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WO2009111666A3 - Contredopage de cellules solaires - Google Patents

Contredopage de cellules solaires Download PDF

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Publication number
WO2009111666A3
WO2009111666A3 PCT/US2009/036235 US2009036235W WO2009111666A3 WO 2009111666 A3 WO2009111666 A3 WO 2009111666A3 US 2009036235 W US2009036235 W US 2009036235W WO 2009111666 A3 WO2009111666 A3 WO 2009111666A3
Authority
WO
WIPO (PCT)
Prior art keywords
counterdoping
doping
solar cell
conductivity
doped
Prior art date
Application number
PCT/US2009/036235
Other languages
English (en)
Other versions
WO2009111666A2 (fr
Inventor
Nicholas P. T. Bateman
Paul Sullivan
Atul Gupta
Original Assignee
Varian Semiconductor Equipment Associates
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates filed Critical Varian Semiconductor Equipment Associates
Priority to CN2009801134157A priority Critical patent/CN102007601A/zh
Priority to EP09717975A priority patent/EP2248185A2/fr
Priority to JP2010549896A priority patent/JP2011513998A/ja
Publication of WO2009111666A2 publication Critical patent/WO2009111666A2/fr
Publication of WO2009111666A3 publication Critical patent/WO2009111666A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne des procédés de contredopage d’une cellule solaire, particulièrement d’une cellule solaire IBC. Certaines parties d’une surface d’une cellule solaire peuvent nécessiter un dopage n, tandis que d’autres parties peuvent nécessiter un dopage p. Traditionnellement, une pluralité d’étapes de lithographie et de dopage est nécessaire pour obtenir cette configuration souhaitée. En revanche, une étape de lithographie peut être éliminée par l’utilisation d’un dopage de protection d’une conductivité et d’un procédé de contredopage avec motif de masque de la conductivité opposée. Les zones bombardées pendant le dopage à motif de masque reçoivent une dose suffisante pour totalement inverser l’effet du dopage de protection et obtenir une conductivité qui est l’opposée du dopage de protection. Dans un autre mode de réalisation, le contredopage est effectué au moyen d’une technique de structuration directe, ce qui permet d’éliminer l’étape de lithographie restante. Divers procédés de contredopage direct sont décrits.
PCT/US2009/036235 2008-03-05 2009-03-05 Contredopage de cellules solaires WO2009111666A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801134157A CN102007601A (zh) 2008-03-05 2009-03-05 太阳能电池用的逆掺杂
EP09717975A EP2248185A2 (fr) 2008-03-05 2009-03-05 Contredopage de cellules solaires
JP2010549896A JP2011513998A (ja) 2008-03-05 2009-03-05 太陽電池のためのカウンタドーピング

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US3387308P 2008-03-05 2008-03-05
US61/033,873 2008-03-05
US7427808P 2008-06-20 2008-06-20
US61/074,278 2008-06-20
US9637808P 2008-09-12 2008-09-12
US61/096,378 2008-09-12
US12/397,646 US20090227095A1 (en) 2008-03-05 2009-03-04 Counterdoping for solar cells
US12/397,646 2009-03-04

Publications (2)

Publication Number Publication Date
WO2009111666A2 WO2009111666A2 (fr) 2009-09-11
WO2009111666A3 true WO2009111666A3 (fr) 2009-12-10

Family

ID=41054057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/036235 WO2009111666A2 (fr) 2008-03-05 2009-03-05 Contredopage de cellules solaires

Country Status (7)

Country Link
US (2) US20090227095A1 (fr)
EP (1) EP2248185A2 (fr)
JP (1) JP2011513998A (fr)
KR (1) KR20100136479A (fr)
CN (1) CN102007601A (fr)
TW (1) TW200947727A (fr)
WO (1) WO2009111666A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8461032B2 (en) * 2008-03-05 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Use of dopants with different diffusivities for solar cell manufacture
US20100184250A1 (en) * 2009-01-22 2010-07-22 Julian Blake Self-aligned selective emitter formed by counterdoping
US9006688B2 (en) * 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8900982B2 (en) * 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US8330128B2 (en) * 2009-04-17 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Implant mask with moveable hinged mask segments
EP2293351B1 (fr) 2009-09-07 2017-04-12 Lg Electronics Inc. Cellule solaire
DE202010018510U1 (de) 2009-09-07 2017-03-15 Lg Electronics Inc. Solarzelle
US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
US8465909B2 (en) * 2009-11-04 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Self-aligned masking for solar cell manufacture
KR101027829B1 (ko) * 2010-01-18 2011-04-07 현대중공업 주식회사 후면전극형 태양전지의 제조방법
KR20110089497A (ko) * 2010-02-01 2011-08-09 삼성전자주식회사 기판에의 불순물 도핑 방법, 이를 이용한 태양 전지의 제조 방법 및 이를 이용하여 제조된 태양 전지
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
US8921149B2 (en) * 2010-03-04 2014-12-30 Varian Semiconductor Equipment Associates, Inc. Aligning successive implants with a soft mask
US8110431B2 (en) 2010-06-03 2012-02-07 Suniva, Inc. Ion implanted selective emitter solar cells with in situ surface passivation
US8071418B2 (en) 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
EP2395554A3 (fr) 2010-06-14 2015-03-11 Imec Procédé de fabrication pour cellules photovoltaïques à contact arrière interdigité
DE102010024835A1 (de) * 2010-06-23 2011-12-29 International Solar Energy Research Center Konstanz Method for fabrication of a back side contact solar cell
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
US8586460B2 (en) * 2010-09-23 2013-11-19 Varian Semiconductor Equipment Associates, Inc. Controlling laser annealed junction depth by implant modification
US8492253B2 (en) * 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
KR101172614B1 (ko) 2010-12-08 2012-08-08 현대중공업 주식회사 후면전극형 태양전지 및 그 제조방법
US8450051B2 (en) * 2010-12-20 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Use of patterned UV source for photolithography
US20120167978A1 (en) * 2011-01-03 2012-07-05 Lg Electronics Inc. Solar cell and method for manufacturing the same
KR101195269B1 (ko) * 2011-02-15 2012-11-14 에스케이하이닉스 주식회사 낮은 컨택저항을 갖는 반도체소자의 제조방법
CN102222726B (zh) * 2011-05-13 2013-06-26 晶澳（扬州）太阳能科技有限公司 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺
US8658458B2 (en) * 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US8372737B1 (en) * 2011-06-28 2013-02-12 Varian Semiconductor Equipment Associates, Inc. Use of a shadow mask and a soft mask for aligned implants in solar cells
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
US9190548B2 (en) 2011-10-11 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Method of creating two dimensional doping patterns in solar cells
US20150027522A1 (en) * 2011-11-16 2015-01-29 Trina Solar Energy Development Pte Ltd All-black-contact solar cell and fabrication method
KR102044464B1 (ko) * 2012-01-30 2019-11-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
US9412895B2 (en) 2012-04-04 2016-08-09 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
US8993373B2 (en) * 2012-05-04 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Doping pattern for point contact solar cells
CN102800716B (zh) * 2012-07-09 2015-06-17 友达光电股份有限公司 太阳能电池及其制作方法
US9293623B2 (en) * 2012-10-26 2016-03-22 Varian Semiconductor Equipment Associates, Inc. Techniques for manufacturing devices
US9530923B2 (en) * 2012-12-21 2016-12-27 Sunpower Corporation Ion implantation of dopants for forming spatially located diffusion regions of solar cells
KR102044466B1 (ko) * 2013-01-16 2019-11-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
FR3003687B1 (fr) * 2013-03-20 2015-07-17 Mpo Energy Procede de dopage de plaques de silicium
US10347489B2 (en) * 2013-07-02 2019-07-09 General Electric Company Semiconductor devices and methods of manufacture
TWI626757B (zh) * 2013-07-09 2018-06-11 英穩達科技股份有限公司 背面接觸型太陽能電池
US9852887B2 (en) * 2013-08-23 2017-12-26 Advanced Ion Beam Technology, Inc. Ion source of an ion implanter
KR102132739B1 (ko) * 2013-10-29 2020-07-10 엘지전자 주식회사 태양 전지
CN103618025B (zh) * 2013-11-06 2016-08-17 电子科技大学 一种晶体硅背结太阳能电池制备方法
TWI513024B (zh) * 2013-12-03 2015-12-11 Motech Ind Inc 太陽能電池、其製造方法及其模組
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US20150280043A1 (en) * 2014-03-27 2015-10-01 David D. Smith Solar cell with trench-free emitter regions
US9722105B2 (en) * 2014-03-28 2017-08-01 Sunpower Corporation Conversion of metal seed layer for buffer material
DE102014215893A1 (de) 2014-08-11 2016-02-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen von Dotierbereichen in einer Halbleiterschicht eines Halbleiterbauelementes
DE102014218948A1 (de) 2014-09-19 2016-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit einer amorphen Siliziumschicht und Verfahren zum Herstellen solch einer photovoltaischen Solarzelle
TWI565085B (zh) * 2015-01-08 2017-01-01 茂迪股份有限公司 背接觸太陽能電池的製造方法
US20160284913A1 (en) * 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
EP3093889B8 (fr) * 2015-05-13 2024-05-22 Trina Solar Co., Ltd Cellule solaire et son procede de fabrication
CN106299024A (zh) * 2016-08-26 2017-01-04 泰州中来光电科技有限公司 一种背接触太阳能电池的制备方法及其电池和组件、系统
WO2018109849A1 (fr) * 2016-12-13 2018-06-21 信越化学工業株式会社 Cellule solaire de type à électrode de surface arrière hautement efficace, module de cellules solaires et système de génération d'énergie solaire
CN106711243A (zh) * 2017-01-22 2017-05-24 泰州乐叶光伏科技有限公司 Ibc电池电极结构
KR102397999B1 (ko) * 2017-01-25 2022-05-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101833936B1 (ko) 2017-11-24 2018-03-02 엘지전자 주식회사 태양 전지 및 그 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (ja) * 1985-12-09 1987-06-18 Fujitsu Ltd 相補型高速半導体装置の製造方法
JPH0897398A (ja) * 1994-09-27 1996-04-12 Toshiba Corp 量子効果装置及びその製造方法
JPH1187423A (ja) * 1997-09-09 1999-03-30 Fujitsu Ltd 半導体チップの実装方法
KR20060066280A (ko) * 2004-12-13 2006-06-16 삼성에스디아이 주식회사 태양전지 및 그 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US618111A (en) * 1899-01-24 Harvester
US3471924A (en) * 1967-04-13 1969-10-14 Globe Union Inc Process for manufacturing inexpensive semiconductor devices
JPS531483A (en) * 1976-06-28 1978-01-09 Futaba Denshi Kogyo Kk Pn junction solar battery and method of producing same
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
US5368938A (en) * 1984-09-24 1994-11-29 Air Products And Chemicals, Inc. Oxidation resistant carbon and method for making same
US4608452A (en) * 1984-11-07 1986-08-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Lithium counterdoped silicon solar cell
JP2503733B2 (ja) * 1990-06-22 1996-06-05 三菱電機株式会社 半導体装置の製造方法
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
JP2001189483A (ja) * 1999-10-18 2001-07-10 Sharp Corp バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法
JP3888860B2 (ja) * 2000-05-24 2007-03-07 シャープ株式会社 太陽電池セルの保護方法
JP3790215B2 (ja) * 2002-12-26 2006-06-28 株式会社東芝 半導体装置の製造方法及び半導体製造装置
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
JP2005136214A (ja) * 2003-10-30 2005-05-26 Nec Corp 薄膜デバイス基板の製造方法
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
WO2009029900A1 (fr) * 2007-08-31 2009-03-05 Applied Materials, Inc. Procédés améliorés de formation d'émetteur dans des cellules solaires

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (ja) * 1985-12-09 1987-06-18 Fujitsu Ltd 相補型高速半導体装置の製造方法
JPH0897398A (ja) * 1994-09-27 1996-04-12 Toshiba Corp 量子効果装置及びその製造方法
JPH1187423A (ja) * 1997-09-09 1999-03-30 Fujitsu Ltd 半導体チップの実装方法
KR20060066280A (ko) * 2004-12-13 2006-06-16 삼성에스디아이 주식회사 태양전지 및 그 제조방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8871619B2 (en) 2008-06-11 2014-10-28 Intevac, Inc. Application specific implant system and method for use in solar cell fabrications
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8997688B2 (en) 2009-06-23 2015-04-07 Intevac, Inc. Ion implant system having grid assembly
US9303314B2 (en) 2009-06-23 2016-04-05 Intevac, Inc. Ion implant system having grid assembly
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9583661B2 (en) 2012-12-19 2017-02-28 Intevac, Inc. Grid for plasma ion implant

Also Published As

Publication number Publication date
JP2011513998A (ja) 2011-04-28
CN102007601A (zh) 2011-04-06
KR20100136479A (ko) 2010-12-28
EP2248185A2 (fr) 2010-11-10
TW200947727A (en) 2009-11-16
WO2009111666A2 (fr) 2009-09-11
US20100224240A1 (en) 2010-09-09
US20090227095A1 (en) 2009-09-10

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