+

WO2011040749A3 - Dry film photoresist - Google Patents

Dry film photoresist Download PDF

Info

Publication number
WO2011040749A3
WO2011040749A3 PCT/KR2010/006612 KR2010006612W WO2011040749A3 WO 2011040749 A3 WO2011040749 A3 WO 2011040749A3 KR 2010006612 W KR2010006612 W KR 2010006612W WO 2011040749 A3 WO2011040749 A3 WO 2011040749A3
Authority
WO
WIPO (PCT)
Prior art keywords
dry film
protection layer
film photoresist
resin protection
haze
Prior art date
Application number
PCT/KR2010/006612
Other languages
French (fr)
Korean (ko)
Other versions
WO2011040749A2 (en
Inventor
문희완
봉동훈
석상훈
Original Assignee
코오롱인더스트리 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090093493A external-priority patent/KR101258733B1/en
Priority claimed from KR1020090131963A external-priority patent/KR101262448B1/en
Application filed by 코오롱인더스트리 주식회사 filed Critical 코오롱인더스트리 주식회사
Priority to CN201080043646.8A priority Critical patent/CN102549499B/en
Priority to JP2012530789A priority patent/JP5356603B2/en
Publication of WO2011040749A2 publication Critical patent/WO2011040749A2/en
Publication of WO2011040749A3 publication Critical patent/WO2011040749A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The present invention relates to a dry film photoresist, and more particularly to a dry film photoresist which can improve resolution by performing an exposure process in a removed state of a supporting film to prevent bad influence of an exposure effect due to the supporting film. In addition, the high resolution can be obtained by preventing the lowering of the transparency or the reduction of the developing speed while the exposure process is performed in presence of a resin protection layer. Particularly, the resin protection layer according to the present invention can reduce the manufacturing cost and the haze by reducing the wetting agent content such as polysilicon, can prevent the lowering of the haze by suppressing the damage of the resin protection layer, and can obtain the high resolution by preventing the reduction of the developing duration.
PCT/KR2010/006612 2009-09-30 2010-09-29 Dry film photoresist WO2011040749A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080043646.8A CN102549499B (en) 2009-09-30 2010-09-29 Dry film photoresist
JP2012530789A JP5356603B2 (en) 2009-09-30 2010-09-29 Dry film photoresist

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0093493 2009-09-30
KR1020090093493A KR101258733B1 (en) 2009-09-30 2009-09-30 Dry film photoresist
KR1020090131963A KR101262448B1 (en) 2009-12-28 2009-12-28 dry film photoresist
KR10-2009-0131963 2009-12-28

Publications (2)

Publication Number Publication Date
WO2011040749A2 WO2011040749A2 (en) 2011-04-07
WO2011040749A3 true WO2011040749A3 (en) 2011-08-04

Family

ID=43826780

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006612 WO2011040749A2 (en) 2009-09-30 2010-09-29 Dry film photoresist

Country Status (3)

Country Link
JP (1) JP5356603B2 (en)
CN (1) CN102549499B (en)
WO (1) WO2011040749A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102736419B1 (en) * 2016-11-17 2024-11-29 주식회사 동진쎄미켐 High resolution positive photosensitive resin composition
JP7025939B2 (en) * 2018-01-23 2022-02-25 サカタインクス株式会社 Pigment dispersion composition for color filter and resist composition for color filter
KR20210104072A (en) * 2018-12-18 2021-08-24 미쓰비시 세이시 가부시키가이샤 Positive Dry Film Resist and Etching Method
JP7221064B2 (en) * 2019-01-30 2023-02-13 太陽インキ製造株式会社 Dry films, cured products and electronic components
WO2024075158A1 (en) 2022-10-03 2024-04-11 株式会社レゾナック Photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board
WO2025074559A1 (en) * 2023-10-05 2025-04-10 株式会社レゾナック Photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030180635A1 (en) * 2002-02-12 2003-09-25 Harald Baumann Visible radiation sensitive composition
US20040023166A1 (en) * 2002-07-30 2004-02-05 Kevin Ray Method of manufacturing imaging compositions
KR20060095668A (en) * 2005-02-28 2006-09-01 주식회사 코오롱 Dry film photoresist
KR20070031435A (en) * 2004-08-11 2007-03-19 히다치 가세고교 가부시끼가이샤 Photosensitive resin composition and the photosensitive film using the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2992128B2 (en) * 1991-06-21 1999-12-20 日本合成化学工業株式会社 Photoresist film
JP3051252B2 (en) * 1992-02-28 2000-06-12 日本合成化学工業株式会社 Photoresist film laminating method
JP3241144B2 (en) * 1993-02-19 2001-12-25 日立化成工業株式会社 Photosensitive resin composition laminate, method for producing resist pattern, method for producing substrate, printed wiring board, printed wiring board and equipment
WO2003057484A1 (en) * 2001-12-28 2003-07-17 Teijin Dupont Films Japan Limited Laminated film
WO2006009076A1 (en) * 2004-07-20 2006-01-26 Hitachi Chemical Company, Ltd. Photosensitive element, method of forming resist pattern with the same, and process for producing printed wiring board
JP4699482B2 (en) * 2005-02-02 2011-06-08 コーロン インダストリーズ インク Method for producing positive-type dry film photoresist
WO2009054705A2 (en) * 2007-10-25 2009-04-30 Kolon Industries, Inc. Film type transfer material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030180635A1 (en) * 2002-02-12 2003-09-25 Harald Baumann Visible radiation sensitive composition
US20040023166A1 (en) * 2002-07-30 2004-02-05 Kevin Ray Method of manufacturing imaging compositions
KR20070031435A (en) * 2004-08-11 2007-03-19 히다치 가세고교 가부시끼가이샤 Photosensitive resin composition and the photosensitive film using the same
KR20060095668A (en) * 2005-02-28 2006-09-01 주식회사 코오롱 Dry film photoresist

Also Published As

Publication number Publication date
CN102549499A (en) 2012-07-04
WO2011040749A2 (en) 2011-04-07
CN102549499B (en) 2013-09-11
JP2013505484A (en) 2013-02-14
JP5356603B2 (en) 2013-12-04

Similar Documents

Publication Publication Date Title
WO2011040749A3 (en) Dry film photoresist
WO2011037438A3 (en) Dry film photoresist
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
SG159433A1 (en) Organic anti-reflective layer composition containing ring-opened phthalic anhydride and method for preparation thereof
WO2012125009A3 (en) Chemically amplified positive photosensitive composition for an organic insulation film, and method for forming an organic insulation film using same
WO2011050336A3 (en) Semiconductor devices having an enhanced absorption region and associated methods
WO2012008736A3 (en) Positive-type photosensitive resin composition and black bank of an organic light-emitting device including same
GB2484880A (en) Near-infrared absorbing film compositions
TW200741803A (en) Substrate processing apparatus, method for examining substrate processing conditions, and storage medium
WO2014102222A9 (en) Microelectronic method for etching a layer
WO2012037294A3 (en) Compositions and methods of treating edible matter and substrates therefor
NZ709512A (en) Process for producing a coated packaging material and packaging material having at least one barrier layer for hydrophobic compounds
WO2009075233A1 (en) Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
WO2008136155A1 (en) Liquid crystal display device manufacturing method, and liquid crystal display device
EP2336256A4 (en) Composition for forming silicon-containing resist underlayer film with onium group
WO2012169761A3 (en) Method for manufacturing a flame-resistant and transparent film, and flame-resistant and transparent film manufactured using same
WO2009105556A3 (en) Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography
TW200632559A (en) Positive dry film photoresist and composition for preparing the same
WO2010141115A3 (en) Directed material assembly
GB2486102A (en) Near-infrared absorbing film compositions
WO2010045359A3 (en) Aqueous polyurethaneurea compositions including dispersions and films
EP2863259A3 (en) Method for manufacturing photomask blank
TW200951508A (en) Color filter, method for producing the same and solid-state image pickup devices
TW201144936A (en) Radiation-sensitive resin composition, method for forming resist pattern, polymer and compound
WO2010065835A3 (en) Backplane structures for solution processed electronic devices

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080043646.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10820822

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012530789

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10820822

Country of ref document: EP

Kind code of ref document: A2

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载