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WO2010110567A2 - Pile solaire et son procédé de fabrication - Google Patents

Pile solaire et son procédé de fabrication Download PDF

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Publication number
WO2010110567A2
WO2010110567A2 PCT/KR2010/001750 KR2010001750W WO2010110567A2 WO 2010110567 A2 WO2010110567 A2 WO 2010110567A2 KR 2010001750 W KR2010001750 W KR 2010001750W WO 2010110567 A2 WO2010110567 A2 WO 2010110567A2
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WIPO (PCT)
Prior art keywords
solar cell
electrode
photoactive layer
light
layer
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PCT/KR2010/001750
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English (en)
Korean (ko)
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WO2010110567A3 (fr
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박재근
이수환
김달호
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한양대학교 산학협력단
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Publication of WO2010110567A2 publication Critical patent/WO2010110567A2/fr
Publication of WO2010110567A3 publication Critical patent/WO2010110567A3/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a solar cell and a method for manufacturing the same, and more particularly, a solar cell and a photovoltaic cell which improve light absorption and improve photoelectric conversion efficiency by reducing light loss emitted from the outside by reflecting light incident from the outside. It relates to a manufacturing method.
  • solar cells which are photovoltaic devices that convert sunlight into electrical energy, are endless and environmentally friendly, and their importance is increasing over time.
  • organic solar cells can be manufactured by spin coating, inkjet printing, roll coating, or doctor blade method, so the manufacturing process is simple, low manufacturing cost, large area can be coated, and thin film can be formed even at low temperature. It is possible to use almost all kinds of substrates such as glass substrates and plastic substrates.
  • various types of solar cells such as plastic molded products such as curved surfaces and spherical surfaces, may be manufactured without bending the substrate, and may be bent or folded to be convenient to carry. By utilizing these advantages, it is convenient to attach to clothes, bags, or portable electrical and electronic products.
  • the polymer blend thin film has high transparency to light and can be attached to a glass window of a building or a car window so that the outside can be produced while generating power, and thus may have a much higher application range than an opaque silicon solar cell.
  • organic solar cells are not suitable for practical applications because of their low power conversion efficiency. Accordingly, various studies for increasing the power conversion efficiency of the organic solar cell have been conducted.
  • the process of absorbing light by the organic solar cell according to the prior art as shown in Figure 1, the electron donor (doner, doner) in the photoactive layer while the light incident from the outside passes through the photoactive layer (3) ) Is absorbed by the second electrode, and the non-absorbed light is reflected by the second electrode 4 and again absorbed while passing through the photoactive layer.
  • the light that is not reabsorbed is emitted to the outside again as it causes light loss, which is a factor to reduce the photoelectric conversion efficiency of the solar cell.
  • the nanocrystal is preferably made of any one material selected from gold, aluminum, copper, silver, nickel or alloys thereof, calcium / aluminum alloys, magnesium / silver alloys, and aluminum / lithium alloys.
  • the nanocrystals have a diameter of 1 to 30 nm.
  • the photoactive layer preferably comprises an electron donor and an electron acceptor.
  • the electron donor may be P3HT (poly (3-hexylthiophene)), polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy-4- (0-dispersed 1) -2,5- Phenylene-vinylene), polyindole, polycarbazole, polypyridazine, polyisothianaphthalene, polyphenylene sulfide, polyvinylpyridine, polythiophene, polyfluorene, polypyridine, and derivatives thereof
  • the electron acceptor is preferably a fullerene or a fullerene derivative.
  • It may include a hole transport layer formed between the first electrode and the photoactive layer.
  • It may include a blocking layer formed between the photoactive layer and the second electrode.
  • a method of manufacturing a solar cell having a photoactive layer formed between a first electrode and a second electrode comprising: (a) blending an electron donor, an electron acceptor, and a nanocrystal in an organic solvent to produce a photoactive layer material; (b) forming the prepared photoactive layer material as a photoactive layer between the first electrode and the second electrode.
  • the step (b) is preferably performed by spin coating the photoactive layer material on the first electrode and then annealing in a nitrogen atmosphere.
  • the nanocrystals are dispersed and formed in the photoactive layer, and the light is re-reflected by the nanocrystals a plurality of times to increase the optical path in the solar cell device, and as a result photoelectric conversion The efficiency can be improved.
  • FIG. 1 is a view showing an optical path in a solar cell according to the prior art.
  • FIG. 2 is a cross-sectional view showing a solar cell according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a solar cell according to another embodiment of the present invention.
  • FIG. 4 is a view illustrating an optical path in a solar cell according to embodiments of the present invention.
  • FIG. 5 is a diagram illustrating a solar cell manufactured according to an embodiment of the present invention.
  • FIG. 6 is a graph showing the characteristics of a conventional solar cell device without a nanocrystal.
  • FIG. 7 is a graph showing device characteristics of a solar cell manufactured according to an embodiment of the present invention.
  • FIG. 8 is a graph showing the characteristics of the solar cell device of the present invention according to the weight ratio of nanocrystals.
  • FIG. 2 is a cross-sectional view showing a solar cell according to an embodiment of the present invention
  • Figure 3 is a cross-sectional view showing a solar cell according to another embodiment of the present invention
  • Figure 4 is a solar cell according to embodiments of the present invention
  • Figure 5 shows the optical path of Figure 5 shows a solar cell manufactured according to an embodiment of the present invention
  • Figure 6 is a graph showing the characteristics of a conventional solar cell device without nanocrystals
  • Figure 7 is the present invention
  • Graph showing the device characteristics of the solar cell manufactured according to an embodiment of Figure 8 is a graph showing the characteristics of the solar cell device of the present invention according to the weight ratio of the nanocrystals.
  • the solar cell according to the exemplary embodiment of the present invention includes a substrate 10, a first electrode 20, a photoactive layer 30, and a second electrode 40.
  • One or more nanocrystals 31 are dispersed in layer 30.
  • the substrate 10 is not particularly limited as long as it has transparency, and may be a transparent inorganic substrate such as quartz and glass, or polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polystyrene (PS), poly It may be a transparent plastic substrate selected from the group consisting of propylene (PP), polyimide (PI), polyethylenesulfonate (PES), polyoxymethylene (POM), AS resin, ABS resin.
  • the substrate 10 preferably has a transmittance of at least 70% or more, preferably 80% or more in the visible light wavelength band.
  • the first electrode 20 is a path through which the light passing through the substrate 10 reaches the photoactive layer 30, a material having high transparency is preferable.
  • the conductive material forming the first electrode 20 include indium tin oxide (ITO), gold, silver, florin doped tin oxide (FTO), ZnO-Ga2O3, ZnO-Al2O3, SnO2-Sb2O3, and the like. But it is not limited thereto.
  • the photoactive layer 30 having the electron donor and the electron acceptor material blended is formed on the upper part of the first electrode 20 by spin coating or the like, and according to a preferred embodiment of the present invention, the photoactive layer At least one nanocrystal 31 is dispersed in 30.
  • the nanocrystal 31 is preferably made of a material with high reflectivity to light. Specifically, it is preferable that the reflectivity of light is made of a material of 50% or more. Here, the reflectivity of light means the ratio of the amount of light incident to the metal and the amount of reflected light.
  • Such materials include, but are not limited to, gold, aluminum, copper, silver, nickel or alloys thereof, calcium / aluminum alloys, magnesium / silver alloys, aluminum / lithium alloys, and the like.
  • the nanocrystals 31 may have a diameter of 1 to 30 nm.
  • the diameter of the nanocrystals is formed to be 1 nm or more, the light reflected from the second electrode 40 is not reflected again and the risk of loss is reduced, which is efficient in terms of light resorption.
  • the diameter of the nanocrystals is formed to be 30 nm or less, there is less fear that light loss is caused by reflecting light incident from the first electrode 20 to the photoactive layer 30.
  • the thickness of the photoactive layer 30 is 70-150 nm normally, when the diameter of a nanocrystal exceeds 30 nm, the space which a nanocrystal occupies is large, and there exists a possibility that the light absorption function in a photoactive layer will be impaired.
  • the nano crystal 31 may be dispersed in the photoactive layer 30.
  • the nanocrystals 31 are photoactive with the first electrode 20.
  • the layers 30 may be formed in the same plane in a form in which they are distributed to each other near the boundary surface of the layer 30.
  • the nanocrystal 31 may be positioned near the interface between the first electrode 20 and the photoactive layer 30 and near the interface between the second electrode 40 and the photoactive layer 30.
  • Examples of the electron donor include P3HT (poly (3-hexylthiophene)), polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy-4- (0-dispersed 1) -2,5-phenylene -Vinylene), polyindole, polycarbazole, polypyridazine, polyisothianaphthalene, polyphenylene sulfide, polyvinylpyridine, polythiophene, polyfluorene, polypyridine, and derivatives thereof
  • the electron acceptor is preferably a fullerene or a fullerene derivative.
  • the second electrode 40 is formed using a material having high reflectivity and low resistance to reabsorb light that is incident through the first electrode but is not absorbed in the photoactive layer.
  • the material of the second electrode 40 may be a material having a lower work function than that of the first electrode, specifically magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, aluminum, silver, tin, and lead. Including, but not limited to, the same metals, or alloys thereof.
  • the solar cell according to another embodiment of the present invention includes a hole transport layer 50 formed between the first electrode 20 and the photoactive layer 30 in the structure of the solar cell described above;
  • a blocking layer 60 and an electron injection layer 70 formed between the photoactive layer 30 and the second electrode 40 may be included. That is, between the first electrode 20 and the second electrode 40, the hole transport layer 50 / photoactive layer 30, the photoactive layer 30 / electron injection layer 70, and the hole transport layer 50. ),
  • the photoactive layer 30 / the electron injection layer 70, or the hole transport layer 50 / photoactive layer 30 / blocking layer 60 / the electron injection layer 70, a variety of laminated structures can be formed Can be.
  • the hole transport layer 50 is preferably made of a material that can facilitate the movement of holes.
  • the conductive polymer forming the hole transport layer 50 include PEDOT (poly (3,4-ethylenedioxythiophene)), PSS (poly (styrenesulfonate)), polyaniline, phthalocyanine, pentacene, polydiphenylacetylene , Poly (t-butyl) diphenylacetylene, poly (trifluoromethyl) diphenylacetylene, Cu-PC (copper phthalocyanine) poly (bistrifluoromethyl) acetylene, polybis (T-butyldiphenyl) acetylene, Poly (trimethylsilyl) diphenylacetylene, poly (carbazole) diphenylacetylene, polydiacetylene, polyphenylacetylene, polypyridineacetylene, poly
  • the blocking layer 60 prevents holes separated from the photoactive layer 30 and excitons not separated from moving to the second electrode 40 to be recombined again.
  • the blocking layer 60 may be made of a material having a high highest occupied molecular orbital (HOMO) energy level, such as, for example, bathocuproine (BCP).
  • HOMO high highest occupied molecular orbital
  • the electron injection layer 70 allows electrons separated from the exciton to be well injected into the second electrode 40, and also improves the interfacial property between the photoactive layer or blocking layer and the second electrode, and is mainly LiF. , Liq and the like are used.
  • the solar cell according to the embodiments of the present invention is formed by dispersing one or more nanocrystals in the photoactive layer 30, as shown in FIG. 4, which is reflected by the second electrode 40.
  • the solar cell is formed by dispersing one or more nanocrystals in the photoactive layer 30, as shown in FIG. 4, which is reflected by the second electrode 40.
  • the solar cell of the present invention As shown in FIG. 4, light incident through the first electrode (not shown) is absorbed (first light absorption) in the photoactive layer 30, and light that is not absorbed is The light reflected by the second electrode 40 is absorbed by the photoactive layer again (second light absorption), and the light that is not absorbed by the second light absorption is reflected back by the nanocrystal and absorbed by the photoactive layer 30 again (the second light absorption). 3), and this process is repeated to maximize the light absorption rate.
  • the present invention has a light path in which the light flowing into the photoactive layer is reflected two or more times at both interface regions of the photoactive layer and absorbs the light three times or more, thereby minimizing the optical loss, and thereby the photoelectric conversion efficiency. Will improve.
  • the solar cell manufacturing method includes forming a first electrode on a substrate, forming a photoactive layer on the first electrode, and forming a second electrode on the photoactive layer.
  • forming the photoactive layer comprises (a) blending an electron donor, an electron acceptor, and a nanocrystal in an organic solvent to produce a photoactive layer material, and (b) the photoactive layer material prepared above. Forming a photoactive layer between the first electrode and the second electrode.
  • a material that can be used as an electron donor, a material that can be used as an electron acceptor, and nanocrystals are blended into an organic solvent.
  • an organic solvent such as chlorobenzene, benzene, chloroform or THF (Tetrahydrofuran) may be used.
  • Materials that can be used as the electron donor / electron acceptor are the same as described above, so a description thereof will be omitted.
  • the polythiophene derivative which is a conductive polymer material as the electron donor, the fullerene derivative, and the nanocrystal as the electron acceptor are blended at a predetermined ratio for a predetermined time.
  • the solar cell may be manufactured by forming a second electrode on the photoactive layer.
  • the method may further include forming a hole transport layer between the first electrode and the photoactive layer, and forming a blocking layer and an electron injection layer between the photoactive layer and the second electrode. Steps may be further included. This is not particularly limited in the present invention, and any method known in the art can be used without limitation.
  • silver nanocrystals are prepared by the method described below.
  • TOAB tetraoctylammonium bromide
  • nanocrystallization is promoted at a low temperature of about -18 ° C.
  • Silver nanocrystals prepared through the above steps have a diameter of about 3 ⁇ 7 nm.
  • P3HT, PCBM, and the prepared silver nanocrystals were blended in 10 ml of chlorobenzene for at least 72 hours at a weight ratio of 2: 1: 2, respectively, to prepare a photoactive layer material.
  • PEDOT-PSS which is a material of the hole transporting layer
  • IPA isopropyl alcohol
  • a BCP bathoproine
  • LiF lithium fluoride
  • Al aluminum
  • the characteristics of the solar cell are evaluated using open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF) and efficiency.
  • the open circuit voltage Voc is a voltage generated when light is irradiated without an external electrical load, that is, a voltage when current is 0, and the short circuit current Jsc is generated when light is irradiated by a shorted electrical contact.
  • Current is defined as the current caused by light when no voltage is applied.
  • fidelity FF is defined as the product of the current and voltage to which the current and voltage are applied and changed according to the product of the open circuit voltage Voc and the short circuit current Jsc. This fidelity FF is always 1 or less because the open circuit voltage Voc and the short circuit current Jsc are not obtained at the same time.
  • the photoelectric conversion efficiency is a value obtained by dividing the product of the open circuit voltage (Voc), the short-circuit current (Jsc) and the fidelity (FF) by the intensity of the irradiated light is defined by Equation 1 below.
  • 6 and 7 compare the device characteristics of the conventional solar cell and the solar cell of the present invention prepared above.
  • 6 is a graph showing the characteristics of a conventional solar cell device without a nanocrystal.
  • Jsc is 15.34 mA / cm 2
  • Voc is 0.645 eV
  • FF is 0.672.
  • PCE power conversion efficiency
  • . 7 is a graph showing device characteristics of a solar cell manufactured according to an embodiment of the present invention. Referring to FIG. 7, Jsc is 17.46 mA / cm 2 , Voc is 0.665 eV, and FF is 0.635. Substituting this in Equation 1, the photoelectric conversion efficiency is 7.368%.
  • the optically active when the layer is nanocrystal is dispersed, or as compared to the case that in Jsc is 15.34 mA / cm 2 to 17.46 mA / cm 2 can confirm the improvement of about 14%, the efficiency of the solar cell is at 6.648% It can be seen that the improvement was about 10.3% to 7.368%.
  • FIG. 8 looks at the change in the characteristics of the solar cell device according to the weight ratio of the nanocrystals.
  • the graph shown in FIG. 8 shows the change in the weight ratio of silver nanocrystals (Ag) in the photoactive layer 'P3HT: PCBM: Ag' of the ITO / PEDOT: PSS / P3HT: PCBM: Ag / BCP / LiF / Al structured solar cell. It is a graph showing the change in light absorption rate for each wavelength region.
  • the parts shown as '- ⁇ -' are P3HT, PCBM, and silver nanocrystals are respectively 2: 1: 1 weight ratio (hereinafter '1 weight ratio'), and the parts shown as '- ⁇ -' are P3HT, PCBM,
  • the silver nanocrystals have a 2: 1: 2 weight ratio (hereinafter referred to as '2 weight ratio'), and the portions shown as '- ⁇ -' are P3HT, PCBM, and silver nanocrystals respectively have a 2: 1: 3 weight ratio (hereinafter '3').

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention a trait à une pile solaire pour laquelle il est possible de réduire la perte optique causée lorsque la lumière incidente provenant d'une source extérieure est réfléchie et orientée de nouveau vers l'extérieur de manière à améliorer l'absorption optique et l'efficacité de la transformation photoélectrique ; la présente invention a également trait à un procédé de fabrication de ladite pile solaire. La pile solaire selon la présente invention comprend : une première électrode formée sur un substrat ; une couche photoactive qui est formée sur la première électrode et dans laquelle des nanocristaux sont distribués ; et une seconde électrode formée sur la couche photoactive.
PCT/KR2010/001750 2009-03-24 2010-03-22 Pile solaire et son procédé de fabrication WO2010110567A2 (fr)

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KR10-2009-0024955 2009-03-24
KR1020090024955A KR20100106779A (ko) 2009-03-24 2009-03-24 태양 전지 및 그 제조 방법

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WO2010110567A2 true WO2010110567A2 (fr) 2010-09-30
WO2010110567A3 WO2010110567A3 (fr) 2010-12-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013083713A1 (fr) * 2011-12-06 2013-06-13 Novaled Ag Dispositif photovoltaïque organique

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101646727B1 (ko) * 2013-10-10 2016-08-08 한양대학교 산학협력단 태양 전지 및 그 제조 방법

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20020189666A1 (en) * 2001-06-11 2002-12-19 Forrest Stephen R. Solar cells using fullerenes
JP2006527490A (ja) * 2003-06-12 2006-11-30 コナルカ テクノロジーズ インコーポレイテッド 共有する有機電極を備えたタンデム型太陽電池
KR20070059082A (ko) * 2004-08-11 2007-06-11 더 트러스티즈 오브 프린스턴 유니버시티 유기 감광성 장치
KR20080064438A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 고분자 태양전지 및 그의 제조방법
JP2009505426A (ja) * 2005-08-15 2009-02-05 コナルカ テクノロジーズ インコーポレイテッド 外部回路への相互接続を有する光起電力電池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020189666A1 (en) * 2001-06-11 2002-12-19 Forrest Stephen R. Solar cells using fullerenes
JP2006527490A (ja) * 2003-06-12 2006-11-30 コナルカ テクノロジーズ インコーポレイテッド 共有する有機電極を備えたタンデム型太陽電池
KR20070059082A (ko) * 2004-08-11 2007-06-11 더 트러스티즈 오브 프린스턴 유니버시티 유기 감광성 장치
JP2009505426A (ja) * 2005-08-15 2009-02-05 コナルカ テクノロジーズ インコーポレイテッド 外部回路への相互接続を有する光起電力電池
KR20080064438A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 고분자 태양전지 및 그의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013083713A1 (fr) * 2011-12-06 2013-06-13 Novaled Ag Dispositif photovoltaïque organique

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KR20100106779A (ko) 2010-10-04

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