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WO2010005929A3 - Ensemble sonde électrostatique à couplage capacitif (cce) passive pour détecter des événements de formation d'arc électrique in situ dans une chambre de traitement au plasma - Google Patents

Ensemble sonde électrostatique à couplage capacitif (cce) passive pour détecter des événements de formation d'arc électrique in situ dans une chambre de traitement au plasma Download PDF

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Publication number
WO2010005929A3
WO2010005929A3 PCT/US2009/049756 US2009049756W WO2010005929A3 WO 2010005929 A3 WO2010005929 A3 WO 2010005929A3 US 2009049756 W US2009049756 W US 2009049756W WO 2010005929 A3 WO2010005929 A3 WO 2010005929A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
arrangement
detecting
plasma processing
probe arrangement
Prior art date
Application number
PCT/US2009/049756
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English (en)
Other versions
WO2010005929A2 (fr
Inventor
Jean-Paul Booth
Douglas L. Keil
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2011517509A priority Critical patent/JP5734184B2/ja
Priority to KR1020117000366A priority patent/KR101606734B1/ko
Priority to CN200980126995.3A priority patent/CN102714167B/zh
Publication of WO2010005929A2 publication Critical patent/WO2010005929A2/fr
Publication of WO2010005929A3 publication Critical patent/WO2010005929A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/24Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605Measuring capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/34Testing dynamo-electric machines
    • G01R31/343Testing dynamo-electric machines in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00Details of emergency protective circuit arrangements
    • H02H1/0007Details of emergency protective circuit arrangements concerning the detecting means
    • H02H1/0015Using arc detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/1272Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of cable, line or wire insulation, e.g. using partial discharge measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/34Testing dynamo-electric machines
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/44Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to the rate of change of electrical quantities

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un ensemble pour détecter des événements de formation d'arc électrique à l'intérieur d'une chambre de traitement au plasma pendant le traitement d'un substrat. Ledit ensemble comprend un ensemble sonde, qui est disposé sur une surface de la chambre de traitement et qui est conçu pour mesurer au moins un paramètre de traitement au plasma. Ledit ensemble sonde comprend un capteur orienté face au plasma et un condensateur de mesure, le capteur orienté face au plasma étant couplé à une première plaque du condensateur de mesure. Ledit ensemble sonde comprend également un ensemble de détection qui est couplé à une deuxième plaque du condensateur de mesure, l'ensemble de détection étant conçu pour convertir un courant induit passant dans le condensateur de mesure en un ensemble de signaux numériques, qui est traité pour détecter les événements de formation d'arc électrique in situ.
PCT/US2009/049756 2008-07-07 2009-07-07 Ensemble sonde électrostatique à couplage capacitif (cce) passive pour détecter des événements de formation d'arc électrique in situ dans une chambre de traitement au plasma WO2010005929A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011517509A JP5734184B2 (ja) 2008-07-07 2009-07-07 プラズマ処理チャンバ内のその場(in−situ)アーク放電事象を検出するための構成、及び、アーク放電事象を検出する方法
KR1020117000366A KR101606734B1 (ko) 2008-07-07 2009-07-07 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (cce) 프로브 장치
CN200980126995.3A CN102714167B (zh) 2008-07-07 2009-07-07 用于检测等离子处理室内的原位电弧放电事件的被动电容耦合静电(cce)探针装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7873108P 2008-07-07 2008-07-07
US61/078,731 2008-07-07

Publications (2)

Publication Number Publication Date
WO2010005929A2 WO2010005929A2 (fr) 2010-01-14
WO2010005929A3 true WO2010005929A3 (fr) 2010-04-22

Family

ID=41504594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/049756 WO2010005929A2 (fr) 2008-07-07 2009-07-07 Ensemble sonde électrostatique à couplage capacitif (cce) passive pour détecter des événements de formation d'arc électrique in situ dans une chambre de traitement au plasma

Country Status (6)

Country Link
US (2) US8159233B2 (fr)
JP (1) JP5734184B2 (fr)
KR (1) KR101606734B1 (fr)
CN (1) CN102714167B (fr)
TW (1) TWI511622B (fr)
WO (1) WO2010005929A2 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US8849585B2 (en) * 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
TWI460439B (zh) * 2008-07-07 2014-11-11 Lam Res Corp 用來辨識電漿處理系統之處理腔室內的解除吸附情形之信號擾動特性的方法及裝置、及其電腦可讀儲存媒體
KR101606734B1 (ko) 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (cce) 프로브 장치
CN102084472B (zh) * 2008-07-07 2013-07-03 朗姆研究公司 用于表征等离子体处理室内的膜的射频偏置电容耦合静电(rfb-cce)探针装置
TWI467623B (zh) 2008-07-07 2015-01-01 Lam Res Corp 於電漿處理系統之處理腔室內識別一穩定電漿的方法及裝置、及其電腦可讀儲存媒體
US8179152B2 (en) 2008-07-07 2012-05-15 Lam Research Corporation Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
TWI494030B (zh) * 2008-07-07 2015-07-21 Lam Res Corp 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置
KR20110083823A (ko) * 2010-01-15 2011-07-21 삼성전자주식회사 아크노이즈 검출 회로, 이를 포함하는 광원 구동 장치 및 이를 이용하는 광원 구동 방법
CN102346229A (zh) * 2010-08-04 2012-02-08 河南省电力公司安阳供电公司 电力塔电弧放电监测系统
KR101303040B1 (ko) * 2012-02-28 2013-09-03 주식회사 뉴파워 프라즈마 플라즈마 챔버의 아크 검출 방법 및 장치
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
CN104871285B (zh) * 2012-12-18 2018-01-05 通快许廷格两合公司 灭弧方法和具有功率转换器的功率供送系统
US10101386B2 (en) * 2014-02-14 2018-10-16 Texas Instruments Incorporated Real time semiconductor process excursion monitor
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US10564215B2 (en) 2014-07-01 2020-02-18 Raja Technologies Inc. System and method of semiconductor characterization
US9002677B1 (en) * 2014-07-01 2015-04-07 Raja Technologies System and method of semiconductor characterization
US10352989B2 (en) 2014-07-01 2019-07-16 Raja Technologies Inc. System and method of semiconductor characterization
CN104360522B (zh) * 2014-11-25 2018-05-04 合肥鑫晟光电科技有限公司 液晶模组及显示装置
EP3035365A1 (fr) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Procédé de détection d'un arc se produisant au cours de l'alimentation électrique d'un traitement au plasma, unité de commande pour une alimentation électrique de plasma et alimentation en plasma
CN106238870B (zh) * 2016-07-26 2018-02-23 北京工业大学 一种对进式电弧特性检测装置及方法
CN110870039B (zh) * 2017-07-07 2022-09-16 先进能源工业公司 等离子体功率输送系统的周期间控制系统及其操作方法
US11153960B1 (en) * 2018-06-08 2021-10-19 Innoveering, LLC Plasma-based electro-optical sensing and methods
US11156644B2 (en) 2019-01-03 2021-10-26 International Business Machines Corporation In situ probing of a discrete time analog circuit
CN115835467B (zh) * 2022-12-26 2024-03-08 武汉大学 一种基于主被动融合的等离子体三维定位系统及方法
US12176190B2 (en) 2023-03-07 2024-12-24 Applied Materials, Inc. Arc management algorithm of RF generator and match box for CCP plasma chambers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936413A (en) * 1995-09-19 1999-08-10 Centre National De La Recherche Scientifique Method and device for measuring an ion flow in a plasma
KR20040024720A (ko) * 2002-09-16 2004-03-22 삼성전자주식회사 건식 식각 장치의 플라즈마 감지 시스템
JP2008016517A (ja) * 2006-07-03 2008-01-24 Ritsumeikan プラズマ異常放電診断方法、プラズマ異常放電診断システム及びコンピュータプログラム
KR20080048310A (ko) * 2006-11-28 2008-06-02 삼성전자주식회사 반도체 소자 제조용 플라즈마 장치

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
US2006A (en) * 1841-03-16 Clamp for crimping leather
US2003A (en) * 1841-03-12 Improvement in horizontal windivhlls
US2005A (en) * 1841-03-16 Improvement in the manner of constructing molds for casting butt-hinges
US2008A (en) * 1841-03-18 Gas-lamp eok conducting gas pkom ah elevated buhner to one below it
US2007A (en) * 1841-03-16 Improvement in the mode of harvesting grain
US1000000A (en) * 1910-04-25 1911-08-08 Francis H Holton Vehicle-tire.
US4595487A (en) 1985-03-18 1986-06-17 Kennecott Corporation Sensing probe holder system
US5473162A (en) * 1987-10-26 1995-12-05 Baylor University Infrared emission detection of a gas
KR0129663B1 (ko) 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
US4982067A (en) 1988-11-04 1991-01-01 Marantz Daniel Richard Plasma generating apparatus and method
DE3914065A1 (de) 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
JP2859308B2 (ja) 1989-08-02 1999-02-17 三井化学株式会社 プラズマパラメーターの測定方法
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5175472A (en) * 1991-12-30 1992-12-29 Comdel, Inc. Power monitor of RF plasma
JP3292531B2 (ja) 1993-01-15 2002-06-17 忠弘 大見 高周波励起プラズマの計測装置
JPH0737817A (ja) 1993-06-28 1995-02-07 Sony Corp プラズマ計測用プローブ及びこれを用いたプラズマ計測方法
US6345589B1 (en) 1996-03-29 2002-02-12 Applied Materials, Inc. Method and apparatus for forming a borophosphosilicate film
US6024831A (en) * 1997-08-20 2000-02-15 Vanguard International Semiconductor Corporation Method and apparatus for monitoring plasma chamber condition by observing plasma stability
JPH11354509A (ja) * 1998-04-07 1999-12-24 Seiko Epson Corp プラズマエッチングの終点検出方法及びプラズマエッチング装置
JP2000003909A (ja) 1998-06-15 2000-01-07 Kishimoto Sangyo Co Ltd 半導体デバイス用絶縁膜および半導体デバイス
JP2000031072A (ja) * 1998-07-10 2000-01-28 Seiko Epson Corp プラズマモニタ方法及び半導体製造装置
US6965506B2 (en) 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6326794B1 (en) 1999-01-14 2001-12-04 International Business Machines Corporation Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
JP2000268993A (ja) * 1999-03-15 2000-09-29 Toshiba Corp プラズマ計測用プローブ,プラズマ計測装置及びプラズマ生成装置
JP2001144071A (ja) 1999-11-10 2001-05-25 Toshiba Corp プラズマ処理方法及びその装置
US7030335B2 (en) 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
TW483037B (en) 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
JP4240259B2 (ja) 2000-08-21 2009-03-18 富士電機システムズ株式会社 プラズマ電位測定方法と測定用プローブ
JP3968211B2 (ja) 2000-08-31 2007-08-29 株式会社日立製作所 微弱磁場計測デュワー
US6833710B2 (en) * 2000-10-27 2004-12-21 Axcelis Technologies, Inc. Probe assembly for detecting an ion in a plasma generated in an ion source
KR100378187B1 (ko) 2000-11-09 2003-03-29 삼성전자주식회사 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법
JP4128339B2 (ja) * 2001-03-05 2008-07-30 株式会社日立製作所 試料処理装置用プロセスモニタ及び試料の製造方法
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US7960670B2 (en) 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
JP2002324783A (ja) * 2001-04-25 2002-11-08 Toshiba Corp 異常放電検出方法
US7374636B2 (en) 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
US7093560B2 (en) 2002-04-17 2006-08-22 Lam Research Corporation Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US20030210510A1 (en) 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
US20030213559A1 (en) 2002-05-20 2003-11-20 Applied Science And Technology, Inc. Stabilization of electronegative plasmas with feedback control of RF generator systems
AU2003239392A1 (en) * 2002-05-29 2003-12-19 Tokyo Electron Limited Method and system for data handling, storage and manipulation
US6894474B2 (en) 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
US7199327B2 (en) * 2002-06-28 2007-04-03 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
AU2003247538A1 (en) 2002-07-03 2004-01-23 Tokyo Electron Limited Method and apparatus for non-invasive measurement and analys of semiconductor plasma parameters
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7067432B2 (en) * 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
US6939726B2 (en) * 2003-08-04 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Via array monitor and method of monitoring induced electrical charging
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
JP4364667B2 (ja) 2004-02-13 2009-11-18 東京エレクトロン株式会社 溶射部材、電極、およびプラズマ処理装置
US20050212450A1 (en) * 2004-03-16 2005-09-29 Scientific Systems Research Limited Method and system for detecting electrical arcing in a plasma process powered by an AC source
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
US7334477B1 (en) * 2004-12-22 2008-02-26 Lam Research Corporation Apparatus and methods for the detection of an arc in a plasma processing system
US7571698B2 (en) 2005-01-10 2009-08-11 Applied Materials, Inc. Low-frequency bias power in HDP-CVD processes
US7319316B2 (en) 2005-06-29 2008-01-15 Lam Research Corporation Apparatus for measuring a set of electrical characteristics in a plasma
JP2007037817A (ja) 2005-08-04 2007-02-15 Matsushita Electric Ind Co Ltd 電気掃除機用集塵袋及び電気掃除機
KR20070035346A (ko) 2005-09-27 2007-03-30 삼성전자주식회사 플라즈마 감지 시스템이 구비된 플라즈마 처리장치
KR100784824B1 (ko) * 2005-11-04 2007-12-14 한국표준과학연구원 플라즈마 진단장치 및 진단방법
DE502005006550D1 (de) 2005-12-22 2009-03-12 Huettinger Elektronik Gmbh Verfahren und Vorrichtung zur Arcerkennung in einem Plasmaprozess
US7479207B2 (en) 2006-03-15 2009-01-20 Lam Research Corporation Adjustable height PIF probe
US7413672B1 (en) * 2006-04-04 2008-08-19 Lam Research Corporation Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7722778B2 (en) 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US20080008842A1 (en) * 2006-07-07 2008-01-10 Applied Materials, Inc. Method for plasma processing
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
US20090007642A1 (en) 2007-07-05 2009-01-08 Baxter International Inc. Dialysis fluid measurement method and apparatus using conductive contacts
US8849585B2 (en) 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
TWI494030B (zh) 2008-07-07 2015-07-21 Lam Res Corp 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置
TWI460439B (zh) 2008-07-07 2014-11-11 Lam Res Corp 用來辨識電漿處理系統之處理腔室內的解除吸附情形之信號擾動特性的方法及裝置、及其電腦可讀儲存媒體
US8179152B2 (en) 2008-07-07 2012-05-15 Lam Research Corporation Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
KR101606734B1 (ko) 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (cce) 프로브 장치
CN102084472B (zh) 2008-07-07 2013-07-03 朗姆研究公司 用于表征等离子体处理室内的膜的射频偏置电容耦合静电(rfb-cce)探针装置
TWI467623B (zh) 2008-07-07 2015-01-01 Lam Res Corp 於電漿處理系統之處理腔室內識別一穩定電漿的方法及裝置、及其電腦可讀儲存媒體

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936413A (en) * 1995-09-19 1999-08-10 Centre National De La Recherche Scientifique Method and device for measuring an ion flow in a plasma
KR20040024720A (ko) * 2002-09-16 2004-03-22 삼성전자주식회사 건식 식각 장치의 플라즈마 감지 시스템
JP2008016517A (ja) * 2006-07-03 2008-01-24 Ritsumeikan プラズマ異常放電診断方法、プラズマ異常放電診断システム及びコンピュータプログラム
KR20080048310A (ko) * 2006-11-28 2008-06-02 삼성전자주식회사 반도체 소자 제조용 플라즈마 장치

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US8159233B2 (en) 2012-04-17
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US9129779B2 (en) 2015-09-08
JP5734184B2 (ja) 2015-06-17
CN102714167A (zh) 2012-10-03
CN102714167B (zh) 2015-04-22
TW201010523A (en) 2010-03-01
KR20110039241A (ko) 2011-04-15
TWI511622B (zh) 2015-12-01
WO2010005929A2 (fr) 2010-01-14
US20120259562A1 (en) 2012-10-11

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