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WO2009111668A2 - Utilisation de dopants de différents coefficients de diffusion pour la fabrication de cellules solaires - Google Patents

Utilisation de dopants de différents coefficients de diffusion pour la fabrication de cellules solaires Download PDF

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Publication number
WO2009111668A2
WO2009111668A2 PCT/US2009/036238 US2009036238W WO2009111668A2 WO 2009111668 A2 WO2009111668 A2 WO 2009111668A2 US 2009036238 W US2009036238 W US 2009036238W WO 2009111668 A2 WO2009111668 A2 WO 2009111668A2
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WIPO (PCT)
Prior art keywords
dopant
dopants
solar cell
substrate
arsenic
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PCT/US2009/036238
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English (en)
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WO2009111668A9 (fr
WO2009111668A3 (fr
Inventor
Nicholas P.T. Bateman
Atul Gupta
Christopher R. Hatem
Deepak Ramappa
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Varian Semiconductor Equipment Associates
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Publication of WO2009111668A2 publication Critical patent/WO2009111668A2/fr
Publication of WO2009111668A3 publication Critical patent/WO2009111668A3/fr
Publication of WO2009111668A9 publication Critical patent/WO2009111668A9/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This invention relates to dopant profiles, and, more particularly, to dopant profiles in solar cells.
  • Ion implantation is a standard technique for introducing conductivity-altering impurities into semiconductor substrates.
  • a desired impurity material is ionized in an ion source, the ions are accelerated to form an ion beam of prescribed energy, and the ion beam is directed at the surface of the substrate.
  • the energetic ions in the beam penetrate into the bulk of the semiconductor material and are embedded into the crystalline lattice of the semiconductor material to form a region of desired conductivity.
  • Solar cells are typically manufactured using the same processes used for other semiconductor devices, often using silicon as the substrate material.
  • a semiconductor solar cell is a simple device having an in-built electric field that separates the charge carriers generated through the absorption of photons in the semiconductor material. This electric field is typically created through the formation of a p-n junction (diode) , which is created by differential doping of the semiconductor material. Doping a part of the semiconductor substrate (e.g. surface region) with impurities of opposite polarity forms a p-n junction that may be used as a photovoltaic device converting light into electricity.
  • Figure 3 shows a first embodiment of a solar cell, and is a cross section of a representative substrate 300.
  • Photons 301 enter the solar cell 300 through the top surface 305, as signified by the arrows. These photons pass through an anti- reflective coating 310, designed to maximize the number of photons that penetrate the substrate 300 and minimize those that are reflected away from the substrate.
  • the substrate 300 is formed so as to have a p-n junction 320.
  • This junction is shown as being substantially parallel to the top surface 305 of the substrate 300 although there are other implementations where the junction may not be parallel to the surface.
  • the solar cell is fabricated such that the photons enter the substrate through a heavily doped region, also known as the emitter 330. In some embodiments, the emitter
  • the emitter may be a p-type doped region.
  • the photons with sufficient energy are able to promote an electron within the semiconductor material's valence band to the conduction band. Associated with this free electron is a corresponding positively charged hole in the valence band.
  • these electron hole (e-h) pairs need to be separated. This is done through the built-in electric field at the p-n junction. Thus any e-h pairs that are generated in the depletion region of the p-n junction get separated, as are any other minority carriers that diffuse to the depletion region of the device.
  • the emitter region 130 be very shallow. Some photons pass through the emitter region 330 and enter the base 340. In the scenario where the emitter 330 is an n-type region, the base 340 is a p-type doped region. These photons can then excite electrons within the base 340, which are free to move into the emitter region 330, while the associated holes remain in the base 340.
  • the base is an n-type doped region.
  • these photons can then excite electrons within the base 340, which remain in the base region 340, while the associated holes move into the emitter 330.
  • the extra carriers (electrons and holes) generated by the photons can then be used to drive an external load to complete the circuit.
  • contacts 350 typically metallic, are placed on the outer surface of the emitter region and the base. Since the base does not receive the photons directly, typically its contact 350b is placed along the entire outer surface. In contrast, the outer surface of the emitter region 330 receives photons and therefore cannot be completely covered with contacts. However, if the electrons have to travel great distances to the contact, the series resistance of the cell increases, which lowers the power output. In an attempt to balance these two considerations (the distance that the free electrons must travel to the contact, and the amount of exposed emitter surface 360) most applications use contacts 350a that are in the form of fingers.
  • Figure 4 shows a top view of the solar cell of Figure 3.
  • the contacts are typically formed so as to be relatively thin, while extending the width of the solar cell. In this way, free electrons need not travel great distances, but much of the outer surface of the emitter is exposed to the photons.
  • Typical contact fingers 350a on the front side of the substrate are 0.1 mm with an accuracy of +/- 0.1mm. These fingers 350a are typically spaced between 1-5 mm apart from one another. While these dimensions are typical, other dimensions are possible and contemplated herein.
  • FIG. 5 shows a cross section of this enhanced solar cell.
  • the cell is as described above in connection with Figure 3, but includes heavily doped contact regions 370.
  • These heavily doped contact regions 370 correspond to the areas where the metallic fingers 350a will be affixed to the substrate 300.
  • the introduction of these heavily doped contact regions 370 allows much better contact between the substrate 300 and the metallic fingers 350a and significantly lowers the series resistance of the cell.
  • This pattern of including heavily doped regions on the surface of the substrate is commonly referred to as selective emitter design.
  • a selective emitter design for a solar cell also has the advantage of higher efficiency cells due to reduced minority carrier losses through recombination due to lower dopant/impurity dose in the exposed regions of the emitter layer.
  • the higher doping under the contact regions provides a field that repels the minority carriers generated in the emitter and pushes them towards the p-n junction.
  • FIG. 3 requires contacts on both sides of the substrate, thereby reducing the available area of the front surface through which photons may pass.
  • a cross section of a second embodiment of a solar cell 400 is shown in FIG. 6. Fundamentally, the physics of this embodiment is similar, in which a p-n junction is used to create an electric
  • the junctions are only created in portions of the substrate 400.
  • a negatively doped silicon substrate 410 is used.
  • a more negatively biased front surface field (FSF) 420 is created by implanting addition n-type dopants in the front surface. This front surface is then coated with an anti-reflective material 430. This front surface is often etched to create a sawtooth or other non-planar surface, so as to increase surface area.
  • FSF front surface field
  • Certain portions of the bottom surface are implanted with p-type dopants to create emitters 440. Other portions are implanted with n-type dopants to create more negatively biased back surface field 450.
  • the back surface is coated with a dielectric layer 460 to enhance the reflectivity of the back surface.
  • Metal fingers 470a are attached to the emitter 440 and fingers
  • FIG. 7 shows one commonly used configuration of the metal fingers on the back surface. This type of cell is known as an interdigitated back contact (IBC) solar cell.
  • IBC interdigitated back contact
  • the dopant profile of the substrate can be tailored as required. For example, in the case of solar cells, it may be advantageous to have a greater dopant concentration near the surface of the substrate, while still establishing a deep moderately doped region.
  • the dopants may be introduced simultaneously, partially simultaneously or sequentially.
  • Dopant pairs may consist of two species of differing diffusivity. In some embodiments, the dopant pairs may consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
  • FIG. 1 is a set of graphs showing dopant distribution profiles for phosphorus and arsenic before and after anneal;
  • FIG. 2 is a graph comparing dopant concentration versus dopant depth for arsenic and phosphorus
  • FIG. 3 shows a cross section of a solar cell of the prior art
  • FIG. 4 shows a top view of the solar cell of Figure 3
  • FIG. 5 shows a cross section of a solar cell using selective emitter design
  • FIG. 6 shows a cross section of a second type of solar cell of the prior art
  • FIG. 7 shows a bottom view of the solar cell of Figure 6.
  • the embodiments of the process described herein may be performed by, for example, a beam-line ion implanter or a plasma doping ion implanter.
  • a plasma doping ion implanter may use RF or other plasma generation sources.
  • Other plasma processing equipment or equipment that generates ions also may be used.
  • Thermal or furnace diffusion, pastes on the surface of the solar cell substrate that are heated, epitaxial growth, or laser doping also may be used to perform embodiments of the process described herein.
  • a silicon solar cell is specifically disclosed, other solar cell substrate materials also may benefit from embodiments of the process described herein.
  • One way to repel minority carriers is to put a shallow, high concentration layer of dopant at the surface of the solar cell. This layer needs to remain in place throughout any subsequent thermal processing. However, previous methods would diffuse this dopant layer throughout the emitter, reducing its effectiveness.
  • One example of such a solar cell criteria is a p-n junction. Efficiency is enhanced if the p-n junction is located deep within the substrate, away from the surface of the substrate. The presence of a deep dopant profile also may lower series resistance of the solar cell. This deeper dopant concentration has been previously performed using a high- diffusivity dopant. Such a high-diffusivity dopant may not allow high concentration of the dopant at the surface of the cell without introducing an excessive number of dopant atoms into the silicon, thereby increasing recombination.
  • dopant profiles may be tailored or the thermal steps required to manufacture a solar cell may be minimized. The number of overall thermal steps required also may be reduced. Furthermore, using dopants with different diffusivities may allow both a high surface concentration of a dopant and a high concentration of a dopant deeper in the solar cell, while having the same conductivity throughout the implanted region.
  • FIG. 1 is a set of graphs showing representative dopant distribution profiles for phosphorus and arsenic.
  • phosphorus is implanted
  • arsenic is implanted.
  • FIG. 1C the phosphorus dopant distribution 100 and the arsenic dopant distribution 101 change after the anneal, with each diffusing to greater depths.
  • At least two different dopants are introduced into the silicon matrix of the solar cell.
  • Solar manufacturing has not previously used the different diffusion properties of two or more different dopants to tailor dopant profiles or to optimize solar cell performance.
  • Current solar cell manufacturing methods use only a single dopant.
  • a first dopant species may have a high diffusivity and will diffuse relatively extensively during thermal processing.
  • the second dopant species may have a similar conductivity and may have a lower diffusivity and will diffuse substantially less than the first dopant species during thermal processing.
  • Examples of pairs of n-type dopants are phosphorus and arsenic, phosphorus and antimony, phosphorus and bismuth, and nitrogen, in conjunction with any of the above mentioned dopants.
  • Example of a pairs of p-type dopants are boron and gallium, boron and indium, and boron and aluminum. Other dopant species may be used and this process is not solely limited to the dopants disclosed herein.
  • the first dopant in the silicon matrix limits the diffusivity of the second dopant by competing for interstitial or substitutional sites in the crystal lattice. This may result in the second dopant diffusing less than the first dopant.
  • more than two dopants are used to tailor the dopant profile in the solar cell.
  • the first dopant will diffuse more than the second dopant.
  • This enables flexibility in tailoring a dopant profile in a solar cell. For example, using a first and second dopant with different diffusivities may allow charge collection, series resistance, or other solar cell parameters to be optimized.
  • the first dopant may form a deep pn-junction and the second dopant may provide a high dopant concentration at the surface of the solar cell. This may enable various contact designs and may reduce recombination at the surface of the solar cell. Such a configuration also increases charge collection (by minimizing surface recombination) and lowers series resistance.
  • the first and second dopants are introduced using ion implantation.
  • a patterned or non-patterned implant may be performed.
  • a patterned implant may use a hard mask or a stencil mask, for example.
  • These two dopants may be introduced at least partially simultaneously using a cluster or molecular implant or by using one or more gases with a tool with no mass separation, such as a plasma doping tool, or a tool that performs a flood implant.
  • a single gas containing both species can be ionized.
  • molecules such as, but not limited to, AsP (arsenic monophosphide) , AS 2 P 2 (diarsenic diphosphide) , As 3 P (Triarsenic phosphide), and AsP 3 (arsenic triphosphide) may be used for a molecular implant. Implantation of the four enumerated molecules will result in atomic arsenic ions, and atomic phosphorus ions, where each has a different diffusion rate.
  • two different gaseous species can be ionized simultaneously, such as boron and gallium, or phosphorus and arsenic, yielding ions from each species, which are then at least partially simultaneously implanted.
  • the two dopant species will either have similar depth profiles due to the implant parameters, or they will have dopant profiles where the heavier dopant species has a shallower profile than the lighter dopant species due to the larger size of the heavier dopant species. If the heavier dopant species has a lower diffusivity, such as with arsenic (as compared with phosphorus), the lighter dopant species will have a deeper as- implanted profile and the heavier dopant species will have a shallower as-implanted profile.
  • a flood implant is used where the ions are not mass analyzed.
  • Both atomic dopant species and molecular dopant species are accelerated.
  • ionized AsP molecules and atomic phosphorus can both be implanted.
  • the atomic phosphorus atoms would diffuse deepest.
  • Phosphorus atoms from the ionized molecule would be somewhat shallower.
  • the arsenic atoms from the ionized molecule would be much shallower. Therefore, the atomic dopant species may have a deeper as-implanted dopant profile than the molecular dopant species.
  • the two dopants also may be introduced using a chained implant where one dopant is implanted prior to the other dopant.
  • the lighter dopant such as phosphorus or boron
  • the heavier dopant such as arsenic or gallium
  • the heavier dopant is likely to be shallower in its diffusion.
  • the earlier implanted ions may occupy some of the available interstitial locations, further limiting the ability of the second implanted species to diffuse deep into the substrate .
  • the heavier dopant can be implanted first (such as As) so as enable amorphization of the substrate over the implanted depth.
  • the lighter dopant such as phosphorous is then implanted. Due to the amorphized substrate, the lighter dopant diffusion is reduced. Following an anneal a more abrupt profile of the lighter dopant can be obtained, which can be beneficial in certain aspects of the cell.
  • the substrate is annealed after the dopants are introduced into the substrate to activate the dopants and remove any damage to the lattice of the substrate.
  • the diffusion profile of the arsenic 101 will be much less than the diffusion profile of the phosphorus 100.
  • the surface peak dopant profile may be maintained using the arsenic 101 while the deeper dopant profile may be accomplished using the phosphorus 100.
  • Two dopants also may be introduced using furnace diffusion.
  • a single gas that contains both dopants such as those enumerated above, may be introduced during at least one process step.
  • two or more gases that each contains one dopant may be introduced in at least one process step.
  • the high-diffusivity dopant such as phosphorus or boron
  • the low-diffusivity dopant such as arsenic or gallium, will remain near the surface of the solar cell.
  • one of the two dopant gases may be introduced after one dopant gas has already at least partly diffused into the silicon of the solar cell or after the diffusion of one dopant gas is complete.
  • At least one paste is used to obtain the desired dopant profile in the solar cell.
  • the paste is applied before the antireflective coating has been applied.
  • paste is applied after the antireflective coating has been applied. Therefore, when paste is applied to the surface of the solar cell, in some embodiments, the paste is applied directly to the substrate, while in other embodiments, the paste is applied to the antireflective coating. In some embodiments, the paste is applied on top of the coating and fired. The heat allows the paste to eat through the coating and reach the substrate, which it diffuses into.
  • the solar cell substrate is coated with the at least one paste that contains one or both dopants. In some embodiments, a paste containing two or more dopants is used.
  • each paste contains only a single dopant and at least two pastes are used.
  • the heating process may be repeated to apply the second paste containing a second dopant.
  • one dopant is introduced by ion implantation and the second dopant is introduced by diffusion while the damage caused by implanting the first dopant is annealed.
  • This may form a retrograde or a flat dopant profile for the dopant introduced by ion implantation and a surface- peaked dopant profile for the diffused dopant.
  • the higher- diffusivity dopant would form a deeper dopant profile than the lower-diffusivity dopant in this embodiment.
  • the selection of which dopant is introduced by ion implantation and which dopant is introduced by diffusion is application specific. Similarly, the order in which the dopants are introduced can also be varied.
  • FIG. 2 is a graph comparing dopant concentration versus dopant depth for arsenic and phosphorus. This graph may correspond to a secondary ion mass spectrometry (SIMS) profile. As seen in FIG. 2, the arsenic 200 retains a shallow profile while the phosphorus 201 diffuses deeply into the silicon.
  • SIMS secondary ion mass spectrometry
  • the parameters of the anneal are configured to further tailor the dopant profile using at least two dopant species.

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Abstract

L’invention concerne un procédé d’adaptation du profil du dopant d’un substrat en utilisant deux dopants différents, chacun ayant un coefficient de diffusion différent. Le substrat peut être, par exemple, une cellule solaire. En introduisant deux dopants différents, comme par implantation ionique, diffusion en four ou collage, il est possible de créer le profil du dopant souhaité. De plus, les dopants peuvent être introduits simultanément, partiellement simultanément ou séquentiellement. Les paires de dopant se composent de préférence d’une espèce plus légère et d’une espèce plus lourde, l’espèce plus légère ayant un coefficient de diffusion plus élevé. Par exemple, on peut utiliser les paires de dopant telles que le bore et le gallium, le bore et l’indium, le phosphore et l’arsenic, et le phosphore et l’antimoine.
PCT/US2009/036238 2008-03-05 2009-03-05 Utilisation de dopants de différents coefficients de diffusion pour la fabrication de cellules solaires WO2009111668A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3387308P 2008-03-05 2008-03-05
US61/033,873 2008-03-05
US9501008P 2008-09-08 2008-09-08
US61/095,010 2008-09-08
US12/397,542 US8461032B2 (en) 2008-03-05 2009-03-04 Use of dopants with different diffusivities for solar cell manufacture
US12/397,542 2009-03-04

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US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method

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US8203433B2 (en) * 2006-05-04 2012-06-19 Intermec Ip Corp. Method for commissioning an RFID network
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
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US20090227097A1 (en) 2009-09-10

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