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WO2010022065A3 - Memory devices and methods of forming the same - Google Patents

Memory devices and methods of forming the same Download PDF

Info

Publication number
WO2010022065A3
WO2010022065A3 PCT/US2009/054182 US2009054182W WO2010022065A3 WO 2010022065 A3 WO2010022065 A3 WO 2010022065A3 US 2009054182 W US2009054182 W US 2009054182W WO 2010022065 A3 WO2010022065 A3 WO 2010022065A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory
memory devices
methods
forming
same
Prior art date
Application number
PCT/US2009/054182
Other languages
French (fr)
Other versions
WO2010022065A2 (en
Inventor
Jun Liu
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Priority to EP09808723A priority Critical patent/EP2324503B1/en
Priority to CN2009801323731A priority patent/CN102124565B/en
Publication of WO2010022065A2 publication Critical patent/WO2010022065A2/en
Publication of WO2010022065A3 publication Critical patent/WO2010022065A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.
PCT/US2009/054182 2008-08-21 2009-08-18 Memory devices and methods of forming the same WO2010022065A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09808723A EP2324503B1 (en) 2008-08-21 2009-08-18 Memory devices and methods of forming the same
CN2009801323731A CN102124565B (en) 2008-08-21 2009-08-18 Memory devices and methods of forming the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/195,510 US7772583B2 (en) 2008-08-21 2008-08-21 Memory devices and methods of forming the same
US12/195,510 2008-08-21

Publications (2)

Publication Number Publication Date
WO2010022065A2 WO2010022065A2 (en) 2010-02-25
WO2010022065A3 true WO2010022065A3 (en) 2010-05-14

Family

ID=41695506

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/054182 WO2010022065A2 (en) 2008-08-21 2009-08-18 Memory devices and methods of forming the same

Country Status (6)

Country Link
US (6) US7772583B2 (en)
EP (2) EP2455971B1 (en)
KR (1) KR101066733B1 (en)
CN (1) CN102124565B (en)
TW (1) TWI430488B (en)
WO (1) WO2010022065A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7852658B2 (en) * 2008-03-14 2010-12-14 Micron Technology, Inc. Phase change memory cell with constriction structure
US7772583B2 (en) * 2008-08-21 2010-08-10 Micron Technology, Inc. Memory devices and methods of forming the same
US8097870B2 (en) * 2008-11-05 2012-01-17 Seagate Technology Llc Memory cell with alignment structure
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
KR101604041B1 (en) * 2009-08-27 2016-03-16 삼성전자주식회사 Non-volatile memory device having phase-change material
US8921960B2 (en) 2012-07-27 2014-12-30 Hewlett-Packard Development Company, L.P. Memristor cell structures for high density arrays
US10084016B2 (en) 2013-11-21 2018-09-25 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US9614007B2 (en) 2015-07-20 2017-04-04 Micron Technology, Inc. Memory arrays
FR3053536B1 (en) * 2016-07-04 2019-07-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives SWITCH COMPRISING A STRUCTURE BASED ON PHASE CHANGE MATERIAL (X) OF WHICH ONLY ONE PART IS ACTIVABLE
US10424374B2 (en) 2017-04-28 2019-09-24 Micron Technology, Inc. Programming enhancement in self-selecting memory
US10541364B2 (en) * 2018-02-09 2020-01-21 Micron Technology, Inc. Memory cells with asymmetrical electrode interfaces
US10693065B2 (en) * 2018-02-09 2020-06-23 Micron Technology, Inc. Tapered cell profile and fabrication
US10854813B2 (en) 2018-02-09 2020-12-01 Micron Technology, Inc. Dopant-modulated etching for memory devices
US10424730B2 (en) 2018-02-09 2019-09-24 Micron Technology, Inc. Tapered memory cell profiles
US11367833B2 (en) 2018-09-28 2022-06-21 Intel Corporation Memory cells having increased structural stability
KR102630031B1 (en) 2018-10-05 2024-01-30 삼성전자주식회사 Variable resistance memory device
KR102799928B1 (en) * 2018-11-01 2025-04-25 에스케이하이닉스 주식회사 Method for manufacturing semiconductor device
KR102737502B1 (en) * 2019-01-28 2024-12-05 삼성전자주식회사 Semiconductor device including data storage pattern and method of manufacturing the same
JP2021150626A (en) * 2020-03-24 2021-09-27 キオクシア株式会社 Memory device and method for manufacturing memory device

Citations (4)

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KR100640002B1 (en) * 2005-09-06 2006-11-01 한국전자통신연구원 Thin film patterning method of phase change material and manufacturing method of phase change memory device using same
KR100757415B1 (en) * 2006-07-13 2007-09-10 삼성전자주식회사 Germanium compound and manufacturing method thereof, phase change memory device using the germanium compound and forming method thereof
JP2007243169A (en) * 2006-02-07 2007-09-20 Qimonda Ag Phase change memory cell having heat insulation mechanism
KR20080069036A (en) * 2007-01-22 2008-07-25 삼성전자주식회사 Phase change memory cell having thermal barrier and manufacturing method thereof

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US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
JP2006032729A (en) * 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd Nonvolatile memory and its manufacturing method
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KR100604923B1 (en) * 2005-01-04 2006-07-28 삼성전자주식회사 Method for forming titanium aluminum nitride film by atomic layer deposition method and phase change memory device having a heating electrode manufactured using the same
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JP5159270B2 (en) * 2007-11-22 2013-03-06 株式会社東芝 Nonvolatile semiconductor memory device and manufacturing method thereof
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US7834342B2 (en) * 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
KR100640002B1 (en) * 2005-09-06 2006-11-01 한국전자통신연구원 Thin film patterning method of phase change material and manufacturing method of phase change memory device using same
JP2007243169A (en) * 2006-02-07 2007-09-20 Qimonda Ag Phase change memory cell having heat insulation mechanism
KR100757415B1 (en) * 2006-07-13 2007-09-10 삼성전자주식회사 Germanium compound and manufacturing method thereof, phase change memory device using the germanium compound and forming method thereof
KR20080069036A (en) * 2007-01-22 2008-07-25 삼성전자주식회사 Phase change memory cell having thermal barrier and manufacturing method thereof

Also Published As

Publication number Publication date
EP2455971A1 (en) 2012-05-23
US10312437B2 (en) 2019-06-04
EP2324503A2 (en) 2011-05-25
TW201017947A (en) 2010-05-01
WO2010022065A2 (en) 2010-02-25
EP2455971B1 (en) 2014-06-25
EP2324503B1 (en) 2012-08-15
US20190280200A1 (en) 2019-09-12
US8124955B2 (en) 2012-02-28
US9748475B2 (en) 2017-08-29
US20150155481A1 (en) 2015-06-04
US20100283030A1 (en) 2010-11-11
US8987045B2 (en) 2015-03-24
KR20110033956A (en) 2011-04-01
CN102124565A (en) 2011-07-13
CN102124565B (en) 2013-06-12
US11050019B2 (en) 2021-06-29
KR101066733B1 (en) 2011-09-21
US20170346003A1 (en) 2017-11-30
US20120135581A1 (en) 2012-05-31
TWI430488B (en) 2014-03-11
EP2324503A4 (en) 2011-11-30
US7772583B2 (en) 2010-08-10
US20100044664A1 (en) 2010-02-25

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