WO2009116162A1

WO2009116162A1 - Process for manufacture of packaged micro moving element, and packaged micro moving element

Info

Publication number: WO2009116162A1
Application number: PCT/JP2008/055242
Authority: WO
Inventors: 文彦中澤; 広章井上; 寛石川; 隆史勝木
Original assignee: 富士通株式会社
Priority date: 2008-03-21
Filing date: 2008-03-21
Publication date: 2009-09-24

Abstract

Disclosed is a micro moving element (X). The micro moving element (X) is produced by a process comprising: a first bonding step for bonding a first packaging wafer to a first surface of a device wafer; a second bonding step for bonding a second packaging wafer to a second surface of the device wafer; and a step for forming a through-hole (82a) in a first packaging member-formed area. At least one of the first and second bonding steps which is to be carried out later is achieved by a room-temperature bonding method.

Description

Packaged micro movable element manufacturing method and packaged micro movable element

The present invention relates to a method of manufacturing a micro movable element such as an acceleration sensor or an angular velocity sensor packaged with a movable part, and a packaged micro movable element.

In recent years, in various technical fields, devices having micro structures formed by micromachining technology have been applied. Such an element includes a sensing device (an angular velocity sensor, an acceleration sensor, etc.) having a minute movable part or a swinging part. Such sensing devices are used in, for example, digital camera, video camera, camera shake prevention function of camera-equipped mobile phone, and car navigation system, airbag opening timing system, attitude control system such as car and robot. Is done.

A sensing device with a micro structure includes, for example, a swingable movable part, a fixed part, a connecting part that connects the movable part and the fixed part, a drive electrode pair for driving the movable part, and a movable part A detection electrode pair for detecting operation and displacement is provided, and a plurality of terminal portions for external connection. In such a sensing device, adhesion of foreign matter or dust to the electrode or damage to the electrode can be a cause of deterioration in operating performance. Therefore, packaging may be performed at the wafer level in the manufacturing process of the sensing device in order to avoid adhesion of foreign matter or dust to the electrode or damage to the electrode. Techniques related to packaging are described in, for example, the following Patent Documents 1 to 3.

JP 2001-196484 A JP 2005-129888 A JP 2005-251898 A

Some packaged sensing devices include a plurality of conductive plugs that penetrate through a packaging member and are electrically connected to a plurality of terminal portions for external connection of the sensing device. In this type of packaged sensing device, the sensing device is electrically connected to the outside through these conductive plugs. However, in order to manufacture this type of packaged sensing device, it is necessary to go through a number of steps in order to embed a conductive plug in the packaging member. Therefore, a packaged sensing device including a conductive plug that penetrates the packaging member is not preferable in terms of reducing manufacturing costs.

In the manufacturing process of the packaged sensing device, the movable part of the sensing device is sealed. For example, a first packaging wafer including a plurality of packaging member forming sections for forming a first packaging member on one surface side of a device wafer including a plurality of device forming sections for forming a sensing device is provided. In addition, a second packaging wafer including a plurality of packaging member forming sections for forming the second packaging member is bonded to the other surface side of the device wafer. The part is sealed in a predetermined sealed space. For example, in such a manufacturing process, conventionally, a device wafer and each packaging member are bonded by a so-called anodic bonding method. Anodic bonding is a bonding technique in which a surface of a bonding target is heated to, for example, about 400 ° C., and a voltage of, for example, about 500 V is applied between the surfaces to be bonded to generate an electrostatic attractive force to form a covalent bond at the bonding interface. It is known that during anodic bonding, a gas such as oxygen is inevitably generated at the bonded portion. In the manufacturing process as described above, part of the gas generated during anodic bonding is enclosed in the sealed space. In the prior art, due to the presence of the enclosed gas, there may be a case where a sufficient degree of vacuum cannot be obtained in the sealed space. As the degree of vacuum in the sealed space is lower, the high-frequency vibration of the movable part is hindered and the sensitivity as a sensing device tends to decrease, which is not preferable from the viewpoint of improving the performance of the sensing device.

The present invention has been conceived under such circumstances, and includes a packaged micro movable device manufacturing method and a packaged micro movable device suitable for electrical connection by wire bonding and for high performance. provide.

According to the first aspect of the present invention, a micro movable element having a movable part and a terminal part for external connection, and a first packaging having a through hole at a position corresponding to the terminal part and joined to the micro movable element. A method is provided for manufacturing a packaged micro movable device comprising a member and a second packaging member joined to the micro movable device on the opposite side of the first packaging member. In this element, at least a part of the terminal portion faces the through hole. The method includes a first bonding step, a second bonding step, a first packaging wafer processing step, and a cutting step. In the first bonding step, the first surface side of a device wafer having a first surface and a second surface opposite to the first surface and including a plurality of micro movable element forming sections for forming micro movable elements In addition, a first packaging wafer including a plurality of first packaging member formation sections for forming the first packaging member and having a resistivity of 100 Ωcm or more is bonded. In the second bonding step, a second packaging wafer including a plurality of second packaging member forming sections for forming the second packaging member is bonded to the second surface side of the device wafer. The first bonding step may be performed before the second bonding step, or the second bonding step may be performed before the first bonding step. At least one of the first joining step and the second joining step is performed by a room temperature joining method. Through such first and second bonding steps, packaging at the wafer level is achieved. In the first packaging wafer processing step, a through hole is formed in each first packaging member forming section. In the cutting step, the stacked structure including the device wafer, the first packaging wafer, and the second packaging wafer is cut. By passing through the cutting process, individual pieces in a state where each micro movable element is packaged are obtained. The individual or packaged micro movable element has a structure in which at least a part of a terminal portion for external connection of the micro movable element is exposed outside the package.

The packaged micro movable element obtained by this method can be configured to be electrically connected to an external circuit or the like by wire bonding because at least a part of the terminal portion for external connection is exposed outside the package. Is possible. In the packaged micro movable element, since the first packaging member has a resistivity of 100 Ωcm or more, the wiring formed so as to pass through the through hole of the first packaging member by wire bonding and the first packaging member are movable. It is possible to sufficiently suppress the generation of stray capacitance due to capacitive coupling with the packaging member (if a significant stray capacitance is generated, the movable part can be driven at a minute signal level) Detection is hindered). Such a packaged micro movable element need not be provided with a conductive plug for external connection penetrating the packaging member, and is preferable from the viewpoint of, for example, manufacturing cost reduction. Thus, according to the present method, a packaged micro movable element suitable for electrical connection by wire bonding can be manufactured.

In this method, at least one of the first bonding step and the second bonding step for realizing the wafer level package is performed by a room temperature bonding method. Therefore, this method is suitable for achieving a high degree of vacuum in a sealed space formed in the package and enclosing the movable part. The room temperature bonding method is a method in which impurities on the surface to be bonded are removed by etching with an Ar beam or the like in a high vacuum to clean the bonding surface (with the dangling bonds of the constituent atoms exposed). This is a bonding method in which gas is not generated during anodic bonding as in anodic bonding. The higher the degree of vacuum in the sealed space, the easier it is for the movable part to vibrate at high frequency, and the sensitivity as a sensing device tends to improve, which is preferable from the viewpoint of improving the performance of the sensing device.

As described above, the packaged micro movable device manufacturing method according to the first aspect of the present invention is suitable for electrical connection by wire bonding and also for high performance.

In addition, the packaged micro movable element manufacturing method can easily ensure the strength or ease of handling of the first packaging wafer before being bonded to the device wafer. This is because the first packaging wafer provided for the first bonding step in the present method has no opening that penetrates the wafer. The through hole to be formed in the first packaging member to expose the terminal portion of the micro movable element to the outside of the package is formed after wafer level packaging is achieved (after both the first and second bonding steps are completed). ), Formed by processing the first packaging wafer which is in a state of being hardly damaged by being bonded to the device wafer (first packaging wafer processing step).

In the first packaging wafer processing step according to the first aspect of the present invention, preferably, the first packaging wafer is thinned in each first packaging member forming section. When such a configuration is employed, the thickness of the first packaging wafer (including a plurality of sections for forming the first packaging member in the manufactured packaged micro movable device) to be used in the first bonding step The thickness of the first packaging member is not the same as the thickness of the first packaging member but is thicker than the first packaging member. After wafer level packaging is achieved (after both the first and second bonding steps are completed), processing is performed on the first packaging wafer that is bonded to the device wafer and is less likely to be damaged. By being applied, the first packaging wafer is thinned to a desired degree (first packaging wafer processing step). The first packaging member is derived from the first packaging wafer thus thinned. The configuration in which the first packaging wafer is thinned in the first packaging wafer processing step ensures the packaged micro movable element while ensuring the strength or ease of handling of the first packaging wafer before being bonded to the device wafer. It is suitable for thinning.

Preferably, before or after the first bonding step, a concave portion is formed at a through hole forming portion in each first packaging member forming section of the first packaging wafer. When the concave portion is formed before the first bonding step, the process of removing the resist pattern used for forming the concave portion using, for example, a stripping solution after the first bonding step can be avoided. It can be avoided that the stripping solution permeates into the joint portion and the joint portion is peeled off.

Preferably, the first packaging member forming section includes a first region and a second region including the through hole forming portion and the periphery thereof, and the first packaging wafer processing step is performed with respect to the second region. It includes a first step of forming a through-hole while thinning the second region by performing an anisotropic etching process, and a second step of thinning the first region while further thinning the second region. According to such a method, in the first packaging wafer processing step, the first packaging wafer can be appropriately thinned, and a through hole or an opening that penetrates the first packaging wafer can be appropriately formed.

Preferably, before the first bonding step, a recess that will be opposed to the movable portion of the micro movable element is formed in each first packaging member forming section of the first packaging wafer. Such a configuration is suitable for avoiding that the movable portion that swings when the micro movable element is driven contacts the first packaging member.

Preferably, prior to the second bonding step, a recess that will face the movable portion of the micro movable element is formed in each second packaging member forming section of the second packaging wafer. Such a configuration is suitable for avoiding that the movable portion that swings when the micro movable element is driven contacts the second packaging member.

Preferably, in the first packaging wafer processing step, at least the opening end of the through hole is formed in a shape that widens as the distance from the micro movable element increases. Such a configuration is suitable for wire bonding to a terminal portion exposed outside the package through the through hole of the first packaging member of the packaged micro movable element to be manufactured.

Preferably, in the first bonding step, the device wafer and the first packaging wafer are bonded via an insulating film. Such a configuration is suitable for electrically separating the device wafer and the first packaging wafer.

Preferably, in the second bonding step, the device wafer and the second packaging wafer are bonded via an insulating film. Such a configuration is suitable for electrically separating the device wafer and the second packaging wafer.

Preferably, the device wafer has a laminated structure including a first layer having a first surface, a second layer having a second surface, and an intermediate layer between the first and second layers. A bonding process is performed before the first bonding process, and a etching process is performed on the second layer using the mask pattern provided on the second surface of the device wafer as a mask before the second bonding process. Do. In this case, a processing step of performing an etching process on the first layer using the mask pattern provided on the first surface of the device wafer as a mask after the second bonding step and before the first bonding step. It is preferred to do so. Alternatively, the first bonding step is performed before the second bonding step, and the first layer is etched using the mask pattern provided on the first surface of the device wafer as a mask before the first bonding step. You may perform the process which gives. In this case, a processing step of performing an etching process on the second layer using the mask pattern provided on the second surface of the device wafer as a mask after the first bonding step and before the second bonding step. It is preferred to do so.

According to a second aspect of the present invention, a micro movable element is provided. The micro movable device includes a micro movable device having a movable portion and a terminal portion, and a first packaging bonded to the micro movable device having a through hole at a position corresponding to the terminal portion and having a resistivity of 100 Ωcm or more. And a second packaging member joined to the micro movable element on a side opposite to the first packaging member, and at least one of the first and second packaging members and the micro movable element are joined at room temperature. ing. Such a micro movable element can be appropriately manufactured by the packaged micro movable element manufacturing method according to the first aspect of the present invention.

In the second aspect of the present invention, preferably, the first packaging member includes a first portion and a second portion that is thinner than the first portion, including the through hole formation portion and the periphery thereof. Such a configuration is suitable for wire bonding to the terminal portion exposed outside the package through the through hole of the first packaging member.

Preferably, the first packaging member and the second packaging member have a recess at a location facing the movable portion of the micro movable element. Preferably, at least the open end of the through hole has a shape that widens as the distance from the micro movable element increases. Preferably, an insulating film is interposed between the micro movable element and the first packaging member and / or between the micro movable element and the second packaging member.

The present micro movable element preferably includes a fixed portion and a connecting portion for connecting the fixed portion and the movable portion in addition to the movable portion and the terminal portion, and the movable portion is swingable. More preferably, the micro movable element is a sensing device such as an angular velocity sensor or an acceleration sensor.

FIG. 1 is a partially omitted plan view of a packaged device according to the present invention. FIG. 2 is another partially omitted plan view of the packaged device according to the present invention. FIG. 3 is a cross-sectional view taken along line III-III in FIG. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. FIG. 9 is an enlarged cross-sectional view when the packaged device according to the present invention is electrically connected to an external circuit. FIG. 10 shows some steps in the first method for manufacturing a packaged device according to the present invention. FIG. 11 shows a process following FIG. FIG. 12 shows a process following FIG. FIG. 13 shows a process subsequent to FIG. FIG. 14 shows a step that follows FIG. FIG. 15 shows a method for manufacturing one packaging wafer in the present invention. It represents the middle of forming an electrical connection by wire bonding. FIG. 17 shows some steps in the second method for manufacturing the packaged device according to the present invention. FIG. 18 shows a step that follows FIG. FIG. 19 shows a step that follows FIG. FIG. 20 shows a step that follows FIG.

1 to 8 show a packaged device X according to the present invention. FIG. 1 is a partially omitted plan view of the packaged device X, and FIG. 2 is another partially omitted plan view of the packaged device X. 3 to 8 are cross-sectional views taken along line III-III, line IV-IV, line VV, line VI-VI, line VII-VII, and line VIII-VIII in FIG. 1, respectively.

The packaged device X includes a sensing device Y, a packaging member 80 (omitted in FIG. 1), and a packaging member 90 (omitted in FIG. 2).

The sensing device Y includes a land portion 10, an inner frame 20, an outer frame 30, a pair of connecting portions 40, a pair of connecting portions 50, a detection electrode 61 (not shown in FIG. 1), and a detection electrode 62A. , 62B (not shown in FIG. 2) and driving

electrodes

71A, 71B, 72A, 72B, and configured as an angular velocity sensor. The sensing device Y is manufactured by processing a wafer which is a so-called SOI (silicon on insulator) substrate by a bulk micromachining technology such as a MEMS technology. The wafer has, for example, a laminated structure composed of first and second silicon layers and an insulating layer between the silicon layers, and each silicon layer is given predetermined conductivity by doping impurities. FIG. 1 is a plan view of the packaged device X as viewed from the side of the packaging member 80 (not shown in FIG. 1). In FIG. 1, a portion that originates from the first silicon layer and protrudes from the insulating layer toward the front side of the drawing. Is represented by hatching. FIG. 2 is a plan view of the packaged device X as viewed from the side of the packaging member 90 (not shown in FIG. 2). In FIG. 2, a portion that originates from the second silicon layer and protrudes from the insulating layer toward the front side of the drawing. Is represented by hatching.

The land part 10 is a part derived from the first silicon layer. As shown in FIGS. 3 and 5, a conductive plug 11 is embedded in the land portion 10.

For example, as shown in FIG. 3, the inner frame 20 includes a first layer portion 21 derived from the first silicon layer, a second layer portion 22 derived from the second silicon layer, and an insulating layer 23 therebetween. It has the laminated structure which becomes. As shown in FIG. 1, the first layer portion 21 includes

portions

21a, 21b, 21c, 21d, 21e, and 21f. The portions 21a to 21f are separated from each other via a gap.

As shown in FIGS. 3 and 4, for example, the outer frame 30 includes a first layer portion 31 derived from the first silicon layer, a second layer portion 32 derived from the second silicon layer, and an insulating layer therebetween. 33. As shown in FIG. 1, the first layer portion 31 includes

portions

31a, 31b, 31c, 31d, 31e, 31f, 31g, and 31h. The portions 31a to 31h are separated from the surroundings through a gap, and constitute a terminal portion for external connection in the sensing device Y.

The pair of connecting portions 40 are portions for connecting the land portion 10 and the inner frame 20 and are derived from the first silicon layer. Each connecting portion 40 includes two torsion bars 41. As shown in FIG. 1, each torsion bar 41 of one connecting portion 40 is connected to the land portion 10 and to the portion 21a of the first layer portion 21 of the inner frame 20, and the land portion 10 and the portion 21a are electrically connected. Connect. Each torsion bar 41 of the other connecting portion 40 is connected to the land portion 10 and connected to the portion 21d of the first layer portion 21 of the inner frame 20 to electrically connect the land portion 10 and the portion 21d. Such a pair of connecting portions 40 defines an axis A <b> 1 of the swinging motion of the land portion 10. Each connecting portion 40 including two torsion bars 41 whose intervals gradually increase from the inner frame 20 side to the land portion 10 side is suitable for suppressing generation of unnecessary displacement components in the swinging operation of the land portion 10. It is.

The pair of connecting portions 50 are portions for connecting the inner frame 20 and the outer frame 30 and are derived from the first silicon layer. Each connecting portion 50 includes three

torsion bars

51, 52, and 53. As shown in FIG. 1, the torsion bar 51 in one connecting portion 50 is connected to the portion 21 a of the first layer portion 21 of the inner frame 20 and to the portion 31 a of the first layer portion 31 of the outer frame 30. The

portions

21a and 31a are electrically connected, and the torsion bar 52 is connected to the portion 21b of the first layer portion 21 of the inner frame 20 and connected to the portion 31b of the first layer portion 31 of the outer frame 30 to be the portion 21b. , 31b are electrically connected, and the torsion bar 53 is connected to the portion 21c of the first layer portion 21 of the inner frame 20 and is connected to the portion 31c of the first layer portion 31 of the outer frame 30 to the

portions

21c, 31c. Are electrically connected. The torsion bar 51 in the other connecting portion 50 is connected to the portion 21d of the first layer portion 21 of the inner frame 20 and connected to the portion 31d of the first layer portion 31 of the outer frame 30 to electrically connect the

portions

21d and 31d. The torsion bar 52 is connected to the portion 21e of the first layer portion 21 of the inner frame 20 and is connected to the portion 31e of the first layer portion 31 of the outer frame 30 to electrically connect the

portions

21e and 31e. The torsion bar 53 is connected to the portion 21 f of the first layer portion 21 of the inner frame 20 and is connected to the portion 31 f of the first layer portion 31 of the outer frame 30 to electrically connect the

portions

21 f and 31 f. Such a pair of connecting portions 50 defines an axis A <b> 2 of the swinging motion of the inner frame 20. Each connecting portion 50 including two

torsion bars

51 and 53 whose intervals gradually increase from the outer frame 30 side to the inner frame 20 side suppress the generation of unnecessary displacement components in the swinging operation of the inner frame 20. It is suitable for.

The detection electrode 61 is a part derived from the second silicon layer. As shown in FIGS. 3 and 5, the detection electrode 61 is joined to the land portion 10 via the insulating layer 12 derived from the above insulating layer, and penetrates the land portion 10 and the insulating layer 12. The detection electrode 61 and the land portion 10 are electrically connected via the conductive plug 11.

The detection electrode 62A is a part derived from the first silicon layer. As shown in FIG. 5, the detection electrode 62 </ b> A extends from the portion 21 b of the first layer portion 21 of the inner frame 20 to the land portion 10 side and has a portion facing the detection electrode 61. The detection electrode 62A has a plurality of openings.

The detection electrode 62B is a part derived from the first silicon layer. As shown in FIG. 5, the detection electrode 62 </ b> B extends from the portion 21 e of the first layer portion 21 of the inner frame 20 toward the land portion 10 and has a portion facing the detection electrode 61. The detection electrode 62B has a plurality of openings.

The driving electrode 71A is a comb-shaped electrode derived from the first silicon layer, and includes a plurality of electrode teeth 71a extending from the portion 21c in the inner frame 20, as shown in FIG. The plurality of electrode teeth 71a are parallel to each other, for example, as shown in FIGS. Such a driving electrode 71A is thinner than the first layer portion 21 of the inner frame 20 in the element thickness direction.

The driving electrode 71B is a comb-shaped electrode derived from the first silicon layer, and includes a plurality of electrode teeth 71b extending from the portion 21f of the inner frame 20. The plurality of electrode teeth 71b are parallel to each other. Such a driving electrode 71B is thinner than the first layer portion 21 of the inner frame 20 in the element thickness direction.

The driving electrode 72A is a comb-shaped electrode derived from the first silicon layer, and is arranged to face the driving electrode 71A and includes a plurality of electrode teeth 72a extending from the portion 31g in the outer frame 30. The plurality of electrode teeth 72a are parallel to each other as shown in FIGS. 1 and 6, for example, and are also parallel to the electrode teeth 71a of the drive electrode 71A described above. Such a drive electrode 72A is thicker than the drive electrode 71A in the element thickness direction.

The driving electrode 72B is a comb-shaped electrode derived from the first silicon layer, and is arranged to face the driving electrode 71B and includes a plurality of electrode teeth 72b extending from the portion 31h in the outer frame 30. The plurality of electrode teeth 72b are parallel to each other, and are also parallel to the electrode teeth 71b of the drive electrode 71B described above. Such a driving electrode 72B is thicker than the driving electrode 71B in the element thickness direction.

The packaging member 80 is joined to the first layer portion 31 side of the outer frame 30 of the sensing device Y, and has a recess 80a at a location corresponding to the movable portion of the sensing device Y. Further, for example, as shown in FIG. 3 and FIG. 5, the packaging member 80 has a first part 81 and a second part 82 thinner than the first part 81, and the second part 82 has a through hole 82 a. Is formed. The thickness of the first portion 81 is, for example, 50 to 200 μm. The thickness of the second portion 82 is, for example, 20 to 100 μm as long as it is smaller than the thickness of the first portion 81. The diameter of the through hole 82a is, for example, 20 to 100 μm. As shown in FIGS. 3, 5, 7, and 8, each of the portions 31a to 31h, which are external connection terminal portions in the sensing device Y, partially faces the through hole 82a. That is, the portions 31a to 31h serving as the terminal portions are all exposed to the outside of the package through the through holes 82a. Such a packaging member 80 is made of a high resistance silicon material of 100 Ωcm or more.

The packaging member 90 is joined to the second layer portion 32 side of the outer frame 30 of the sensing device Y, and has a recess 90a at a location corresponding to the movable portion of the sensing device Y. The packaging member 90 is made of, for example, a glass material.

At least one of the

packaging members

80 and 90 is bonded to the sensing device Y by a room temperature bonding method. The sensing device Y is sealed by the

packaging members

80 and 90. That is, a sealed space S that encloses the movable portion (land portion 10, inner frame 20,

detection electrodes

61, 62A, 62B) of sensing device Y is formed in the package.

The packaged device X having the above configuration can be connected to an external circuit by wire bonding. As shown in FIG. 9 as an example of the portion 31g serving as the terminal portion, each terminal portion (portions 31a to 31h) exposed in each through hole 82a of the packaging member 80 and a predetermined terminal portion of the external circuit, It can be electrically connected via a wiring W formed by wire bonding.

When the sensing device Y as an angular velocity sensor is driven, the movable part (land part 10, inner frame 20,

detection electrodes

61, 62A, 62B) is swung around the axis A2 at a predetermined frequency or cycle. This swinging operation is realized by alternately repeating voltage application between the

drive electrodes

71A and 72A and voltage application between the

drive electrodes

71B and 72B. At that time, application of a potential to the driving electrode 71A can be realized via the portion 31c in the outer frame 30, the torsion bar 53 of one connecting portion 50, and the portion 21c in the inner frame 20. The application of a potential to the driving electrode 71B can be realized through the portion 31f in the outer frame 30, the torsion bar 53 of the other connecting portion 50, and the portion 21f in the inner frame 20. The application of the potential to the driving electrode 72A can be realized through the portion 31g in the outer frame 30. The application of the potential to the driving electrode 72B can be realized through the portion 31h in the outer frame 30. In the present embodiment, for example, the

drive electrodes

71A and 71B are connected to the ground, and then the application of the predetermined potential to the drive electrode 72A and the application of the predetermined potential to the drive electrode 72B are alternately repeated. The part can be swung. For example, as shown in FIG. 3, since the

recesses

80 a and 90 a are provided in the

packaging members

80 and 90, the movable portion does not contact the

packaging members

80 and 90 during the swinging operation.

For example, when a predetermined angular velocity or acceleration is applied to the sensing device Y or the movable part in a state where the movable part is swung or vibrated as described above, the land part 10 includes the detection electrode 61 and the axis A1. The displacement of the

detection electrodes

61 and 62A is changed by a predetermined amount of rotation, the capacitance between the

detection electrodes

61 and 62A is changed, and the relative arrangement of the

detection electrodes

61 and 62B is changed. Changes to change the capacitance between the

detection electrodes

61 and 62B. Based on these capacitance changes (for example, based on the difference between the two capacitances), the rotational displacement amount of the land portion 10 and the detection electrode 61 can be detected. Based on the detection result, the angular velocity and acceleration acting on the sensing device Y or the movable part can be calculated. The packaged device X including such a sensing device Y is, for example, a digital camera, a video camera, a camera shake prevention function for a camera-equipped mobile phone, and a posture of a car navigation system, an airbag opening timing system, a car, a robot, or the like. It can be used for control system applications.

10 to 14 show a first method for manufacturing the packaged device X by the micromachining technology. 10 to 13 show changes in cross section corresponding to FIG. 5 included in a single device formation section. FIG. 14 represents a partial cross section across multiple device forming sections.

In this method, first, a device wafer 100 as shown in FIG. The device wafer 100 is an SOI wafer having a laminated structure including silicon layers 101 and 102 and an insulating layer 103 between the silicon layers 101 and 102, and a plurality of devices on which a sensing device Y is formed. Includes forming compartment. The silicon layer 101 has a first surface 101 'and the silicon layer 102 has a second surface 102'. The silicon layers 101 and 102 are made of a silicon material imparted with conductivity by doping impurities. As the impurities, p-type impurities such as B and n-type impurities such as P and Sb can be employed. The insulating layer 103 is made of, for example, silicon oxide. The thickness of the silicon layer 101 is, for example, 10 to 100 μm, the thickness of the silicon layer 102 is, for example, 100 to 500 μm, and the thickness of the insulating layer 103 is, for example, 1 to 2 μm.

Next, as shown in FIG. 10B, a through hole 101a penetrating the silicon layer 101 and the insulating layer 103 is formed. Specifically, first, after a resist pattern (not shown) having a predetermined opening is formed on the silicon layer 101, the insulating layer is formed by DRIE (Deep Reactive Ion Etching) using the resist pattern as a mask. An anisotropic dry etching process is performed on the silicon layer 101 until 103 is partially exposed. In DRIE, good anisotropic dry etching can be performed in a Bosch process in which etching and sidewall protection are alternately performed. Such a Bosch process can be adopted for this step and the subsequent DRIE. Thereafter, the exposed portion of the insulating layer 103 is removed by another etching method (for example, wet etching using buffered hydrofluoric acid [BHF] made of hydrofluoric acid and ammonium fluoride). In this way, the through hole 101a can be formed.

Next, as shown in FIG. 10C, the conductive plug 11 is formed. Specifically, the conductive plug 11 can be formed by filling the through hole 101a with a conductive material.

Next, as shown in FIG. 10D, an oxide film pattern 104 is formed on the silicon layer 101, and an oxide film pattern 105 is formed on the silicon layer 102. A resist pattern (not shown) is also formed on the silicon layer 101. The resist pattern outside this figure has a pattern shape corresponding to the driving electrode 71A (electrode tooth 71a) and the driving electrode 71B (electrode tooth 71b) to be formed in the silicon layer 101. The oxide film pattern 104 has a pattern shape corresponding to a portion other than the driving

electrodes

71A and 71B to be formed in the silicon layer 101. The oxide film pattern 105 has a pattern shape corresponding to a portion to be formed in the silicon layer 102.

In forming the oxide film pattern 104, first, for example, a silicon oxide film is formed on the surface of the silicon layer 101 by a CVD method until the thickness becomes, for example, 1 μm. Next, the oxide film on the silicon layer 101 is patterned by etching using a predetermined resist pattern as a mask. The oxide film pattern 105 can also be formed on the silicon layer 102 through formation of an oxide material, formation of a resist pattern on the oxide film, and subsequent etching treatment. On the other hand, in forming a resist pattern (not shown), first, a predetermined liquid photoresist is formed on the silicon layer 101 by spin coating. Next, the photoresist film is patterned through an exposure process and a subsequent development process.

Next, as shown in FIG. 11A, the silicon layer 102 is etched by DRIE using the oxide film pattern 105 as a mask. In this step, a part of the inner frame 20 to be formed in the silicon layer 102, a part of the outer frame 30, and the detection electrode 61 are formed.

Next, as shown in FIG. 11B, the oxide film pattern 105 is removed by etching. As an etching method, dry etching or wet etching can be employed. When dry etching is employed, for example, HF gas can be employed as the etching gas. When employing wet etching, for example, BHF can be used as the etchant.

Next, as shown in FIG. 11C, the packaging wafer 205 is bonded to the second surface 102 'side of the device wafer 100 (second bonding step in the present invention). The packaging wafer 205 includes a plurality of packaging member forming sections in which the packaging member 90 is formed, and has a recess 90a in each section (the recess 90a is, for example, an unprocessed packaging wafer). After forming a predetermined oxide film pattern on 205, it can be formed by etching the packaging wafer 205 using the oxide film pattern as a mask. As a bonding technique in this step, a room temperature bonding method or an anodic bonding method can be employed.

Next, as shown in FIG. 11 (d), the oxide film pattern 104 and the resist pattern not shown above are used as a mask, and the depth in the middle of the thickness direction of the silicon layer 101 of the device wafer 100 is obtained by DRIE. Until then, the silicon layer 101 is etched. The depth substantially corresponds to the height of the

drive electrodes

71A and 71B.

Next, after removing the resist pattern (not shown), the silicon layer 101 is etched by DRIE using the oxide film pattern 104 as a mask as shown in FIG. In this step, the land portion 10 to be formed in the silicon layer 101, a part of the inner frame 20, a part of the outer frame 30, the connecting

portions

40 and 50, the

detection electrodes

62A and 62B, and the driving

electrode

71A, 71B, 72A and 72B are formed. After this step, the exposed portions of the insulating layer 103 and the oxide film pattern 104 are removed by etching.

Next, as shown in FIG. 12B, the packaging wafer 201 is bonded to the first surface 101 'side of the device wafer 100 (first bonding step in the present invention). The packaging wafer 201 includes a plurality of packaging member forming sections in which the packaging member 80 is formed, and has a recess 80a for each section. A room temperature bonding method is employed as a bonding method in this step. The room temperature bonding method is a method in which impurities on the surface to be bonded are removed by etching with an Ar beam or the like in a high vacuum to clean the bonding surface (with the dangling bonds of the constituent atoms exposed). This is a bonding method in which gas is not generated during anodic bonding as in anodic bonding.

FIG. 15 shows a method for manufacturing the packaging wafer 201 as a change in cross section corresponding to the cross section of the packaging wafer 201 shown in FIG.

In manufacturing the packaging wafer 201, first, as shown in FIG. 15A,

oxide film patterns

202 and 203 are formed on the wafer 201 '. The wafer 201 ′ is a silicon wafer and is made of a silicon material having a high resistivity of 100 Ωcm or more. The thickness of the wafer 201 'is, for example, 200 to 500 μm. The

oxide film patterns

202 and 203 are made of, for example, silicon oxide. The thicknesses of the

oxide film patterns

202 and 203 are, for example, 0.1 to 2 μm. Such

oxide film patterns

202 and 203 can be formed, for example, by forming an oxide film on the surface of the wafer 201 'by a thermal oxidation method and then patterning the oxide film.

Next, as shown in FIG. 15B, a recess 80a is formed in the wafer 201 '. By using the resist pattern (not shown) used for patterning the oxide film pattern 203 as a mask, the recesses 80a can be formed by performing a dry etching process on the wafer 201 '.

Next, as shown in FIG. 15C, a resist pattern 204 is formed on the wafer 201 ′ so as to cover the oxide film pattern 202. The resist pattern 204 has an opening 204a.

Next, as shown in FIG. 15D, a recess 82a 'is formed. Specifically, using the resist pattern 204 as a mask, the wafer 201 ′ is etched to a depth in the middle of the wafer 201 ′ by DRIE. Thereafter, the resist pattern 204 is removed using, for example, a stripping solution.

In the bonding step shown in FIG. 12B, the first surface 101 ′ of the silicon layer 101 of the device wafer 100, while aligning the packaging wafer 201 manufactured as described above and the device wafer 100, The oxide film pattern 203 (insulating film) on the packaging wafer 201 is bonded. At this time, in order to perform accurate alignment, the recesses 82a ′ already formed on the packaging wafer 201 and the terminal portions (portions 31a to 31h) already formed on the device wafer 100 are aligned. . Moreover, this joining process is performed by the normal temperature joining method. Through this step, the inside of the package is substantially vacuum-sealed, and packaging at the wafer level is achieved (sealed space S is formed).

In the manufacture of the packaged device X, next, as shown in FIG. 12C, the packaging wafer 205 is thinned by, for example, performing DRIE or polishing treatment.

Next, as shown in FIG. 13A, using the oxide film pattern 202 as a mask, the packaging wafer 201 to the depth in the middle of the thickness direction of the packaging wafer 201 to the wafer 201 ′ by DRIE. Etching is performed on the wafer 201 ′ (start of the first packaging wafer processing step in the present invention). As a result, a region of the wafer 201 ′ that is not covered with the oxide film pattern 202 is thinned. At this time, the recess 82 a ′ extends downward in the drawing within the packaging wafer 201. Thereafter, the oxide film pattern 202 is removed.

Next, as shown in FIG. 13B, the packaging wafer 201 or the wafer 201 'is etched by DRIE. In this step, the region covered with the oxide film pattern 202 on the wafer 201 ′ is thinned, and the region not covered with the oxide film pattern 202 on the wafer 201 ′ is further thinned. A first portion 81 and a thin second portion 82 at 80 are formed. Further, the recess 82 a ′ penetrates the wafer 201 ′ and reaches the oxide film pattern 203.

Next, as shown in FIG. 13C, the portion of the oxide film pattern 203 that faces the recess 82a 'is removed by etching. In this step, the through hole 82a in each packaging member 80 is formed (end of the first packaging wafer processing step in the present invention).

Next, as shown in FIGS. 14A and 14B, the laminated structure including the device wafer 100 and the

packaging wafers

201 and 205 is cut (cutting process in the present invention). As described above, the packaged device X according to the present invention can be manufactured.

According to this method, since packaging at the wafer level can be achieved, the movable part (land part 10, inner frame 20, detection due to adhesion or damage of each part of the sensing device Y as a micro movable element) The deterioration of the operation performance of the

electrodes

61, 62A, 62B) can be suppressed.

In the packaged device X obtained by this method, as described above, part of the external connection terminal portions (parts 31a to 31h) are exposed outside the package, and are electrically connected to an external circuit or the like by wire bonding. It is possible to connect (the part 31g is shown in FIG. 9). In the packaged device X, since the packaging member 80 has a resistivity of 100 Ωcm or more, the wiring W formed so as to pass through the through hole 82a of the packaging member 80 by wire bonding and the packaging member 80. It is possible to sufficiently suppress stray capacitance from being capacitively coupled with each other (if significant stray capacitance occurs, driving and detection at a small signal level in the movable part is hindered. ) Therefore, the packaged device X is suitable for electrical connection by wire bonding. In such a packaged device X, it is not necessary to provide a conductive plug for external connection penetrating the packaging member, which is preferable from the viewpoint of, for example, manufacturing cost reduction.

In this method, the bonding step (first bonding step performed after the second bonding step) described above with reference to FIG. 12B for realizing the wafer level package is performed at least by the room temperature bonding method. Is called. The room temperature bonding method is a bonding method in which no gas is generated during anodic bonding as in anodic bonding. Therefore, this method is suitable for achieving a high degree of vacuum in the sealed space S formed in the package and enclosing the movable part (land part 10, inner frame 20,

detection electrodes

61, 62A, 62B). is there. The higher the degree of vacuum in the sealed space S, the easier it is for the movable part to vibrate at a high frequency, and the sensitivity of the sensing device Y tends to improve, which is preferable from the viewpoint of improving the performance of the sensing device Y.

This method makes it easy to ensure the strength or ease of handling of the packaging wafer 201 before being bonded to the device wafer 100. This is because the opening portion penetrating the wafer 201 is not formed in the packaging wafer 201 used in the bonding step (first bonding step) described above with reference to FIG. The through hole 82a to be formed in the packaging member 80 to expose the terminal portions (portions 31a to 31h) of the sensing device Y to the outside of the package is formed after the wafer level packaging is achieved (first and second bonding). After the processes are completed, the packaging wafer 201 is bonded to the device wafer 100 and is less likely to be damaged. Then, the packaging wafer 201 is processed (first packaging wafer processing process).

In this method, the packaged device X is appropriately thinned. A packaging wafer 201 (including a plurality of sections for forming the packaging member 80 in the manufactured packaged device X to be manufactured) used in the bonding process (first bonding process) described above with reference to FIG. ) Is not the same as the thickness of the packaging member 80, and the packaging wafer 201 thicker than the packaging member 80 is used for the first bonding step. After wafer level packaging is achieved (after both the first and second bonding steps are completed), the packaging wafer 201 that is bonded to the device wafer 100 and is less likely to be damaged is processed. As a result, the packaging wafer 201 is thinned to a desired degree (first packaging wafer processing step). The packaging member 80 is derived from the thinned packaging wafer 201 in this way. Also, a plurality of sections for forming the packaging wafer 205 (the packaging member 90 in the packaged device X to be manufactured) used in the bonding process (second bonding process) described above with reference to FIG. Is not the same as the thickness of the packaging member 90, and the packaging wafer 205 thicker than the packaging member 90 is subjected to the second bonding step. Then, after wafer level packaging is achieved, the packaging wafer 205 is bonded to the device wafer 100 and is less likely to be damaged. Is thinned. The packaging member 90 comes from the packaging wafer 205 thinned in this way. Therefore, this method is suitable for reducing the thickness of the packaged device X while ensuring the strength or ease of handling of the

packaging wafers

201 and 205 before being bonded to the device wafer 100.

In the packaging member 80 of the packaged device X manufactured by this method, the through hole 82a is provided in the second portion 82 that is thinner than the first portion 81. This is suitable for wire bonding to the terminal portions (portions 31a to 31h) partially exposed in the hole 82a. For example, as shown in FIG. 16, this contributes to avoiding the capillary C of the wire bonder WB from abutting against the packaging member 80 of the packaged device X during wire bonding.

In the packaged device X manufactured by this method, the packaging member 80 is bonded to the sensing device Y through the oxide film pattern 203 (insulating film). The sensing device Y and the packaging member 80 are electrically separated by the oxide film pattern 203, so that it is possible to prevent each part of the sensing device Y from being illegally electrically connected via the packaging member 80. .

When the packaging member 90 made of, for example, a silicon material is employed in the packaged device X, the sensing device Y and the packaging member 90 may be joined via an insulating film such as an oxide film. In this case, it is avoided that the sensing device Y and the packaging member 90 are electrically separated by the insulating film, and that each part of the sensing device Y is illegally electrically connected via the packaging member 90. Can do.

At least the open end of each through hole 82a of the packaging member 80 in the packaged device X may have a shape that widens as the distance from the sensing device Y increases, for example, as shown in FIG. Such a through hole 82a can be formed by appropriately adjusting the etching conditions in the process described above with reference to FIG. 13B and inclining the inner wall surface of the through hole 82a to a predetermined degree. it can. In such a configuration, for example, as shown in FIG. 16, it is easy to wire bond to the terminal portions (portions 31a to 31h) that are partially exposed in the respective through holes 82a.

Moreover, in this method, instead of performing the process described above with reference to FIGS. 15C and 15D prior to the bonding process (first bonding process) described above with reference to FIG. 15B, after bonding the packaging wafer 201 in the state shown in FIG. 15B to the device wafer 100 in the first bonding step, refer to FIGS. 15C and 15D for the packaging wafer 201. And you may perform the process mentioned above.

FIGS. 17 to 20 show a part of the second method for manufacturing the packaged device X by the micromachining technology. 17 to 20 show changes in cross section corresponding to FIG. 5 included in a single device formation section.

In this method, first, a device wafer 100 as shown in FIG. The device wafer 100 is an SOI wafer having a laminated structure including silicon layers 101 and 102 and an insulating layer 103 between the silicon layers 101 and 102, and a plurality of devices on which a sensing device Y is formed. Includes forming compartment. Next, as shown in FIG. 17B, a through hole 101a penetrating the silicon layer 101 and the insulating layer 103 is formed. Next, as shown in FIG. 17C, the conductive plug 11 is formed. Next, as illustrated in FIG. 17D, an oxide film pattern 104 is formed on the silicon layer 101, and an oxide film pattern 105 is formed on the silicon layer 102. A resist pattern (not shown) is also formed on the silicon layer 101. The steps shown in FIGS. 17A to 17D are specifically the same as the steps described above with reference to the first method with reference to FIGS. 10A to 10D.

Next, as shown in FIG. 18A, using the oxide film pattern 104 and a resist pattern outside the figure as a mask, the silicon layer 101 is formed to a depth in the thickness direction of the silicon layer 101 by DRIE. Etching is performed on the surface. The depth substantially corresponds to the height of the

drive electrodes

71A and 71B.

Next, after removing the resist pattern outside the figure, as shown in FIG. 18B, the silicon layer 101 is etched by DRIE using the oxide film pattern 104 as a mask. In this step, the land portion 10 to be formed in the silicon layer 101, a part of the inner frame 20, a part of the outer frame 30, the connecting

portions

40 and 50, the

detection electrodes

62A and 62B, and the driving

electrode

71A, 71B, 72A and 72B are formed. After this step, the oxide film pattern 104 is removed.

Next, as shown in FIG. 18C, the packaging wafer 201 is bonded to the first surface 101 'side of the device wafer 100 (first bonding step in the present invention). The packaging wafer 201 includes a plurality of packaging member forming sections in which the packaging member 80 is formed, and has a recess 80a for each section. The packaging wafer 201 can be manufactured as described above with reference to FIG. In this step, while aligning the packaging wafer 201 and the device wafer 100, the first surface 101 ′ of the silicon layer 101 of the device wafer 100 and the oxide film pattern 203 (insulating film) on the packaging wafer 201 Join. At this time, in order to perform accurate alignment, the recesses 82a ′ already formed on the packaging wafer 201 and the terminal portions (portions 31a to 31h) already formed on the device wafer 100 are aligned. . As a bonding technique in this step, a room temperature bonding method or an anodic bonding method can be employed.

Next, as shown in FIG. 18D, the silicon layer 102 is etched by DRIE using the oxide film pattern 105 as a mask. In this step, a part of the inner frame 20 to be formed in the silicon layer 102, a part of the outer frame 30, and the detection electrode 61 are formed.

Next, as shown in FIG. 19A, the exposed portions of the insulating layer 103 and the oxide film pattern 105 are removed by etching. As an etching method, dry etching or wet etching can be employed.

Next, as shown in FIG. 19B, the packaging wafer 205 is bonded to the second surface 102 'side of the device wafer 100 (second bonding step in the present invention). The packaging wafer 205 includes a plurality of packaging member forming sections in which the packaging member 90 is formed, and has a recess 90a for each section. Moreover, this joining process is performed by the normal temperature joining method. Through this step, the inside of the package is substantially vacuum-sealed, and packaging at the wafer level is achieved (sealed space S is formed).

Next, as shown in FIG. 19C, the packaging wafer 205 is thinned by, for example, performing DRIE or polishing treatment.

Next, as shown in FIG. 20A, using the oxide film pattern 202 as a mask, the packaging wafer 201 thru | or the depth in the middle of the thickness direction of the packaging wafer 201 thru | or wafer 201 'by DRIE. Etching is performed on the wafer 201 ′ (start of the first packaging wafer processing step in the present invention). As a result, a region of the wafer 201 ′ that is not covered with the oxide film pattern 202 is thinned. At this time, the recess 82 a ′ extends downward in the drawing within the packaging wafer 201. Thereafter, the oxide film pattern 202 is removed.

Next, as shown in FIG. 20B, the packaging wafer 201 or the wafer 201 'is etched by DRIE. In this step, the region covered with the oxide film pattern 202 on the wafer 201 ′ is thinned, and the region not covered with the oxide film pattern 202 on the wafer 201 ′ is further thinned. A first portion 81 and a thin second portion 82 at 80 are formed. Further, the recess 82 a ′ penetrates the wafer 201 ′ and reaches the oxide film pattern 203.

Next, as shown in FIG. 20C, the portion of the oxide film pattern 203 facing the recess 82a 'is removed by etching (end of the first packaging wafer processing step in the present invention). In this step, the through hole 82a in each packaging member 80 is formed.

Next, as shown in FIGS. 14A and 14B, the stacked structure including the device wafer 100 and the

packaging wafers

201 and 205 is cut in the same manner as described above with respect to the first method ( Cutting step in the present invention). The packaged device X according to the present invention can also be manufactured by the method as described above.

electrodes

61, 62A, 62B) can be suppressed.

According to this method, a packaged device X suitable for electrical connection by wire bonding can be manufactured as in the first method described above.

In this method, the bonding step described above with reference to FIG. 19B (second bonding step performed after the first bonding step) for realizing a wafer level package is performed at least by a room temperature bonding method. Is called. The room temperature bonding method is a bonding method in which gas is not generated during anodic bonding at the time of bonding. Therefore, the present method is formed in a package to form a movable portion (land portion 10, inner frame 20,

detection electrode

61, 62A, 62B) is suitable for achieving a high degree of vacuum in the enclosed space S that encloses. The higher the degree of vacuum in the sealed space S, the easier it is for the movable part to vibrate at a high frequency, and the sensitivity of the sensing device Y tends to improve, which is preferable from the viewpoint of improving the performance of the sensing device Y.

This method makes it easy to ensure the strength or ease of handling of the packaging wafer 201 before being bonded to the device wafer 100. This is because the packaging wafer 201 used in the bonding process (first bonding process) described above with reference to FIG. 18C does not have an opening penetrating the wafer 201. The through hole 82a to be formed in the packaging member 80 to expose the terminal portions (portions 31a to 31h) of the sensing device Y to the outside of the package is formed after the wafer level packaging is achieved (first and second bonding). After the processes are completed, the packaging wafer 201 is bonded to the device wafer 100 and is less likely to be damaged. Then, the packaging wafer 201 is processed (first packaging wafer processing process).

In this method, the packaged device X is appropriately thinned. A packaging wafer 201 (including a plurality of sections for forming the packaging member 80 in the manufactured packaged device X to be manufactured) provided for the bonding process (first bonding process) described above with reference to FIG. ) Is not the same as the thickness of the packaging member 80, and the packaging wafer 201 thicker than the packaging member 80 is used for the first bonding step. After wafer level packaging is achieved (after both the first and second bonding steps are completed), the packaging wafer 201 that is bonded to the device wafer 100 and is less likely to be damaged is processed. As a result, the packaging wafer 201 is thinned to a desired degree (first packaging wafer processing step). The packaging member 80 is derived from the thinned packaging wafer 201 in this way. In addition, the packaging wafer 205 (a plurality of sections for forming the packaging member 90 in the manufactured packaged device X to be manufactured) used in the bonding process (second bonding process) described above with reference to FIG. Is not the same as the thickness of the packaging member 90, and the packaging wafer 205 thicker than the packaging member 90 is subjected to the second bonding step. Then, after wafer level packaging is achieved, the packaging wafer 205 is bonded to the device wafer 100 and is less likely to be damaged. Is thinned. The packaging member 90 comes from the packaging wafer 205 thinned in this way. Therefore, this method is suitable for reducing the thickness of the packaged device X while ensuring the strength or ease of handling of the

packaging wafers

201 and 205 before being bonded to the device wafer 100.

Further, in this method, instead of performing the steps (c) and (d) in FIG. 15 before the joining step (first joining step) described above with reference to FIG. ) After bonding the packaging wafer 201 in the state shown in FIG. 15 to the device wafer 100 in the first bonding process, the process described above with reference to FIGS. 15C and 15D with respect to the packaging wafer 201. May be performed.

Claims

A micro movable element having a movable part and a terminal part, a first packaging member having a through hole at a position corresponding to the terminal part and joined to the micro movable element, and the first packaging member being opposite to each other And a second packaging member joined to the micro movable element on the side of the package, the method for manufacturing a packaged micro movable element,
A device wafer having a first surface and a second surface opposite to the first surface and including a plurality of micro movable element forming sections for forming the micro movable element, on the first surface side, the first surface side Bonding a first packaging wafer including a plurality of first packaging member forming sections for forming one packaging member and having a resistivity of 100 Ωcm or more;
A second bonding step of bonding a second packaging wafer including a plurality of second packaging member forming sections for forming the second packaging member to the second surface side of the device wafer;
A first packaging wafer processing step for forming the through hole in each first packaging member forming section;
Cutting the stacked structure including the device wafer, the first packaging wafer, and the second packaging wafer,
The packaged micro movable element manufacturing method, wherein at least one of the first joining step and the second joining step is performed by a room temperature joining method.
The packaged micro movable device manufacturing method according to claim 1, wherein, in the first packaging wafer processing step, the first packaging wafer is thinned in each first packaging member forming section.
3. The packaged micro movable device manufacturing method according to claim 2, wherein a recess is formed at a through hole forming portion in each first packaging member forming section of the first packaging wafer before or after the first bonding step.
The first packaging member forming section includes a first region and a second region including the through hole forming portion and its periphery, and the first packaging wafer processing step is different from the second region. A first step of forming the through-hole while thinning the second region by performing an isotropic etching process; and a second step of thinning the first region while further thinning the second region. The packaged micro movable device manufacturing method according to claim 3.
The recessed part which will be opposed to the said movable part of the said micro movable element is formed in each 1st packaging member formation division of the said 1st packaging wafer before the said 1st joining process. Packaged micro movable element manufacturing method.
The recessed part which will be opposed to the said movable part of the said micro movable element is formed in each 2nd packaging member formation division of the said 2nd packaging wafer before the said 2nd joining process. Packaged micro movable element manufacturing method.
2. The packaged micro movable device manufacturing method according to claim 1, wherein in the first packaging wafer processing step, at least an opening end of the through hole is formed in a shape that widens as the distance from the micro movable device increases.
The packaged micro movable device manufacturing method according to claim 1, wherein, in the first bonding step, the device wafer and the first packaging wafer are bonded via an insulating film.
The packaged micro movable element manufacturing method according to claim 1, wherein, in the second bonding step, the device wafer and the second packaging wafer are bonded via an insulating film.
The device wafer has a laminated structure including a first layer having the first surface, a second layer having the second surface, and an intermediate layer between the first and second layers. A process in which two bonding steps are performed before the first bonding step, and an etching process is performed on the second layer using a mask pattern provided on the second surface as a mask before the second bonding step. The packaged micro movable device manufacturing method according to claim 1, wherein the step is performed.
After the second bonding step and before the first bonding step, a processing step of performing an etching process on the first layer using a mask pattern provided on the first surface as a mask is performed. The packaged micro movable device manufacturing method according to claim 10.
The device wafer has a laminated structure including a first layer having the first surface, a second layer having the second surface, and an intermediate layer between the first and second layers. A process in which one bonding step is performed before the second bonding step, and an etching process is performed on the first layer using a mask pattern provided on the first surface as a mask before the first bonding step. The packaged micro movable device manufacturing method according to claim 1, wherein the step is performed.
After the first bonding step and before the second bonding step, a processing step of performing an etching process on the second layer using a mask pattern provided on the second surface as a mask is performed. The packaged micro movable device manufacturing method according to claim 12.
A micro movable element having a movable part and a terminal part;
A first packaging member having a through hole at a position corresponding to the terminal portion and having a resistivity of 100 Ωcm or more, joined to the micro movable element;
A second packaging member joined to the micro movable element on a side opposite to the first packaging member,
A packaged micro movable element, wherein at least one of the first and second packaging members and the micro movable element are joined at room temperature.
The packaged micro movable element according to claim 14, wherein the first packaging member includes a first part and a second part that is thinner than the first part, including a part where the through hole is formed and its periphery. .
15. The packaged micro movable device according to claim 14, wherein the first packaging member and / or the second packaging member has a concave portion at a location facing the movable portion of the micro movable device.
15. The packaged micro movable element according to claim 14, wherein at least an open end of the through hole has a shape that widens as the distance from the micro movable element increases.
15. The packaged micro movable device according to claim 14, wherein an insulating film is interposed between the micro movable device and the first packaging member and / or between the micro movable device and the second packaging member. element.
The micro movable element includes a fixed part and a connecting part for connecting the fixed part and the movable part in addition to the movable part, and the movable part is swingable. Packaged micro movable element.
The packaged micro movable element according to claim 19, wherein the micro movable element is an angular velocity sensor or an acceleration sensor.