to the preset circuit substrate in series or parallel manner. Applying a phosphor colloid to the separated luminescent crystal grains on one or both sides (step 405), and performing baking A baking process to heat treat the luminescent grains (step 407). Please refer to FIG. 5 , which is a schematic diagram of the LED module pre-material. The LED module pre-material comprises: a film 501, a light-emitting die 503, and a curable adhesive 505 connected to one side of the film, and the light-emitting die is adhered through the curable adhesive 503 is on the film 501.

EXAMPLES Example 1. A method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the film And affixing the luminescent film to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film; Pushing the other side of the film to separate the light-emitting die and the film; and (f) packaging the light-emitting die to complete the light-emitting diode module.

Embodiment 2. The method of Embodiment 1, the method further comprising: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a) Forming an epitaxial layer on the wafer substrate; (h) cutting the wafer substrate having the epitaxial layer into a plurality of single light-emitting dies; and (i) passing the step (h) Among the plurality of single luminescent crystal grains that are cut, the qualified luminescent crystal grains are selected. Embodiment 3. The method according to Embodiment 2, wherein the epitaxial layer of the step (g) further has a light-transmitting conductive layer on the surface of the P-type semiconductor layer, and the surface of the light-transmitting conductive layer is partially There is an N-type electrode pad and a P-type electrode pad respectively, and the wafer substrate can be transparent sapphire, silicon carbide, oxidized, magnesium oxide, gallium oxide, aluminum nitride, lithium gallium oxide, lithium aluminum oxide. Or spinel-based titanium, aluminum; chrome, gold or chromium, aluminum or one of them or a combination thereof. The method of any one of embodiments 1 - 3, wherein the curable adhesive in the step (c) is a UV glue, and the curing of the step (d) is exposed to UV light. The UV glue is applied to cure the UV glue. Embodiment 5. The method according to Embodiment 4, wherein the UV glue is a UV Cure Resin or an ultraviolet light curing polymer. And the UV light is generated by an exposure machine. The method of any one of embodiments 1 to 5, wherein the coating of the step (c) is performed by screen printing, drum type, spray coating or the like.

 The method of any one of embodiments 1 - 6, wherein the step (e) is performed by pushing a top with a ejector, and the thimble can be of different types. Round

The method of any one of embodiments 1-7, wherein the step (f) comprises: using a vacuum nozzle or a suction cup provided in a conveying device to adsorb the separated luminescent crystal grains and then transporting The separate light emitting die is connected to a predetermined circuit substrate by a conductive paste or a solder, and the predetermined circuit substrate can be a single-sided or double-sided circuit layout for the light emitting die to be connected in series or in parallel The method is electrically connected to one or both sides of the preset circuit substrate, coating a phosphor colloid on the separated light emitting die, and performing a baking process to process the light emitting die. The method of any one of embodiments 1-8, wherein the package of step (f) is a flip chip package, and the light emitting diode module can be integrated with the external lamp package.

 The method of any one of the embodiments 1-9, the method for manufacturing the LED module, the method comprising: (a) preparing a film; (b) preparing a light-emitting die; (c) applying a curable adhesive to one side of the film, and bonding the luminescent film to the film by the curable adhesive; and (d) curing the curable adhesive and lowering the The viscosity of the luminescent film adhered to the film. Embodiment 11. According to the method of any of Embodiments 1 - 10, it is further possible for a light emitting diode module preform to include: a film, a light emitting die, and a curable adhesive connection. On the side of the film, the luminescent film is attached to the film by the curable adhesive. Although the present invention has been described in the above preferred embodiments, it is not intended to limit the invention, and various modifications and refinements may be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. In addition, the method for manufacturing the above-described flip-chip type light-emitting diode module of the present invention can achieve its efficacy and purpose when used. Therefore, the present invention is an invention with excellent practicability, and is an application for conforming to the invention patent. To file an application, I hope that the trial committee will grant the case as soon as possible to protect the inventor's hard work. If there is any doubt in the trial committee, please do not hesitate to give instructions, the inventor will try his best to cooperate and feel polite.

Claims

Claim A method of manufacturing an LED module, comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to one side of the film, and bonding the luminescent film to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent crystal film adhered to the film; (e) pushing the other side of the film to separate the luminescent film and the film; (f) encapsulating the luminescent die to complete the LED module. 2. The method of manufacturing a light emitting diode module according to claim 1, further comprising: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on a wafer substrate before the step (a), thereby forming an epitaxial layer on the wafer substrate; (h) cutting the wafer substrate having the epitaxial layer into a plurality of individual light-emitting dies; (i) selecting the acceptable luminescent crystal grains from the plurality of single luminescent crystal grains cut by the step (h). The method of manufacturing the LED module of claim 2, wherein the epitaxial layer of the step (g) further has a light-transmissive conductive layer on the surface of the P-type semiconductor layer, and the surface of the transparent conductive layer is partially There is an N-type electrode pad and a P-type electrode pad respectively, and the wafer substrate can be transparent sapphire, silicon carbide, oxidized, magnesium oxide, gallium oxide, aluminum nitride, lithium gallium oxide, lithium aluminum oxide. Or a spinel substrate; and the N-type semiconductor layer and the P-type semiconductor layer grown on the wafer substrate are respectively titanium, gold; titanium, aluminum; one of chromium, gold or chromium, aluminum or a combination thereof. 4. The method of manufacturing a light emitting diode module according to claim 1, wherein the curable adhesive in the step (c) is a UV adhesive, and the curing of the step (d) is exposing the UV adhesive to UV light. To cure the UV glue. The method of manufacturing the light emitting diode module according to claim 4, wherein the UV glue is a UV Cure Resin or an ultraviolet light curing polymer; and the UV light is generated by an exposure machine. The method of manufacturing the light emitting diode module according to claim 1, wherein the coating method of the step (c) can be processed by screen printing, drum type, spray type or the like. 7. The method of manufacturing an LED module according to claim 1, wherein the step (e) is performed by using a separating device having a ejector pin, and the ejector pin can be a different type of round head or 8. The method of manufacturing a light emitting diode module according to claim 1, wherein the step (f) comprises: adsorbing the separated light emitting crystal grains by using a vacuum nozzle or a suction cup provided in a conveying device; The colloid or a solder connects the separated illuminating die to a predetermined circuit substrate, and the predetermined circuit substrate can be a single-sided or double-sided circuit layout for electrically connecting the illuminating dies in series or in parallel. On one or both sides of the predetermined circuit substrate; coating a phosphor colloid on the separated luminescent crystal grains; and performing a baking process to heat the luminescent crystal grains. 9. The method of fabricating an LED module according to claim 1, wherein the package of step (f) is a flip chip package, and the LED module can be integrated with an external lamp package. 10. A method of fabricating an LED module, comprising: (a) preparing a film; (b) preparing a luminescent crystal grain; (c) applying a curable adhesive to one side of the film, and bonding the luminescent film to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent crystal film adhered to the adhesive film. 11. A light-emitting diode module pre-material, comprising:  a film; a luminescent crystal;  A curable adhesive is attached to one side of the film, and the luminescent film is attached to the film by the curable adhesive.