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WO2010080354A3 - Noyau semi-conducteur, dispositif photovoltaïque fibreux intégré - Google Patents

Noyau semi-conducteur, dispositif photovoltaïque fibreux intégré Download PDF

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Publication number
WO2010080354A3
WO2010080354A3 PCT/US2009/067835 US2009067835W WO2010080354A3 WO 2010080354 A3 WO2010080354 A3 WO 2010080354A3 US 2009067835 W US2009067835 W US 2009067835W WO 2010080354 A3 WO2010080354 A3 WO 2010080354A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic device
core
semiconductor core
cane
type
Prior art date
Application number
PCT/US2009/067835
Other languages
English (en)
Other versions
WO2010080354A2 (fr
Inventor
David J Mcenroe
Original Assignee
Bhagavatula, Venkata A
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bhagavatula, Venkata A, Corning Incorporated filed Critical Bhagavatula, Venkata A
Priority to CN2009801572842A priority Critical patent/CN102318075A/zh
Priority to JP2011542298A priority patent/JP2012513123A/ja
Priority to EP09768317A priority patent/EP2368277A2/fr
Publication of WO2010080354A2 publication Critical patent/WO2010080354A2/fr
Publication of WO2010080354A3 publication Critical patent/WO2010080354A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une tige ayant des propriétés optiques et comprenant un noyau constitué d'un matériau semi-conducteur; et une gaine transparente constituée de verre, de verre-céramique, ou d'un polymère coaxialement orienté autour du noyau. La tige peut être utilisée pour produire un dispositif photovoltaïque, comprenant : un noyau semi-conducteur comprenant au moins une jonction p-n, définie par des régions respectives de type n et de type p; une gaine sensiblement transparente en relation coaxiale avec le noyau à semi-conducteur, formant une tige orientée longitudinalement; et une première et une seconde électrode, chacune d'entre elles étant électriquement raccordée à une région respective de type n et de type p.
PCT/US2009/067835 2008-12-18 2009-12-14 Noyau semi-conducteur, dispositif photovoltaïque fibreux intégré WO2010080354A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801572842A CN102318075A (zh) 2008-12-18 2009-12-14 半导体芯, 整体化纤维状光生伏打装置
JP2011542298A JP2012513123A (ja) 2008-12-18 2009-12-14 半導体コア、一体化型の繊維状光起電装置
EP09768317A EP2368277A2 (fr) 2008-12-18 2009-12-14 Noyau semi-conducteur, dispositif photovoltaïque fibreux intégré

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/338,195 2008-12-18
US12/338,195 US20100159242A1 (en) 2008-12-18 2008-12-18 Semiconductor Core, Integrated Fibrous Photovoltaic Device

Publications (2)

Publication Number Publication Date
WO2010080354A2 WO2010080354A2 (fr) 2010-07-15
WO2010080354A3 true WO2010080354A3 (fr) 2011-06-16

Family

ID=42266568

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/067835 WO2010080354A2 (fr) 2008-12-18 2009-12-14 Noyau semi-conducteur, dispositif photovoltaïque fibreux intégré

Country Status (5)

Country Link
US (1) US20100159242A1 (fr)
EP (1) EP2368277A2 (fr)
JP (1) JP2012513123A (fr)
CN (1) CN102318075A (fr)
WO (1) WO2010080354A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8977097B2 (en) * 2010-02-17 2015-03-10 Raytheon Company Glass core planar waveguide laser amplifier
JP5511557B2 (ja) * 2010-07-08 2014-06-04 セイコーインスツル株式会社 ガラス基板の製造方法及び電子部品の製造方法
US8663522B2 (en) * 2011-02-17 2014-03-04 Massachusetts Institute Of Technology Fiber draw synthesis
US9069117B1 (en) * 2011-04-14 2015-06-30 Clemson University High purity crystalline core optical fibers and formation methods thereof
JP6904795B2 (ja) * 2017-06-09 2021-07-21 トヨタ自動車株式会社 太陽電池モジュール及びその製造方法
GB2588750A (en) 2019-10-16 2021-05-12 Norfib As Wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4913744A (en) * 1987-01-13 1990-04-03 Helmut Hoegl Solar cell arrangement
WO2003093884A2 (fr) * 2002-04-30 2003-11-13 Crystal Fibre A/S Procede et appareil concernant des fibres optiques
US20060162474A1 (en) * 2002-12-12 2006-07-27 Yasuhiko Kasama End face sensor and method of producing the same
WO2006080005A2 (fr) * 2005-01-25 2006-08-03 Bar Ilan University Dispositif electronique et procede permettant de fabriquer ce dispositif

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984256A (en) * 1975-04-25 1976-10-05 Nasa Photovoltaic cell array
US4194807A (en) * 1976-04-09 1980-03-25 Georg Gliemeroth Optical fiber wave-guides for signal transmission comprising multiple component glass with an adjusted expansion co-efficient between the core and mantle
US6229945B1 (en) * 1992-06-24 2001-05-08 British Telecommunications Public Limited Company Photo induced grating in B2O3 containing glass
JP2637891B2 (ja) * 1993-03-26 1997-08-06 日本電気株式会社 光導波路の製造方法
EP0641029A3 (fr) * 1993-08-27 1998-01-07 Twin Solar-Technik Entwicklungs-GmbH Elément d'une cellule solaire photovoltaique et procédé pour sa fabrication ainsi que son agencement dans une cellule solaire
US5437736A (en) * 1994-02-15 1995-08-01 Cole; Eric D. Semiconductor fiber solar cells and modules
JP2000021727A (ja) * 1998-07-01 2000-01-21 Asahi Optical Co Ltd 半導体回路形成装置
KR100322135B1 (ko) * 1999-03-11 2002-02-04 윤종용 잔류 기계적 스트레스를 최대화하는 광섬유 및 이를 이용한 광섬유 격자 제작방법
JP2003077550A (ja) * 2001-09-06 2003-03-14 Nec Corp 円筒型及び半円筒型太陽電池並びにその製造方法
AU2003231391A1 (en) * 2002-05-02 2003-11-17 Ideal Star Inc. Integrating device
ES2315367T3 (es) * 2002-06-21 2009-04-01 Kyosemi Corporation Dispositivo receptor de luz o emisor de luz y su metodo de produccion.
JP2007250742A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 光電変換素子の製造方法、光電変換装置の製造方法、光電変換素子及び光電変換装置
JP2007250858A (ja) * 2006-03-16 2007-09-27 Seiko Epson Corp 光電変換素子、光電変換装置及び光電変換モジュール
US20070215197A1 (en) * 2006-03-18 2007-09-20 Benyamin Buller Elongated photovoltaic cells in casings
WO2008013627A2 (fr) * 2006-06-30 2008-01-31 Corning Incorporated Fibre optique à faible perte par courbure à enrobage à module élevé
DE112009000467B4 (de) * 2008-02-29 2023-03-30 Clemson University Lichtleitersysteme und Verfahren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4913744A (en) * 1987-01-13 1990-04-03 Helmut Hoegl Solar cell arrangement
WO2003093884A2 (fr) * 2002-04-30 2003-11-13 Crystal Fibre A/S Procede et appareil concernant des fibres optiques
US20060162474A1 (en) * 2002-12-12 2006-07-27 Yasuhiko Kasama End face sensor and method of producing the same
WO2006080005A2 (fr) * 2005-01-25 2006-08-03 Bar Ilan University Dispositif electronique et procede permettant de fabriquer ce dispositif

Also Published As

Publication number Publication date
EP2368277A2 (fr) 2011-09-28
CN102318075A (zh) 2012-01-11
JP2012513123A (ja) 2012-06-07
US20100159242A1 (en) 2010-06-24
WO2010080354A2 (fr) 2010-07-15

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