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WO2009034998A1 - 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 - Google Patents

窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 Download PDF

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Publication number
WO2009034998A1
WO2009034998A1 PCT/JP2008/066331 JP2008066331W WO2009034998A1 WO 2009034998 A1 WO2009034998 A1 WO 2009034998A1 JP 2008066331 W JP2008066331 W JP 2008066331W WO 2009034998 A1 WO2009034998 A1 WO 2009034998A1
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WO
WIPO (PCT)
Prior art keywords
formula
underlayer film
resist underlayer
nitrogenous
composition containing
Prior art date
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PCT/JP2008/066331
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English (en)
French (fr)
Inventor
Makoto Nakajima
Wataru Shibayama
Yuta Kanno
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to JP2009532198A priority Critical patent/JP5152532B2/ja
Priority to US12/676,687 priority patent/US8426112B2/en
Priority to CN2008801065699A priority patent/CN101802712B/zh
Priority to EP08831233.5A priority patent/EP2196854B1/en
Publication of WO2009034998A1 publication Critical patent/WO2009034998A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

【課題】 　フォトレジストとのインタ－ミキシングを起こさず、フォトレジストに比較して大きなドライエッチング速度を有するリソグラフィ－用レジスト下層膜及び該下層膜を形成するためのレジスト下層膜形成組成物を提供する。 【解決手段】 【請求項１】　下記式（１） （式中、Ｘ1は、式（２）、式（３）、式（４）又は式（４－１）で表わされる基を表わす。）で表わされる部分構造を含むポリマー及び溶剤を含むリソグラフィー用レジスト下層膜形成組成物である。該ポリマーは、式（１）で表わされる部分構造に加えて、更に、式（５） （Ｒ1）a（Ｒ3）bＳｉ（Ｏ－）4-(a+b)          式（５） で表わされる部分構造、及び／又は式（６） 〔（Ｒ4）cＳｉ（Ｏ－）3-c〕2Ｙ        式（６） で表わされる部分構造を含み得る。
PCT/JP2008/066331 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 WO2009034998A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009532198A JP5152532B2 (ja) 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
US12/676,687 US8426112B2 (en) 2007-09-11 2008-09-10 Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group
CN2008801065699A CN101802712B (zh) 2007-09-11 2008-09-10 含有具有带氮的甲硅烷基的聚合物的、抗蚀剂下层膜形成用组合物
EP08831233.5A EP2196854B1 (en) 2007-09-11 2008-09-10 Composition containing polymer having nitrogenous silyl group for forming resist underlayer film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-235852 2007-09-11
JP2007235852 2007-09-11

Publications (1)

Publication Number Publication Date
WO2009034998A1 true WO2009034998A1 (ja) 2009-03-19

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PCT/JP2008/066331 WO2009034998A1 (ja) 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物

Country Status (7)

Country Link
US (1) US8426112B2 (ja)
EP (1) EP2196854B1 (ja)
JP (1) JP5152532B2 (ja)
KR (1) KR101570138B1 (ja)
CN (1) CN101802712B (ja)
TW (1) TWI450041B (ja)
WO (1) WO2009034998A1 (ja)

Cited By (15)

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WO2011102470A1 (ja) 2010-02-19 2011-08-25 日産化学工業株式会社 窒素含有環を有するシリコン含有レジスト下層膜形成組成物
WO2013005633A1 (ja) * 2011-07-04 2013-01-10 Jnc株式会社 イソシアヌル骨格、エポキシ基およびＳｉＨ基を有するオルガノポリシロキサンまたはシルセスキオキサン骨格を含む化合物および該化合物を密着付与材として含む熱硬化性樹脂組成物、硬化物、および光半導体用封止材
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US8815494B2 (en) 2008-12-19 2014-08-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
US8828879B2 (en) 2009-09-16 2014-09-09 Nissan Chemical Industries, Ltd. Silicon-containing composition having sulfonamide group for forming resist underlayer film
US8864894B2 (en) 2008-08-18 2014-10-21 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having onium group
JP5618095B2 (ja) * 2009-06-02 2014-11-05 日産化学工業株式会社 スルフィド結合を有するシリコン含有レジスト下層膜形成組成物
KR20140144207A (ko) * 2012-03-27 2014-12-18 닛산 가가쿠 고교 가부시키 가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20150063416A (ko) 2012-09-24 2015-06-09 닛산 가가쿠 고교 가부시키 가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
JPWO2015041341A1 (ja) * 2013-09-20 2017-03-02 リンテック株式会社 硬化性組成物、硬化物および硬化性組成物の使用方法
JP2017120359A (ja) * 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法
WO2018097103A1 (ja) * 2016-11-24 2018-05-31 旭硝子株式会社 ポリシロキサンゲル、その製造方法、断熱材および合わせガラス
KR20210060220A (ko) * 2019-11-18 2021-05-26 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US11392037B2 (en) 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
JP7651823B2 (ja) 2019-03-28 2025-03-27 日産化学株式会社 アルコキシケイ素化合物の精製方法

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KR102653125B1 (ko) 2016-01-13 2024-04-01 삼성전자주식회사 포토레지스트의 하부막 조성물 및 이를 이용한 패턴 형성 방법
JP2024500925A (ja) * 2020-12-23 2024-01-10 ブルーワー サイエンス アイ エヌ シー． リソグラフィー用の化学的に均一なシリコンハードマスク

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Cited By (31)

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Publication number Priority date Publication date Assignee Title
US11392037B2 (en) 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
US8864894B2 (en) 2008-08-18 2014-10-21 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having onium group
US8835093B2 (en) 2008-12-19 2014-09-16 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
US8815494B2 (en) 2008-12-19 2014-08-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
US9217921B2 (en) 2009-06-02 2015-12-22 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having sulfide bond
JP5618095B2 (ja) * 2009-06-02 2014-11-05 日産化学工業株式会社 スルフィド結合を有するシリコン含有レジスト下層膜形成組成物
US8828879B2 (en) 2009-09-16 2014-09-09 Nissan Chemical Industries, Ltd. Silicon-containing composition having sulfonamide group for forming resist underlayer film
US9023588B2 (en) 2010-02-19 2015-05-05 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having nitrogen-containing ring
WO2011102470A1 (ja) 2010-02-19 2011-08-25 日産化学工業株式会社 窒素含有環を有するシリコン含有レジスト下層膜形成組成物
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KR101947105B1 (ko) * 2010-02-19 2019-02-13 닛산 가가쿠 가부시키가이샤 질소 함유환을 가지는 실리콘 함유 레지스트 하층막 형성 조성물
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WO2013005633A1 (ja) * 2011-07-04 2013-01-10 Jnc株式会社 イソシアヌル骨格、エポキシ基およびＳｉＨ基を有するオルガノポリシロキサンまたはシルセスキオキサン骨格を含む化合物および該化合物を密着付与材として含む熱硬化性樹脂組成物、硬化物、および光半導体用封止材
JPWO2013005633A1 (ja) * 2011-07-04 2015-02-23 Jnc株式会社 イソシアヌル骨格、エポキシ基およびＳｉＨ基を有するオルガノポリシロキサンまたはシルセスキオキサン骨格を含む化合物および該化合物を密着付与材として含む熱硬化性樹脂組成物、硬化物、および光半導体用封止材
KR102072490B1 (ko) 2012-03-27 2020-02-03 닛산 가가쿠 가부시키가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20140144207A (ko) * 2012-03-27 2014-12-18 닛산 가가쿠 고교 가부시키 가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
US9627217B2 (en) 2012-04-23 2017-04-18 Nissan Chemical Industries, Ltd. Silicon-containing EUV resist underlayer film-forming composition including additive
JPWO2013161372A1 (ja) * 2012-04-23 2015-12-24 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US10079146B2 (en) 2012-09-24 2018-09-18 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom
KR20150063416A (ko) 2012-09-24 2015-06-09 닛산 가가쿠 고교 가부시키 가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
JPWO2015041341A1 (ja) * 2013-09-20 2017-03-02 リンテック株式会社 硬化性組成物、硬化物および硬化性組成物の使用方法
JP2017120359A (ja) * 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法
WO2018097103A1 (ja) * 2016-11-24 2018-05-31 旭硝子株式会社 ポリシロキサンゲル、その製造方法、断熱材および合わせガラス
JP7651823B2 (ja) 2019-03-28 2025-03-27 日産化学株式会社 アルコキシケイ素化合物の精製方法
KR20210060220A (ko) * 2019-11-18 2021-05-26 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102407824B1 (ko) 2019-11-18 2022-06-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

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CN101802712A (zh) 2010-08-11
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CN101802712B (zh) 2013-03-20
TW200931181A (en) 2009-07-16
TWI450041B (zh) 2014-08-21
EP2196854B1 (en) 2013-11-06
US8426112B2 (en) 2013-04-23
US20100304305A1 (en) 2010-12-02
EP2196854A4 (en) 2010-11-24
JP5152532B2 (ja) 2013-02-27
KR101570138B1 (ko) 2015-11-18

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