WO2010113553A1 - Cu-co-si copper alloy for use in electronics, and manufacturing method therefor - Google Patents
Cu-co-si copper alloy for use in electronics, and manufacturing method therefor Download PDFInfo
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- WO2010113553A1 WO2010113553A1 PCT/JP2010/052375 JP2010052375W WO2010113553A1 WO 2010113553 A1 WO2010113553 A1 WO 2010113553A1 JP 2010052375 W JP2010052375 W JP 2010052375W WO 2010113553 A1 WO2010113553 A1 WO 2010113553A1
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- copper alloy
- mass
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010949 copper Substances 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 60
- 230000032683 aging Effects 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 31
- 238000005097 cold rolling Methods 0.000 claims description 18
- 238000005098 hot rolling Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 239000012776 electronic material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 36
- 239000000956 alloy Substances 0.000 abstract description 36
- 229910020711 Co—Si Inorganic materials 0.000 abstract description 20
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 229910017052 cobalt Inorganic materials 0.000 abstract description 6
- 239000010941 cobalt Substances 0.000 abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 37
- 239000000243 solution Substances 0.000 description 28
- 230000000694 effects Effects 0.000 description 27
- 238000005452 bending Methods 0.000 description 16
- 230000035882 stress Effects 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000002244 precipitate Substances 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 11
- 238000001556 precipitation Methods 0.000 description 11
- 239000006104 solid solution Substances 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 6
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 238000004881 precipitation hardening Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910018098 Ni-Si Inorganic materials 0.000 description 1
- 229910018529 Ni—Si Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018598 Si-Co Inorganic materials 0.000 description 1
- 229910008453 Si—Co Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
Definitions
- the present invention relates to a precipitation hardening type copper alloy, and more particularly to a Cu—Co—Si based copper alloy suitable for use in various electronic device parts.
- Copper alloys for electronic materials used in various electronic equipment parts such as connectors, switches, relays, pins, terminals, lead frames, etc.
- high integration and miniaturization / thinning of electronic components have been rapidly progressing, and the level of demand for copper alloys used in electronic device components has been increased accordingly.
- the amount of precipitation hardening type copper alloys is increasing instead of conventional solid solution strengthened copper alloys such as phosphor bronze and brass as copper alloys for electronic materials.
- precipitation-hardened copper alloys by aging the supersaturated solid solution that has undergone solution treatment, fine precipitates are uniformly dispersed, increasing the strength of the alloy and reducing the amount of solid solution elements in the copper. Electrical conductivity is improved. For this reason, a material excellent in mechanical properties such as strength and spring property and having good electrical conductivity and thermal conductivity can be obtained.
- Cu-Ni-Si copper alloys commonly called Corson alloys
- Corson alloys are representative copper alloys that have relatively high electrical conductivity, strength, and bending workability, and are currently active in the industry. It is one of the alloys being developed. In this copper alloy, the strength and conductivity can be improved by precipitating fine Ni—Si intermetallic compound particles in the copper matrix.
- Co forms a compound with Si in the same way as Ni, improves mechanical strength, and Cu—Co—Si based alloys are more mechanical than Cu—Ni—Si based alloys when subjected to aging treatment. It is described that a Cu—Co—Si based alloy may be selected if both strength and conductivity are improved and cost is allowed.
- the optimum addition amount in the case of adding Co is 0.8. It is said to be 05 to 2.0 wt%.
- Patent Document 2 describes that cobalt should be 0.5 to 2.5% by mass. This is because when the cobalt content is less than 0.5%, the precipitation of the cobalt-containing silicide second phase becomes insufficient, and when it exceeds 2.5%, excessive second-phase particles are precipitated, and the workability And the copper alloy is imparted with undesirable ferromagnetic properties.
- the cobalt content is from about 0.5% to about 1.5%, and in the most preferred form, the cobalt content is from about 0.7% to about 1.2%.
- the copper alloy described in Patent Document 3 has been developed mainly for use as terminals and connector materials for in-vehicle and communication devices, and has a high Co concentration of 0.5 to 2.5 wt%. It is a Cu-Co-Si alloy that achieves conductivity and medium strength. According to Patent Document 3, the reason why the Co concentration is defined in the above range is that when the addition amount is less than 0.5% by mass, a desired strength cannot be obtained, and when the Co content exceeds 2.5% by mass, the increase in strength is not achieved. This is because the electrical conductivity is remarkably lowered and the hot workability is deteriorated, and Co is preferably 0.5 to 2.0% by mass.
- the copper alloy described in Patent Document 4 was developed for the purpose of realizing high strength, high conductivity, and high bending workability, and the Co concentration is specified to be 0.1 to 3.0 wt%. Yes.
- the reason for limiting the Co concentration in this way is that the above effect is not exhibited below the composition range, and addition exceeding the composition range is not preferable because it causes a crystallization phase during casting and causes casting cracks. It is described that there is.
- JP 11-222641 A JP 2005-532477 A JP 2008-248333 A JP-A-9-20943
- the second phase particles such as crystallized substances and precipitates precipitated in the previous stage of the solution treatment process become obstacles and inhibit the growth of crystal grains. Therefore, there arises a problem that non-uniformity of recrystallized grains in the alloy is increased and variation in mechanical properties of the alloy is increased.
- the present invention provides a Cu—Co—Si alloy having high conductivity, high strength, and high bending workability, and having a uniform mechanical property and containing a high concentration of Co. Let's take one issue.
- Another object of the present invention is to provide a method for producing such a Cu—Co—Si based alloy.
- the present inventor has intensively studied a means for reducing the variation in recrystallized grains.
- fine second phase particles are formed before the solution treatment step.
- the crystal grains are not so large due to the pinning effect of the second phase particles even if the solution treatment is performed at a relatively high temperature.
- the knowledge that the size of the recrystallized grains growing can be made uniform because the pinning effect works uniformly in the entire copper matrix.
- it has been found that a Cu—Co—Si based alloy with little variation in mechanical properties can be obtained.
- the present invention completed on the basis of the above knowledge, in one aspect, contains Co: 0.5 to 4.0% by mass, Si: 0.1 to 1.2% by mass, with the balance being Cu and inevitable impurities.
- a copper alloy for electronic materials having an average crystal grain size of 15 to 30 ⁇ m and an average difference between the maximum crystal grain size and the minimum crystal grain size per observation field of 0.5 mm 2 is 10 ⁇ m or less It is a copper alloy.
- the copper alloy according to the present invention further contains up to 0.5% by mass of Cr.
- the copper alloy according to the present invention further contains one or more selected from Mg, Mn, Ag, and P in a total amount of up to 0.5% by mass.
- the copper alloy according to the present invention further contains one or two selected from Sn and Zn in a total of up to 2.0% by mass.
- the copper alloy according to the present invention further includes one or more selected from As, Sb, Be, B, Ti, Zr, Al and Fe in a total of up to 2.0% by mass. contains.
- Step 1 of melt casting an ingot having the desired composition Perform hot rolling after heating at ⁇ 950 ° C. to 1050 ° C. for 1 hour or longer, set the temperature at the end of hot rolling to 850 ° C. or higher, and cool at an average cooling rate from 850 ° C. to 400 ° C. to 15 ° C./s or higher.
- the present invention is a copper-drawn product provided with the above copper alloy.
- the present invention is an electronic device component including the copper alloy.
- a Cu—Co—Si alloy having mechanical and electrical characteristics suitable as a copper alloy for electronic materials and uniform mechanical characteristics can be obtained.
- Co and Si addition amount Co and Si form an intermetallic compound by performing an appropriate heat treatment, and can increase the strength without deteriorating the electrical conductivity. If the addition amounts of Co and Si are less than Co: 0.5 mass% and Si: less than 0.1 mass%, the desired strength cannot be obtained. Conversely, Co: more than 4.0 mass%, Si: 1. If it exceeds 2% by mass, the strength can be increased, but the electrical conductivity is remarkably lowered, and the hot workability is further deteriorated. Therefore, the addition amounts of Co and Si were set to Co: 0.5 to 4.0% by mass and Si: 0.1 to 1.2% by mass.
- the addition amount of Co and Si is preferably Co: 2.5 to 4.0% by mass, Si: 0.5 to 1.0% by mass, more preferably Co: 3.2 to 4.0% by mass. %, Si: 0.65 to 1.0 mass%.
- the amount of dissolved Si can be reduced, and the electrical conductivity can be increased without impairing the strength.
- Cr concentration exceeds 0.5% by mass, coarse second-phase particles are easily formed, so that product characteristics are impaired. Therefore, Cr can be added to the Cu—Co—Si alloy according to the present invention at a maximum of 0.5 mass%.
- the effect is small if it is less than 0.03% by mass, it is preferably added in an amount of 0.03 to 0.5% by mass, more preferably 0.09 to 0.3% by mass.
- Mg, Mn, Ag and P improve the product characteristics such as strength and stress relaxation characteristics without loss of electrical conductivity by adding a small amount.
- the effect of addition is exhibited mainly by solid solution in the matrix phase, but further effects can be exhibited by inclusion in the second phase particles.
- the total concentration of Mg, Mn, Ag, and P exceeds 0.5%, the effect of improving the characteristics is saturated and manufacturability is impaired. Therefore, one or more selected from Mg, Mn, Ag and P can be added to the Cu—Co—Si alloy according to the present invention in a total amount of up to 0.5 mass%.
- the effect is small if it is less than 0.01% by mass, it is preferable to add 0.01 to 0.5% by mass in total, more preferably 0.04 to 0.2% by mass in total.
- the product properties such as conductivity, strength, stress relaxation properties, plating properties, etc. can be adjusted by adjusting the amount added according to the required product properties.
- the effect of addition is exhibited mainly by solid solution in the parent phase, but it can also be exhibited by forming the second phase particles having a new composition or contained in the second phase particles. However, if the total amount of these elements exceeds 2.0% by mass, the effect of improving characteristics is saturated and manufacturability is impaired.
- one or more selected from As, Sb, Be, B, Ti, Zr, Al, and Fe are added up to 2.0 mass% in total. Can be added. However, since the effect is small if it is less than 0.001% by mass, it is preferable to add 0.001 to 2.0% by mass in total, more preferably 0.05 to 1.0% by mass in total.
- the total amount of Mg, Mn, Ag, P, Sn, Zn, As, Sb, Be, B, Ti, Zr, Al, and Fe exceeds 3.0% in total, manufacturability is easily lost.
- the total of these is 2.0% by mass or less, more preferably 1.5% by mass or less.
- Crystal grain size The crystal grain influences the strength, and the Hall Petch rule is generally established that the strength is proportional to the -1/2 power of the crystal grain size.
- coarse crystal grains deteriorate bending workability and cause rough skin during bending. Therefore, in general, in a copper alloy, it is desirable to refine crystal grains in order to improve strength. Specifically, it is preferably 30 ⁇ m or less, and more preferably 23 ⁇ m or less.
- the Cu—Co—Si alloy as in the present invention is a precipitation strengthening type alloy, it is necessary to pay attention to the precipitation state of the second phase particles.
- the second phase particles precipitated in the crystal grains in the aging treatment contribute to the strength improvement, but the second phase particles precipitated in the crystal grain boundaries hardly contribute to the strength improvement. Accordingly, in order to improve the strength, it is desirable to precipitate the second phase particles in the crystal grains. As the crystal grain size becomes smaller, the grain boundary area becomes larger, so that the second phase particles tend to preferentially precipitate at the grain boundaries during the aging treatment.
- the crystal grains need to have a certain size. Specifically, it is preferably 15 ⁇ m or more, and more preferably 18 ⁇ m or more.
- the average crystal grain size is controlled in the range of 15 to 30 ⁇ m.
- the average crystal grain size is preferably 18 to 23 ⁇ m.
- the crystal grain size refers to the diameter of the smallest circle surrounding each crystal grain when a cross section in the thickness direction parallel to the rolling direction is observed with a microscope. Average value.
- the average of the difference between the maximum crystal grain size and the minimum crystal grain size per observation field 0.5 mm 2 is 10 ⁇ m or less, preferably 7 ⁇ m or less.
- the average of the differences is ideally 0 ⁇ m, but is practically difficult, so the lower limit is set to 3 ⁇ m from the actual minimum value, and typically 3 to 7 ⁇ m is optimal.
- the maximum crystal grain size is the maximum crystal grain size observed in one observation field 0.5 mm 2
- the minimum crystal grain size is the minimum crystal grain size observed in the same field of view. It is.
- the difference between the maximum crystal grain size and the minimum crystal grain size is obtained in a plurality of observation fields, and the average value is set as the average of the difference between the maximum crystal grain size and the minimum crystal grain size.
- the small difference between the maximum crystal grain size and the minimum crystal grain size means that the crystal grain size is uniform, which reduces the variation in the mechanical properties of each measurement location within the same material. As a result, the quality stability of the copper products and electronic device parts obtained by processing the copper alloy according to the present invention is improved.
- the second phase particles that are heated in the temperature range of about 350 to about 550 ° C. for 1 hour or more and solid-dissolved by the solution treatment are precipitated as fine particles of nanometer order.
- This aging treatment increases strength and conductivity.
- cold rolling may be performed before aging and / or after aging.
- strain relief annealing low temperature annealing
- grinding, polishing, shot blast pickling and the like for removing oxide scale on the surface are appropriately performed.
- the copper alloy according to the present invention basically undergoes the above manufacturing process, but in order to control the average crystal grain size and the variation in crystal grain size within the range defined by the present invention, as described above, the solution It is important to deposit fine second-phase particles uniformly in the copper matrix phase at equal intervals before the chemical treatment step. In order to obtain the copper alloy according to the present invention, it is necessary to manufacture while paying particular attention to the following points.
- Hot rolling is performed after holding at 950 ° C. to 1050 ° C. for 1 hour or more, and if the temperature at the end of hot rolling is 850 ° C. or more, even if Co and further Cr are added, they are dissolved in the matrix. can do.
- the temperature condition of 950 ° C. or higher is a higher temperature setting than other Corson alloys. If the holding temperature before hot rolling is less than 950 ° C., solid solution is insufficient, and if it exceeds 1050 ° C., the material may be dissolved.
- the cooling rate is slow, the Si-based compound containing Co or Cr is precipitated again.
- a heat treatment aging treatment
- the cooling rate should be as high as possible, specifically 15 ° C./s or more.
- the cooling rate below 400 ° C. is not a problem. Therefore, in the present invention, cooling is performed at an average cooling rate of the material temperature from 850 ° C. to 400 ° C.
- “Average cooling rate when decreasing from 850 ° C. to 400 ° C.” means measuring the cooling time when the material temperature decreases from 850 ° C. to 650 ° C., and “(850-400) (° C.) / Cooling time (s)” The value (° C./s) calculated by.
- Water cooling is the most effective way to speed up cooling. However, since the cooling rate varies depending on the temperature of the water used for water cooling, the cooling can be further accelerated by managing the water temperature. Since the desired cooling rate may not be obtained when the water temperature is 25 ° C. or higher, it is preferably maintained at 25 ° C. or lower. When a material is placed in a tank in which water is stored and cooled with water, the temperature of the water rises and tends to be 25 ° C. or higher. It is preferable to prevent the water temperature from rising by spraying it in the form of a mist or mist) or by allowing cold water to always flow through the water tank. The cooling rate can also be increased by adding water cooling nozzles or increasing the amount of water per unit time.
- ⁇ Cold rolling is performed after hot rolling. This cold rolling is carried out for the purpose of increasing the strain that becomes a precipitation site in order to deposit precipitates uniformly, and cold rolling is preferably carried out at a rolling reduction of 70% or more, and at a rolling reduction of 85% or more. More preferably. If the solution treatment is performed immediately after the hot rolling without cold rolling, the precipitates are not uniformly deposited. The combination of hot rolling and subsequent cold rolling may be repeated as appropriate.
- the first temporary effect treatment is performed after cold rolling. If the second phase particles remain before this step is carried out, such second phase particles will grow further when this step is carried out. In the present invention, since the second phase particles are almost disappeared in the preceding step, it is possible to precipitate fine second phase particles uniformly in a uniform size. is there. However, if the aging temperature of the first temporary effect treatment is too low, the amount of precipitation of the second phase particles that bring about the pinning effect is reduced, and only a partial pinning effect caused by the solution treatment can be obtained. The size varies. On the other hand, if the aging temperature is too high, the second phase particles become coarse, and the second phase particles precipitate non-uniformly, so that the size of the second phase particles varies.
- the first temporary treatment is 350 to 500 ° C. for 1 to 24 hours, preferably 12 to 24 hours at 350 to 400 ° C., 6 to 12 hours at 400 to 450 ° C., 3 to 3 at 450 to 500 ° C.
- fine second phase particles can be uniformly deposited in the mother phase.
- an appropriate solution treatment time is 60 to 300 seconds, preferably 120 to 180 seconds at 950 ° C. or more and less than 1000 ° C., preferably 30 to 180 seconds, preferably 60 to 120 seconds at 1000 ° C. or more and less than 1050 ° C. is there
- the average cooling rate when the material temperature is decreased from 850 ° C. to 400 ° C. is 15 ° C./s or more, preferably 20 ° C. / Should be greater than or equal to s.
- the conditions for the second aging treatment may be those conventionally used as useful for refining the precipitates, but note that the temperature and time are set so that the precipitates do not become coarse.
- An example of the aging treatment condition is 1 to 24 hours in a temperature range of 350 to 550 ° C., more preferably 1 to 24 hours in a temperature range of 400 to 500 ° C.
- the cooling rate after the aging treatment hardly affects the size of the precipitate.
- precipitation sites are increased, and age hardening is promoted by using the precipitation sites to increase the strength.
- the precipitate is used to promote work hardening and increase the strength.
- Cold rolling can also be performed before and / or after the second aging treatment.
- the Cu—Co—Si based alloy of the present invention can be processed into various copper products, such as plates, strips, tubes, rods and wires, and the Cu—Co—Si based copper alloy according to the present invention is a lead. It can be used for electronic parts such as frames, connectors, pins, terminals, relays, switches, and foil materials for secondary batteries.
- a copper alloy having the composition described in Table 1 (Example) and Table 2 (Comparative Example) was melted at 1300 ° C. in a high-frequency melting furnace and cast into an ingot having a thickness of 30 mm. Next, the ingot was heated to 1000 ° C. and then hot-rolled to a plate thickness of 10 mm to obtain an ascending temperature (hot rolling end temperature) of 900 ° C. After the hot rolling was completed, the material was cooled with water at an average cooling rate of 18 ° C. when the material temperature decreased from 850 ° C. to 400 ° C., and then allowed to cool in the air.
- the surface was chamfered to a thickness of 9 mm for removing the scale, and then a plate having a thickness of 0.15 mm was formed by cold rolling.
- the first temporary effect treatment was then carried out at various aging temperatures for 3 to 12 hours (some comparative examples were not subjected to this aging treatment), followed by solution treatment at various solution temperatures for 120 seconds, and thereafter Immediately, the material was cooled with water at an average cooling rate of 18 ° C. when the material temperature decreased from 850 ° C. to 400 ° C., and then left in the air for cooling. Next, it was cold-rolled to 0.10 mm, subjected to a second aging treatment in an inert atmosphere at 450 ° C. for 3 hours, and finally cold-rolled to 0.08 mm to produce a test piece.
- the crystal grain size was determined by filling the sample with a resin so that the observation surface had a cross section in the thickness direction parallel to the rolling direction, and mirror-finishing the observation surface by mechanical polishing, and then 100 parts by volume of water. In a mixed solution of 10 parts by volume of hydrochloric acid having a concentration of 36%, ferric chloride having a weight of 5% of the weight of the solution was dissolved. The sample was immersed in the solution thus prepared for 10 seconds to reveal the metal structure. Next, the metallographic structure is magnified 100 times with an optical microscope, an observation field of view of 0.5 mm 2 is taken in a single photograph, and the diameters of the smallest circles surrounding each crystal grain are all determined. The average value was calculated, and the average value at 15 observation fields was taken as the average crystal grain size.
- Conductivity Conductivity (EC;% IACS) was determined by volume resistivity measurement using a double bridge. The variation in conductivity depending on the measurement location is the difference between the maximum strength and the minimum strength at 30 locations, and the average conductivity is the average value of these 30 locations.
- Bending workability was evaluated by rough skin of the bent part.
- a Badway (bending axis is the same direction as the rolling direction) W-bending test was performed, and the surface of the bending portion was analyzed with a confocal laser microscope to obtain Ra ( ⁇ m) defined in JIS B 0601.
- the variation in the bending roughness depending on the measurement location is the difference between the maximum Ra and the minimum Ra at 30 locations, and the average bending roughness is the average value of Ra at 30 locations.
- No. Alloys 1 to 6 are examples of the present invention relating to alloys with relatively low Co concentrations (0.7 and 2.0 mass%), and the average strength is reduced by the low Co concentration, There is little variation in various characteristics.
- No. Alloys 7 to 36 are examples of the present invention relating to alloys having a high Co concentration (3.0% by mass or more), all having strength and conductivity suitable for electronic materials, and variations in characteristics. Few. No. The alloys Nos. 37 to 44 were not subjected to the first temporary effect treatment, and the strength and bending workability deteriorated due to the coarsening of the crystal grain size during the solution treatment.
- No. Alloys 45 to 48 are not subjected to the first temporary effect treatment and have a low solution temperature.
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Abstract
Description
The copper alloy described in Patent Document 3 has been developed mainly for use as terminals and connector materials for in-vehicle and communication devices, and has a high Co concentration of 0.5 to 2.5 wt%. It is a Cu-Co-Si alloy that achieves conductivity and medium strength. According to Patent Document 3, the reason why the Co concentration is defined in the above range is that when the addition amount is less than 0.5% by mass, a desired strength cannot be obtained, and when the Co content exceeds 2.5% by mass, the increase in strength is not achieved. This is because the electrical conductivity is remarkably lowered and the hot workability is deteriorated, and Co is preferably 0.5 to 2.0% by mass.
一方、Co濃度を更に高めると、溶体化処理をより高温で実施する必要があり、そのような場合は再結晶粒が粗大化しやすい。また、溶体化処理工程の前段で析出していた晶出物や析出物といった第二相粒子が障害物となって結晶粒の成長を阻害する。そのため、合金中の再結晶粒の不均一性が大きくなり、合金の機械的特性のばらつきが大きくなるという問題が生じる。 As described above, it is known that Co addition contributes to the improvement of the properties of the copper alloy. However, as described in the above-mentioned prior art documents, if the Co content is increased, the manufacturability and the alloy properties are adversely affected. In a Cu—Co—Si based alloy, improvement in characteristics when Co is added at a high concentration has not been sufficiently studied. However, Co is said to improve mechanical strength and conductivity compared to Ni, and there remains a possibility that characteristics can be improved by further increasing the Co concentration in Cu-Co-Si alloys. Conceivable.
On the other hand, when the Co concentration is further increased, it is necessary to perform the solution treatment at a higher temperature. In such a case, the recrystallized grains are likely to be coarsened. Further, the second phase particles such as crystallized substances and precipitates precipitated in the previous stage of the solution treatment process become obstacles and inhibit the growth of crystal grains. Therefore, there arises a problem that non-uniformity of recrystallized grains in the alloy is increased and variation in mechanical properties of the alloy is increased.
-所望の組成をもつインゴットを溶解鋳造する工程1と、
-950℃~1050℃で1時間以上加熱後に熱間圧延を行い、熱間圧延終了時の温度を850℃以上とし、850℃から400℃までの平均冷却速度を15℃/s以上として冷却する工程2と、
-加工度85%以上の冷間圧延工程3と、
-350~500℃で1~24時間加熱する時効処理工程4と、
-950~1050℃で溶体化処理を行い、材料温度が850℃から400℃まで低下するときの平均冷却速度を15℃/s以上として冷却する工程5と、
-随意的な冷間圧延工程6と、
-時効処理工程7と、
-随意的な冷間圧延工程8と、
を順に行うことを含む銅合金の製造方法である。 In another aspect of the present invention,
-
Perform hot rolling after heating at −950 ° C. to 1050 ° C. for 1 hour or longer, set the temperature at the end of hot rolling to 850 ° C. or higher, and cool at an average cooling rate from 850 ° C. to 400 ° C. to 15 ° C./s or higher. Step 2 and
-Cold rolling step 3 with a working degree of 85% or more;
An aging treatment step 4 of heating at −350 to 500 ° C. for 1 to 24 hours;
Performing a solution treatment at −950 to 1050 ° C., and cooling at an average cooling rate of 15 ° C./s or higher when the material temperature decreases from 850 ° C. to 400 ° C .; and
-Optional cold rolling process 6;
-Aging treatment step 7;
-Optional cold rolling process 8;
It is a manufacturing method of the copper alloy including performing sequentially.
Co及びSiは、適当な熱処理を施すことにより金属間化合物を形成し、導電率を劣化させずに高強度化が図れる。
Co及びSiの添加量がそれぞれCo:0.5質量%未満、Si:0.1質量%未満では所望の強度が得られず、逆に、Co:4.0質量%超、Si:1.2質量%超では高強度化は図れるが導電率が著しく低下し、更には熱間加工性が劣化する。よってCo及びSiの添加量はCo:0.5~4.0質量%、及び、Si:0.1~1.2質量%とした。
Cu-Co-Si系ではCu-Ni-Si系、Cu-Ni-Si-Co系より高強度が望まれるため、Coの高濃度が望まれ、2.5%以上、より好ましくは、3.2%以上が望ましい。すなわち、Co及びSiの添加量は好ましくは、Co:2.5~4.0質量%、Si:0.5~1.0質量%、より好ましくは、Co:3.2~4.0質量%、Si:0.65~1.0質量%である。 (Co and Si addition amount)
Co and Si form an intermetallic compound by performing an appropriate heat treatment, and can increase the strength without deteriorating the electrical conductivity.
If the addition amounts of Co and Si are less than Co: 0.5 mass% and Si: less than 0.1 mass%, the desired strength cannot be obtained. Conversely, Co: more than 4.0 mass%, Si: 1. If it exceeds 2% by mass, the strength can be increased, but the electrical conductivity is remarkably lowered, and the hot workability is further deteriorated. Therefore, the addition amounts of Co and Si were set to Co: 0.5 to 4.0% by mass and Si: 0.1 to 1.2% by mass.
In the Cu—Co—Si system, higher strength is desired than in the Cu—Ni—Si system and Cu—Ni—Si—Co system, so a high concentration of Co is desired, 2.5% or more, more preferably 3. 2% or more is desirable. That is, the addition amount of Co and Si is preferably Co: 2.5 to 4.0% by mass, Si: 0.5 to 1.0% by mass, more preferably Co: 3.2 to 4.0% by mass. %, Si: 0.65 to 1.0 mass%.
Crは溶解鋳造時の冷却過程において結晶粒界に優先析出するため粒界を強化でき、熱間加工時の割れが発生しにくくなり、歩留低下を抑制できる。すなわち、溶解鋳造時に粒界析出したCrは溶体化処理などで再固溶するが、続く時効析出時にCrを主成分としたbcc構造の析出粒子またはSiとの化合物を生成する。通常のCu-Ni-Si系合金では添加したSi量のうち、時効析出に寄与しなかったSiは母相に固溶したまま導電率の上昇を抑制するが、珪化物形成元素であるCrを添加して、珪化物をさらに析出させることにより、固溶Si量を低減でき、強度を損なわずに導電率を上昇できる。しかしながら、Cr濃度が0.5質量%を超えると粗大な第二相粒子を形成しやすくなるため、製品特性を損なう。従って、本発明に係るCu-Co-Si系合金には、Crを最大で0.5質量%添加することができる。但し、0.03質量%未満ではその効果が小さいので、好ましくは0.03~0.5質量%、より好ましくは0.09~0.3質量%添加するのがよい。 (Addition amount of Cr)
Since Cr preferentially precipitates at the crystal grain boundaries during the cooling process during melt casting, the grain boundaries can be strengthened, cracks during hot working are less likely to occur, and yield reduction can be suppressed. That is, Cr that has precipitated at the grain boundaries during melt casting is re-dissolved by solution treatment or the like, but during subsequent aging precipitation, precipitated particles having a bcc structure mainly composed of Cr or a compound with Si are generated. In a normal Cu—Ni—Si alloy, Si that did not contribute to aging precipitation suppresses the increase in conductivity while remaining in solid solution in the matrix phase, but the silicide-forming element Cr is reduced. By adding and further depositing silicide, the amount of dissolved Si can be reduced, and the electrical conductivity can be increased without impairing the strength. However, when the Cr concentration exceeds 0.5% by mass, coarse second-phase particles are easily formed, so that product characteristics are impaired. Therefore, Cr can be added to the Cu—Co—Si alloy according to the present invention at a maximum of 0.5 mass%. However, since the effect is small if it is less than 0.03% by mass, it is preferably added in an amount of 0.03 to 0.5% by mass, more preferably 0.09 to 0.3% by mass.
Mg、Mn、Ag及びPは、微量の添加で、導電率を損なわずに強度、応力緩和特性等の製品特性を改善する。添加の効果は主に母相への固溶により発揮されるが、第二相粒子に含有されることで一層の効果を発揮させることもできる。しかしながら、Mg、Mn、Ag及びPの濃度の総計が0.5%を超えると特性改善効果が飽和するうえ、製造性を損なう。従って、本発明に係るCu-Co-Si系合金には、Mg、Mn、Ag及びPから選択される1種又は2種以上を総計で最大0.5質量%添加することができる。但し、0.01質量%未満ではその効果が小さいので、好ましくは総計で0.01~0.5質量%、より好ましくは総計で0.04~0.2質量%添加するのがよい。 (Addition amount of Mg, Mn, Ag and P)
Mg, Mn, Ag, and P improve the product characteristics such as strength and stress relaxation characteristics without loss of electrical conductivity by adding a small amount. The effect of addition is exhibited mainly by solid solution in the matrix phase, but further effects can be exhibited by inclusion in the second phase particles. However, if the total concentration of Mg, Mn, Ag, and P exceeds 0.5%, the effect of improving the characteristics is saturated and manufacturability is impaired. Therefore, one or more selected from Mg, Mn, Ag and P can be added to the Cu—Co—Si alloy according to the present invention in a total amount of up to 0.5 mass%. However, since the effect is small if it is less than 0.01% by mass, it is preferable to add 0.01 to 0.5% by mass in total, more preferably 0.04 to 0.2% by mass in total.
Sn及びZnにおいても、微量の添加で、導電率を損なわずに強度、応力緩和特性、めっき性等の製品特性を改善する。添加の効果は主に母相への固溶により発揮される。しかしながら、Sn及びZnの総計が2.0質量%を超えると特性改善効果が飽和するうえ、製造性を損なう。従って、本発明に係るCu-Co-Si系合金には、Sn及びZnから選択される1種又は2種を総計で最大2.0質量%添加することができる。但し、0.05質量%未満ではその効果が小さいので、好ましくは総計で0.05~2.0質量%、より好ましくは総計で0.5~1.0質量%添加するのがよい。 (Addition amount of Sn and Zn)
Even in the case of Sn and Zn, addition of a small amount improves product characteristics such as strength, stress relaxation characteristics, and plating properties without impairing electrical conductivity. The effect of addition is exhibited mainly by solid solution in the matrix. However, if the total amount of Sn and Zn exceeds 2.0% by mass, the effect of improving characteristics is saturated and manufacturability is impaired. Therefore, a maximum of 2.0% by mass in total of one or two selected from Sn and Zn can be added to the Cu—Co—Si based alloy according to the present invention. However, if the amount is less than 0.05% by mass, the effect is small. Therefore, it is preferable to add 0.05 to 2.0% by mass in total, and more preferably 0.5 to 1.0% by mass in total.
As、Sb、Be、B、Ti、Zr、Al及びFeにおいても、要求される製品特性に応じて、添加量を調整することで、導電率、強度、応力緩和特性、めっき性等の製品特性を改善する。添加の効果は主に母相への固溶により発揮されるが、第二相粒子に含有され、若しくは新たな組成の第二相粒子を形成することで一層の効果を発揮させることもできる。しかしながら、これらの元素の総計が2.0質量%を超えると特性改善効果が飽和するうえ、製造性を損なう。従って、本発明に係るCu-Co-Si系合金には、As、Sb、Be、B、Ti、Zr、Al及びFeから選択される1種又は2種以上を総計で最大2.0質量%添加することができる。但し、0.001質量%未満ではその効果が小さいので、好ましくは総計で0.001~2.0質量%、より好ましくは総計で0.05~1.0質量%添加するのがよい。 (As, Sb, Be, B, Ti, Zr, Al and Fe)
For As, Sb, Be, B, Ti, Zr, Al, and Fe, the product properties such as conductivity, strength, stress relaxation properties, plating properties, etc. can be adjusted by adjusting the amount added according to the required product properties. To improve. The effect of addition is exhibited mainly by solid solution in the parent phase, but it can also be exhibited by forming the second phase particles having a new composition or contained in the second phase particles. However, if the total amount of these elements exceeds 2.0% by mass, the effect of improving characteristics is saturated and manufacturability is impaired. Therefore, in the Cu—Co—Si based alloy according to the present invention, one or more selected from As, Sb, Be, B, Ti, Zr, Al, and Fe are added up to 2.0 mass% in total. Can be added. However, since the effect is small if it is less than 0.001% by mass, it is preferable to add 0.001 to 2.0% by mass in total, more preferably 0.05 to 1.0% by mass in total.
結晶粒は強度に影響を与え、強度が結晶粒径の-1/2乗に比例するというホールペッチ則が一般に成立する。また、粗大な結晶粒は曲げ加工性を悪化させ、曲げ加工時の肌荒れの要因となる。従って、銅合金においては一般に、結晶粒は微細化することが強度向上のためには望ましい。具体的には30μm以下とするのが好ましく、23μm以下とするのが更により好ましい。 (Crystal grain size)
The crystal grain influences the strength, and the Hall Petch rule is generally established that the strength is proportional to the -1/2 power of the crystal grain size. In addition, coarse crystal grains deteriorate bending workability and cause rough skin during bending. Therefore, in general, in a copper alloy, it is desirable to refine crystal grains in order to improve strength. Specifically, it is preferably 30 μm or less, and more preferably 23 μm or less.
コルソン系銅合金の一般的な製造プロセスでは、まず大気溶解炉を用い、電気銅、Si、Co等の原料を溶解し、所望の組成の溶湯を得る。そして、この溶湯をインゴットに鋳造する。その後、熱間圧延を行い、冷間圧延と熱処理を繰り返して、所望の厚み及び特性を有する条や箔に仕上げる。熱処理には溶体化処理と時効処理がある。溶体化処理では、約700~約1000℃の高温で加熱して、第二相粒子をCu母地中に固溶させ、同時にCu母地を再結晶させる。溶体化処理を、熱間圧延で兼ねることもある。時効処理では、約350~約550℃の温度範囲で1時間以上加熱し、溶体化処理で固溶させた第二相粒子をナノメートルオーダーの微細粒子として析出させる。この時効処理で強度と導電率が上昇する。より高い強度を得るために、時効前及び/又は時効後に冷間圧延を行うことがある。また、時効後に冷間圧延を行う場合には、冷間圧延後に歪取焼鈍(低温焼鈍)を行うことがある。
上記各工程の合間には適宜、表面の酸化スケール除去のための研削、研磨、ショットブラスト酸洗等が適宜行なわれる。 (Production method)
In a general manufacturing process of a Corson-based copper alloy, first, an atmospheric melting furnace is used to melt raw materials such as electrolytic copper, Si, and Co to obtain a molten metal having a desired composition. Then, this molten metal is cast into an ingot. Thereafter, hot rolling is performed, and cold rolling and heat treatment are repeated to finish a strip or foil having a desired thickness and characteristics. Heat treatment includes solution treatment and aging treatment. In the solution treatment, heating is performed at a high temperature of about 700 to about 1000 ° C. to cause the second phase particles to be dissolved in the Cu matrix and simultaneously to recrystallize the Cu matrix. The solution treatment may be combined with hot rolling. In the aging treatment, the second phase particles that are heated in the temperature range of about 350 to about 550 ° C. for 1 hour or more and solid-dissolved by the solution treatment are precipitated as fine particles of nanometer order. This aging treatment increases strength and conductivity. In order to obtain higher strength, cold rolling may be performed before aging and / or after aging. In addition, when cold rolling is performed after aging, strain relief annealing (low temperature annealing) may be performed after cold rolling.
Between the above steps, grinding, polishing, shot blast pickling and the like for removing oxide scale on the surface are appropriately performed.
ただし、第一時効処理の時効温度が低すぎるとピン止め効果をもたらす第二相粒子の析出量が少なくなり、溶体化処理で生じるピン止め効果が部分的にしか得られないので、結晶粒の大きさがばらつく。一方、時効温度が高すぎると第二相粒子が粗大になり、また不均一に第二相粒子が析出するために、第二相粒子の粒径の大きさがばらついてしまう。また、時効時間が長いほど第二相粒子が成長していくので、適度な時効時間に設定する必要がある。
第一時効処理は350~500℃で1~24時間、好ましくは350℃以上400℃未満では12~24時間、400℃以上450℃未満では6~12時間、450℃以上500℃未満では3~6時間行うことにより、母相中に微細な第二相粒子を均等に析出させることができる。このような組織だと、次工程の溶体化処理で生じる再結晶粒の成長を一様にピン止めすることができ、結晶粒径にばらつきの少ない整粒組織を得ることができる。 The first temporary effect treatment is performed after cold rolling. If the second phase particles remain before this step is carried out, such second phase particles will grow further when this step is carried out. In the present invention, since the second phase particles are almost disappeared in the preceding step, it is possible to precipitate fine second phase particles uniformly in a uniform size. is there.
However, if the aging temperature of the first temporary effect treatment is too low, the amount of precipitation of the second phase particles that bring about the pinning effect is reduced, and only a partial pinning effect caused by the solution treatment can be obtained. The size varies. On the other hand, if the aging temperature is too high, the second phase particles become coarse, and the second phase particles precipitate non-uniformly, so that the size of the second phase particles varies. Further, since the second phase particles grow as the aging time is longer, it is necessary to set an appropriate aging time.
The first temporary treatment is 350 to 500 ° C. for 1 to 24 hours, preferably 12 to 24 hours at 350 to 400 ° C., 6 to 12 hours at 400 to 450 ° C., 3 to 3 at 450 to 500 ° C. By carrying out for 6 hours, fine second phase particles can be uniformly deposited in the mother phase. With such a structure, the growth of recrystallized grains generated in the solution treatment in the next step can be uniformly pinned, and a sized structure with little variation in crystal grain size can be obtained.
結晶粒径は、試料を観察面が圧延方向に対し平行な厚み方向の断面となるように樹脂埋めし、観察面を機械研磨にて鏡面仕上げ後、水100容量部に対して濃度36%の塩酸10容量部の割合で混合した溶液に、その溶液の重量の5%の重量の塩化第二鉄を溶解した。こうして出来上がった溶液中に試料を10秒間浸漬して金属組織を現出させた。次に、前記金属組織を光学顕微鏡で100倍に拡大して観察視野0.5mm2を一枚の写真に撮り、個々の結晶粒を取り囲む最小円の直径をすべて求め、各観察視野に対して平均値を算出し、観察視野15箇所の平均値を平均結晶粒径とした。 (1) Average crystal grain size The crystal grain size was determined by filling the sample with a resin so that the observation surface had a cross section in the thickness direction parallel to the rolling direction, and mirror-finishing the observation surface by mechanical polishing, and then 100 parts by volume of water. In a mixed solution of 10 parts by volume of hydrochloric acid having a concentration of 36%, ferric chloride having a weight of 5% of the weight of the solution was dissolved. The sample was immersed in the solution thus prepared for 10 seconds to reveal the metal structure. Next, the metallographic structure is magnified 100 times with an optical microscope, an observation field of view of 0.5 mm 2 is taken in a single photograph, and the diameters of the smallest circles surrounding each crystal grain are all determined. The average value was calculated, and the average value at 15 observation fields was taken as the average crystal grain size.
平均結晶粒径を求めたときに測定した結晶粒径について、最大値と最小値の差を視野毎に求め、観察視野15箇所の平均値を最大結晶粒径-最小結晶粒径の差の平均とした。 (2) Average of the difference between the maximum crystal grain size and the minimum crystal grain size For the crystal grain size measured when the average crystal grain size was determined, the difference between the maximum value and the minimum value was determined for each field of view, The average value was the average difference between the maximum crystal grain size and the minimum crystal grain size.
強度については圧延平行方向の引張り試験を行って0.2%耐力(YS:MPa)を測定した。測定箇所による強度のばらつきは30箇所の最大強度―最小強度の差とし、平均強度はこの30箇所の平均値である。 (3) Strength Regarding the strength, a 0.2% proof stress (YS: MPa) was measured by performing a tensile test in the rolling parallel direction. The variation in intensity between the measurement points is the difference between the maximum intensity and the minimum intensity at 30 points, and the average intensity is the average value of these 30 points.
導電率(EC;%IACS)についてはダブルブリッジによる体積抵抗率測定により求めた。測定箇所による導電率のばらつきは30箇所の最大強度-最小強度の差とし、平均導電率はこの30箇所の平均値である。 (4) Conductivity Conductivity (EC;% IACS) was determined by volume resistivity measurement using a double bridge. The variation in conductivity depending on the measurement location is the difference between the maximum strength and the minimum strength at 30 locations, and the average conductivity is the average value of these 30 locations.
応力緩和特性は、図1の様に幅10mm×長さ100mmに加工した厚みt=0.08mmの各試験片に標点距離lは25mmで高さy0は負荷応力が0.2%耐力の80%になるように高さを決定、曲げ応力を負荷し、150℃にて1000時間加熱後の図2に示す永久変形量(高さ)yを測定し応力緩和率{[1-(y-y1)(mm)/(y0-y1)(mm)]×100(%)}を算出した。なお、y1は応力を負荷する前の初期のソリの高さである。測定箇所による応力緩和率のばらつきは30箇所の最大強度―最小強度の差とし、平均応力緩和率はこの30箇所の平均値である。 (5) Stress relaxation characteristics As shown in FIG. 1, the stress relaxation characteristics are as follows. Each test piece with a thickness t = 0.08 mm processed to a width of 10 mm and a length of 100 mm is 25 mm in length and y 0 is the load stress. The height is determined to be 80% of 0.2% proof stress, bending stress is applied, and the amount of permanent deformation (height) y shown in FIG. The rate {[1- (y-y 1 ) (mm) / (y 0 -y 1 ) (mm)] × 100 (%)} was calculated. Y 1 is the initial warp height before stress is applied. The variation in the stress relaxation rate depending on the measurement location is the difference between the maximum strength and the minimum strength at 30 locations, and the average stress relaxation rate is the average value of these 30 locations.
曲げ加工性は、曲げ部の肌荒れにより評価した。JIS H 3130に従って、Badway(曲げ軸が圧延方向と同一方向)のW曲げ試験を行い、曲げ部の表面を共焦点レーザー顕微鏡で解析し、JIS B 0601規定のRa(μm)を求めた。測定箇所による曲げ粗さのばらつきは30箇所の最大Ra-最小Raの差とし、平均曲げ粗さはこの30箇所のRaの平均値である。 (6) Bending workability Bending workability was evaluated by rough skin of the bent part. In accordance with JIS H 3130, a Badway (bending axis is the same direction as the rolling direction) W-bending test was performed, and the surface of the bending portion was analyzed with a confocal laser microscope to obtain Ra (μm) defined in JIS B 0601. The variation in the bending roughness depending on the measurement location is the difference between the maximum Ra and the minimum Ra at 30 locations, and the average bending roughness is the average value of Ra at 30 locations.
No.7~36の合金は、Co濃度が高い(3.0質量%以上)合金に係る本発明の実施例であり、いずれも電子材料用に適した強度及び導電率を有し、特性のばらつきも少ない。
No.37~44の合金は、第一時効処理を行っておらず、溶体化処理時に結晶粒径が粗大化したことにより、強度及び曲げ加工性が劣化した。
No.45~48の合金は、第一時効処理を行っておらず、且つ、溶体化温度が低い。第二相粒子が十分に固溶せず、また、結晶粒が小さすぎたので、強度及び応力緩和特性が劣化した。
No.49~54の合金は、第一時効処理の時効温度が低すぎ、第二相粒子が少なかったことにより、溶体化処理時に結晶粒径が粗大化して強度及び曲げ加工性が劣化した。また、結晶粒径のばらつきが多くなった。その結果、特性のばらつきが大きくなった。
No.55~56の合金は、Coの添加量が多すぎたため、強度及び導電率が劣化した。
No.57~64の合金は、第一時効処理の時効温度が高すぎ、第二相粒子が不均一に成長したことにより、結晶粒径がばらついた。その結果、特性のばらつきが大きくなった。 No.
No. Alloys 7 to 36 are examples of the present invention relating to alloys having a high Co concentration (3.0% by mass or more), all having strength and conductivity suitable for electronic materials, and variations in characteristics. Few.
No. The alloys Nos. 37 to 44 were not subjected to the first temporary effect treatment, and the strength and bending workability deteriorated due to the coarsening of the crystal grain size during the solution treatment.
No. Alloys 45 to 48 are not subjected to the first temporary effect treatment and have a low solution temperature. Since the second phase particles were not sufficiently dissolved and the crystal grains were too small, the strength and stress relaxation characteristics were deteriorated.
No. In the alloys Nos. 49 to 54, the aging temperature of the first temporary treatment was too low and the number of second phase particles was small, so that the crystal grain size was coarsened during the solution treatment and the strength and bending workability were deteriorated. In addition, the variation in crystal grain size increased. As a result, the variation in characteristics became large.
No. In alloys 55 to 56, the amount of Co added was too large, so that the strength and conductivity deteriorated.
No. In the alloys 57 to 64, the aging temperature of the first temporary effect treatment was too high, and the second-phase particles grew non-uniformly, so that the crystal grain size varied. As a result, the variation in characteristics became large.
Claims (8)
- Co:0.5~4.0質量%、Si:0.1~1.2質量%を含有し、残部がCu及び不可避不純物からなる電子材料用銅合金であって、平均結晶粒径が15~30μmであり、観察視野0.5mm2毎の最大結晶粒径と最小結晶粒径の差の平均が10μm以下である電子材料用銅合金。 Co: 0.5 to 4.0% by mass, Si: 0.1 to 1.2% by mass, the balance being a copper alloy for electronic materials consisting of Cu and inevitable impurities, having an average crystal grain size of 15 A copper alloy for electronic materials having an average difference of 10 μm or less between the maximum crystal grain size and the minimum crystal grain size for each observation field 0.5 mm 2 ˜30 μm.
- 更にCrを最大0.5質量%含有する請求項1に記載の電子材料用銅合金。 Furthermore, the copper alloy for electronic materials of Claim 1 which contains 0.5 mass% of Cr at the maximum.
- 更にMg、Mn、Ag、及びPから選択される1種又は2種以上を総計で最大0.5質量%含有する請求項1又は2に記載の電子材料用銅合金。 Furthermore, the copper alloy for electronic materials of Claim 1 or 2 which contains a maximum of 0.5 mass% of the 1 type (s) or 2 or more types selected from Mg, Mn, Ag, and P in total.
- 更にSn及びZnから選択される1種又は2種を総計で最大2.0質量%含有する請求項1~3何れか一項に記載の電子材料用銅合金。 The copper alloy for electronic materials according to any one of claims 1 to 3, further comprising a total of 2.0% by mass of one or two selected from Sn and Zn in total.
- 更にAs、Sb、Be、B、Ti、Zr、Al及びFeから選択される1種又は2種以上を総計で最大2.0質量%含有する請求項1~4何れか一項に記載の電子材料用銅合金。 The electron according to any one of claims 1 to 4, further comprising a total of 2.0% by mass in total of one or more selected from As, Sb, Be, B, Ti, Zr, Al and Fe. Copper alloy for materials.
- -所望の組成をもつインゴットを溶解鋳造する工程1と、
-950℃~1050℃で1時間以上加熱後に熱間圧延を行い、熱間圧延終了時の温度を850℃以上とし、850℃から400℃までの平均冷却速度を15℃/s以上として冷却する工程2と、
-加工度70%以上の冷間圧延工程3と、
-350~500℃で1~24時間加熱する時効処理工程4と、
-950~1050℃で溶体化処理を行い、材料温度が850℃から400℃まで低下するときの平均冷却速度を15℃/s以上として冷却する工程5と、
-随意的な冷間圧延工程6と、
-時効処理工程7と、
-随意的な冷間圧延工程8と、
を順に行うことを含む請求項1~5何れか一項に記載の銅合金の製造方法。 -Step 1 of melt casting an ingot having the desired composition;
Perform hot rolling after heating at −950 ° C. to 1050 ° C. for 1 hour or longer, set the temperature at the end of hot rolling to 850 ° C. or higher, and cool at an average cooling rate from 850 ° C. to 400 ° C. to 15 ° C./s or higher. Step 2 and
-Cold rolling step 3 with a working degree of 70% or more;
An aging treatment step 4 of heating at −350 to 500 ° C. for 1 to 24 hours;
Performing a solution treatment at −950 to 1050 ° C., and cooling at an average cooling rate of 15 ° C./s or higher when the material temperature decreases from 850 ° C. to 400 ° C .; and
-Optional cold rolling process 6;
-Aging treatment step 7;
-Optional cold rolling process 8;
The method for producing a copper alloy according to any one of claims 1 to 5, comprising sequentially performing the steps. - 請求項1~5の何れか一項に記載の銅合金を備えた伸銅品。 A drawn copper product comprising the copper alloy according to any one of claims 1 to 5.
- 請求項1~5の何れか一項に記載の銅合金を備えた電子機器部品。 Electronic component comprising the copper alloy according to any one of claims 1 to 5.
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CN2010800020310A CN102099499B (en) | 2009-03-31 | 2010-02-17 | Cu-Co-Si copper alloy for use in electronics, and manufacturing method therefor |
EP10758330.4A EP2415887B1 (en) | 2009-03-31 | 2010-02-17 | Cu-co-si copper alloy for use in electronics, and manufacturing method therefor |
KR1020117011427A KR101317096B1 (en) | 2009-03-31 | 2010-02-17 | Cu-Co-Si COPPER ALLOY FOR USE IN ELECTRONICS, AND MANUFACTURING METHOD THEREFOR |
US13/254,382 US20120031533A1 (en) | 2009-03-31 | 2010-02-17 | Cu-Co-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME |
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CN103339273A (en) * | 2011-03-28 | 2013-10-02 | Jx日矿日石金属株式会社 | Cu-si-co-base copper alloy for electronic materials and method for producing same |
CN104342582A (en) * | 2013-07-31 | 2015-02-11 | Jx日矿日石金属株式会社 | Cu-Co-Si-based copper alloy strip and method of manufacturing the same |
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