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WO2009038120A1 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
WO2009038120A1
WO2009038120A1 PCT/JP2008/066842 JP2008066842W WO2009038120A1 WO 2009038120 A1 WO2009038120 A1 WO 2009038120A1 JP 2008066842 W JP2008066842 W JP 2008066842W WO 2009038120 A1 WO2009038120 A1 WO 2009038120A1
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
independently represent
atom
formula
Prior art date
Application number
PCT/JP2008/066842
Other languages
English (en)
French (fr)
Inventor
Hirokazu Kuwabara
Tatuto Yui
Masaaki Ikeda
Kazuo Takimiya
Original Assignee
Nippon Kayaku Kabushiki Kaisha
Hiroshima University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kayaku Kabushiki Kaisha, Hiroshima University filed Critical Nippon Kayaku Kabushiki Kaisha
Priority to JP2009533172A priority Critical patent/JP5428113B2/ja
Priority to EP08831476A priority patent/EP2207218B1/en
Publication of WO2009038120A1 publication Critical patent/WO2009038120A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D517/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains two hetero rings
    • C07D517/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　特定の有機化合物を半導体材料として用いることにより、実用的なキャリア移動度を有し、閾値電圧が低く、エネルギー消費が少ない電界効果トランジスタを提供する。 　下記式（１）で表される少なくとも１種の化合物を半導体材料として用い、該化合物により半導体層が形成されていることを特徴とする電界効果トランジスタとする。 （式（１）中、Ｘ１及びＸ２はそれぞれ独立に硫黄原子、セレン原子又はテルル原子を、Ｒ１及びＲ２はそれぞれ独立にＣ１－Ｃ１４のアルキル基を表す。但し、Ｘ１及びＸ２のいずれもがセレン原子の場合には、Ｒ１及びＲ２はそれぞれ独立にＣ１－Ｃ４のアルキル基を表す。）
PCT/JP2008/066842 2007-09-21 2008-09-18 電界効果トランジスタ WO2009038120A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009533172A JP5428113B2 (ja) 2007-09-21 2008-09-18 電界効果トランジスタ
EP08831476A EP2207218B1 (en) 2007-09-21 2008-09-18 Field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-245460 2007-09-21
JP2007245460 2007-09-21

Publications (1)

Publication Number Publication Date
WO2009038120A1 true WO2009038120A1 (ja) 2009-03-26

Family

ID=40467930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066842 WO2009038120A1 (ja) 2007-09-21 2008-09-18 電界効果トランジスタ

Country Status (3)

Country Link
EP (1) EP2207218B1 (ja)
JP (1) JP5428113B2 (ja)
WO (1) WO2009038120A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762545A (zh) * 2010-02-15 2012-10-31 默克专利股份有限公司 半导体聚合物
JPWO2012118174A1 (ja) * 2011-03-02 2014-07-07 国立大学法人九州大学 有機電界効果トランジスタ及び有機半導体材料
JP2015053497A (ja) * 2011-03-10 2015-03-19 国立大学法人東京工業大学 有機半導体材料
KR20200024609A (ko) * 2018-08-28 2020-03-09 삼성전자주식회사 화합물, 박막 트랜지스터 및 전자 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177380A (ja) 1992-07-30 1994-06-24 Nec Corp 電界効果型トランジスタおよびその製造方法
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2005154371A (ja) 2003-11-27 2005-06-16 Japan Science & Technology Agency 新規なベンゾジカルコゲノフェン誘導体、その製造方法およびそれを用いた有機半導体デバイス
JP2005330185A (ja) 2004-05-18 2005-12-02 Takasago Internatl Corp ジチア−ｓ−インダセン誘導体
EP2147923A1 (en) 2007-05-24 2010-01-27 Nippon Kayaku Kabushiki Kaisha Method for producing aromatic compound

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340786A (ja) * 1997-06-09 1998-12-22 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子材料およびそれを使用した有機エレクトロルミネッセンス素子
EP1357163B1 (en) * 2002-04-24 2006-05-31 MERCK PATENT GmbH Reactive mesogenic benzodithiophenes
JP5308164B2 (ja) * 2006-12-04 2013-10-09 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177380A (ja) 1992-07-30 1994-06-24 Nec Corp 電界効果型トランジスタおよびその製造方法
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2005154371A (ja) 2003-11-27 2005-06-16 Japan Science & Technology Agency 新規なベンゾジカルコゲノフェン誘導体、その製造方法およびそれを用いた有機半導体デバイス
JP2005330185A (ja) 2004-05-18 2005-12-02 Takasago Internatl Corp ジチア−ｓ−インダセン誘導体
EP2147923A1 (en) 2007-05-24 2010-01-27 Nippon Kayaku Kabushiki Kaisha Method for producing aromatic compound

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEM. LETTERS, vol. 35, no. 10, 2006, pages 1200 - 1201
J. AM. CHEM. SOC., vol. 126, 2004, pages 5084 - 5085
KAZUO TAKIMIYA ET AL.: "Molecular Modification of 2,6-Diphenylbenzo[1,2-b:4,5-b'] dichalcogenophenes by Introduction of Strong Electron-withdrawing Groups: Conversion from p- to n-Channel OFET Materials", CHEMISTRY LETTERS, vol. 35, no. 10, 5 October 2006 (2006-10-05), pages 1200 - 1201, XP009142643 *
See also references of EP2207218A4

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762545A (zh) * 2010-02-15 2012-10-31 默克专利股份有限公司 半导体聚合物
US9365585B2 (en) 2010-02-15 2016-06-14 Merck Patent Gmbh Semiconducting polymers
KR101768248B1 (ko) 2010-02-15 2017-08-30 메르크 파텐트 게엠베하 반전도성 중합체
US10155774B2 (en) 2010-02-15 2018-12-18 Merck Patent Gesellschaft Mit Beschrankter Haftung Semiconducting polymers
JPWO2012118174A1 (ja) * 2011-03-02 2014-07-07 国立大学法人九州大学 有機電界効果トランジスタ及び有機半導体材料
JP5840197B2 (ja) * 2011-03-02 2016-01-06 日本化薬株式会社 有機電界効果トランジスタ及び有機半導体材料
JP2015053497A (ja) * 2011-03-10 2015-03-19 国立大学法人東京工業大学 有機半導体材料
US10056557B2 (en) 2011-03-10 2018-08-21 Tokyo Institute Of Technology Organic semiconductor material
US10937964B2 (en) 2011-03-10 2021-03-02 Tokyo Institute Of Technology Organic semiconductor material
KR20200024609A (ko) * 2018-08-28 2020-03-09 삼성전자주식회사 화합물, 박막 트랜지스터 및 전자 소자
KR102631401B1 (ko) * 2018-08-28 2024-01-29 삼성전자주식회사 화합물, 박막 트랜지스터 및 전자 소자

Also Published As

Publication number Publication date
JP5428113B2 (ja) 2014-02-26
EP2207218B1 (en) 2012-08-15
JPWO2009038120A1 (ja) 2011-01-06
EP2207218A4 (en) 2011-01-26
EP2207218A1 (en) 2010-07-14

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