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WO2009113375A1 - Film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium, phosphore sur nanoparticules de silicium, et procédé d'observation d'une seule molécule - Google Patents

Film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium, phosphore sur nanoparticules de silicium, et procédé d'observation d'une seule molécule Download PDF

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Publication number
WO2009113375A1
WO2009113375A1 PCT/JP2009/053003 JP2009053003W WO2009113375A1 WO 2009113375 A1 WO2009113375 A1 WO 2009113375A1 JP 2009053003 W JP2009053003 W JP 2009053003W WO 2009113375 A1 WO2009113375 A1 WO 2009113375A1
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Prior art keywords
nanoparticle phosphor
silicon nanoparticle
silicon
oxide film
silicon oxide
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PCT/JP2009/053003
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English (en)
Japanese (ja)
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一賀 午菴
繁郎 堀田
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コニカミノルタエムジー株式会社
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Publication of WO2009113375A1 publication Critical patent/WO2009113375A1/fr

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C09K11/592Chalcogenides
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/58Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances
    • G01N33/588Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

Definitions

  • the present invention relates to a silicon nanoparticle phosphor that can be suitably used as a nanoparticle phosphor, a silicon nanoparticle-containing silicon oxide film, and single molecule observation using the silicon nanoparticle phosphor as a biological material labeling agent. Regarding the method.
  • Recent detection equipment enhancements and labeling material enhancements have made it possible to detect single molecules, identify them, and observe movements, and play a major role in analytical chemistry, molecular biology, and analysis of nanostructures. Has been fulfilled.
  • Fluorescent dyes and nanoparticle phosphors have been proposed as labeling materials used for single molecule observation.
  • the nanoparticle phosphor can set the emission peak wavelength relatively freely in the range of about 400 to 2000 nm by selecting the size and material as compared with the fluorescent dye.
  • by taking a wide Stokes shift it is possible to reduce the influence of noise due to overlap with excitation light and background, and to improve the detection capability.
  • since there are very few fadings there are many advantages such as long-term dynamic observation.
  • quantum dot a substance that exhibits a quantum confinement effect in a nanometer-sized semiconductor substance.
  • a quantum dot is a small lump within about 10 and several nanometers in which several hundred to several thousand semiconductor atoms are gathered, but when absorbing energy from an excitation source and reaching an energy excited state, the energy of the quantum dot Releases energy corresponding to the band gap. Therefore, it is considered that by adjusting the size or material composition of the quantum dots, the energy band gap can be adjusted, and energy in various levels of wavelength bands can be used.
  • quantum dots have a crystal structure and the property that the band gap changes depending on the particle size, and the emission wavelength changes as the band gap changes. It leads to variation. In order to avoid this, there is a fundamental problem such as complicated operations such as classifying particles of a single spectrum.
  • the size of the semiconductor nanoparticle phosphor actually used is about 1 to 10 nm, but its size and mass are larger than that of the fluorescent dye, so that it is used as a biological material labeling agent for cells of 10 to 100 ⁇ m. Furthermore, from the viewpoint of ecological imaging, it is considered that there is a problem that the obstacle to cells affects the imaging behavior.
  • An object of the present invention is to improve the biomarker recognition rate by using a silicon nanoparticle phosphor with little variation in emission wavelength and emission intensity, and using the silicon nanoparticle phosphor.
  • the product nd of the thickness ( ⁇ m) d of the silicon nanoparticle phosphor-containing silicon oxide film and the refractive index n is 3 or more and 10 or less.
  • the silicon nanoparticle fluorescent substance containing silicon oxide film characterized by the above-mentioned.
  • a silicon nanoparticle phosphor with little variation in emission wavelength and emission intensity was obtained, and the biomarker recognition rate could be improved by using the silicon nanoparticle phosphor.
  • the present invention is characterized in that, in a silicon nanoparticle phosphor-containing silicon oxide film formed on a semiconductor substrate, the product nd of the film thickness ( ⁇ m) d and the refractive index n is 3 or more and 10 or less. To do.
  • the silicon nanoparticle phosphor-containing silicon oxide film of the present invention can be obtained by heat-treating (annealing) an amorphous silicon oxide film formed on a semiconductor substrate in an inert gas (such as argon).
  • a silicon substrate is mainly used as a semiconductor substrate.
  • the amorphous silicon oxide film is formed by, for example, a high-speed sputtering method (for example, Japanese Patent Application Laid-Open No. 2004-296781).
  • the heat treatment temperature is 900 to 1200 ° C., preferably 1000 to 1100 ° C., and the heat treatment time is 15 to 100 minutes, preferably 30 to 80 minutes, more preferably 50 to 60 minutes.
  • forming an amorphous silicon oxide film on a semiconductor substrate is (1) vaporizing the opposing raw material semiconductor by the first high-temperature plasma generated between the electrodes, and generating it by electrodeless discharge in a reduced pressure atmosphere. It is also possible to pass through the second high-temperature plasma (for example, JP-A-6-279015), (2) laser ablation method (for example, JP-A-2004-356163).
  • the second high-temperature plasma for example, JP-A-6-279015
  • laser ablation method for example, JP-A-2004-356163
  • argon gas is introduced into a vacuum chamber, the argon gas is ionized, and the ionized argon ions are converted into a silicon chip and quartz glass (a silicon chip on quartz glass at a predetermined interval on the quartz glass).
  • the atoms and molecules emitted from the target material are deposited on the semiconductor substrate to form an amorphous silicon oxide (SiO x ) film.
  • Examples of the target material in the high-speed sputtering method include silicon chip and quartz glass. By controlling the area ratio of the silicon chip and quartz glass, silicon nanoparticle phosphors having various particle sizes can be obtained.
  • the area ratio between the silicon chip and the quartz glass is in the range of 1 to 50%.
  • the particle size can also be controlled by changing the high-frequency power and gas pressure, which are sputtering conditions.
  • the high frequency power is 10 to 500 W
  • the gas pressure is 1.33 ⁇ 10 ⁇ 2 to 1.33 ⁇ 10 Pa.
  • the product nd of the film thickness ( ⁇ m) d and the refractive index n of the silicon oxide film containing the silicon nanoparticle phosphor formed on the semiconductor substrate is controlled to be 3 or more and 10 or less, It is preferably controlled to 3 or more and 7 or less, particularly preferably 3.5 or more and 5 or less.
  • Nd control can take any means. n may be controlled or d may be controlled, and of course, it is preferable to control them simultaneously.
  • n may be controlled or d may be controlled, and of course, it is preferable to control them simultaneously.
  • n in the high-speed sputtering method, from the viewpoint of controlling n, it is effective to control the amount of silicon chip on the target in the high-speed sputtering apparatus, the internal pressure of an inert gas such as argon, the magnetic flux density, and the temperature and time of heat treatment It is.
  • d it is effective to control the sputtering time and change the distance between the target and the semiconductor substrate.
  • the product nd of refractive index and film thickness of the obtained silicon nanoparticle phosphor-containing silicon oxide film is directly obtained by measuring with a Fourier transform infrared spectrophotometer (FT / IR-6100, manufactured by JASCO Corporation). be able to.
  • FT / IR-6100 Fourier transform infrared spectrophotometer
  • the silicon nanoparticle phosphor in the silicon oxide film of the present invention can be isolated by hydrofluoric acid treatment of the silicon oxide film.
  • the average particle diameter of the silicon nanoparticle phosphor of the present invention is 1 nm or more and 10 nm or less. Preferably they are 3 nm or more and 8 nm or less, Especially preferably, they are 3.5 nm or more and 7 nm or less.
  • the average particle size of the silicon nanoparticle phosphor needs to be determined three-dimensionally, but it is difficult because it is too fine, and in reality it must be evaluated with a two-dimensional image. (TEM) is preferably obtained by changing the shooting scene of the electron micrograph and shooting and averaging.
  • the average particle diameter is obtained by taking an electron micrograph using a TEM, measuring the cross-sectional area of a sufficient number of particles, and measuring the diameter when the measured value is the area of a corresponding circle. Obtained as the diameter, the arithmetic average was taken as the average particle diameter.
  • the number of cluster particles photographed with a TEM is preferably 100 or more, and more preferably 1000 particles.
  • the arithmetic average of 1000 particles is defined as the average particle size.
  • the silicon nanoparticle phosphor of the present invention can be applied to single molecule analysis in various technical fields.
  • the silicon nanoparticle phosphor of the present invention can be applied to single molecule analysis in various technical fields as a biological material labeling agent. That is, the present invention can be used in a single molecule observation method mainly for identifying molecules by irradiating molecules labeled with a silicon nanoparticle phosphor with excitation light and detecting luminescence.
  • the light source of the excitation light is not limited as long as it satisfies the desired wavelength and intensity conditions.
  • various lamps such as a high pressure mercury lamp, a low pressure mercury lamp, an ultrahigh pressure mercury lamp, a metal halide lamp, an Ar laser, a Kr laser, and a He—
  • Various lasers such as a Ne laser and various LEDs can be used.
  • the wavelength of the excitation light depends on the kind of nanoparticles and the particle size, but usually 200 to 1000 nm is used.
  • the single molecule observation method it is also possible to simultaneously identify multiple types of molecules by labeling multiple types of molecules with semiconductor nanoparticles having different emission spectra and irradiating the molecules with excitation light.
  • the applicable types of molecules include structural isomers having the same chemical composition but different chemical structures.
  • the single molecule observation method includes a step of adhering a silicon nanoparticle phosphor to a cell by light irradiation, a step of washing and removing unreacted silicon nanoparticle phosphor, and a cell labeled with a silicon nanoparticle phosphor. It consists of a step of irradiating excitation light to detect luminescence, and a step of separating the silicon nanoparticle phosphor from the cells by light irradiation. By repeating these steps, cell dynamics can be observed.
  • the silicon nanoparticle phosphor of the present invention can be applied to a biological material labeling agent as described above. Further, by adding a biological substance labeling agent to living cells or living bodies having a target (tracking) substance, the target substance is bound or adsorbed, and the conjugate or adsorbent is irradiated with excitation light of a predetermined wavelength, By detecting fluorescence of a predetermined wavelength generated from the fluorescent semiconductor fine particles according to the excitation light, fluorescence dynamic imaging of the target (tracking) substance can be performed.
  • the biological material labeling agent according to the present invention can be used for a bioimaging method (technical means for visualizing biological molecules constituting the biological material and dynamic phenomena thereof).
  • the above-described silicon nanoparticle phosphor surface is generally hydrophobic, for example, when used as a biological material labeling agent, there are problems such as poor water dispersibility and aggregation of particles. Therefore, it is preferable to hydrophilize the surface of the silicon nanoparticle phosphor.
  • hydrophilization treatment for example, there is a method of chemically and / or physically binding a surface modifier to the particle surface after removing the lipophilic group on the surface with pyridine or the like.
  • a surface modifier those having a carboxyl group or an amino group as hydrophilic groups are preferably used, and specific examples include mercaptopropionic acid, mercaptoundecanoic acid, aminopropanethiol and the like.
  • the biological material labeling agent according to the present invention is obtained by bonding the above-described hydrophilic silicon nanoparticle phosphor and the molecular labeling substance via an organic molecule.
  • the biological substance labeling agent according to the present invention can label a biological substance by specifically binding and / or reacting with the target biological substance.
  • the molecular labeling substance include nucleotides, antibodies, antigens, and cyclodextrins.
  • the organic molecule is not particularly limited as long as it is an organic molecule that can bind the silicon nanoparticle phosphor and the molecular labeling substance.
  • the form of the bond is not particularly limited, and examples thereof include covalent bond, ionic bond, hydrogen bond, coordinate bond, physical adsorption, and chemical adsorption.
  • a bond having a strong bonding force such as a covalent bond is preferable from the viewpoint of bond stability.
  • the silicon nanoparticle phosphor is hydrophilized with mercaptoundecanoic acid
  • avidin and biotin can be used as organic molecules.
  • the carboxyl group of the silicon nanoparticle subjected to the hydrophilization treatment is preferably covalently bonded to avidin
  • the avidin is further selectively bonded to biotin
  • biotin is further bonded to the molecular labeling substance to thereby label the biological material. It becomes.
  • Example 1 ⁇ Production of silicon nanoparticle phosphor-containing silicon oxide film> (Formation of amorphous silicon oxide film by high-speed sputtering)
  • a high-frequency sputtering apparatus is shown in FIG.
  • This apparatus generally includes a vacuum chamber 16 having an argon gas introduction port 14 and an exhaust port 15 at the lower part of the side surface, and a cooling water 19 that is attached to the upper surface of the vacuum chamber 16 via an insulating material 17 and introduced and discharged from a cooling pipe 18.
  • a high-frequency electrode 22 having a cathode shield 21 attached to the lower surface of the vacuum chamber 16 via an insulating material 17 and cooled by cooling water 19 introduced and discharged from the cooling pipe 18. ing.
  • the argon gas is introduced into the vacuum chamber 16 from the argon gas inlet 14 and the argon gas is ionized by the high frequency controller 23 while keeping the argon gas pressure constant, and the ionized argon ions are converted into the high frequency electrode.
  • the target material 24 on 22 is made to collide with the silicon chip 24a and the quartz glass 24b.
  • silicon atoms and silicon oxide molecules released from the target material 24 are deposited on the semiconductor substrate 1 held by the substrate holder 20 to form an amorphous silicon oxide film mixed with silicon atoms.
  • the area ratio between the silicon chip and the quartz glass and the sputtering time are adjusted.
  • the argon gas pressure was 0.3 Pa and the high frequency power was 200 W.
  • the obtained amorphous silicon oxide film is rapidly heated to 1100 ° C. in an argon atmosphere and subjected to heat treatment for the heat treatment time shown in Table 1 to agglomerate silicon atoms in the film to nano size, thereby producing a silicon nanoparticle phosphor. To form.
  • the obtained silicon nanoparticle phosphor-containing silicon oxide film is subjected to surface treatment by exposing it to 40 ° C. hydrofluoric acid vapor. Thereafter, the film surface was washed by exposure to water vapor, left in an air atmosphere for 1 hour, and then placed in ethanol for ultrasonic treatment for 10 minutes.
  • the emission spectrum of each particle was observed using a near-field light scanning optical microscope when excited at a wavelength of 280 nm.
  • Table 2 shows the half width of the emission spectrum, the maximum emission wavelength, and the relative emission intensity. The relative emission intensity was determined by setting Sample 1 to 100.
  • the silicon nanoparticle phosphor of the present invention has a small FWHM and a standard deviation of emission intensity for each particle and a small variation. From this, it can be said that the silicon nanoparticle phosphor of the present invention is excellent as a biological material labeling agent for single molecule observation.
  • Example 2 1 ⁇ 10 ⁇ 5 g of the obtained silicon nanoparticle phosphor is redispersed in 10 ml pure water in which 0.2 g of mercaptoundecanoic acid is dissolved, and the surface is hydrophilized by stirring at 40 ° C. for 10 minutes. Thereafter, 25 mg of avidin was added to each of the aqueous solutions of these semiconductor nanoparticles, and the mixture was stirred at 40 ° C. for 10 minutes to produce avidin-conjugated nanoparticles.
  • the target protein in the cell is biotinylated and the avidin-conjugated nanoparticles are dropped and washed on the immobilized chip, one avidin-conjugated nanoparticle binds to the biotin bound to the target protein, and the spot Emits light of the color caused by the silicon nanoparticle phosphor upon ultraviolet irradiation. For 100 spots, the number of emitted spots is counted, and the ratio is shown in Table 3 as the biomarker recognition rate.

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  • Life Sciences & Earth Sciences (AREA)
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Abstract

L'invention concerne un film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium sans variation significative de longueur d'onde de luminescence et d'intensité de luminescence. L'utilisation du phosphore sur nanoparticules de silicium permet d'améliorer le taux de reconnaissance de marqueur biologique. On obtient le phosphore sur nanoparticules de silicium en traitant un film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium avec de l'acide fluorhydrique. On place le film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium sur un substrat semi-conducteur et le film est caractérisé en ce que le produit (nd) de l'épaisseur du film (d) (μm) et de l'indice de réfraction (n) du film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium est supérieur ou égal à 3 et ne dépasse pas 10.
PCT/JP2009/053003 2008-03-14 2009-02-20 Film d'oxyde de silicium contenant du phosphore sur nanoparticules de silicium, phosphore sur nanoparticules de silicium, et procédé d'observation d'une seule molécule WO2009113375A1 (fr)

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JP2008-065540 2008-03-14
JP2008065540 2008-03-14

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065308A1 (fr) * 2009-11-27 2011-06-03 国立大学法人 京都大学 Sonde fluorescente
JP2013095850A (ja) * 2011-11-01 2013-05-20 National Institute For Materials Science ゲルマニウムナノ粒子蛍光体及びその製造方法
JP2014519361A (ja) * 2011-04-28 2014-08-14 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Si含有粒子を用いた時間ゲート蛍光イメージング

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JPS6323328A (ja) * 1985-12-02 1988-01-30 Texas Instr Japan Ltd 酸化シリコン膜の製造方法
JPH07237995A (ja) * 1994-02-28 1995-09-12 Rikagaku Kenkyusho 超微結晶シリコン発光材料、その製造方法、超微結晶シリコン発光材料を用いた素子およびその製造方法
JP2005268337A (ja) * 2004-03-16 2005-09-29 Tokai Univ ナノシリコン発光素子の製造法及びそのナノシリコン発光素子
JP2006059950A (ja) * 2004-08-19 2006-03-02 Atomic Energy Council-Inst Of Nuclear Energy Research 赤色光発光素子とその製造方法
JP2006214004A (ja) * 2005-02-01 2006-08-17 Sharp Corp エレクトロルミネセンスへの応用を目的とし、シリコン過剰酸化物からシリコンナノ粒子をdc反応性スパッタリングによって形成する方法
JP2006236997A (ja) * 2005-02-24 2006-09-07 Sharp Corp 発光デバイスおよびその製造方法
WO2006125313A1 (fr) * 2005-05-27 2006-11-30 The Governors Of The University Of Alberta Procedes de preparation de silicium nanocristallin dans du sio2 et de nanoparticules de silicium autonomes
JP2007067104A (ja) * 2005-08-30 2007-03-15 Tokyo Denki Univ 高輝度・低駆動電圧型ナノシリコン発光素子とその製造方法
WO2007086198A1 (fr) * 2006-01-27 2007-08-02 Konica Minolta Medical & Graphic, Inc. Nanoparticules de phosphore semiconductrices

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323328A (ja) * 1985-12-02 1988-01-30 Texas Instr Japan Ltd 酸化シリコン膜の製造方法
JPH07237995A (ja) * 1994-02-28 1995-09-12 Rikagaku Kenkyusho 超微結晶シリコン発光材料、その製造方法、超微結晶シリコン発光材料を用いた素子およびその製造方法
JP2005268337A (ja) * 2004-03-16 2005-09-29 Tokai Univ ナノシリコン発光素子の製造法及びそのナノシリコン発光素子
JP2006059950A (ja) * 2004-08-19 2006-03-02 Atomic Energy Council-Inst Of Nuclear Energy Research 赤色光発光素子とその製造方法
JP2006214004A (ja) * 2005-02-01 2006-08-17 Sharp Corp エレクトロルミネセンスへの応用を目的とし、シリコン過剰酸化物からシリコンナノ粒子をdc反応性スパッタリングによって形成する方法
JP2006236997A (ja) * 2005-02-24 2006-09-07 Sharp Corp 発光デバイスおよびその製造方法
WO2006125313A1 (fr) * 2005-05-27 2006-11-30 The Governors Of The University Of Alberta Procedes de preparation de silicium nanocristallin dans du sio2 et de nanoparticules de silicium autonomes
JP2007067104A (ja) * 2005-08-30 2007-03-15 Tokyo Denki Univ 高輝度・低駆動電圧型ナノシリコン発光素子とその製造方法
WO2007086198A1 (fr) * 2006-01-27 2007-08-02 Konica Minolta Medical & Graphic, Inc. Nanoparticules de phosphore semiconductrices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065308A1 (fr) * 2009-11-27 2011-06-03 国立大学法人 京都大学 Sonde fluorescente
JP2014519361A (ja) * 2011-04-28 2014-08-14 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Si含有粒子を用いた時間ゲート蛍光イメージング
JP2013095850A (ja) * 2011-11-01 2013-05-20 National Institute For Materials Science ゲルマニウムナノ粒子蛍光体及びその製造方法

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