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WO2010043991A1 - Dispositif électrochimique en 3d - Google Patents

Dispositif électrochimique en 3d Download PDF

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Publication number
WO2010043991A1
WO2010043991A1 PCT/IB2009/054253 IB2009054253W WO2010043991A1 WO 2010043991 A1 WO2010043991 A1 WO 2010043991A1 IB 2009054253 W IB2009054253 W IB 2009054253W WO 2010043991 A1 WO2010043991 A1 WO 2010043991A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrochemical device
etch
solid
lithium
electrolyte
Prior art date
Application number
PCT/IB2009/054253
Other languages
English (en)
Inventor
Nynke Verhaegh
Johan Hendrik Klootwijk
Willem Frederik Adrianus Besling
Rogier Adrianus Henrica Niessen
Yann Pierre Roger Lamy
Freddy Roozeboom
Petrus Henricus Laurentius Notten
Original Assignee
Nxp B.V.
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp B.V., Koninklijke Philips Electronics N.V. filed Critical Nxp B.V.
Publication of WO2010043991A1 publication Critical patent/WO2010043991A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0436—Small-sized flat cells or batteries for portable equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/40—Printed batteries, e.g. thin film batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a modified electrochemical device such as a rechargeable Li-ion solid-state battery design, that is preferably integrated in 3D silicon.
  • Lithium all- so lid- state batteries are based upon the reversible exchange of lithium ions, between two electrodes (anode and cathode). These electrodes are separated by a solid-state electrolyte, that allows for lithium ion diffusion-migration and that prevents electron transport.
  • FIG. 2 A SEM cross section of an example of a planar battery stack is given in Fig. 2.
  • the energy and power density of a solid-state-battery is e.g. determined by the amount of lithium ions that can migrate between the anode and cathode.
  • the storage capacity can e.g. be increased by:
  • a typical all-solid-state battery stack is in the order of 2 ⁇ m (0.1 ⁇ m barrier layer; 0.1 ⁇ m anode; 0.5 ⁇ m solid state electrolyte, 1.0 ⁇ m cathode, 0.1 ⁇ m current collector).
  • the present inventors that for electrochemical devices, such as batteries, the requirements for 3D structures are more stringent because of this volume expansion and contraction of the active layers during operation. In a planar device this volume expansion/contraction occurs only in one dimension.
  • WO2008/011061 Al discloses a method for producing a thin film lithium battery, comprising applying a cathode current collector, a cathode material, an anode current collector, and an electrolyte layer separating the cathode material from the anode current collector to a substrate, wherein at least one of the layers contains lithiated compounds that is patterned at least in part by a photolithography operation comprising removal of a photoresist material from the layer containing lithiated compounds by a process including a wet chemical treatment.
  • a method and apparatus for making lithium batteries by providing a first sheet that includes a substrate having a cathode material, an anode material, and a LiPON barrier/electrolyte layer separating the cathode material from the anode material; and removing a subset of first material to separate a plurality of cells from the first sheet.
  • the method further includes depositing second material on the sheet to cover the plurality of cells; and removing a subset of second material to separate a plurality of cells from the first sheet.
  • WO2004/093223 Al discloses a solid-state battery including at least one thin film layer, and method for making same.
  • etch techniques proposed in this application are e.g. wet etch techniques. They offer the advantages and disadvantages of standard wet etch techniques.
  • WO2005/041324 Al discloses aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the thin film battery.
  • a deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations.
  • WO03/022461 Al patterned thin film electrochemical devices such as batteries on fibrous or ribbon-like substrates, as well as the design and manufacture of the same, for utilization in electrochemical cells, electronic devices, optical devices, synthetic multi-functional materials, and superconducting materials, as well as fiber reinforced composite material applications.
  • US2002/117469 Al discloses a method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an antirust-treated layer is formed, including the steps of: removing at least part of the surface-treated layer by etching the surface of the current collector with an ion beam or plasma in order to improve the diffusion of the current collector material into the active material thin film; and depositing the thin film on the surface of the current collector subjected to the etching step.
  • US2003/138554 Al discloses a method for manufacturing an electrode for a lithium secondary battery includes a step of forming an oxide film other than a natural oxide film on a current collector by oxidizing the surface of the current collector, and a step of forming an active material layer on the oxide film by a method to provide a material for the active material layer by emitting in the vapor phase, such as PVD (physical vapor deposition) including sputtering, vapor evaporation, and the like, and CVD (chemical vapor deposition) including plasma CVD.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the sputter etch technique disclosed in the above application is directed to cleaning a surface.
  • the above solid-state batteries contain active layers (anode and cathode) that exchange (for example) lithium ions during operation (charge/discharge). These active layers undergo volume expansion/contraction due to this lithium ion exchange. The inventors note that this induces stress in the battery stack.
  • the above disclosures relate amongst others to deposition of layers by
  • PVD and LPCVD forming batteries in 3D structures being etched, and realization of batteries on slopes for step coverage.
  • the present invention is aimed at providing such improved structures, without jeopardizing other relevant characteristics.
  • the present invention relates to a method of manufacturing an electrochemical device, comprising the steps of providing a substrate with a 3D element, smoothening the edges of the element, and providing a solid state electrolyte, said electrochemical device, and devices comprising said electrochemical device.
  • the present invention thereby provides improved electrochemical devices, such as batteries, having an improved reliability, e.g. in terms of lifetime, power delivery, breakdown of battery structure, etc.
  • the present invention provides 3D structures, such as trenches. It has been found that in that case the volume expansion/contraction is almost limited to one dimension as well.
  • Fig. 1 shows a sketch of trenches in which the battery layers are stacked.
  • the invention in a first aspect relates to a method of manufacturing an electrochemical device, comprising the steps of: - providing a substrate with a 3D element, smoothening the edges of the 3D element, and providing a solid-state electrolyte.
  • the solid-state electrolyte is preferably deposited by PVD.
  • the present invention preferably relates to silicon, silicon germanium and comparable substrates.
  • the 3D structures should be as smooth as possible in order to prevent mechanical breakdown at sharp edges during operation. That is because it has been found that active layers undergo volume expansion and contraction during operation. The sharp edges of 3D structures should therefore be smoothened.
  • corners if present are smoothened and/or tapered, such that e.g. sharp corners (corners at edges have and angle of less then 90°) are rounded into a more or less smooth surface with a curvature having an approximate radius of 1 - 10 ⁇ m with edges of 10-100 ⁇ m, or e.g. a tapering of 1 - 10 ⁇ m with edges of 10-100 ⁇ m with two edges being at a specific angle, e.g. about 90°, or a tapering of a trench or pore of about 5-25 °, such as 10-15 °, or rounding by e.g. a bird's beak with a curvature having a radius of 1 - 10 ⁇ m.
  • Capping according to the invention provides similar results.
  • the present invention provides a better step coverage in optional subsequent deposition steps. This is specifically relevant for PVD of layers. A better step coverage leads to an improved reliability in terms of more rigid structures, battery performance and lifetime.
  • the smoothening of the edges may be performed directly after forming/providing a substrate, or after depositing one or more layers on said substrate, however, before depositing a solid-state electrolyte.
  • the substrate may form an active part of the electrochemical device, or it may be a passive part thereof, such as a charge carrier. Furthermore, the substrate may comprise one or more further layers, such as a barrier layer, such as silicon nitride or silicon oxide, a conducting layer, such as a Pt layer or Cu layer, and one or more current collector layers, or layers functioning as such.
  • a barrier layer such as silicon nitride or silicon oxide
  • a conducting layer such as a Pt layer or Cu layer
  • current collector layers or layers functioning as such.
  • the smoothening step is performed by a wet etch, preferably an aqueous etch, such as a KOH etch, or by an isotropic dry etch, such as by SF 6 , or by capping of the 3D structure, such as by fluidic based layers, or by etching the 3D structure with LOCOS bird's beak, or by ion beam etch, such as by argon, or combinations thereof.
  • a wet etch preferably an aqueous etch, such as a KOH etch, or by an isotropic dry etch, such as by SF 6 , or by capping of the 3D structure, such as by fluidic based layers, or by etching the 3D structure with LOCOS bird's beak, or by ion beam etch, such as by argon, or combinations thereof.
  • the present invention relates to an electrochemical device, comprising an anode, a cathode, an electrolyte, wherein the substrate is a 3D structure with rounded edges.
  • the substrate may be a standard substrate, such as silicon, whereon an anode (layer) is deposited, or the substrate itself may function as anode.
  • the substrate is also the anode.
  • Useful substrates include flexible and rigid polymeric substrates, glass, silica, alumina, ceramic, metal foils, fibers, fabric, paper, woven or non-woven materials, silicon or other semiconductors, and batteries.
  • Semiconductor substrates include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures known in the art.
  • the substrate may also comprise a separately provided thin film battery, to produce a stacked, multi-cell thin film battery.
  • the substrate may also comprise a circuit or circuit element, such as a thin film transistor to produce an electronic device with an integral power source.
  • At least one current collector is present.
  • Useful materials for the cathode and anode current collectors include main group metals (including noble metals), metal alloys, metalloids, and carbon black.
  • Preferred current collector materials include Cu, Ag, Pd, Pt and Au.
  • Useful materials for the anode deposited layers include lithium metal (for lithium thin film batteries) or a lithium intercalation material (for lithium ion batteries), gold, tin, tin/lead alloys or the "lithium-free" materials, whereby lithium metal is electroplated from the electrolyte in situ at the metal anode current collector upon the initial charge cycle of the battery.
  • SiTON a silicon-tin oxynitride, such as SiSno.gONi.9, which may be deposited by RF magnetron sputtering of SnOz-SiO 2 in N 2 , SnN x (0 ⁇ x ⁇ 1.33), which may be deposited by reactive sputtering of Sn in an Ar + N 2 mixture, Sn 3 N 4 , Zn 3 N 2 , and InN x (0 ⁇ x ⁇ 1), which may be deposited by reactive sputtering of In in an Ar + N 2 mixture.
  • Useful materials for the cathode deposited layers include crystalline TiS 2 , Li containing materials such as LiMn 2 O 2 , LiC ⁇ o. 2 Nio.s0 2 , LiV 3 Os, LiV 2 Os, LiV 3 Oi 3 , LiMnO 2 , crystalline LiMnO 4 , crystalline LiCoO 2 , crystalline and amorphous V 2 O 5 , and nanocrystalline Li x Mn 2 _ y ⁇ 4.
  • Preferred cathode materials include lithium transition metal oxides.
  • Useful electrolyte materials include lithium phosphorus oxynitride, known as LiPON, which may be deposited by RF magnetron sputtering of Li 3 PO 4 in N 2 .
  • a second useful electrolyte is the NASICON-type solid electrolytes of the formula Lii +x M'M"(P0 4 ) 3 , where M' and M" are transition or non-transition metals with an average oxidation state lower than +4.
  • the electrochemical device is selected from the group consisting of integrated battery, and power source, preferably an integrated battery, and/or wherein the electrolyte is an inorganic solid- state electrolyte.
  • the present invention relates to a device, such as long- lifetime autonomous applications such as lighting control unit, a presence and motion detection device, a building (energy) control unit, an autonomous light source, green house sensor platform, wireless add-on sensors, medical implantable device, OLED devices, presence detection, implantables, smart cards and hearing aids, comprising an electrochemical device according to the invention.
  • a device such as long- lifetime autonomous applications such as lighting control unit, a presence and motion detection device, a building (energy) control unit, an autonomous light source, green house sensor platform, wireless add-on sensors, medical implantable device, OLED devices, presence detection, implantables, smart cards and hearing aids, comprising an electrochemical device according to the invention.
  • FIG. 1 Sketch of trenches with battery layers
  • FIG. 2 SEM cross section of typical battery stack
  • Fig. 4 shows a straight 3D structure after 1 h ion beam etch: top edges are smoothened
  • Fig. 5 Capping of poly vinyl pyrrolidone polymer dissolved in an organic deposited by dipping and cured at 200 0 C under vacuum.
  • Fig. 6 shows a schematic drawing of formation of LOCOS.
  • Fig. 7 shows a schematic cross section of a LOCOS area.
  • Fig. 1 Sketch of trenches with battery layers. Therein a first (100) and second (170) current collector are shown. Further a substrate (110), such as a Si substrate, SiGe substrate, a barrier layer (120) covering the 3D structure, a conductor (130) provided on the barrier layer, such as silicon or doped silicon, a solid state electrolyte (140) and a cathode (150), such as LiCoO 2 , are shown.
  • a substrate such as a Si substrate, SiGe substrate, a barrier layer (120) covering the 3D structure, a conductor (130) provided on the barrier layer, such as silicon or doped silicon, a solid state electrolyte (140) and a cathode (150), such as LiCoO 2 , are shown.
  • FIG. 2 SEM cross-section of typical battery stack. Therein an anode layer (17), an electrolyte (15), a cathode (13), a current collector (10), and a substrate (14) are shown. Also the lithiation and delithiation of anode and cathode is indicated. Further, on the left side, the electron current is shown.
  • Fig. 3a-d shows KOH etched cavities with subsequent KOH dip (2 minutes) in order to smoothen the sharp top edge.
  • a global smoothening action is performed. It is noted that corner softening follows Si crystallographic plans. A straight plane is shown, having rough aspect. The structure is tapered with a combination KOH softening. As a result a slope of 10-15 degrees, having a length range of about 1 - 10 ⁇ m. A slope of 10 to 15 degrees (with respect to horizontal) is formed having a length range: 1 - 10 ⁇ m.
  • Fig. 4a-e shows a straight 3D structure after 1 h Ar ion beam etch: top edges are smoothened. Local smoothening action is performed only on the top part of pores/trenches. A moderate softening is obtained, but with a very accurate shape. Straight plan. The obtained slope: 10 to 15 degrees and the length range: 0.5 to 3 ⁇ m.
  • an isotropic silicon etch may be preformed in high SF 6 flows. Normally silicon can be continuously etched in a SF 6 IO 2 flow. The higher the SF 6 ratio, the more isotropic the silicon etching will be. This gives also a smoothening of edges.
  • Fig. 5a-c shows capping of polyvinyl pyrrolidone polymer dissolved in an organic deposited by dipping and cured at 200 0 C under vacuum.
  • a further embodiment is profiled etching of a trench edge after growing of LOCOS bird's beak.
  • LOCOS stands for Local oxidation of silicon. The concept is explained in Fig. 6.
  • Fig. 6a-e shows that a buffer oxide (660) is required since the silicon nitride (680) hard mask can not be grown on silicon (610) as such, (a) The areas that should not be locally oxidized are protected by silicon nitride, (b) during oxidation oxygen diffuses through the silicon oxide and oxidizes the silicon under the silicon nitride, (c) The silicon nitride hard mask is pressed upwards, giving the so-called bird's beak. When a LOCOS bird's beak (650) is grown around the 3D structures into which a battery stack will be deposited, the silicon edge of the trench is structured. After removal of the LOCOS bird's beak the silicon edge is smoothened.
  • Fig. 7a shows a trench with thin thermal oxide layer (720) and a SiN capping layer (700) both on planar site and in trench. Further the substrate (710), typically Si, SiN barrier layer (730) and oxide layer (720) are shown.
  • Fig. 7b shows a silicon substrate underneath SiN capping layer is oxidized (LOCOS formation).
  • Fig. 7c shows a silicon substrate after removal of SiN and SiO 2 .
  • Fig. 7d shows a SEM cross-section with a Bird's beak - LOCOS approach.
  • the corner softening is due to the thermal Si growth.
  • the dimension of the top corner depends directly on the SiO 2 thickness and the bird's beak dimension.
  • a curved soft corner is obtained.
  • the curvature radius, the shape as well as the thickness of the bird beak can be fined tuned with the process options, offering further advantages and possibilities.
  • the obtained slope is: 5 to 45 degrees, having a curved shape.
  • the length range is : -100 nm to 5 ⁇ m, having a depth: 1 to 5 ⁇ m.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Secondary Cells (AREA)

Abstract

La présente invention concerne une conception de batterie à semi-conducteur, à ions Li, modifiée et rechargeable, qui est de préférence intégrée dans du silicium 3D. Elle concerne également l’utilisation de la photolithographie dans la fabrication de batteries à semi-conducteur, telles que des piles au lithium, ainsi que l’utilisation de diverses techniques de gravure telles que la gravure chimique, par faisceau ionique, par plasma et par pulvérisation cathodique dans la fabrication de telles batteries. L’invention concerne particulièrement l’utilisation de procédés de dépôt par PVD, CVD et plasma-CVD et de gravure par pulvérisation cathodique pour réduire les contraintes verticales lors de la dilatation et de la contraction pendant la charge et la décharge. Les batteries semi-conductrices au lithium se basent sur l’échange réversible d’ions lithium entre deux électrodes (anode et cathode). Ces électrodes sont séparées par un électrolyte à l’état solide qui permet la diffusion/migration des ions lithium et qui empêche le transport des électrons.
PCT/IB2009/054253 2008-10-14 2009-09-29 Dispositif électrochimique en 3d WO2010043991A1 (fr)

Applications Claiming Priority (2)

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EP08166585.3 2008-10-14
EP08166585 2008-10-14

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WO2010043991A1 true WO2010043991A1 (fr) 2010-04-22

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064088A (zh) * 2010-10-11 2011-05-18 山东华光光电子有限公司 一种干法与湿法混合制备蓝宝石图形衬底的方法
US9107335B2 (en) 2013-02-19 2015-08-11 Infineon Technologies Ag Method for manufacturing an integrated circuit and an integrated circuit
US9728494B2 (en) 2015-09-24 2017-08-08 Verily Life Sciences Llc Body-mountable device with a common substrate for electronics and battery
WO2023283216A1 (fr) * 2021-07-06 2023-01-12 Celgard, Llc Cellules de batterie améliorées et ses composants

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007125510A2 (fr) * 2006-05-02 2007-11-08 Nxp B.V. Dispositif electrique comprenant une electrode amelioree

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007125510A2 (fr) * 2006-05-02 2007-11-08 Nxp B.V. Dispositif electrique comprenant une electrode amelioree

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064088A (zh) * 2010-10-11 2011-05-18 山东华光光电子有限公司 一种干法与湿法混合制备蓝宝石图形衬底的方法
CN102064088B (zh) * 2010-10-11 2012-10-24 山东华光光电子有限公司 一种干法刻蚀与湿法腐蚀混合制备蓝宝石图形衬底的方法
US9107335B2 (en) 2013-02-19 2015-08-11 Infineon Technologies Ag Method for manufacturing an integrated circuit and an integrated circuit
DE102014101058B4 (de) 2013-02-19 2022-11-24 Infineon Technologies Ag Verfahren zur herstellung einer integrierten schaltung und integrierte schaltung
US9728494B2 (en) 2015-09-24 2017-08-08 Verily Life Sciences Llc Body-mountable device with a common substrate for electronics and battery
US10134692B2 (en) 2015-09-24 2018-11-20 Verily Life Sciences Llc Body-mountable device with a common substrate for electronics and battery
US10573607B2 (en) 2015-09-24 2020-02-25 Verily Life Sciences Llc Body-mountable device with a common substrate for electronics and battery
WO2023283216A1 (fr) * 2021-07-06 2023-01-12 Celgard, Llc Cellules de batterie améliorées et ses composants

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