WO2010071137A1 - Optical reading method - Google Patents
Optical reading method Download PDFInfo
- Publication number
- WO2010071137A1 WO2010071137A1 PCT/JP2009/070920 JP2009070920W WO2010071137A1 WO 2010071137 A1 WO2010071137 A1 WO 2010071137A1 JP 2009070920 W JP2009070920 W JP 2009070920W WO 2010071137 A1 WO2010071137 A1 WO 2010071137A1
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- WIPO (PCT)
- Prior art keywords
- core
- semiconductor quantum
- quantum dots
- information pattern
- light
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000002096 quantum dot Substances 0.000 claims abstract description 84
- 230000005284 excitation Effects 0.000 claims abstract description 24
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 230000007704 transition Effects 0.000 claims abstract description 6
- 239000002105 nanoparticle Substances 0.000 claims description 24
- 239000005543 nano-size silicon particle Substances 0.000 claims description 15
- 229910052691 Erbium Inorganic materials 0.000 claims description 13
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 13
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 7
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 7
- 239000007771 core particle Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910002699 Ag–S Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 17
- 238000000295 emission spectrum Methods 0.000 description 8
- 230000008602 contraction Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000000275 quality assurance Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/12—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation using a selected wavelength, e.g. to sense red marks and ignore blue marks
Definitions
- the present invention relates to an optical reading method for reading an information pattern such as a bar code or a QR code printed on an information recording medium or an object to be managed.
- a non-visible information pattern such as a barcode is printed with non-visible ink containing a phosphor, the semiconductor pattern is irradiated with a semiconductor laser to excite the phosphor, and the fluorescence emitted from the phosphor is received and non-printed.
- a security system for reading information from a visible information pattern with an optical reader has been implemented. In this case, the information pattern is invisible and not noticed except at the time of reading. At the time of reading, the phosphor of the information pattern shifts the wavelength of the emission spectrum to the longer wavelength side with respect to the wavelength of the emission spectrum of the semiconductor laser diode.
- the emission spectrum of the semiconductor laser diode has a narrow wavelength width
- the wavelength peaks of the emission spectrum of the semiconductor laser diode and the emission spectrum of the phosphor are separated, and only the emission spectrum of the phosphor can be read.
- a special optical filter is used in front of the light receiving element, it is possible to receive only the fluorescence with the light receiving element and read the information of the phosphor mark while irradiating the phosphor mark (information pattern) with a laser.
- the phosphor mark is difficult to be counterfeited and the technology for reading the phosphor mark is difficult to counterfeit, so that security can be provided.
- the above-described security system uses a semiconductor laser diode as the light source, the light source driving circuit of the optical reader is complicated and large, and has a disadvantage of high cost.
- the light is emitted unlike the laser. Since the spectrum of the excitation light emitted from the diode is wide, it partially overlaps the emission spectrum of the phosphor. For this reason, it is difficult to separate both lights by the optical filter, and there is a possibility that an erroneous determination occurs in the optical reader.
- Patent Document 1 An optical reading system that can be reduced in size and is inexpensive has been proposed.
- This optical reading system optically reads a printed layer printed with invisible ink, and the phosphor is made of an inorganic oxide to which neodymium is added as an activation element. This eliminates the overlap between the emission center wavelength of the light emitting element that excites the phosphor and the wavelength region where the light receiving element that receives fluorescence from the print layer can receive light, thereby eliminating the possibility of erroneous determination.
- Patent Document 2 in an optical data carrier containing metal particles, an increase in the volume of the data carrier resulting from thermal expansion as a result of absorption of radiation causes a shift of the absorbed light to a longer wavelength. It is disclosed.
- the present inventor can adopt light from a light emitting diode as excitation light as in Patent Document 1, can be miniaturized, and can be an inexpensive optical reading system, and is a method different from Patent Document 1.
- the inventors have eagerly searched for a printing layer and an optical reading method that can receive light emitted from a printing layer (information pattern) excited by excitation light and can avoid receiving excitation light.
- Patent Document 2 Furthermore, the present inventor pays attention to the shift of the wavelength to the longer wavelength side due to thermal expansion in Patent Document 2, and uses it for avoiding the reception of excitation light at the time of reading. Stacked.
- the present invention has been devised in view of the above circumstances.
- the purpose of the present invention is to print an invisible information pattern such as a barcode or QR code on an information recording medium or an object to be managed, and visually check the information pattern. It is extremely difficult to maliciously develop an optical reader that can compensate for unrecognized handling and can read information pattern information even if it is noticed, and can realize a high security system or provide high quality assurance.
- An object of the present invention is to provide an optical reading method capable of realizing visible traceability.
- the optical reading method of the present invention prints an invisible information pattern with an invisible ink containing core / shell type semiconductor quantum dots on an information recording medium or an object to be managed.
- the semiconductor quantum dot is irradiated with an excitation beam having energy higher than the band gap of the semiconductor quantum dot, and the semiconductor quantum dot is thermally expanded or contracted, and the semiconductor quantum dot that has been thermally expanded or contracted is shifted to a longer wavelength side.
- an invisible information pattern is printed on an information recording medium (or an object to be managed), and when read, the core / shell type semiconductor quantum dots are excited by thermal expansion or contraction, and light is emitted at that time.
- the light having a wavelength that shifts to the long wavelength side or the short wavelength side is received and information is decoded. For this reason, the presence of an invisible information pattern is not noticed except during reading.
- the core / shell type semiconductor quantum dot emits strong light, the wavelength of the light emission changes due to thermal expansion or contraction, and the information is decoded by using an optical reader capable of decoding the wavelength. .
- the core / shell type semiconductor quantum dot is (1) CdSe / ZnS, or (2) a core obtained by adding Te to ZnSe nanoparticles, and a shell having ZnS nanoparticles (3 ) Whether ZnS nanoparticles containing Mn ions are used as the core, (4) ZnS nanoparticles are used as the core, or (5) Zn-In-Ag-S based semiconductor nanoparticles are used as the core. Or (6) those having silicon nanoparticles as the core.
- an invisible information pattern can be printed on an information recording medium or an object to be managed, and when reading, the emission wavelength region can be changed and strong light emission can be realized.
- the information reading of the information pattern can be reliably decoded by an optical reading device that can compensate for handling that cannot be recognized by the naked eye and can decode the shifted wavelength.
- FIG. 1 is a conceptual diagram for explaining the optical reading method of the first embodiment.
- FIG. 2 is a graph showing the relationship between the wavelength and intensity of light emitted by exciting semiconductor quantum dots at room temperature.
- FIG. 3 is a graph showing the relationship between the wavelength and intensity of light emitted by exciting a semiconductor quantum dot by thermal expansion.
- FIG. 4 is a graph showing the relationship between the wavelength and intensity of light emitted by exciting a semiconductor quantum dot by thermal contraction, according to the optical reading method of the second embodiment.
- FIG. 1 is a conceptual diagram for explaining the optical reading method of this embodiment.
- an information recording card 10 includes an information recording medium (or may be a management target) 11 and an information pattern 12 such as an invisible bar code or QR code printed on the information recording medium 11. .
- the information recording medium 11 is, for example, a card body, and is composed of a vinyl chloride sheet or the like in which a white pigment such as titanium oxide is dispersed and held, and has a property of reflecting infrared rays, visible rays, and ultraviolet rays.
- a cash card various prepaid cards, a telephone card, a traffic card, a health insurance card, or the like is applied.
- the information pattern 12 is a non-visible information pattern printed with an invisible ink containing core / shell type semiconductor quantum dots on an information recording medium or a management object.
- invisible means that it is almost impossible to see with eyes, and includes invisible things that cannot be seen with eyes.
- the invisible ink and the information pattern 12 are substantially transparent, difficult to reflect visible light, and the ground color of the part forming the information pattern 12, for example, substantially the same color as the information recording medium 11 and so on.
- the core / shell type refers to a type in which a core made of an inner material is covered with a shell made of an outer material, and a quantum dot is a nanometer-sized fine particle such as a semiconductor.
- a CdSe / ZnSe core / shell type semiconductor quantum dot is used.
- a core / shell type semiconductor quantum dot of CdSe / ZnS is used, it can be dispersed well with toluene or the like and aggregation does not occur, it can be used as an invisible ink, and an information pattern can be printed well.
- the information pattern 12 is printed as a non-visible information pattern 12 with a non-visible ink containing a transparent binder that scatters and holds the semiconductor quantum dots, and is hidden by a masking film (not shown). Is done.
- the optical reading method of this embodiment includes a light emitting diode 13 that is an inexpensive electronic component that emits excitation light H1, an optical sensor 14 that is an inexpensive electronic component that receives light H2 emitted by excitation, and an information determination unit 15. And an optical reader (no symbol).
- the light emitting diode 13 is provided so as to irradiate the security information with the excitation light H1, and the optical sensor 14 receives the light beam H2 that is emitted when the core / shell type semiconductor quantum dots included in the information pattern 12 are excited. Is provided.
- the information recording card 10 having the information pattern 12 is relative to the light emitting diode 13 and the optical sensor 14 while the positional relationship between the light emitting diode 13 and the optical sensor 14 is fixed.
- the scanning movement needs to be performed linearly, and this scanning movement may be either by a mechanical mechanism provided in the optical reader or by manual operation.
- the light emitting diode 13 emits excitation light H1 having energy higher than the band gap of the core / shell type semiconductor quantum dots included in the information pattern 12.
- the excitation light H1 excites the core / shell type semiconductor quantum dots included in the information pattern 12 by irradiation, and heats the information pattern 12 to cause thermal expansion of the semiconductor quantum dots. For this reason, it is configured such that the excitation light H1 of the light emitting diode 13 is condensed through a condensing lens as necessary and irradiated to the information pattern 12.
- a high output one is selected, or a plurality of light emitting diodes are used for irradiation, or a light emitting diode that emits infrared light and a light emitting diode that emits ultraviolet light are used in combination.
- the optical sensor 14 for example, a photodiode can be used.
- This optical sensor 14 needs to be sensitive to the wavelength of the long wavelength side portion of the light emitted by shifting to the long wavelength side in a state where the information pattern 12 including the core / shell type semiconductor quantum dots is thermally expanded.
- the CdSe / ZnSe core / shell type semiconductor quantum dots when excited without being thermally expanded, they emit a plurality of visible rays having different wavelengths for different particle sizes. Emits light.
- FIG. 3 when excited in a thermally expanded state, a plurality of visible rays having different wavelengths are emitted every time the particle diameter greatly shifted to the long wavelength side is different.
- the optical sensor 14 having sensitivity in the wavelength region indicated by the range Y deviating from the wavelength region shown in FIG. 2 to the longer wavelength side is used.
- the same relationship is assumed when the core particles of the core / shell type semiconductor quantum dots have a single particle diameter.
- the temperature before the information pattern 12 is heated and the temperature after the heating can be measured by a radiation temperature sensor directed to the information pattern 12, and the temperature before the information pattern 12 is heated (for example, 15 ° C. to 30 ° C.).
- the time until the temperature after heating for example, 60 ° C. to 85 ° C.
- the optical sensor 14 is the length of light emitted by the optical sensor 14 when the time required for the temperature rise has elapsed. It is assumed that the wavelength of the wavelength side portion can be received.
- the information determination unit 15 is configured to amplify the electrical signal (rectangular signal) received by the optical sensor 14 and optically read the code information of the information pattern 12.
- the light-emitting diode 13 when the information recording medium 11 having the information pattern 12 is placed or sent in a predetermined position, the light-emitting diode 13 emits light, and the band gap of the semiconductor quantum dots with respect to the information pattern 12 Excitation light H1 having higher energy than that is irradiated.
- the excitation light H1 excites the semiconductor quantum dots and heats the information pattern 12 to thermally expand the semiconductor quantum dots.
- the thermally expanded semiconductor quantum dots emit light having a wavelength that shifts to the longer wavelength side shown in FIG. 3 as compared to the wavelength emitted from the semiconductor quantum dots when not thermally expanded (FIG. 2).
- CdSe / ZnSe core / shell type semiconductor quantum dots have particularly strong light emission. This light emission is received by the optical sensor 14 having sensitivity to the long wavelength side portion Y.
- the information determination unit 15 patterns the received signal to read the information pattern 12, and further determines whether the information pattern 12 matches the data recorded in the database. Judge authenticity.
- the information pattern 12 can be excited by light emission of a normal inexpensive light emitting diode 13 and strong light emission can be realized from the semiconductor quantum dots (quantum size effect). It can be detected with high sensitivity by a light receiving element such as an inexpensive silicon photodiode.
- a non-visible information pattern such as a barcode or QR code is printed on an information recording medium or management target to compensate for handling that the information pattern is not recognized by the naked eye. Even if the organization notices the presence of an information pattern due to the minute rise of the printed film on the surface of the information recording medium, it is difficult to imitate the ink, and the light source of the information pattern is a core / shell type semiconductor quantum dot. Even if an optical reader is developed that can analyze information by receiving light emitted by normal excitation of the semiconductor quantum dots based on that analysis, the information pattern can be decoded depending on the optical reader. Absent.
- the optical reader is configured to decode information using an optical sensor that is sensitive to light emission that has shifted to the long wavelength region, it is difficult to imitate the optical reader and an optical reading method with high security can be realized.
- the sensor receives the emitted light and decodes the information, the information can be decoded for the first time by using a special optical reader, and a system that can provide higher security or quality assurance can be realized.
- a heating means for thermally expanding the semiconductor quantum dots may be provided.
- an electric heater for applying high heat to the information recording card and thermally expanding the semiconductor quantum dots of the information pattern 12 is provided as a heating means on the lower side of the information recording card 10 and on the back side on which the information pattern 12 is printed. Also good.
- a means for irradiating the information pattern 12 with heat rays may be provided as a heating means.
- the semiconductor quantum dots are thermally contracted, and the semiconductor quantum dots subjected to the thermal contraction are allowed to emit light having a wavelength that transitions to the short wavelength side, and the short wavelength side portion in the transitioned wavelengths
- the light emission is received by an optical sensor having sensitivity and the information pattern is read.
- symbol is attached
- a cooling means (not shown) that thermally cools the semiconductor quantum dots by applying cold heat to the semiconductor quantum dots.
- the cooling means blows air of 0 ° C. to ⁇ 10 ° C. on the information pattern 12 to cool the information pattern 12 to around 0 ° C., and heat shrinks the semiconductor quantum dots of the information pattern 12.
- means for spraying cooler air or cooler gas may be provided as long as the information pattern 12 and the information recording card 11 are not damaged.
- the optical sensor one having sensitivity in the wavelength region indicated by Ya shown in FIG. 4, which is a range deviating from the wavelength region shown in FIG. 2 to the short wavelength side, is used.
- the cooling means cools the information pattern 12 and heat shrinks the semiconductor quantum dots.
- the light emitting diode 13 emits light
- the information pattern 12 is irradiated with excitation light H1 having energy higher than the band gap of the semiconductor quantum dots.
- the heat-shrinkable semiconductor quantum dots emit light having a wavelength that shifts to the short wavelength side shown in FIG. 4 compared to the wavelength emitted from the semiconductor quantum dots when the heat-shrinkable semiconductor quantum dots do not shrink (FIG. 2).
- This light emission is received by an optical sensor having sensitivity to the long wavelength side portion Ya.
- the information determination unit 15 patterns the received signal to read the information pattern 12, and further determines whether the information pattern 12 matches the data recorded in the database. Judge authenticity.
- the core / shell type semiconductor quantum dot that is the light emission source of the information pattern 12 is excited so as to be accompanied by thermal contraction, and at that time, the short wavelength in the light emitted by transitioning to the short wavelength side is emitted. Since the optical sensor with sensitivity on the wavelength side receives the emitted light and decodes the information, the information can be decoded for the first time by using a special optical reader, and the security or quality assurance is much higher. Can be realized.
- the present invention is not limited to the above-described embodiment, but includes variously modified forms within the technical scope without departing from the gist of the invention described in the claims.
- the CdSe / ZnSe core / shell type semiconductor quantum dots are used.
- security information may be printed by the following invisible ink using the core / shell type semiconductor quantum dots. .
- a core / shell type semiconductor quantum dot having a core obtained by adding Te to ZnSe nanoparticles and using a ZnS nanoparticle as a shell may be used.
- the core / shell type semiconductor quantum dots may be core / shell type semiconductor quantum dots having ZnS nanoparticles containing Mn ions as a core.
- a core which is a ZnS nanoparticle (Zn (1-2x) In x Ag x S) doped with In 3+ and Ag + by thermally decomposing a thiol complex containing Zn 2+ , In 3+ and Ag + / Shell type semiconductor quantum dots may be used.
- a core / shell type semiconductor quantum dot whose core is a ZnS nanoparticle containing Mn ions may be used.
- a core / shell type semiconductor quantum dot having Zn—In—Ag—S based semiconductor nanoparticles as a core may also be used.
- erbium The coefficient of thermal expansion of erbium is 7.6 ⁇ 10 ⁇ 6 / ° C. at 20 ° C., which is 2.5 ⁇ 10 ⁇ 6 / ° C. at 20 ° C. It is about 3 times. For this reason, it is most preferable to use erbium in order to realize a wavelength shift due to expansion.
- a core / shell type semiconductor quantum dot in combination with silicon nanoparticles is preferable. This includes two types: silicon nanoparticles as the core and erbium nanoparticles as the shell, and erbium as the core and silicon nanoparticles as the shell.
- the silicon nanoparticles are preferably 1.9 nm to 4.3 nm, and the erbium nanoparticles are preferably 1.9 nm to 4.3 nm.
- the semiconductor quantum dots are dispersed in water and the water temperature is increased in the range of 22 ° C. to 90 ° C., and then excitation light having a wavelength of 325 nm is used. It has been confirmed that light emission with a wavelength of 720 to 740 nm can be obtained from semiconductor quantum dots.
- the erbium nanoparticles When erbium nanoparticles are used as the core and silicon nanoparticles are used as the shell, the erbium nanoparticles should be 1.9 nm to 4.3 nm, and the silicon nanoparticles should be 1.9 nm to 4.3 nm. preferable.
- the semiconductor quantum dots are dispersed in water and the water temperature is increased in the range of 22 ° C. to 90 ° C., and then excitation at a wavelength of 325 nm is performed. It has been confirmed that strong light emission with a wavelength of 720 to 740 nm can be obtained from semiconductor quantum dots when irradiated with light.
- silicon nanoparticles having oxygen doped on the surface, or silicon oxide nanoparticles whose inside is oxidized are used as a core or shell, and a core / shell type semiconductor quantum dot using erbium as a shell or core, It is preferable because it emits stronger light.
- the core / shell type semiconductor quantum dot having silicon nanoparticles as the core a plurality of hydrocarbon groups are bonded to respective Si atoms in the silicon nanoparticles, and the surface of the Si atoms is covered with the hydrocarbon groups.
- This semiconductor quantum dot is prevented from lowering the emission wavelength and emission efficiency, and can emit visible light by ultraviolet excitation. Further preferably it is possible to adjust the particle size by the reaction conditions of the Mg 2 Si and SiCl 4 (silicon tetrachloride).
- the present invention can be used not only for authenticating various cards but also for reading invisible information of traceability for tracking product items.
- the present invention does not exclude using a semiconductor laser diode as a light source of excitation light.
- a visible information pattern such as a barcode or QR code is printed with normal visible ink on top of the invisible information pattern or arranged in the vicinity of one side, and the optical reading device optically converts the invisible information pattern.
- the present invention includes not only reading but also optical reading of a visible information pattern.
- the present invention can prevent counterfeiting, alteration, and falsification of cards and certificates, and can reduce the size and space of the system, or can realize invisible traceability, and can be used in fields that require information retention. It can contribute widely.
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Abstract
Description
11 情報記録媒体
12 情報パターン
13 発光ダイオード
14 光センサ
15 情報判定部 DESCRIPTION OF
はじめに、光学読取方法を実施するための構成を説明する。図1は、この実施形態の光学読取方法を説明するための概念図である。図1において、情報記録カード10は、情報記録媒体(あるいは管理対象物でもよい)11と、該情報記録媒体11に印刷された非可視のバーコード、あるいはQRコード等の情報パターン12とからなる。 [First Embodiment]
First, a configuration for carrying out the optical reading method will be described. FIG. 1 is a conceptual diagram for explaining the optical reading method of this embodiment. In FIG. 1, an
具体的には、図2に示すように、CdSe/ZnSeのコア/シェル型の半導体量子ドットは、熱膨張しない状態で励起されると、粒径が異なる毎に波長が異なる複数の可視光線を発光する。それに対して、図3に示すように、熱膨張した状態で励起されると、長波長側に大きく遷移した粒径が異なる毎に波長が異なる複数の可視光線を発光する。したがって、図3において、図2に示す波長領域から長波長側に外れた範囲Yで示す波長領域に感度を有する光センサ14を用いるものとする。なお、コア/シェル型の半導体量子ドットのコア粒子が単一の粒子径からなる場合にも、同じ関係になるものとする。
ここでは、情報パターン12が加熱される前の温度及び加熱された後の温度が情報パターン12に向けた放射温度センサで測定でき、かつ加熱される前の温度(例えば15℃~30℃)から加熱された後の温度(例えば60℃~85℃)までの時間を計測できるようになっていて、光センサ14は、温度上昇にかかる時間を経過の時点で光センサ14が発光する光の長波長側部分の波長を受光し得るものとする。 As the
Specifically, as shown in FIG. 2, when the CdSe / ZnSe core / shell type semiconductor quantum dots are excited without being thermally expanded, they emit a plurality of visible rays having different wavelengths for different particle sizes. Emits light. On the other hand, as shown in FIG. 3, when excited in a thermally expanded state, a plurality of visible rays having different wavelengths are emitted every time the particle diameter greatly shifted to the long wavelength side is different. Therefore, in FIG. 3, the
Here, the temperature before the
この実施形態は、半導体量子ドットを熱収縮させ、かつ該熱収縮した該半導体量子ドットから、短波長側に遷移する波長を有する発光を行わせ、該遷移した波長の中の短波長側部分に感度を有する光センサで前記発光を受光し前記情報パターンを読み取る構成である。なお、第1の実施形態と重複する部分については同符号を付して説明を省略する。 [Second Embodiment]
In this embodiment, the semiconductor quantum dots are thermally contracted, and the semiconductor quantum dots subjected to the thermal contraction are allowed to emit light having a wavelength that transitions to the short wavelength side, and the short wavelength side portion in the transitioned wavelengths In this configuration, the light emission is received by an optical sensor having sensitivity and the information pattern is read. In addition, about the part which overlaps with 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted.
本発明は、上記の実施形態に限定されるものでなく、特許請求の範囲に記載された発明の要旨を逸脱しない範囲内での種々、設計変更した形態を技術的範囲に含むものである。上記の実施形態では、CdSe/ZnSeのコア/シェル型の半導体量子ドットを用いたが、以下のようなコア/シェル型の半導体量子ドットを用いた非可視インクによりセキュリティ情報が印刷されても良い。 [Other Embodiments]
The present invention is not limited to the above-described embodiment, but includes variously modified forms within the technical scope without departing from the gist of the invention described in the claims. In the above embodiment, the CdSe / ZnSe core / shell type semiconductor quantum dots are used. However, security information may be printed by the following invisible ink using the core / shell type semiconductor quantum dots. .
(2)コア/シェル型の半導体量子ドットが、Mnイオンを含んだZnSナノ粒子をコアとする、コア/シェル型の半導体量子ドットを用いても良い。
(3)Zn2+,In3+,Ag+を含むチオール錯体を熱分解することにより、In3+,Ag+がドープされたZnSナノ粒子(Zn(1-2x)InxAgxS)であるコア/シェル型の半導体量子ドットを用いても良い。
(4)コアがMnイオンを含んだZnSナノ粒子であるコア/シェル型の半導体量子ドットを用いても良い。
(5)また、Zn-In-Ag-S系半導体ナノ粒子をコアとするコア/シェル型の半導体量子ドットを用いても良い。 (1) A core / shell type semiconductor quantum dot having a core obtained by adding Te to ZnSe nanoparticles and using a ZnS nanoparticle as a shell may be used.
(2) The core / shell type semiconductor quantum dots may be core / shell type semiconductor quantum dots having ZnS nanoparticles containing Mn ions as a core.
(3) A core which is a ZnS nanoparticle (Zn (1-2x) In x Ag x S) doped with In 3+ and Ag + by thermally decomposing a thiol complex containing Zn 2+ , In 3+ and Ag + / Shell type semiconductor quantum dots may be used.
(4) A core / shell type semiconductor quantum dot whose core is a ZnS nanoparticle containing Mn ions may be used.
(5) A core / shell type semiconductor quantum dot having Zn—In—Ag—S based semiconductor nanoparticles as a core may also be used.
これには、シリコンナノ粒子をコアとしエルビウムナノ粒子をシェルとするものと、エルビウムをコアとしシリコンナノ粒子をシェルとするものの2通りが含まれる。 (6) The coefficient of thermal expansion of erbium is 7.6 × 10 −6 / ° C. at 20 ° C., which is 2.5 × 10 −6 / ° C. at 20 ° C. It is about 3 times. For this reason, it is most preferable to use erbium in order to realize a wavelength shift due to expansion. In this case, a core / shell type semiconductor quantum dot in combination with silicon nanoparticles is preferable.
This includes two types: silicon nanoparticles as the core and erbium nanoparticles as the shell, and erbium as the core and silicon nanoparticles as the shell.
Claims (10)
- 情報記録媒体あるいは管理対象物にコア/シェル型の半導体量子ドットを含有する非可視インクにより非可視の情報パターンが印刷され、該情報パターンに前記半導体量子ドットのバンドギャップよりもエネルギーが高い励起光線を照射すると共に前記半導体量子ドットを熱膨張又は熱収縮させ、かつ該熱膨張又は熱収縮した該半導体量子ドットから、長波長側に遷移する波長又は短波長側に遷移する波長を有する発光を行わせ、該遷移した波長の中の長波長側部分又は短波長側部分に感度を有する光センサで前記発光を受光し前記情報パターンを読み取ること、を特徴とする光学読取方法。 An invisible information pattern is printed on an information recording medium or an object to be managed by an invisible ink containing core / shell type semiconductor quantum dots, and excitation light having energy higher than the band gap of the semiconductor quantum dots is printed on the information pattern. The semiconductor quantum dots are thermally expanded or contracted, and the semiconductor quantum dots that have been thermally expanded or contracted emit light having a wavelength that transitions to the long wavelength side or a wavelength that transitions to the short wavelength side. An optical sensor having sensitivity to a long wavelength side portion or a short wavelength side portion of the shifted wavelength, and reading the information pattern by reading the information pattern.
- 前記半導体量子ドットに熱線もしくは高熱又は冷熱を与えることにより前記半導体量子ドットを熱膨張又は熱収縮させることを特徴とする請求の範囲1に記載の光学読取方法。 2. The optical reading method according to claim 1, wherein the semiconductor quantum dots are thermally expanded or contracted by applying heat rays, high heat or cold to the semiconductor quantum dots.
- 前記コア/シェル型の半導体量子ドットが、CdSe/ZnSであることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots are CdSe / ZnS.
- 前記コア/シェル型の半導体量子ドットが、ZnSeナノ粒子にTeを加えたものをコアとし、ZnSナノ粒子をシェルとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots are obtained by adding Te to ZnSe nanoparticles as a core, and using ZnS nanoparticles as a shell.
- 前記コア/シェル型の半導体量子ドットが、Mnイオンを含んだZnSナノ粒子をコアとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots have ZnS nanoparticles containing Mn ions as a core.
- 前記コア/シェル型の半導体量子ドットが、ZnSナノ粒子をコアとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots have ZnS nanoparticles as a core.
- 前記コア/シェル型の半導体量子ドットが、Zn-In-Ag-S系半導体ナノ粒子をコアとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots have Zn—In—Ag—S based semiconductor nanoparticles as a core.
- 前記コア/シェル型の半導体量子ドットが、シリコンナノ粒子をコアとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1 or 2, wherein the core / shell type semiconductor quantum dots have silicon nanoparticles as a core.
- 前記コア/シェル型の半導体量子ドットが、エルビウムをシェルとすることを特徴とする請求の範囲8に記載の光学読取方法。 The optical reading method according to claim 8, wherein the core / shell type semiconductor quantum dots have erbium as a shell.
- 前記コア/シェル型の半導体量子ドットが、エルビウムをコアとし、シリコンナノ粒子をシェルとすることを特徴とする請求の範囲1又は2に記載の光学読取方法。 3. The optical reading method according to claim 1, wherein the core / shell type semiconductor quantum dots have erbium as a core and silicon nanoparticles as a shell.
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CN103073946A (en) * | 2013-01-14 | 2013-05-01 | 山西大学 | Waterborne fluorescent falsification-resistant ink and preparation method thereof |
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JP2014185224A (en) * | 2013-03-22 | 2014-10-02 | Nagoya Univ | Semiconductor nanoparticle and fluorescent probe for labeling biological samples |
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US10303912B2 (en) | 2012-09-27 | 2019-05-28 | Denso Wave Incorporated | Information code medium, and system and apparatus for reading information code provided by the same |
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